CN104716154A - Organic light-emitting display device and manufacturing method thereof - Google Patents
Organic light-emitting display device and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an organic light-emitting display device. A first electrode layer in an organic light-emitting diode and a capacitor bottom electrode peer layer in a capacitor are made of the same materials. A source/drain electrode layer in a thin film transistor and a capacitor top clicking peer layer in the capacitor are made of the same materials. A capacitor dielectric layer is independently manufactured, and the material and thickness of the capacitor dielectric layer can be optimally selected according to the requirements of the organic light-emitting display device so as to decrease the area of the capacitor and increase the aperture ratio of the organic light-emitting display device. According to the organic light-emitting display device and a manufacturing method thereof, the capacitor can be manufactured without increasing the number of process steps, so that the process is simple; an ion implantation procedure is omitted, so that the manufacturing process is effectively simplified, the product yield is increased, and the manufacturing cost is lowered.
Description
Technical field
The present invention relates to Display Technique field, be specifically related to a kind of novel organic light-emitting display device and preparation method thereof.
Background technology
Active array organic light emitting display device (English full name Active Matrix Organic LightingEmitting Display, be called for short AMOLED) as the one in organic light-emitting display device, utilize thin-film transistor (English full name Thin Film Transistor, be called for short TFT), collocation capacitance stores signal, controls brightness and the GTG performance of Organic Light Emitting Diode.Each independent Organic Light Emitting Diode has complete negative electrode, organic function layer and anode, and anode covers a thin film transistor (TFT) array, forms a matrix.Active array organic light emitting display device have can in large size, power saving, the feature such as resolution is high, the panel life-span is longer, therefore obtain great attention in Display Technique field.
In large size along with display floater, the power consumption of display unit is more and more higher, and research finds that increasing storage capacitance can play the electric current effectively increasing the driving stage and then the effect reducing power consumption; In addition, increase storage capacitance and effectively can also reduce the leaping voltage causing the problems such as display screen flicker, gray scale entanglement.Therefore, under the condition not affecting display unit aperture opening ratio, capacitance should be improved as far as possible.
Polysilicon due to its field-effect mobility high and be adapted to the features such as high speed operation circuit and complementary metal oxide semiconductor and be widely used as the semiconductor layer of TFT.At use polysilicon as in the AMOLED device of TFT semiconductor layer, usually can impose in partial polysilicon layer and mix ion, make it the bottom crown of electric polarization as electric capacity, to reach the object reducing technological process; Again using gate insulator and grid layer as capacitor dielectric layer and electric capacity top crown, realize TFT processing procedure and electric capacity processing procedure simultaneously.
But, there is a lot of problem in above-mentioned technique, such as: polysilicon layer surface in preparation process can form a large amount of crystallization projections, in order to reach effective gate insulator, add the thickness of crystallization projection, the thickness of gate insulator all cannot effectively reduce usually, is generally about 100nm, therefore cannot improve storage capacitance numerical value by the mode reducing thickness of dielectric layers; In addition, silica membrane has good insulating properties, and simultaneously its surface density of states of contacting with polysilicon surface is very low again, so the most frequently used as gate insulator, but the dielectric constant of silicon dioxide is very low, when using as capacitor dielectric layer, the numerical value of corresponding capacitance is lower.For this reason, in order to realize the increase of storage capacitance numerical value, can only be realized by the method increasing capacity area, greatly reducing the aperture opening ratio of display unit, affect the result of use of display unit.
Meanwhile, this technique needs to adulterate to the polysilicon layer of capacitor regions, makes it electric polarization, and this process need ion implantation and mask two procedures, complex process, preparation cost is high.
Summary of the invention
For this reason, to be solved by this invention is that existing organic light-emitting display device split shed rate is low, the problem of complex process, provides that a kind of aperture opening ratio is high, the simple organic light-emitting display device of technique and preparation method thereof.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
A kind of organic light-emitting display device of the present invention, comprises
Substrate;
Thin-film transistor, comprises semiconductor layer, grid layer, source/drain electrode layer, and one or more layers insulating barrier of isolation of semiconductor layer and grid layer, isolated gate layer and source/drain electrode layer;
Capacitor, comprises electric capacity top electrode, capacitor dielectric layer, capacitor lower electrode;
Organic Light Emitting Diode, comprises the first electrode layer, organic luminous layer and the second electrode lay;
First electrode layer and the source electrode in source/drain electrode layer or drain is electrically connected;
Described first electrode layer and described capacitor lower electrode are formed with same material with layer, and described source/drain electrode layer and described electric capacity top electrode are formed with same material with layer.
