CN104752461B - A kind of double-side display device and preparation method thereof - Google Patents
A kind of double-side display device and preparation method thereof Download PDFInfo
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Abstract
A kind of double-side display device of the present invention, two opposite Organic Light Emitting Diodes of light-emitting surface are arranged in same pixel unit can realize double-sided display effect in the case where ensureing high pixel resolution, resolution.A kind of preparation method of double-side display device of the present invention, double-sided display can be shown by preparing two opposite Organic Light Emitting Diodes of light-emitting surface simultaneously in same pixel unit, not only preparation process is simple, and it can realize high-resolution and high-res, the manufacturing cost for effectively reducing double-side display device improves the display quality of double-side display device.
Description
Technical field
The present invention relates to display technology fields, and in particular to a kind of double-faced organic luminous display device and preparation method thereof.
Background technology
Organic light-emitting display device（Full name in English Organic Light-Emitting Display, abbreviation OLED）It is main
Dynamic luminescent device, has many advantages, such as that high contrast, wide viewing angle, low-power consumption, volume are thinner, and being expected to, which becomes next-generation mainstream tablet, shows
Show technology, is most one of technology that attracts attention in current flat panel display.
With information transmission progress and electronic product evolution, in addition to organic light-emitting display device reaction speed,
Resolution ratio constantly researches and develops improvement with image quality various aspects, more pursues the breakthrough in function or display pattern.Therefore, double-sided display is also
One important directions of the following display device development, double-sided display can extend image spacing, make the visual field broader, also can be fast
Speed switching and the more work of processing, have huge potential using value in fields such as advertising display, video conferences.
Traditional double-side display device is filled with two back-to-back direction groups of independent display units progress mostly reaches two-sided aobvious
The effect shown.For example, Chinese patent literature CN1815748A discloses a kind of double-side display device, as shown in Figure 1, including substrate
21, two Organic Light Emitting Diodes 22 and 23 are separately positioned on 21 upper and lower surface of substrate, two protective layers 24 and 25 difference
Organic Light Emitting Diode 22 and 23 is covered to completely cut off steam and oxygen.The upper surface and lower surface of substrate 21 all has bonding land
26 are located at outside protective layer 24 and protective layer 25, to be electrically connected image control assembly 27.Although the double-side display device energy
It realizes double-sided display, but is equivalent on thickness twice of one side show device, that is, two the reversed of display device are folded
Add, loses the more and more frivolous requirement that current electronic product is pursued.
To solve the above-mentioned problems, Chinese patent literature CN1832193A proposes the solution of another double-side display device
Scheme, as shown in Fig. 2, include substrate, coplanar multiple organic light-emitting diode pixel battle arrays luminous downwards being disposed on the substrate
Row and multiple organic light emitting diode pixel arrays luminous upwards, wherein downwards luminous organic light emitting diode pixel array with to
Upper luminous organic light emitting diode pixel array arrangement interlaced with each other, to achieve the effect that double-sided display.The double-sided display dress
It is effectively thinned the larger problem of traditional double-side display device thickness, the resolution ratio and solution of the double-side display device although setting
Analysis degree is only the half of normal displays, and display picture has stronger granular sensation, display effect poor.
Invention content
For this purpose, to be solved by this invention is existing double-side display device resolution ratio and the low problem of resolution, do not increasing
Under the premise of adding display device thickness, the present invention provides a kind of resolution ratio and the high double-side display device and its preparation side of resolution
Method.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
A kind of double-side display device of the present invention, including substrate, several pixel units of setting on the substrate,
The pixel unit includes the first Organic Light Emitting Diode and the second Organic Light Emitting Diode of same layer setting, and described first is organic
Light emitting diode includes the first pixel electrode, the first organic luminous layer and the first pixel to electrode, second organic light emission two
Pole pipe includes the second pixel electrode, the second organic luminous layer and the second pixel to electrode；First pixel electrode and described
Two pixels are reflecting electrode to electrode, and first pixel is transmission electrode to electrode and second pixel electrode；Described
One organic hair diode is identical with the second Organic Light Emitting Diode chromaticity coordinates.
