CN104681647A - 一种降低太阳能电池表面反射率的结构 - Google Patents
一种降低太阳能电池表面反射率的结构 Download PDFInfo
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- CN104681647A CN104681647A CN201510054295.5A CN201510054295A CN104681647A CN 104681647 A CN104681647 A CN 104681647A CN 201510054295 A CN201510054295 A CN 201510054295A CN 104681647 A CN104681647 A CN 104681647A
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- 238000002310 reflectometry Methods 0.000 title claims abstract description 50
- 210000004027 cell Anatomy 0.000 title claims abstract description 37
- 239000002110 nanocone Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 230000035772 mutation Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000008859 change Effects 0.000 description 11
- 239000002131 composite material Substances 0.000 description 8
- 238000010276 construction Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical group 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201510054295.5A CN104681647B (zh) | 2015-02-02 | 2015-02-02 | 一种降低太阳能电池表面反射率的结构 |
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CN201510054295.5A CN104681647B (zh) | 2015-02-02 | 2015-02-02 | 一种降低太阳能电池表面反射率的结构 |
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CN104681647A true CN104681647A (zh) | 2015-06-03 |
CN104681647B CN104681647B (zh) | 2017-01-11 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109524489A (zh) * | 2019-01-08 | 2019-03-26 | 中国计量大学 | 一种具有宽波段抗反射能力的硅纳米柱阵列结构 |
CN110767762A (zh) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池前板膜及其制作方法、太阳能电池 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315290B (zh) * | 2011-09-23 | 2013-01-30 | 中国科学院光电技术研究所 | 一种全光谱吸收增强的氢化非晶硅薄膜太阳能电池 |
CN104064625A (zh) * | 2014-06-17 | 2014-09-24 | 复旦大学 | 一种基于硅纳米锥晶体的全太阳光谱响应的太阳电池制备方法 |
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2015
- 2015-02-02 CN CN201510054295.5A patent/CN104681647B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102315290B (zh) * | 2011-09-23 | 2013-01-30 | 中国科学院光电技术研究所 | 一种全光谱吸收增强的氢化非晶硅薄膜太阳能电池 |
CN104064625A (zh) * | 2014-06-17 | 2014-09-24 | 复旦大学 | 一种基于硅纳米锥晶体的全太阳光谱响应的太阳电池制备方法 |
Non-Patent Citations (2)
Title |
---|
刘宇: "《南京大学研究生毕业论文》", 12 August 2011 * |
阮召崧: "《上海交通大学硕士学位论文》", 12 April 2011 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110767762A (zh) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池前板膜及其制作方法、太阳能电池 |
CN109524489A (zh) * | 2019-01-08 | 2019-03-26 | 中国计量大学 | 一种具有宽波段抗反射能力的硅纳米柱阵列结构 |
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Effective date of registration: 20201120 Address after: Room 1424, Floor 4, Peony Pioneer Building, No. 2 Garden Road, Haidian District, Beijing, 100191 Patentee after: Beijing Zhonglian Technology Service Co.,Ltd. Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: JIANGSU University |
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Effective date of registration: 20201209 Address after: 222000 Gaogong Island, Lianyungang City, Jiangsu Province Patentee after: LIANYUNGANG GAOGONGDAO ENTERPRISE Corp. Address before: Room 1424, Floor 4, Peony Pioneer Building, No. 2 Garden Road, Haidian District, Beijing, 100191 Patentee before: Beijing Zhonglian Technology Service Co.,Ltd. |
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