Described substrate is also directly formed with resilient coating, and described thin-film transistor, described capacitor, described Organic Light Emitting Diode are arranged on described resilient coating.
Be provided with the first through hole in described insulating barrier, described capacitor lower electrode is set directly on described substrate or described resilient coating by described first through hole.
Described first electrode layer is formed on described insulating barrier.
Described source/drain electrode layer covers the subregion of described first electrode layer.
Described substrate is also formed with the pixel confining layers of cover film transistor, described capacitor and described first electrode layer edge portion area.
The preparation method of described organic light-emitting display device, comprises the steps:
S1, the semiconductor layer that substrate is formed thin-film transistor, grid layer, and one or more layers insulating barrier of isolation of semiconductor layer and grid layer, isolated gate layer and source/drain electrode layer;
S2, on substrate insulating barrier farthest, forming the first metal layer, and patterning forms the first electrode layer and capacitor lower electrode;
S3, on capacitor lower electrode, directly form capacitance dielectric layer;
S4, on substrate insulating barrier farthest, forming the second metal level, and patterning forms source electrode, drain electrode and electric capacity top electrode, source electrode or drain electrode covering first electrode layer edge portion area;
S5, on the first electrode layer, form organic luminous layer and the second electrode lay successively.
Step S1 also comprises the step directly forming resilient coating on the substrate.
Also be included in step S2 in described insulating barrier and form the first through hole to expose the step in described substrate portion region or described buffer layer part region; The subregion of described the first metal layer is formed directly on the sidewall of described first through hole and described substrate or described resilient coating.
Also comprise the pixel confining layers being formed on the substrate and cover described first electrode, described source electrode, described drain electrode, described electric capacity top crown and described insulating barrier in step S5, and described pixel confining layers patterning is formed the step of the second through hole exposing described first electrode central region.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, a kind of organic light-emitting display device of the present invention, in the first electrode layer in Organic Light Emitting Diode and described capacitor, capacitor lower electrode is formed with same material with layer, electric capacity top electrode in source/drain electrode layer in thin-film transistor and described capacitor is formed with same material with layer, capacitor dielectric layer is independently prepared, the optimum choice of capacitor dielectric layer material and thickness can be carried out according to the demand of described organic light-emitting display device, to reduce the area of capacitor, increase the aperture opening ratio of described organic light-emitting display device.
2, the preparation method of a kind of organic light-emitting display device of the present invention, in the first electrode layer in Organic Light Emitting Diode and described capacitor, capacitor lower electrode is formed with same material with layer, electric capacity in source/drain electrode layer in thin-film transistor and described capacitor clicks same layer formed with same material, under the prerequisite not increasing processing step, just can realize the preparation of capacitor, technique is simple; And avoid ion injecting process, effectively simplify preparation technology, improve product yield, reduce preparation cost.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of organic light-emitting display device of the present invention.
In figure, Reference numeral is expressed as: 100-substrate, 110-resilient coating, 120-active layer, 130-first insulating barrier, 140-grid layer, 150-second insulating barrier, 160-first electrode layer, 161-capacitor lower electrode, 170-capacitor regions, 171-capacitor dielectric layer, 180-source electrode, 181-drain electrode, 182-electric capacity top electrode, 190-pixel confining layers, 200-organic luminous layer, 210-the second electrode lay.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element; In thin-film transistor, source electrode and drain electrode are prepared with layer with same material usually, and in order to expression method, source electrode and drain electrode place layer are called as " source/drain electrode layer ".
The present embodiment provides a kind of organic light-emitting display device, as shown in Figure 1, comprises substrate 100, is arranged on thin-film transistor, capacitor and Organic Light Emitting Diode on described substrate 100.
