CN103761417A - Calculating method for surface potential of geostationary orbit satellite - Google Patents

Calculating method for surface potential of geostationary orbit satellite Download PDF

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CN103761417A
CN103761417A CN201310722831.5A CN201310722831A CN103761417A CN 103761417 A CN103761417 A CN 103761417A CN 201310722831 A CN201310722831 A CN 201310722831A CN 103761417 A CN103761417 A CN 103761417A
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current
satellite surface
secondary electron
plasma
electron
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CN103761417B (en
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陈益峰
李得天
秦晓刚
杨生胜
史亮
王俊
柳青
汤道坦
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Lanzhou Institute of Physics of Chinese Academy of Space Technology
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Lanzhou Institute of Physics of Chinese Academy of Space Technology
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Abstract

The invention discloses a calculating method for surface potential of a geostationary orbit satellite. The calculating method includes: acquiring space environment parameters of the surface of the geostationary orbit satellite during the geomagnetism substorm period, determining the energy distribution of said space according to the space environment parameters; determining the charge current of a plasma at the surface of the satellite according to the energy distribution; determining the sum of emission currents of a secondary electron and a backscattered electron according to the material parameters of the surface of the satellite; calculating the surface potential of the satellite according to the sum of emission currents of the secondary electron and the backscattered electron. The calculating method for the surface potential of the geostationary orbit satellite comprehensives considers the charged factors of the satellite surface under the plasma environment during geomagnetism substorm period, wherein the charged factors include the charge current of the plasma and the sum of emission currents of the secondary electron and the backscattered electron, so that the accuracy is high.

