CN104708224A - Short filament reinforced high-purity indium composite solder and preparation method thereof - Google Patents

Short filament reinforced high-purity indium composite solder and preparation method thereof Download PDF

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Publication number
CN104708224A
CN104708224A CN201510046157.2A CN201510046157A CN104708224A CN 104708224 A CN104708224 A CN 104708224A CN 201510046157 A CN201510046157 A CN 201510046157A CN 104708224 A CN104708224 A CN 104708224A
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CN
China
Prior art keywords
short
purity indium
high purity
indium
fibre silk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510046157.2A
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Chinese (zh)
Inventor
邵长斌
汤庆敏
刘存志
王莉敏
徐现刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Huaguang Optoelectronics Co Ltd
Original Assignee
Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Shandong Inspur Huaguang Optoelectronics Co Ltd filed Critical Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority to CN201510046157.2A priority Critical patent/CN104708224A/en
Publication of CN104708224A publication Critical patent/CN104708224A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/40Making wire or rods for soldering or welding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Fibers (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)

Abstract

The invention provides short filament reinforced high-purity indium composite solder and a preparation method thereof. According to the short filament reinforced high-purity indium composite solder, short filaments are distributed in high-purity indium. The preparation method comprises the following steps that (1) filaments are cut to be short filaments with the length being 15-30 microns; (2) high-purity indium powder and the short fibers are mixed and are placed in a griddle; (3) the griddle is pumped to be in a high vacuum state, and then is filled with argon; (4) the high-purity indium is heated to be molten, stirring is conducted to enable the short filaments to be distributed in the molten indium, and the composite indium solder with the short filaments distributed inside are obtained after cooling. The short filament reinforced high-purity indium composite solder can effectively solve the problems that high-purity indium packaging is low in strength, poor in fatigue property and short in device service life, and while a semiconductor device with good photoelectric parameters and long service life is obtained, the product percent of pass can be effectively improved.