Described thin-film transistor is top gate structure, bottom grating structure or double-gate structure, comprise semiconductor layer 120, grid layer 140, source/drain electrode layer, and one or more layers insulating barrier of isolation of semiconductor layer 120 and grid layer 140, isolated gate layer 140 and source/drain electrode layer.The preferred top gate structure of thin-film transistor described in the present embodiment, namely along the direction away from substrate 100, stack gradually and be provided with semiconductor layer 120, first insulating barrier 130, grid layer 140, second insulating barrier 150 and source/drain electrode layer, the source electrode 180 in source/drain electrode layer and drain electrode 181 to contact with described semiconductor layer 120 be connected respectively by through described first insulating barrier 130 and the through holes in the second insulating barrier 150 of being arranged on.
As other embodiments of the present invention, described source electrode 180 and described drain electrode 181 can be exchanged.
Substrate 100 described in the present embodiment is glass substrate, and as alterable embodiment of the present invention, described substrate 100 can also be polymeric substrates or metal substrate.
Described semiconductor layer 120 is selected from but is not limited to the one in oxide semiconductor layer or polysilicon layer, the preferred polysilicon layer of the present embodiment.
Described first insulating barrier 130 and described second insulating barrier 150 are independently selected from one or both stacked structures formed in the silicon oxide layer or silicon nitride obtained by organosiloxane, the silicon oxide layer that first insulating barrier 130 described in the present embodiment is preferably obtained by organosiloxane, the preferred tetraethoxysilane of described organosiloxane (TEOS), one or both stacked structures formed in the silicon oxide layer that described second insulating barrier 150 is preferably obtained by organosiloxane or silicon nitride.
Described grid layer 140 is selected from but is not limited to the one of the aluminium lamination of individual layer, molybdenum layer, silver layer, layers of copper, aluminium alloy layer or the molybdenum-aluminium-molybdenum layer deposited successively, molybdenum-tungsten layer, molybdenum-medium low electrical resistant material of tungsten-molybdenum layer; Preferred Mo layer in the present embodiment.
Described source/drain electrode layer is selected from but is not limited to one or more stacked structures formed in the low resistance metal layers such as Ti, Al, Mo; The stacked structure that in the present embodiment, preferred Ti layer, Al layer and Ti layer are formed successively.
Described capacitor comprises electric capacity top electrode 182, capacitor dielectric layer 171 and capacitor lower electrode 161.
Described capacitor dielectric layer 171 is selected from but is not limited to one or more the stacked structure in the insulating material such as silicon nitride layer and silicon oxide layer; Preferred silicon nitride layer in the present embodiment.
Described Organic Light Emitting Diode comprises the first electrode layer 160, organic luminous layer 200 and the second electrode lay 210, first electrode layer 160 and the source electrode 180 in source/drain electrode layer or drain 181 is electrically connected, and the source electrode 180 in described source/drain electrode layer covers the subregion at described first electrode layer 160 edge.
Described first electrode layer 160 is selected from but is not limited to the higher metal of work function (gold, silver, aluminium, nickel etc.), transparent conductive metal oxide (ITO: tin indium oxide etc.), carbon black, conducting polymer etc.; The ITO/Ag/ITO three-decker layer that the present embodiment preferably deposits successively.
Described organic luminous layer 200 is selected from but is not limited to electroluminescent organic material of the prior art, the present embodiment is with 4-(dicyanoethylene)-2-the tert-butyl group-6-(1,1,7, the Buddhist nun's pyridine of 7-tetramethyl Lip river of a specified duration)-4H-furans (DCJTB) is as luminescent layer, and DCJTB is laboratory synthesis.
Described the second electrode lay 210 is selected from but is not limited to the less material of work function, as alkaline-earth metal, alkali metal etc.; The preferred aluminium electrode of the present embodiment.
As other embodiments of the present invention, described Organic Light Emitting Diode also comprises one or more the combination in electron injecting layer, electron transfer layer, hole blocking layer, electronic barrier layer, hole transmission layer, hole injection layer.
Described first electrode layer 160 is formed with same material with layer with described capacitor lower electrode 161, and described source/drain electrode layer and described electric capacity top electrode 182 are formed with same material with layer.
