CN104752461A - Double-side display device and manufacturing method thereof - Google Patents
Double-side display device and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a double-side display device. Two organic light-emitting diodes with opposite light-emitting surfaces are arranged in an identical pixel unit, so that a double-side display effect is achieved under the situation of ensuring high pixel resolution and high resolution. The invention also discloses a manufacturing method of the double-side display device. Double-side display can be realized by manufacturing two organic light-emitting diodes with opposite light emitting surfaces in the identical pixel unit. A manufacturing process is simple; a high resolution can be realized; the manufacturing cost of the double-side display device is lowered effectively; and the display quality of the double-side display device is improved.
Description
Technical field
The present invention relates to Display Technique field, be specifically related to a kind of double-faced organic luminous display device and preparation method thereof.
Background technology
Organic light-emitting display device (English full name Organic Light-Emitting Display, be called for short OLED) be active illuminating device, there is the advantages such as high-contrast, wide viewing angle, low-power consumption, volume be thinner, being expected to become main flow flat panel display of future generation, is one of the maximum technology that receives publicity in current flat panel display.
Along with the progress of information transmission and the evolution of electronic product, except constantly researching and developing improvement in the reaction speed of organic light-emitting display device, resolution and image quality each side, more pursue the breakthrough on function or display mode.Therefore, double-sided display is also an important directions of following display unit development, and double-sided display can extend image spacing, makes the visual field broader, also can switch and process more work fast, in the field such as advertising display, video conference, there is huge potential using value.
Traditional double flat-panel display device carries out the assembling of back-to-back direction to reach the effect of double-sided display mainly with two independent display units greatly.Such as; Chinese patent literature CN1815748A discloses a kind of double-side display device; as shown in Figure 1; comprise substrate 21, two Organic Light Emitting Diodes 22 and 23 are separately positioned on substrate 21 upper surface and lower surface, two protective layers 24 and 25 are coated with OLED 22 and 23 respectively with isolated steam and oxygen.The upper surface of substrate 21 and lower surface all have bonding land 26 and are positioned at protective layer 24 and protective layer 25 outside, in order to be electrically connected image control assembly 27.Although described double-side display device can realize double-sided display, thickness is equivalent to the twice of one side display unit, is namely equivalent to the reverse superposition of two display unit, lose the more and more frivolous requirement that current electronic product is pursued.
In order to solve the problem, Chinese patent literature CN1832193A proposes the solution of another kind of double-side display device, as shown in Figure 2, comprise substrate, copline is arranged on multiple downward luminous organic light emitting diode pixel array on substrate and multiple upwards luminous organic light emitting diode pixel array, wherein downward luminous organic light emitting diode pixel array and upwards luminous organic light emitting diode pixel array arrangement interlaced with each other, to reach the effect of double-sided display.Although described double-side display device is effectively thinned the larger problem of traditional double flat-panel display device thickness, the resolution of this double-side display device and resolution are only the half of normal displays, and display frame has stronger granular sensation, and display effect is poor.
Summary of the invention
For this reason, to be solved by this invention is the problem that existing double-side display device resolution and resolution are low, under the prerequisite not increasing display unit thickness, the invention provides a kind of resolution and the high double-side display device of resolution and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of double-side display device of the present invention, comprise substrate, setting some pixel cells on the substrate, described pixel cell comprises the first Organic Light Emitting Diode and second Organic Light Emitting Diode of the setting of same layer, described first Organic Light Emitting Diode comprises the first pixel electrode, the first organic luminous layer and the first pixel to electrode, and described second Organic Light Emitting Diode comprises the second pixel electrode, the second organic luminous layer and the second pixel to electrode; Described first pixel electrode and described second pixel are reflecting electrode to electrode, and described first pixel is transmission electrode to electrode and described second pixel electrode; Described first organic diode is identical with described second Organic Light Emitting Diode chromaticity coordinates.
Described pixel cell also comprises thin-film transistor, and described first pixel electrode and described second pixel electrode are electrically connected with the source electrode of same described thin-film transistor or drain respectively.
Described first pixel electrode and described second pixel electrode are provided with the pixel confining layers of isolating described first Organic Light Emitting Diode and described second Organic Light Emitting Diode.
