CN109300960B - Display device and manufacturing method thereof - Google Patents
Display device and manufacturing method thereof Download PDFInfo
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- CN109300960B CN109300960B CN201811176735.4A CN201811176735A CN109300960B CN 109300960 B CN109300960 B CN 109300960B CN 201811176735 A CN201811176735 A CN 201811176735A CN 109300960 B CN109300960 B CN 109300960B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The application provides a display device and a manufacturing method thereof. The display device includes a substrate and a light emitting unit. The light emitting unit comprises a first light emitting unit and a second light emitting unit which have different light emitting directions. The display device further includes a thin film transistor and a storage capacitor over the substrate. The light of the first light-emitting unit is emitted from one side far away from the substrate, and the light of the second light-emitting unit is emitted from the substrate. The thin film transistor and the storage capacitor are located in the orthographic projection range of the first light-emitting unit on the substrate. This application is through setting up the thin film transistor in the display device in the district that top luminescence unit is located to avoided thin film transistor to send sheltering from of light to end luminescence unit, improved display device's aperture opening ratio.
Description
Technical Field
The present disclosure relates to display technologies, and particularly to a display device and a method for manufacturing the same.
Background
Compared with the LCD device, the OLED display device has the greatest advantages of being capable of manufacturing devices with large size, ultrathin, flexibility, transparency and double-sided display.
With the diversification of electronic products, the double-sided display function becomes a main feature of a new generation of display devices, especially display devices in some public places. The double-sided light emitting design of the existing display device can reduce the single-side light emitting area of the display device and the resolution. Therefore, a display device is needed to solve the above problems.
Disclosure of Invention
The application provides a display device and a manufacturing method thereof, which are used for solving the problems that the single-side light-emitting area is reduced and the resolution is reduced due to the double-side light-emitting design of the conventional display device.
In order to solve the above problems, the technical solution provided by the present application is as follows:
according to an aspect of the present invention, there is provided a display device including a substrate and a light emitting unit over the substrate, the light emitting unit including a first light emitting unit and a second light emitting unit, a light emitting direction of the first light emitting unit being opposite to a light emitting direction of the second light emitting unit;
the display device further comprises a thin film transistor and a storage capacitor which are located above the substrate, light of the first light-emitting unit is emitted from one side far away from the substrate, light of the second light-emitting unit is emitted from the substrate, and the thin film transistor and the storage capacitor are located in the orthographic projection range of the first light-emitting unit on the substrate.
According to an embodiment of the present application, each of the light emitting cells is electrically connected to at least two of the thin film transistors and at least one of the storage capacitors.
According to an embodiment of the present application, the thin film transistor includes a first thin film transistor and a second thin film transistor, the first light emitting unit is electrically connected to the first thin film transistor, and the second light emitting unit is electrically connected to the second thin film transistor.
According to one embodiment of the present application, the thin film transistor includes an active layer, a gate insulating layer, a gate metal, and a source drain metal layer electrically connected to the active layer.
According to an embodiment of the present application, the first light emitting unit includes a first light emitting material layer and a first cathode;
the first light-emitting material layer is arranged on the surface of the source drain metal layer of the first thin film transistor.
According to one embodiment of the application, the source and drain metal layers of the first thin film transistor are made of non-transparent materials, and the first cathode is made of transparent materials.
According to an embodiment of the application, the second light emitting unit comprises a second light emitting material and a second cathode;
the second luminescent material is arranged on the surface of the active layer of the second thin film transistor.
According to an embodiment of the present application, the active layer of the second thin film transistor is made of a transparent oxide semiconductor, and the second cathode is made of a non-transparent material.
According to another embodiment of the present application, there is also provided a method of manufacturing a display device, including:
providing a substrate, wherein the substrate comprises a first area and a second area;
forming a first thin film transistor and a second thin film transistor which are positioned in the first area on the substrate, wherein the first thin film transistor and the second thin film transistor respectively comprise an insulating layer, a grid insulating layer, grid metal and source drain metal;
forming a first light-emitting unit on the surface of a source-drain metal of the first thin film transistor, and forming a second light-emitting unit on the surface of an active layer of the second thin film transistor, wherein the first light-emitting unit is positioned in the first area, and the second light-emitting unit is positioned in the second area;
the light emitting direction of the first light emitting unit is opposite to that of the second light emitting unit, the light of the first light emitting unit is emitted from one side far away from the substrate, and the light of the second light emitting unit is emitted from the substrate.
