CN104752452B - A kind of high-voltage LED preparation method with stereo luminous structure - Google Patents
A kind of high-voltage LED preparation method with stereo luminous structure Download PDFInfo
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Abstract
The present invention discloses a kind of high-voltage LED preparation method with stereo luminous structure, the high-voltage LED made by the method, it is made up of mutually the stagger sub- level Light-Emitting Diode of bonding of at least two-layer, it is bottom that n+1 son of wherein one layer setting is level led, each son of bottom is level led in same plane, it is top layer that n son of another layer of setting is level led, each son of top layer is level led in same plane, and sub level led adjacent with top layer is arranged on two different levels bottom；Each sub- level Light-Emitting Diode has independent ray structure, and each sub- level Light-Emitting Diode is connected in series.The present invention is connected in series each son is level led, constitute three-dimensional at least double-deck ray structure, significantly increase the luminous power of unit area, and cause that the area of the high-voltage chip module of same voltage reduces by about one time, be effectively reduced the packaging cost of high-voltage chip module.
Description
Technical field
The present invention relates to LED technology field, a kind of baroluminescence two with stereo luminous structure is referred in particular to
Pole pipe preparation method.
Background technology
Light emitting diode has low-power consumption, size small and high reliability, is rapidly developed as principal light source.
The utilization field of light emitting diode extends rapidly in recent years, and improve light-emitting diode luminance and reduce light emitting diode into
This turns into the technical goal of LED development.
High-voltage LED（HV-LED）The cost of Light-Emitting Diode more can be significantly reduced, HV-LED has two
Big advantage：One, cost and weight, two for effectively reducing LED illumination lamp are greatly reduced the design requirement to cooling system, solve
The heat dissipation technology obstacle in LED illumination of having determined market.
HV-LED high voltages, low current condition of work have overturned traditional LED low-voltages, high current job requirement.LED illumination
Light fixture due to using HV-LED SOP and reduce heating, fitting structure moulding tend to save heat sink material, more than 270 degree light,
Low cost, light weight etc..HV-LED chipsets high voltage, low current condition of work, work with traditional LED low-voltages, high current
Environment is compared, and heating is substantially reduced when HV-LED works；HV-LED only needs the high-voltage linear constant-current source just to work well, high pressure
Linear constant current power supply transless, no electrolytic capacitor device solve the service life of traditional LED drive power and electrolytic capacitor
Problem.
However, the luminous power of prior art high-voltage LED needs further raising, meanwhile, packaging cost needs
Further reduce, thus this case produces.
The content of the invention
It is an object of the invention to provide a kind of high-voltage LED preparation method with stereo luminous structure, by this
The high-voltage LED that method makes can improve luminous power, while reducing packaging cost.
To reach above-mentioned purpose, solution of the invention is：
A kind of high-voltage LED preparation method with stereo luminous structure, comprises the following steps：
One, cushion, peel ply, the first type conductive layer, active layer are set gradually from the bottom to top in extension substrate top surface
With Second-Type conductive layer；
Two, it is level led to make each son in bottom, and transparent conductive material, formation the are deposited with Second-Type conductive layer surface
Two current expansion conductive layers；
Three, etched using mask, ICP in the second current expansion conductive layer surface, form extension isolation channel, and etch depth
To epitaxial substrate, each independent extension ray structure is formed；
Four, etched using mask, ICP in the second current expansion conductive layer surface, form first electrode and make region, etching
Depth is to the first type conductive layer；
Five, made in the first electrode of the first type conductive layer and first electrode is formed on region, first electrode lights with extension
Across electrode isolation groove between structure；
Six, form second electrode on the second current expansion conductive layer；First electrode and second electrode in same side, and
The surface of first electrode and second electrode is in same level；
Seven, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode dielectric layer,
And the extension isolation channel of the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in bottom is consequently formed without filling
Each son in bottom is level led；
Eight, it is level led that repeat step one to seven makes each son in top；
Nine, of bottom first is level led sub with top first level led to be bonded：The sub- level hair of bottom first
The first electrode of the optical diode second electrode level led with of top first is formed and is conductively connected；The sub- level in bottom first
Second current expansion conductive layer of light emitting diode, the second current expansion conductive layer level led with of top first is adopted
It is bonded with non-conductive bonding material, forms non-conductive bonded layer；
Ten, of top first is level led sub with bottom second level led to be bonded：The sub- level hair of top first
The first electrode of the optical diode second electrode level led with of bottom second is formed and is conductively connected；The sub- level in top first
Second current expansion conductive layer of light emitting diode, the second current expansion conductive layer level led with of bottom second is adopted
It is bonded with non-conductive bonding material, forms non-conductive bonded layer；
11, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second
The first electrode of the light emitting diode second electrode level led with of top second is formed using metal bonding material and connected
Connect；The second level led current expansion conductive layer of of bottom second second electricity level led with of top second
Stream extension conductive layer is bonded using non-conductive bonding material, forms non-conductive bonded layer；The n-th sub- level of top is sequentially connected to light
Diode and of bottom n-th are level led；
12, of top n-th is level led sub with bottom (n+1)th level led to be bonded；The sub- level hair of top n-th
The first electrode of the optical diode second electrode level led with of bottom (n+1)th is formed and is conductively connected；The sub- level in top n-th
Second current expansion conductive layer of light emitting diode, the second current expansion conductive layer level led with of bottom (n+1)th is adopted
It is bonded with non-conductive bonding material, forms non-conductive bonded layer；
13, the level led first electrode of of bottom (n+1)th it is level led with of bottom first second
Electrode is welding stage electrode；
14, peel off the level led epitaxial substrate of each son in removal top；Using backcut technology, in each sub- level in bottom
Cutting splitting in the epitaxial substrate of light emitting diode, forms high-voltage LED.