Described reflecting electrode is stack gradually the ITO layer of setting, Ag layer and ITO layer, or stacks gradually the ITO layer of setting, Al layer and ITO layer.
Described transmission electrode is the stacked structure of one or more compositions in ITO layer, IZO layer, AZO layer.
Described first Organic Light Emitting Diode and described second Organic Light Emitting Diode also independently comprise one or more the combination in electron injecting layer, electron transfer layer, hole blocking layer, electronic barrier layer, hole transmission layer, hole injection layer separately.
The preparation method of double-side display device of the present invention, comprises the steps:
S1, on substrate, form the drive circuit of each pixel cell;
S2, on drive circuit, form the first pixel electrode and the second pixel electrode, the first pixel electrode and the second pixel electrode are electrically connected with drive circuit;
S3, directly on the first pixel electrode and the second pixel electrode, form pixel confining layers, in pixel confining layers, be provided with the second through hole and the third through-hole of exposure first pixel electrode and the second pixel electrode;
S4, described first pixel electrode that limits at the second through hole form the first organic luminous layer and the first pixel to electrode, described second pixel electrode that third through-hole limits forms the second organic light emission and described second pixel electrode.
Described drive circuit comprises thin-film transistor.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of double-side display device of the present invention, comprise substrate, setting some pixel cells on the substrate, described pixel cell comprises the first Organic Light Emitting Diode and second Organic Light Emitting Diode of the setting of same layer, described first Organic Light Emitting Diode comprises the first pixel electrode, the first organic luminous layer and the first pixel to electrode, and described second Organic Light Emitting Diode comprises the second pixel electrode, the second organic luminous layer and the second pixel to electrode; Described first pixel electrode and described second pixel are reflecting electrode to electrode, and described first pixel is transmission electrode to electrode and described second pixel electrode; Described first organic luminous layer is identical with described second organic luminous layer; Namely two Organic Light Emitting Diodes that exiting surface is contrary being set in same pixel cell, when ensureing high pixel resolution, resolution, double-sided display effect can being realized.
2, the preparation method of a kind of double-side display device of the present invention, prepare two Organic Light Emitting Diodes that exiting surface is contrary in same pixel cell simultaneously, not only preparation technology is simple, and the double-sided display of high pixel resolution and resolution can be realized, effectively reduce the preparation cost of double-side display device, improve the display quality of double-side display device.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of double-side display device disclosed in patent documentation CN1815748A;
Fig. 2 is the structural representation of double-side display device disclosed in patent documentation CN1832193A;
Fig. 3 is the structural representation of double-side display device of the present invention.
In Fig. 3, Reference numeral is expressed as: 11-substrate, 21-resilient coating, 31-semiconductor layer, 41-first insulating barrier, 51-grid layer, 61-second insulating barrier, 71-drain electrode, 72-source electrode, 81-planarization layer, 91-first pixel electrode, 92-second pixel electrode, 101-pixel confining layers, 111-first organic luminous layer, 112-second organic luminous layer, 121-first pixel to electrode, 122-second pixel to electrode.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
The present embodiment provides a kind of double-side display device, comprises substrate 11, setting some pixel cells on the substrate.
As shown in Figure 3, described pixel cell comprises the first Organic Light Emitting Diode and second Organic Light Emitting Diode of the setting of same layer, described first Organic Light Emitting Diode comprises the first pixel electrode 91, first organic luminous layer 111 and the first pixel to electrode 121, and described second Organic Light Emitting Diode comprises the second pixel electrode 92, second organic luminous layer 112 and the second pixel to electrode 122; Described first pixel electrode 91 and described second pixel are reflecting electrode to electrode 122, and described first pixel is transmission electrode to electrode 121 and described second pixel electrode 92; Namely the light-emitting area of described first Organic Light Emitting Diode and described second Organic Light Emitting Diode is oppositely arranged.And described first Organic Light Emitting Diode is identical with the chromaticity coordinates of described second Organic Light Emitting Diode, namely glow color is identical, makes the display frame of described double-side display device tow sides identical.
