CN104749853B - A kind of Terahertz based on graphene absorbs device - Google Patents
A kind of Terahertz based on graphene absorbs device Download PDFInfo
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- CN104749853B CN104749853B CN201510200519.9A CN201510200519A CN104749853B CN 104749853 B CN104749853 B CN 104749853B CN 201510200519 A CN201510200519 A CN 201510200519A CN 104749853 B CN104749853 B CN 104749853B
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- sawtooth
- siliceous
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of Terahertz based on graphene absorbs device, is made up of graphene layer, siliceous sawtooth 1-D photon crystal and siliceous sawtooth 1-D photon crystal, graphene layer is single-layer graphene layer；Siliceous sawtooth 1-D photon crystal and siliceous sawtooth 1-D photon crystal are intercoupled, and graphene layer is laid on siliceous sawtooth 1-D photon crystal；The relative dielectric constant of silicon and silica is respectively 11.7,3.9, and sawtooth splits angle as 45 °, and the space repetition period is 0.3 μm.It is an advantage of the invention that：The Terahertz based on graphene absorb device have the advantages that simple in construction, size is small, it is easy to make, be easy to integrate, absorption efficiency it is high, absorb device to develop efficient, miniature Terahertz and provide new method.
Description
Technical field
The invention belongs to Semiconductor microstructure and Terahertz Technology field, particularly a kind of Terahertz based on graphene is inhaled
Receive device.
Background technology
THz wave refers to electromagnetic wave of the frequency in the range of 0.1-10THz, between microwave band and infrared band,
The advantages of having microwave and optic communication concurrently, not only broader bandwidth, and signal to noise ratio, resolution ratio are higher, are highly suitable for the communications field.By
It is longer in THz wave wavelength, therefore there is good penetrability, decay in transmitting procedure smaller.These characteristics cause terahertz
Hereby technology has broad application prospects in fields such as communication, medical science, astronomy.
Light absorption techniques play key player in fields such as photodetection, saturable absorber, photovoltaic technologies.In recent years
Growing with Terahertz Technology, the research that relevant Terahertz absorbs device also achieves many achievements.Graphene conduct
New semi-conducting material, because it has the electrical conductivity of metalloid, the surface of Terahertz frequency range can be produced under the conditions of being excited
Plasma, this provides new method to develop efficient, miniature Terahertz absorption device.
The content of the invention
The purpose of the present invention is to be directed to above-mentioned technical Analysis, there is provided it is a kind of it is simple in construction, size is small, it is easy to make, be easy to
Integrated, the high Terahertz based on graphene of absorption efficiency absorbs device.
Technical scheme：
A kind of Terahertz based on graphene absorbs device, by graphene layer, siliceous sawtooth 1-D photon crystal and dioxy
SiClx matter sawtooth 1-D photon crystal is formed, and graphene layer is single-layer graphene layer；Siliceous sawtooth 1-D photon crystal and dioxy
SiClx matter sawtooth 1-D photon crystal is intercoupled, and graphene layer is laid on siliceous sawtooth 1-D photon crystal；Silicon and dioxy
The relative dielectric constant of SiClx is respectively 11.7,3.9, and sawtooth splits angle as 45 °, and the space repetition period is 0.3 μm.
The working mechanism of the present invention：
When THz wave irradiates grapheme material, graphene is excited to produce surface plasma, in photon local
In the presence of effect, the energy coupling of THz wave is into surface plasma, so as to realize the absorption of THz wave.
It is an advantage of the invention that：The Terahertz based on graphene, which absorbs device, has that simple in construction, size is small, making side
Just, it is easy to integrate, the advantages that absorption efficiency is high, absorbing device to develop efficient, miniature Terahertz provides new method.
Brief description of the drawings
Fig. 1 is the structural representation that the Terahertz based on graphene absorbs device.
Fig. 2 is the side structure schematic diagram that the Terahertz based on graphene absorbs device.
In figure：1. the siliceous sawtooth 1-D photon crystal of the siliceous sawtooth 1-D photon crystal 3. of graphene layer 2.
Fig. 3 is the histogram of absorptivity.