A kind of high-voltage LED preparation method with stereo luminous structure, comprises the following steps：
One, cushion, etch stop layers are set gradually from the bottom to top in extension substrate top surface, the first type conductive layer, had
Active layer, Second-Type conductive layer；
Two, the making each son in bottom is level led, and dielectric layer is formed in Second-Type conductive layer surface, and in the dielectric layer
Form some through holes, the depth of through hole to Second-Type conductive layer；
Three, in dielectric layer surface evaporation metal, metallic reflector is formed, and metal fills up through hole and forms conductive channel；
Four, metal conducting layer is bonded with substrate using non-conductive bonding material, form non-conductive bonded layer；
Five, erosion removal epitaxial substrate, cushion and etch stop layers expose the first type conductive layer；
Six, transparent conductive material is deposited with the first type conductive layer surface, form the first current expansion conductive layer；
Seven, etched using mask, ICP on the first current expansion conductive layer, make extension isolation channel, and extension isolation channel
Depth forms each independent extension ray structure to non-conductive bonded layer；
Eight, etched using mask, ICP on the first current expansion conductive layer, make, form second electrode and make region,
Etch depth is to dielectric layer surface；
Nine, made in second electrode and second electrode is formed on region, second electrode passes through conductive channel and metallic mirror
Connection is formed, and across electrode isolation groove between second electrode and the side wall of extension ray structure；
Ten, first electrode, and first electrode and second electrode are formed on the first current expansion conductive layer in the same side, and
The surface of first electrode and second electrode is in same level；
11, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode insulation
Layer, and the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in bottom extension isolation channel without filling, formation
Each son in bottom is level led；
12, each son in making top is level led, and transparent conductive material is deposited with Second-Type conductive layer surface, is formed
Second current expansion conductive layer；
13, etched using mask, ICP in the second current expansion conductive layer surface, extension isolation channel is formed, and etching is deep
Degree forms each independent extension ray structure to epitaxial substrate；
14, etched using mask, ICP in the second current expansion conductive layer surface, form first electrode and make region, erosion
Carve depth to the first type conductive layer；
15, made in the first electrode of the first type conductive layer and form first electrode, and first electrode and extension on region
Across electrode isolation groove between the side wall of ray structure；
16, second electrode, and second electrode and first electrode are formed on the second current expansion conductive layer in the same side,
And second electrode and first electrode surface are in same level；
17, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode insulation
Layer, and surrounding's Cutting Road of the level led composition bottom high-pressure module of each son in top extension isolation channel without filling, so far
Form each son in top level led；
18, of bottom first is level led sub with top first level led to be bonded：The sub- level in bottom first
The second electrode of the light emitting diode first electrode level led with of top first is formed and is conductively connected；Of bottom first
The first level led current expansion conductive layer second current expansion conductive layer level led with of top first
It is bonded using non-conductive bonding material, forms non-conductive bonded layer；
19, of top first is level led sub with bottom second level led to be bonded：The sub- level in top first
The second electrode of the light emitting diode first electrode level led with of bottom second is formed and is conductively connected；Of top first
The second level led current expansion conductive layer first current expansion conductive layer level led with of bottom second
It is bonded using non-conductive bonding material, forms non-conductive bonded layer；
20, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second
The second electrode of the light emitting diode first electrode level led with of top second is formed and is conductively connected；Of bottom second
The first level led current expansion conductive layer second current expansion conductive layer level led with of top second
It is bonded using non-conductive bonding material, forms non-conductive bonded layer；It is sequentially connected to the sub level led and bottom in top n-th
N-th son is level led；
21, of top n-th is level led sub with bottom (n+1)th level led to be bonded：The sub- level in top n-th
The second electrode of the light emitting diode first electrode level led with of bottom (n+1)th is formed using metal bonding material and connected
Connect；The second level led current expansion conductive layer of of top n-th first electricity level led with of bottom (n+1)th
Stream extension conductive layer is bonded using non-conductive bonding material, forms non-conductive bonded layer；
22, the level led second electrode of of bottom (n+1)th it is level led with of bottom first the
One electrode is welding stage electrode；
23, the epitaxial substrate of erosion removal top light emitting epitaxial wafer, cushion and etch stop layers respectively expose the
The surface of one type conductive layer；Using backcut technology in the level led epitaxial substrate of each son in bottom cutting splitting, formed
High-voltage LED.
A kind of high-voltage LED preparation method with stereo luminous structure, comprises the following steps：
One, cushion, etch stop layers are set gradually from the bottom to top in extension substrate top surface, the first type conductive layer, had
Active layer, Second-Type conductive layer；
Two, the making each son in bottom is level led, and dielectric layer is formed in Second-Type conductive layer surface, and in the dielectric layer
Form some through holes, the depth of through hole to Second-Type conductive layer；
Three, in dielectric layer surface evaporation metal, metallic reflector is formed, and metal fills up through hole and forms conductive channel；
Four, metal conducting layer is bonded with substrate using non-conductive bonding material, form non-conductive bonded layer；
Five, erosion removal epitaxial substrate, cushion and etch stop layers, expose the first type conductive layer respectively；
Six, transparent conductive material material is deposited with the first type conductive layer surface, form the first current expansion conductive layer；
Seven, etched using mask, ICP on the first current expansion conductive layer, make extension isolation channel, and extension isolation channel
Depth forms each independent extension ray structure to non-conductive bonded layer；
Eight, etched using mask, ICP on the first current expansion conductive layer, make, form second electrode and make region,
Etch depth is to dielectric layer surface；
Nine, made in second electrode and second electrode is formed on region, second electrode passes through conductive channel and metallic mirror
Connection is formed, and across electrode isolation groove between second electrode and the side wall of extension ray structure；Second electrode and the first electric current
Extension conductive layer is in the same side, and second electrode surface and the first current expansion conductive layer are in same level；
Ten, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode dielectric layer,
And the extension isolation channel of the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in bottom is so far formed without filling
Each son in bottom is level led；
11, each son in making top is level led, and current expansion material, shape are deposited with Second-Type conductive layer surface
Into the second current expansion conductive layer；
12, etched using mask, ICP in the second current expansion conductive layer surface, extension isolation channel is formed, and etching is deep
Degree forms each independent extension ray structure to epitaxial substrate；
13, etched using mask, ICP in the second current expansion conductive layer surface, form first electrode and make region, erosion
Carve depth to the first type conductive layer；
14, made in the first electrode of the first type conductive layer and form first electrode, and first electrode and extension on region
Across electrode isolation groove between the side wall of ray structure；First electrode and the second current expansion conductive layer in the same side, and first
Electrode surface and the second current expansion conductive layer surface are in same level；
15, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode insulation
Layer, and surrounding's Cutting Road of the level led composition bottom high-pressure module of each son in top extension isolation channel without filling, so far
Form each son in top level led；
16, of bottom first is level led sub with top first level led to be bonded：The sub- level in bottom first
First current expansion conductive layer surface zone line of light emitting diode, second electric current level led with of top first
Extension conductive layer surface zone line bonds together to form conductive bond layer using conductive bonding material；The sub grade light-emitting diodes in bottom first
Remaining region of first current expansion conductive layer of pipe second current expansion conductive layer level led with of top first
Remaining region be bonded using non-conductive bonding material, form non-conductive bonded layer；Non-conductive key is wrapped up around conductive bond layer
Layer is closed, and thickness is identical；
17, of top first is level led sub with bottom second level led to be bonded：The sub- level in top first
The first electrode of the light emitting diode second electrode level led with of bottom second is formed and is conductively connected；
18, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second
First current expansion conductive layer surface zone line of light emitting diode, second electric current level led with of top second
Extension conductive layer surface zone line is bonded using conductive bonding material, forms conductive bond layer；The sub- level in bottom second luminous two
Remaining region of first current expansion conductive layer of pole pipe second current expansion level led with of top second is conductive
Remaining region of layer is bonded using non-conductive bonding material, forms non-conductive bonded layer；Wrap up non-conductive around conductive bond layer
Bonded layer, and thickness is identical；It is sequentially connected to of top n-th level led level led with of bottom n-th；
19, of top n-th is level led sub with bottom (n+1)th level led to be bonded：The sub- level hair of top n-th
The first electrode of the optical diode second electrode level led with of bottom (n+1)th is formed and is conductively connected；
20, the level led first electrode of of bottom (n+1)th it is level led with of bottom first second
Electrode is welding stage electrode；
21, the epitaxial substrate of erosion removal top light emitting epitaxial structure, cushion and etch stop layers, expose respectively
The surface of the first type conductive layer；Using backcut technology in the cutting splitting in the level led epitaxial substrate of each son in bottom,
Form high-voltage LED.
