CN104716420B - Frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode - Google Patents
Frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode Download PDFInfo
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Abstract
The invention discloses a kind of frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode, belong to field of antenna, the antenna mainly includes：Servo circuit, programmable voltage source, rectangular waveguide and double transversal PIN diode.Servo circuit is programmed control to programmable voltage source, programmable voltage source output is met the plurality of voltages that programming is required；Rectangular waveguide uses coaxial feeding, and Guide of Wide Wall cuts 8 64 gaps, and one double transversal PIN diode of installation at each gap；The plurality of voltages of programmable voltage source output is connected with double transversal PIN diode, control the different piece conducting and cut-off of double transversal PIN diode, length, width and the offset distance of Waveguide slot are controlled in this way, realize the frequency reconfigurable Waveguide slot antenna of PLC technology.The present invention realizes the frequency reconfigurable Waveguide slot antenna of PLC technology.
Description
Technical field
The present invention relates to field of semiconductor devices and Waveguide slot antenna field, more particularly to realized using semiconductor devices
The frequency reconfigurable Waveguide slot antenna of PLC technology.
Background technology
Waveguide slot antenna is made by being cracked on wave guide wall, and it is by waveguide or resonator feed, in gap
Upper excitation produces electromagnetic field, and to a kind of antenna of space radiation electromagnetic wave.Waveguide slot antenna has compact conformation, and power holds
Amount is big, easy for installation, and radiation efficiency is high, and feeder loss is low, and small volume is lightweight, easily realizes the excellent of high-gain, Sidelobe etc.
Point, occupies critical positions in modern electronics industry, is widely used in the every field such as ground, carrier-borne, airborne, navigation.
The unique physical property of plasma, solving, antenna is stealthy with having very big development potentiality in terms of mutual coupling,
Turn into the focus of research.Plasma passes through the coupling between the charged particle and additional electromagnetic wave that can wherein move freely
The transmission to electromagnetic wave signal is realized in resonance, so that the important component as antenna system is received and transmission signal.It is a kind of
The concept of the brand-new silicon substrate plasma antenna with good stealth and quick dynamic reconfigurable is suggested, and has been passed through
Test preliminary identification.
Because conventional waveguide slot antenna can only realize a kind of directional diagram, and can only can maximally effective work in a frequency band
Make.Frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode combines Waveguide slot antenna and silicon substrate plasma
The many merits of antenna, can be operated in multiband, be with a wide range of applications, and have important answer in terms of civil and military
With value
The content of the invention
The present invention seeks to solve the problems, such as the frequency reconfigurable of Waveguide slot antenna there is provided one kind to be based on double transversal PIN bis-
The frequency reconfigurable Waveguide slot antenna of pole pipe, by control double transversal PIN diode different intrinsic silicon areas conducting with cut
Only, and then length, width and the offset distance of Waveguide slot are controlled, realizes the frequency reconfigurable Waveguide slot day of PLC technology
Line.
The purpose of the present invention is achieved through the following technical solutions：
Frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode, including：Servo circuit, programmable voltage
Source and rectangular waveguide, cut n gap, n span is each placement one in 8-64, each gap in Wide Wall of Rectangular Waveguide
Double transversal PIN diode (shared n), the size of the double transversal PIN diode and rectangular waveguide gap it is equal in magnitude；It is double
Horizontal PIN diode includes monocrystalline substrate, insulating buried layer, intrinsic silicon area and surface passivation layer successively by bottom to top layer,
The corner of intrinsic silicon area and surface passivation layer is provided with P injection regions or N injection regions, and identical injection region is diagonally arranged, in each note
Enter area surface and be respectively arranged with a metal electrode, have 4 electrodes, wherein insulating buried layer is aluminium nitride.Servo circuit pair can
Program voltage source is programmed control, programmable voltage source output is met the 4n roads voltage that programming is required；Programmable voltage source
4n metal electrode of the 4n roads voltage of output respectively with n double transversal PIN diode in rectangular waveguide gap is respectively connected with,
Control the conducting and cut-off of the different intrinsic silicon areas of double transversal PIN diode.
