CN104698630B - Array base palte and display device - Google Patents
Array base palte and display device Download PDFInfo
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- CN104698630B CN104698630B CN201510144038.0A CN201510144038A CN104698630B CN 104698630 B CN104698630 B CN 104698630B CN 201510144038 A CN201510144038 A CN 201510144038A CN 104698630 B CN104698630 B CN 104698630B
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- layer
- array base
- base palte
- organic insulator
- passivation layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of array base palte and display device, effectively to reduce the parasitic capacitance of data wire and public electrode in array base palte, and then reduces the driving delay of data wire, increases liquid crystal drive ability.A kind of array base palte provided by the invention, including：Substrate and the grid line layer being sequentially formed on the substrate, gate insulator, active layer, data line layer, the first passivation layer, pixel electrode, the second passivation layer and public electrode, first passivation layer are organic insulator.
Description
Technical field
The present invention relates to display device technology field, more particularly to a kind of array base palte and display device.
Background technology
In panel display apparatus, thin-film transistor LCD device (Thin Film Transistor Liquid
Crystal Display, abbreviation TFT-LCD) there is small volume, low in energy consumption, manufacturing cost is relatively low and radiationless,
Leading position is occupied in current panel display apparatus market.
Liquid crystal panel generally has upper substrate and infrabasal plate, has certain intervals each other, liquid crystal is filled between upper and lower base plate.
Pass through the public electrode to upper and lower substrate and pixel electrode and apply voltage, you can change the arrangement of liquid crystal molecule so as to control light
Transmission, different voltage is set on each pixel and coordinates uniform backlight, you can realize the display of different GTGs, if
The combination of different light intensity is formed plus the optical filter of three kinds of colors of red, green, blue, you can shows specific colour picture.
At present, TFT-LCD display pattern mainly has twisted-nematic (Twisted Nematic, TN) pattern, vertical orientated
(Vertical Alignment, VA) pattern, in-plane conversion (In-Plane-Switching, IPS) pattern and advanced super
Field switch technology (ADvanced Super Dimension Switch, AD-SDS, the abbreviation ADS) pattern of dimension etc..
Wherein, display device based on ADS patterns by electric field caused by gap electrode edge in same plane and
Electric field forms multi-dimensional electric field caused by gap electrode layer and plate electrode interlayer, make in liquid crystal cell between gap electrode, electrode just on
Fang Suoyou aligned liquid-crystals molecule can produce rotation, so as to improve liquid crystal operating efficiency and increase light transmission efficiency.It is advanced
Super dimension field switch technology can improve the picture quality of TFT-LCD products, and there is high-resolution, high transmittance, low-power consumption, width to regard
The advantages that angle, high aperture, low aberration, ripple without water of compaction (push Mura).
For fringe field switching (FFS) wide viewing angle Display Technique, it is necessary to by the public electrode of upper substrate and the picture of infrabasal plate
Plain electrode is all made on infrabasal plate, and described infrabasal plate is array base palte.But in viewing area, public electrode and data wire it
Between can have parasitic capacitance, the parasitic capacitance bears the driving as the driving load of data wire and infrabasal plate public electrode wire
Carry, while the delay of data line signal can be caused., can be with if the inorganic insulation layer between data wire and infrabasal plate is done into thickness
This parasitic capacitance is reduced, but can also reduce the driving electric field between pixel electrode and common electrode simultaneously, is come to drive belt bigger
Load pressure.
The content of the invention
The embodiments of the invention provide a kind of array base palte and display device, effectively to reduce data wire in array base palte
Driving with the parasitic capacitance of public electrode, and then reduction data wire postpones, and increases liquid crystal drive ability.
A kind of array base palte provided in an embodiment of the present invention, including：Substrate and the grid being sequentially formed on the substrate
Line layer, gate insulator, active layer, data line layer, the first passivation layer, pixel electrode, the second passivation layer and public electrode are described
First passivation layer is organic insulator.
The embodiment of the present invention by the first passivation layer by existing inorganic insulation layer replace with dielectric constant it is smaller it is organic absolutely
Edge layer, this organic insulator is compared with the silicon nitride inorganic insulation layer of routine, almost with identical transmitance, therefore, this hair
The array base palte that bright embodiment provides, inorganic insulation layer is replaced using organic insulator, due to organic insulator dielectric constant more
It is small, on the premise of transmitance is ensured, it is possible to reduce the parasitic capacitance between the public electrode and data wire of array base palte, and then
Reduce the driving delay of data wire, increase liquid crystal drive ability.
It is preferred that the material of the organic insulator is phenylpropyl alcohol cyclobutane or allyl resin.
It is preferred that the thickness of the organic insulator is between 1.5 microns to 2.5 microns.
It is preferred that the thickness of the organic insulator is 2 microns.
It is preferred that the upper surface and/or lower surface of the organic insulator include bulge-structure.