A kind of high-voltage LED with stereo luminous structure, is lighted by mutually the stagger sub- level of bonding of at least two-layer
Diode is constituted, wherein it is bottom that n+1 son of one layer of setting is level led, each son of bottom is level led in same
Plane, it is top layer that n son of another layer of setting is level led, and each son of top layer is level led in same plane, bottom
It is adjacent with top layer level led to be arranged on two different levels；Each sub- level Light-Emitting Diode has independent luminous
Structure, each sub- level Light-Emitting Diode is connected in series；
Each son is level led comprising independent extension ray structure, and each independent extension ray structure passes through extension insulating barrier
Separate；Extension ray structure includes active layer, and the first type conductive layer is set on the contact surface of active layer first, and active layer second is contacted
Second-Type conductive layer is set on face；
Each son in bottom is level led in the first type conductive layer is set on substrate, and the first electricity is set on the first type conductive layer
Pole, sets the second current expansion conductive layer on Second-Type conductive layer, second electrode, first are set on the second current expansion conductive layer
Electrode and second electrode are in the same side；
First electrode is set on the first level led type conductive layer of each son in top, is set on Second-Type conductive layer
Two current expansion conductive layers, set second electrode on the second current expansion conductive layer, first electrode and second electrode are in the same side；
Set non-between adjacent contact surface between the level led son each with bottom of each son in top is level led
Conductive bond layer；
The level led first electrode of of the bottom first second electrode shape level led with of top first
Into being conductively connected；
The level led first electrode of of the top first second electrode shape level led with of bottom second
Into being conductively connected；The level led first electrode of of bottom second second electrode level led with of top second
Formation is conductively connected；It is sequentially connected up to top, of bottom n-th are level led；
The level led first electrode of of the top n-th second electrode shape level led with of bottom (n+1)th
Into being conductively connected；The level led first electrode of of bottom (n+1)th second electricity level led with of bottom first
Extremely welding stage electrode.
A kind of high-voltage LED with stereo luminous structure, is lighted by mutually the stagger sub- level of bonding of at least two-layer
Diode is constituted, wherein it is bottom that n+1 son of one layer of setting is level led, each son of bottom is level led in same
Plane, it is top layer that n son of another layer of setting is level led, and each son of top layer is level led in same plane, bottom
It is adjacent with top layer level led to be arranged on two different levels；Each sub- level Light-Emitting Diode has independent luminous
Structure, each sub- level Light-Emitting Diode is connected in series；
Each son is level led comprising independent extension ray structure, and each independent extension ray structure passes through extension insulating barrier
Separate；Extension ray structure includes active layer, and the first type conductive layer is set on the contact surface of active layer first, and active layer second is contacted
Second-Type conductive layer is set on face；
Each son in bottom is level led in the first current expansion conductive layer is set on the first type conductive layer, and the first electric current expands
First electrode is set on exhibition conductive layer, dielectric layer is set on Second-Type conductive layer, conductive channel, dielectric layer are provided with inside dielectric layer
Upper setting metal reflective layer, metallic reflector forms Ohmic contact, metallic reflector by conductive channel with Second-Type conductive layer
It is upper that non-conductive bonded layer is set, substrate is set on non-conductive bonded layer, second electrode is provided with dielectric layer, second electrode passes through
Conductive channel is formed with metallic reflector and is connected, exhausted across electrode between the sidewall contact face of second electrode and extension ray structure
Edge layer, and with first electrode the same side；
Second current expansion conductive layer is set on the level led Second-Type conductive layer of each son in top, and the second electric current expands
Second electrode is set on exhibition conductive layer, the side of first electrode, first electrode and extension ray structure is set on the first type conductive layer
Across electrode dielectric layer between wall contact surface, and with second electrode the same side；
Set non-between adjacent contact surface between the level led son each with bottom of each son in top is level led
Conductive bond layer, the first contact surface and the second level led current expansion conductive layer of each son in top of non-conductive bonded layer
Contact, the second contact surface and the first level led current expansion conductive layers make contact of each son in bottom of non-conductive bonded layer；
The level led second electrode of of the bottom first first electrode shape level led with of top first
Into being conductively connected；The level led second electrode of of top first first electrode level led with of bottom second
Formation is conductively connected；The level led second electrode of of bottom second electrode level led with of top second
Formation is conductively connected；It is sequentially connected up to bottom, of top n-th are level led；
The level led second electrode of of the top n-th first electrode shape level led with of bottom (n+1)th
Into being conductively connected；
The level led second electrode of of bottom (n+1)th is with the sub level led first electrode in bottom first
Welding stage electrode.
A kind of high-voltage LED with stereo luminous structure, is lighted by mutually the stagger sub- level of bonding of at least two-layer
Diode is constituted, wherein it is bottom that n+1 son of one layer of setting is level led, each son of bottom is level led in same
Plane, it is top layer that n son of another layer of setting is level led, and each son of top layer is level led in same plane, bottom
It is adjacent with top layer level led to be arranged on two different levels；Each sub- level Light-Emitting Diode has independent luminous
Structure, each sub- level Light-Emitting Diode is connected in series；
Each son is level led comprising independent extension ray structure, and each independent extension ray structure passes through extension insulating barrier
Separate；Extension ray structure includes active layer, and the first type conductive layer is set on the contact surface of active layer first, and active layer second is contacted
Second-Type conductive layer is set on face；
Each son in bottom is level led in the first current expansion conductive layer is set on the first type conductive layer, and Second-Type is conductive
Dielectric layer is set on layer, conductive channel is provided with inside dielectric layer, metal reflective layer is set on dielectric layer, metallic reflector is by leading
Electric channel forms Ohmic contact with Second-Type conductive layer, non-conductive bonded layer is set on metallic reflector, on non-conductive bonded layer
Substrate is set, second electrode is provided with dielectric layer, second electrode is formed with metallic reflector by conductive channel and is connected, second
Across electrode dielectric layer between electrode and the sidewall contact face of extension ray structure, and electrode surface and the first current expansion are conductive
Layer the same side；
Second current expansion conductive layer is set on the level led Second-Type conductive layer of each son in top, and the first type is conductive
First electrode is set on layer, across electrode dielectric layer, and electrode between first electrode and the sidewall contact face of extension ray structure
Surface and second current expansion conductive layer the same side；
Centre between the level led son each with bottom of each son in top is level led between adjacent contact surface
Region sets conductive bond layer, first contact surface and the second level led current expansion of each son in top of conductive bond layer
Conductive layers make contact, the first current expansion conductive layer that the second contact surface each with bottom of conductive bond layer is level led connects
Touch；
Between the level led son each with bottom of each son in top is level led in removing between adjacent contact surface
Between remaining region outside region and electrode zone non-conductive bonded layer, the first contact surface of non-conductive bonded layer and top are set
The second level led current expansion conductive layers make contact of each son, the second contact surface and each sub- level in bottom of non-conductive bonded layer
First current expansion conductive layers make contact of light emitting diode, non-conductive bonded layer is in same level with conductive bond layer；
The first level led current expansion conductive layer of of bottom first is level led with of top first
Second current expansion conductive layer forms connection by conductive bond layer；The level led first electrode of of top first and bottom
The level led second electrode of of portion second is formed and is conductively connected；The first level led electric current of of bottom second expands
The exhibition conductive layer second current expansion conductive layer level led with of top second is formed by conductive bond layer and is connected；According to
Secondary connection is level led up to bottom, of top n-th；
The level led first electrode of of the top n-th second electrode shape level led with of bottom (n+1)th
Into being conductively connected；
Remaining contact surface between each son is level led forms insulation by non-conductive bonded layer；
First electrode, of bottom (n+1)th are set on the first level led current expansion conductive layer of of bottom (n+1)th
The level led first electrode second electrode level led with of bottom first is welding stage electrode.
