CN104766924A - Annealing process of magnetic material - Google Patents

Annealing process of magnetic material Download PDF

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Publication number
CN104766924A
CN104766924A CN201410008835.1A CN201410008835A CN104766924A CN 104766924 A CN104766924 A CN 104766924A CN 201410008835 A CN201410008835 A CN 201410008835A CN 104766924 A CN104766924 A CN 104766924A
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China
Prior art keywords
annealing
magnetic material
magnetic
annealing process
easy axis
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CN201410008835.1A
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Chinese (zh)
Inventor
张挺
杨鹤俊
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SHANGHAI XIRUI TECHNOLOGY Co Ltd
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SHANGHAI XIRUI TECHNOLOGY Co Ltd
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Priority to CN201410008835.1A priority Critical patent/CN104766924A/en
Publication of CN104766924A publication Critical patent/CN104766924A/en
Pending legal-status Critical Current

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Abstract

The invention reveals an annealing process of a magnetic material. The annealing process comprises the steps that S1) the magnetic material of certain magnetization direction is deposited on a substrate, namely an easy axis of a film material is arranged in certain direction; S2) annealing is carried out, an external magnetic field is applied in the annealing process, the direction of the magnetic field is not parallel with the direction of the easy axis of a magnetic film on the substrate during annealing, and thus, a set included angle theta is formed; and S3) the easy axis of the magnetic film material is deflected due to annealing, and the included angle between the newly formed direction of the easy axis after annealing and the direction of the original easy axis is theta/2. According to the annealing process of the magnetic material, annealing can be used to change the direction of the easy axis of the magnetic material, and thus, the direction of the easy axis of the magnetic material can be adjusted conveniently according to requirements.

