CN104701264A - Organic light emitting diode display panel and manufacturing method thereof and display device - Google Patents
Organic light emitting diode display panel and manufacturing method thereof and display device Download PDFInfo
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Abstract
The invention discloses an organic light emitting diode display panel and a manufacturing method thereof and a display device which are used for achieving decrease of process steps and reduction of production cost. The manufacturing method comprises the steps of depositing a metal film layer on a substrate, forming a source electrode, a leakage electrode and a reflection anode of a pixel area by adopting a picture composition process and forming a metal film layer to be processed of a semiconductor active layer between the source electrode and the leakage electrode, coating photoresist on the substrate subjected to the steps, exposing and developing the photoresist to expose the metal film layer to be processed, conducting oxidation on the exposed metal film layer to be processed, conducting ion implantation on the substrate subjected to the steps, and performing annealing treatment to form the semiconductor active layer.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of organic LED display panel and preparation method thereof, display unit.
Background technology
At present, Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) flat-panel monitor is towards large scale, high-resolution future development, rate of good quality rate, the mass production of low cost is at each major company iterative method, and thin film transistor (TFT) array technique (TFT Array) plays a part key in flat panel display mass production.As compared to amorphous silicon film transistor (Thin Film Transistor, TFT), the carrier mobility of oxide TFT is up to 10cm
2/ Vs is the former about 10 times; Therefore the mass production of oxide TFT becomes particularly important, and in the mass production process of still jejune oxide TFT backplate, reducing processing step, controlling cost is the problem needing to solve always.
Introduce the method that prior art makes 2T1C organic LED display panel below.As shown in Figure 1, first, underlay substrate 10 deposits layer of metal film, by first time patterning processes, form the grid 11 of switching tube and the grid 12 of driving tube.Then, the grid 11 of switching tube and the grid 12 of driving tube make gate insulator 13, gate insulator 13 makes semiconductor active layer 14 by second time patterning processes, and the material of semiconductor active layer 14 is indium gallium zinc oxide (IGZO).Then, deposition-etch barrier layer 15 on semiconductor active layer 14, by two via holes 151 and 152 in left side in third time patterning processes construction drawing 1, and by the via hole 153 on right side in the 4th patterning processes construction drawing 1.
As shown in Figure 2, etching barrier layer 15 deposits layer of metal film, by the 5th patterning processes, switching tube in formation source electrode 16, drain electrode 17 and connection display floater and the lead-in wire 18 of driving tube, source electrode 16 is contacted with oxide semiconductor active layer 14 by via hole 151, and drain electrode 17 is contacted with oxide semiconductor active layer 14 by via hole 152.Then, source electrode 16 and drain electrode 17 make passivation layer 19 and organic film 110.Finally, organic film 110 passes through the reflection anode 111 of the pixel region of the 6th patterning processes making OLED display panel.Wherein, above-described patterning processes comprises the coating of photoresist, exposure, development, etching and remove the process of photoresist.
In sum, prior art organic LED display panel is in manufacturing process, and whole process need adopts six road mask plates to complete, and graphical more with etching number of times in manufacturing process, and processing step is complicated, and cost is higher.
Summary of the invention
Embodiments provide a kind of organic LED display panel and preparation method thereof, display unit, in order to realize reducing processing step, reduce the object of production cost.
The manufacture method of a kind of organic LED display panel that the embodiment of the present invention provides, wherein, described method comprises:
Underlay substrate deposits layer of metal thin layer;
The reflection anode of source electrode, drain electrode, pixel region is formed by patterning processes, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer;
The underlay substrate completing above-mentioned steps applies photoresist, described photoresist is exposed, developed, expose described pending metal film layer;
Oxidation processes is carried out to the described pending metal film layer exposed;
Ion implantation is carried out to the underlay substrate completing above-mentioned steps, and carries out annealing in process, form semiconductor active layer.
