CN104702226A - Improved cascode radio frequency power amplifier - Google Patents
Improved cascode radio frequency power amplifier Download PDFInfo
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- CN104702226A CN104702226A CN201510146793.2A CN201510146793A CN104702226A CN 104702226 A CN104702226 A CN 104702226A CN 201510146793 A CN201510146793 A CN 201510146793A CN 104702226 A CN104702226 A CN 104702226A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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Abstract
The invention discloses an improved cascode radio frequency power amplifier. A common-source-stage transistor grid electrode G1, a common-source-stage transistor source electrode S, a common-grid-stage transistor grid electrode G2 and a common-grid-stage transistor drain electrode D are transversely arranged on a substrate, a radio frequency input end RFin is connected with the common-source-stage transistor grid electrode G1 through a metal routing wire, the common-source-stage transistor source electrode S is connected with a grounding hole array through a metal routing wire, the common-grid-stage transistor grid electrode G2 is connected with a bias circuit through a metal routing wire, and the common-grid-stage transistor drain electrode D is connected with a radio frequency output end RFout through a metal routing wire. A cascode structure is adopted, and a layout structure is optimized, so that the improved cascode radio frequency power amplifier has the advantages of high gain, high power, high linearity, high efficiency and the like; layout area equivalent to that of a single-transistor common-source structure radio frequency power amplifier is maintained, so that low cost is realized.
Description
Technical field
the invention belongs to technical field of radio frequency integrated circuits, be specifically related to a kind of cascade radio-frequency power amplifier of improvement.
Background technology
radio-frequency power amplifier is requisite critical component in various wireless communications application, carries out power amplification for the brewed radiofrequency signal exported by transceiver, to meet the power requirement of the radiofrequency signal needed for radio communication.Radio-frequency power amplifier belongs to large-signal device, therefore requires that the semiconductor device for the manufacture of radio-frequency power amplifier has the characteristic such as high-breakdown-voltage, high current density.Relative to the small signal circuit such as digital circuit, analog circuit generally adopt based on Si CMOS technology, based on the technique such as HBT, pHEMT of GaAs material, the puncture voltage higher due to it and carrier mobility speed, be widely used in radio-frequency power amplifier field.
be illustrated in figure 1 a typical radio-frequency (RF) power amplifier circuit, transistor 103, as the important active device in radio-frequency power amplifier, adopts Si or GaAs manufacture technics in practice usually; The input signal port RFin of radio-frequency power amplifier is connected to the grid of transistor 103 by input matching network 101; The grid of transistor 103 is also connected to the bias voltage port Vbias of radio-frequency power amplifier by biasing circuit 102; The source electrode of transistor 103 is connected to ground; The drain electrode of transistor 103 is connected to the supply power voltage port Vcc of radio-frequency power amplifier by choke induction 104; Supply power voltage port Vcc is also connected to one end of decoupling capacitor 105, and other one end of decoupling capacitor 105 is connected to ground; The drain electrode of transistor 103 is also connected to the output signal port RFout of radio-frequency power amplifier by output matching network 106.The applied signal voltage amplitude of oscillation of radio-frequency power amplifier is lower, and after transistor 103 power amplification, the voltage swing of output signal significantly promotes.For a typical Class-A/B/AB radio-frequency power amplifier, work under supply power voltage Vcc, the voltage swing on transistor drain can reach 2 × Vcc usually.For example, when the supply power voltage Vcc of radio-frequency power amplifier is 5V, the voltage swing on transistor drain will reach 10V.If radio-frequency power amplifier works in Class-E state, the voltage swing so on transistor drain will be higher, reaches 3.5 × more than Vcc.As can be seen here, the transistor in radio-frequency power amplifier will bear the amplitude of oscillation far above supply power voltage, very high requirement is proposed to the puncture voltage of transistor and reliability.Select the semiconductor technology of enough high-breakdown-voltages to manufacture radio-frequency power amplifier, choice critical constraints will be made, lose design flexibility and will integrated level be reduced.