Description

Geo-synchronous orbit satellite surface potential computing method
Technical field
The present invention relates to spationautics field, relate in particular to a kind of geo-synchronous orbit satellite surface potential computing method.
Background technology
When solar flare occurs, solar wind and magnetic field of the earth interact and can produce ground magnetic substorm phenomenon, now at geostationary orbit, understand produce power at the large flux plasma of high energy, can make the satellite that operates in geostationary orbit that serious surface charging effect occurs.Surface charging effect may produce the electromagnetic pulse with instantaneous high pressure and heavy current feature, causes the responsive electronic devices and components on satellite to damage and assembly misoperation, and the communication on jammer satellite and ground, even causes the failure of satellite mission.
Because the energy of electronics in space plasma and ion is identical, and mass of ion is electron mass 1800 times, therefore electronic movement velocity is greater than ion motion speed, causes electronics charging current much larger than gas current, and therefore satellite surface material is by electronegative position.But in satellite surface charging process, material surface negative potential will suppress space electronic charging current, and strengthen in ion and electric current, material surface secondary electron and backscattered electron transmitting are exerted an influence simultaneously, therefore satellite surface charging process is very complicated.
Document " Yan Dekui; the charged study on assessing method of GEO ground magnetic substorm multi-energy Electron; < < Spacecraft Environment Engineering > > " has been introduced GEO track ground magnetic substorm environment lower surface charged effect appraisal procedure, and adopts engineering software and ground experiment to assess Spacecraft charging current potential.But the software for calculation adopting in document is not considered the impact of surface potential on Space Particle charging current and secondary electron emissions, in its computation process, space plasma energy is set to single and two energy points simultaneously, cannot truly reflect the spectral distribution of space plasma, cause it to calculate poor accuracy.
Summary of the invention
Provide hereinafter about brief overview of the present invention, to the basic comprehension about some aspect of the present invention is provided.Should be appreciated that this general introduction is not about exhaustive general introduction of the present invention.It is not that intention is determined key of the present invention or pith, and nor is it intended to limit the scope of the present invention.Its object is only that the form of simplifying provides some concept, using this as the preorder in greater detail of discussing after a while.
The invention provides a kind of geo-synchronous orbit satellite surface potential computing method, comprising:
Obtain the space environment parameter on geo-synchronous orbit satellite surface during ground magnetic substorm, and according to described space environment parameter, determine the energy distribution in described space;
According to described energy distribution, determine the charging current of the plasma of described satellite surface;
According to the material parameter of satellite surface determine the secondary electron of satellite surface and backscattered electron transmitter current and;
According to described charging current and secondary electron and backscattered electron transmitter current and, calculate described satellite surface current potential.
Geo-synchronous orbit satellite surface potential computing method provided by the invention, consider during ground magnetic substorm the charged factor of satellite surface under plasma environment, comprise the secondary electron of charging current, satellite surface of plasma and backscattered electron transmitter current and, there is higher accuracy.Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the process flow diagram of a kind of embodiment of geo-synchronous orbit satellite surface potential computing method provided by the invention.
Fig. 2 is the energy profile of geo-synchronous orbit satellite surface potential computing method applying plasma provided by the invention.
Fig. 3 is the variation diagram of geo-synchronous orbit satellite surface potential computing method applying plasma charging current year provided by the invention surface potential.
Fig. 4 is kapton material secondary electronics and backscattered electron emission ratio figure in geo-synchronous orbit satellite surface potential computing method provided by the invention.
Embodiment
For making object, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.The element of describing in an accompanying drawing of the present invention or a kind of embodiment and feature can combine with element and feature shown in one or more other accompanying drawing or embodiment.It should be noted that for purposes of clarity, in accompanying drawing and explanation, omitted expression and the description of unrelated to the invention, parts known to persons of ordinary skill in the art and processing.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not paying creative work, belongs to the scope of protection of the invention.
With reference to figure 1, the present embodiment provides a kind of geo-synchronous orbit satellite surface potential computing method, comprising:
Step S101, obtains the space environment parameter on geo-synchronous orbit satellite surface during ground magnetic substorm, and according to described space environment parameter, determines the energy distribution in described space;
Step S102, determines the charging current of the plasma of described satellite surface according to described energy distribution;
Step S103, according to the material parameter of satellite surface determine the secondary electron of satellite surface and backscattered electron transmitter current and;
Step S104, according to described charging current and secondary electron and backscattered electron transmitter current and, calculate described satellite surface current potential.
Further, in step S101, space environment parameter comprises energy of plasma and plasma density, and its energy distribution can adopt maxwell boltzmann distribution to be described, specific as follows:
f ( E ) = n &times; 2 &pi; 1 / 2 ( kT ) 3 / 2 &times; E 1 / 2 &times; exp ( - E kT ) , - - - ( 1 )
Wherein, f (E)for energy distribution, n is plasma density, and n is plasma energy, and k is Boltzmann constant, and T is the corresponding plasma temperature of plasma power spectrum maximal value.
As the optional embodiment of one, during ground magnetic substorm, the space plasma energy of geostationary orbit is generally 0.1-100keV, and therefore the value of E is 0.1-100keV, and plasma density n is 10 6m -3, T gets 4.83keV, above-mentioned parameter is brought into (1) formula, can obtain energy of plasma and distribute, as shown in Figure 2.
Further, in step S102, the charging current of plasma comprises electronics charging current and ion charging electric current, and wherein electronics charging current is determined by following formula:
J eV = &Integral; v E max q . f ( E ) 2 &times; ( 2 k T e &pi; m e ) 1 / 2 &times; exp ( qV k T e ) , - - - ( 2 )
Wherein, J eVfor electronics charging current, q is the quantity of electric charge, T efor the electron temperature in plasma, m efor electron mass, V is satellite surface current potential, E maxfor energy corresponding to maximum charging current;
Ion charging electric current is determined by following formula:
J iV = &Integral; E min E max q . f ( E ) 2 &times; ( 2 k T i &pi; m i ) 1 / 2 &times; ( 1 - qV k T i ) , - - - ( 3 )
Wherein, J iVfor ion charging electric current, q is the quantity of electric charge, and Ti is the ion temperature in plasma, m ifor mass of ion, V is satellite surface current potential, f (E)for energy distribution, E maxfor energy corresponding to maximum charging current, E minfor energy corresponding to minimum charge current.
Preferably, electron mass m ebe 9.1 × 10 -31kg, mass of ion m ibe 1.68 × 10 -27kg, quantity of electric charge q is 1.69 × 10 -19kg, brings above-mentioned parameter into (2) formula and (3) formula, can analyze the charging current of plasma under different potentials.
The variation relation figure of electronics charging current and ion charging electric current please refer to Fig. 3.
Further, in step S103, the described material parameter according to satellite surface determine the secondary electron of satellite surface and backscattered electron transmitter current and, comprising:
According to material parameter, determine secondary electron yield and the backscattered electron emission ratio of satellite surface;
According to described secondary electron yield and backscattered electron emission ratio determine described secondary electron and backscattered electron transmitter current and;
Described secondary electron yield is determined by following formula:
&delta; ( E ) V = 0 E &le; - V c &times; [ exp ( - ( E + V ) / a ) - exp ( - ( E + V ) / b ] E > - V - - - ( 4 )
Wherein, δ (E) Vfor secondary electron yield, a=0.43 × E max, b=0.367 × E max, c=1.37 × δ max, δ maxfor maximum secondary electron emission coefficiency; E maxfor the corresponding incident electron energy of maximum secondary electron emission coefficiency.
Described backscattered electron emission ratio is determined by following formula:
&eta; ( E ) V = 0 E &le; - V A - B &times; exp ( - C ( E + V ) E > - V - - - ( 5 )
Wherein, η (E) Vfor backscattered electron emission ratio, A, B, C are the fitting parameter relevant to material, and according to the backscattered electron emission ratio of different materials, through type (5) carries out parameter fitting, can obtain A, B, the C value of different materials; V is satellite surface current potential.
The graph of a relation of secondary electron yield and backscattered electron emission ratio please refer to Fig. 4.
The present embodiment describes with kapton (polyimide (PI) membraneous material).
The secondary electron of Kapton material and backscattered electron emission ratio are: the corresponding incident electron energy of maximum secondary electron emission coefficiency E maxfor 0.15keV, maximum secondary electron emission coefficiency δ maxbe that 2.1, A is that 0.1, B is that 0, C is 0, above-mentioned parameter brought into (4) formula and (5) formula, can obtain secondary electron yield and the backscattered electron emission ratio of Kapton material.
Further, secondary electron and backscattered electron transmitter current and the following formula of employing are determined:
J (δ+η)V＝J eV×(δ (E)V+η (E)V)， （6）
Wherein, J (δ+η) Vfor secondary electron and backscattered electron transmitter current and, J eVfor electronics charging current, δ (E) Vfor secondary electron yield, η (E) Vfor backscattered electron emission ratio.
By (6) formula, can calculate Kapton material secondary electronics and backscattered electron transmitter current and.
In step S104, satellite surface current potential calculates based on following equation:
J V＝J eV-(J iV+J (δ+η)V)＝0， （7）
Wherein, J vfor satellite surface charging total current, J eVfor electronics charging current, J iVfor ion charging electric current, J (δ+η) Vfor secondary electron and backscattered electron transmitter current and.
(7) what formula was described is when space ion charging electric current, secondary electron and backscattered electron transmitter current are equal with electronics charging current, be that satellite surface charging current is 0 o'clock, can think that the current potential of satellite surface reaches balance, current potential is now equilibrium potential, by equation (7), calculate the V in formula, i.e. satellite surface current potential.
By experiment, do not considering under the impact of secondary electron and backscattered electron transmitting situation, can reach-40000V of the charging potential of material surface left and right, consider after secondary electron and backscattered electron transmitter current, the surperficial current potential of kapton material is-30000V that the geo-synchronous orbit satellite surface potential computing method that therefore the present embodiment provides have higher accuracy.
Geo-synchronous orbit satellite surface potential computing method provided by the invention, consider during ground magnetic substorm the charged factor of satellite surface under plasma environment, comprise the secondary electron of charging current, satellite surface of plasma and backscattered electron transmitter current and, there is higher accuracy.
In the various embodiments described above of the present invention, the sequence number of embodiment is only convenient to describe, and does not represent the quality of embodiment.Description to each embodiment all emphasizes particularly on different fields, and there is no the part of detailed description in certain embodiment, can be referring to the associated description of other embodiment.
One of ordinary skill in the art will appreciate that: all or part of step that realizes said method embodiment can complete by the relevant hardware of programmed instruction, aforesaid program can be stored in a computer read/write memory medium, this program, when carrying out, is carried out the step that comprises said method embodiment; And aforesaid storage medium comprises: various media that can be program code stored such as ROM (read-only memory) (Read-Only Memory is called for short ROM), random access memory (Random Access Memory is called for short RAM), magnetic disc or CDs.
In the embodiment such as apparatus and method of the present invention, obviously, each parts or each step reconfigure after can decomposing, combine and/or decomposing.These decomposition and/or reconfigure and should be considered as equivalents of the present invention.Simultaneously, in the above in the description of the specific embodiment of the invention, for a kind of embodiment, describe and/or the feature that illustrates can be used in same or similar mode in one or more other embodiment, combined with the feature in other embodiment, or substitute the feature in other embodiment.
Should emphasize, term " comprises/comprises " existence that refers to feature, key element, step or assembly while using herein, but does not get rid of the existence of one or more further feature, key element, step or assembly or add.
Finally it should be noted that: although described above the present invention and advantage thereof in detail, be to be understood that in the case of not exceeding the spirit and scope of the present invention that limited by appended claim and can carry out various changes, alternative and conversion.And scope of the present invention is not limited only to the specific embodiment of the described process of instructions, equipment, means, method and step.One of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use carry out with the essentially identical function of corresponding embodiment described herein or obtain process, equipment, means, method or step result essentially identical with it, that existing and will be developed future according to the present invention.Therefore, appended claim is intended to comprise such process, equipment, means, method or step in their scope.

