CN104682917A - Impedance matching network for plasma reactor - Google Patents
Impedance matching network for plasma reactor Download PDFInfo
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- CN104682917A CN104682917A CN201310613328.6A CN201310613328A CN104682917A CN 104682917 A CN104682917 A CN 104682917A CN 201310613328 A CN201310613328 A CN 201310613328A CN 104682917 A CN104682917 A CN 104682917A
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- impedance matching
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Abstract
The present invention provides an impedance matching network for a plasma reactor, which comprises at least one inductor and at least one variable capacitor unit, wherein the variable capacitor unit comprises at least one variable vacuum capacitor; the variable vacuum capacitor comprises two parallel electrode plates; an annular piezoelectric ceramic plate is arranged between the two electrode plates; the annular piezoelectric ceramic plate is connected with a driving power supply; and an arc-shaped electrode plate is arranged in the hollow region of the annular piezoelectric ceramic plate. The variable vacuum capacitor in the impedance matching network described in the present invention uses the inverse piezoelectric effect of piezoelectric ceramic material; when alternating driving voltage is applied to piezoelectric ceramics, the piezoelectric ceramics can rapidly generate telescopic motion along a voltage loading direction, so that the distance of the arc-shaped electrode plate relative to the other electrode plate is changed; accordingly, the capacitance value of the variable vacuum capacitor is rapidly changed to realize that the size of the variable vacuum capacitor can be regulated within microsecond magnitude; and the need that plasma impedance is rapidly changed with the output of a radio frequency power source is satisfied.
Description
Technical field
The present invention relates to the manufacture field of semiconductor device, particularly relate to the impedance match technique field of plasma reactor.
Background technology
Plasma processing apparatus is widely used in the manufacturing process manufacturing integrated circuit (IC) or MEMS.One of them significant purposes is exactly the plasma reactor for etching semiconductor chip.Atom containing a large amount of electronics, ion, excitation state in plasma, molecule and free radical isoreactivity particle, there is various physical and chemical reaction at surface of semiconductor chip in these active particles, thus makes surface of semiconductor chip performance obtain change.Usually, for plasma treatment module, as the mode generating plasma, can be divided into substantially and utilize corona (glow) to discharge or high-frequency discharge, and utilize the modes such as microwave.
In the plasma treatment module of high-frequency discharge mode, need to access impedance matching network between radio-frequency power supply and discharge system in order to the radio-frequency power supply power of activated plasma is effectively carried on discharge system, impedance matching network generally includes electric capacity and inductance, when the impedance of impedance matching network needs to change, usually by changing the adjustment of capacitance size realization to impedance matching network.Because technological parameter is in actual applications (as radio-frequency power, air pressure, process materials or gas) change can cause the rapid change of plasma impedance, it is particularly the application of pulse modulation output for radio frequency power source, the extensive use of pulse radiation frequency output power reactive plasma etching technics, its general principle is that radio frequency power source exports the radio-frequency power that is pulse modulation for generation of plasma, the density of the plasma produced changes with pulse generation, charged particle (electronics and ion) quantity intermittence change wherein, thus make the corrasion of plasma be controlled and cushion.In this application, in plasma applications, radio frequency power source can change the high and low frequency power be carried on discharge system within the musec order time, cause the rapid change of impedance of plasma in gsec, this just requires that impedance matching network can provide the impedance matching in the same order time to discharge with the continous-stable of maintain plasma.In traditional matching network, variable capacitance is by motor-driven, the quick adjustment of variable capacitance in musec order cannot be met, cause impedance matching network can not regulate self size in time, so that in time radio-frequency power supply power effectively can not be carried on discharge system, and then the plasma distribution needed for technique can not be produced.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of impedance matching network for plasma reactor, comprise at least one inductance and a variable-capacitance unit, described variable-capacitance unit comprises at least one variable vacuum capacitance, described variable vacuum capacitance comprises two battery lead plates, arrange a ring-shaped piezo ceramic plate between described two battery lead plates, described ring-shaped piezo ceramic plate connects a driving power, and the hollow region of described ring-shaped piezo ceramic plate arranges an arc-shaped electrode plate.