also may be used for make less puncture voltage semiconductor technology manufacturing radio-frequency power amplifier, industry is usually by being designed to the puncture voltage that cascodes improves device by radio-frequency (RF) power amplifier circuit.As shown in Figure 2, be the radio-frequency power amplifier of a typical cascodes.Transistor 203 and transistor 204 are the active device realizing power amplification in radio-frequency power amplifier, usually adopt Si or GaAs manufacture technics in practice; The input signal port RFin of radio-frequency power amplifier is connected to the grid of transistor 203 by input matching network 201; The grid of transistor 203 is also connected to the bias voltage port Vbias1 of radio-frequency power amplifier by biasing circuit 202; The source electrode of transistor 203 is connected to ground; The drain electrode of transistor 203 is connected to the source electrode of transistor 204; The grid of transistor 204 is connected to the bias voltage port Vbias2 of radio-frequency power amplifier by biasing circuit 205; The grid of transistor 204 is also connected to one end of decoupling capacitor 206, and other one end of decoupling capacitor 206 is connected to ground; The drain electrode of transistor 204 is connected to the supply power voltage port Vcc of radio-frequency power amplifier by choke induction 207; Supply power voltage port Vcc is also connected to one end of decoupling capacitor 208, and other one end of decoupling capacitor 208 is connected to ground; The drain electrode of transistor 207 is also connected to the output signal port RFout of radio-frequency power amplifier by output matching network 209.The applied signal voltage amplitude of oscillation of radio-frequency power amplifier is lower, and after transistor 203 and transistor 204 power amplification, the voltage swing of output signal significantly promotes.In cascodes radio-frequency power amplifier, transistor 203 is common-source stage, and transistor 204 is common gate; Such cascodes compares the reverse isolation degree that single-transistor common source configuration has higher power gain and Geng Gao; What is more important, cascodes has higher puncture voltage than single-transistor common source configuration, allows radio-frequency power amplifier to have higher operating voltage.
as shown in Figure 2, work in the cascodes radio-frequency power amplifier of Class-A/AB/B state, the radio-frequency voltage amplitude of oscillation that transistor 204 drains is 2 × Vcc, and the radio-frequency voltage amplitude of oscillation that transistor 203 drains then is no more than Vcc.Therefore, transistor 203 and the voltage swing of transistor 204 separately between drain electrode and source electrode are all no more than 2 × Vcc, ensure that transistor is in safety zone.
the layout design of semiconductor device is an operation necessary before prepared by chip, for the various piece of multiple identical transistor reasonably being distributed on a silicon substrate according to designed circuit.In layout design, the ultimate aim being minimised as designer of chip device area.
as shown in Figure 3 a, be a cascodes schematic diagram, be made up of common-source stage transistor 301 and common gate transistor 302; As shown in Figure 3 b, the circuit layout corresponding to this cascodes.In fig 3b, transistor 301 and transistor 302 are generally multiple-grid and refer to structure on domain, namely form the larger transistor of total grid width 301 and transistor 302 by the coupled in parallel of multiple less grid width.Radio-frequency input signals is connected to the grid of common-source stage transistor 301 by metal routing, and each grid of transistor refer to be labeled as G in fig 3b; The source electrode of common-source stage transistor 301 is connected to ground hole array 303 by metal routing, and the source electrode of transistor is labeled as S in fig 3b; The drain electrode of common-source stage transistor 301 is connected to the source electrode of common grid level transistor 302 by metal routing, the drain electrode of transistor is labeled as D in fig 3b; The grid of grid level transistor 302 is linked together by metal routing 304 altogether, carries out biased power supply for the grid for being total to grid level transistor 302; The drain electrode of grid level transistor 302 is linked together by metal routing altogether, and is connected to the output signal port RFout of radio-frequency power amplifier.
as from the foregoing, cascodes radio-frequency power amplifier is compared single-transistor common source configuration radio-frequency power amplifier and is had advantage in performance, but the chip area of cascodes is almost two times of single-transistor common source configuration, there is the cost higher than single-transistor common source configuration.