The pixel unit further includes thin film transistor (TFT), first pixel electrode and second pixel electrode respectively with
The source electrode of the same thin film transistor (TFT) or drain electrode electrical connection.
Isolation first Organic Light Emitting Diode is provided on first pixel electrode and second pixel electrode
With the pixel confining layer of second Organic Light Emitting Diode.
The reflecting electrode is the ITO layer for stacking gradually setting, Ag layers and ITO layer, or stack gradually setting ITO layer,
Al layers and ITO layer.
The transmission electrode is ITO layer, IZO layers, the stacked structures of one or more compositions in AZO layers.
First Organic Light Emitting Diode and second Organic Light Emitting Diode also each include independently electron injection
One or more groups in layer, electron transfer layer, hole blocking layer, electronic barrier layer, hole transmission layer, hole injection layer
It closes.
The preparation method of double-side display device of the present invention, includes the following steps：
S1, the driving circuit that each pixel unit is formed on substrate；
S2, the first pixel electrode and the second pixel electrode, the first pixel electrode and the second pixel are formed on driving circuit
Electrode is electrically connected with driving circuit；
S3, directly on the first pixel electrode and the second pixel electrode pixel confining layer is formed, be arranged in pixel confining layer
There are the second through-hole and third through-hole of exposure the first pixel electrode and the second pixel electrode；
S4, the first organic luminous layer and the first pixel are formed to electricity on first pixel electrode that the second through-hole limits
Pole forms the second organic light emission and second pixel electrode on second pixel electrode that third through-hole limits.
The driving circuit includes thin film transistor (TFT).
The above technical solution of the present invention has the following advantages over the prior art：
1, a kind of double-side display device of the present invention, including substrate, several pixel lists of setting on the substrate
Member, the pixel unit include same layer setting the first Organic Light Emitting Diode and the second Organic Light Emitting Diode, described first
Organic Light Emitting Diode includes the first pixel electrode, the first organic luminous layer and the first pixel to electrode, second organic hair
Optical diode includes the second pixel electrode, the second organic luminous layer and the second pixel to electrode；First pixel electrode and institute
It is reflecting electrode to electrode to state the second pixel, and first pixel is transmission electrode to electrode and second pixel electrode；Institute
It is identical with second organic luminous layer to state the first organic luminous layer；Two of light-emitting surface on the contrary are set i.e. in same pixel unit
A Organic Light Emitting Diode can realize double-sided display effect in the case where ensureing high pixel resolution, resolution.
2, the preparation method of a kind of double-side display device of the present invention prepares light extraction simultaneously in same pixel unit
Two opposite Organic Light Emitting Diodes of face, not only preparation process is simple, and can realize high pixel resolution and resolution
Double-sided display effectively reduces the manufacturing cost of double-side display device, improves the display quality of double-side display device.
Description of the drawings
In order to make the content of the present invention more clearly understood, it below according to specific embodiments of the present invention and combines
Attached drawing, the present invention is described in further detail, wherein
Fig. 1 is the structural schematic diagram of double-side display device disclosed in patent document CN1815748A；
Fig. 2 is the structural schematic diagram of double-side display device disclosed in patent document CN1832193A；
Fig. 3 is the structural schematic diagram of double-side display device of the present invention.
Reference numeral is expressed as in Fig. 3：11- substrates, 21- buffer layers, 31- semiconductor layers, the first insulating layers of 41-, 51- grid
Pole layer, 61- second insulating layers, 71- drain electrode, 72- source electrodes, 81- planarization layers, the first pixel electrodes of 91-, 92- the second pixel electricity
Pole, 101- pixel confining layers, the first organic luminous layers of 111-, the second organic luminous layers of 112-, the first pixels of 121- to electrode,
The second pixels of 122- are to electrode.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the reality of the present invention
The mode of applying is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
On the contrary, providing these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, the areas Ceng He can be exaggerated
The size and relative size in domain.It should be understood that when element such as layer, region or substrate are referred to as " being formed in " or " setting
" another element "upper" when, which can be arranged directly on another element, or there may also be intermediary elements.