Preferably, described variable vacuum capacitance unit comprises several variable vacuum capacitances, and several variable vacuum capacitances described are in parallel or connect.
Preferably, connect a high-power MOS TFET field effect transistor unit between described variable-capacitance unit and described driving power, described high-power MOS TFET field effect transistor unit comprises several high-power MOSs TFET field effect transistor.
Preferably, the quantity of described high-power MOS TFET field effect transistor is equal with the quantity of described variable vacuum capacitance, and each high-power MOS TFET field effect transistor connects a variable vacuum capacitance.
Preferably, described high-power MOS TFET field effect transistor unit connects a micro-control unit MCU.
Preferably, the capacitance size of described variable vacuum capacitance adjusts in musec order.
Preferably, several variable vacuum capacitances described are according to the parallel connection of impedance matching demand or be connected into a circuit, and described circuit connects a driving power.
Preferably, described impedance matching network connects radio frequency source power source or RF bias power source.
Preferably, described radio frequency source power source and described RF bias power source export as pulse modulation exports.
Preferably, described ring-shaped piezo ceramic plate is connected with described driving power by a Piezoelectric Ceramic electrode.
The invention has the advantages that: the variable vacuum capacitance in impedance matching network of the present invention adopts piezoceramic material to make, utilize the inverse piezoelectric effect of piezoceramic material, when applying alternating driving voltages to piezoelectric ceramic, stretching motion is there is rapidly in piezoelectric ceramic energy along voltage-drop loading direction, and then change rapidly the capacitance of variable vacuum capacitance, usually can change in musec order.By adopting the mode of multiple variable vacuum capacitance parallel connection, utilizing high-power MOS TFET field effect transistor unit and MCU to control to realize the combination of the variable vacuum capacitance of any amount, and then realizing the flexible adjustment of matched impedance.Technical solutions according to the invention have overturned the regulative mode in the past utilizing motor-driven conventional variable vacuum capacitance, the inverse piezoelectric effect of piezoceramic material is utilized to make vacuum variable capacitor, realize vacuum variable capacitor and can realize size adjustment in musec order, meet plasma impedance and export rapidly the needs changed with radio frequency power source.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 illustrates impedance matching network of the present invention and plasma reactor syndeton schematic diagram;
Fig. 2 illustrates variable vacuum capacitance structural representation of the present invention;
Fig. 3 illustrates ring-shaped piezo ceramic plate of the present invention and arc-shaped electrode board connecting structure schematic diagram thereof;
Fig. 4 illustrates the structural representation of impedance matching network of the present invention;
Fig. 5 illustrates the structural representation that high-power MOS TFET field effect transistor is connected with variable vacuum capacitance.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
In Plasma Industry application, need to access impedance matching network between power supply and discharge system in order to the radio-frequency power supply power of activated plasma is effectively carried on discharge system.Fig. 1 illustrates impedance matching network of the present invention and plasma reactor syndeton schematic diagram.As shown in Figure 1, plasma reactor comprises vacuum reaction chamber 100, and comprise the bottom electrode 110 below top electrode 105 and top electrode 105 in described vacuum reaction chamber, pending semiconductor chip is positioned at above bottom electrode 110.When the radio-frequency power of radio frequency power source is applied on bottom electrode 110, can form plasma 120 between top electrode 105 and bottom electrode 110, plasma 120 carries out physical bombardment and chemical reaction to described surface of semiconductor chip, completes etching process.The radio frequency power source of plasma reactor generally includes at least one RF bias power source and a radio frequency source power source, in the present embodiment, is applied on bottom electrode 110 in a RF bias power source 170 and a radio frequency source power source 160 simultaneously.Radio-frequency power is effectively applied on bottom electrode 110 respectively by impedance matching network 140 and impedance matching network 150 by RF bias power source 170 and radio frequency source power source 160.