The manufacture method of the organic LED display panel provided by the embodiment of the present invention, because the method comprises: form source electrode by patterning processes, drain electrode, the reflection anode of pixel region, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer, like this, the embodiment of the present invention is at making source electrode, mask plate together with only needing during the reflection anode of drain electrode with pixel region, source electrode is being made with prior art, twice mask plate is needed to compare during the reflection anode of drain electrode with pixel region, the quantity of mask plate can be reduced, reduce production cost, because the manufacture method of embodiment of the present invention organic LED display panel comprises: apply photoresist on the underlay substrate completing above-mentioned steps, described photoresist is exposed, developed, expose described pending metal film layer, oxidation processes is carried out to the described pending metal film layer exposed, ion implantation is carried out to the underlay substrate completing above-mentioned steps, and carry out annealing in process, form semiconductor active layer, compared with prior art, the embodiment of the present invention does not need to deposit thin film more separately when making semiconductor active layer, do not need to etch, therefore, it is possible to reduce processing step, reduce production cost yet, and the source electrode of embodiment of the present invention making, drain electrode and semiconductor active layer are positioned at same layer, compared with prior art, can omit the making of etching barrier layer, therefore, it is possible to reduce processing step, reduce production cost.
Preferably, the material of described metal film layer is aluminium.
Preferably, the material of described semiconductor active layer is gallium aluminium zinc oxide, or is aluminium zinc oxide.
Preferably, the described reflection anode being formed source electrode, drain electrode, pixel region by patterning processes, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer, comprising:
Described metal film layer applies photoresist, described photoresist is exposed, developed, form the photoresist area of coverage and photoresist removal district, the described photoresist area of coverage comprises to be needed to form source electrode, drain electrode, the reflection anode of pixel region and the region of pending metal film layer;
By etching, remove the metal film layer that district removed by photoresist;
Remove residue photoresist, the reflection anode of formation source electrode, drain electrode, pixel region and pending metal film layer.
Preferably, before underlay substrate deposits layer of metal thin layer, described method also comprises:
On described underlay substrate, grid is made by patterning processes;
Described grid makes gate insulator.
Preferably, describedly on described underlay substrate, grid is made by patterning processes; Described grid makes gate insulator, specifically comprises:
On underlay substrate, make the grid of the first film transistor and the grid of the second thin-film transistor by first time patterning processes, wherein, described the first film transistor is used as switching tube, and described second thin-film transistor is used as driving tube;
The grid of described the first film transistor and the grid of described second thin-film transistor make gate insulator, made the via hole running through described gate insulator by second time patterning processes, described via hole exposes the grid of described second thin-film transistor of part; Described via hole is used for described the first film transistor and described second thin-film transistor being electrically connected by the metal film layer of subsequent deposition.
Preferably, after described formation semiconductor active layer, described method also comprises:
The underlay substrate being formed with semiconductor active layer makes passivation layer.
The embodiment of the present invention additionally provides a kind of organic LED display panel, and described organic LED display panel is adopt said method to make the organic LED display panel obtained.
The embodiment of the present invention additionally provides a kind of display unit, and described display unit comprises above-mentioned organic LED display panel.
Accompanying drawing explanation
Fig. 1 is the cross section structure schematic diagram of the organic LED display panel after prior art making etching barrier layer;
Fig. 2 is the cross section structure schematic diagram of the organic LED display panel that prior art makes;
The manufacture method flow chart of a kind of organic LED display panel that Fig. 3 provides for the embodiment of the present invention;
Fig. 4-Figure 11 is respectively the structural representation of the different manufacturing process of making organic LED display panel that the embodiment of the present invention provides.
Embodiment
Embodiments provide a kind of organic LED display panel and preparation method thereof, display unit, in order to realize reducing processing step, reduce the object of production cost.
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail, and obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
Organic LED display panel that the specific embodiment of the invention provides and preparation method thereof is introduced in detail below in conjunction with accompanying drawing.
As shown in Figure 3, the specific embodiment of the invention provides a kind of manufacture method of organic LED display panel, and described method comprises:
S301, on underlay substrate, deposit layer of metal thin layer;
S302, formed the reflection anode of source electrode, drain electrode, pixel region by patterning processes, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer;
S303, on the underlay substrate completing above-mentioned steps, apply photoresist, described photoresist is exposed, developed, exposes described pending metal film layer;
S304, oxidation processes is carried out to the described pending metal film layer exposed;
S305, ion implantation is carried out to the underlay substrate completing above-mentioned steps, and carry out annealing in process, form semiconductor active layer.
