CN104732094B - A kind of spececraft charging means of defence based on ultraviolet LED - Google Patents
A kind of spececraft charging means of defence based on ultraviolet LED Download PDFInfo
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Abstract
The present invention relates to a kind of surface charge protecting method based on ultraviolet LED, belong to microelectronics technology, space radiation technical field.Calculate the relation of the photoelectric current and incident light frequency and power of spacecraft surfacing；The photoelectron emissions coefficient of spacecraft surfacing is obtained first, establishes the relation of photoelectric current and incident light spectral irradiance；(2) according to the photoelectric current that step (1) obtains and the relation of incident light spectral irradiance, a kind of suitable incident light frequency is selected；Calculate the in-orbit density of charging current I of spacecraft surfacing；Calculating is enough to offset the incident optical power needed for charging current, makes J=I, obtains p (λ).
Description
Technical field
The present invention relates to a kind of surface charge protecting method based on ultraviolet LED, belong to microelectronics technology, space spoke
Penetrate technical field.
Background technology
Hot plasma in space can cause surface charging and discharging effects, charging electricity with the interaction of spacecraft surfacing
Stream source includes charged electrical electric current, charging proton current, secondary electron electric current, backscattered electron electric current, light induced electron electric current, phase
Adjacent surface is due to electric current, the electronics of satellite active transmitting or gas current etc. caused by resistance capacitance inductance differences.When all
Current source reaches balance, i.e., when total charging current is null, satellite reaches final charging potential.Above-mentioned current source removes
Have outside the Pass with space plasma environment, it is also related to surfacing characteristic.Therefore, may exist between different materials and fill
Electric potential is poor, and this is commonly known as relatively powered.When spacecraft adjacent surface it is relatively powered too high when can trigger electric discharge, thus
Caused electromagnetic pulse can disturb the normal operation of spacecraft.
To alleviate influence of the surface charging and discharging effects to spacecraft, countries in the world are opened for the powered guard technology of satellite surface
Substantial amounts of research work is opened up, wherein passive protection technology is mainly resistivity, ground connection, shielding and the filtering of control surface material
Deng, still, for some special materials, due to the limitation of engineer applied, passive protection can not be carried out, at this moment also can be using actively
Guard technology.Current active defense technology mainly have electron emission method, ion absorption method or both transmitting being combined etc. from
Daughter method.Electron emission method, it is the principle using field emission, is launched electronics to sky from spacecraft by certain device
Between, principle is similar to lightning rod；Ion absorption method, it is mainly used in electronegative spacecraft control of Electric potentials, higher negative potential can
So that the ion of transmitting is acted on by coulomb returns to spacecraft surface, the negative potential on surface is neutralized；Plasma emission method, care for name
It is exactly come controlling potential by outside transmitting plasma to think justice, and existing negative electrical charge also has positive charge, therefore this in plasma
Method can regard the synthesis of electron emission method and ion absorption method as.Generally use electric thruster realizes active control at present,
It is larger to take resource, complex designing.
Theory analysis shows that, when spacecraft surface is by illumination, photon excitation goes out a large amount of photoelectrons with in-orbit monitoring,
Make its surface charging potential well below non-area of illumination.Therefore, if shadow region can be in spacecraft using a kind of technology
Surface illumination condition is provided, then can regulate and control the local conductive environment of spacecraft by producing photoelectric current, reach alleviation space flight
The purpose of device surface charging.