Further, the span 1-110 of light emitting diode series connection number n, and n is integer.Using series connection number according to
Depending on concrete application demand.It is 220V to use the direct insertion design voltage for being applied to ordinarily resident's illumination, reduces attached drop
Voltage device and circuit, can effectively reduce the cost of manufacture of encapsulation and application end.
Further, each son in top is level led and thickness of non-conductive bonded layer between each son in bottom is level led
Degree D=(2n+1) λ/4, wherein n is integer, and λ is emission wavelength.Non-conductive bonded layer is designed using anti-reflection thickness, can be reduced
Light is propagated and produces full transmitting in top, Di Gezi level led bonded interface, improves the pressure high of stereo luminous structure
The extraction yield of the light of optical diode.
Further, constitute the level led active layer material of each son including GaN, GaInN, AlGaN, AlGaInN,
AlN, AlGaInP, GaInP, GaAs, AlGaAs, GaInAs, AlGaInAs, GaInAsP III-V compound；Electric current is constituted to expand
The material for opening up conductive layer includes tin indium oxide（ITO）, ZnO, Graphene.
Further, each son in top is level led lights with the level led neighbouring each sub- level of each son in bottom
Diode forms four extension insulating barriers being parallel to each other two-by-two, and the parallel extension insulating barrier of two of which is weighed in vertical direction
Close, another two parallel extension insulating barriers mutually stagger so that the cutting technique of high-pressure modular is simpler, and improve yield rate.
After such scheme, the present invention make high-voltage LED by least double-layer structure each independent light-emitting junction
The sub- level Light-Emitting Diode of structure mutually staggers bonding, is connected in series each son is level led, constitutes three-dimensional at least double-deck
Ray structure, it will be apparent that increase the luminous power of unit area, and cause that the area of the high-voltage chip module of same voltage reduces
By about one time, it is effectively reduced the packaging cost of high-voltage chip module.
Brief description of the drawings
Fig. 1 is the epitaxial structure schematic diagram of the embodiment of the present invention one；
Fig. 2 for the embodiment of the present invention one each son it is level led between isolation channel schematic diagram；
Fig. 3 is each sub level led electrode zone schematic diagram of the embodiment of the present invention one；
Fig. 4 is for the level led evaporation first electrode of each son of the embodiment of the present invention one, second electrode and makes extension
Insulating barrier schematic diagram；
Fig. 5 is the level led evaporation first electrode of each son in bottom of the embodiment of the present invention one, second electrode and making
The floor map of extension insulating barrier；
Fig. 6 is the level led evaporation first electrode of each son in top of the embodiment of the present invention one, second electrode and making
The floor map of extension insulating barrier；
Fig. 7 for the embodiment of the present invention one each son in bottom it is level led it is each with top it is sub it is level led be bonded after
Structural representation；
Fig. 8 shows for the structure of the high pressure light-emitting diode chip module obtained after the removal epitaxial substrate of the embodiment of the present invention one
It is intended to；
Fig. 9 is the epitaxial structure schematic diagram of the embodiment of the present invention two；
Figure 10 is bonded in the structural representation after substrate for the bottom LED of the embodiment of the present invention two；
Figure 11 is that the structure after the bottom LED peeling liner bottom of the embodiment of the present invention two and removal etch stop layers is shown
It is intended to；
Figure 12 is the structural representation after the bottom LED of the embodiment of the present invention two is deposited with the first current expansion conductive layer
Figure；
Figure 13 for each son of the bottom LED of the embodiment of the present invention two it is level led between extension isolation channel
Schematic diagram；
Figure 14 is each sub level led electrode zone schematic diagram of the bottom LED of the embodiment of the present invention two；
Figure 15 is the level led chip structure schematic diagram of each son of the bottom LED of the embodiment of the present invention two；
Figure 16 is the bottom LED of the embodiment of the present invention two in evaporation first electrode, second electrode and making extension
The floor map of insulating barrier；
Figure 17 is the schematic diagram of extension isolation channel between the top LED of the embodiment of the present invention two；
Figure 18 is the top LED electrode zone schematic diagram of the embodiment of the present invention two；
Figure 19 is exhausted for the top LED of the embodiment of the present invention two is deposited with first electrode, second electrode and making extension
The chip structure schematic diagram of edge layer；
Figure 20 is exhausted for the top LED of the embodiment of the present invention two is deposited with first electrode, second electrode and making extension
The floor map of edge layer；
After Figure 21 is bonded for each sub- light emitting diode in the bottom sub- light emitting diode each with top of the embodiment of the present invention two
Structural representation；
Figure 22 is the structure that the embodiment of the present invention two peels off the high pressure light-emitting diode chip module obtained after epitaxial substrate
Schematic diagram.
Specific embodiment
The present invention is described in detail below in conjunction with drawings and the specific embodiments.
Embodiment one
A kind of high-voltage LED with stereo luminous structure, the sub- level by seven with independent ray structure lights
Diode series are formed, and each son of series connection is level led to be divided into two-layer, and bottom is by four bottom level led structures of son
Into top layer is constituted by son is level led at the top of three, as shown in Figure 8.
Wherein each height is level led all to include independent active layer 4, and first is set on the contact surface of active layer 4 first
Type conductive layer 3, sets Second-Type conductive layer 5 on the contact surface of active layer 4 second.First type conductive layer 3 is by the GaN that is adulterated with Si
III-V compound is constituted, and thickness is 2 μm.Active layer 4 builds the structure for intersecting growth using 6 pairs of SQWs and quantum.Wherein
Quantum is built and is made up of GaN III-V compounds, and thickness is 10nm.SQW is made up of GaInN III-V compounds, and thickness is
3nm.The GaN III-V compounds that Second-Type conductive layer 5 is adulterated using Mg, thickness is 300nm.
Of bottom first, second, third and fourth is level led in the first type conductive layer 3 is set on substrate, and substrate includes extension
Substrate 1 and the cushion 2 being arranged on, set first electrode on the first type conductive layer 3, is set on Second-Type conductive layer 5
Two current expansion conductive layers 6, set second electrode on the second current expansion conductive layer 6, first electrode 8 and second electrode are same
Side.The deposition material of current expansion conductive layer uses ITO, as ITO conductive layer.
First electrode 8 is set on the first level led type conductive layer 3 of of top first, second and third, Second-Type is conductive
Second current expansion conductive layer 6 is set on layer 5, second electrode 10, the He of first electrode 8 are set on second current expansion conductive layer 6
Second electrode 10 is in the same side.The deposition material of current expansion conductive layer uses ITO, as ITO conductive layer.
Of top first it is level led it is sub with bottom first and second it is level led between adjacent contact surface
Non-conductive bonded layer is set；Of top second it is level led with bottom second and third it is sub it is level led between it is adjacent
Non-conductive bonded layer is set between contact surface；Level led third and fourth son with bottom of son of top the 3rd is level led
Between non-conductive bonded layer is set between adjacent contact surface.First contact surface of non-conductive bonded layer and top first, second and third
Level led the second current expansion conductive layer 6 of son is contacted, the second contact surface of non-conductive bonded layer and bottom first,
2nd, the second level led current expansion conductive layer 6 of three, four sons is contacted.