On the contrary, when element is referred to as on " being formed directly into " or " being set up directly on " another element, intermediary element is not present.
The present embodiment provides a kind of double-side display devices, including substrate 11, several pixel lists of setting on the substrate
Member.
As shown in figure 3, the pixel unit includes the first Organic Light Emitting Diode and the second organic light emission of same layer setting
Diode, first Organic Light Emitting Diode include the first pixel electrode 91, the first organic luminous layer 111 and the first pixel pair
Electrode 121, second Organic Light Emitting Diode include the second pixel electrode 92, the second organic luminous layer 112 and the second pixel
To electrode 122；First pixel electrode 91 and second pixel are reflecting electrode, first pixel pair to electrode 122
Electrode 121 and second pixel electrode 92 are transmission electrode；I.e. described first Organic Light Emitting Diode and described second organic
The light-emitting surface of light emitting diode is oppositely arranged.And first Organic Light Emitting Diode and second Organic Light Emitting Diode
Chromaticity coordinates is identical, i.e., luminescent color is identical so that the double-side display device tow sides show that picture is identical.
It is to stack gradually ITO layer, Ag layers and the ITO layer of setting, or stack gradually that the reflecting electrode, which is selected from but not limited to,
The ITO layer of setting, Al layers and ITO layer, the present embodiment preferably stack gradually the ITO layer of setting, Ag layers and ITO layer.The transmission
Electrode is selected from but not limited to ITO layer, IZO（Indium-zinc oxide）Layer, AZO（Al-Doped ZnO）One or more compositions in layer
Stacked structure, the preferred ITO layer of the present embodiment.
Double-side display device described in the present embodiment is preferably active matrix driving display device, i.e., the described pixel unit is by film
Transistor driving, therefore further include thin film transistor (TFT) in the pixel unit, in order to realize the double-side display device positive and negative two
Face simultaneous display, first Organic Light Emitting Diode and second Organic Light Emitting Diode are driven by same thin film transistor (TFT)
It is dynamic, i.e., described first pixel electrode 91 and second pixel electrode 92 respectively with the source electrode 72 of the same thin film transistor (TFT) or
71 electrical connection of drain electrode.The preferred top gate structure of thin film transistor (TFT) described in the present embodiment, as shown in figure 3, including stacking gradually setting
Semiconductor layer 31, the first insulating layer 41, grid layer 51, second insulating layer 61 on the substrate 11 and source/drain electrode layer,
Source electrode 72 in the source/drain electrode layer and drain electrode 71 are respectively by penetrating through first insulating layer 41 and second insulating layer 61
Through-hole is connected with the semiconductor layer 31.
As the other embodiment of the present invention, the thin film transistor (TFT) can also be bottom grating structure or double-gate structure,
To achieve the object of the present invention, belong to the scope of protection of the present invention.
As the other embodiment of the present invention, the double-side display device can also be passive drive display device, also may be used
To achieve the object of the present invention, belong to the scope of protection of the present invention.
In order to provide flat making region and the various conducting wires of insulation to Organic Light Emitting Diode, including film crystal
Planarization layer 81 is provided on the driving circuit of pipe, first pixel electrode 91 and second pixel electrode 92 are directly arranged
On the planarization layer 81, and by being arranged in the through-hole in the planarization layer 81 and the same thin film transistor (TFT)
The 71 contact electrical connection of the source electrode 72 or drain electrode.
The planarization layer 81 is selected from but not limited to organic photoresist layer, and organic photoresist is purchase used in the present embodiment
The DL series produced from Toray.
It is provided on first pixel electrode 91 and second pixel electrode 92 and first organic light emission two is isolated
The pixel confining layer 101 of pole pipe and second Organic Light Emitting Diode.
As the other embodiment of the present invention, in order to reduce electrode and organic luminous layer in each Organic Light Emitting Diode
Between energy level potential barrier, first Organic Light Emitting Diode and second Organic Light Emitting Diode also each include independently electricity
It is one or more in sub- implanted layer, electron transfer layer, hole blocking layer, electronic barrier layer, hole transmission layer, hole injection layer
Combination.