Those skilled in the art easily know, in plasma reactor, plasma 120 matches impedances produced in the impedance that the arranging of impedance matching network must ensure radio frequency power source and vacuum reaction chamber 100 is because technological parameter is in actual applications as radio-frequency power, air pressure, the change of process materials or gas can cause the rapid change of plasma impedance, particularly when radio-frequency power output exports for pulse modulation, consistent with the pulse exporting change of radio frequency power source for ensureing plasma 120 impedance variation in vacuum reaction chamber 100, impedance matching network between radio frequency power source with plasma needs to carry out the change equal with the pulse output frequencies of radio frequency power source.Usually, impedance matching network at least comprises an inductance and a variable capacitance, and in the prior art, the impedance adjustment of impedance matching network is mainly passed through to the inductance of blocked impedance matching network, the variable capacitance changing impedance matching network realizes.In plasma reactor, variable capacitance is generally variable vacuum capacitance.Traditional variable vacuum capacitance is by motor-driven, the quick change of capacitance cannot be realized, be particularly in the application of pulse output at radio frequency power source, due to radio frequency power source be pulse export time, radio frequency power source can change the high and low frequency power be carried on plasma within the musec order time, cause the rapid change of plasma impedance within the musec order time, this just requires that impedance matching network can provide the continous-stable of impedance matching one maintain plasma in the same order time to discharge.Traditional cannot meet this requirement by motor-driven variable vacuum capacitance.
Fig. 2 illustrates variable vacuum capacitance structural representation of the present invention, and described variable vacuum capacitance 1510 comprises two parallel battery lead plates 1511 and 1512, arranges a ring-shaped piezo ceramic plate 1513 almost parallel with described two battery lead plates between described two battery lead plates.Ring-shaped piezo ceramic plate 1513 connects a driving power 153 by a Piezoelectric Ceramic electrode 1515, the hollow region of ring-shaped piezo ceramic plate 1513 arranges an arc-shaped electrode plate 1514, battery lead plate 1512 and arc-shaped electrode plate 1514 form parallel-plate vacuum capacitance, and Fig. 3 illustrates described ring-shaped piezo ceramic plate and arc-shaped electrode board connecting structure schematic diagram thereof.Piezoelectric ceramic is a kind of ceramic material mechanical energy and electric energy can changed mutually, in the present invention, ring-shaped piezo ceramic plate 1513 connects an alternation driving power 153, utilize the inverse piezoelectric effect of piezoceramic material, piezoceramic material is made to produce mechanical movement under the driving of alternating electric field, namely when applying alternating electric field to ring-shaped piezo ceramic plate 1513, the shape of ring-shaped piezo ceramic plate 1513 can carry out stretching motion along voltage-drop loading direction, its stretching motion forces the arc-shaped electrode plate 1514 of its hollow region that compression or extensional motion occur, the distance d between arc-shaped electrode plate 1514 and battery lead plate 1512 is caused to change, known variable vacuum capacitance capacitance computing formula be
(ε in formula
0for permittivity of vacuum, S is polar plate area, and d is polar plate spacing), thus realize the quick change to electric capacity.Adopt technical solutions according to the invention, curvature, the Quality Design that can pass through the different arc-shaped electrode plate of selection realize the different rate of change of capacitance of variable vacuum torch and capacitance governing response time with making material etc.In the present embodiment, the driving power 153 acting on ring-shaped piezo ceramic plate 1513 is AC power.