The level led first electrode 8 of of bottom first second electrode 10 level led with of top first
Form metal connection.
The level led first electrode 8 of of top first second electrode 10 level led with of bottom second
Form metal connection.
The level led first electrode 8 of of bottom second second electrode 10 level led with of top second
Form metal connection.Mode is sequentially connected up to top, of bottom the 3rd are level led.
The level led first electrode 8 of of top the 3rd second electrode 10 level led with of bottom the 4th
Form metal connection.
The level led first electrode 8 of of bottom the 4th second electrode 10 level led with of bottom first
It is welding stage electrode.
A kind of high-voltage LED preparation method with stereo luminous structure, comprises the following steps：
One, as shown in figure 1, in the upper surface of epitaxial substrate 1 epitaxial buffer layer 2, the first type conductive layer successively from the bottom to top
3rd, active layer 4 and Second-Type conductive layer 5.
Specially epitaxial substrate 1 uses 4 inches of sapphire, and thickness is 400 μm.Cushion 2 uses undoped GaN tri-
Five compounds of group, thickness is 2 μm.
Two, the making each son in bottom is level led, and ITO materials are deposited with the surface of Second-Type conductive layer 5, forms the second electricity
Stream extension conductive layer 6.
Three, as shown in Fig. 2 being etched using mask, ICP on the surface of the second current expansion conductive layer 6, form extension isolation channel
7, extension isolation channel 7 is 20 μm in the width of the level led cutting edge of each son, and extension isolation channel 7 is in each sub- level luminous two
The width of the non-cutting edge of pole pipe is 4 μm, and etch depth is to epitaxial substrate 1, forms the only of tens of thousands of 10mil*10mil sizes
Vertical extension ray structure.
Four, as shown in figure 3, being etched using mask, ICP on the surface of the second current expansion conductive layer 6, form first electrode system
Make region, etch depth to the first type conductive layer 3.
Five, made in the first electrode of the first type conductive layer 3 and first electrode 8, first electrode 8 and outer delayed action are formed on region
Across electrode isolation groove between photo structure, as shown in Figure 4.
Six, second electrode 10 is formed on the second current expansion conductive layer 6；First electrode 8 is with second electrode 10 same
Side and surface is in same level.
Seven, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier 11 and electrode dielectric layer
9, and each son in bottom it is level led constitute bottom high-pressure module surrounding's Cutting Road 12 extension isolation channel without filling；Thus
Form each son in bottom level led, as shown in Figure 4 and Figure 5.
Eight, each sub level led making step each with bottom in top is level led almost identical, except step
Rapid four increase：Sub level led, the 3rd sub level led electrode empty station 13 in top first is formed simultaneously.But with bottom
The chip size and electrode domain of each sub level led use are different, as shown in fig. 6, forming tens of thousands of 10mil*
The cycle of 15mil/10mil*10mil/10mil*15mil sizes alternate independent extension ray structure.Bottom, each sub- level in top light
Diode uses different design layouts, under conditions of being conducive to the level led formation of each son to connect, two-layer light-emitting diodes
Pipe is identical on light-emitting area and spatially overlaps.
Nine, of bottom first is level led sub with top first level led to be bonded：The sub- level hair of bottom first
The first electrode 8 of the optical diode second electrode 10 level led with of top first is formed using metal bonding material and connected
Connect；The second level led current expansion conductive layer 6 of of bottom first it is level led with of top first second
Current expansion conductive layer 6 is bonded using non-conductive bonding material, forms non-conductive bonded layer 14.
Ten, of top first is level led sub with bottom second level led to be bonded：The sub- level hair of top first
The first electrode 8 of the optical diode second electrode 10 level led with of bottom second is formed using metal bonding material and connected
Connect；The second level led current expansion conductive layer 6 of of top first it is level led with of bottom second second
Current expansion conductive layer 6 is bonded using non-conductive bonding material, forms non-conductive bonded layer 14.
11, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second
The first electrode 8 of the light emitting diode second electrode 10 level led with of top second is formed using metal bonding material
Connection；The second level led current expansion conductive layer 6 of of bottom second it is level led with of top second the
Two current expansion conductive layer 6 is bonded using non-conductive bonding material, forms non-conductive bonded layer 14.It is sequentially connected mode to top
3rd son is level led and of bottom the 3rd is level led.
12, of top the 3rd is level led sub with bottom the 4th level led to be bonded；The sub- level in top the 3rd
The first electrode 8 of the light emitting diode second electrode 10 level led with of bottom the 4th is formed using metal bonding material
Connection；The second level led current expansion conductive layer 6 of of top the 3rd it is level led with of bottom the 4th the
Two current expansion conductive layer 6 is bonded using non-conductive bonding material, forms non-conductive bonded layer 14.
13, the level led first electrode 8 of of bottom the 4th it is level led with of bottom first second
Electrode 10 is welding stage electrode, as shown in Figure 7.
14, using each level led total sapphire epitaxial substrate 1 of son in laser lift-off technique removal top, steam
Plating silicon nitride material protects epitaxial structure as PV protective layers 15, as shown in Figure 8.Using backcut technology, cut in epitaxial substrate 1
Piece is isolated, high-voltage LED is formed.
Embodiment two
A kind of high-voltage LED with stereo luminous structure, the sub- level by nine with independent ray structure lights
Diode series are formed, and each son of series connection is level led to be divided into two-layer, and bottom is by five bottom level led structures of son
Into top layer is constituted by son is level led at the top of four, as shown in figure 22.
Wherein each height is level led all to include independent active layer 4, and first is set on the contact surface of active layer 4 first
Type conductive layer 3, sets Second-Type conductive layer 5 on the contact surface of active layer 4 second.First type conductive layer 3 is by the first type current expansion
Layer, the first type limiting layer composition.Specially the first type current extending is by (Al0.4Ga0.6)0.5In0.5P III-V compound structures
Into, and thickness is 5 μm.First type limiting layer is by (Al0.9Ga0.1)0.5In0.5P III-Vs compound is constituted, and thickness is 600nm.
Active layer 4 is by 18 groups of (Al0.9Ga0.1)0.5In0.5P/Ga0.5In0.5P III-Vs compound is alternately constituted.Second-Type conductive layer 5 by
Second-Type limiting layer, Second-Type current extending composition.Second-Type limiting layer is by (Al0.9Ga0.1)0.5In0.5P III-V compounds
Constitute, and thickness is 600nm.Second-Type current extending is made up of GaP III-V compounds, and thickness is 4 μm.Current expansion
The deposition material of layer uses ITO, as ITO conductive layer.
Each son in bottom is level led in the first current expansion conductive layer 31 is set on the first type conductive layer 3, and first is electric
First electrode 8 is set on stream extension conductive layer 31, SiO is provided with Second-Type conductive layer 52Dielectric layer 51, SiO2In dielectric layer 51
Portion is provided with conductive channel, SiO2Metal reflective layer 52 is set on dielectric layer 51, and metallic reflector 52 passes through conductive channel and second
Type conductive layer 5 forms Ohmic contact, and non-conductive bonded layer 53 is set on metallic reflector 52, and base is set on non-conductive bonded layer 53
Plate 54, SiO2Second electrode 10 is provided with dielectric layer 51, second electrode 10 is formed by conductive channel with metallic reflector 52
Connection, it is across electrode dielectric layer 9 between second electrode 10 and the sidewall contact face of extension ray structure and same with first electrode 8
Side.
