CN203085766U - Directional diagram reconfigurable disk micro-strip antenna based on S-PIN diodes - Google Patents
Directional diagram reconfigurable disk micro-strip antenna based on S-PIN diodes Download PDFInfo
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- CN203085766U CN203085766U CN 201220599116 CN201220599116U CN203085766U CN 203085766 U CN203085766 U CN 203085766U CN 201220599116 CN201220599116 CN 201220599116 CN 201220599116 U CN201220599116 U CN 201220599116U CN 203085766 U CN203085766 U CN 203085766U
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Abstract
The utility model discloses a directional diagram reconfigurable disk micro-strip antenna based on S-PIN diodes. The directional diagram reconfigurable disk micro-strip antenna based on S-PIN diodes comprises a circular pasting sheet for generating primary radiation and six fan-shaped parasitic pasting sheets with special U-shaped slots. An S-PIN diode is arranged between the circular pasting sheet and each parasitic pasting sheet, and the turning-on and turning-off states of each S-PIN diode are controlled by controlling the bias voltage of the S-PIN diode. When the antenna works, a probe is connected with the circular pasting sheet for direct feed and is connected with one parasitic pasting sheet through the corresponding S-PIN diode, so that surface current flows towards the pasting sheet, and a directional diagram can be deflected towards the direction. The directional diagram can be scanned in all directions by sequentially conducting adjacent S-PIN diodes. The directional diagram reconfigurable disk micro-strip antenna is small in size, easy to integrate and wide in application range. The directional diagram reconfigurable disk micro-strip antenna works within the frequency bands of 802.11g and 802.11p and has broad application prospect, and the directional diagram can be scanned in all directions.
Description
Technical field
The utility model relates to solid plasma body technique and microstrip antenna technology, particularly relates to the microstrip antenna that utilizes the solid plasma body technique to realize directional diagram reconstructable.
Background technology
The fast development of modern big capacity, multi-functional, ultra broadband integrated information system makes the information subsystem quantity of carrying on identical platform increase.The passage that antenna is come in and gone out as information in the wireless system, its quantity also correspondingly increase.The reconfigurable antenna technology makes antenna have whole cost, the weight reduction that reduces integrated information system, the RCS that reduces system, the good advantages such as electromagnetic compatibility characteristic of realization according to the real-time reconstruct antenna performance of actual environment needs.Wherein, directional diagram reconstructable aerial can make antenna pattern dynamically adjust, and can satisfy that intellectual weapon is target-seeking, automobile and rebecca, wireless and requirements such as satellite communication network and space remote sensing, has wide practical use.Research aspect directional diagram reconstructable is mostly still based on traditional phased array antenna theory at present.The utility model utilizes microstrip antenna to realize directional diagram reconstructable, makes directional diagram can carry out omnidirectional's scanning.Microstrip antenna is meant on the dielectric substrate, and one side covers thin metal layer as ground plate, and another side is made the metal patch of definite shape with the photoetching caustic solution, utilizes microstrip line or the coaxial probe antenna to the formation of paster feed.Plurality of advantages such as microstrip antenna is in light weight because of it, and volume is little, low section and become among the multiple antenna practical a kind of.
The physical property of plasma uniqueness is solving that antenna is stealthy, having very big development potentiality aspect the mutual coupling, bandwidth, so the gas ions antenna becomes the focus of the research of field of antenna.And most at present research is only limited to the gaseous plasma antenna, and almost still blank to the research of solid plasma body antenna.Solid state plasma generally is present in the physics semiconductor device, need not to wrap up with medium tube as the gaseous state plasma, thereby better fail safe and stability are arranged.Though it be difficult to by large tracts of land, high concentration excite, can conversion idea be used.The solid plasma that the utility model excites when utilizing the S-PIN diode operation makes it become well behaved radio-frequency (RF) switch.
The utility model content
The purpose of this utility model is to provide the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode, utilizes solid state plasma to realize that antenna structure dynamically changes, radiation characteristic Fast Adjustable, and the microstrip antenna that can carry out omnidirectional's scanning.
The purpose of this utility model is achieved through the following technical solutions:
Directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode, comprise substrate, ground plate and circular patch, it is characterized in that evenly at interval 4 ~ 6 S-PIN diodes being installed at the circular patch edge, the P type end of each S-PIN diode is connected with the circular patch edge; N type end is consistent with the width and the rectangle micro belt line width of fan-shaped parasitic patch connection and N type end by the rectangle microstrip line; Described fan-shaped parasitic patch respectively has a U-lag; Make S-PIN diode current flow or disconnection by the bias voltage of controlling described S-PIN diode; Make adjacent S-PIN diode current flow in turn, realize omnidirectional's scanning of antenna pattern.
Described U-lag is connected to form in turn by first bar-shaped trough, second bar-shaped trough, the 3rd bar-shaped trough, the 4th bar-shaped trough and the 5th bar-shaped trough, U-lag is about the perpendicular bisector symmetry of the 3rd bar-shaped trough, wherein first bar-shaped trough is vertical with the 3rd bar-shaped trough respectively with the 5th bar-shaped trough, second bar-shaped trough, the 4th bar-shaped trough equate with the angle of the 3rd bar-shaped trough, be 110 ° ~ 120 °, the opening of U-lag is towards circular patch.
The S-PIN diode comprises the first metal contact, the second metal contact, boron-phosphorosilicate glass, P type semiconductor piece, N type semiconductor piece, intrinsic layer, oxygen buried layer and silicon substrate; Gapped between the first metal contact and the second metal contact, filled boron-phosphorosilicate glass in the gap; The below of the first metal contact is connected with described P type semiconductor piece, is used to provide the hole; The below of the second metal contact is connected with described N type semiconductor piece, is used to provide electronics; P type and N type semiconductor piece all are wrapped in by described intrinsic layer except that end face; Be close to the described oxygen buried layer of one deck below the intrinsic layer; Be close to described silicon substrate below the oxygen buried layer, silicon substrate is in the bottom of S-PIN diode; When after adding forward bias voltage between the first metal contact and the second metal contact, the S-PIN diode current flow, when not being biased voltage, the S-PIN diode disconnects.The thickness of the first metal contact and the second metal contact is 0.8 μ m-1.5 μ m, and the gap between the two metal contacts is 50 μ m-100 μ m.The bias voltage that is added between the two metal contacts is a DC voltage-stabilizing, and magnitude of voltage is 2.5V-3V.The material of intrinsic layer is a pure silicon, and thickness is 70 μ m-90 μ m.The material of oxygen buried layer is a silicon dioxide, and thickness is 2 μ m-3 μ m.The material of silicon substrate is a pure silicon, and thickness is 200 μ m-400 μ m.The boron-phosphorosilicate glass that fill in gap between the first metal contact, the second metal contact is a kind of silica glass of boron-doping, and thickness is 1 μ m-2 μ m.
The S-PIN diode has the switching speed of nanosecond (as 10ns-100ns), is convenient to dynamically adjusting fast of antenna pattern.The width of S-PIN diode can be adjusted in a big way, and in the utility model, the width of S-PIN diode must be consistent with the rectangle micro belt line width, has guaranteed that directional diagram can produce obvious deflection with the S-PIN diode current flow.
The utility model utilizes direct voltage to excite P type semiconductor to discharge a large amount of holes, and N type semiconductor discharges a large amount of electronics, hole and electronics general designation solid plasma.These plasmas are injected in the intrinsic layer, form the plasma thin layer.But make the plasma thin layer have the good metal characteristic, sufficiently high plasma concentration must be arranged.Prove, when plasma concentration reaches 10
18Cm
-3During the order of magnitude, the S-PIN diode just has the good metal electric conductivity, has low insertion loss in the time of so just making the S-PIN diode current flow.For this reason, utilize SOI (Silicon-On-Insulator) structure, added oxygen buried layer between silicon substrate and intrinsic layer, this and existing silicon technology compatibility can reduce the operation of 13-20%.Added oxygen buried layer, and the distance between oxygen buried layer and the contact be skin depth 2-3 doubly, make charge carrier can't be diffused in the silicon substrate, only in very thin intrinsic layer, move, make concentration index satisfy easily, and guarantee that CONCENTRATION DISTRIBUTION is even, the dissipation when reducing microwave propagation.
Compared with prior art, the utlity model has following advantage and beneficial effect:
(1) research aspect directional diagram reconstructable at present is mostly still based on traditional phased array antenna theory.Phased array antenna needs a plurality of radiating elements to work simultaneously, and the feeding network complexity, and volume is big, cost is high, and the utility model adopts microstrip antenna, and volume is little, and processing is simple, and the wave beam controlled range is bigger, can realize omnidirectional's scanning.
(2) operating frequency of the present utility model is at 5.64GHz-5.93GHz, covered the networking of the working frequency range 5.825GHz-5.875GHz of 802.11g (WLAN) and 802.11p(car) working frequency range 5.86GHz-5.925 GHz, can be used for scenes such as the target tracking of these two kinds of local area network (LAN)s and scanning.
Description of drawings
Fig. 1 is the front schematic view of the utility model based on the directional diagram reconstructable collar plate shape microstrip antenna of S-PIN diode.
Fig. 2 is the generalized section of the utility model based on the directional diagram reconstructable collar plate shape microstrip antenna of S-PIN diode.
Fig. 3 is the structural representation of S-PIN diode.
Embodiment
Below in conjunction with accompanying drawing the utility model is described in further details, but execution mode of the present utility model and protection are not limited thereto.
As shown in Figure 1 and Figure 2, directional diagram reconstructable collar plate shape microstrip antenna adopts the coaxial feed mode, and main body comprises circular substrate 1, and ground plate 2, coaxial probe 3 directly connect circular patch 4 and carry out feed.6 S-PIN diodes 5 are evenly installed at circular patch 4 edges, and the P type end of each S-PIN diode is connected with the circular patch edge; N type end is consistent with the width and the rectangle micro belt line width of fan-shaped parasitic patch connection and N type end by rectangular microstrip line 6; Described fan-shaped parasitic patch respectively has a U-lag; When the S-PIN diode adds forward bias voltage, the S-PIN diode current flow, during making alive, the S-PIN diode does not disconnect.By controlling the on off operating mode of each S-PIN diode, realize the high speed omnidirectional scanning of antenna pattern.
As Fig. 1, described U-lag is connected to form in turn by first bar-shaped trough, second bar-shaped trough, the 3rd bar-shaped trough, the 4th bar-shaped trough and the 5th bar-shaped trough, U-lag is about the perpendicular bisector symmetry of the 3rd bar-shaped trough, wherein first bar-shaped trough is vertical with the 3rd bar-shaped trough respectively with the 5th bar-shaped trough, second bar-shaped trough, the 4th bar-shaped trough equate with the angle of the 3rd bar-shaped trough, be 110 ° ~ 120 °, the opening of U-lag is towards circular patch.
The S-PIN diode comprises the first metal contact 9, the second metal contact 10, boron-phosphorosilicate glass 11, P type semiconductor piece 12, N type semiconductor piece 13, intrinsic layer 14, oxygen buried layer 15 and silicon substrate 16; Gapped between the first metal contact and the second metal contact, filled boron-phosphorosilicate glass in the gap; The below of the first metal contact is connected with described P type semiconductor piece, is used to provide the hole; The below of the second metal contact is connected with described N type semiconductor piece, is used to provide electronics; P type and N type semiconductor piece all are wrapped in by described intrinsic layer except that end face; Be close to the described oxygen buried layer of one deck below the intrinsic layer; Be close to described silicon substrate below the oxygen buried layer, silicon substrate is in the bottom of S-PIN diode; When after adding forward bias voltage between the first metal contact and the second metal contact, the S-PIN diode current flow, when not being biased voltage, the S-PIN diode disconnects.Separate by rectangular aperture between every adjacent two fan-shaped parasitic patch 7.As an example, wherein the radius of circular substrate 1 is 25mm, and thickness is 3.2mm, and the radius of circular patch 4 is 5mm, the slit width 1mm between the fan-shaped paster 7.Fan-shaped parasitic patch 7 has a special U-lag 8, and it is formed by 5 sections, about the perpendicular bisector symmetry of a section, and a segment length 5mm wherein, b segment length 4.8mm, c segment length 4mm, through emulation, operating frequency is at 5.64GHz-5.93GHz.On off operating mode by control S-PIN diode 5 makes circular patch 1 be connected to one of them parasitic patch 7, and the antenna surface electric current just flows to this paster, and directional diagram is promptly to this direction deflection.If make adjacent S-PIN diode 5 conductings successively, can realize omnidirectional's scanning of directional diagram.
As shown in Figure 3, S-PIN diode 5 comprises that the gap between the first metal contact, 9, the second metal contacts, 10, the two metal contacts is 100 μ m.The gap of two metal contacts is filled by boron-phosphorosilicate glass 11, and thickness is 1 μ m.The below of the first metal contact 9 has the below of P type semiconductor piece 12, the second metal contacts 10 that N type semiconductor piece 13 is arranged.Intrinsic layer 14 is the pure silicons that do not have impurity, is wrapped in P type and N type semiconductor.The intrinsic layer below is an oxygen buried layer 15, and available silicon dioxide is made, and is used to prevent that charge carrier from spreading downwards, keeps the concentration of charge carrier.Oxygen buried layer 15 belows are silicon substrates 16, can be regarded as the dielectric of one deck insulation, and play a supportive role.
When adding forward voltage between the two metal contacts, the meeting of N type semiconductor piece 13 produces a large amount of free electrons, and 12 of P type semiconductor pieces produce a large amount of holes.Because the obstruct of oxygen buried layer 15, electronics and hole can only be injected in the intrinsic layer 14.When carrier concentration reaches 10
18Cm
-3, plasma has enough conductances, forms the thin layer of metalloid, 5 conductings of S-PIN diode.When making alive not, S-PIN diode 5 disconnects.
Antenna can be used for omnidirectional's scanning, the break-make of scanning frequency control power supply as required.S-PIN diode 5 of elder generation's conducting disconnects this diode again, and the adjacent S-PIN diode 5 of conducting is simultaneously so analogized, and just can realize omnidirectional's scanning of directional diagram.
Above-described specific embodiment, the purpose of this utility model, technical scheme and beneficial effect have been carried out further detailed description, institute it should be understood that the above only for specific embodiment of the utility model, is not in order to limit scope of the present utility model.Any those skilled in the art, equivalent variations and the modification made under the prerequisite that does not break away from design of the present utility model and principle all belong to the scope that the utility model is protected.
Claims (9)
1. based on the directional diagram reconstructable collar plate shape microstrip antenna of S-PIN diode, comprise substrate, ground plate and circular patch, it is characterized in that evenly at interval 4 ~ 6 S-PIN diodes being installed at the circular patch edge, the P type end of each S-PIN diode is connected with the circular patch edge; N type end is consistent with the width and the rectangle micro belt line width of fan-shaped parasitic patch connection and N type end by the rectangle microstrip line; Described fan-shaped parasitic patch respectively has a U-lag.
2. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 1, it is characterized in that: described U-lag is connected to form in turn by first bar-shaped trough, second bar-shaped trough, the 3rd bar-shaped trough, the 4th bar-shaped trough and the 5th bar-shaped trough, U-lag is about the perpendicular bisector symmetry of the 3rd bar-shaped trough, wherein first bar-shaped trough is vertical with the 3rd bar-shaped trough respectively with the 5th bar-shaped trough, second bar-shaped trough, the 4th bar-shaped trough equate with the angle of the 3rd bar-shaped trough, be 110 ° ~ 120 °, the opening of U-lag is towards circular patch.
3. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 1 is characterized in that the S-PIN diode of installing comprises the first metal contact, the second metal contact, boron-phosphorosilicate glass, P type semiconductor piece, N type semiconductor piece, intrinsic layer, oxygen buried layer and silicon substrate; Gapped between the first metal contact and the second metal contact, filled boron-phosphorosilicate glass in the gap; The below of the first metal contact is connected with described P type semiconductor piece, is used to provide the hole; The below of the second metal contact is connected with described N type semiconductor piece, is used to provide electronics; P type and N type semiconductor piece all are wrapped in by described intrinsic layer except that end face; Be close to the described oxygen buried layer of one deck below the intrinsic layer; Be close to described silicon substrate below the oxygen buried layer, silicon substrate is in the bottom of S-PIN diode.
4. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 3 is characterized in that: the thickness of the first metal contact and the second metal contact is 0.8 μ m-1.5 μ m.
5. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 3 is characterized in that: the gap between the first metal contact and the second metal contact is 50 μ m-100 μ m.
6. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 3, it is characterized in that: the material of intrinsic layer is a pure silicon, thickness is 70 μ m-90 μ m.
7. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 3, it is characterized in that: the material of oxygen buried layer is a silicon dioxide, thickness is 2 μ m-3 μ m.
8. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 3, it is characterized in that: the material of silicon substrate is a pure silicon, thickness is 200 μ m-400 μ m.
9. the directional diagram reconstructable collar plate shape microstrip antenna based on the S-PIN diode according to claim 3, it is characterized in that: the boron-phosphorosilicate glass that fill in the gap between the first metal contact, the second metal contact is a kind of silica glass of boron-doping, and thickness is 1 μ m-2 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220599116 CN203085766U (en) | 2012-11-14 | 2012-11-14 | Directional diagram reconfigurable disk micro-strip antenna based on S-PIN diodes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220599116 CN203085766U (en) | 2012-11-14 | 2012-11-14 | Directional diagram reconfigurable disk micro-strip antenna based on S-PIN diodes |
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| CN203085766U true CN203085766U (en) | 2013-07-24 |
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| CN 201220599116 Expired - Fee Related CN203085766U (en) | 2012-11-14 | 2012-11-14 | Directional diagram reconfigurable disk micro-strip antenna based on S-PIN diodes |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104901024A (en) * | 2015-03-25 | 2015-09-09 | 康凯科技（杭州）有限公司 | Multi-mode conical antenna system applied to WIFI |
| CN108199136A (en) * | 2017-11-22 | 2018-06-22 | 天津津航计算技术研究所 | A kind of directional diagram reconstructable aerial based on PIN pipes |
| CN108767481A (en) * | 2018-05-29 | 2018-11-06 | 电子科技大学 | A kind of directional diagram reconstructable RECTIFYING ANTENNA of broad beam |
-
2012
- 2012-11-14 CN CN 201220599116 patent/CN203085766U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104901024A (en) * | 2015-03-25 | 2015-09-09 | 康凯科技（杭州）有限公司 | Multi-mode conical antenna system applied to WIFI |
| CN104901024B (en) * | 2015-03-25 | 2017-11-07 | 康凯科技（杭州）股份有限公司 | Applied to the multi-mode conical antenna system in WIFI |
| CN108199136A (en) * | 2017-11-22 | 2018-06-22 | 天津津航计算技术研究所 | A kind of directional diagram reconstructable aerial based on PIN pipes |
| CN108767481A (en) * | 2018-05-29 | 2018-11-06 | 电子科技大学 | A kind of directional diagram reconstructable RECTIFYING ANTENNA of broad beam |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130724 Termination date: 20151114 |