Embodiment
Embodiment：
A kind of Terahertz based on graphene absorbs device, as shown in Figure 1, 2, by graphene layer 1, the one-dimensional light of siliceous sawtooth
Sub- crystal 2 and siliceous sawtooth 1-D photon crystal 3 are formed, and graphene layer 1 is single-layer graphene layer；Siliceous sawtooth is one-dimensional
Photonic crystal 2 and siliceous sawtooth 1-D photon crystal 3 intercouple, and graphene layer 1 is laid in the one-dimensional light of siliceous sawtooth
On sub- crystal 2；The relative dielectric constant of silicon and silica is respectively 11.7,3.9, and it is 45 ° that sawtooth, which splits angle, the space repetition period
For 0.3 μm.
Siliceous sawtooth 1-D photon crystal 2 and siliceous sawtooth 1-D photon crystal 3 intercouple in the device, stone
Black alkene layer 1 is laid on siliceous sawtooth 1-D photon crystal 2.When THz wave irradiate grapheme material when, graphene by
Swash produce surface plasma, in the presence of photon local effect, the energy coupling of THz wave into surface plasma,
So as to realize the absorption of THz wave.
As shown in figure 3, the structure of this coupling causes the equivalent relative dielectric constant generating period of graphene surrounding medium
Sexually revise, by the solution of collision matrix, graphene is excited surface plasma and known from experience in this dielectric periodicity tune
Dispersion division occurs in the presence of system, so as to realize that graphene is excited the frequency modulation(PFM) of surface plasma, by changing splitter angle
Size, change graphene surrounding medium equivalent relative dielectric constant, you can realize the modulation of Terahertz absorption frequency.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (1)
1. a kind of Terahertz based on graphene absorbs device, it is characterised in that：It is brilliant by graphene layer, the one-dimensional photon of siliceous sawtooth
Body and siliceous sawtooth 1-D photon crystal are formed, and graphene layer is single-layer graphene layer；The siliceous one-dimensional photon of sawtooth is brilliant
Body and siliceous sawtooth 1-D photon crystal are intercoupled, and graphene layer is laid on siliceous sawtooth 1-D photon crystal；
The relative dielectric constant of silicon and silica is respectively 11.7,3.9, and sawtooth splits angle as 45 °, and the space repetition period is 0.3 μm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510200519.9A CN104749853B (en) | 2015-04-24 | 2015-04-24 | A kind of Terahertz based on graphene absorbs device |
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| CN201510200519.9A CN104749853B (en) | 2015-04-24 | 2015-04-24 | A kind of Terahertz based on graphene absorbs device |
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| CN104749853A CN104749853A (en) | 2015-07-01 |
| CN104749853B true CN104749853B (en) | 2018-03-30 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106019433B (en) * | 2016-07-26 | 2018-12-14 | 厦门大学 | The adjustable wave absorbing device in Terahertz broadband based on graphene |
| CN108899411A (en) * | 2018-07-06 | 2018-11-27 | 江苏心磁超导体有限公司 | Carbon electronics TES superconductive device and preparation method thereof |
| CN109638471B (en) * | 2018-12-14 | 2021-01-29 | 电子科技大学 | Adjustable two-frequency-band THz absorber based on Fermi Dirac material |
| CN110780369B (en) * | 2019-11-05 | 2021-11-30 | 常州工业职业技术学院 | Visible light all-band absorber based on graphene and one-dimensional photonic crystal composite structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811568A (en) * | 2014-02-21 | 2014-05-21 | 中国科学院半导体研究所 | Surface incidence graphene photoelectric detector based on one-dimensional optical grating |
| CN104092013A (en) * | 2014-07-18 | 2014-10-08 | 桂林电子科技大学 | Frequency reconfigurable antenna based on graphene |
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2015
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811568A (en) * | 2014-02-21 | 2014-05-21 | 中国科学院半导体研究所 | Surface incidence graphene photoelectric detector based on one-dimensional optical grating |
| CN104092013A (en) * | 2014-07-18 | 2014-10-08 | 桂林电子科技大学 | Frequency reconfigurable antenna based on graphene |
Non-Patent Citations (4)
| Title |
|---|
| Broadband THz Absorbers With Graphene-Based Anisotropic Metamaterial Films;Sailing He et al;《IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY》;20131130;全文 * |
| Characterization of graphene-based photonic crystal in THz spectrum with finite-difference time domain method;Lin Hai et al;《Chin. Phys. B》;20140716;全文 * |
| Edge and waveguide terahertz surface plasmon modes in graphene microribbons;A. Yu. Nikitin;《PHYSICAL REVIEW B》;20111024;全文 * |
| 光子晶体增强石墨烯THz吸收;谢凌云 et al;《物理学报》;20141231;全文 * |
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