The second current expansion conductive layer 6, the second electric current are set on the level led Second-Type conductive layer 5 of each son in top
Second electrode 10 is set on extension conductive layer 6, first electrode 8 is set on first type conductive layer 3, first electrode 8 lights with extension
Across electrode dielectric layer 9 between the sidewall contact face of structure, and with the same side of second electrode 10.
Set non-between adjacent contact surface between the level led son each with bottom of each son in top is level led
Conductive bond layer 14, the second current expansion that the first contact surface each with top of non-conductive bonded layer 14 is level led is led
Electric layer 6 is contacted, and the first current expansion that the second contact surface of non-conductive bonded layer 14 is level led with each son in bottom is conductive
Layer 31 is contacted.
The level led second electrode 10 of of bottom first first electrode 8 level led with of top first
Form metal connection.
The level led second electrode 10 of of top first first electrode 8 level led with of bottom second
Form metal connection.
The level led second electrode 10 of of bottom second electrode 8 shape level led with of top second
Into metal connection.It is sequentially connected mode level led to bottom, of top the 4th.
The level led second electrode 10 of of top the 4th first electrode 8 level led with of bottom the 5th
Form metal connection.
The level led second electrode 10 of of bottom the 5th first electrode 8 level led with of bottom first
It is welding stage electrode.
A kind of high-voltage LED preparation method with stereo luminous structure, comprises the following steps：
One, as shown in figure 9, the upper surface of epitaxial substrate 1 from the bottom to top successively epitaxial buffer layer 2, etch stop layers 31,
First type conductive layer 3, active layer 4, Second-Type conductive layer 5.
Specially epitaxial substrate 1 uses 2 inches of GaAs substrates, and thickness is 270 μm.Cushion 2 by 300nm GaAs materials
Material composition.Etch stop layers 31 are by 400nm thick (Al0.8Ga0.2)0.5In0.5P materials are constituted.
Two, the making each son in bottom is level led, dielectric layer 51 is formed on the surface of Second-Type conductive layer 5, in dielectric layer
It is 150/mm that density is formed in 512, a diameter of 7 μm of circular dielectric layer through hole；The depth of through hole is to Second-Type conductive layer
5。
Three, in the surface evaporation metal of dielectric layer 5, metallic reflector 52 is formed, and metal fills up through hole and forms conductive channel
511。
Four, metallic reflector 52 is bonded with substrate 54 using non-conductive bonding material, non-conductive bonded layer 53 is formed, such as
Shown in Figure 10.
Five, erosion removal epitaxial substrate 1, cushion 2 and etch stop layers 31, expose the first type conductive layer 3 respectively, such as scheme
Shown in 11.
Six, ITO materials are deposited with the surface of the first type conductive layer 3 of bottom-emission epitaxial wafer, form the first current expansion and lead
Electric layer 32, as shown in figure 12.
Seven, as shown in Figure 13 and Figure 16, etched using mask, ICP in the first current expansion conductive layer 32, in each of series connection
Son is level led to form the extension isolation channel 7 that width is 5 μm, is in the level led width that formed of each son of non-series connection
18 μm of Cutting Roads 12, and etch depth is to non-conductive bonded layer 53, forms tens of thousands of the independent outer of 10mil*10mil sizes and delays
Photo structure.
Eight, etched using mask, ICP on the first current expansion conductive layer 32, make, form second electrode and make area
Domain, etch depth to the surface of dielectric layer 51, as shown in figure 14.
Nine, made in second electrode and second electrode 10 is formed on region, second electrode 10 passes through conductive channel 511 and metal
Speculum 52 forms connection, and across electrode isolation groove between second electrode 10 and the side wall of extension ray structure.
Ten, on the first current expansion conductive layer 32 formed first electrode 8, and first electrode 8 with second electrode 10 same
Side, and electrode surface is in same level.
11, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier 11 and electrode insulation
Layer 9, extension insulating barrier 11 and each son of electrode dielectric layer 9 and bottom level led compositions cut around bottom high-pressure module
The extension isolation channel in road is without filling；So far the level led making of each son in bottom is completed, as shown in Figure 15 and Figure 16.
12, each son in making top is level led, and ITO materials are deposited with the surface of Second-Type conductive layer 5, forms second
Current expansion conductive layer 6.
13, etched using mask, ICP on the surface of the second current expansion conductive layer 6, in each sub- level light-emitting diodes of series connection
Pipe forms the extension isolation channel 7 that width is 5 μm, is 18 μm of Cutting Roads in the level led width that formed of each son of non-series connection
12, and etch depth is to epitaxial substrate 1, form the tens of thousands of independent extension ray structures of 10mil*10mil sizes, such as Figure 17 and
Shown in Figure 20.
14, etched using mask, ICP on the surface of the second current expansion conductive layer 6, form first electrode and make region,
Etch depth to the first type conductive layer 3, as shown in figure 18.
15, the first type conductive layer 3 first electrode make region on formed first electrode 8, and first electrode 8 with it is outer
Across electrode isolation groove between the side wall of delayed action photo structure.
16, second electrode 10 is formed on the second current expansion conductive layer 6, and second electrode 10 exists with first electrode 8
The same side, and electrode surface is in same level.
17, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier 11 and electrode insulation
Layer 9, and each son in top it is level led composition bottom high-pressure module surrounding's Cutting Road 12 extension isolation channel without filling；Extremely
This completes the level led making of each son in top, as illustrated in figures 19 and 20.
18, the level led son each with top of each son in bottom is level led to be bonded together and its company of series connection
The making for connecing, as shown in figure 21.Of bottom first is level led sub with top first level led to be bonded：Bottom
The level led second electrode 10 of the one son first electrode 8 level led with of top first uses metal bonding material
Material forms connection；The first level led current expansion conductive layer 32 of of bottom first and the sub grade light-emitting diodes in top first
The second current expansion conductive layer 6 of pipe is bonded using non-conductive bonding material, forms compound non-conductive bonded layer 14.
19, of top first is level led sub with bottom second level led to be bonded：The sub- level in top first
The second electrode 10 of the light emitting diode first electrode 8 level led with of bottom second is formed using metal bonding material
Connection；The second level led current expansion conductive layer 6 of of top first it is level led with of bottom second the
One current expansion conductive layer 32 is bonded using non-conductive bonding material, forms compound non-conductive bonded layer 14.
20, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second
The second electrode 10 of the light emitting diode first electrode 8 level led with of top second is formed using metal bonding material
Connection；The first level led current expansion conductive layer 32 of of bottom second it is level led with of top second the
Two current expansion conductive layer 6 is bonded using non-conductive bonding material, forms compound non-conductive bonded layer 14.It is sequentially connected mode extremely
Of top the 4th is level led and of bottom the 4th is level led.