In the present embodiment, described first insulating barrier 130 in described thin-film transistor and described second insulating barrier 150 extend to capacitor region and Organic Light Emitting Diode region simultaneously, and described capacitor and described Organic Light Emitting Diode to be arranged on described second insulating barrier on 150.
As convertible embodiment of the present invention; also one can be had at the most to extend to described capacitor region or described Organic Light Emitting Diode region in described first insulating barrier 130 and described second insulating barrier 150; all can realize object of the present invention, belong to protection scope of the present invention.
In the present embodiment, described substrate 100 is also directly formed with resilient coating 110, described thin-film transistor, described capacitor, described Organic Light Emitting Diode are arranged on described resilient coating 110, as convertible embodiment, can not also arrange resilient coating 110.
Described resilient coating 110 is selected from but is not limited to one or more the stack layer in silicon oxide layer, silicon nitride layer; Preferred silicon nitride layer and silicon oxide layer double-decker in the present embodiment.
In the present embodiment, described first insulating barrier 130 and described second insulating barrier 150 are also provided with the first through through hole at capacitor regions 170 place, and described capacitor lower electrode 161 is set directly on described resilient coating 110 by described first through hole.
As convertible embodiment of the present invention, in described first insulating barrier 130 and described second insulating barrier 150, the first through hole can not also be set, or described first through hole is only arranged in described second insulating barrier 150, described capacitor lower electrode 161 is set directly on described first insulating barrier 130 or described second insulating barrier 150.
In the present embodiment, described substrate 100 is also formed with the pixel confining layers 190 of cover film transistor, described capacitor and described first electrode layer 160 edge portion area, namely, the second through hole of exposure first electrode layer 160 is formed in described pixel confining layers 190, described organic luminous layer 200 is arranged on described first electrode 160 in described second through hole, described second electrode 210 by being arranged in described pixel confining layers 190, and on the sidewall extending to described second through hole and described organic luminous layer 200.
Described pixel confining layers 190 is selected from but is not limited to the one in light sensation organic insulating material; DL1401-B or DL1000C that in the present embodiment, preferred toray (Toray) is produced.
The preparation method of described organic light-emitting display device, comprises the steps:
S1, the semiconductor layer 120 forming thin-film transistor on the substrate 100, grid layer 140, and one or more layers insulating barrier of isolation of semiconductor layer 120 and grid layer 140, isolated gate layer 140 and source/drain electrode layer.
The preferred top gate structure of thin-film transistor described in the present embodiment, therefore described grid layer 140 is arranged on the top of described semiconductor layer 120, described insulating barrier comprises the first insulating barrier 130 be set directly at above described semiconductor layer 120, be set directly at the second insulating barrier 150 on described grid layer 140, the formation of described each layer and all same prior art of Patternized technique.
In the present embodiment, be also included in the step described substrate 100 directly being formed resilient coating 110, the same prior art of preparation technology.
S2, by magnetron sputtering technique from substrate 100 insulating barrier farthest, namely on the second insulating barrier 150, form the first metal layer, and be patterned in Organic Light Emitting Diode region by photoetching and etching technics and form the first electrode layer 160, form capacitor lower electrode 161 at capacitor regions 170.
Also comprise in the present embodiment and in described first insulating barrier 130 and described second insulating barrier 150, form the first through hole to expose the step of described resilient coating 110 subregion by photoetching and etching technics, the sidewall that the subregion of described the first metal layer is formed directly into described first through hole and on being limited in described first through hole described resilient coating 110.
As other embodiments of the present invention, described the first metal layer can also pass through the technique preparations such as direct current sputtering, radio frequency sputtering, reactive sputtering, all can realize object of the present invention, belong to protection scope of the present invention.
S3, by plasma enhanced vapor deposition technique on capacitor lower electrode 161 directly formed capacitance dielectric layer 171.
As other embodiments of the present invention, described capacitance dielectric layer 171 by gas-phase deposition preparations such as cryogenic gas vapour depositions, all can also can realize object of the present invention, belong to protection scope of the present invention.
S4, by magnetron sputtering technique from substrate 100 insulating barrier farthest, namely on the second insulating barrier 150, form the second metal level, and forming source electrode 180, drain electrode 181 and electric capacity top electrode 182 by photoetching and etching technics patterning, source electrode 180 or drain electrode 181 cover the first electrode layer 160 edge portion area.