The manufacturing process of the organic LED display panel that the specific embodiment of the invention provides is introduced in detail below in conjunction with accompanying drawing.
The structure of the thin-film transistor that the organic LED display panel that the specific embodiment of the invention provides comprises can be both top gate type, and also can be bottom gate type, the specific embodiment of the invention be only specifically introduced for the thin-film transistor of bottom gate type.
In addition, in order to compared with prior art, the manufacturing process of the organic LED display panel that the specific embodiment of the invention provides is introduced for the manufacturing process of the organic LED display panel of 2T1C.
As shown in Figure 4, first on underlay substrate 10, deposit layer of metal film, the underlay substrate 10 in the specific embodiment of the invention is glass substrate, and certainly, in actual production process, underlay substrate 10 can also be the substrate of other types such as ceramic substrate.The material of the metallic film of specific embodiment of the invention deposition can be molybdenum (Mo), and when specifically implementing, the material of the metallic film of deposition can be identical with the material of the metallic film that prior art deposits.Form the grid 41 of the first film transistor and the grid 42 of the second thin-film transistor to the metallic film of deposition on underlay substrate 10 by first time patterning processes, wherein, the first film transistor is used as switching tube, and the second thin-film transistor is used as driving tube.It is identical with the process of the grid 12 of driving tube that the grid 41 of specific embodiment of the invention making the first film transistor and the detailed process of the grid 42 of the second thin-film transistor and prior art make the grid 11 of switching tube, repeats no more here.
As shown in Figure 5, underlay substrate shown in Fig. 4 makes gate insulator 13, the material of the gate insulator 13 in the specific embodiment of the invention can be silica, silicon nitride or silicon oxynitride, and the concrete manufacturing process of gate insulator 13 is same as the prior art, repeats no more here.
Then, the via hole 50 running through gate insulator 13 is made by second time patterning processes, second time patterning processes in the specific embodiment of the invention is included on gate insulator 13 and applies photoresist, the photoresist of coating is exposed, development, the photoresist of specific embodiment of the invention coating is for positive photoresist introduction, after development, reservation does not need the photoresist making via hole position, expose the gate insulator needing to make via hole position, by etching, remove the gate insulator exposed, form via hole 50, expose the grid of part second thin-film transistor in the position of via hole 50 in the specific embodiment of the invention.
As shown in Figure 6, the underlay substrate shown in Fig. 5 deposits layer of metal thin layer 60, via hole 50 is for being electrically connected the first film transistor 61 and the second thin-film transistor 62 by metal film layer 60.Preferably, the material of the metal film layer 60 of specific embodiment of the invention deposition is aluminium (Al).Then, metal film layer 60 is formed to the reflection anode of source electrode, drain electrode, pixel region by patterning processes, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer.
Particularly, as shown in Figure 7, the metal film layer 60 that deposition obtains applies photoresist, and the photoresist of coating is exposed, development, form the photoresist area of coverage and photoresist removal district, wherein, the photoresist area of coverage comprises the region 70 needing to form source electrode, need the region 71 forming drain electrode, need to form the pixel region 30 of reflection anode and the region 72 of pending metal film layer, the subregion of the photoresist area of coverage is illustrate only in Fig. 7 of the specific embodiment of the invention, in actual production process, the photoresist area of coverage and photoresist are removed district and can be designed according to the needs of product, specific design is not improvement of the present invention, here be not described in detail.Then, by etching, removing the metal film layer that district removed by photoresist, finally, removing residue photoresist, the reflection anode 34 of formation source electrode 32, drain electrode 33, pixel region 30 and pending metal film layer 73.The specific embodiment of the invention makes the plane structure chart of the organic LED display panel after source electrode 32, drain electrode 33, the reflection anode 34 of pixel region 30 and pending metal film layer 73 as shown in Figure 8, the reflection anode 34 of pixel region 30 has been shown in Fig. 8, run through the via hole 50 of gate insulator 13, and with source electrode 32, drain 33 data wires simultaneously produced 80.