The content of the invention
The present invention relates to a kind of surface charge protecting method based on ultraviolet LED, this method can not change spacecraft
On the premise of surface is designed, using relatively low energy consumption, alleviate spacecraft surface charged effect.Particular content comprises the following steps：
(1) relation of the photoelectric current and incident light frequency and power of spacecraft surfacing is calculated；Spacecraft is obtained first
The photoelectron emissions coefficient of surfacing, establish the relation of photoelectric current and incident light spectral irradiance：
Wherein JphFor photoelectric current, unit A/m2, f (λ) is photoelectric yield, and dimension is electron number/photon；P (λ) is ripple
A length of λ solar spectrum irradiancy average value, unit Wm-2·μm-1；E is the electricity of elementary charge, equal to 1.6 × 10-19
Storehouse；H is planck constant, 6.626 × 10-34J·s；C is the light velocity, 3 × 108m/s；
(2) according to the photoelectric current that step (1) obtains and the relation of incident light spectral irradiance, select a kind of suitable incident
Light frequency, both meets engineering feasibility, and and can produces larger photoelectric current；Now, photoelectric current J and incident light spectral irradiance
Relation is
(3) the in-orbit density of charging current I of spacecraft surfacing is calculated：
I=IE(V)-[II(V)+ISE(V)+ISI(V)+IBSE(V)]
Wherein IETo inject electron stream, IE(V) show that it is the function relevant with Satellite surface potential to inject electron stream；
IITo inject ion stream, II(V) show that it is the function relevant with Satellite surface potential to inject ion stream；
ISEFor the secondary electron stream from electronics, ISE(V) show that the secondary electron stream from electronics is and spacecraft surface
The relevant function of current potential；
ISITo come the secondary electron stream of self seeding ion stream, ISI(V) show that the secondary electron stream from ion is and space flight
The relevant function of device surface potential；
IBSETo come the backscattered electron stream of self seeding electron stream, IBSE(V) show that the back scattering for carrying out self seeding electron stream is electric
Subflow is the function relevant with Satellite surface potential；
The plasma of terrestrial space can be described with single Maxwell-Boltzmann's distribution.Maxwell-bohr is hereby
Graceful distribution FiAccording to the following formula.
In formula：
Fi(V) --- the distribution function of i-th kind of particle；
ni--- the number density of i-th kind of particle, m-3；
mi--- the quality of i-th kind of particle, kg；
K --- Boltzmann constant, 1.38 × 10-23J·K-1；
Ti--- the temperature of i-th kind of particle, K；
V --- speed, m/s.
According to Maxwell equation, it should have：
Wherein：
ISE=KsEIE, KSEFor the secondary electron yield of electronics；
ISI=KsIII, KSIFor the secondary electron yield of ion；
IBSE=KBSEIE, KBSEFor backscattered electron coefficient；
(4) according to the result of (1), (2) and (3), the incident optical power being enough to offset needed for charging current is calculated, makes J=
I, obtain p (λ)；
(5) LED array and fiber coupling system are designed.
Beneficial effect
1) present invention can switch LED light source as needed, it is not necessary to long-term power supply, and the lighter in weight of LED array, it is desirable to
Input power it is not high, therefore take satellite resource it is less；
2) present invention is based on photoelectric effect, by setting condition of work photoelectric current can be made to be enough to offset in-orbit charging current；
The in-orbit charging potential caused by solar irradiation of satellite reduces the checking that situation has obtained the Monitoring Data of multi-satellite.
Brief description of the drawings
Fig. 1 is to reach the optical power density that the difference offset needed for Au material charging currents penetrates light；
Fig. 2 is the working state schematic representation of spaceborne UV-LED devices.
Embodiment
The present invention will be further described with reference to the accompanying drawings and examples.
Embodiment
(1) relation of the photoelectric current and incident light frequency and power of spacecraft surfacing is calculated.
In photoelectric effect, incident light is visible ray and ultraviolet light, and the energy of these photons only has several electron-volts, with
For the binding energy of electronics in the same order of magnitude, this is also the objective condition that photoelectric effect can occur.During generation photoelectric effect, energy
Obtain the only outermost electron that photon energy spins off.Whether incident light, which can result in material, occurs photoelectric effect and launches
Photoelectron, it is closely bound up with the energy of incident light and the work function of material, and to obtain photoelectricity electron current, also need concern in addition
One parameter, the i.e. photoelectric yield of material.Show for the test result of Au materials, Au work function is 4.7eV, works as photon
Energy is more than after 4.7eV, begins with photoelectron effusion, and as the increase of incident photon energy, photoelectric yield are gradual
Increase, is finally reached saturation.It can be seen that after incident light energy is more than the work function of material, with the increase of photon energy, light
Electron yield will gradually increase.Therefore, in the case where incident optical power is constant, reasonable selection incident light frequency, can increase
Photoelectric yield.So the first step of the invention is to obtain the photoelectric yield of material, and establish photoelectricity electron current and incident light
Relation between frequency and power.
