CN104737306B - 修复硅基光伏太阳能电池的装置和方法 - Google Patents

修复硅基光伏太阳能电池的装置和方法 Download PDF

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Publication number
CN104737306B
CN104737306B CN201380055429.4A CN201380055429A CN104737306B CN 104737306 B CN104737306 B CN 104737306B CN 201380055429 A CN201380055429 A CN 201380055429A CN 104737306 B CN104737306 B CN 104737306B
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China
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solar cell
photovoltaic solar
liquid
temperature
tank
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Expired - Fee Related
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CN201380055429.4A
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English (en)
Chinese (zh)
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CN104737306A (zh
Inventor
S.杜波伊斯
N.恩贾尔伯特
J-P.加兰德特
P.吉唐
F.塔奈
J.维曼
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Prostheses (AREA)
CN201380055429.4A 2012-09-14 2013-09-16 修复硅基光伏太阳能电池的装置和方法 Expired - Fee Related CN104737306B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1202454A FR2995727B1 (fr) 2012-09-14 2012-09-14 Dispositif et procede de restauration de cellules photovoltaiques a base de silicium
FR1202454 2012-09-14
PCT/FR2013/000240 WO2014041260A1 (fr) 2012-09-14 2013-09-16 Dispositif et procede de restauration de cellules solaires photo voltaiques a base de silicium

Publications (2)

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CN104737306A CN104737306A (zh) 2015-06-24
CN104737306B true CN104737306B (zh) 2017-07-11

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Country Link
US (1) US9520528B2 (https=)
EP (1) EP2896075B1 (https=)
JP (1) JP2015528646A (https=)
CN (1) CN104737306B (https=)
FR (1) FR2995727B1 (https=)
WO (1) WO2014041260A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
EP3268982A4 (en) * 2015-03-13 2019-04-24 NewSouth Innovations Pty Limited PROCESS FOR MACHINING A SILICON MATERIAL
DE102015114298A1 (de) * 2015-08-27 2017-03-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Stabilisieren einer photovoltaischen Silizium-Solarzelle
CN105449044B (zh) * 2015-12-30 2017-02-01 江南大学 Led硅太阳电池光诱导氢钝化与缺陷修复装置
US20220262973A1 (en) * 2018-07-30 2022-08-18 mPower Technology, Inc. In-situ rapid annealing and operation of solar cells for extreme environment applications
CN109616555B (zh) * 2018-12-17 2020-08-28 中节能太阳能科技（镇江）有限公司 一种提高太阳能电池抗光衰能力的方法和应用
CN112071960B (zh) * 2020-09-30 2025-06-20 正泰新能科技股份有限公司 一种降低太阳能电池光致衰减的处理设备及处理方法
CN112216614B (zh) * 2020-11-09 2024-11-26 秦皇岛可视自动化设备有限公司 一种电子注入装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080035489A1 (en) * 2006-06-05 2008-02-14 Rohm And Haas Electronic Materials Llc Plating process
CN101405875A (zh) * 2006-03-21 2009-04-08 康斯坦茨大学 用于制作效率稳定的光电单元的方法
CN201450015U (zh) * 2009-07-08 2010-05-05 中电电气（南京）光伏有限公司 一种改善晶体硅太阳能电池片光致衰减特性的装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3026710A (en) * 1956-10-01 1962-03-27 Phillips Petroleum Co Ammonium nitrate analysis and control
JPH01100975A (ja) * 1987-10-14 1989-04-19 Sanyo Electric Co Ltd 光起電力装置
JP3150681B2 (ja) * 1988-09-30 2001-03-26 鐘淵化学工業株式会社 薄膜非晶質半導体装置
JP3078938B2 (ja) * 1992-12-28 2000-08-21 キヤノン株式会社 太陽電池
JP2001074927A (ja) * 1999-09-07 2001-03-23 Fuji Xerox Co Ltd 着色膜の形成方法、駆動素子及び液晶表示装置
JP4801833B2 (ja) * 1999-10-19 2011-10-26 光 小林 太陽電池及びその製造方法
JP4636719B2 (ja) * 2001-03-27 2011-02-23 光 小林 半導体膜の処理方法及び光起電力素子の製造方法
JP4448644B2 (ja) * 2002-05-09 2010-04-14 シャープ株式会社 半導体装置の製造方法
DE102009059300B4 (de) * 2009-12-23 2019-11-28 Solarworld Industries Gmbh Photovoltaikzellen-Transport- und -Regenerationsbehälter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101405875A (zh) * 2006-03-21 2009-04-08 康斯坦茨大学 用于制作效率稳定的光电单元的方法
US20080035489A1 (en) * 2006-06-05 2008-02-14 Rohm And Haas Electronic Materials Llc Plating process
CN201450015U (zh) * 2009-07-08 2010-05-05 中电电气（南京）光伏有限公司 一种改善晶体硅太阳能电池片光致衰减特性的装置

Also Published As

Publication number Publication date
JP2015528646A (ja) 2015-09-28
EP2896075B1 (fr) 2016-06-01
US9520528B2 (en) 2016-12-13
FR2995727A1 (fr) 2014-03-21
FR2995727B1 (fr) 2014-10-24
WO2014041260A1 (fr) 2014-03-20
EP2896075A1 (fr) 2015-07-22
US20150236190A1 (en) 2015-08-20
CN104737306A (zh) 2015-06-24

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