Claims (6)

1. geo-synchronous orbit satellite surface potential computing method, is characterized in that, comprising:
Obtain the space environment parameter on geo-synchronous orbit satellite surface during ground magnetic substorm, and according to described space environment parameter, determine the energy distribution in described space;
According to described energy distribution, determine the charging current of the plasma of described satellite surface;
According to the material parameter of satellite surface determine the secondary electron of satellite surface and backscattered electron transmitter current and;
According to described charging current and secondary electron and backscattered electron transmitter current and, calculate described satellite surface current potential.
2. geo-synchronous orbit satellite surface potential computing method according to claim 1, is characterized in that, described space environment parameter comprises energy of plasma and plasma density, and described energy distribution is determined according to following formula:
f ( E ) = n &times; 2 &pi; 1 / 2 ( kT ) 3 / 2 &times; E 1 / 2 &times; exp ( - E kT ) ,
Wherein, f (E)for energy distribution, n is plasma density, and E is plasma energy, and k is Boltzmann constant, and T is the corresponding plasma temperature of plasma power spectrum maximal value.
3. geo-synchronous orbit satellite surface potential computing method according to claim 2, is characterized in that, the charging current of described plasma comprises electronics charging current and ion charging electric current, and wherein said electronics charging current is determined by following formula:
J eV = &Integral; v E max q . f ( E ) 2 &times; ( 2 k T e &pi; m e ) 1 / 2 &times; exp ( qV k T e ) ,
Wherein, J eVfor electronics charging current, q is the quantity of electric charge, T efor the electron temperature in plasma, m efor electron mass, V is satellite surface current potential, E maxfor energy corresponding to maximum charging current;
Described ion charging electric current is determined by following formula:
J iV = &Integral; E min E max q . f ( E ) 2 &times; ( 2 k T i &pi; m i ) 1 / 2 &times; ( 1 - qV k T i ) ,
Wherein, J iVfor ion charging electric current, q is the quantity of electric charge, and Ti is the ion temperature in plasma, and mi is mass of ion, and V is satellite surface current potential, f (E)for energy distribution, E maxfor energy corresponding to maximum charging current, E minfor energy corresponding to minimum charge current.
4. geo-synchronous orbit satellite surface potential computing method according to claim 3, is characterized in that, the described material parameter according to satellite surface determine the secondary electron of satellite surface and backscattered electron transmitter current and, comprising:
According to material parameter, determine secondary electron yield and the backscattered electron emission ratio of satellite surface;
According to described secondary electron yield and backscattered electron emission ratio determine described secondary electron and backscattered electron transmitter current and;
Described secondary electron yield is determined by following formula:
&delta; ( E ) V = 0 E &le; - V c &times; [ exp ( - ( E + V ) / a ) - exp ( - ( E + V ) / b ] E > - V
Wherein, δ (E) Vfor secondary electron yield, a=0.43 × E max, b=0.367 × E max, c=1.37 × δ max, δ maxfor maximum secondary electron emission coefficiency; E maxfor the corresponding incident electron energy of maximum secondary electron emission coefficiency;
Described backscattered electron emission ratio is determined by following formula:
&eta; ( E ) V = 0 E &le; - V A - B &times; exp ( - C ( E + V ) E > - V
Wherein, η (E) Vfor backscattered electron emission ratio, A, B, C determine according to material surface parameter, and V is satellite surface current potential.
5. geo-synchronous orbit satellite surface potential computing method according to claim 4, is characterized in that, described secondary electron and backscattered electron transmitter current and the following formula of employing are determined:
J (δ+η)V＝J eV×(δ (E)V+η (E)V)，
Wherein, J (δ+η) Vfor secondary electron and backscattered electron transmitter current and, J eVfor electronics charging current, δ (E) Vfor secondary electron yield, η (E) Vfor backscattered electron emission ratio.
6. geo-synchronous orbit satellite surface potential computing method according to claim 5, is characterized in that, described satellite surface current potential calculates based on following equation:
J V＝J eV-(J iV+J (δ+η)V)＝0，
Wherein, J vfor satellite surface charging total current, J eVfor electronics charging current, J iVfor ion charging electric current, J (δ+η) Vfor secondary electron and backscattered electron transmitter current and.
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CN104732094A (en) * 2015-03-30 2015-06-24 北京空间飞行器总体设计部 Ultraviolet LED based spacecraft surface charging protective method
CN105717377A (en) * 2014-12-03 2016-06-29 中国科学院空间科学与应用研究中心 Satellite difference potential measuring apparatus
CN111339676A (en) * 2020-03-10 2020-06-26 中国科学院国家空间科学中心 Near-earth space environment comprehensive data analysis system
CN111703593A (en) * 2020-06-28 2020-09-25 国家卫星气象中心(国家空间天气监测预警中心) Early warning method and early warning system for surface charging effect of geosynchronous orbit satellite