Described rectangular waveguide uses coaxial feeding, and n (8-64) individual gap is cut in Guide of Wide Wall, and gap length is uniform
Or non-uniform Distribution is in Guide of Wide Wall center line both sides, each gap and is installed parallel to the long rib of rectangular waveguide at each gap
One double transversal PIN diode.
The intrinsic silicon area of described double transversal PIN diode (size of top view and each several part is as shown in Figure 3) and surface
The corner of passivation layer is respectively separated provided with P injection regions or N injection regions, and identical injection region is diagonally arranged, so double transversal PIN
The horizontal PIN diode in equivalent to one, each side of diode, 4 sides are equivalent to 4 horizontal PIN diodes.As horizontal PIN bis-
When pole pipe two ends add forward bias voltage (i.e. P areas voltage is higher than N areas voltage certain numerical value), horizontal PIN diode conducting；Work as horizontal stroke
When adding reverse bias voltage (i.e. N areas voltage is more than or equal to P areas voltage) to PIN diode two ends, horizontal PIN diode cut-off.
The constant current that the horizontal PIN diode of forward bias has certain numerical value flows through, and now intrinsic silicon area contains a number of easy
In the carrier of motion, when intrinsic silicon area carrier concentration reaches 1018cm-3Or more when, now intrinsic silicon area has metalloid
Conductive characteristic.
The 4n roads voltage of programmable voltage source output respectively with 4 common 4n of electrode in n double transversal PIN diode
Individual electrode is connected respectively.
Separation layer is provided between described double transversal PIN diode and Waveguide slot, separation layer is silica.
Described programmable voltage source by exporting the voltage of different value, control double transversal PIN diode it is different intrinsic
The conducting and cut-off of silicon area, when the different intrinsic silicon area conductings of double transversal PIN diode, the intrinsic silicon area of turning part has
Metalloid characteristic, equivalent into metal, now the intrinsic silicon area of turning part is placed among the gap of waveguide just as piece of metal, when
During the different intrinsic silicon area cut-offs of double transversal PIN diode, the intrinsic silicon area of barrier portion is exactly generic media, for electromagnetic wave
For be transparent, the size in gap will not be changed, therefore, control double transversal PIN diode different intrinsic silicon areas conducting
With cut-off, so as to control the length in gap, width and offset distance, change antenna structure resonant cavity, realize that antenna frequencies can
Reconstruct.
The beneficial effect for the technical scheme that the present invention is provided is：
The above-mentioned frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode can be according to the need of communication system
Will, by real-time online programming Control of the servo circuit to programmable voltage source output voltage, control double transversal PIN diode
The conducting and cut-off of different intrinsic silicon areas, so as to control Waveguide slot length, width and offset distance, realize frequency reconfigurable ripple
Lead slot antenna.So as to reduce the complexity of traditional frequency reconfigurable Waveguide slot antenna design, reduction communication system into
This, and can be according to the real-time working frequency for changing Waveguide slot antenna the need for communication system.
Brief description of the drawings
Fig. 1 is the 3-D solid structure schematic diagram of double transversal PIN diode.
Fig. 2 is the side view of double transversal PIN diode.
Fig. 3 is the top view of double transversal PIN diode.
Fig. 4 is servo circuit and programmable voltage source.
Fig. 5 is the waveguide 3 D stereo schematic diagram for having cut gap.
Fig. 6 is the waveguide top view for having cut gap.
Fig. 7 is the system knot for the frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode that the present invention is provided
Composition.
Fig. 8 is the frequency reconfigurable Waveguide slot based on double transversal PIN diode that Wide Wall of Rectangular Waveguide cuts 8 gaps
The system construction drawing of antenna.
Embodiment
The present invention is described in further details below in conjunction with the accompanying drawings, but the implementation of the present invention is not limited to this.
