CN104749853A - Graphene-based terahertz absorption device - Google Patents
Graphene-based terahertz absorption device Download PDFInfo
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- CN104749853A CN104749853A CN201510200519.9A CN201510200519A CN104749853A CN 104749853 A CN104749853 A CN 104749853A CN 201510200519 A CN201510200519 A CN 201510200519A CN 104749853 A CN104749853 A CN 104749853A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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Abstract
The invention discloses a graphene-based terahertz absorption device, which consists of a graphene layer, a siliceous jagged one-dimensional photonic crystal and silicon dioxide jagged one-dimensional photonic crystal; the graphene layer is single-layer graphene layer; the siliceous jagged one-dimensional photonic crystal and the silicon dioxide jagged one-dimensional photonic crystal are coupled with each other; the graphene layer is laid flatly on the siliceous jagged one-dimensional photonic crystal; relative dielectric constants of silicon and silicon dioxide are 11.7 and 3.9 respectively, the jagged split angle is 45 degrees, and the space repeat cycle is 0.3mum. The graphene-based terahertz absorption device disclosed by the invention has the advantages that the structure is simple, the size is small, the manufacturing is convenient, integration is convenient, the absorption efficiency is high, and the like, and a novel method is provided for developing the high-efficiency mini-type terahertz absorption device.
Description
Technical field
The invention belongs to Semiconductor microstructure and Terahertz Technology field, particularly a kind of Terahertz based on Graphene absorbs device.
Background technology
THz wave refers to the electromagnetic wave of frequency within the scope of 0.1-10THz, is between microwave region and infrared band, has the advantage of microwave and optical communication concurrently, not only broader bandwidth, and signal to noise ratio (S/N ratio), resolution are higher, are highly suitable for the communications field.Because THz wave wavelength is longer, therefore there is good penetrability, decay in transmitting procedure less.These characteristics make Terahertz Technology all have broad application prospects in fields such as communication, medical science, astronomy.
Light absorption techniques plays key player in fields such as photodetection, saturable absorber, photovoltaic technologies.Growing in recent years along with Terahertz Technology, the research that relevant Terahertz absorbs device also achieves many achievements.Graphene, as novel semiconductor material, because it has the conductivity of metalloid, can produce the surface plasma of Terahertz frequency range under the condition of being excited, and this is develop efficient, miniature Terahertz absorption device to provide new method.
Summary of the invention
The object of the invention is for above-mentioned technical Analysis, provide that a kind of structure is simple, size is little, easy to make, be convenient to integrated, that absorption efficiency the is high Terahertz based on Graphene and absorb device.
Technical scheme of the present invention:
Terahertz based on Graphene absorbs a device, and be made up of graphene layer, siliceous sawtooth 1-D photon crystal and siliceous sawtooth 1-D photon crystal, graphene layer is single-layer graphene layer; Siliceous sawtooth 1-D photon crystal and siliceous sawtooth 1-D photon crystal intercouple, and graphene layer is laid on siliceous sawtooth 1-D photon crystal; The relative dielectric constant of silicon and silicon dioxide is respectively 11.7,3.9, and it is 45 ° that sawtooth splits angle, and the space repetition period is 0.3 μm.
Working mechanism of the present invention:
When THz wave irradiates grapheme material time, Graphene is excited to produce surface plasma, and under the effect of photon local effect, the Energy Coupling of THz wave in surface plasma, thus realizes the absorption of THz wave.
Advantage of the present invention is: device should be absorbed had that structure is simple, size is little based on Terahertz of Graphene, easy to make, be convenient to integrated, absorption efficiency advantages of higher, absorb device provide new method for developing efficient, miniature Terahertz.
Accompanying drawing explanation
Fig. 1 is the structural representation of the Terahertz absorption device based on Graphene.
Fig. 2 is the side structure schematic diagram of the Terahertz absorption device based on Graphene.
In figure: 1. the siliceous sawtooth 1-D photon crystal of graphene layer 2. siliceous sawtooth 1-D photon crystal 3.
Fig. 3 is the histogram of absorptivity.
Embodiment
Embodiment:
Terahertz based on Graphene absorbs a device, and as shown in Figure 1, 2, be made up of graphene layer 1, siliceous sawtooth 1-D photon crystal 2 and siliceous sawtooth 1-D photon crystal 3, graphene layer 1 is single-layer graphene layer; Siliceous sawtooth 1-D photon crystal 2 and siliceous sawtooth 1-D photon crystal 3 intercouple, and graphene layer 1 is laid on siliceous sawtooth 1-D photon crystal 2; The relative dielectric constant of silicon and silicon dioxide is respectively 11.7,3.9, and it is 45 ° that sawtooth splits angle, and the space repetition period is 0.3 μm.