The preparation method of the double-side display device, includes the following steps：
S1, the driving circuit for forming each pixel unit on the substrate 11；Double-side display device described in the present embodiment is preferred
Active matrix driving, driving circuit include at least two thin film transistor (TFT)（Switching thin-film transistor and driving thin film transistor (TFT)）With 1
Reservior capacitor, specific preparation method is compared with technology.
S2, planarization layer 81 is formed on driving circuit by coating process, and by photoetching process in planarization layer 81
Middle two first through hole for forming two exposure driving thin film transistor (TFT) source electrodes 72, in the corresponding planarization layer of each pixel unit 81
The first pixel electrode 111 of upper formation and the second pixel electrode 112, the first pixel electrode 111 and the second pixel electrode 112 are by setting
The first through hole set in the planarization layer 81 is electrically connected with the driving circuit in the pixel unit.
As the other embodiment of the present invention, the planarization layer 81 can also by silk-screen printing etc. other）Technique system
It is standby, the purpose of the present invention may be implemented, belong to the scope of protection of the present invention.
S3, the first pixel electrode 91 of covering and the second picture are directly formed on planarization layer 81 by coating and exposure technology
The pixel confining layer 101 of plain electrode 92 is provided with the first pixel electrode 91 of exposure and the second pixel in the pixel confining layer 101
The second through-hole and third through-hole of electrode 92.
As the other embodiment of the present invention, the pixel confining layer 101 can also pass through other techniques such as silk-screen printing
It prepares, the purpose of the present invention may be implemented, belong to the scope of protection of the present invention
S4, the first organic luminous layer is formed on first pixel electrode 91 that the second through-hole limits by evaporation process
111, the first pixel is formed to electrode 121 on the first organic luminous layer 111 by evaporation process；By evaporation process in third
The second organic luminous layer 112 is formed on second pixel electrode 92 that through-hole limits, by evaporation process in second organic hair
The second pixel is formed on photosphere 112 to electrode 122.
It can be with as the first organic luminous layer 111 described in the other embodiment of the present invention and the second organic luminous layer 112
It is prepared by coating process；First pixel can also be by sputtering work to electrode 122 to electrode 121 and second pixel
Prepared by skill, the purpose of the present invention may be implemented, belong to the scope of protection of the present invention.
It is opposite to prepare in same pixel unit light-emitting surface simultaneously for a kind of preparation method of double-side display device
Two Organic Light Emitting Diodes, not only preparation process is simple, and can realize the double-sided display of high pixel resolution and resolution,
The manufacturing cost of double-side display device is effectively reduced,
By the calculation formula of resolution ratio：
PPI(Pixel per Inch)=1inch2/pixel area
It is found that the double-side display device disclosed in Chinese patent literature CN1832193A because different light emission directions as
Element is staggered, and therefore, the pixel shown to single direction under per inch is only the 1/2 of number of total picture element amount；And it is of the present invention
A kind of double-side display device, under the conditions of same specification, resolution ratio is two-sided aobvious described in Chinese patent literature CN1832193A
Twice of the resolution ratio of showing device ensure that high resolution ratio, improve double-sided display in the case where total light-emitting area is constant
The display quality of device.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
Variation is still in the protection scope of this invention.
Claims (7)
1. a kind of double-side display device, including substrate, several pixel units of setting on the substrate, which is characterized in that institute
State the first Organic Light Emitting Diode and the second Organic Light Emitting Diode that pixel unit includes same layer setting, first organic hair
Optical diode includes the first pixel electrode, the first organic luminous layer and the first pixel to electrode, second organic light-emitting diodes
Pipe includes the second pixel electrode, the second organic luminous layer and the second pixel to electrode；First pixel electrode and described second
Pixel is reflecting electrode to electrode, and first pixel is transmission electrode to electrode and second pixel electrode；Described first
Organic Light Emitting Diode is identical with the second Organic Light Emitting Diode chromaticity coordinates；The pixel unit further includes film crystal
Pipe, first pixel electrode and second pixel electrode are electrically connected with the source electrode of the same thin film transistor (TFT) or drain electrode respectively
It connects.