Fig. 4 illustrates the structural representation of impedance matching network of the present invention, the present embodiment is selected to be described in detail with the impedance matching network 150 that radio frequency source power source 160 carries out mating, the impedance matching network 140 connected with RF bias power source 170 can adopt the technical scheme same with impedance matching network 150, does not repeat them here.In the schematic diagram shown in Fig. 4, radio frequency source power source 160 connects impedance matching network 150, impedance matching network 150 comprises inductance 152 and a variable vacuum capacitance unit 151, connect high-power MOS TFET field effect transistor unit 155, Micro-processor MCV 154 between variable vacuum capacitance unit 151 and driving power 153 and connect described high-power MOS TFET field effect transistor unit 155.The variable vacuum capacitance unit 151 that the present embodiment adopts comprises multiple variable vacuum capacitance 1510, ring-shaped piezo ceramic plate 1513 due to variable vacuum capacitance 1510 stretches limited extent, it drives the Tension and Compression amplitude of arc-shaped electrode plate 1514 less, distance between the battery lead plate that arc-shaped electrode plate 1514 is parallel with two changes less, finally cause variable capacitance capacitance to change less, the adjustment demand of impedance matching network can not be met.The present invention adopts the parallel connection of multiple variable vacuum capacitance 1510 or is connected into a variable vacuum capacitance unit 151, is adjusted by the equivalent capacity capacitance of change size to variable vacuum capacitance unit 151 of the quantity and each variable vacuum capacitance that arrange variable vacuum capacitance 1510.Because several variable vacuum capacitances 1510 are in parallel or be connected into a circuit, therefore same driving power 153 can be applied to this circuit.Fig. 5 illustrates the structural representation that high-power MOS TFET field effect transistor is connected with variable vacuum capacitance; In the embodiment described in Fig. 5, high-power MOS TFET field effect transistor unit 155 comprises the high-power MOS TFET field effect transistor 1551 with the corresponding number of variable vacuum capacitance 1510, and each high-power MOS TFET field effect transistor 1551 connects a variable vacuum capacitance 1510.High-power MOS TFET field effect transistor controls driving power 153 load driver voltage on the ring-shaped piezo ceramic plate of variable vacuum capacitance 1510, realize driving voltage by the break-make of high-power MOS TFET field effect transistor and whether drive variable vacuum capacitance 1510, and then determine the combination of the different variable vacuum capacitance quantity of variable vacuum capacitance unit 151 participating in impedance matching.In addition, high-power MOS TFET field effect transistor unit 155 also connects a Micro-processor MCV 154, MCU154 can be selected variable vacuum capacitance 1510 by the break-make controlling each high-power MOS TFET field effect transistor, when a certain high-power MOS TFET field effect transistor 1551 is conducting state, the variable vacuum capacitance be attached thereto can because inner piezoelectric ceramic be at driving voltage move under influence, and then changing capacitance, when a certain high-power MOS TFET field effect transistor 1551 is partition state, the variable capacitance size be attached thereto remains unchanged by the break-make adopting MCU154 to control high-power MOS TFET field effect transistor unit, and then control the combination that variable vacuum unit 151 can realize any variable vacuum capacitance quantity, and then realize adjusting flexibly the impedance of impedance matching network 150, ensure the firm power input of discharge system.
Variable vacuum capacitance in impedance matching network of the present invention adopts piezoceramic material to make, utilize the inverse piezoelectric effect of piezoceramic material, when applying alternating driving voltages to piezoelectric ceramic, stretching motion is there is rapidly in piezoelectric ceramic energy along voltage-drop loading direction, and then change rapidly the capacitance of variable vacuum capacitance, usually can change in musec order.By adopting the mode of multiple variable vacuum capacitance parallel connection, utilizing high-power MOS TFET field effect transistor unit and MCU to control to realize the combination of the variable vacuum capacitance of any amount, and then realizing the flexible adjustment of matched impedance.Technical solutions according to the invention have overturned the shaping modes in the past utilizing motor-driven conventional variable vacuum capacitance, the inverse piezoelectric effect of piezoceramic material is utilized to make vacuum variable capacitor, realize vacuum variable capacitor and can realize size adjustment in musec order, meet plasma impedance and export rapidly the needs changed with radio frequency power source.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible variation and amendment, the scope that therefore protection scope of the present invention should define with the claims in the present invention is as the criterion.
Claims (10)
1. the impedance matching network for plasma reactor, comprise at least one inductance and a variable-capacitance unit, it is characterized in that: described variable-capacitance unit comprises at least one variable vacuum capacitance, described variable vacuum capacitance comprises two battery lead plates, one ring-shaped piezo ceramic plate is set between described two battery lead plates, described ring-shaped piezo ceramic plate connects a driving power, and the hollow region of described ring-shaped piezo ceramic plate arranges an arc-shaped electrode plate.