According to an embodiment of the present application, the first light emitting unit includes a first light emitting material layer and a first cathode, and the second light emitting unit includes a second light emitting material layer and a second cathode;
the first cathode is made of a transparent material, and the second cathode is made of a non-transparent material.
Has the advantages that: this application is through setting up the thin film transistor in the display device in the district that top luminescence unit is located to avoided thin film transistor to send sheltering from of light to end luminescence unit, improved display device's aperture opening ratio.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display device according to an embodiment of the present application;
fig. 2 is a schematic diagram of a film structure of a display device according to an embodiment of the present disclosure.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings, which are included to illustrate specific embodiments that can be implemented by the application. Directional phrases used in this application, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer only to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting. In the drawings, elements having similar structures are denoted by the same reference numerals.
The application provides a display device and a manufacturing method thereof, which are used for solving the problems that the single-side light-emitting area is reduced and the resolution is reduced due to the double-side light-emitting design of the conventional display device.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a display device according to an embodiment of the present disclosure.
Referring to fig. 2, fig. 2 is a schematic view illustrating a film structure of a display device according to an embodiment of the present disclosure.
The application provides a display device 100, include base plate 21 and be located the luminescence unit 20 of base plate 21 top, luminescence unit 20 includes first luminescence unit 11 and second luminescence unit 12, the light-emitting direction of first luminescence unit 11 with the light-emitting direction of second luminescence unit 12 is opposite.
In one embodiment, the substrate 21 may be a glass substrate.
In one embodiment, the display device 100 further includes a buffer layer disposed on the glass substrate 21, the buffer layer may be made of a material including at least one of silicon oxide and silicon nitride, and the buffer layer has a thickness of 1000 to 5000 angstroms.
The display device 100 further includes a thin film transistor 15 (including a first thin film transistor 151 and a second thin film transistor 152) and a storage capacitor 16 over the substrate 21.
In one embodiment, the thin film transistor 15 includes an active layer 17, a gate insulating layer 18, a gate metal 19, and a source-drain metal layer 22. The gate metal 19 and the source/drain metal layer 22 are generally made of non-transparent materials. In the display device 100, the thin film transistor 15 and the storage capacitor 16 are generally located below the light emitting unit. When the light emitting unit 20 is a bottom emission unit, the thin film transistor 15 and the storage capacitor 16 may shield a portion of light emitted from the bottom emission unit, thereby reducing an aperture ratio of the display device 100 and affecting a resolution of the display device 100. However, when the light emitting unit 20 is a top emission unit, light emitted from the top emission unit does not pass through the thin film transistor 15, thereby not interfering with light emission of the display device 100.
In one embodiment, the preparation material of the active layer 17 includes a transparent oxide semiconductor including, but not limited to, indium zinc oxide. The thickness of the active layer 17 may be 100 to 1000 angstroms.
In one embodiment, the active layer 17 includes a channel in the middle and source and drain contact regions at both ends.
In one embodiment, the material for preparing the gate insulating layer 18 may include at least one of silicon oxide and silicon nitride. The buffer layer has a thickness of 1000 to 3000 angstroms.
In one embodiment, the material for preparing the gate metal 19 may include at least one of molybdenum, aluminum, copper, and titanium. The thickness of the gate metal 19 may be 2000 to 8000 angstroms.
In one embodiment, an interlayer dielectric layer is disposed on the gate metal 19, and a source/drain metal layer 22 is disposed on the interlayer dielectric layer. The preparation material of the interlayer dielectric layer comprises at least one of silicon nitride and silicon oxide. The interlayer medium layer machine can be of a single-layer structure or a double-layer structure.