Described reflecting electrode is selected from but is not limited to the ITO layer, Ag layer and the ITO layer that stack gradually setting, or stacks gradually the ITO layer of setting, Al layer and ITO layer, and the present embodiment preferably stacks gradually the ITO layer of setting, Ag layer and ITO layer.Described transmission electrode is selected from but is not limited to ITO layer, IZO(indium-zinc oxide) layer, AZO(Al-Doped ZnO) stacked structures of one or more compositions in layer, the preferred ITO layer of the present embodiment.
Double-side display device described in the present embodiment is preferably active matrix driving display unit, namely described pixel cell is driven by thin-film transistor, therefore also thin-film transistor is comprised in described pixel cell, in order to realize described double-side display device tow sides simultaneous display, described first Organic Light Emitting Diode and described second Organic Light Emitting Diode are driven by same thin film transistor, and namely described first pixel electrode 91 and described second pixel electrode 92 71 to be electrically connected with the source electrode 72 of same described thin-film transistor or drain respectively.The preferred top gate structure of thin-film transistor described in the present embodiment, as shown in Figure 3, comprise and stack gradually semiconductor layer 31, first insulating barrier 41 be arranged on described substrate 11, grid layer 51, second insulating barrier 61 and source/drain electrode layer, the source electrode 72 in described source/drain electrode layer and drain electrode 71 to contact with described semiconductor layer 31 respectively by the through hole of through described first insulating barrier 41 and the second insulating barrier 61 and are connected.
As other embodiments of the present invention, described thin-film transistor can also be bottom grating structure or double-gate structure, all can realize object of the present invention, belong to protection scope of the present invention.
As other embodiments of the present invention, described double-side display device can also be passive drive display unit, also can realize object of the present invention, belong to protection scope of the present invention.
In order to provide smooth making region and the various wire that insulate to Organic Light Emitting Diode, the drive circuit comprising thin-film transistor is provided with planarization layer 81, described first pixel electrode 91 and described second pixel electrode 92 are set directly on described planarization layer 81, and 71 contact by being arranged on through hole in described planarization layer 81 and the described source electrode 72 in same described thin-film transistor or draining and be electrically connected.
Described planarization layer 81 is selected from but is not limited to organic photoresist layer, and organic photoresist used in the present embodiment is the DL series of producing purchased from Dong Li company.
Described first pixel electrode 91 and described second pixel electrode 92 are provided with the pixel confining layers 101 of isolating described first Organic Light Emitting Diode and described second Organic Light Emitting Diode.
As other embodiments of the present invention, in order to reduce the energy level potential barrier in each described Organic Light Emitting Diode between electrode and organic luminous layer, described first Organic Light Emitting Diode and described second Organic Light Emitting Diode also independently comprise one or more the combination in electron injecting layer, electron transfer layer, hole blocking layer, electronic barrier layer, hole transmission layer, hole injection layer separately.
The preparation method of described double-side display device, comprises the steps:
S1, form the drive circuit of each pixel cell on the substrate 11; The preferred active matrix driving of double-side display device described in the present embodiment, drive circuit comprises at least 2 thin-film transistors (switching thin-film transistor and driving thin-film transistor) and 1 reservior capacitor, the same prior art of concrete preparation method.
S2, on drive circuit, form planarization layer 81 by coating process, and in planarization layer 81, form by photoetching process two the first through holes that two expose driving thin-film transistor source electrode 72, the planarization layer 81 that each pixel cell is corresponding is formed the first pixel electrode 111 and the second pixel electrode 112, first pixel electrode 111 and the second pixel electrode 112 be electrically connected with the drive circuit in this pixel cell by the first through hole be arranged in described planarization layer 81.
As other embodiments of the present invention, described planarization layer 81 can also by silk screen printing etc. other) technique preparation, all can realize object of the present invention, belong to protection scope of the present invention.
S3, pixel confining layers 101 by coating and exposure technology directly formation covering first pixel electrode 91 and the second pixel electrode 92 on planarization layer 81, be provided with the second through hole and the third through-hole of exposure first pixel electrode 91 and the second pixel electrode 92 in described pixel confining layers 101.