It is preferred that the bulge-structure is wavy bulge structure.Thus, it is possible to improve the transmitance of light, further drop
Low display energy consumption.
It is preferred that second passivation layer is inorganic insulation layer.
It is preferred that the inorganic insulation layer is the folded of silicon nitride layer or silicon dioxide layer or silicon nitride and silica
Layer.
A kind of display device provided in an embodiment of the present invention, including described array base palte provided in an embodiment of the present invention.
It is preferred that the display device is thin-film transistor LCD device.
Brief description of the drawings
Fig. 1 is a kind of structural representation of array base palte provided in an embodiment of the present invention；
Fig. 2 is raising effect diagram of the array base palte provided in an embodiment of the present invention to transmitance.
Embodiment
The embodiments of the invention provide a kind of array base palte and display device, effectively to reduce data wire in array base palte
Driving with the parasitic capacitance of public electrode, and then reduction data wire postpones, and increases liquid crystal drive ability.
The embodiment of the present invention replaces inorganic insulation layer using the smaller organic insulator of dielectric constant, this organic insulator with
Conventional silicon nitride inorganic insulation layer is compared, and is that the organic insulator of 10 times of silicon nitride thickness almost has identical transmitance.
Then can again may be used using this organic insulator while the parasitic capacitance between array base palte public electrode and data wire is reduced
To reduce the thickness of the inorganic insulation layer between pixel electrode and public electrode.Both shadow of the parasitic capacitance to pixel voltage had been reduced
Ring, improve the driving force of liquid crystal again.
Referring to Fig. 1, a kind of array base palte provided in an embodiment of the present invention, including：Substrate and it is sequentially formed in the substrate
On grid line layer 1, gate insulator 4, active layer 2, data line layer 3, the first passivation layer 5, pixel electrode 6, the second passivation layer 7
With public electrode 8, first passivation layer 5 is organic insulator.
The embodiment of the present invention is by the first passivation layer 5 between pixel electrode 6 and data line layer 3 by existing inorganic insulation layer
The smaller organic insulator of dielectric constant is replaced with, this organic insulator is compared with the silicon nitride inorganic insulation layer of routine, almost
With identical transmitance, therefore, array base palte provided in an embodiment of the present invention, inorganic insulation is replaced using organic insulator
Layer, because organic insulator dielectric constant is smaller, on the premise of transmitance is ensured, it is possible to reduce the public electrode of array base palte
Parasitic capacitance between data wire, and then reduce the driving delay of data wire, increase liquid crystal drive ability.
It is preferred that the material of the organic insulator is phenylpropyl alcohol cyclobutane or allyl resin.
It is preferred that the thickness of the organic insulator is between 1.5 microns to 2.5 microns.
It is preferred that the thickness of the organic insulator is 2 microns.
It is preferred that the upper surface and/or lower surface of the organic insulator include bulge-structure 9.Thus, it is possible to improve light
Transmitance, further reduce show energy consumption.
It is preferred that the bulge-structure 9 is wavy bulge structure.
It is preferred that second passivation layer 7 is inorganic insulation layer.
It is preferred that the inorganic insulation layer is the folded of silicon nitride layer or silicon dioxide layer or silicon nitride and silica
Layer.
Fig. 2 shows that the transmitance of array base palte provided in an embodiment of the present invention and the product of prior art contrasts, and passes through
Modeling contrasts, it can be seen that array base palte provided in an embodiment of the present invention can improve the transmission of product compared with prior art
Rate.
The specific Making programme of array base palte provided in an embodiment of the present invention includes：
Layer of metal or alloy are deposited by sputtering equipment on clean underlay substrate, herein on one layer of even spread
Photoresist, after hardening to be dried, it is exposed using first mask plate, develop required pattern, is formed through wet etching
Grid line layer 1, then stripping photoresist.
Be sequentially depositing gate insulator 4 and active layer 2 on the substrate after completing above-mentioned processing step, active layer it
Upper one layer of photoresist of even spread, after hardening to be dried, is exposed using second mask plate, and develop required pattern,
Active layer 2 is formed through dry etching, then stripping photoresist.Active layer 2 includes forming the amorphous silicon layer of raceway groove and positioned at amorphous
The doped amorphous silicon layer of good ohmic contact is formed between silicon layer and data line layer.
Layer of metal is deposited by sputtering equipment on the substrate after completing above-mentioned processing step, then even spread one
Layer photoresist, after hardening to be dried, is exposed, develop required pattern, through wet etching shape using the 3rd mask plate
Into data line layer 3, then stripping photoresist.
The material of data line layer can be aluminium neodymium alloy (AlNd), aluminium (Al), copper (Cu), molybdenum (Mo), molybdenum and tungsten alloy (MoW)
Or the monofilm of chromium (Cr), or these metal materials are combined formed composite membrane.