As shown in Figure 9, on the underlay substrate shown in Fig. 7, coating photoresist 90, and photoresist 90 is exposed, developed, expose pending metal film layer.Then, oxidation processes is carried out, in concrete production process to the pending metal film layer exposed, oxidation technology can be adopted to be oxidized the metal film layer exposed, certainly, in actual production process, other method also can be adopted to be oxidized the metal film layer exposed.Finally, ion implantation is carried out to the underlay substrate completing above-mentioned steps, annealing in process is carried out after ion implantation, form semiconductor active layer 31, in ion implantation process, the region having photoresist 90 to protect can be considered to do not have ion implantation, and without photoresist protection region in have ion implantation, namely ion implantation is had in pending metal film layer, ion implantation device can be adopted particularly to carry out ion implantation, certainly, in actual production process, also other method and apparatus can be adopted to carry out ion implantation, in addition, the specific embodiment of the invention is not construed as limiting the concrete ion injected, as long as after injection ion and annealed process, pending metal film layer can be made to have the characteristic of semiconductor active layer.In addition, the annealing process after ion implantation, can adopt the conventional annealing treating process of prior art to carry out, not repeat here.Finally, remove remaining photoresist, form source electrode 32 that same layer makes, drain electrode 33, the reflection anode 34 of pixel region 30 and semiconductor active layer 31.Because source electrode 32 of the prior art, drain electrode 33 and semiconductor active layer 31 are positioned at different layers, therefore need to make one deck etching barrier layer, and source electrode 32 in the specific embodiment of the invention, drain electrode 33 and semiconductor active layer 31 are positioned at same layer, compared with prior art, the making of etching barrier layer can be omitted, reduce processing step, and need when making semiconductor active layer 31 with prior art to carry out etching phase ratio, the specific embodiment of the invention does not need to etch when making semiconductor active layer 31, can processing step be reduced equally, reduce production cost.The specific embodiment of the invention makes the plane structure chart of the organic LED display panel after semiconductor active layer 31 as shown in Figure 10.
During concrete enforcement, the material of the metal film layer deposited on the underlay substrate shown in Fig. 5 in the specific embodiment of the invention is Al.The material of the pending metal film layer formed by patterning processes is also Al, alundum (Al2O3) (Al2O3) thin layer is formed after afterwards the Al thin layer exposed being oxidized, then the method for ion implantation is adopted to carry out ion implantation to Al2O3 thin layer, preferably, the element injected when specific embodiment of the invention intermediate ion injects is zinc (Zn) element, or be gallium (Ga) element and zinc (Zn) element, carry out annealing in process after ion implantation, form semiconductor active layer.When the element injected in the specific embodiment of the invention be Ga element and Zn element time, the material of the semiconductor active layer formed is gallium aluminium zinc oxide (AlGZO), when the element injected in the specific embodiment of the invention is Zn element, the material of the semiconductor active layer of formation is aluminium zinc oxide (AZO).Certainly, in actual production process, in ion implantation process, other element can also be injected, as long as after injecting element, and annealed process, Al2O3 can be made to have the characteristic of semiconductor active layer.
Finally, as shown in figure 11, the specific embodiment of the invention makes passivation layer 19 on the underlay substrate forming semiconductor active layer 31, and the detailed process that the specific embodiment of the invention makes passivation layer 19 is same as the prior art, repeats no more here.