Description

A kind of magnetic material annealing process
Technical field
The invention belongs to semiconductor process techniques field, relate to a kind of magnetic material preparation technology, particularly relate to a kind of magnetic material annealing process.
Background technology
Magnetic material often needs the magnetic field applying to be parallel to substrate surface in substrate when deposition of material, make magnetic material in the process of thin film deposition, just carry out magnetization arrangement towards specific direction, make the easy axle of magnetic material identical with the direction in added magnetic field, as shown in Figure 1.The easy axle of magnetic material film and hard axis have larger difference in performance particularly magnetic property, and therefore, the direction of magnetization correspondence design device of material has important effect.
And after deposition of material, often need annealing, to improve the crystal structure of magnetic material, and promote the magnetic property of magnetic material, as dR/R value.And the difference of magnetic anneal of material and traditional films also with: the annealing process of employing often also needs to apply external magnetic field, applies the direction in magnetic field identical with the easy axle of magnetic material in substrate, reaches the object promoting magnetic material magnetic energy.
In existing magnetic anneal of material, the direction in the magnetic field of applying must be identical with the direction of the easy axle of magnetic material in substrate, after anneal, and the direction of magnetization not change before and after annealing of magnetic material.
In view of this, nowadays in the urgent need to designing a kind of new magnetic anneal of material mode, to overcome the above-mentioned defect of existing annealing way.
Summary of the invention
Technical problem to be solved by this invention is: provide a kind of magnetic material annealing process, can change the easy axis direction of magnetic material by annealing.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of magnetic material annealing process, described annealing process comprises:
Step S1, in substrate, deposit the magnetic material film of the specific direction of magnetization, the easy axle of magnetic material film is towards specific direction;
Step S2, to anneal subsequently, in annealing process, apply external magnetic field; The magnetic direction adopted during annealing and the easy axis direction of substrate not parallel, its angle is set as θ;
After step S3, annealing, the easy axle of magnetic material film deflects, and the new easy axis direction of formation and the angle of former easy axis direction are θ/2.
As a preferred embodiment of the present invention, in described step S3, annealing process applies magnetic field, when sufficient annealing temperature, annealing time and magnetic field intensity, in substrate, the easy axis direction of magnetic material film can rotate, and the new easy axis direction formed is positioned at the centre of original easy axis direction and annealing magnetic direction.
As a preferred embodiment of the present invention, in described step S3, the new easy axis direction formed is positioned at original easy axis direction and magnetic direction is formed on the angular bisector of angle.
As a preferred embodiment of the present invention, in described step S2, the external magnetic field of employing is perpendicular to original easy axle;
In described step S3, after annealing, in substrate, the easy shaft angle degree of magnetic material film can rotate to the centre of magnetic field and easy shaft angle degree.
As a preferred embodiment of the present invention, in described step S2, annealing atmosphere is vacuum, or protective gas; Protective gas is one or more in inert gas, nitrogen, hydrogen.
As a preferred embodiment of the present invention, described magnetic material film is AMR material, or is GMR material, or is TMR material.
As a preferred embodiment of the present invention, in described step S2, annealing temperature is between 200 to 450 degrees Celsius.
As a preferred embodiment of the present invention, in described step S2, the magnetic field intensity of applying is between 100G to 10T.
Beneficial effect of the present invention is: the magnetic material annealing process that the present invention proposes, and can change the easy axis direction of magnetic material, be convenient to the easy axis direction adjusting integral magnetic material as required by annealing.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the magnetic material with easy axle.
Fig. 2 is the schematic diagram applying magnetic field and easy axis direction in embodiment one.
Fig. 3 is the schematic diagram applying magnetic field and easy axis direction in embodiment two.
Embodiment
The preferred embodiments of the present invention are described in detail below in conjunction with accompanying drawing.
Embodiment one
Refer to Fig. 2, Fig. 2 is the magnetic material film that substrate deposited the specific direction of magnetization, and the easy axle of film arranges towards specific direction.Anneal subsequently, in annealing process, apply external magnetic field.External magnetic field as adopted is parallel to substrate, but perpendicular to the original easy axle of magnetic thin film in substrate, after annealing, the easy shaft angle degree of substrate upper film material can rotate to the centre of magnetic field and easy shaft angle degree (might not be the angular bisector just in time rotating to magnetic direction and former easy shaft angle degree).
Particularly, refer to Fig. 2, present invention is disclosed a kind of magnetic material annealing process, described annealing process comprises:
[step S1] deposits the magnetic material film of the specific direction of magnetization in substrate, and this film has the easy axle of specific direction.Magnetic thin film material can be AMR material, or is GMR material, or is TMR material.
[step S2] anneals subsequently, applies external magnetic field in annealing process; The magnetic direction adopted during annealing and the easy axis direction of substrate not parallel, formed setting angle be θ.The atmosphere of annealing can be one or more the mixture (also can be vacuum) in inert gas, nitrogen, hydrogen; The temperature of annealing is 200-450 degree Celsius; The magnetic field applied is 100G-10T.
[step S3] annealing process applies magnetic field, when sufficient annealing temperature, annealing time and magnetic field intensity, after annealing, in substrate, the easy axis direction of magnetic material can rotate, and the new easy axis direction formed is positioned at the centre of original easy axis direction and magnetic direction.Particularly, the angle that the external magnetic field that the new easy axis direction formed and annealing apply is formed is the half of former angle theta.That is, the easy axis direction newly formed is positioned at original easy axis direction and magnetic direction is formed on the angular bisector of angle.
In the present embodiment, the external magnetic field of employing is perpendicular to original easy axle, and namely angle is 90 degree; After annealing, the easy shaft angle degree of substrate upper film material can rotate to the centre of magnetic field and easy shaft angle degree, and such as new easy shaft angle degree and the angle of magnetic direction and former easy axis direction are 45 degree.
Embodiment two
The difference of the present embodiment and embodiment one is, in the present embodiment, external magnetic field is not orthogonal to original easy axle.
Fig. 3 is the magnetic material that substrate deposited specific direction, has easy axle.Anneal subsequently, in annealing process, apply external magnetic field.External magnetic field direction as adopted acutangulates with original easy axis direction (can certainly become obtuse angle), and after annealing, the easy shaft angle degree of substrate upper film material can rotate to the centre of magnetic field and easy shaft angle degree.
In sum, the magnetic material annealing process that the present invention proposes, can change the easy axis direction of magnetic material, be convenient to the easy axis direction adjusting integral magnetic material as required by annealing.
Here description of the invention and application is illustrative, not wants by scope restriction of the present invention in the above-described embodiments.Distortion and the change of embodiment disclosed are here possible, are known for the replacement of embodiment those those of ordinary skill in the art and the various parts of equivalence.Those skilled in the art are noted that when not departing from spirit of the present invention or substantive characteristics, the present invention can in other forms, structure, layout, ratio, and to realize with other assembly, material and parts.When not departing from the scope of the invention and spirit, can other distortion be carried out here to disclosed embodiment and change.