Description

Short-fibre silk strengthens high purity indium composite solder and preparation method thereof
Technical field
The present invention relates to a kind of high purity indium composite solder for various types of semiconductor devices relieved package, and the preparation method of this solder, belong to solder technology field.
Background technology
Twentieth century seventies, the prelude in photoelectron epoch has been pulled open in the realization of the success that semiconductor laser room temperature is shaken continuously and low loss fiber.Semiconductor laser has that volume is little, lightweight, efficiency is high, the life-span is long, be easy to modulation and the advantage such as cheap, is widely used in industry, medical science and military field.
The temperature tolerance of semiconductor devices is lower, and during encapsulation, the melt temperature of solder will lower than the highest tolerable temperature of semiconductor devices.Therefore semiconductor packages commonly uses the low melting point slicken solders such as indium (In).High purity indium solder has good heat-conductivity conducting performance, can form good Ohmic contact, have superior plastic deformation ability simultaneously with semiconductor chip, effectively can alleviate the residual stress of the material internal formed because of thermal expansion coefficient difference.But, while indium solder brings superior plasticity, yield strength is lower also, after encapsulation semiconductor devices be easy to bend, the distortion such as warpage, package strength is not high, anti-fatigue performance is poor, and simultaneously high purity indium solder encapsulated semiconductor laser instrument exists indium and spreads phenomenon, has had a strong impact on service behaviour and the service life of semiconductor devices.
In view of above shortcoming, the Au-Sn hard solder with high strength waits until that extensive use is studied.But although Au-Sn hard solder intensity is high, the residual stress caused because of thermal mismatching enlarges markedly.For semiconductor laser, there is larger residual stress in chip, easily there is multiplet of doublet phenomenon in encapsulated device, has had a strong impact on the output efficiency of semiconductor laser; And under larger residual stress effect, along with the dislocation in the prolongation semiconductor chip of working time and defect constantly can increase and migration under the acting in conjunction of stress and fuel factor, even form the defects such as micro-crack, thus cause the life-span of semiconductor devices significantly to be reduced.
Chinese patent literature CN102066045B disclosed " Jin-Xi-indium solder that can use with unleaded tin solder compatibility ", it is a kind of Pb-free solder alloy made with gold, tin and indium, the concentration that presents of tin is 17.5% to 20.5%, it is 2.0% to 6.0% that indium presents concentration, and balance mass is gold.The melting range of this alloy is 290 DEG C to 340 DEG C, preferably between 300 DEG C to 340 DEG C.Because the fusing point of this welding alloy is enough high, to allow rear heated sealed; And enough lowly not cause damage to allow sealing semiconductor, be specially adapted to sealed semiconductor device.
Use Precious Metals-Gold in above-mentioned Jin-Xi-indium solder, while raising the cost, do not improve the intensity of solder.
Summary of the invention
For the deficiency that existing semiconductor packages indium solder exists, the invention provides a kind of short-fibre silk and strengthen high purity indium composite solder, this solder is under the condition not changing original high purity indium packaging technology, obtain the welding point of high strength, thus effectively improve photoelectric properties and the service life of semiconductor devices.Provide the preparation method of this solder simultaneously.
Short-fibre silk of the present invention strengthens high purity indium composite solder, is be distributed with short-fibre silk in high purity indium (purity is higher than 99.99%).
Described short-fibre silk adopts carbon fiber, glass fibre, ceramic fibre or other toughness fiber do not reacted with indium.
Described short-fibre silk random dispersion in high purity indium, can not form cellosilk mass.
The volume ratio of described short-fibre silk and high purity indium is 1:20-1:10.
The length of described short-fibre silk is 15-30 μm.
Above-mentioned short-fibre silk strengthens the preparation method of high purity indium composite solder, comprises the following steps:
(1) filament (carbon fiber, glass fibre or ceramic fibre) is cut into the short-fibre silk that length is 15-30 μm;
(2) by the ratio mixing of high purity indium powder (200-400 order) and short-fibre silk 1:20-1:10 by volume, put into melting and do pot, and mix;
(3) dry pot is put into refining furnace, first pumping high vacuum, is then filled with argon gas, avoids high purity indium to volatilize under vacuo;
(4) heating makes high purity indium melt, and stirring makes short-fibre silk be distributed in molten indium, obtains the compound indium solder that inside is distributed with short-fibre silk after cooling.
The compound indium solder punching obtained is become the solder sheet of arbitrary shape, both can apply.
The filament selected in the present invention and high purity indium, the Gold plated Layer on semiconductor is all reactionless, belongs to desirable physical doping, does not affect the metallurgical reaction in encapsulation process.The plasticity not too large impact added high purity indium of a small amount of fiber, and adding of fiber effectively can hinder material heat expansion, and the fiber implanted is as the reinforcing bar in concrete, serves significant invigoration effect to solder.Therefore, all advantages that fibre-reinforced high purity indium solder almost remains that high purity indium solder melt point is low, plasticity is good etc., again reduce thermal coefficient of expansion simultaneously, improve solder intensity, the combination property of solder is greatly improved.
The present invention has following characteristics:
1. adding of fiber good invigoration effect is served to high purity indium, form the compound interface layer of indium and fiber, semiconductor packages intensity is effectively promoted, improves non-deformability and the fatigue behaviour of encapsulation.
2. because fiber is covered with certain inhibition to high purity indium solder stream, suitably prevent the excessive trickling of high purity indium, thus make tube core lean out heat sink distance to reduce, improve the radiating efficiency of laser instrument.
3. the present invention does not need to change the encapsulation condition under high purity indium technique completely, remains the advantages such as low package temperature, good plasticity, good Ohmic contact and thermal conductivity.
Accompanying drawing explanation
Fig. 1 is the sectional view of short-fibre silk enhancing high purity indium composite solder prepared by the present invention.
Wherein: 1, high purity indium, 2, short-fibre silk.
Detailed description of the invention
Short-fibre silk of the present invention strengthens high purity indium composite solder in the form of sheets, and its cross section as shown in Figure 1, is that random distribution has short-fibre silk 2 in high purity indium 1, and short-fibre silk 2 can not interlock, entanglement is for cellosilk mass.Described short fiber is the toughness fiber that carbon fiber, glass fibre, ceramic fibre etc. do not react with indium.
The preparation process that above-mentioned short-fibre silk strengthens high purity indium composite solder is as follows:
1. carbon fiber, glass fibre or ceramic fibre are cut into the short-fibre silk 2 of single bundle or multi beam state, individual staple fibers length is less than 15-30 μm;
2., by the ratio mixing of high purity indium powder (200-400 order) and short-fibre silk 2 1:20-1:10 by volume, put into the dry pot of melting, and mix;
3. dry pot is put into refining furnace, first pumping high vacuum, is then filled with argon gas, avoids high purity indium to volatilize under vacuo;
4. heating makes high purity indium melt, and by magnetic agitation, makes molten indium drive short fiber flowing, thus makes short fiber random as far as possible uniform distribution in molten indium, obtains the compound indium solder that inside is distributed with short fiber after cooling;
5. utilize solder rolling equipment, the compound indium solder obtained is rolled into solder band;
6. the solder band obtained is become the solder sheet of arbitrary shape by required form punching.
During application, solder is placed between heat sink and chip of laser, welds under pure indium welding procedure.
For preventing fibre interferes laser instrument from going out light quality, the edge of solder sheet is concordant with the heat sink edge of light direction or inside contract 0mm-0.05mm.