Embodiment 1：
As shown in fig. 7, this frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode, it includes servo
Circuit 1, programmable voltage source 2, rectangular waveguide 3.N gap is cut in the wide wall of rectangular waveguide 3, n span is 8-64 (ginsengs
See Fig. 5 and Fig. 6), a double transversal PIN diode 4, the wherein top view of double transversal PIN diode 4 are respectively placed in each gap
As shown in Figure 3.
In order to express easily, assume only to cut 8 gap 301-308 in Guide of Wide Wall in this example, as shown in figure 8, ripple
It is λ/2 to lead the fore-and-aft distance between long rib of the gap parallel to rectangular waveguide of wide wall, gap, and wherein λ is waveguide wavelength；In seam
One double transversal PIN diode 4 of each installation at gap 301-308, the length of double transversal PIN diode 4 and wide respectively equal to correspondence seam
The length and width of gap；Rectangular waveguide uses coaxial feeding, and its one end is used to feed, and one end sets reflecting plate.
As shown in Figure 1 to Figure 3, double transversal PIN diode 4 includes monocrystalline substrate 41, insulating buried layer 42, intrinsic silicon area
43rd, P injection regions (P areas) 441 and 442, N injection regions (N areas) 451 and 452, surface passivation layer 46 and metal electrode 47.
Double transversal PIN diode 4 can be equivalent to 4 horizontal PIN diodes, and the size of its each several part is as shown in Figure 3.Its
In, by P areas 441, intrinsic silicon area I1The PIN diode constituted with N areas 451, a length of L1+L2+L3, a width of W1；By P areas 442, intrinsic
Silicon area I2The PIN diode constituted with N areas 452, a length of L1+L2+L3, a width of W3；By P areas 441, intrinsic silicon area I3With the structure of N areas 452
Into PIN diode, a length of W1+W2+W3, a width of L1；By P areas 442, intrinsic silicon area I4The PIN diode constituted with N areas 451, it is long
For W1+W2+W3, a width of L3。
When each transverse direction PIN diode two ends add forward bias voltage in double transversal PIN diode 4, (i.e. P areas voltage is high
When N areas voltage certain numerical value) horizontal PIN diode conducting；When each horizontal PIN diode two ends add reverse bias voltage
(when i.e. N areas voltage is more than or equal to P areas voltage) horizontal PIN diode cut-off.The horizontal PIN diode of forward bias has a fixed number
The constant current of value flows through, and now intrinsic silicon area contains a number of carrier for being easy to motion, when intrinsic silicon area carrier
Concentration reaches 1018cm-3Or more when, now intrinsic silicon area has the conductive characteristic of metalloid.
Servo circuit 1 is programmed control to programmable voltage source 2, the output of programmable voltage source 2 is met programming and requires
Plurality of voltages；The plurality of voltages that programmable voltage source 3 is exported is connected (referring to Fig. 4) with corresponding double transversal PIN diode 4,
The output voltage V of programmable voltage source 21,P1With the first P injection regions (P of first double transversal PIN diode 4 at gap 301
Area) 441 connected, voltage V1,P2It is connected with the 2nd P injection regions (P areas) 442 of the double transversal PIN diode 4 at gap 301, electricity
Press V1,N1It is connected with the first N injection regions (N areas) 451 of the double transversal PIN diode 4 at gap 301, voltage V1,N2With gap 301
The 2nd N injection regions (N areas) 452 of the double transversal PIN diode 4 at place are connected.V1,P1With V1,P2Not necessarily equal and V1,N1With V1,N2
Not necessarily equal, the connection of other double transversal PIN diodes is analogized by this.By controlling the difference of double transversal PIN diode 4 originally
Levy silicon area I1、I2、I3And I4Conducting with cut-off realize, the gap 301-308 of control rectangle waveguide 3 length, width and skew
Distance, specific change, in lower section narration.Realize the frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode.
