CN104713761A - Method for obtaining single-layer or thin-layer two-dimensional material with high sample density through humidity control - Google Patents
Method for obtaining single-layer or thin-layer two-dimensional material with high sample density through humidity control Download PDFInfo
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- CN104713761A CN104713761A CN201510090426.5A CN201510090426A CN104713761A CN 104713761 A CN104713761 A CN 104713761A CN 201510090426 A CN201510090426 A CN 201510090426A CN 104713761 A CN104713761 A CN 104713761A
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Abstract
To transfer samples as many as possible to prepare a mechanical peeling single-layer material sample with high sample density, the invention provides a method for obtaining a single-layer or thin-layer two-dimensional material with high sample density through humidity control. At present, a method of direct peeling or peeling after pressing is adopted in the transfer process of most experiments. The invention provides a method that an adhesive tape to which a substrate material is adhered is left to stand in a drying cabinet for a certain while and is subsequently peeled off, and the humidity and the standing time of the drying cabinet can be accurately controlled. A mechanically peeled single-layer material sample with high quality can be prepared by selecting appreciate conditions according to different substrate materials and peeling materials.
Description
Technical field
The present invention relates to a kind of method that humid control obtains high sample rate individual layer or thin layer two-dimensional material.
Background technology
2010, Holland nationality physicist An Deliehaimu and the physicist Constantine Nuo Woxiaoluofu having Britain and the Russian double nationality grapheme material of monoatomic layer that used adhesive tape to isolate, and therefore obtain Nobel Prize in physics in 2010.Due to the various excellent properties such as high strength & high electric-conduction, high-termal conductivity that monolayer material has, the research of monolayer material attracts wide attention.The method preparing monolayer material has the multiple methods such as mechanical stripping method, silicon carbide epitaxial growth method, metal surface growth method.The method be wherein widely used the most is mechanical stripping method, its concrete operations are placed by bulk sample with folding adhesive tape rear on adhesive tape, each molecular layer of sample to be separated, afterwards base material is invested on adhesive tape, utilize the Van der Waals between base material and sample to be transferred on base material by sample, this wherein just contains a lot of thin layers and single layer samples.But this method exists the distinct disadvantage such as efficiency is low, wayward, in practical operation, the single layer samples quantity be transferred on base material is often little, is difficult to the monolayer material sample obtaining high sample rate.
Summary of the invention
In order to shift sample as much as possible, preparing the mechanical stripping monolayer material sample of high sample rate, the invention provides a kind of method that humid control obtains high sample rate individual layer or thin layer two-dimensional material.At present, the transfer process used in major part test is all the method taking directly to peel off or peel off after pressing.The method that the present invention peels off after adopting and the adhesive tape with base material being statically placed in drying cupboard a period of time again, accurately can control the humidity in drying cupboard and time of repose.According to different base materials and release liner, select suitable condition can prepare high-quality mechanical stripping monolayer material sample.
Because the inventive method operates without the need to other after sample is statically placed in drying cupboard, therefore workload does not increase compared with classic method, but the sample rate prepared by the present invention is but considerably beyond classic method.But the inventive method also also exists some shortcomings, in practical operation, such as find the quantity too increasing base material gluing while improving sample rate.This defect can use the gluing method that removes as heating etc. to make up.
Embodiment: taking identical tape stripping method to prepare in monoatomic layer materials process, according to different bulk raw materials and transfer substrate, need to take different preparation conditions.
Embodiment one: 1. clip is about the long adhesive tape of 5cm, by sticky to adhesive tape and molybdenum disulfide bulk 5 ~ 10 seconds, and doubling adhesive tape repeatedly, to adhesive tape, be stained with sample.
2. the silicon chip of well cutting is attached to after on adhesive tape, adhesive tape is fixed.Pressing silicon chip is fitted completely to silicon chip and adhesive tape.
3. be statically placed in drying cupboard by the adhesive tape with silicon chip, humidity is set to 20%, leaves standstill eight hours.
4. the adhesive tape with silicon chip is taken out and stripped down from adhesive tape by silicon chip from drying cupboard.
Embodiment two: 1. clip is about the long adhesive tape of 5cm, gets a little crystalline flake graphite and is sprinkled upon on adhesive tape, and doubling adhesive tape repeatedly, to adhesive tape, be stained with sample.
2. the silicon chip of well cutting is attached to after on adhesive tape, adhesive tape is fixed.Pressing silicon chip is fitted completely to silicon chip and adhesive tape.
