CN110828652B - Molybdenum disulfide/graphene heterojunction device - Google Patents
Molybdenum disulfide/graphene heterojunction device Download PDFInfo
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- CN110828652B CN110828652B CN201910995467.7A CN201910995467A CN110828652B CN 110828652 B CN110828652 B CN 110828652B CN 201910995467 A CN201910995467 A CN 201910995467A CN 110828652 B CN110828652 B CN 110828652B
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Abstract
The invention discloses a molybdenum disulfide/graphene heterojunction device which comprises a molybdenum disulfide material layer and a graphene material layer, wherein the rotation angle between the molybdenum disulfide and the graphene layer is 7-15 degrees. The molybdenum disulfide/graphene heterojunction device provided by the invention controls MoS2The rotation angle between the material layer and the graphene material layer can regulate and control the energy band structure of a heterojunction system so as to induce the superconducting characteristic.
Description
Technical Field
The invention relates to heterojunction construction of a two-dimensional layered material, in particular to a molybdenum disulfide/graphene heterojunction device.
Background
With the development of economic society, the semiconductor industry is gradually improved, and with the development of miniaturization and multifunctionalization of chips, new requirements are put forward on the photoelectric performance of semiconductors. At present, the size of silicon-based CMOS transistors has been reduced to sub-10 nm, and challenges such as fundamental physical principles, high power consumption, high cost investment and the like are faced, it is clearly pointed out by international semiconductor circuit diagram (ITRS 2.0) in 2015 that information technology enters the post-mole era (More than one), and a new device technology of More than one, which is mainly characterized by new materials, new structures and new principles, starts to be widely concerned and becomes a significant front edge of micro-nano electronic science.
The heterojunction is a basic core structure of a semiconductor device, and can be used for regulating an energy band structure through heterojunction construction so as to enable the heterojunction to obtain novel characteristics which a single material does not have, such as two-dimensional electron gas equivalent effect of a superlattice structure, and a new principle device can be developed by utilizing the novel characteristics. For conventional semiconductors such as gallium arsenide, gallium nitride, etc., the formation of heterojunctions requires lattice structure matching of the semiconductor materials.
The two-dimensional layered (Van der Waals) material is a novel material which is combined by strong covalent bonds or ionic bonds in layers and is combined by Van der Waals forces among layers, and has peculiar optical, electric and magnetic properties and functions because of unique two-dimensional structures including the absence of dangling bonds on the surfaces, the weakening of electrostatic shielding in the Z dimension direction, the thickness of single-layer atoms and the like. The two-dimensional layered materials with different layers can be stacked into two-dimensional materials with different layers or thicknesses. By controlling the interlayer twist angle, the electronic structure of the van der waals heterojunction can be regulated. For two-dimensional layered crystal materials with highly ordered structures formed by weak van der waals force between layers, the energy band structure or electronic performance depends on structural symmetry, and the electronic state can be adjusted only by small coulomb force interaction, such as the rotation angle between layers (such as graphene and graphene) is changed (the electronic energy band structure in the graphene layer is not aligned any more due to dislocation generated by rotation); can be tuned by coupling lattice mismatched single layer crystals (different two-dimensional layered materials) [ Science 363,1059 (2019); nature Physics 15,237 (2019); nature 567,66 (2019); nature 567,76 (2019);
nature 567,81(2019), this mismatch of the interlayer lattice enables to regulate the two-dimensional periodic potential of the two-dimensional heterojunction system. Therefore, by regulating and controlling the mutual stacking or the interlayer rotation angle (twist angle) between the two-dimensional layered material layers, the energy band structure of a heterojunction system can be regulated to obtain singular physical effects such as exciton luminescence, superconductivity and the like, and novel optical, electric and magnetic devices can be prepared by utilizing the singular physical effects. However, the occurrence of singular physical effects requires controlling the relative packing or rotational twist angle (twist angle) between layers.
Therefore, how to prepare novel optical, electric and magnetic devices by utilizing the singular physical effects to obtain the novel optical, electric and magnetic devices is a current research hotspot.
Disclosure of Invention
The invention aims to provide a molybdenum disulfide/graphene heterojunction (MoS)2Graphene) device by controlling MoS2The rotation angle between the material layer and the graphene material layer can regulate and control the energy band structure of a heterojunction system so as to induce the superconducting characteristic.
A molybdenum disulfide/graphene heterojunction device comprises a molybdenum disulfide material layer and a graphene material layer, wherein the rotation angle between the molybdenum disulfide material layer and the graphene material layer is 7-15 degrees.
In the present invention, the layer of molybdenum dioxide material is also referred to as MoS2The layer, graphite alkene material layer are called graphite alkene layer or graphene layer again, and molybdenum disulfide material layer and graphite alkene material layer constitute molybdenum disulfide/graphite alkene heterojunction, and molybdenum disulfide/graphite alkene heterojunction device is called MoS again2A/graphene heterojunction device.
