CN104751894A - Imprinted memory - Google Patents

Imprinted memory Download PDF

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Publication number
CN104751894A
CN104751894A CN201510091225.7A CN201510091225A CN104751894A CN 104751894 A CN104751894 A CN 104751894A CN 201510091225 A CN201510091225 A CN 201510091225A CN 104751894 A CN104751894 A CN 104751894A
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CN
China
Prior art keywords
data
memory
masterplate
stamped
storer
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CN201510091225.7A
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Chinese (zh)
Inventor
张国飙
Original Assignee
杭州海存信息技术有限公司
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Application filed by 杭州海存信息技术有限公司 filed Critical 杭州海存信息技术有限公司
Priority to CN201280042212.5A priority Critical patent/CN103875059B/en
Publication of CN104751894A publication Critical patent/CN104751894A/en

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Abstract

Wide application of a mask-programmed read-only memory (mask-ROM) is greatly restricted by high data mask cost. The invention provides an imprinted memory (imprinted memory), especially a three-dimensional imprinted memory (3D-iP for short). Data are recorded by an imprinted lithography (imprinted-lithography). The imprinted lithography is also named nano-imprinted lithography (NIL for short); and the cost price of the adopted data template (template) is lower than that of a data mask adopted by a photolithography.

Description

Impression storer

Technical field

The present invention relates to integrated circuit memory field, or rather, relate to masking film program read-only memory (mask-ROM).

Background technology

Mask-ROM is used to store and publishes.It contains one deck data inputting film.Figure in data inputting film is datagraphic, and it represents its data stored.The mask-ROM embodiment of Fig. 1 is point of crossing (cross-point) array memory.It contains many top address lines (as 2a-2d), end address wire (as 1a-1d) and storage element (as 5aa-5dd).The width of address wire is f.Its data inputting film is one deck spacer medium film 3b, and it stops the current flowing between top address line and end address wire, and whether distinguishes the different conditions of storage element by the existence of data opening (as access opening).As having a data opening at storage element 5aa place, its representative ' 1 '; Countless according to opening at storage element 5ab place, its representative ' 0 '.The spacer medium film 3b(that this figure only depicts near data opening is represented by cross chart line).In order to show address wire and the relation between they and data opening, the spacer medium film 3b in other place is not drawn.This figure does not draw the parts such as the diode in storage element yet.

In the prior art, the figure in data inputting film is got from data mask version by Graphic Exchanging.Graphic Exchanging, also referred to as print record (print), namely carrys out logging data by the mode of " print ".The mask plate of carrying content-data is called data mask version by the present invention.When the characteristic dimension of integrated circuit is less than the optical wavelength of litho machine, mask plate needs to adopt resolution enhance technology (resolution enhancement techniques, i.e. RET), if optics is close to revising (optical proximity correction, i.e. OPC) and phase shifting mask version (phase-shift mask) etc.The introducing of these technology causes the data volume of the needs write when manufacture 100 nanometer following mask plate greatly to increase, and also makes its manufacturing process increasingly sophisticated simultaneously.

Especially bad, the datagraphic in data mask version is different from other mask plate patterns of storer, as address wire figure, stores post (storage pillar) figure, storage hole (storage hole) figure etc.Address wire figure, storage post figure and storage hole figure have very strong micro-meter scale periodically, and namely in the region of micron size, figure repeats with some cycles.Why very important micron is is because it represents the range of diffraction of exposure light.Above-mentioned graphics Web publishing is suitable for adopting the RET technology such as OPC and phase-shift mask.On the other hand, the datagraphic in data mask version does not have micro-meter scale periodically completely, and namely in the region of micron size, datagraphic does not repeat completely.Datagraphic is not suitable for the RET technology such as OPC, phase-shift mask, and this makes the manufacture of data mask version very complicated.These factors above-mentioned cause after 90nm, and data mask version cost sharply rises.Such as say, be about 50,000 dollars at the cost of 90nm node one blocks of data mask plate, then increase to 250,000 dollars at its cost of 22nm node.After 90nm, high data mask version cost will greatly limit the widespread use of mask-ROM.

Summary of the invention

Fundamental purpose of the present invention is to provide a kind of method reducing data inputting cost.

Fundamental purpose of the present invention is to provide a kind of method reducing data mask version cost.