S5, on described substrate 100, formed the pixel confining layers 190 covering described first electrode 160, described source electrode 180, described drain electrode 181, described electric capacity top crown 182 and described first insulating barrier 150 by coating technique, and by litho developing process, described pixel confining layers 190 patterning is formed the second through hole exposing described first electrode 160 central region; On the first electrode layer 160, form organic luminous layer 200 by evaporation process, on described organic luminous layer 200, form described the second electrode lay 210 by evaporation process, and in the side extending to described second through hole and described pixel confining layers 190.
As other embodiments of the present invention, described organic luminous layer 200 can be able to adopt in prior art conventional as technique preparations such as evaporation, spin coating, inkjet printings according to the molecular structure of adopted electroluminescent material; Described the second electrode lay 210 can adopt the technique such as evaporation, direct current sputtering, radio frequency sputtering, reactive sputtering preparation conventional in prior art according to material therefor performance, all can realize object of the present invention, belong to protection scope of the present invention.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (10)
1. an organic light-emitting display device, comprises
Substrate;
Thin-film transistor, comprises semiconductor layer, grid layer, source/drain electrode layer, and one or more layers insulating barrier of isolation of semiconductor layer and grid layer, isolated gate layer and source/drain electrode layer;
Capacitor, comprises electric capacity top electrode, capacitor dielectric layer, capacitor lower electrode;
Organic Light Emitting Diode, comprises the first electrode layer, organic luminous layer and the second electrode lay;
First electrode layer and the source electrode in source/drain electrode layer or drain is electrically connected;
It is characterized in that,
Described first electrode layer and described capacitor lower electrode are formed with same material with layer, and described source/drain electrode layer and described electric capacity top electrode are formed with same material with layer.
2. organic light-emitting display device according to claim 1, is characterized in that, described substrate is also directly formed with resilient coating, and described thin-film transistor, described capacitor, described Organic Light Emitting Diode are arranged on described resilient coating.
3. organic light-emitting display device according to claim 1 and 2, is characterized in that, is provided with the first through hole in described insulating barrier, and described capacitor lower electrode is set directly on described substrate or described resilient coating by described first through hole.
4. organic light-emitting display device according to claim 1 and 2, is characterized in that, described first electrode layer is formed on described insulating barrier.
5. organic light-emitting display device according to claim 4, is characterized in that, described source/drain electrode layer covers the subregion of described first electrode layer.
6. organic light-emitting display device according to claim 1 or 5, is characterized in that, described substrate is also formed with the pixel confining layers of cover film transistor, described capacitor and described first electrode layer edge portion area.
7. a preparation method for the organic light-emitting display device described in any one of claim 1-6, is characterized in that, comprises the steps:
S1, the semiconductor layer that substrate is formed thin-film transistor, grid layer, and one or more layers insulating barrier of isolation of semiconductor layer and grid layer, isolated gate layer and source/drain electrode layer;
S2, on substrate insulating barrier farthest, forming the first metal layer, and patterning forms the first electrode layer and capacitor lower electrode;
S3, on capacitor lower electrode, directly form capacitance dielectric layer;
S4, on substrate insulating barrier farthest, forming the second metal level, and patterning forms source electrode, drain electrode and electric capacity top electrode, source electrode or drain electrode covering first electrode layer edge portion area;
S5, on the first electrode layer, form organic luminous layer and the second electrode lay successively.
8. the preparation method of organic light-emitting display device according to claim 7, is characterized in that, step S1 also comprises the step directly forming resilient coating on the substrate.
9. the preparation method of organic light-emitting display device according to claim 8, is characterized in that, is also included in described insulating barrier and forms the first through hole to expose the step in described substrate portion region or described buffer layer part region in step S2; The subregion of described the first metal layer is formed directly on the sidewall of described first through hole and described substrate or described resilient coating.
10. the preparation method of the organic light-emitting display device according to any one of claim 7-9, it is characterized in that, also comprise the pixel confining layers being formed on the substrate and cover described first electrode, described source electrode, described drain electrode, described electric capacity top crown and described insulating barrier in step S5, and described pixel confining layers patterning is formed the step of the second through hole exposing described first electrode central region.
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