One layer of organic insulator 5 is coated with by spin coating or knife coating on the substrate after completing above-mentioned processing step, had
Machine insulating barrier 5 is usually benzocyclobutene or propylene resin material, has the characteristics that dielectric constant is low, transmitance is high.It is to be dried
After hardening, be exposed using the 4th mask plate, develop required pattern, can obtain without etching it is required it is organic absolutely
Edge layer pattern.Organic insulator can form the bulge-structure 9 shown in Fig. 1 after treatment, to improve the transmitance of light.
Layer of transparent conductive layer is formed by sputtering equipment on the substrate after completing above-mentioned processing step, it is to be dried hard
After change, it is exposed using the 5th mask plate, develop required pattern, and pixel electrode 6 is formed through wet etching.
One layer of inorganic insulating membrane is formed by CVD equipment on the substrate after completing above-mentioned processing step, it is to be dried hard
After change, it is exposed using the 6th mask plate, develop required pattern, and the second passivation layer 7 is formed through dry etching.
Preferably, the material of the second passivation layer 7 is non-photo-sensing type resin.Compared with photosensitive type resin, non-photo-sensing type resin
Have the following advantages that：The dielectric constant of non-photo-sensing type resin material is about 3.0, less than the dielectric constant of photosensitive type resin material
(about 4.0)；The transmitance of non-photo-sensing type resin material close to 100%, far above photosensitive type resin material transmitance (about
93%)；The solidification temperature of non-photo-sensing type resin material is higher, about 400 degree, and gas effusion is almost nil, and photosensitive type tree
The solidification temperature of fat material can only easily produce gas effusion, influence to produce at 230 degree or so, in subsequent production technical process
Product quality.
Layer of transparent conductive layer is formed by sputtering equipment on the substrate after completing above-mentioned processing step, it is to be dried hard
After change, it is exposed using the 7th mask plate, develop required pattern, and public electrode 8 is formed through wet etching.
In the embodiment of the present invention, organic insulator 5 is usually that to have the characteristics that dielectric constant is low, transmitance is high organic
Film, thickness is between 1.5 to 2.5 microns, such as can be 2 microns, but is not limited to 2 microns；
Organic insulator 5 is usually the organic insulator being made up of benzocyclobutene or propylene resin material；
Organic insulator 5 can be obtained by spin-coating method or knife coating.
Inorganic insulation layer 7 can be silicon nitride or silica or the lamination of silicon nitride and silica.
A kind of display device provided in an embodiment of the present invention, including described array base palte provided in an embodiment of the present invention.
The display device can be：Liquid crystal panel, Electronic Paper, oled panel, LCD TV, liquid crystal display device, number
Code-phase frame, mobile phone, tablet personal computer etc. have the product or part of any display function.
In summary, the embodiment of the present invention is to be directed to a kind of design of novel TFT LCD device structure,
Traditional silicon nitride or silicon dioxide insulating layer organic insulator and inorganic insulation layer composite construction are substituted, and employed convex
The structure risen.This liquid crystal display structure can effectively reduce the parasitic capacitance of data wire and public electrode, and then reduce data
The driving delay of line, increases liquid crystal drive ability, while can also improve transmitance, reduces and shows energy consumption.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (8)
- A kind of 1. array base palte, it is characterised in that including：Substrate and the grid line layer being formed on the substrate, gate insulator Layer, active layer, data line layer, the first passivation layer, pixel electrode, the second passivation layer and public electrode, first passivation layer are Organic insulator；The upper surface and/or lower surface of the organic insulator include bulge-structure；The material of second passivation layer For non-photo-sensing type resin material.
- 2. array base palte according to claim 1, it is characterised in that the material of the organic insulator is phenylpropyl alcohol cyclobutane Or allyl resin.
- 3. array base palte according to claim 1, it is characterised in that the thickness of the organic insulator at 1.5 microns extremely Between 2.5 microns.
- 4. array base palte according to claim 3, it is characterised in that the thickness of the organic insulator is 2 microns.
- 5. array base palte according to claim 1, it is characterised in that the bulge-structure is wavy bulge structure.
- 6. array base palte according to claim 1, it is characterised in that second passivation layer is inorganic insulation layer.
- 7. array base palte according to claim 6, it is characterised in that the inorganic insulation layer is silicon nitride layer or dioxy The lamination of SiClx layer or silicon nitride and silica.
- 8. a kind of display device, it is characterised in that including the array base palte described in any claims of claim 1-7.
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| CN201510144038.0A CN104698630B (en) | 2015-03-30 | 2015-03-30 | Array base palte and display device |
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| CN201510144038.0A CN104698630B (en) | 2015-03-30 | 2015-03-30 | Array base palte and display device |
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| CN104698630A CN104698630A (en) | 2015-06-10 |
| CN104698630B true CN104698630B (en) | 2017-12-08 |
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| CN115755470A (en) * | 2022-11-15 | 2023-03-07 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method and display panel |
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