In order to express easily, if all Waveguide slot 301-308 length and respectively equal, all double transversal PIN bis- of width
The length of pole pipe 4 and wide difference are equal.Electromagnetic wave propagation direction in waveguide, travels to 308,1 pair of servo circuit may be programmed along 301
Voltage source 2 is programmed control, programmable voltage source 2 is exported 32 road voltage [V1,P1:V1,P2]-[V8,P1:V8,P2] and [V1,N1:
V1,N2]-[V8,N1:V8,N2].By taking the double transversal PIN diode 4 being placed at the gap 301 of rectangular waveguide 3 as an example, to illustrate that its P is noted
Enter the voltage swing relation of area (P areas) 441-442 and N injection regions (N areas) 451-452 Top electrodes 47.Programmable voltage source 2 is exported
Voltage V1,P1It is connected with the P injection regions (P areas) 441 of the double transversal PIN diode 4 at gap 301, voltage V1,P2At gap 301
Double transversal PIN diode 4 P injection regions (P areas) 442 be connected, voltage V1,N1With the double transversal PIN diode 4 at gap 301
N injection regions (N areas) 451 be connected, voltage V1,N2With the N injection regions (N areas) 452 of the double transversal PIN diode 4 at gap 301
It is connected.If V1,P1>V1,N1, V1,P1>V1,N2, V1,P2>V1,N2And V1,P2>V1,N1, now double transversal PIN diode 4 all turn on, its
I in intrinsic silicon area 461、I2、I3And I4Part has the conductive characteristic of metalloid, I5Conduction of the part without metalloid is special
Property, now the equivalent length in gap 301 is L2, equivalent width is W2.It is similar to the above, make the gap 302-308 of rectangular waveguide 3
The voltage of P injection regions (P areas) 441-442 and N injection regions (N areas) 451-452 Top electrodes 47 of the double transversal PIN diode 4 at place
Also above-mentioned relation is all met, now the double transversal PIN diode 4 at the 302-308 of gap is all turned on, gap 302-308's
Equivalent length is all L2, equivalent width is all W2, now Waveguide slot antenna working frequency is f1, and the resonant cavity of f1 and waveguide has
Close, and resonant cavity is relevant with the length and width and offset distance of Waveguide slot.
If now keeping, other conditions are constant, and servo circuit 1 is programmed control to programmable voltage source 2, makes may be programmed
Voltage source 2 exports 32 road voltage [V1,P1:V1,P2]-[V8,P1:V8,P2] and [V1,N1:V1,N2]-[V8,N1:V8,N2].To be placed on rectangle
Exemplified by double transversal PIN diode 4 at the gap 301 of waveguide 3, to illustrate its P injection regions (P area) 441-442 and N injection regions (N
Area) 451-452 Top electrodes 47 voltage swing relation.The output voltage V of programmable voltage source 21,P1With the double transversal at gap 301
The P injection regions (P areas) 441 of PIN diode 4 are connected, voltage V1,P2Injected with the P of the double transversal PIN diode 4 at gap 301
Area (P areas) 442 is connected, voltage V1,N1It is connected with the N injection regions (N areas) 451 of the double transversal PIN diode 4 at gap 301, electricity
Press V1,N2It is connected with the N injection regions (N areas) 452 of the double transversal PIN diode 4 at gap 301.If V1,P1≤V1,N1, V1,P1>
V1,N2, V1,P2>V1,N2And V1,P2>V1,N1, now double transversal PIN diode 4 is partially ON, the I in its intrinsic silicon area 462、I3And
I4Part has the conductive characteristic of metalloid, I1And I5Part does not have the conductive characteristic of metalloid, the equivalent length in gap 301
For L2, equivalent width is W1+W2.It is similar to the above, make double transversal PIN diode 4 at the gap 302-308 of rectangular waveguide 3
The voltage of P injection regions (P areas) 441-442 and N injection regions (N areas) 451-452 Top electrodes 47 also all meets above-mentioned relation, now stitches
Double transversal PIN diode 4 at gap 302-308 is partially ON, and gap 302-308 equivalent length is L2, equivalent width is W1+
W2, gap 301-308 offset distance also changed, and now Waveguide slot antenna working frequency is f2, f2 and waveguide
Resonant cavity is relevant, and resonant cavity is relevant with the length and width and offset distance of Waveguide slot.