21, of top the 4th is level led sub with bottom the 5th level led to be bonded：Of top the 4th
Level led second electrode 10 first electrode 8 level led with of bottom the 5th uses metal bonding material shape
Into connection；The second level led current expansion conductive layer 6 of of top the 4th is level led with of bottom the 5th
First current expansion conductive layer 32 is bonded using non-conductive bonding material, forms compound non-conductive bonded layer 14.
22, the level led second electrode 10 of of bottom the 5th is the second welding stage electrode, the sub- level in bottom first
The first electrode 8 of light emitting diode is the first welding stage electrode.
23, the epitaxial substrate 1 of erosion removal top light emitting epitaxial wafer, cushion 2 and etch stop layers 31, reveal respectively
Go out the surface of the first type conductive layer 3.
24, region and epitaxial structure side the evaporation silicon nitride in epitaxial surface in addition to welding stage electrode zone are formed
PV protective layers 15；Using backcut technology cutting splitting on the substrate 54, high-voltage LED is formed, as shown in figure 22.
Claims (7)
1. a kind of high-voltage LED preparation method with stereo luminous structure, it is characterised in that：Comprise the following steps：
One, cushion, peel ply, the first type conductive layer, active layer and are set gradually from the bottom to top in extension substrate top surface
Two type conductive layers；
Two, the making each son in bottom is level led, and transparent conductive material is deposited with Second-Type conductive layer surface, forms the second electricity
Stream extension conductive layer；
Three, etched using mask, ICP in the second current expansion conductive layer surface, extension isolation channel, and etch depth are formed to outer
Prolong substrate, form each independent extension ray structure；
Four, etched using mask, ICP in the second current expansion conductive layer surface, form first electrode and make region, etch depth
To the first type conductive layer；
Five, made in the first electrode of the first type conductive layer and first electrode, first electrode and extension ray structure are formed on region
Between across electrode isolation groove；
Six, form second electrode on the second current expansion conductive layer；First electrode and second electrode in same side, and first
The surface of electrode and second electrode is in same level；
Seven, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode dielectric layer, and bottom
The extension isolation channel of the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in portion is consequently formed bottom without filling
Each son is level led；
Eight, it is level led that repeat step one to seven makes each son in top；
Nine, of bottom first is level led sub with top first level led to be bonded：The sub- level in bottom first luminous two
The first electrode of the pole pipe second electrode level led with of top first is formed and is conductively connected；The sub- level in bottom first lights
Second current expansion conductive layer of diode, the second current expansion conductive layer level led with of top first is using non-
Conductive bonding material is bonded, and forms non-conductive bonded layer；
Ten, of top first is level led sub with bottom second level led to be bonded：The sub- level in top first luminous two
The first electrode of the pole pipe second electrode level led with of bottom second is formed and is conductively connected；The sub- level in top first lights
Second current expansion conductive layer of diode, the second current expansion conductive layer level led with of bottom second is using non-
Conductive bonding material is bonded, and forms non-conductive bonded layer；
11, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second lights
The first electrode of the diode second electrode level led with of top second is formed using metal bonding material and is connected；Bottom
The second level led current expansion conductive layer of of portion second second electric current level led with of top second expands
Exhibition conductive layer is bonded using non-conductive bonding material, forms non-conductive bonded layer；It is sequentially connected to the sub grade light-emitting diodes in top n-th
Pipe and of bottom n-th are level led；
12, of top n-th is level led sub with bottom (n+1)th level led to be bonded；The sub- level in top n-th luminous two
The first electrode of the pole pipe second electrode level led with of bottom (n+1)th is formed and is conductively connected；The sub- level in top n-th lights
Second current expansion conductive layer of diode, the second current expansion conductive layer level led with of bottom (n+1)th is using non-
Conductive bonding material is bonded, and forms non-conductive bonded layer；
13, the level led first electrode of of bottom (n+1)th second electrode level led with of bottom first
It is welding stage electrode；
14, peel off the level led epitaxial substrate of each son in removal top；Using backcut technology, in bottom, each sub- level lights
Cutting splitting in the epitaxial substrate of diode, forms high-voltage LED.
2. a kind of high-voltage LED preparation method with stereo luminous structure, it is characterised in that：Comprise the following steps：
One, extension substrate top surface set gradually from the bottom to top cushion, etch stop layers, the first type conductive layer, active layer,
Second-Type conductive layer；
Two, the making each son in bottom is level led, forms dielectric layer in Second-Type conductive layer surface, and formed in the dielectric layer
Some through holes, the depth of through hole to Second-Type conductive layer；
Three, in dielectric layer surface evaporation metal, metallic reflector is formed, and metal fills up through hole and forms conductive channel；
Four, metal conducting layer is bonded with substrate using non-conductive bonding material, form non-conductive bonded layer；
Five, erosion removal epitaxial substrate, cushion and etch stop layers expose the first type conductive layer；
Six, transparent conductive material is deposited with the first type conductive layer surface, form the first current expansion conductive layer；
Seven, etched using mask, ICP on the first current expansion conductive layer, make extension isolation channel, and extension isolation groove depth
To non-conductive bonded layer, each independent extension ray structure is formed；
Eight, etched using mask, ICP on the first current expansion conductive layer, make, form second electrode and make region, etching
Depth is to dielectric layer surface；
Nine, made in second electrode and form second electrode on region, second electrode is formed by conductive channel with metallic mirror
Connection, and across electrode isolation groove between second electrode and the side wall of extension ray structure；
Ten, first electrode, and first electrode and second electrode are formed on the first current expansion conductive layer in the same side, and first
The surface of electrode and second electrode is in same level；
11, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode dielectric layer, and
The extension isolation channel of the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in bottom forms bottom each without filling
Son is level led；
12, each son in making top is level led, and transparent conductive material is deposited with Second-Type conductive layer surface, forms second
Current expansion conductive layer；
13, etched using mask, ICP in the second current expansion conductive layer surface, extension isolation channel is formed, and etch depth is extremely
Epitaxial substrate, forms each independent extension ray structure；
14, etched using mask, ICP in the second current expansion conductive layer surface, form first electrode and make region, etching is deep
Spend to the first type conductive layer；
15, made in the first electrode of the first type conductive layer and first electrode is formed on region, and first electrode lights with extension
Across electrode isolation groove between the side wall of structure；
16, second electrode, and second electrode and first electrode are formed on the second current expansion conductive layer in the same side, and the
Two electrodes are with first electrode surface in same level；
17, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode dielectric layer, and
The extension isolation channel of the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in top so far forms top without filling
Each son in portion is level led；
18, of bottom first is level led sub with top first level led to be bonded：The sub- level in bottom first lights
The second electrode of the diode first electrode level led with of top first is formed and is conductively connected；The sub- level hair of bottom first
First current expansion conductive layer of optical diode, the second current expansion conductive layer level led with of top first is used
Non-conductive bonding material bonding, forms non-conductive bonded layer；
19, of top first is level led sub with bottom second level led to be bonded：The sub- level in top first lights
The second electrode of the diode first electrode level led with of bottom second is formed and is conductively connected；The sub- level hair of top first
Second current expansion conductive layer of optical diode, the first current expansion conductive layer level led with of bottom second is used
Non-conductive bonding material bonding, forms non-conductive bonded layer；
20, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second lights
The second electrode of the diode first electrode level led with of top second is formed and is conductively connected；The sub- level hair of bottom second
First current expansion conductive layer of optical diode, the second current expansion conductive layer level led with of top second is used
Non-conductive bonding material bonding, forms non-conductive bonded layer；It is sequentially connected to the sub level led and bottom n-th in top n-th
Son is level led；
21, of top n-th is level led sub with bottom (n+1)th level led to be bonded：The sub- level in top n-th lights
The second electrode of the diode first electrode level led with of bottom (n+1)th is formed using metal bonding material and is connected；
The second level led current expansion conductive layer of of top n-th first electric current level led with of bottom (n+1)th
Extension conductive layer is bonded using non-conductive bonding material, forms non-conductive bonded layer；
22, the level led second electrode of of bottom (n+1)th first electricity level led with of bottom first
Extremely welding stage electrode；
23, the epitaxial substrate of erosion removal top light emitting epitaxial wafer, cushion and etch stop layers, expose the first type respectively
The surface of conductive layer；Using backcut technology in the level led epitaxial substrate of each son in bottom cutting splitting, formed high pressure
Light emitting diode.
