CN202308320U - Reconfigurable waveguide mixed slot antenna based on S-PIN (Silicon-Positive Intrinsic Negative) diodes - Google Patents
Reconfigurable waveguide mixed slot antenna based on S-PIN (Silicon-Positive Intrinsic Negative) diodes Download PDFInfo
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- CN202308320U CN202308320U CN2011204409029U CN201120440902U CN202308320U CN 202308320 U CN202308320 U CN 202308320U CN 2011204409029 U CN2011204409029 U CN 2011204409029U CN 201120440902 U CN201120440902 U CN 201120440902U CN 202308320 U CN202308320 U CN 202308320U
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- slit
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- pin diode
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Abstract
The utility model discloses a reconfigurable waveguide mixed slot antenna based on S-PIN (Silicon-Positive Intrinsic Negative) diodes. Eight to thirty-two slots are cut in both a waveguide wide wall and a waveguide narrow wall of a main body rectangular waveguide of the antenna and an S-PIN diode is installed in each of the slots. When the antenna works, the S-PIN diodes of the three waveguide walls which are unnecessary to generate radiation are biased in the forward direction to form a metal-like thin layer so as to enable all the slots in the waveguide walls to be closed. Radiation of the antenna is generated by a slot array on another waveguide wall and strong radiation can be generated in the required direction. By controlling the biased voltages of the S-PIN diodes, onmi-directional scanning of the antenna can be realized, and when the biased voltages of all the diodes are withdrawn, omni-directional radiation can be realized. The horizontal plane of the scanning wave beam of the antenna is wide and the vertical plate of the scanning wave beam of the antenna is narrow; the radiation efficiency is high; the antenna radiation pattern is reconfigurable; and the reconfigurable waveguide mixed slot antenna can be freely switched among the working modes of omni-directional radiation, directional radiation and omni-direction scanning.
Description
Technical field
The utility model relates to solid plasma body technique and Waveguide slot antenna technology, particularly relates to the waveguide mixing slot antenna that utilizes solid state plasma to realize directional diagram reconstructable.
Background technology
Waveguide slot antenna is to process through on metal waveguide, cracking, and the form of cracking generally has Guide of Wide Wall longitudinal joint, Guide of Wide Wall inclined slot, Narrow Wall of Waveguide wall inclined slot etc. as required.Slot antenna have the leakage of radiation efficiency height, energy less, bore face utilance height, compact conformation, easy for installation, advantage such as intensity is higher, wind resistance power is strong; Occupy critical positions in the electronics industry in modern times; Be widely used in every field such as ground, carrier-borne, airborne, navigation, and Waveguide slot antenna has become the preferred form of airborne radar antenna.
In recent years; In order to enrich the radar working method; Improve the performance of radar; It can be more widely used, in more New Type Radar such as three-dimensional radar, target radar, meteorological radar, early warning radar and airport surveillance radar (ASR), bring into play superperformance, some scholar has begun the research of wave guide slot array antenna train wave bundle figuration.But, be unfavorable for the realization of shaped-beam because Waveguide slot antenna lacks the phase control means.And current wave beam forming needs a plurality of waveguides to be arranged side by side, and increased antenna volume and cost.How only to realize the dynamic change of directional diagram, become the difficult problem of a bad solution with a waveguide.
Plasma antenna is an important breakthrough of field of antenna, is extension and the renewal to traditional antenna, and it has expanded the practical applications scope of plasma.The physical property that plasma is unique has very big development potentiality aspect the stealthy and mutual coupling of antenna solving, and has become the focus of research.But most at present researchs are only limited to the gaseous plasma antenna, and almost still blank to the research of solid plasma body antenna.This is because solid state plasma excites with being not easy large tracts of land, high concentration, is difficult to as gaseous plasma directly as antenna radiator.Solid state plasma generally is present in the physics semiconductor device, need not as the gaseous state plasma, to wrap up with medium tube, thereby better fail safe and stability are arranged, and can conversion idea be used.
The utility model content
The purpose of the utility model is the restructural waveguide mixing slot antenna based on the S-PIN diode is provided, and utilizes solid state plasma to realize that antenna structure dynamically changes, radiation characteristic Fast Adjustable, and the waveguide mixing slot antenna that can carry out omnidirectional's scanning.
The purpose of the utility model realizes through following technical scheme:
Based on the restructural waveguide mixing slot antenna of S-PIN diode, the main body of antenna is a rectangular waveguide, and an end of rectangular waveguide is used for feed, and the other end is provided with reflecting plate; On said rectangular waveguide Guide of Wide Wall and Narrow Wall of Waveguide wall, all cut 8-32 slit, and one of installation is used to control the S-PIN diode that the slit equivalence is opened or equivalence is closed in each slit; The equivalence of said control slit is opened or the bias voltage realization through control S-PIN diode is closed in equivalence; Slit on the Guide of Wide Wall is parallel to the long rib of rectangular waveguide, is distributed in Guide of Wide Wall center line both sides; Slit on the Narrow Wall of Waveguide wall is an inclined cut; And the incision Guide of Wide Wall, but do not cut the position, slit to the Guide of Wide Wall, cut direction has angle with the vertical direction of long rib; Open or close through S-PIN diode control slit equivalence, realize scanning of antenna pattern omnidirectional and omnidirectional radiation.
Metal contact, outer metal contact, boron-phosphorosilicate glass, P type semiconductor piece, N type semiconductor piece, intrinsic layer, oxygen buried layer and silicon substrate in the S-PIN diode of installing comprises; Interior metal contact and outer metal contact overlay on slit surfaces, be positioned on the same plane, and interior metal contact are positioned at inside the outer metal contact, and be gapped between interior metal contact and the outer metal contact, filled boron-phosphorosilicate glass in the gap; There is the said P type semiconductor piece of a circle below at interior metal contact edge, is used to provide the hole; There is the said N type semiconductor piece of a circle below of outer metal contact, is used to provide electronics; P type and N type semiconductor piece all are wrapped in by said intrinsic layer except that end face; Be close to the very thin said oxygen buried layer of one deck below the intrinsic layer; Be close to said silicon substrate below the oxygen buried layer, silicon substrate is in the bottom in slit; When interior metal contact and outside add forward bias voltage between the metal contact after; The S-PIN diode current flow, the weak free electron in the N type semiconductor will separate from atom, forms free negative electrical charge; P type semiconductor will produce the hole, and the hole can free migration; Electronics and hole are injected in the intrinsic layer, when reaching concentration when enough big, will form the thin layer of metalloid, and equivalence is for closing in the slit; When not being biased voltage, the not conducting of S-PIN diode is equivalent to only fill in the slit dielectric, and equivalence is opened for the slit; The array that the slit of all unlatchings is formed is operated in the standing wave form; Radiation at the moment antenna that scans is all produced by the gap array on one of them wall; And the slit Close All on all the other walls; Make wave beam have tangible directive property, open the slit on wide wall of adjacent waveguide and the narrow wall successively, constantly circulation just can form scanning beam; When omnidirectional radiation, then all slits are opened.
The angle of each the slit cuts direction on the Narrow Wall of Waveguide wall and the vertical direction of the long rib of rectangular waveguide is 4 °-15 °, and corner dimension is different.
The material of interior metal contact and outer metal contact is the electric conductivity good metal, thickness be 0.8
-1.5
.
Interior metal contact width be 200
, length be 14
-15
.
Gap between interior metal contact and the outer metal contact be 50
-100
; The bias voltage that is added between the inside and outside metal contact is a DC voltage-stabilizing, magnitude of voltage be 2.5
-3
.
The material of intrinsic layer is a pure silicon, thickness be 70
-90
.
The material of oxygen buried layer is a silicon dioxide, thickness be 2
-3
.
The material of silicon substrate is a pure silicon, thickness be 300
-500
.
Gap between the inside and outside metal contact is filled with boron-phosphorosilicate glass; This is a kind of silica glass of boron-doping; Thickness be 1
, can protect intrinsic layer and prevent that device from making moist.
The utility model utilizes direct voltage to excite P type semiconductor to discharge a large amount of holes, and N type semiconductor discharges a large amount of electronics, and these charge carriers are injected in the intrinsic layer, forms the plasma thin layer.But make the plasma thin layer have the good metal characteristic, sufficiently high carrier concentration must be arranged.Prove; When carrier concentration reaches
order of magnitude; The S-PIN diode just has the good metal electric conductivity, and the slit is in the equivalent state of closing fully in the time of so just making the S-PIN diode current flow.For this reason, the utility model has utilized SOI (Silicon-On-Insulator) structure, between silicon substrate and intrinsic layer, has added oxygen buried layer, and this and existing silicon technology are compatible, can reduce the operation of 13-20%.Added oxygen buried layer, and the distance between oxygen buried layer and the contact be skin depth 2-3 doubly, make charge carrier can't be diffused in the silicon substrate; Only in very thin intrinsic layer, move; Make concentration index satisfy easily, and guarantee that CONCENTRATION DISTRIBUTION is even, the dissipation when reducing microwave propagation.In order to take into account the performance of Waveguide slot antenna, the gap width between the inside and outside contact is set at maximum, promptly the diffusion length of charge carrier makes the width in slit reach maximum, with the frequency band of broadening antenna.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) with respect to traditional Waveguide slot antenna that only cracks at a wave guide wall, the utility model cracks and the S-PIN diode is installed at four wave guide walls of waveguide, need not to change the characteristic that feeding classification can realize directional diagram reconstructable.
(2) with respect to wave guide slot array antenna row, the utility model only needs a waveguide can realize the dynamic change of wave beam, need not complicated feeding network, and has reduced volume, reduced cost, and with beam scanning angle spread to 360 °.
(3) new approaches are provided for the Antenna Design of Multifunction radar: according to the working method of different application scenario switched antennas.For example be used for early warning when radar, when preventing to be locked by the enemy, antenna works in the omnidirectional antenna mode; When radar is used for keeping watch on, follows the trail of the objective or during path navigation, antenna works in the directional antenna mode; When radar is used for scouting, ferret out, switch to omnidirectional's scan mode.
Description of drawings
Fig. 1 is the structural representation of the utility model based on the restructural waveguide mixing slot antenna of S-PIN diode.
Fig. 2 is the slit vertical view that the S-PIN diode has been installed.
Fig. 3 is the profile at middle part, slit.
Embodiment
Below in conjunction with accompanying drawing the utility model is explained further details, but the execution mode of the utility model is not limited thereto.
As shown in Figure 1, restructural waveguide mixing slot antenna all respectively cuts 16 slits 1 on two Guide of Wide Wall and two Narrow Wall of Waveguide walls.The slit of Guide of Wide Wall is parallel to the long rib of rectangular waveguide; Fore-and-aft distance between the slit is
, and wherein
is guide wavelength.The cut direction of Narrow Wall of Waveguide wall has angle with the vertical direction of long rib, and (each corner dimension is different; Scope is 4-15 °); Distance between the center, slit also is
, and with certain depth incision Guide of Wide Wall.One end of waveguide is used for feed, and the other end is added with reflecting plate 2, and the gap array of unlatching is operated in the standing wave form.
Like Fig. 2, shown in Figure 3; Metal contact 3 in comprising in the slit 1; Outer metal contact 4; Gap between the inside and outside metal contact be 100
; The width of interior metal contact be 200
; Make the equivalence gap width reach 400
, to satisfy bandwidth requirement.Voltage between the inside and outside metal contact is provided by D.C. regulated power supply 5, voltage from 0
-5V is adjustable continuously.The gap of inside and outside metal contact is filled by boron-phosphorosilicate glass 6, thickness be 1
.One circle P type semiconductor piece 7 is arranged below interior metal contact edge; Width be 20
; There is a circle N type semiconductor piece 8 below of metal contact outside, width be 20
.Intrinsic layer 9 is the pure silicons that do not have impurity, is wrapped in P type and N type semiconductor.The intrinsic layer below is an oxygen buried layer 10, and available silicon dioxide is processed, and is used to prevent that charge carrier from spreading downwards, keeps the concentration of charge carrier.The oxygen buried layer below is a silicon substrate 11, can be regarded as the dielectric of one deck insulation, and plays a supportive role.
After D.C. regulated power supply 5 was opened, the weak free electron of N type semiconductor piece 8 will separate the generation electronics from atom, but P type semiconductor piece 7 produces the hole of free migration in the position that electronics is removed.Because the restriction of oxygen buried layer 10, electronics and hole can only be injected in the intrinsic layer 9.When carrier concentration reaches
; Plasma has enough conductances; Form the thin layer of metalloid; Cover the top layer, slit, equivalence is closed for slit 1.After D.C. regulated power supply 5 was closed, plasma disappeared at once, because interior metal contact 3 has certain interval with outer metal contact 4, and also the very thin thickness of interior metal contact 3, can ignore to the influence in slit 1, be equivalent to slit 1 and open.Can utilize 16 slits 1 of 5 pairs of same wave guide walls of D.C. regulated power supply to open simultaneously or close according to the application scenario of reality, dynamically adjust directional diagram.
The same day, line worked in the omnidirectional antenna mode, and all open in the slit 1 of four wave guide walls.The slit 1 of four wave guide walls all received the excitation of waveguide surface electric current and produced radiation this moment, produced the directional diagram of flat circle, and deviation in roundness is preferably arranged.
The same day, line worked in the directional antenna mode, only opened the slit 1 of a wave guide wall, and the slit 1 of its excess-three wave guide wall is because the effect temporary close of the plasma of device surface.Produce flat fan-shaped beam in a direction this moment, and antenna pattern has tangible directive property, and has higher gain and front and back ratio.
When antenna is used for omnidirectional's scanning, the break-make of scanning frequency control D.C. regulated power supply 5 as required.Open the slit 1 of a wave guide wall earlier, close the slit 1 of this wave guide wall again, open the slit 1 of adjacent waveguide wall simultaneously, so analogize, can realize that just directional diagram carries out 360 ° of omnidirectional's scannings in the waveguide cross section.
Above-described specific embodiment; Purpose, technical scheme and beneficial effect to the utility model have carried out further detailed description; It should be understood that the above is merely the specific embodiment of the utility model, be not in order to limit the scope of the utility model.Any those skilled in the art, equivalent variations and the modification under the prerequisite of design that does not break away from the utility model and principle, made all belong to the scope that the utility model is protected.
Claims (9)
1. based on the restructural waveguide mixing slot antenna of S-PIN diode, the main body of antenna is a rectangular waveguide, and an end of rectangular waveguide is used for feed, and the other end is provided with reflecting plate; It is characterized in that on said rectangular waveguide Guide of Wide Wall and Narrow Wall of Waveguide wall, all cutting 8-32 slit, and one of installation is used to control the S-PIN diode that the slit equivalence is opened or equivalence is closed in each slit; Slit on the Guide of Wide Wall is parallel to the long rib of rectangular waveguide, is distributed in Guide of Wide Wall center line both sides; Slit on the Narrow Wall of Waveguide wall is an inclined cut, and the incision Guide of Wide Wall, but does not cut the position, slit to the Guide of Wide Wall, and cut direction has angle with the vertical direction of long rib.
2. the restructural waveguide mixing slot antenna based on the S-PIN diode according to claim 1 is characterized in that the S-PIN diode of installing comprises interior metal contact, outer metal contact, boron-phosphorosilicate glass, P type semiconductor piece, N type semiconductor piece, intrinsic layer, oxygen buried layer and silicon substrate; Interior metal contact and outer metal contact overlay on slit surfaces, be positioned on the same plane, and interior metal contact are positioned at inside the outer metal contact, and be gapped between interior metal contact and the outer metal contact, filled boron-phosphorosilicate glass in the gap; There is the said P type semiconductor piece of a circle below at interior metal contact edge, is used to provide the hole; There is the said N type semiconductor piece of a circle below of outer metal contact, is used to provide electronics; P type and N type semiconductor piece all are wrapped in by said intrinsic layer except that end face; Be close to the very thin said oxygen buried layer of one deck below the intrinsic layer; Be close to said silicon substrate below the oxygen buried layer, silicon substrate is in the bottom in slit.