According to these and other object, the present invention proposes a kind of impression storer (imprinted memory), especially three-dimensional impression storer (three-dimensional imprinted memory, referred to as 3D-iP).It adopts stamped method (imprint-lithography) to print record data.Stamped method is also referred to as nano-imprint method (nano-imprint lithography, referred to as NIL).

Stamped method, by applying pressure on masterplate (template), makes impression glue (imprint resist) produce mechanically deform thus realize Graphic Exchanging.The main advantage adopting stamped method to carry out logging data is that its data masterplate is cheap more than the data mask version in photoetching process.Here, data masterplate is used to masterplate datagraphic being transformed into data inputting film.Template is also referred to as mother matrix (master), stamp (stamp), mould (mold) etc.In stamped method, because the figure in data inputting film is the 1:1 copy of figure on data masterplate, it does not have photolithographic optical distortion problem, and therefore data masterplate does not need OPC, and in its manufacture process, the data volume of required write is far smaller than data mask version.In addition, stamped method does not worry diffraction effect yet, and its data masterplate does not need to use phase shift technique, thus avoids adopting complicated mask plate technique.The more important thing is, stamped method makes print record have nanoscale (if 1 nanometer is to 100 nanometers) and not have the periodic datagraphic of micro-meter scale becomes possibility.Generally speaking, because manufaturing data masterplate is easier than data mask version, therefore data masterplate cost is lower, therefore impression storer has lower data inputting cost.

Correspondingly, the present invention proposes a kind of method manufacturing impression storer, it is characterized in that comprising the steps: 1) form a data inputting film; 2) by stamped method, datagraphic is transformed into this data inputting film from a data masterplate; 3) many address wires be coupled with this data inputting film are formed; Wherein, this datagraphic represents the data be stored in this storer, and this datagraphic has nanoscale, and does not have micro-meter scale periodically.

Accompanying drawing explanation

Fig. 1 is the sectional view of a kind of mask-ROM.

Fig. 2 A-Fig. 2 C represents each step of a kind of stamped method.

Fig. 3 A-Fig. 3 B is the top view of two kinds of data masterplates.

Fig. 4 is the sectional view of a kind of 3D-iP.

Notice, these accompanying drawings are only synoptic diagrams, and their not to scale (NTS) are drawn.In order to obvious and conveniently, the portion size in figure and structure may zoom in or out.In different embodiments, identical symbol generally represents corresponding or similar structure.

Embodiment

In order to reduce data inputting cost, the present invention proposes a kind of impression storer (imprinted memory), especially three-dimensional impression storer (three-dimensional imprinted memory, referred to as 3D-iP).With regard to the physical arrangement that it is final, impression storer is identical with mask-ROM, and they all utilize datagraphic in its data inputting film to store data.Impression storer is that they adopt different data inputting methods from the difference of mask-ROM: mask-ROM adopts photoetching process, and impression storer adopts stamped method.But the data mask version that the data masterplate that stamped method adopts adopts more than photoetching process is cheap.

Stamped method by applying pressure on masterplate (template), make impression glue (imprint resist) produce mechanically deform thus realize Graphic Exchanging (see works " Imprint-lithography with 25-nanometer resolution " such as Chou, Science magazine, 272 volumes, No. 5258,85-87 page).The example of stamped method comprises thermoplast stamped method (thermoplastic nano-imprint lithography), illumination stamped method (photo nano-imprint lithography), galvanochemistry stamped method (electro-chemical nano-imprint lithography) and laser and helps stamped method (laser-assisted direct imprint-lithography) etc.Stamped method once can impress (full-wafer imprint) on whole wafer, or adopts stepping to repeat to impress (step-and-repeat imprint).

Fig. 2 A-Fig. 2 C represents a kind of each step realizing stamped method.These figure are the sectional views along AA ' line in Fig. 1.Those steps are utilized for the storer logging data in Fig. 1.This stamped method is thermoplast stamped method.Its concrete steps are as follows.First on a counterdie (as address wire) 89, form a data inputting film 87, then form impression glue (as a thermoplast macromolecular material, i.e. thermoplastic polymer) 85(Fig. 2 A thereon).One masterplate 81(is also referred to as mother matrix, stamp, mould etc.) contact with impression glue 85 and apply pressure.Afterwards, heat to impression glue 85 and make its temperature exceed the glass temperature impressing glue, the figure at this moment on masterplate 81 is pressed in softening impression glue 85.After cooling, masterplate 81 and wafer separate (Fig. 2 B).Finally, by an etch step by impression glue 85 in Graphic Exchanging to (Fig. 2 C) in data inputting film 87.