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Cited By (11)

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Publication number Priority date Publication date Assignee Title
CN104239619A (en) * 2014-09-03 2014-12-24 兰州空间技术物理研究所 Calculation method of ion distribution characteristic of spacecraft and charging effect simulation method
CN104239619B (en) * 2014-09-03 2017-04-05 兰州空间技术物理研究所 A kind of computational methods and charged effect emulation mode of spacecraft ion distribution characteristic
CN104239623A (en) * 2014-09-05 2014-12-24 兰州空间技术物理研究所 Method for obtaining satellite surface potential based on multi-time-scale particle push
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CN105717377A (en) * 2014-12-03 2016-06-29 中国科学院空间科学与应用研究中心 Satellite difference potential measuring apparatus
CN105717377B (en) * 2014-12-03 2019-01-22 中国科学院空间科学与应用研究中心 A kind of measuring device of satellite difference current potential
CN104732094A (en) * 2015-03-30 2015-06-24 北京空间飞行器总体设计部 Ultraviolet LED based spacecraft surface charging protective method
CN104732094B (en) * 2015-03-30 2018-04-10 北京空间飞行器总体设计部 A kind of spececraft charging means of defence based on ultraviolet LED
CN111339676A (en) * 2020-03-10 2020-06-26 中国科学院国家空间科学中心 Near-earth space environment comprehensive data analysis system
CN111703593A (en) * 2020-06-28 2020-09-25 国家卫星气象中心(国家空间天气监测预警中心) Early warning method and early warning system for surface charging effect of geosynchronous orbit satellite
CN111703593B (en) * 2020-06-28 2021-08-17 国家卫星气象中心(国家空间天气监测预警中心) Early warning method and early warning system for surface charging effect of geosynchronous orbit satellite

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