Therefore, by implementation programming Control of the servo circuit 1 to programmable voltage source 2, so as to control at the 301-308 of gap
Double transversal PIN diode 4 all turn on or partially ON, realize the frequency reconfigurable of Waveguide slot antenna.
Embodiment 2：
As shown in fig. 7, this frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode, it includes servo
Circuit 1, programmable voltage source 2, rectangular waveguide 3.N gap is cut in the wide wall of rectangular waveguide 3, n span is 8-64 (ginsengs
See Fig. 5 and Fig. 6), a double transversal PIN diode 4, the wherein top view of double transversal PIN diode 4 are respectively placed in each gap
As shown in Figure 3.In order to express easily, assume only to cut 8 gap 301-308 in Guide of Wide Wall in this example, as shown in Figure 8.
The connected mode and embodiment 1 of frequency reconfigurable Waveguide slot antenna each several part based on double transversal PIN diode are complete in this
It is exactly the same.
In order to express easily, if all Waveguide slot 301-308 length and respectively equal, all double transversal PIN bis- of width
The length of pole pipe 4 and wide difference are equal.Electromagnetic wave propagation direction in waveguide, travels to 308,1 pair of servo circuit may be programmed along 301
Voltage source 2 is programmed control, programmable voltage source 2 is exported 32 road voltage [V1,P1:V1,P2]-[V8,P1:V8,P2] and [V1,N1:
V1,N2]-[V8,N1:V8,N2].By taking the double transversal PIN diode 4 being placed at the gap 301 of rectangular waveguide 3 as an example, to illustrate that its P is noted
Enter the voltage swing relation of area (P areas) 441-442 and N injection regions (N areas) 451-452 Top electrodes 47.Programmable voltage source 2 is exported
Voltage V1,P1It is connected with the P injection regions (P areas) 441 of the double transversal PIN diode 4 at gap 301, voltage V1,P2At gap 301
Double transversal PIN diode 4 P injection regions (P areas) 442 be connected, voltage V1,N1With the double transversal PIN diode 4 at gap 301
N injection regions (N areas) 451 be connected, voltage V1,N2With the N injection regions (N areas) 452 of the double transversal PIN diode 4 at gap 301
It is connected.If V1,P1>V1,N1, V1,P1>V1,N2, V1,P2>V1,N2And V1,P2>V1,N1, now double transversal PIN diode 4 all turn on, its
I in intrinsic silicon area 461、I2、I3And I4Part has the conductive characteristic of metalloid, I5Conduction of the part without metalloid is special
Property, now the equivalent length in gap 301 is L2, equivalent width is W2.It is similar to the above, make the gap 302-308 of rectangular waveguide 3
The voltage of P injection regions (P areas) 441-442 and N injection regions (N areas) 451-452 Top electrodes 47 of the double transversal PIN diode 4 at place
Also above-mentioned relation is all met, now the double transversal PIN diode 4 at the 302-308 of gap is all turned on, gap 302-308's
Equivalent length is all L2, equivalent width is all W2, now Waveguide slot antenna working frequency is f1, and the resonant cavity of f1 and waveguide has
Close, and resonant cavity is relevant with the length and width and offset distance of Waveguide slot.