In one embodiment, the light of the first light emitting unit 11 is emitted from a side away from the substrate 21, the light of the second light emitting unit 12 is emitted from the substrate 21, and the thin film transistor 15 and the storage capacitor 16 are located in a forward projection range of the first light emitting unit 11 on the substrate 21. This application is through setting up thin film transistor 15 first luminescence unit 11 is in the orthographic projection within range of base plate 21, and then avoid thin film transistor 15 to the sheltering from of second luminescence unit 12 ejection of light has improved display device 100's aperture opening ratio.
In one embodiment, to complete the driving of the light emitting cells 20, each of the light emitting cells is electrically connected to at least two of the thin film transistors 15 and at least one of the storage capacitors 16.
In one embodiment, the first light emitting unit 11 is a top light emitting unit, and the second light emitting unit 12 is a bottom light emitting unit.
In one embodiment, the first light emitting units 11 and the second light emitting units 12 are alternately distributed.
In one embodiment, the first light emitting unit 11 and the second light emitting unit 12 are alternately distributed along the longitudinal direction and the transverse direction on a certain plane.
In one embodiment, the thin film transistor 15 includes a first thin film transistor 151 and a second thin film transistor 152, the first light emitting unit 11 is electrically connected to the first thin film transistor 151, and the second light emitting unit 12 is electrically connected to the second thin film transistor 152. It should be understood that a certain thin film transistor 15 is electrically connected to only one of the first light emitting unit 11 and the second light emitting unit 12. However, both the first thin film transistor 151 and the second thin film transistor 152 are located in the front projection range of the first light emitting unit 11 on the substrate 21.
By arranging the thin film transistor in the orthographic projection range of the first light-emitting unit 11 on the substrate 21, the bottom light-emitting aperture ratio can be doubled without changing the resolution and the top light-emitting aperture ratio of the display device 100, so that the aperture ratio of the whole display device 100 is increased by one third, and the quality of the display device 100 is improved.
In one embodiment, the active layer 17 of the second thin film transistor 152 may be used as an anode of the second light emitting unit 12.
In one embodiment, the first light emitting unit 11 includes a first light emitting material layer 112 and a first cathode 111. It should be explained that the first light emitting unit 11 includes, but is not limited to, a first light emitting material layer 112 and a first cathode 111.
In an embodiment, the first light emitting material layer 112 is disposed on the surface of the source/drain metal layer 22 of the first thin film transistor 151, and the source/drain metal layer 22 of the first thin film transistor 151 is simultaneously used as the anode layer of the first light emitting unit 11. And the separate preparation of the anode layer of the first light emitting unit 11 is avoided, so that the production cost of the display device 100 is saved, and the manufacturing efficiency of the display device is improved.
In one embodiment, the source-drain metal layer 22 of the first thin film transistor 151 is made of a non-transparent material, and the first cathode 111 is made of a transparent material.
In one embodiment, the first cathode 111 is made of a material including, but not limited to, at least one of magnesium and silver.
In one embodiment, the surface of the source/drain metal layer 22 is covered with a transparent metal layer.
In one embodiment, the transparent metal layer may be made of a material including indium zinc oxide. To ensure proper operation of the first luminescent material layer 112.
In one embodiment, the first thin film transistor 151 and the second thin film transistor 152 are made of the same material.
In one embodiment, the first thin film transistor 151 and the second thin film transistor 152 are made of different materials.
In one embodiment, the material for preparing the source/drain metal layer 22 may include, but is not limited to, at least one of aluminum, titanium, and silver.
In one embodiment, the second light emitting unit 12 includes, but is not limited to, a second light emitting material layer 122 and a second cathode 121, and the second light emitting material layer 122 is disposed on the surface of the active layer 17 of the second thin film transistor 152. The active layer 17 of the second thin film transistor 152 is also used as an anode layer of the second light emitting unit 12. And further, the separate preparation of the anode layer in the second light emitting unit 12 is avoided, so that the production cost of the display device is saved, the photomask is saved, and the manufacturing efficiency of the display device is improved.