3. a kind of high-voltage LED preparation method with stereo luminous structure, it is characterised in that：Comprise the following steps：
One, extension substrate top surface set gradually from the bottom to top cushion, etch stop layers, the first type conductive layer, active layer,
Second-Type conductive layer；
Two, the making each son in bottom is level led, forms dielectric layer in Second-Type conductive layer surface, and formed in the dielectric layer
Some through holes, the depth of through hole to Second-Type conductive layer；
Three, in dielectric layer surface evaporation metal, metallic reflector is formed, and metal fills up through hole and forms conductive channel；
Four, metal conducting layer is bonded with substrate using non-conductive bonding material, form non-conductive bonded layer；
Five, erosion removal epitaxial substrate, cushion and etch stop layers, expose the first type conductive layer respectively；
Six, transparent conductive material material is deposited with the first type conductive layer surface, form the first current expansion conductive layer；
Seven, etched using mask, ICP on the first current expansion conductive layer, make extension isolation channel, and extension isolation groove depth
To non-conductive bonded layer, each independent extension ray structure is formed；
Eight, etched using mask, ICP on the first current expansion conductive layer, make, form second electrode and make region, etching
Depth is to dielectric layer surface；
Nine, made in second electrode and form second electrode on region, second electrode is formed by conductive channel with metallic mirror
Connection, and across electrode isolation groove between second electrode and the side wall of extension ray structure；Second electrode and the first current expansion
Conductive layer is in the same side, and second electrode surface and the first current expansion conductive layer are in same level；
Ten, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode dielectric layer, and bottom
The extension isolation channel of the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in portion so far forms bottom without filling
Each son is level led；
11, it is level led to make each son in top, and current expansion material is deposited with Second-Type conductive layer surface, formation the
Two current expansion conductive layers；
12, etched using mask, ICP in the second current expansion conductive layer surface, extension isolation channel is formed, and etch depth is extremely
Epitaxial substrate, forms each independent extension ray structure；
13, etched using mask, ICP in the second current expansion conductive layer surface, form first electrode and make region, etching is deep
Spend to the first type conductive layer；
14, made in the first electrode of the first type conductive layer and first electrode is formed on region, and first electrode lights with extension
Across electrode isolation groove between the side wall of structure；First electrode is with the second current expansion conductive layer in the same side, and first electrode
Surface is with the second current expansion conductive layer surface in same level；
15, evaporation insulating materials filling extension isolation channel and electrode isolation groove form extension insulating barrier and electrode dielectric layer, and
The extension isolation channel of the level led surrounding's Cutting Road for constituting bottom high-pressure module of each son in top so far forms top without filling
Each son in portion is level led；
16, of bottom first is level led sub with top first level led to be bonded：The sub- level in bottom first lights
First current expansion conductive layer surface zone line of diode, second current expansion level led with of top first
Conductive layer surface zone line bonds together to form conductive bond layer using conductive bonding material；Of bottom first is level led
Remaining region of first current expansion conductive layer, the second current expansion conductive layer level led with of top first its
Remaining region is bonded using non-conductive bonding material, forms non-conductive bonded layer；Non-conductive bonded layer is wrapped up around conductive bond layer,
And thickness is identical；
17, of top first is level led sub with bottom second level led to be bonded：The sub- level in top first lights
The first electrode of the diode second electrode level led with of bottom second is formed and is conductively connected；
18, of bottom second is level led sub with top second level led to be bonded：The sub- level in bottom second lights
First current expansion conductive layer surface zone line of diode, second current expansion level led with of top second
Conductive layer surface zone line is bonded using conductive bonding material, forms conductive bond layer；Of bottom second is level led
The first current expansion conductive layer of remaining region and top second level led the second current expansion conductive layer
Remaining region is bonded using non-conductive bonding material, forms non-conductive bonded layer；Non-conductive bonding is wrapped up around conductive bond layer
Layer, and thickness is identical；It is sequentially connected to of top n-th level led level led with of bottom n-th；
19, of top n-th is level led sub with bottom (n+1)th level led to be bonded：The sub- level in top n-th luminous two
The first electrode of the pole pipe second electrode level led with of bottom (n+1)th is formed and is conductively connected；
20, the level led first electrode of of bottom (n+1)th second electrode level led with of bottom first
It is welding stage electrode；
21, the epitaxial substrate of erosion removal top light emitting epitaxial structure, cushion and etch stop layers, expose first respectively
The surface of type conductive layer；Using backcut technology in the cutting splitting in the level led epitaxial substrate of each son in bottom, formed
High-voltage LED.
4. a kind of high-voltage LED preparation method with stereo luminous structure as described in claim 1,2 or 3, it is special
Levy and be：The span 1-110 of light emitting diode series connection number n, and n is integer.
5. a kind of high-voltage LED preparation method with stereo luminous structure as described in claim 1,2 or 3, it is special
Levy and be：Each son in top is level led and thickness D of non-conductive bonded layer between each son in bottom is level led=
(2n+1) λ/4, wherein n is integer, and λ is emission wavelength.
6. a kind of high-voltage LED preparation method with stereo luminous structure as described in claim 1,2 or 3, it is special
Levy and be：Constitute the level led active layer material of each son including GaN, GaInN, AlGaN, AlGaInN, AlN,
AlGaInP, GaInP, GaAs, AlGaAs, GaInAs, AlGaInAs, GaInAsP III-V compound.
7. a kind of high-voltage LED preparation method with stereo luminous structure as described in claim 1,2 or 3, it is special
Levy and be：The material for constituting current expansion conductive layer includes tin indium oxide, ZnO, Graphene.
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| CN110164817B (en) * | 2019-05-22 | 2021-01-22 | 厦门乾照光电股份有限公司 | High-voltage light-emitting diode with double-sided horizontal bridging structure and manufacturing method thereof |
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| CN102208508A (en) * | 2010-03-30 | 2011-10-05 | 厦门乾照光电股份有限公司 | Light emitting diode structure and manufacturing method thereof |
| CN102231413A (en) * | 2009-10-13 | 2011-11-02 | 鸿富锦精密工业（深圳）有限公司 | LED (light-emitting diode) chip and manufacturing method thereof |
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| CN102231413A (en) * | 2009-10-13 | 2011-11-02 | 鸿富锦精密工业（深圳）有限公司 | LED (light-emitting diode) chip and manufacturing method thereof |
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