If now keeping, other conditions are constant, and servo circuit 1 is programmed control to programmable voltage source 2, makes may be programmed
Voltage source 2 exports 32 road voltage [V1,P1:V1,P2]-[V8,P1:V8,P2] and [V1,N1:V1,N2]-[V8,N1:V8,N2].To be placed on rectangle
Exemplified by double transversal PIN diode 4 at the gap 301 of waveguide 3, to illustrate its P injection regions (P area) 441-442 and N injection regions (N
Area) 451-452 Top electrodes 47 voltage swing relation.The output voltage V of programmable voltage source 21,P1With the double transversal at gap 301
The P injection regions (P areas) 441 of PIN diode 4 are connected, voltage V1,P2Injected with the P of the double transversal PIN diode 4 at gap 301
Area (P areas) 442 is connected, voltage V1,N1It is connected with the N injection regions (N areas) 451 of the double transversal PIN diode 4 at gap 301, electricity
Press V1,N2It is connected with the N injection regions (N areas) 452 of the double transversal PIN diode 4 at gap 301.If V1,P1＞ V1,N1, V1,P1≤
V1,N2, V1,P2>V1,N2And V1,P2>V1,N1, now double transversal PIN diode 4 is partially ON, the I in its intrinsic silicon area 461、I2And
I4Part has the conductive characteristic of metalloid, I3And I5Part does not have the conductive characteristic of metalloid, the equivalent length in gap 301
For L1+L2, equivalent width is W2.It is similar to the above, make double transversal PIN diode 4 at the gap 302-308 of rectangular waveguide 3
The voltage of P injection regions (P areas) 441-442 and N injection regions (N areas) 451-452 Top electrodes 47 also all meets above-mentioned relation, now stitches
Double transversal PIN diode 4 at gap 302-308 is partially ON, and gap 302-308 equivalent length is L1+L2, equivalent width is
W2, now Waveguide slot antenna working frequency is f3, and f3 is relevant with the resonant cavity of waveguide, and the length of resonant cavity and Waveguide slot,
Wide and offset distance is relevant.
Therefore, by implementation programming Control of the servo circuit 1 to programmable voltage source 2, so as to control at the 301-308 of gap
Double transversal PIN diode 4 all turn on or partially ON, realize the frequency reconfigurable of Waveguide slot antenna.
Embodiment 3：
Servo circuit 1 is programmed control to programmable voltage source 2, the output of programmable voltage source 2 is met programming and requires
Plurality of voltages；The plurality of voltages that programmable voltage source 3 is exported is connected with corresponding double transversal PIN diode 4, controls double transversal
The different piece of PIN diode 4 is turned on ending, in this way the gap 301-308 of control rectangle waveguide 3 length, width
Degree and offset distance, thinking that can be as described above are extended, and other can be achieved different based on the poles of double transversal PIN bis-
The frequency reconfigurable Waveguide slot antenna of pipe.
Claims (6)
1. the frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode, it is characterised in that the antenna includes：Watch
Circuit, programmable voltage source and rectangular waveguide are taken, n gap is cut in Wide Wall of Rectangular Waveguide, n span is 8-64, often
Respectively place a double transversal PIN diode in individual gap, the size of the double transversal PIN diode and rectangular waveguide gap it is big
It is small equal；Double transversal PIN diode includes monocrystalline substrate, insulating buried layer, intrinsic silicon area and surface successively by bottom to top layer
Passivation layer, P injection regions or N injection regions are provided with the corner of intrinsic silicon area and surface passivation layer, and identical injection region is P areas or N
Area is diagonally arranged, a metal electrode is respectively arranged with each injection region surface, and each double transversal PIN diode has 4
Electrode；Servo circuit is programmed control to programmable voltage source, programmable voltage source output is met the 4n roads that programming is required
Voltage；4n of the 4n roads voltage of programmable voltage source output respectively with n double transversal PIN diode in rectangular waveguide gap is individual
Metal electrode is respectively connected with, and controls the conducting and cut-off of the different intrinsic silicon areas of each double transversal PIN diode.
2. the frequency reconfigurable Waveguide slot antenna according to claim 1 based on double transversal PIN diode, its feature exists
In described rectangular waveguide uses coaxial feeding, and the gap length in waveguide is uniform or non-uniform Distribution is in Guide of Wide Wall
Center line both sides, long rib of each gap parallel to rectangular waveguide.
3. the frequency reconfigurable Waveguide slot antenna according to claim 1 based on double transversal PIN diode, its feature exists
In the insulating buried layer in described double transversal PIN diode is aluminium nitride.