3. will be statically placed in drying cupboard with silicon chip adhesive tape, humidity is set to 15%, leaves standstill six hours.
4. the adhesive tape with silicon chip is taken out and stripped down from adhesive tape by silicon chip from drying cupboard.
Embodiment three: 1. clip is about the long adhesive tape of 5cm, by sticky to adhesive tape and molybdenum disulfide bulk 5 ~ 10 seconds, and doubling adhesive tape repeatedly, to adhesive tape, be stained with sample.
2. the quartz of well cutting is attached to after on adhesive tape, adhesive tape is fixed.Pressing quartz is fitted completely to quartz and adhesive tape.
3. be statically placed in drying cupboard by the adhesive tape with quartz, humidity is set to 10%, leaves standstill eight hours.
4. the adhesive tape with quartz is taken out and stripped down from adhesive tape by quartz from drying cupboard.
Claims (3)
1. humid control obtains a method for high sample rate individual layer or thin layer two-dimensional material, it is characterized in that being statically placed in by sample in preparation process corresponding preparation process in drying cupboard.
2. a kind of humid control according to claim 1 obtains the method for high sample rate individual layer or thin layer two-dimensional material, it is characterized in that the mode of the base material of well cutting by pressing or gas blow pressure to be attached to after on adhesive tape, the adhesive tape with base material is statically placed in drying cupboard.
3. the method for high sample rate individual layer or thin layer two-dimensional material is obtained according to a kind of humid control described in claim 1, it is characterized in that according to different transfer substrate and the different demands to sample, need to take different preparation conditions, be specially the humidity in drying cupboard, leave standstill total duration etc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510090426.5A CN104713761A (en) | 2015-02-28 | 2015-02-28 | Method for obtaining single-layer or thin-layer two-dimensional material with high sample density through humidity control |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510090426.5A CN104713761A (en) | 2015-02-28 | 2015-02-28 | Method for obtaining single-layer or thin-layer two-dimensional material with high sample density through humidity control |
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| CN104713761A true CN104713761A (en) | 2015-06-17 |
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| CN201510090426.5A Pending CN104713761A (en) | 2015-02-28 | 2015-02-28 | Method for obtaining single-layer or thin-layer two-dimensional material with high sample density through humidity control |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106769326A (en) * | 2017-01-24 | 2017-05-31 | 华东师范大学 | A kind of method of the TEM sample of dry process two-dimensional material |
| CN109179391A (en) * | 2018-08-16 | 2019-01-11 | 华东师范大学 | A kind of preparation method of few layer graphene film |
| CN112853486A (en) * | 2020-12-31 | 2021-05-28 | 大连理工大学 | Method for safely and rapidly preparing two-dimensional perovskite single crystal in air |
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| CN103459315A (en) * | 2011-04-01 | 2013-12-18 | 三星泰科威株式会社 | Method of manufacturing graphene film, apparatus for manufacturing graphene film, and graphene film manufactured by using apparatus for manufacturing graphene film |
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| CN104370281A (en) * | 2014-10-21 | 2015-02-25 | 江南石墨烯研究院 | Device and method for transferring CVD grown graphene |
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Patent Citations (6)
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| CN103459315A (en) * | 2011-04-01 | 2013-12-18 | 三星泰科威株式会社 | Method of manufacturing graphene film, apparatus for manufacturing graphene film, and graphene film manufactured by using apparatus for manufacturing graphene film |
| US20130334579A1 (en) * | 2012-06-14 | 2013-12-19 | Stmicroelectronics S.R.L. | Manufacturing method of a graphene-based electrochemical sensor, and electrochemical sensor |
| CN103072976A (en) * | 2012-12-28 | 2013-05-01 | 同济大学 | Transfer method of graphene or oxidized graphene thin film |
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| CN104370281A (en) * | 2014-10-21 | 2015-02-25 | 江南石墨烯研究院 | Device and method for transferring CVD grown graphene |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106769326A (en) * | 2017-01-24 | 2017-05-31 | 华东师范大学 | A kind of method of the TEM sample of dry process two-dimensional material |
| CN109179391A (en) * | 2018-08-16 | 2019-01-11 | 华东师范大学 | A kind of preparation method of few layer graphene film |
| CN112853486A (en) * | 2020-12-31 | 2021-05-28 | 大连理工大学 | Method for safely and rapidly preparing two-dimensional perovskite single crystal in air |
| CN112853486B (en) * | 2020-12-31 | 2022-03-04 | 大连理工大学 | Method for safely and rapidly preparing two-dimensional perovskite single crystal in air |
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