Summary of the invention
the present invention seeks to: the cascade radio-frequency power amplifier that a kind of improvement is provided, adopt cascodes, and optimize domain structure, this radio-frequency power amplifier is made to have the performance advantages such as high-gain, high power, high linearity, high efficiency, keep the chip area suitable with single-transistor common source configuration radio-frequency power amplifier again simultaneously, make it have cost advantage.
technical scheme of the present invention is:
a cascade radio-frequency power amplifier for improvement, substrate is laterally provided with common-source stage transistor gate G1, common-source stage transistor source S, altogether grid level transistor gate G2, altogether grid level transistor drain D; Rf inputs RFin connects common-source stage transistor gate G1 by metal routing, common-source stage transistor source S connects ground hole array by metal routing, grid level transistor gate G2 connects biasing circuit by metal routing altogether, and grid level transistor drain D connects radio-frequency (RF) output end RFout by metal routing altogether.
further, described common-source stage transistor is enhancement mode pHEMT transistor, and grid level transistor is depletion type pHEMT transistor altogether.
advantage of the present invention is:
1. double-gated transistor domain structure proposed by the invention has structure closely, simplify the annexation of traditional cascode transistors structure, thus the parasitic capacitance reduced on domain between each strip metal cabling, contribute to the performance promoting radio-frequency power amplifier; Prior, double-gate transistor structure compares traditional cascode transistors structure, and chip area can reduce at least 40%, even has suitable area with single-transistor common source configuration, has very high cost advantage.
common-source stage transistor is enhancement transistor, and grid level transistor is depletion mode transistor altogether, and radio-frequency power amplifier only needs positive voltage and can normally work without the need to negative voltage.Meanwhile, GaAs E/D pHEMT double-gated transistor greatly can also improve the leakage current characteristic of independent enhancement mode pHEMT device radio-frequency power amplifier.
Accompanying drawing explanation
below in conjunction with drawings and Examples, the invention will be further described:
fig. 1 is existing typical radio-frequency (RF) power amplifier circuit figure;
fig. 2 is the radio-frequency (RF) power amplifier circuit figure of existing typical cascodes;
fig. 3 a is the schematic diagram of the radio-frequency power amplifier of existing typical cascodes;
fig. 3 b is the circuit layout of the radio-frequency power amplifier of existing typical cascodes;
fig. 4 a is the equivalent schematic diagram of the radio-frequency power amplifier of cascodes of the present invention;
fig. 4 b is the circuit layout of the radio-frequency power amplifier of cascodes of the present invention;
fig. 4 c is the profile of the radio-frequency power amplifier of cascodes of the present invention.
Embodiment
for making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with embodiment also with reference to accompanying drawing, the present invention is described in more detail.Should be appreciated that, these describe just exemplary, and do not really want to limit the scope of the invention.In addition, in the following description, the description to known features and technology is eliminated, to avoid unnecessarily obscuring concept of the present invention.
embodiment 1:
as shown in fig. 4 a, in principle, can be a transistor with four ports by a cascode transistors designs simplification: common-source stage transistor gate G1, common-source stage transistor source S, altogether grid level transistor gate G2, altogether grid level transistor drain D.The source electrode of the drain electrode of common-source stage transistor grid level transistor together links together, and without the need to having annexation with the external world, therefore this node on circuit also without the need to embodying; This cascode transistors structure as shown in fig. 4 a, is defined as " double-gated transistor " in the present invention.