Claims (8)

1. a magnetic material annealing process, is characterized in that, described annealing process comprises:
Step S1, in substrate, deposit the magnetic material film of the specific direction of magnetization, the easy axle of magnetic material film is towards specific direction;
Step S2, to anneal subsequently, in annealing process, apply external magnetic field; The magnetic direction adopted during annealing and the easy axis direction of substrate not parallel, its angle is set as θ;
After step S3, annealing, the easy axle of magnetic material film deflects, and the new easy axis direction of formation and the angle of former easy axis direction are θ/2.
2. magnetic material annealing process according to claim 1, is characterized in that:
In described step S3, annealing process applies magnetic field, when sufficient annealing temperature, annealing time and magnetic field intensity, in substrate, the easy axis direction of magnetic material film can rotate, and the new easy axis direction formed is positioned at the centre of original easy axis direction and annealing magnetic direction.
3. magnetic material annealing process according to claim 1, is characterized in that:
In described step S3, the new easy axis direction formed is positioned at original easy axis direction and magnetic direction is formed on the angular bisector of angle.
4. magnetic material annealing process according to claim 1, is characterized in that:
In described step S2, the external magnetic field of employing is perpendicular to original easy axle;
In described step S3, after annealing, in substrate, the easy shaft angle degree of magnetic material film can rotate to the centre of magnetic field and easy shaft angle degree.
5. magnetic material annealing process according to claim 1, is characterized in that:
In described step S2, annealing atmosphere is vacuum, or protective gas; Protective gas is one or more in inert gas, nitrogen, hydrogen.
6. magnetic material annealing process according to claim 1, is characterized in that:
Described magnetic material film is AMR material, or is GMR material, or is TMR material.
7. magnetic material annealing process according to claim 1, is characterized in that:
In described step S2, annealing temperature is set between 200 to 450 degrees Celsius.
8. magnetic material annealing process according to claim 1, is characterized in that:
In described step S2, the magnetic field intensity of applying is set between 100G to 10T.
CN201410008835.1A 2014-01-08 2014-01-08 Annealing process of magnetic material Pending CN104766924A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109628707A (en) * 2018-10-08 2019-04-16 柳州凯通新材料科技有限公司 A kind of annealing method of high-speed motor core material

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1118917A (en) * 1994-03-10 1996-03-20 国际商业机器公司 Edgebiased magnetoresistive sensor
US6541131B1 (en) * 2000-05-25 2003-04-01 Seagate Technology Llc Perpendicular recording media with enhanced coercivity
CN1412863A (en) * 2001-10-04 2003-04-23 惠普公司 Method for modifying magnetic tunnel junction conversion characteristics
US20030179512A1 (en) * 2002-03-19 2003-09-25 Headway Technologies, Inc. Biased spin valve head with canted adjacent layer and current channeling layer
CN101064114A (en) * 2006-04-28 2007-10-31 株式会社东芝 Magnetoresistive effect element and magnetic memory
CN102496449A (en) * 2011-12-06 2012-06-13 电子科技大学 Method for modulating ferromagnetic/antiferromagnetic double-layer-film pinning field direction
CN102809732A (en) * 2011-05-30 2012-12-05 株式会社电装 Magnetic sensor and manufacturing method of the same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1118917A (en) * 1994-03-10 1996-03-20 国际商业机器公司 Edgebiased magnetoresistive sensor
US6541131B1 (en) * 2000-05-25 2003-04-01 Seagate Technology Llc Perpendicular recording media with enhanced coercivity
CN1412863A (en) * 2001-10-04 2003-04-23 惠普公司 Method for modifying magnetic tunnel junction conversion characteristics
US20030179512A1 (en) * 2002-03-19 2003-09-25 Headway Technologies, Inc. Biased spin valve head with canted adjacent layer and current channeling layer
CN101064114A (en) * 2006-04-28 2007-10-31 株式会社东芝 Magnetoresistive effect element and magnetic memory
CN102809732A (en) * 2011-05-30 2012-12-05 株式会社电装 Magnetic sensor and manufacturing method of the same
CN102496449A (en) * 2011-12-06 2012-06-13 电子科技大学 Method for modulating ferromagnetic/antiferromagnetic double-layer-film pinning field direction

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
R.D.HEMPSTEAD ET AL.: "Unidirectional Anisotropy in Nickel-Iron Films by Exchange Coupling With Antiferromagnetic Films", 《IEEE TRANSACTIONS ON MAGNETIC》 *
李建平 等: "用退火法重置自旋阀材料钉扎方向的研究", 《材料保护》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109628707A (en) * 2018-10-08 2019-04-16 柳州凯通新材料科技有限公司 A kind of annealing method of high-speed motor core material

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Application publication date: 20150708