2. impedance matching network according to claim 1, is characterized in that: described variable vacuum capacitance unit comprises several variable vacuum capacitances, and several variable vacuum capacitances described are in parallel or connect.
3. impedance matching network according to claim 2, it is characterized in that: connect a high-power MOS TFET field effect transistor unit between described variable-capacitance unit and described driving power, described high-power MOS TFET field effect transistor unit comprises several high-power MOSs TFET field effect transistor.
4. impedance matching network according to claim 3, is characterized in that: the quantity of described high-power MOS TFET field effect transistor is equal with the quantity of described variable vacuum capacitance, and each high-power MOS TFET field effect transistor connects a variable vacuum capacitance.
5. impedance matching network according to claim 3, is characterized in that: described high-power MOS TFET field effect transistor unit connects a micro-control unit MCU.
6. impedance matching network according to claim 1, is characterized in that: the capacitance size of described variable vacuum capacitance adjusts in musec order.
7. impedance matching network according to claim 2, is characterized in that: several variable vacuum capacitances described are according to the parallel connection of impedance matching demand or be connected into a circuit, and described circuit connects a driving power.
8. impedance matching network according to claim 1, is characterized in that: described impedance matching network connects radio frequency source power source or RF bias power source.
9. impedance matching network according to claim 8, is characterized in that: described radio frequency source power source and described RF bias power source export as pulse modulation exports.
10. impedance matching network according to claim 1, is characterized in that: described ring-shaped piezo ceramic plate is connected with described driving power by a Piezoelectric Ceramic electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310613328.6A CN104682917B (en) | 2013-11-27 | 2013-11-27 | Impedance matching network for plasma reactor |
| TW103140138A TWI571053B (en) | 2013-11-27 | 2014-11-19 | Impedance Matching Network for Plasma Reactors |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310613328.6A CN104682917B (en) | 2013-11-27 | 2013-11-27 | Impedance matching network for plasma reactor |
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| CN104682917A true CN104682917A (en) | 2015-06-03 |
| CN104682917B CN104682917B (en) | 2017-09-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110228787A (en) * | 2018-03-05 | 2019-09-13 | 夏普株式会社 | The control method of MEMS element and miniature object |
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|---|---|---|---|---|
| US20080232023A1 (en) * | 2007-03-22 | 2008-09-25 | James Oakes | Capacitors adapted for acoustic resonance cancellation |
| CN101989525A (en) * | 2009-08-05 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Plasma processing cavity and switchable matching network with switchable offset frequency |
| CN102054587A (en) * | 2009-10-27 | 2011-05-11 | 富士通株式会社 | Variable capacitive element, variable capacitive device, and method for driving the variable capacitive element |
| CN103311082A (en) * | 2012-03-13 | 2013-09-18 | 中微半导体设备(上海)有限公司 | Radio frequency matching network and plasma processing chamber applying same |
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2013
- 2013-11-27 CN CN201310613328.6A patent/CN104682917B/en active Active
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- 2014-11-19 TW TW103140138A patent/TWI571053B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080232023A1 (en) * | 2007-03-22 | 2008-09-25 | James Oakes | Capacitors adapted for acoustic resonance cancellation |
| CN101989525A (en) * | 2009-08-05 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Plasma processing cavity and switchable matching network with switchable offset frequency |
| CN102054587A (en) * | 2009-10-27 | 2011-05-11 | 富士通株式会社 | Variable capacitive element, variable capacitive device, and method for driving the variable capacitive element |
| CN103311082A (en) * | 2012-03-13 | 2013-09-18 | 中微半导体设备(上海)有限公司 | Radio frequency matching network and plasma processing chamber applying same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110228787A (en) * | 2018-03-05 | 2019-09-13 | 夏普株式会社 | The control method of MEMS element and miniature object |
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| Publication number | Publication date |
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| TW201526536A (en) | 2015-07-01 |
| TWI571053B (en) | 2017-02-11 |
| CN104682917B (en) | 2017-09-26 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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