Masterplate 81 has a topological graph pre-set.Masterplate 81 is containing multiple protruding 83.These projections 83 are given prominence to from a surface of masterplate 81, and its size is between 1 nanometer to 100 nanometers.Whether the existence of masterplate 81 protrusions 83 determines the state of the storage element corresponded.Such as have a projection 83 in the masterplate position corresponding with storage element 5aa, then storage element 5aa contains data opening 6aa, and is in one state.On the other hand, do not have projection in the masterplate position corresponding with storage element 5ba, then storage element 5ba is not containing data opening, and is in " 0 " state.Notice, after imprint step terminates, the graphics shape in impression glue 85 is just contrary with the graphics shape in masterplate 81.

Fig. 3 A-Fig. 3 B represents two kinds of data masterplates 81, and they all can be used for forming the datagraphic in Fig. 1.Data masterplate 81 in Fig. 3 A applies xf(x>1 in data mask version, best ~ 2) spirit of mask plate (see United States Patent (USP) 6,903,427), namely the minimum feature size F of masterplate 81 can be larger than the semiperiod of address wire (or width) f, the preferably twice of f.And adjacent projection (as position 5bb, 5bc, 5cc) can also combine.Correspondingly, data masterplate 81 is also referred to as xf masterplate.Such as say, the data masterplate of a 90nm can be the impression storer logging data of a 45nm.This can reduce the cost of data masterplate further.In this embodiment, protruding 83 have rectangular shape.

Fig. 3 B represents another kind of data masterplate 81.Its protruding 83(is as 5aa place, position) there is cylinder form.This columniform minimum feature size F also can be larger than the semiperiod of address wire (or width) f.In addition, protruding 83 can also have coniform shape and pyramidal in shape etc.Columniform protruding 83 are especially applicable to being formed by the method that electron beam is directly write.Clearly, data masterplate 81 also can the spirit of Application share type data mask version (see Chinese patent application " three-dimensional print record reservoir "), is a shared data masterplate, and namely data masterplate 81 carries the data of multiple different magnanimity publication.

The main advantage of stamped method is that its data masterplate is dirt cheap.Because print record method does not have photolithographic optical distortion problem, figure in its data inputting film is the 1:1 copy of figure on data masterplate, therefore on its data masterplate, each projection can be of similar shape, and does not need according to distribution situation protruding around it and carries out optics correction.For each data bit in impression storer, whether data masterplate only needs a data to define protruding existence.Compare with it, for the data bit of in mask-ROM, data mask version needs long numeric data to define the shape of data opening.For same memory data amount, the data volume of the required write of manufaturing data masterplate is far smaller than data mask version.In addition, stamped method does not worry diffraction effect yet, does not need to use phase shift technique, thus avoids adopting complicated mask plate technique.The more important thing is, data masterplate makes print record to have nanoscale (if 1 nanometer is to 100 nanometers) and the datagraphic without micro-meter scale periodically becomes possibility.Generally speaking, because manufaturing data masterplate is easier than data mask version, data masterplate cost is lower, therefore impression storer can have lower data inputting cost.

Impression storer is especially applicable to three-dimensional print and records reservoir ((three-dimensional printed memory, referred to as 3D-P) (see Chinese patent application " three-dimensional print records reservoir ").Correspondingly, the present invention proposes a kind of three-dimensional impression storer (three-dimensional imprinted memory, referred to as 3D-iP), and its employing stamped method comes for its accumulation layer logging data.Fig. 4 illustrates a kind of 3D-iP.It has identical physical arrangement with traditional 3D-MPROM, but its data entry method is different, and namely 3D-iP adopts stamped method to print record data, and 3D-MPROM adopts photoetching process.3D-iP is a kind of point of crossing based on diode (cross-point) array memory.It contains semi-conductive substrate 0 and a three-dimensional be stacked on substrate piles 16.Three-dimensional heap 16 is containing M(M >=2) individual mutually stacking accumulation layer (as 16A, 16B).Each accumulation layer (as 16A) is containing many top address lines (as 2a), end address wire (as 1a) and storage element (as 5aa).Each storage element contains a diode 3d and stores n(n >=1) bit data.Each accumulation layer also containing at least one layer data typing film, comprises spacer medium film 3b, resistive film (see U.S. Patent application 12/785,621) or extra implant film (see United States Patent (USP) 7,821,080).Data are entered in the data inputting film of accumulation layer by stamped method.Accumulation layer (as 16A, 16B) is coupled with substrate 0 by contact channels hole (as 1av, 1 ' av).Substrate circuitry 0X in substrate 0 contains the peripheral circuit of three-dimensional heap 16.