In one embodiment, in order to meet the requirement of the second light emitting unit 12 as a bottom light emitting unit, the active layer 17 of the second thin film transistor 152 is made of a transparent oxide semiconductor, and the second cathode 121 is made of a non-transparent material.
In one embodiment, the second cathode 121 is made of a material including, but not limited to, aluminum.
According to another aspect of the present invention, there is also provided a method of manufacturing a display device, including:
providing a substrate 21, wherein the substrate 21 comprises a first area 13 and a second area 14;
forming a first thin film transistor 151 and a second thin film transistor 152 located in a first region 13 on the substrate 21, wherein each of the first thin film transistor 151 and the second thin film transistor 152 comprises an insulating layer, a gate metal 19 and a source drain metal;
forming a first light-emitting unit 11 on the source-drain metal surface of the first thin film transistor 151, and forming a second light-emitting unit 12 on the surface of the active layer 17 of the second thin film transistor 152, where the first light-emitting unit 11 is located in the first region 13, and the second light-emitting unit 12 is located in the second region 14;
the light emitting direction of the first light emitting unit 11 is opposite to the light emitting direction of the second light emitting unit 12, the light of the first light emitting unit 11 is emitted from a side far away from the substrate 21, and the light of the second light emitting unit 12 is emitted from the substrate 21.
In one embodiment, the first light emitting unit 11 includes a first light emitting material layer 112 and a first cathode 111, the second light emitting unit 12 includes a second light emitting material layer 122 and a second cathode 121;
the first cathode 111 is made of a transparent material, and the second cathode 121 is made of a non-transparent material.
In one embodiment, the first luminescent material layer 112 and the second luminescent material layer 122 are both prepared by an inkjet printing process.
Has the advantages that: this application is through setting up the thin film transistor in the display device in the district that top luminescence unit is located to avoided thin film transistor to send sheltering from of light to end luminescence unit, improved display device's aperture opening ratio.
In summary, although the present application has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present application, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, so that the scope of the present application shall be determined by the appended claims.
Claims (8)
1. The display device is characterized by comprising a substrate and a light emitting unit positioned above the substrate, wherein the light emitting unit comprises a first light emitting unit and a second light emitting unit, and the light emitting direction of the first light emitting unit is opposite to that of the second light emitting unit;
the display device further comprises a thin film transistor and a storage capacitor which are positioned above the substrate, light rays of the first light-emitting unit are emitted from one side far away from the substrate, light rays of the second light-emitting unit are emitted from the substrate, and the thin film transistor and the storage capacitor are positioned in the orthographic projection range of the first light-emitting unit on the substrate;
the thin film transistor comprises a first thin film transistor and a second thin film transistor, the first light-emitting unit is electrically connected with the first thin film transistor, the second light-emitting unit is electrically connected with the second thin film transistor, and orthographic projections of the first thin film transistor and the second thin film transistor on the display device are positioned in the first light-emitting unit;
the thin film transistor comprises an active layer, a gate insulating layer, gate metal and a source drain metal layer electrically connected with the active layer;
the source-drain metal layer of the first thin film transistor is simultaneously used as the anode of the first light-emitting unit;
the active layer of the second thin film transistor simultaneously serves as an anode of the second light emitting unit.
2. The display device according to claim 1, wherein each of the light emitting cells is electrically connected to at least two of the thin film transistors and at least one of the storage capacitors.
3. The display device according to claim 1, wherein the first light-emitting unit comprises a first light-emitting material layer and a first cathode;
the first light-emitting material layer is arranged on the surface of the source drain metal layer of the first thin film transistor.
4. The display device according to claim 3, wherein the source-drain metal layer of the first thin film transistor is made of a non-transparent material, and the first cathode is made of a transparent material.
5. The display device according to claim 1, wherein the second light-emitting unit comprises a second light-emitting material and a second cathode;
the second luminescent material is arranged on the surface of the active layer of the second thin film transistor.
6. The display device according to claim 5, wherein an active layer of the second thin film transistor is formed using a transparent oxide semiconductor, and wherein the second cathode is formed using a non-transparent material.