The principle of the invention is as follows: two-dimensional layered material heterojunction device has different construction and piles up the mode, and different piles up can produce different electrical properties, specifically do: due to MoS2Different interlayer stacking modes (rotational alignment) of the material layer and the graphene material layer cause different interlayer interactions to influence the energy band structure or the moire periodic potential of a heterojunction system. At a certain rotation angle or twisting angle, the twisted heterojunction can form a narrow electronic energy band (or flat band, namely flat bands appear near the Fermi level), the electronic interaction effect is enhanced, a non-conductive Mott insulating state is generated, and a small amount of charge carriers are added in the Mott insulating state, so that the Mott insulating state can be converted into a superconducting state. Typically, high temperature superconductivity originates from the doped Mott insulating state.
Preferably, the number of the molybdenum disulfide material layers is 1-5, and the number of the graphene material layers is 1-4.
Preferably, the number of the molybdenum disulfide layers is 1-2, and the number of the graphene material layers is 1-2.
Preferably, the rotation angle between the molybdenum disulfide and the graphene layer is between 8 and 10 degrees.
The molybdenum disulfide/graphene heterojunction device includes an insulating layer.
In the invention, the molybdenum disulfide/graphene heterojunction device is prepared by a mechanical transfer method and a conventional micro-nano processing technology.
The present invention achieves superconducting properties by controlling the relative packing or rotational twist angle (twist angle) between layers. Superconductor (phenomenon) refers to a material (phenomenon) having a resistance of zero or actually lower than 10-25 Ω at a certain temperature; the superconductor has wide application prospect in the power industry, the communication field, the military field, the medical field and the like.
The molybdenum disulfide and graphene materials of the molybdenum disulfide/graphene heterojunction device provided by the invention are two-dimensional layered materials, and are two-dimensional materials in strict physical sense (chem.rev.113, 3766-3798 (2013)), for example, a single-layer graphene (graphene) is formed by sp (sp) of a current layer2The hybridized honeycomb-shaped single carbon atom layer is characterized in that the double-layer graphene is composed of two layers of graphene, and the three layers of graphene are formed by stacking three layers of graphene. Two-dimensional molybdenum disulfide (MoS)2) The material is a layered material composed of Mo and S atoms.
Compared with the prior art, the molybdenum disulfide/graphene heterojunction (MoS) provided by the invention2Graphene) device by controlling MoS2The rotation angle between the graphene material layer and the graphene material layer can regulate and control the energy band structure of a heterojunction system to induce the superconducting characteristic, and the possibility is provided for realizing the superconducting and the application thereof.
Drawings
Fig. 1 is a schematic structural view of two-dimensional (a) graphene, (b) molybdenum disulfide, and (c) graphene/molybdenum disulfide stacks of the present invention;
FIG. 2 is a MoS of the present invention2A graphene heterojunction structure schematic diagram;
MoS in which 1 is the upper layer2Layer 2 is graphene layer, 3 is h-BN (hexagonal boron nitride) layer of lower layer, thetatAnd thetabRespectively corresponding to the upper MoS2Rotation angle between layers and graphene layer and rotation angle between lower layer h-BN and graphene layer, MoS2The rotation angle between layers of the graphene heterojunction refers to thetath-BN layer as MoS2An insulating layer of a graphene heterojunction;
FIG. 3 shows the MoS obtained in example 12Energy band structure diagram of a/graphene heterojunction structure system;
FIG. 4 shows the MoS obtained in example 22Energy band structure diagram of a/graphene heterojunction structure system;
FIG. 5 shows MoS obtained in comparative example 12Energy band structure diagram of a/graphene heterojunction structure system;
fig. 6 is a method of making a molybdenum disulfide/graphene heterojunction structure (device) in an example.
Detailed Description
The invention is further described with reference to the following drawings and specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
In FIG. 1, (a), (b), and (c) are single-layer graphene and single-layer MoS, respectively2And single layer graphene with single layer MoS2The structure of the mound is schematically shown, and FIG. 2 is a MoS2a/graphene/h-BN heterojunction structure schematic diagram, and MoS is not distinguished in the invention when the heterojunction is prepared2Which layer is above and which is below the/graphene heterojunction, i.e. MoS2(ii)/graphene or graphene/MoS2。
Graphene materials and MoS required for the invention2The materials as well as the h-BN materials are prepared by methods conventional in the art such as mechanical exfoliation and chemical vapor deposition.
Due to the limitation of the current preparation technology, the MoS is prepared by adopting a method of transferring a two-dimensional material layer by adopting a mechanical transfer method under an optical microscope2A/graphene heterojunction structure. Comprises the following preparation steps (as shown in figure 6):
(1) transfer of h-BN layers (about 15-30 layers) to Si/SiO2Substrate of Si/SiO2a/h-BN structure;
(2) transfer of graphene layers (1-4 layers) to Si/SiO2on/h-BN, Si/SiO is formed2The structure of/h-BN/graphene layer;
(3) in Si/SiO2Structural transfer of MoS of/h-BN/graphene layer2Layer, at this time by optical microscope observation, according to graphene and MoS2The symmetry of the crystal structure controls the graphene layer and the MoS2The rotation angle between the layers is at a specific angle (refer to examples 1-2 and comparative example 1), forming Si/SiO2h-BN/graphene/MoS2So that graphene/MoS can be controlled2Electrical properties of the heterojunction structure.