2. double-side display device according to claim 1, which is characterized in that first pixel electrode and second picture
The pixel confining layer that first Organic Light Emitting Diode and second Organic Light Emitting Diode is isolated is provided on plain electrode.
3. double-side display device according to claim 1, which is characterized in that the reflecting electrode is to stack gradually setting
ITO layer, Ag layers and ITO layer, or stack gradually the ITO layer of setting, Al layers and ITO layer.
4. double-side display device according to claim 1, which is characterized in that the transmission electrode be ITO layer, IZO layers,
The stacked structure of one or more compositions in AZO layers.
5. according to any double-side display devices of claim 1-4, which is characterized in that first Organic Light Emitting Diode
Also each include independently electron injecting layer, electron transfer layer, hole blocking layer, electronics resistance with second Organic Light Emitting Diode
One or more combinations in barrier, hole transmission layer, hole injection layer.
6. a kind of preparation method of double-side display device as described in claim 1-5 any one, which is characterized in that including such as
Lower step：
S1, the driving circuit that each pixel unit is formed on substrate；
S2, the first pixel electrode and the second pixel electrode, the first pixel electrode and the second pixel electrode are formed on driving circuit
It is electrically connected with driving circuit；
S3, directly on the first pixel electrode and the second pixel electrode pixel confining layer is formed, is provided in pixel confining layer sudden and violent
Reveal the second through-hole and third through-hole of the first pixel electrode and the second pixel electrode；
S4, the first organic luminous layer and the first pixel are formed on first pixel electrode that the second through-hole limits to electrode,
The second organic luminous layer and second pixel electrode are formed on second pixel electrode that third through-hole limits.
7. the preparation method of double-side display device according to claim 6, which is characterized in that the driving circuit includes thin
Film transistor.
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| KR101831346B1 (en) * | 2015-08-07 | 2018-02-23 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus and method for manufacturing the same |
| CN105807513A (en) * | 2016-05-30 | 2016-07-27 | 京东方科技集团股份有限公司 | Double-side display panel, making method thereof and double-side display device |
| CN107195662A (en) | 2017-06-08 | 2017-09-22 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, display device and display methods |
| CN107657922A (en) * | 2017-10-27 | 2018-02-02 | 朱秋华 | A kind of double-sided OLED display panel and device |
| CN109300960B (en) * | 2018-10-10 | 2021-04-27 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
| CN110729328B (en) * | 2019-09-17 | 2022-03-08 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting diode display panel and organic light emitting diode display device |
| CN111489658B (en) * | 2020-04-23 | 2022-04-08 | 上海天马微电子有限公司 | Double-sided display panel, manufacturing method thereof and double-sided display device |
| CN112786668A (en) * | 2021-01-08 | 2021-05-11 | 武汉华星光电半导体显示技术有限公司 | Double-sided display panel |
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| CN1832192A (en) * | 2006-02-10 | 2006-09-13 | 友达光电股份有限公司 | Two-sided luminous organic electroluminescence device and electronic device |
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| KR100496425B1 (en) * | 2003-05-30 | 2005-06-17 | 삼성에스디아이 주식회사 | OLED and fabrication method thereof |
| KR100864882B1 (en) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | OLED Display Device and fabricating method of the same |
| KR100924137B1 (en) * | 2008-01-31 | 2009-10-29 | 삼성모바일디스플레이주식회사 | Organic Light Emitting Diode Display and method for fabricating of the same |
| KR100922062B1 (en) * | 2008-02-15 | 2009-10-16 | 삼성모바일디스플레이주식회사 | Organic Light Emitting Display device |
| CN103345884B (en) * | 2013-06-26 | 2016-03-09 | 京东方科技集团股份有限公司 | double-side display device and preparation method thereof |
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| CN1832192A (en) * | 2006-02-10 | 2006-09-13 | 友达光电股份有限公司 | Two-sided luminous organic electroluminescence device and electronic device |
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