In sum, the specific embodiment of the invention provides a kind of organic LED display panel and preparation method thereof, and the manufacture method of organic LED display panel comprises: on underlay substrate, deposit layer of metal thin layer; The reflection anode of source electrode, drain electrode, pixel region is formed by patterning processes, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer; The underlay substrate completing above-mentioned steps applies photoresist, described photoresist is exposed, developed, expose described pending metal film layer; Oxidation processes is carried out to the described pending metal film layer exposed; Ion implantation is carried out to the underlay substrate completing above-mentioned steps, and carries out annealing in process, form semiconductor active layer.Due in the method, make semiconductor active layer, source electrode, drain electrode and pixel region reflection anode time, use only a minor metal deposition, metal as deposited in the specific embodiment of the invention is Al, and the process through the organic LED display panel of said method making has the following advantages:
First, source electrode, drain electrode deposit with the material of semiconductor active layer simultaneously, need to distinguish sedimentary facies ratio, decrease processing step with prior art metal and semiconductor active layer; Secondly, compared with prior art, the making of etching barrier layer is decreased; Again, adopt Al as reflective anode materials, formed with source-drain electrode simultaneously, do not need extra manufacture craft; Finally, in whole manufacturing process, only need four patterning processes, compared with needing six patterning processes with prior art, decrease processing step, reduce production cost.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. a manufacture method for organic LED display panel, is characterized in that, described method comprises:
Underlay substrate deposits layer of metal thin layer;
The reflection anode of source electrode, drain electrode, pixel region is formed by patterning processes, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer;
The underlay substrate completing above-mentioned steps applies photoresist, described photoresist is exposed, developed, expose described pending metal film layer;
Oxidation processes is carried out to the described pending metal film layer exposed;
Ion implantation is carried out to the underlay substrate completing above-mentioned steps, and carries out annealing in process, form semiconductor active layer.
2. manufacture method according to claim 1, is characterized in that, the material of described metal film layer is aluminium.
3. manufacture method according to claim 1, is characterized in that, the material of described semiconductor active layer is gallium aluminium zinc oxide, or is aluminium zinc oxide.
4. manufacture method according to claim 1, it is characterized in that, the described reflection anode being formed source electrode, drain electrode, pixel region by patterning processes, and between described source electrode and described drain electrode, for the formation of the pending metal film layer of semiconductor active layer, comprising:
Described metal film layer applies photoresist, described photoresist is exposed, developed, form the photoresist area of coverage and photoresist removal district, the described photoresist area of coverage comprises to be needed to form source electrode, drain electrode, the reflection anode of pixel region and the region of pending metal film layer;
By etching, remove the metal film layer that district removed by photoresist;
Remove residue photoresist, the reflection anode of formation source electrode, drain electrode, pixel region and pending metal film layer.
5. manufacture method according to claim 1, is characterized in that, before underlay substrate deposits layer of metal thin layer, described method also comprises:
On described underlay substrate, grid is made by patterning processes;
Described grid makes gate insulator.
6. manufacture method according to claim 5, is characterized in that, describedly on described underlay substrate, makes grid by patterning processes; Described grid makes gate insulator, specifically comprises:
On underlay substrate, make the grid of the first film transistor and the grid of the second thin-film transistor by first time patterning processes, wherein, described the first film transistor is used as switching tube, and described second thin-film transistor is used as driving tube;
The grid of described the first film transistor and the grid of described second thin-film transistor make gate insulator, made the via hole running through described gate insulator by second time patterning processes, described via hole exposes the grid of described second thin-film transistor of part; Described via hole is used for described the first film transistor and described second thin-film transistor being electrically connected by the metal film layer of subsequent deposition.
7. manufacture method according to claim 1, is characterized in that, after described formation semiconductor active layer, described method also comprises:
The underlay substrate being formed with semiconductor active layer makes passivation layer.
8. an organic LED display panel, is characterized in that, described organic LED display panel makes for adopting method described in the arbitrary claim of claim 1-7 the organic LED display panel obtained.
9. a display unit, is characterized in that, described display unit comprises organic LED display panel according to claim 8.
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| CN110047848A (en) * | 2019-04-02 | 2019-07-23 | 深圳市华星光电技术有限公司 | A kind of array substrate and preparation method thereof |
| CN110796949A (en) * | 2019-11-08 | 2020-02-14 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof, mother board, display panel and display device |
| CN113571536A (en) * | 2021-07-26 | 2021-10-29 | 京东方科技集团股份有限公司 | Photoelectron integrated substrate, manufacturing method thereof and photoelectron integrated circuit |
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