7. A method of fabricating a display device, comprising:
providing a substrate, wherein the substrate comprises a first area and a second area;
forming a first thin film transistor and a second thin film transistor which are positioned in the first area on the substrate, wherein the first thin film transistor and the second thin film transistor respectively comprise an active layer, a grid electrode insulating layer, grid electrode metal and a source drain electrode metal layer;
forming a first light-emitting unit on the surface of a source-drain metal layer of the first thin film transistor, and forming a second light-emitting unit on the surface of an active layer of the second thin film transistor, wherein the first light-emitting unit is positioned in the first area, and the second light-emitting unit is positioned in the second area;
the light emitting direction of the first light emitting unit is opposite to that of the second light emitting unit, the light of the first light emitting unit is emitted from one side far away from the substrate, and the light of the second light emitting unit is emitted from the substrate;
the first light-emitting unit is electrically connected with the first thin film transistor, the second light-emitting unit is electrically connected with the second thin film transistor, and orthographic projections of the first thin film transistor and the second thin film transistor on the display device are positioned in the first light-emitting unit;
the source-drain metal layer of the first thin film transistor is simultaneously used as the anode of the first light-emitting unit;
the active layer of the second thin film transistor simultaneously serves as an anode of the second light emitting unit.
8. The method according to claim 7, wherein the first light-emitting unit includes a first light-emitting material layer and a first cathode, and the second light-emitting unit includes a second light-emitting material layer and a second cathode;
the first cathode is made of a transparent material, and the second cathode is made of a non-transparent material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811176735.4A CN109300960B (en) | 2018-10-10 | 2018-10-10 | Display device and manufacturing method thereof |
| PCT/CN2019/077414 WO2020073596A1 (en) | 2018-10-10 | 2019-03-08 | Display device and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811176735.4A CN109300960B (en) | 2018-10-10 | 2018-10-10 | Display device and manufacturing method thereof |
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| CN109300960A CN109300960A (en) | 2019-02-01 |
| CN109300960B true CN109300960B (en) | 2021-04-27 |
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| WO (1) | WO2020073596A1 (en) |
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| CN109300960B (en) * | 2018-10-10 | 2021-04-27 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
| CN110112183A (en) * | 2019-04-12 | 2019-08-09 | 深圳市华星光电半导体显示技术有限公司 | Double face display panel and preparation method thereof |
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| EP2326143B1 (en) * | 2003-01-24 | 2013-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Electronic book |
| CN100372124C (en) * | 2006-02-10 | 2008-02-27 | 友达光电股份有限公司 | Two-sided luminous organic electroluminescence device and electronic device |
| KR102092705B1 (en) * | 2013-08-16 | 2020-03-25 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method thereof |
| TWI612656B (en) * | 2013-08-19 | 2018-01-21 | 友達光電股份有限公司 | Dual emission type display panel |
| CN104752461B (en) * | 2013-12-25 | 2018-09-04 | 昆山国显光电有限公司 | A kind of double-side display device and preparation method thereof |
| CN104022142B (en) * | 2014-06-12 | 2017-10-17 | 四川虹视显示技术有限公司 | The top emitting AMOLED devices and method for making of high aperture |
| CN105097948B (en) * | 2015-08-14 | 2018-12-21 | 京东方科技集团股份有限公司 | Thin film transistor (TFT), array substrate and preparation method thereof, display panel and device |
| KR102523344B1 (en) * | 2015-11-25 | 2023-04-20 | 삼성디스플레이 주식회사 | Organic light emitting display device |
| CN107564940A (en) * | 2017-07-04 | 2018-01-09 | 深圳市华星光电半导体显示技术有限公司 | Double-sided OLED display |
| CN107369784B (en) * | 2017-08-31 | 2019-11-26 | 深圳市华星光电半导体显示技术有限公司 | OLED-TFT substrate and its manufacturing method, display panel |
| CN108492771B (en) * | 2018-04-03 | 2020-07-07 | 京东方科技集团股份有限公司 | Double-sided display device and control method thereof |
| CN109300960B (en) * | 2018-10-10 | 2021-04-27 | 深圳市华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
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| CN109300960A (en) | 2019-02-01 |
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