4. the frequency reconfigurable Waveguide slot antenna according to claim 1 based on double transversal PIN diode, its feature exists
In the described intrinsic silicon area of double transversal PIN diode and the corner of surface passivation layer is respectively separated provided with P injection regions or N notes
Enter area, and identical injection region is diagonally arranged, so equivalent to one, each side of double transversal PIN diode transverse direction PIN bis- poles
Pipe, 4 sides are equivalent to 4 horizontal PIN diodes；When horizontal PIN diode two ends add forward bias voltage, i.e. P areas voltage high
When N areas voltage value, horizontal PIN diode conducting；When horizontal PIN diode two ends add reverse bias voltage, i.e. N areas voltage
During more than or equal to P areas voltage, horizontal PIN diode cut-off；The horizontal PIN diode of forward bias has constant current to flow through, this
Shi Benzheng silicon areas contain the carrier for being easy to motion, when intrinsic silicon area carrier concentration need to reach 1018cm-3Or more when, now
Intrinsic silicon area has the conductive characteristic of metalloid.
5. the frequency reconfigurable Waveguide slot day based on double transversal PIN diode according to any one of Claims 1-4
Line, it is characterised in that separation layer is provided between the double transversal PIN diode and Waveguide slot, separation layer is silica.
6. the frequency reconfigurable Waveguide slot day based on double transversal PIN diode according to any one of Claims 1-4
Line, it is characterised in that the programmable voltage source controls the difference of double transversal PIN diode by exporting the voltage of different value
The conducting and cut-off of intrinsic silicon area, when the different intrinsic silicon area conductings of double transversal PIN diode, the intrinsic silicon area of turning part
With metalloid characteristic, equivalent into metal, now the intrinsic silicon area of turning part is just as working as in the gap that piece of metal is placed on waveguide
In, when the different intrinsic silicon area cut-offs of double transversal PIN diode, the intrinsic silicon area of barrier portion is exactly generic media, for
It is transparent for electromagnetic wave, the size in gap will not be changed, therefore, controls the different intrinsic silicon areas of double transversal PIN diode
Conducting and cut-off, so as to control the length in gap, width and offset distance, realize antenna frequencies restructural.
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| CN201510165487.3A CN104716420B (en) | 2015-04-08 | 2015-04-08 | Frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode |
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| CN201510165487.3A CN104716420B (en) | 2015-04-08 | 2015-04-08 | Frequency reconfigurable Waveguide slot antenna based on double transversal PIN diode |
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| CN104716420B true CN104716420B (en) | 2017-10-17 |
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| CN107026327B (en) * | 2017-03-13 | 2020-01-10 | 北京航空航天大学 | Half-mode substrate integrated waveguide leaky-wave antenna |
| CN108711671B (en) * | 2018-04-25 | 2020-07-28 | 南京航空航天大学 | Common-caliber frequency reconfigurable on-chip slot array antenna and use method |
| CN109374987B (en) * | 2018-09-30 | 2021-07-13 | 四川大学 | Electromagnetic wave induction device and switch using same |
| CN110518360B (en) * | 2019-08-14 | 2020-11-03 | 南京航空航天大学 | Slot antenna adopting double S-PIN solid plasma structure |
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| CN204516889U (en) * | 2015-04-08 | 2015-07-29 | 南开大学 | Based on the frequency reconfigurable Waveguide slot antenna of two horizontal PIN diode |
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| CN1462134A (en) * | 2002-05-31 | 2003-12-17 | 汤姆森许可贸易公司 | Improved structure of planar gap antenna |
| CN201655972U (en) * | 2010-03-23 | 2010-11-24 | 佛山市南海微波通讯设备有限公司 | Panel antenna for horizontal polarization base station |
| CN102403573A (en) * | 2011-11-09 | 2012-04-04 | 华南理工大学 | Reconfigurable waveguide mixed slot antenna based on S-PIN diode |
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