Should understand, not away under the prerequisite of the spirit and scope of the present invention, can change form of the present invention and details, this does not hinder them to apply spirit of the present invention.Therefore, except the spirit according to additional claims, the present invention should not be subject to any restriction.

Claims (10)

1. manufacture a method for impression storer, it is characterized in that comprising the steps:
1) a data inputting film is formed;
2) by stamped method, datagraphic is transformed into this data inputting film from a data masterplate;
3) many address wires be coupled with this data inputting film are formed;
Wherein, this datagraphic represents the data be stored in this storer, and this datagraphic has nanoscale, and does not have micro-meter scale periodically.
2. memory manufacturing according to claim 1, is further characterized in that: the size of this datagraphic is between 1 nanometer to 100 nanometers.
3. memory manufacturing according to claim 1, is further characterized in that: described impression storer is that three-dimensional print records reservoir.
4. memory manufacturing according to claim 1, is further characterized in that: described impression storer is a crosspoint array storer.
5. memory manufacturing according to claim 1, is further characterized in that: described stamped method is nano-imprint method.
6. memory manufacturing according to claim 5, is further characterized in that: described data template contains multiple projection.
7. memory manufacturing according to claim 6, is further characterized in that: the size of described projection is between 1 nanometer to 100 nanometers.
8. memory manufacturing according to claim 6, is further characterized in that: described projection has cylinder form.
9. memory manufacturing according to claim 6, is further characterized in that: described projection has coniform shape.
10. memory manufacturing according to claim 6, is further characterized in that: described projection has Pyramid.
CN201510091225.7A 2011-09-01 2012-09-02 Imprinted memory CN104751894A (en)

Priority Applications (1)

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CN201280042212.5A CN103875059B (en) 2011-09-01 2012-09-02 Three-dimensional print records reservoir

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1487362A (en) * 2002-09-17 2004-04-07 惠普开发有限公司 Impression mask photoetching
CN1811732A (en) * 2004-11-15 2006-08-02 张国飙 Pre-record storage capable of being set by user
CN101118921A (en) * 2007-05-29 2008-02-06 西安交通大学 Hall-effect based super-high density magnetic random memory and method for making same
US20100090191A1 (en) * 2008-10-06 2010-04-15 Byung-Kyu Lee Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters
US20100301449A1 (en) * 2007-12-31 2010-12-02 Sandisk 3D Llc Methods and apparatus for forming line and pillar structures for three dimensional memory arrays using a double subtractive process and imprint lithography

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835396A (en) * 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
CN1099695C (en) * 1998-09-24 2003-01-22 张国飙 Three-dimensional read-only memory
US6483736B2 (en) * 1998-11-16 2002-11-19 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
CN1285125C (en) * 2001-10-07 2006-11-15 张国飙 Three-D integrated memory
CN1310311C (en) * 2002-02-05 2007-04-11 张国飙 Design of 3D ROM
WO2013029564A1 (en) * 2011-09-01 2013-03-07 Zhang Guobiao Three-dimensional recorded memory

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1487362A (en) * 2002-09-17 2004-04-07 惠普开发有限公司 Impression mask photoetching
CN1811732A (en) * 2004-11-15 2006-08-02 张国飙 Pre-record storage capable of being set by user
CN101118921A (en) * 2007-05-29 2008-02-06 西安交通大学 Hall-effect based super-high density magnetic random memory and method for making same
US20100301449A1 (en) * 2007-12-31 2010-12-02 Sandisk 3D Llc Methods and apparatus for forming line and pillar structures for three dimensional memory arrays using a double subtractive process and imprint lithography
US20100090191A1 (en) * 2008-10-06 2010-04-15 Byung-Kyu Lee Cross point memory arrays, methods of manufacturing the same, masters for imprint processes, and methods of manufacturing masters

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