Claims (6)

1. short-fibre silk strengthens a high purity indium composite solder, it is characterized in that, in high purity indium, is distributed with short-fibre silk.
2. short-fibre silk according to claim 1 strengthens high purity indium composite solder, it is characterized in that, described short-fibre silk adopts carbon fiber, glass fibre, ceramic fibre or other toughness fiber do not reacted with indium.
3. short-fibre silk according to claim 1 strengthens high purity indium composite solder, and it is characterized in that, described short-fibre silk is randomly dispersed within high purity indium.
4. short-fibre silk according to claim 1 strengthens high purity indium composite solder, and it is characterized in that, the volume ratio of described short-fibre silk and high purity indium is 1:20-1:10.
5. short-fibre silk according to claim 1 strengthens high purity indium composite solder, it is characterized in that, the length 15-30 μm of described short-fibre silk.
6. short-fibre silk described in claim 1 strengthens a preparation method for high purity indium composite solder, it is characterized in that, comprises the following steps:
(1) filament is cut into the short-fibre silk that length is 15-30 μm;
(2) by the ratio mixing of high purity indium powder and short-fibre silk 1:20-1:10 by volume, put into melting and do pot, and mix;
(3) dry pot is put into refining furnace, first pumping high vacuum, is then filled with argon gas, avoids high purity indium to volatilize under vacuo;
(4) heating makes high purity indium melt, and stirring makes short-fibre silk be distributed in molten indium, obtains the compound indium solder that inside is distributed with short-fibre silk after cooling.
CN201510046157.2A 2015-01-29 2015-01-29 Short filament reinforced high-purity indium composite solder and preparation method thereof Pending CN104708224A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
CN104708224A true CN104708224A (en) 2015-06-17

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107442924A (en) * 2016-05-31 2017-12-08 松下知识产权经营株式会社 Solder material
CN110666389A (en) * 2019-10-18 2020-01-10 郑州机械研究所有限公司 Fiber-toughened tungsten carbide welding rod
CN115024613A (en) * 2022-04-29 2022-09-09 大自然科技股份有限公司 Production process of 3E environment-friendly plant fiber mattress

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09295184A (en) * 1996-05-09 1997-11-18 Omron Corp Solder, circuit board on which electronic parts are mounted using the solder, and solder paste
CN101088697A (en) * 2001-05-07 2007-12-19 霍尼韦尔国际公司 Interface materials and methods of production and use thereof
JP2008036691A (en) * 2006-08-09 2008-02-21 Toyota Motor Corp Lead-free solder material, its production method, joined structure and electronic component packaging structure
CN101288928A (en) * 2008-05-09 2008-10-22 中国科学技术大学 Ceramic granule reinforced composite material
CN102689096A (en) * 2012-06-07 2012-09-26 哈尔滨工业大学 Method for laser-induced self-propagating connection between carbon fiber reinforced aluminum-based composite and metal

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09295184A (en) * 1996-05-09 1997-11-18 Omron Corp Solder, circuit board on which electronic parts are mounted using the solder, and solder paste
CN101088697A (en) * 2001-05-07 2007-12-19 霍尼韦尔国际公司 Interface materials and methods of production and use thereof
JP2008036691A (en) * 2006-08-09 2008-02-21 Toyota Motor Corp Lead-free solder material, its production method, joined structure and electronic component packaging structure
CN101288928A (en) * 2008-05-09 2008-10-22 中国科学技术大学 Ceramic granule reinforced composite material
CN102689096A (en) * 2012-06-07 2012-09-26 哈尔滨工业大学 Method for laser-induced self-propagating connection between carbon fiber reinforced aluminum-based composite and metal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107442924A (en) * 2016-05-31 2017-12-08 松下知识产权经营株式会社 Solder material
CN110666389A (en) * 2019-10-18 2020-01-10 郑州机械研究所有限公司 Fiber-toughened tungsten carbide welding rod
CN110666389B (en) * 2019-10-18 2021-07-02 郑州机械研究所有限公司 Fiber-toughened tungsten carbide welding rod
CN115024613A (en) * 2022-04-29 2022-09-09 大自然科技股份有限公司 Production process of 3E environment-friendly plant fiber mattress
CN115024613B (en) * 2022-04-29 2024-01-23 大自然科技股份有限公司 Production process of 3E environment-friendly plant fiber mattress

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
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Effective date of registration: 20151105

Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101

Applicant after: Shandong Huaguang Photoelectronic Co., Ltd.

Address before: 261061 Weifang high tech Zone, Jin Road, No. 9, No.

Applicant before: Shandong Inspur Huaguang Optoelectronics Co., Ltd.

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150617