be the domain structure of double-gated transistor proposed by the invention as shown in Figure 4 b.Double-gated transistor 401 is depicted as common multiple-grid and refers to structure on domain, namely forms the larger transistor of total grid width 401 by the coupled in parallel of multiple less grid width.Radio-frequency input signals RFin is connected to the common-source stage transistor gate G1 of double-gated transistor 401 by metal routing; Common-source stage transistor source S is connected to ground hole array 402 by metal routing, and grid level transistor gate G2 is linked together by metal routing 403 altogether, for carrying out biased power supply for being total to grid level transistor gate G2; Grid level transistor drain D is linked together by metal routing altogether, and is connected to the output signal port RFout of radio-frequency power amplifier.
as illustrated in fig. 4 c, be the profile of double-gate transistor structure, semiconductor structure which omits the port deriving structure of common-source stage transistor drain-common this node of grid level transistor source.
to sum up, double-gated transistor domain structure proposed by the invention has structure closely, simplify the annexation of traditional cascode transistors structure, thus reduce the parasitic capacitance on domain between each strip metal cabling, contribute to the performance promoting radio-frequency power amplifier; Prior, double-gate transistor structure compares traditional cascode transistors structure, and chip area can reduce at least 40%, even has suitable area with single-transistor common source configuration, has very high cost advantage.
as a specific embodiment of the present invention, double-gated transistor can adopt that GaAs enhancing/depletion type is counterfeit joins high electron mobility field-effect transistor technique to manufacture, i.e. GaAs E/D pHEMT double-gated transistor.Further, the common-source stage of double-gated transistor adopts enhancement mode pHEMT device, and grid level adopts depletion type pHEMT device altogether.Under such a configuration, double-gated transistor has very high puncture voltage, may be used for the application of high supply power voltage; Thus double-gated transistor also has higher power output tolerance limit, and the index such as higher gain characteristic, reverse isolation degree.Because GaAs E/D pHEMT double-gated transistor common-source stage is enhancement transistor, grid level is depletion mode transistor altogether, and radio-frequency power amplifier only needs positive voltage and can normally work without the need to negative voltage.Meanwhile, GaAs E/D pHEMT double-gated transistor greatly can also improve the leakage current characteristic of independent enhancement mode pHEMT device radio-frequency power amplifier.
should be understood that, above-mentioned embodiment of the present invention only for exemplary illustration or explain principle of the present invention, and is not construed as limiting the invention.Therefore, any amendment made when without departing from the spirit and scope of the present invention, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.In addition, claims of the present invention be intended to contain fall into claims scope and border or this scope and border equivalents in whole change and modification.
Claims (2)
1. the cascade radio-frequency power amplifier improved, is characterized in that, substrate is laterally provided with common-source stage transistor gate G1, common-source stage transistor source S, altogether grid level transistor gate G2, altogether grid level transistor drain D; Rf inputs RFin connects common-source stage transistor gate G1 by metal routing, common-source stage transistor source S connects ground hole array by metal routing, grid level transistor gate G2 connects biasing circuit by metal routing altogether, and grid level transistor drain D connects radio-frequency (RF) output end RFout by metal routing altogether.
