CN104659161B - LED chip and forming method thereof - Google Patents
LED chip and forming method thereof Download PDFInfo
- Publication number
- CN104659161B CN104659161B CN201310594912.1A CN201310594912A CN104659161B CN 104659161 B CN104659161 B CN 104659161B CN 201310594912 A CN201310594912 A CN 201310594912A CN 104659161 B CN104659161 B CN 104659161B
- Authority
- CN
- China
- Prior art keywords
- transition zone
- light extraction
- led chip
- type semiconductor
- doping type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000007704 transition Effects 0.000 claims abstract description 66
- 238000000605 extraction Methods 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000009792 diffusion process Methods 0.000 claims abstract description 49
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 24
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical group [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000395 magnesium oxide Substances 0.000 claims description 11
- 238000013517 stratification Methods 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims 2
- 230000008901 benefit Effects 0.000 abstract description 10
- 230000000630 rising effect Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000006854 communication Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310594912.1A CN104659161B (en) | 2013-11-21 | 2013-11-21 | LED chip and forming method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310594912.1A CN104659161B (en) | 2013-11-21 | 2013-11-21 | LED chip and forming method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104659161A CN104659161A (en) | 2015-05-27 |
CN104659161B true CN104659161B (en) | 2017-10-31 |
Family
ID=53250068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310594912.1A Active CN104659161B (en) | 2013-11-21 | 2013-11-21 | LED chip and forming method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104659161B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108346728A (en) * | 2017-12-30 | 2018-07-31 | 河源市众拓光电科技有限公司 | A kind of light emitting diode (LED) chip with vertical structure of highlight extract efficiency and preparation method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1836339A (en) * | 2002-08-30 | 2006-09-20 | 吉尔科有限公司 | Light emitting diode with improved effience |
EP2397909A1 (en) * | 2010-05-18 | 2011-12-21 | Canon Kabushiki Kaisha | Electrophotographic apparatus and electrophotographic photosensitive member |
CN202888222U (en) * | 2012-08-03 | 2013-04-17 | 光达光电设备科技(嘉兴)有限公司 | LED expitaxial structure |
-
2013
- 2013-11-21 CN CN201310594912.1A patent/CN104659161B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1836339A (en) * | 2002-08-30 | 2006-09-20 | 吉尔科有限公司 | Light emitting diode with improved effience |
EP2397909A1 (en) * | 2010-05-18 | 2011-12-21 | Canon Kabushiki Kaisha | Electrophotographic apparatus and electrophotographic photosensitive member |
CN202888222U (en) * | 2012-08-03 | 2013-04-17 | 光达光电设备科技(嘉兴)有限公司 | LED expitaxial structure |
Also Published As
Publication number | Publication date |
---|---|
CN104659161A (en) | 2015-05-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
EXSB | Decision made by sipo to initiate substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191230 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder |