CN104716408B - A kind of continuously variable type substrate integration wave-guide analog phase shifter - Google Patents
A kind of continuously variable type substrate integration wave-guide analog phase shifter Download PDFInfo
- Publication number
- CN104716408B CN104716408B CN201510138403.7A CN201510138403A CN104716408B CN 104716408 B CN104716408 B CN 104716408B CN 201510138403 A CN201510138403 A CN 201510138403A CN 104716408 B CN104716408 B CN 104716408B
- Authority
- CN
- China
- Prior art keywords
- guide
- siw
- integration wave
- substrate integration
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
Patent of the present invention is related to microwave circuit technology, the substrate integration wave-guide analog phase shifter of more particularly to a kind of continuously variable type.Including 50 Ω characteristic impedance microstrip lines, varactor, transition structure, substrate integration wave-guide and peripheral resistance capacitance inductance；Input is the microstrip line of 50 Ω characteristic impedances, and signal is fed to substrate integration wave-guide through crossing structure again.In SIW, a bar groove is opened along the electromagnetic field direction of propagation, it is two parts that SIW is divided to by this line of rabbet joint, and the SIW width comprising transition structure side is W, and opposite side width is C, and transition structure is the rectangle of depression.Varactor and fixed capacitance electric capacity are arranged on into line of rabbet joint both sides perpendicular to SIW in pairs., with VT continuous variable, broader bandwidth, loss are little, and reflection coefficient is little for the phase place change of the phase shifter, and phase shift range is big, is advantageously integrated in circuit.
Description
Technical field
Patent of the present invention is related to the substrate integration wave-guide (Substrate of microwave circuit technology, particularly continuously variable type
Integrated Waveguide, SIW) analog phase shifter.
Technical background
Phase shifter is a kind of important microwave device, and major function is that the signal to a certain frequency range is carried out at phase shift
Reason, is usually used in the aspects such as the Orthogonal Decomposition of phased array antenna, test equipment, signal.Phase shifter is a kind of Two-port netwerk Microwave Net,
Variable phase contrast is produced between the input and output signal that network is made by control signal, according to different operation principles, can
It is divided into digital phase shifter and analog phase shifter.
Substrate integration wave-guide (SIW) is a kind of novel microwave transmission line, and which is obtained on dielectric substrate using metal throuth hole
The field communication mode similar to waveguide is obtained, it is low excellent with Q-value height, little loss, realization easy to process, small volume, cost
Point, has become the study hotspot in microwave and millimeter wave field.
In related research report, the substrate integration wave-guide phase shifter is mainly using three kinds of methods realizing.2012,
K.Sellal realizes 4-digit number formula substrate integration wave-guide step phase shifter based on the interior PIN switching diodes for burying, referring to text
K.Sellal, L.Talbi, and M.Nedil are offered, " Design and implementation of a controllable
phase shifter using substrate integrated waveguide,”IET Microw.Antennas
Propag.,vol.6,no.9,pp.1090–1094,Apr.2012。
Researcher Tao Yang devise the substrate integration wave-guide phase shifter of 5 kinds of different phase shift number of degrees, using microwave switch
The passage for needing is selected, referring to document T.Yang, M.Ettorre, and R.Sauleau, " Novel phase shifter
design based on substrate integrated waveguide technology,”IEEE
Microw.Wireless Compon.Lett.,vol.22,no.10,pp.518–520,Oct.2012。
The both the above phase shifter can regard digital phase shifter as.Additionally, research worker is also to based on end reflection formula
The analog phase shifter that continuously adjusts studied, by controlling external voltage changing the capacitance of varactor, so as to change
Become reflection end face complex reflection coefficient, realize the phase place change of output signal, referring to document Yan Ding, and Ke Wu,
“Varactor-tuned substrate integrated waveguide phase shifter,”Microwave
Symposium Digest,IEEE Mtt-s International.IEEE,2011:1-4. but this reflection phase shifter
Circuit structure is more complicated, and needs to design three-dB coupler.
The content of the invention
For above-mentioned existing problems or deficiency, the invention provides a kind of substrate integration wave-guide simulation of continuously variable type is moved
Phase device, including 50 Ω characteristic impedance microstrip lines, varactor, transition structure, substrate integration wave-guide and peripheral resistance capacitance electricity
Sense；The architectural feature of the phase shifter is：Input is the microstrip line of 50 Ω characteristic impedances, and signal is fed to substrate through crossing structure again
Integrated waveguide SIW.In the SIW structures for working in full mould pattern, a bar groove, flute length and SIW length are opened along the electromagnetic field direction of propagation
Spend identical, width s≤1.5mm；Substrate integration wave-guide is divided into two parts by this line of rabbet joint, the SIW width comprising transition structure side
Spend for W, opposite side width is C, transition structure is the rectangle of depression, its length 1/3W≤l along the electromagnetic field direction of propagationx≤2/
3W, another edge lengths 1/5W≤ly≤2/3W。
Varactor and fixed capacitance electric capacity are separately mounted to into line of rabbet joint both sides perpendicular to SIW in pairs, and both are even
Line is vertical with the line of rabbet joint, each pair varactor VCDWith fixed capacitance electric capacity CmCentre distance s ＜ lt≤ 2mm, adjacent two pairs of changes
Hold the distance between diode and fixed capacitance electric capacity 5mm≤ls≤10mm。
Peripheral resistance capacitance inductance:The positive pole scolding tin of varactor is grounded in line of rabbet joint side, fixed capacitance electric capacity Cm
One end scolding tin line of rabbet joint opposite side be grounded, the negative pole and C of varactormThe other end connected together by scolding tin, and
Afterwards through wire respectively with choke induction LnWith current-limiting resistance RnSeries connection, at the same with decoupling capacitor CnEarth.CmCapacitance is more than
Varactor 100 times of capacitance of maximum.
The varactor and fixed capacitance electric capacity logarithm are less than 30 pairs.
The present invention operation principle be：Change the capacitance of diode using External Control Voltage, make substrate integration wave-guide exist
The Electric Field Distribution of line of rabbet joint both sides changes, so cause phase place that electromagnetic field propagated in substrate integration wave-guide sluggish and/or
In advance, finally realize phase shift function.
The present invention beneficial outcomes be：Simple structure, processing and fabricating are convenient, low cost, it is possible to use ready-made substrate collection
Realize into waveguiding structure., with VT continuous variable, broader bandwidth, loss are little for the phase place change of the phase shifter, reflection
Coefficient is little, and phase shift range is big, is advantageously integrated in circuit.
Description of the drawings
Fig. 1 is the top view of embodiment of the present invention substrate integration wave-guide part；
Fig. 2 is the single varactor seating side schematic diagram of the embodiment of the present invention；
Fig. 3 is the relation of the varactor voltage with capacitance of the embodiment of the present invention；
Fig. 4 is the relation of the varactor capacitance with phase place of the embodiment of the present invention；
Fig. 5 is the configured transmission of the embodiment of the present invention；
Fig. 6 is the reflection coefficient of the embodiment of the present invention；
Reference：Plated-through hole -1, transition structure -2, varactor and fixed capacitance diode -3, SIW sheets
Body -4, the line of rabbet joint -5.
Specific embodiment
The substrate integration wave-guide analog phase shifter of continuously variable type realizes the RT/Duroid 4350 in thickness for 0.508mm
Dielectric substrate on, the substrate relative dielectric constant be 3.48, loss angle tangent is 0.0037.As shown in figure 1, input is 50
Ω characteristic impedance microstrip lines, signal are fed to substrate integration wave-guide through crossing structure, open along the electromagnetic field direction of propagation in SIW structures
One bar groove, flute length are identical with SIW length.Substrate integration wave-guide is divided into two parts by this line of rabbet joint, in the right and left point of the line of rabbet joint
Not with equidistant lsTwo row varactor V of right angle settingCDWith fixed capacitance electric capacity Cm, it is the impact for reducing distributed constant, will
Choose the device (such as 0402 encapsulation) of small encapsulation.
Fig. 2 shows the installation method of varactor, and the positive pole scolding tin of varactor is grounded in line of rabbet joint side,
Fixed capacitance electric capacity CmOne end scolding tin line of rabbet joint opposite side be grounded (CmTake 100pF).CmEffect be isolated DC, while
Reduce the impact to whole circuit in parallel equivalent capacitance value.The negative pole and C of varactormThe other end be connected in one by scolding tin
Rise, then through wire respectively with choke induction LnWith current-limiting resistance RnSeries connection, at the same with decoupling capacitor CnEarth.We
The capacitance excursion for selecting single varactor is 0.23pF-2.1pF, and equivalent series resistance is less than 1 Ω.
Continuous phase shifting device in the present invention is realized in the electromagnetic field simulation software of specialty, using the high frequency of Ansoft companies
Structure simulation software (High Frequency Structure Simulator, HFSS) is modeled emulation, and parameter is defined such as
Under：wmsFor micro belt line width, lmsFor micro-strip line length, w is the SIW width comprising transition structure side, and c is opposite side substrate
The width of integrated waveguide, svpFor plated-through hole spacing, dvpFor plated-through hole diameter, l is substrate integration wave-guide length, and s is
Groove width, lsFor two adjacent groups varactor VCDWith fixed capacitance electric capacity CmSpacing, ltFor each pair varactor VCDWith it is solid
Constant volume value electric capacity CmCentre-to-centre spacing, lxFor the width of transition structure, lyFor the length of transition structure.After optimization Simulation, obtain optimal
Parameter size, it is specific as follows：wms=1.12mm, lms=6mm, c=3mm, w=15mm, svp=0.75mm, dvp=0.5mm, l=
130mm, s=0.5mm, ls=8mm, lt=1.4mm, lx=6.5mm, ly=5mm.
Fig. 3 gives the relation between the backward voltage of varactor and capacitance, it can be seen that voltage is into capacitance
Non-linear inverse ratio.Fig. 4 shows the phase diagram of phase shifter emulation, and Fig. 5 shows the transmission characteristic figure of phase shifter emulation, Fig. 6
Show the stickogram of phase shifter emulation.
From simulation result as can be seen that when corresponding varactor capacitance scope is 0.5pF-1pF, the phase shifter can
So that phase adjusted is carried out in the frequency range of 2.68-3.5GHz, relative bandwidth is 26.5%, and voltage regulation limits are 3-
6.5V, phase shift range are more than 145 °, and configured transmission is better than -3dB, and reflection coefficient is better than -10dB.
Claims (3)
1. the substrate integration wave-guide analog phase shifter of a kind of continuously variable type, including 50 Ω characteristic impedance microstrip lines, two pole of transfiguration
Pipe, transition structure, substrate integration wave-guide SIW and peripheral resistance capacitance inductance, it is characterised in that：Input is 50 Ω characteristic impedances
Microstrip line, signal is fed to substrate integration wave-guide through crossing structure again；In the SIW structures for working in full mould pattern, along electromagnetism
A bar groove is opened in the field direction of propagation, and flute length is identical with SIW length, width s≤1.5mm；Substrate integration wave-guide is divided into two by this line of rabbet joint
Individual part, the SIW width comprising transition structure side are W, and opposite side width is C, and transition structure is the rectangle of depression, and which is along electricity
Length 1/3W of the magnetic field direction of propagation≤lx≤ 2/3W, another edge lengths 1/5W≤ly≤2/3W；
Varactor and fixed capacitance electric capacity are separately mounted to into line of rabbet joint both sides perpendicular to SIW in pairs, and both lines with
The line of rabbet joint is vertical, each pair varactor VCDWith fixed capacitance electric capacity CmCentre distance s ＜ lt≤ 2mm, adjacent two pairs of transfigurations two
The distance between pole pipe and fixed capacitance electric capacity 5mm≤ls≤10mm；
Peripheral resistance capacitance inductance:The positive pole scolding tin of varactor is grounded in line of rabbet joint side, fixed capacitance electric capacity CmOne end
It is grounded in line of rabbet joint opposite side with scolding tin, the negative pole and C of varactormThe other end connected together by scolding tin, then pass through
Wire respectively with choke induction LnWith current-limiting resistance RnSeries connection, at the same with decoupling capacitor CnEarth, wherein CmCapacitance is more than change
Hold diode 100 times of capacitance of maximum.
2. the substrate integration wave-guide analog phase shifter of continuously variable type as claimed in claim 1, it is characterised in that：The transfiguration two
The logarithm of pole pipe and fixed capacitance electric capacity is less than 30 pairs.
3. as described in claim 1 or 2 is arbitrary continuously variable type substrate integration wave-guide analog phase shifter, it is characterised in that：SIW
From the RT/Duroid 4350 that thickness is 0.508mm, relative dielectric constant is 3.48, and loss angle tangent is 0.0037, CmTake
100pF；Wherein wmsFor micro belt line width, lmsFor micro-strip line length, svpFor plated-through hole spacing, dvpIt is straight for plated-through hole
Footpath, l are substrate integration wave-guide length；
The concrete size of each parameter is as follows：wms=1.12mm, lms=6mm, C=3mm, W=15mm, svp=0.75mm, dvp=
0.5mm, l=130mm, s=0.5mm, ls=8mm, lt=1.4mm, lx=6.5mm, ly=5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510138403.7A CN104716408B (en) | 2015-03-27 | 2015-03-27 | A kind of continuously variable type substrate integration wave-guide analog phase shifter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510138403.7A CN104716408B (en) | 2015-03-27 | 2015-03-27 | A kind of continuously variable type substrate integration wave-guide analog phase shifter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104716408A CN104716408A (en) | 2015-06-17 |
| CN104716408B true CN104716408B (en) | 2017-04-05 |
Family
ID=53415518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510138403.7A Expired - Fee Related CN104716408B (en) | 2015-03-27 | 2015-03-27 | A kind of continuously variable type substrate integration wave-guide analog phase shifter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104716408B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785249B (en) * | 2015-12-22 | 2019-01-29 | 中国电子科技集团公司第二十研究所 | 90 ° of phase-shift networks of ultra wide band |
| CN112151922B (en) * | 2019-06-28 | 2022-02-15 | Oppo广东移动通信有限公司 | Radio frequency switch device, antenna module and electronic equipment |
| CN111463530B (en) * | 2020-04-10 | 2022-04-05 | 昆山鸿永微波科技有限公司 | Silicon-based filtering chip with tunable bandwidth |
| CN113937440B (en) * | 2021-09-09 | 2022-05-27 | 电子科技大学长三角研究院(湖州) | Microstrip reflection type dynamic terahertz phase shifter based on varactor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102763269A (en) * | 2009-11-27 | 2012-10-31 | 亚洲大学校产学协力团 | Phase shifter using substrate integrated waveguide |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8648676B2 (en) * | 2011-05-06 | 2014-02-11 | The Royal Institution For The Advancement Of Learning/Mcgill University | Tunable substrate integrated waveguide components |
| US20130300602A1 (en) * | 2012-05-08 | 2013-11-14 | Samsung Electronics Co., Ltd. | Antenna arrays with configurable polarizations and devices including such antenna arrays |
-
2015
- 2015-03-27 CN CN201510138403.7A patent/CN104716408B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102763269A (en) * | 2009-11-27 | 2012-10-31 | 亚洲大学校产学协力团 | Phase shifter using substrate integrated waveguide |
Non-Patent Citations (3)
| Title |
|---|
| Broadband Phase Shifter Using Air Holes in Substrate Integrated Waveguide;Israël Boudreau et al.;《Microwave Symposium Digest(MTT),2011》;20111231;全文 * |
| Design and Characterization of Periodically-Loaded Substrate Integrated Waveguide Phase Shifters;Asanee Suntives et al.;《Microwave Symposium Digest(MTT),2010 IEEE MTT-S International》;20101231;全文 * |
| Novel Phase Shifter Design Based on Substrate-Integrated-Waveguide Technology;Tao Yang et al.;《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》;20121031;第22卷(第10期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104716408A (en) | 2015-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104716408B (en) | A kind of continuously variable type substrate integration wave-guide analog phase shifter | |
| US20080011509A1 (en) | Fractal and space-filling transmission lines, resonators, filters and passive network elements | |
| CN106654497B (en) | Minimized wide-band slow wave half module substrate integrated wave guide coupler and its design method | |
| Lin et al. | Design and analysis of super-wide bandpass filters using a novel compact meta-structure | |
| CN103956577A (en) | Integrated feeding network of 4G antenna | |
| CN104659451B (en) | The four modular belt bandpass filters based on 1/3 equilateral triangle substrate integrated resonator | |
| CN106887661A (en) | Slow wave substrate integration wave-guide based on the loading of lumped parameter inductance | |
| Hoefer et al. | Topology and design of wide-band 3D metamaterials made of periodically loaded transmission line arrays | |
| CN104518262B (en) | It is a kind of based on the substrate integration wave-guide Continuous phase shifting device buried in varactor | |
| Inoue et al. | A super-compact dual-band Wilkinson power divider composed of multi-layered CRLH transmission lines | |
| Afthar et al. | Analysis of equivalent circuit for bandpass filter based on SRR with groundplane windowing | |
| CN104953281A (en) | Adjustable frequency dielectric resonator antenna | |
| Qiang et al. | Compact empty substrate integrated waveguide with high performance and its application in microwave | |
| Mrvić et al. | Compact H-plane dual-band bandstop waveguide filter | |
| Singh et al. | Design of aperture coupled fed micro-strip patch antenna for wireless communication | |
| CN106450598B (en) | Wide-bandwidth phase-shifting range reflection-type adjustable phase shifter and design method thereof | |
| CN105720340A (en) | Compact type band-pass filter containing low-frequency transmission zero | |
| Fan et al. | Dynamically tunable four band filtering attenuator based on graphene integrated microstrip multi-mode resonator | |
| CN104269643A (en) | Electromagnetic soft surface structure and construction method thereof | |
| Zhou et al. | Slow-wave substrate integrated waveguide with partially polyline loading | |
| Afrang | Small size and low loss resonator type DMTL phase shifter | |
| Horii et al. | Super-compact LTCC-based multi-layered CRLH transmission lines for UWB applications | |
| Vivos et al. | Unbalanced metamaterials applied to phase shifter: Dedicated design method and application in C-band | |
| Zhurbenko et al. | Broadband impedance transformer based on asymmetric coupled transmission lines in nonhomogeneous medium | |
| Hua et al. | A micro compact coplanar power divider at X-band with finite-width ground plane based on GaAs MMIC technology |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170405 |