The photoelectricity electron current of spacecraft surfacing is：
Wherein f (λ) is photoelectric yield, and dimension is electron number/photon；P (λ) is that the solar spectrum that wavelength is λ irradiates
Spend average value, unit Wm-2·μm-1；E is the electricity of elementary charge, equal to 1.6 × 10-19Storehouse；H is planck constant,
6.626×10-34J·s；C is the light velocity, 3 × 108m/s.Using above-mentioned formula, if the photoelectric yield f (λ) of material can be obtained,
The part for being more than spacecraft surfacing photoelectric effect work function to 0.01 μm~0.24 μm of energy integrates, so that it may obtains
The density of photocurrent of spacecraft surfacing, dimension A/m2。
(2) a kind of higher incident light frequency of efficiency is selected.
Above-mentioned formula expression be using continuous spectrum irradiation situation, according to single-frequency ultraviolet source to material
It is irradiated, as long as photoelectric yield is suitable, can also reaches effective effect.I.e.：
The photoelectric yield of material can be seen that in incident light according to the relation of material photoelectric yield and incident light frequency
Saturation after sub- energy is sufficiently large, therefore, the powered protection of satellite surface is carried out according to spaceborne LED, then is needed
Frequency highest is selected in the LED succeeded in developing, to obtain higher photoelectric yield.
(3) the in-orbit density of charging current of analysis of material.
The data announced according to NASA, the hot plasma Injection Current under the worst case observed in-orbit so far
Density is the maximum monitored on ATS-6 satellites, equal to 1.52nA/cm2.According to described previously, if photoelectric current is more than incidence
Electronic current, then spececraft charging current potential will be declined quickly.Therefore, it is to design incident optical frequency than more conservative condition
Rate and power, ensure that photoelectricity electron current reaches 1.52nA/cm2.Charging current can also be calculated using following formula：
I=IE(V)-[II(V)+ISE(V)+ISI(V)+IBSE(V)]
Wherein IETo inject electron stream, IITo inject ion stream, ISEFor the secondary electron stream from electronics, IBSEFor from
Inject the backscattered electron stream of electron stream, ISITo carry out the secondary electron stream of self seeding ion stream.The plasma of terrestrial space can
Described with single Maxwell-Boltzmann's distribution.Maxwell-Boltzmann is distributed FiAccording to the following formula.
In formula：
Fi(V) --- the distribution function of i-th kind of particle；
ni--- the number density of i-th kind of particle, m-3；
mi--- the quality of i-th kind of particle, kg；
K --- Boltzmann constant, 1.38 × 10-23J·K-1；
Ti--- the temperature of i-th kind of particle, K；
V --- speed, m/s.
According to Maxwell equation, it should have：
Wherein：
(4) according to the result of (1), (2) and (3), the incident optical power being enough to offset needed for charging current is calculated.
The photoelectric effect work function of star catalogue material is in 5eV or so, then correspondingly below 240nm wave bands can result in star
The photoelectron emissions of table material.By taking Au materials as an example, using 240nm incident light, its yield is about 10-5Electronics/photon.Too
Photoelectric current under sunlight is 3.2 × 10-5A/m2, the incident optical power that can calculate needs is about 16.6W/m2.According to purple
The finding of outer light source, 210nm ultraviolet LED have been succeeded in developing, if can realize, below 200nm LED is developed, power
Demand can be reduced to 5W/m2Below.