(4) In order to protect the heterojunction, after step 3, h-BN layers (about 15 to 30 layers) are applied) Transfer to Si/SiO2h-BN/graphene/MoS2On the structure of (1), forming Si/SiO2h-BN/graphene/MoS2Structure of/h-BN.
After the heterojunction structure is prepared, the electrodes for heterojunction characteristic study can be prepared by adopting the conventional micro-nano processing technology such as photoetching, electron beam etching and the like, and fig. 6 is only one structure of electrode layout.
Although the heterojunction made of two-dimensional material is prepared by mechanical transfer method in this embodiment, with the development of two-dimensional material preparation technology, it is possible to prepare high-quality other two-dimensional material on the two-dimensional material layer directly by chemical vapor deposition or the like to form heterojunction in the future. Two-dimensional material (graphene, MoS)2) Number of layers of (2), graphene/MoS2The rotation angle between the layers can be adjusted depending on the desired characteristics of the device, such as the superconducting characteristics of the present invention (rotation angle 8-10).
Example 1
MoS construction by mechanical transfer method2A graphene heterojunction, MoS2The rotation angle between the heterojunction structure and the graphene layer is 8 degrees, and the heterojunction structure optimization and the energy band structure calculation are carried out by adopting a first principle. As shown in fig. 3, the occurrence of a flat band structure (in a rectangular box) near the fermi level means that there is a superconducting property.
Example 2
MoS construction by mechanical transfer method2A graphene heterojunction, MoS2The rotation angle between the heterojunction structure and the graphene layer is 10 degrees, and the heterojunction structure optimization and the energy band structure calculation are carried out by adopting a first principle. As shown in fig. 4, the occurrence of a flat band structure (in a rectangular frame) near the fermi level means that there is a superconducting property.
Comparative example 1
MoS construction by mechanical transfer method2A graphene heterojunction, MoS2The rotation angle between the heterojunction structure and the graphene layer is 5 degrees, and the heterojunction structure optimization and the energy band structure calculation are carried out by adopting a first principle. As shown in fig. 5, no flat band structure occurs near the fermi level, meaning that there is no superconducting phenomenon.
By comparisonExample 1, example 2 and comparative example 1, it can be seen that MoS2Different rotation angles between the heterojunction and the graphene stacking layers can obviously influence the energy band structure of the heterojunction system, so that the optical, electrical and magnetic characteristics of the heterojunction are changed, and the heterojunction system can have a flat band structure to cause a superconducting phenomenon in a specific layer-to-layer stacking (rotating) structure.
It should be understood that various changes and modifications of the present invention can be made by those skilled in the art after reading the above description of the present invention, and equivalents thereof fall within the scope of the appended claims of the present application.
Claims (4)
1. The application of the molybdenum disulfide/graphene heterojunction device on the superconducting device is characterized in that the molybdenum disulfide/graphene heterojunction device comprises a molybdenum disulfide material layer and a graphene material layer, and the rotation angle between the molybdenum disulfide and the graphene layer is 7-15 degrees;
the number of layers of the molybdenum disulfide material layer is 2-5, and the number of layers of the graphene material layer is 1-2.
2. The use of a molybdenum disulfide/graphene heterojunction device as in claim 1 in a superconducting device, wherein the rotation angle between the molybdenum disulfide and the graphene layer is between 8 ° and 10 °.
3. Use of a molybdenum disulfide/graphene heterojunction device as claimed in claim 1 in a superconducting device, wherein said molybdenum disulfide/graphene heterojunction device comprises an insulating layer.
4. The application of the molybdenum disulfide/graphene heterojunction device on a superconducting device according to any one of claims 1 to 3, wherein the molybdenum disulfide/graphene heterojunction is prepared by a mechanical transfer method and a conventional micro-nano processing technology.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107068745A (en) * | 2017-03-31 | 2017-08-18 | 北京交通大学 | A kind of field-effect transistor and preparation method thereof |
| CN110335819A (en) * | 2019-06-25 | 2019-10-15 | 杭州电子科技大学 | A kind of regulation method of two dimension Transition-metal dichalcogenide energy valley polarization characteristic |
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| CN107068745A (en) * | 2017-03-31 | 2017-08-18 | 北京交通大学 | A kind of field-effect transistor and preparation method thereof |
| CN110335819A (en) * | 2019-06-25 | 2019-10-15 | 杭州电子科技大学 | A kind of regulation method of two dimension Transition-metal dichalcogenide energy valley polarization characteristic |
Non-Patent Citations (2)
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| Correlated insulator behaviour at half-filling in magic-angle graphene superlattices;Yuan Cao et al.;《Nature》;20180405;第556卷(第7699期);全文 * |
| Modulating PL and electronic structures of MoS2/graphene heterostructures viainterlayer twisting angle;Du Luojun et al.;《Applied Physics Letters》;20171225;第111卷(第26期);第2页左栏第17-19行、第4页左栏第22-23和Supplementary第Ⅰ部分第1行以及第Ⅴ部分第1行 * |
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