3. the restructural waveguide mixing slot antenna based on the S-PIN diode according to claim 1 it is characterized in that the angle of the vertical direction of each slit cuts direction and the long rib of rectangular waveguide on the Narrow Wall of Waveguide wall is 4 °-15 °, and corner dimension is different.
4. the restructural waveguide mixing slot antenna based on the S-PIN diode according to claim 2; It is characterized in that: the material of interior metal contact and outer metal contact is a conducting metal, thickness be 0.8
-1.5
.
5. the restructural waveguide mixing slot antenna based on the S-PIN diode according to claim 4; It is characterized in that: interior metal contact width be 200
, length be 14
-15
.
6. the restructural waveguide mixing slot antenna based on the S-PIN diode according to claim 2 is characterized in that: the gap between interior metal contact and the outer metal contact be 50
-100
.
7. the restructural waveguide mixing slot antenna based on the S-PIN diode according to claim 2; It is characterized in that: the material of intrinsic layer is a pure silicon, thickness be 70
-90
.
8. according to each described restructural waveguide mixing slot antenna of claim 2 ~ 7 based on the S-PIN diode; It is characterized in that: the material of oxygen buried layer is a silicon dioxide, thickness be 2
-3
.
9. the restructural waveguide mixing slot antenna based on the S-PIN diode according to claim 2; It is characterized in that: the material of silicon substrate is a pure silicon, thickness be 300
-500
.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204409029U CN202308320U (en) | 2011-11-09 | 2011-11-09 | Reconfigurable waveguide mixed slot antenna based on S-PIN (Silicon-Positive Intrinsic Negative) diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204409029U CN202308320U (en) | 2011-11-09 | 2011-11-09 | Reconfigurable waveguide mixed slot antenna based on S-PIN (Silicon-Positive Intrinsic Negative) diodes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202308320U true CN202308320U (en) | 2012-07-04 |
Family
ID=46377146
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011204409029U Expired - Fee Related CN202308320U (en) | 2011-11-09 | 2011-11-09 | Reconfigurable waveguide mixed slot antenna based on S-PIN (Silicon-Positive Intrinsic Negative) diodes |
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|---|---|
| CN (1) | CN202308320U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403573A (en) * | 2011-11-09 | 2012-04-04 | 华南理工大学 | Reconfigurable waveguide mixed slot antenna based on S-PIN diode |
| GB2546341A (en) * | 2016-01-15 | 2017-07-19 | Plasma Antennas Ltd | Three terminal solid state plasma monolithic microwave integrated circuit |
| CN108711671A (en) * | 2018-04-25 | 2018-10-26 | 南京航空航天大学 | A kind of Shared aperture frequency reconfigurable on piece slot array antenna and application method |
| CN110518360A (en) * | 2019-08-14 | 2019-11-29 | 南京航空航天大学 | Double S-PIN solid state plasma structures and the slot antenna for using the structure |
| CN110544823A (en) * | 2019-08-14 | 2019-12-06 | 南京航空航天大学 | Frequency and polarization reconfigurable solid state plasma antenna |
-
2011
- 2011-11-09 CN CN2011204409029U patent/CN202308320U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102403573A (en) * | 2011-11-09 | 2012-04-04 | 华南理工大学 | Reconfigurable waveguide mixed slot antenna based on S-PIN diode |
| CN102403573B (en) * | 2011-11-09 | 2014-04-02 | 华南理工大学 | Reconfigurable waveguide mixed slot antenna based on S-PIN diode |
| GB2546341A (en) * | 2016-01-15 | 2017-07-19 | Plasma Antennas Ltd | Three terminal solid state plasma monolithic microwave integrated circuit |
| CN108711671A (en) * | 2018-04-25 | 2018-10-26 | 南京航空航天大学 | A kind of Shared aperture frequency reconfigurable on piece slot array antenna and application method |
| CN110518360A (en) * | 2019-08-14 | 2019-11-29 | 南京航空航天大学 | Double S-PIN solid state plasma structures and the slot antenna for using the structure |
| CN110544823A (en) * | 2019-08-14 | 2019-12-06 | 南京航空航天大学 | Frequency and polarization reconfigurable solid state plasma antenna |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20161109 |