Photoelectric yield of the Au materials of table 1 under different wavelengths of light irradiation
| Wavelength | Au materials photoelectric yield (electron number/photon) |
| 240 | 1E-5 |
| 210 | 3E-5 |
| 175 | 3E-4 |
| 155 | 1E-3 |
| 138 | 9E-4 |
| 120 | 1E-2 |
Table 2 reaches the power of Au material photoelectric current needs
Obtain offsetting the luminous power of charging current and the relation of wavelength of Au materials, as shown in Figure 1；
(5) LED array and fiber coupling system are designed.
Current domestic ultraviolet LED single tube power can accomplish several mW (under 20mA), and external highest can reach 50mW.According to
(4) calculating, reach Au materials sunshine irradiation under density of photocurrent, using wavelength 240nm ultraviolet LED, it is necessary to
Incident power is 16.6W/m2, it is assumed that material area is about 1m2, then to reduce the charged electrical stream of whole plate face, it is necessary to power
For 16.6W, according to peak power (50mW) LED, then the battle array of array, i.e., one 18 × 18 that 332 single tubes are formed is needed
Row can meet power demand.
LED is placed on out of my cabin, the surface that face needs to irradiate is simplest mode.But the heat of LED itself
Control will turn into problem.Therefore, LED should be placed in cabin, be drawn light source with optical fiber, schematic diagram is shown in Fig. 2.
Claims (1)
1. a kind of spececraft charging means of defence based on ultraviolet LED, it is characterised in that step is：
(1) relation of the photoelectric current with incident light spectral irradiance of spacecraft surfacing is calculated, obtains spacecraft surface first
The photoelectron emissions coefficient of material, establish photoelectric current and incident light spectral irradiance relation：
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Planck constant, 6.626 × 10-34J·s；C is the light velocity, 3 × 108m/s；
(2) according to the photoelectric current that step (1) obtains and the relation of incident light spectral irradiance, a kind of suitable incident optical frequency is selected
Rate, now, photoelectric current J and the relation of incident light spectral irradiance are
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(3) the in-orbit density of charging current I of spacecraft surfacing is calculated：
I=IE(V)-[II(V)+ISE(V)+ISI(V)+IBSE(V)]
Wherein IETo inject electron stream, IE(V) show that it is the function relevant with Satellite surface potential V to inject electron stream；
IITo inject ion stream, II(V) show that it is the function relevant with Satellite surface potential to inject ion stream；
ISEFor the secondary electron stream from electronics, ISE(V) show that the secondary electron stream from electronics is and Satellite surface potential
Relevant function；
ISITo come the secondary electron stream of self seeding ion stream, ISI(V) show that the secondary electron stream from ion is and spacecraft table
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K --- Boltzmann constant, 1.38 × 10-23J·K-1；
Ti--- the temperature of i-th kind of particle, K；
V --- speed, m/s；
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ISE=KsEIE, KsEFor the secondary electron yield of electronics；
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IBSE=KBSEIE, KBSEFor backscattered electron coefficient；
(4) according to the result of (1), (2) and (3), the incident optical power offset needed for charging current is calculated, J=I is made, obtains p
(λ)；
(5) LED array and fiber coupling system are designed.
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| CN103761417A (en) * | 2013-12-24 | 2014-04-30 | 兰州空间技术物理研究所 | Calculating method for surface potential of geostationary orbit satellite |
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| JP5227136B2 (en) * | 2008-10-16 | 2013-07-03 | パナソニック株式会社 | 3D space light distribution simulator, 3D space light distribution simulation method, 3D space light distribution simulation program |
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| CN103761417A (en) * | 2013-12-24 | 2014-04-30 | 兰州空间技术物理研究所 | Calculating method for surface potential of geostationary orbit satellite |
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| 卫星表面放电效应模拟器研制;高士峰;《航天器环境工程》;20121015;第29卷(第5期);全文 * |
| 航天材料紫外辐射效应地面模拟试验方法;沈自才;《航天器环境工程》;20150215;第32卷(第1期);全文 * |
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