2. the cascade radio-frequency power amplifier of improvement according to claim 1, is characterized in that, described common-source stage transistor is enhancement mode pHEMT transistor, and grid level transistor is depletion type pHEMT transistor altogether.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510146793.2A CN104702226A (en) | 2015-03-31 | 2015-03-31 | Improved cascode radio frequency power amplifier |
| PCT/CN2016/077787 WO2016155612A1 (en) | 2015-03-31 | 2016-03-30 | Improved cascode radio frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510146793.2A CN104702226A (en) | 2015-03-31 | 2015-03-31 | Improved cascode radio frequency power amplifier |
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| CN104702226A true CN104702226A (en) | 2015-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510146793.2A Pending CN104702226A (en) | 2015-03-31 | 2015-03-31 | Improved cascode radio frequency power amplifier |
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Cited By (9)
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|---|---|---|---|---|
| CN105490646A (en) * | 2015-11-24 | 2016-04-13 | 广州一芯信息科技有限公司 | Common-source common-gate amplifier and common-emitter common-gate amplifier |
| CN105720936A (en) * | 2016-01-21 | 2016-06-29 | 中国电子科技集团公司第二十四研究所 | Transconductance amplifier based on self-bias common-source and common-gate structure |
| WO2016155612A1 (en) * | 2015-03-31 | 2016-10-06 | 宜确半导体（苏州）有限公司 | Improved cascode radio frequency power amplifier |
| CN106788275A (en) * | 2015-11-20 | 2017-05-31 | 厦门宇臻集成电路科技有限公司 | A kind of enhanced HEMT power amplifier circuits of cascade |
| CN108574466A (en) * | 2018-07-23 | 2018-09-25 | 上海艾为电子技术股份有限公司 | A kind of radio frequency low-noise amplifier |
| CN112564635A (en) * | 2020-12-10 | 2021-03-26 | 广东工业大学 | LNA-oriented gain-increasing and noise-reducing circuit |
| CN108292907B (en) * | 2015-12-08 | 2021-07-16 | 三菱电机株式会社 | Power amplifier |
| CN116667801A (en) * | 2023-07-28 | 2023-08-29 | 宜确半导体（苏州）有限公司 | Radio frequency power amplifier, semiconductor die and electronic equipment |
| CN117439556A (en) * | 2023-12-22 | 2024-01-23 | 成都天成电科科技有限公司 | Cascode amplifier circuit and circuit layout |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016155612A1 (en) * | 2015-03-31 | 2016-10-06 | 宜确半导体（苏州）有限公司 | Improved cascode radio frequency power amplifier |
| CN106788275A (en) * | 2015-11-20 | 2017-05-31 | 厦门宇臻集成电路科技有限公司 | A kind of enhanced HEMT power amplifier circuits of cascade |
| CN105490646B (en) * | 2015-11-24 | 2018-04-06 | 广州一芯信息科技有限公司 | Common source and common grid amplifier and cascode cathode-input amplifier |
| CN105490646A (en) * | 2015-11-24 | 2016-04-13 | 广州一芯信息科技有限公司 | Common-source common-gate amplifier and common-emitter common-gate amplifier |
| CN108292907B (en) * | 2015-12-08 | 2021-07-16 | 三菱电机株式会社 | Power amplifier |
| CN105720936A (en) * | 2016-01-21 | 2016-06-29 | 中国电子科技集团公司第二十四研究所 | Transconductance amplifier based on self-bias common-source and common-gate structure |
| CN105720936B (en) * | 2016-01-21 | 2018-01-09 | 中国电子科技集团公司第二十四研究所 | A kind of trsanscondutance amplifier based on automatic biasing cascode structure |
| CN108574466A (en) * | 2018-07-23 | 2018-09-25 | 上海艾为电子技术股份有限公司 | A kind of radio frequency low-noise amplifier |
| CN108574466B (en) * | 2018-07-23 | 2023-10-20 | 上海艾为电子技术股份有限公司 | Radio frequency low noise amplifier |
| CN112564635A (en) * | 2020-12-10 | 2021-03-26 | 广东工业大学 | LNA-oriented gain-increasing and noise-reducing circuit |
| CN116667801A (en) * | 2023-07-28 | 2023-08-29 | 宜确半导体（苏州）有限公司 | Radio frequency power amplifier, semiconductor die and electronic equipment |
| CN116667801B (en) * | 2023-07-28 | 2023-10-20 | 宜确半导体（苏州）有限公司 | Radio frequency power amplifier, semiconductor die and electronic equipment |
| CN117439556A (en) * | 2023-12-22 | 2024-01-23 | 成都天成电科科技有限公司 | Cascode amplifier circuit and circuit layout |
| CN117439556B (en) * | 2023-12-22 | 2024-03-05 | 成都天成电科科技有限公司 | Cascode amplifier circuit and circuit layout |
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| WO2016155612A1 (en) | 2016-10-06 |
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