In this device, siliceous sawtooth 1-D photon crystal 2 and siliceous sawtooth 1-D photon crystal 3 intercouple, and graphene layer 1 is laid on siliceous sawtooth 1-D photon crystal 2.When THz wave irradiates grapheme material time, Graphene is excited to produce surface plasma, and under the effect of photon local effect, the Energy Coupling of THz wave in surface plasma, thus realizes the absorption of THz wave.
As shown in Figure 3, the structure of this coupling makes the equivalent relative dielectric constant generating period of Graphene surrounding medium sexually revise, known by solving of scattering matrix, Graphene is excited surface plasma and is known from experience the effect of modulating at this dielectric periodicity and issue adding lustre to loose division, thus realize Graphene and be excited the frequency modulation (PFM) of surface plasma, by changing the size of splitter angle, changing the equivalent relative dielectric constant of Graphene surrounding medium, the modulation of Terahertz absorption frequency can be realized.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (1)
1. the Terahertz based on Graphene absorbs a device, it is characterized in that: be made up of graphene layer, siliceous sawtooth 1-D photon crystal and siliceous sawtooth 1-D photon crystal, graphene layer is single-layer graphene layer; Siliceous sawtooth 1-D photon crystal and siliceous sawtooth 1-D photon crystal intercouple, and graphene layer is laid on siliceous sawtooth 1-D photon crystal; The relative dielectric constant of silicon and silicon dioxide is respectively 11.7,3.9, and it is 45 ° that sawtooth splits angle, and the space repetition period is 0.3 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510200519.9A CN104749853B (en) | 2015-04-24 | 2015-04-24 | A kind of Terahertz based on graphene absorbs device |
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| CN201510200519.9A CN104749853B (en) | 2015-04-24 | 2015-04-24 | A kind of Terahertz based on graphene absorbs device |
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| CN104749853A true CN104749853A (en) | 2015-07-01 |
| CN104749853B CN104749853B (en) | 2018-03-30 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106019433A (en) * | 2016-07-26 | 2016-10-12 | 厦门大学 | Graphene based terahertz broadband adjustable wave absorption device |
| CN108899411A (en) * | 2018-07-06 | 2018-11-27 | 江苏心磁超导体有限公司 | Carbon electronics TES superconductive device and preparation method thereof |
| CN109638471A (en) * | 2018-12-14 | 2019-04-16 | 电子科技大学 | A kind of adjustable two frequency ranges THz absorber based on Fermi's dirac material |
| CN110780369A (en) * | 2019-11-05 | 2020-02-11 | 常州工业职业技术学院 | Visible light all-band absorber based on graphene and one-dimensional photonic crystal composite structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811568A (en) * | 2014-02-21 | 2014-05-21 | 中国科学院半导体研究所 | Surface incidence graphene photoelectric detector based on one-dimensional optical grating |
| CN104092013A (en) * | 2014-07-18 | 2014-10-08 | 桂林电子科技大学 | Frequency reconfigurable antenna based on graphene |
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2015
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811568A (en) * | 2014-02-21 | 2014-05-21 | 中国科学院半导体研究所 | Surface incidence graphene photoelectric detector based on one-dimensional optical grating |
| CN104092013A (en) * | 2014-07-18 | 2014-10-08 | 桂林电子科技大学 | Frequency reconfigurable antenna based on graphene |
Non-Patent Citations (4)
| Title |
|---|
| A. YU. NIKITIN: "Edge and waveguide terahertz surface plasmon modes in graphene microribbons", 《PHYSICAL REVIEW B》 * |
| LIN HAI ET AL: "Characterization of graphene-based photonic crystal in THz spectrum with finite-difference time domain method", 《CHIN. PHYS. B》 * |
| SAILING HE ET AL: "Broadband THz Absorbers With Graphene-Based Anisotropic Metamaterial Films", 《IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY》 * |
| 谢凌云 ET AL: "光子晶体增强石墨烯THz吸收", 《物理学报》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106019433A (en) * | 2016-07-26 | 2016-10-12 | 厦门大学 | Graphene based terahertz broadband adjustable wave absorption device |
| CN106019433B (en) * | 2016-07-26 | 2018-12-14 | 厦门大学 | The adjustable wave absorbing device in Terahertz broadband based on graphene |
| CN108899411A (en) * | 2018-07-06 | 2018-11-27 | 江苏心磁超导体有限公司 | Carbon electronics TES superconductive device and preparation method thereof |
| CN109638471A (en) * | 2018-12-14 | 2019-04-16 | 电子科技大学 | A kind of adjustable two frequency ranges THz absorber based on Fermi's dirac material |
| CN109638471B (en) * | 2018-12-14 | 2021-01-29 | 电子科技大学 | Adjustable two-frequency-band THz absorber based on Fermi Dirac material |
| CN110780369A (en) * | 2019-11-05 | 2020-02-11 | 常州工业职业技术学院 | Visible light all-band absorber based on graphene and one-dimensional photonic crystal composite structure |
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| Publication number | Publication date |
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| CN104749853B (en) | 2018-03-30 |
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Granted publication date: 20180330 Termination date: 20210424 |