As other embodiments of the present invention, described pixel confining layers 101 by other technique preparations such as silk screen printings, all can also can realize object of the present invention, belong to protection scope of the present invention
S4, described first pixel electrode 91 that limited at the second through hole by evaporation process form the first organic luminous layer 111, on the first organic luminous layer 111, forms the first pixel to electrode 121 by evaporation process; Described second pixel electrode 92 limited at third through-hole by evaporation process forms the second organic luminous layer 112, on the second organic luminous layer 112, forms the second pixel to electrode 122 by evaporation process.
Can also be prepared by coating process as the first organic luminous layer 111 and the second organic luminous layer 112 described in other embodiments of the present invention; Described first pixel can also be prepared by sputtering technology electrode 122 electrode 121 and described second pixel, all can realize object of the present invention, belong to protection scope of the present invention.
The preparation method of described a kind of double-side display device, in same pixel cell, prepare two Organic Light Emitting Diodes that exiting surface is contrary, not only preparation technology is simple, and can realize the double-sided display of high pixel resolution and resolution simultaneously, effectively reduce the preparation cost of double-side display device
Computing formula by resolution:
PPI(Pixel per Inch)=1inch
2/pixel area
Known, the double-side display device disclosed in Chinese patent literature CN1832193A, because the pixel of different light emission direction is staggered, therefore, is only 1/2 of number of total picture element amount to the pixel of single direction display under per inch; And a kind of double-side display device of the present invention, under same specification condition, resolution is the twice of the resolution of the double-side display device described in Chinese patent literature CN1832193A, when total light-emitting area is constant, ensure that high resolution, improve the display quality of double-side display device.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (8)
1. a double-side display device, comprise substrate, setting some pixel cells on the substrate, it is characterized in that, described pixel cell comprises the first Organic Light Emitting Diode and second Organic Light Emitting Diode of the setting of same layer, described first Organic Light Emitting Diode comprises the first pixel electrode, the first organic luminous layer and the first pixel to electrode, and described second Organic Light Emitting Diode comprises the second pixel electrode, the second organic luminous layer and the second pixel to electrode; Described first pixel electrode and described second pixel are reflecting electrode to electrode, and described first pixel is transmission electrode to electrode and described second pixel electrode; Described first organic diode is identical with described second Organic Light Emitting Diode chromaticity coordinates.
2. double-side display device according to claim 1, is characterized in that, described pixel cell also comprises thin-film transistor, and described first pixel electrode and described second pixel electrode are electrically connected with the source electrode of same described thin-film transistor or drain respectively.
3. double-side display device according to claim 1, is characterized in that, described first pixel electrode and described second pixel electrode are provided with the pixel confining layers of isolating described first Organic Light Emitting Diode and described second Organic Light Emitting Diode.
4. double-side display device according to claim 1, is characterized in that, described reflecting electrode is stack gradually the ITO layer of setting, Ag layer and ITO layer, or stacks gradually the ITO layer of setting, Al layer and ITO layer.
5. double-side display device according to claim 1, is characterized in that, described transmission electrode is the stacked structure of one or more compositions in ITO layer, IZO layer, AZO layer.
6. according to the arbitrary described double-side display device of claim 1-5, it is characterized in that, described first Organic Light Emitting Diode and described second Organic Light Emitting Diode also independently comprise one or more the combination in electron injecting layer, electron transfer layer, hole blocking layer, electronic barrier layer, hole transmission layer, hole injection layer separately.
7. a preparation method for the double-side display device described in claim 1-6, is characterized in that, comprises the steps:
S1, on substrate, form the drive circuit of each pixel cell;
S2, on drive circuit, form the first pixel electrode and the second pixel electrode, the first pixel electrode and
Two pixel electrodes are electrically connected with drive circuit;
S3, directly on the first pixel electrode and the second pixel electrode, form pixel confining layers, pixel confining layers
In be provided with the second through hole and the third through-hole of exposure first pixel electrode and the second pixel electrode;
S4, second through hole limit described first pixel electrode on form the first organic luminous layer and the first picture
Element, to electrode, described second pixel electrode that third through-hole limits forms the second organic light emission and institute
State the second pixel electrode.
8. the preparation method of double-side display device according to claim 1, is characterized in that, described drive circuit comprises thin-film transistor.
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