CN104659161B - LED chip and forming method thereof - Google Patents
LED chip and forming method thereof Download PDFInfo
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- CN104659161B CN104659161B CN201310594912.1A CN201310594912A CN104659161B CN 104659161 B CN104659161 B CN 104659161B CN 201310594912 A CN201310594912 A CN 201310594912A CN 104659161 B CN104659161 B CN 104659161B
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000007704 transition Effects 0.000 claims abstract description 66
- 238000000605 extraction Methods 0.000 claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000009792 diffusion process Methods 0.000 claims abstract description 49
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 24
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical group [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000395 magnesium oxide Substances 0.000 claims description 11
- 238000013517 stratification Methods 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims 2
- 230000008901 benefit Effects 0.000 abstract description 10
- 230000000630 rising effect Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
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- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
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- 238000003466 welding Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000006854 communication Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED chip and forming method thereof.Wherein the LED chip includes：Substrate；First doping type semiconductor layer, the first doping type semiconductor layer is located on substrate；First electrode, first electrode is contacted with the first doping type semiconductor layer；MQW, MQW is located on the first doping type semiconductor layer；Second doping type semiconductor layer, the second doping type semiconductor layer is located on MQW；Current-diffusion layer, current-diffusion layer is located on the second doping type semiconductor layer；Second electrode, second electrode is located on the first area of current-diffusion layer；Light extraction transition zone, light extraction transition zone is located on the second area of current-diffusion layer；And passivation layer, passivation layer be located at light extraction transition zone on, wherein, the index matching of current-diffusion layer, light extraction transition zone and passivation layer.The LED chip of the present invention has the advantages that rising angle is big.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of LED chip and forming method thereof.
Background technology
Because LED has the advantages that environmental protection, energy-conservation, long lifespan, what is obtained is widely applied.Fig. 1 is of the prior art
The structural representation of horizontal structure LED chip includes the substrate 100 ', the first doping type semiconductor layer 200 ', amount stacked gradually
Sub- trap 400 ', the second doping type semiconductor layer 500 ', current-diffusion layer 600 ', and first electrode 300 ', second electrode
700 ' and the passivation layer 900 ' that is covered at the top of LED chip.Usual current-diffusion layer 600 ' uses ITO materials, and refractive index is
2.0；Passivation layer 900 ' uses SiO2Material, refractive index 1.46.Because the two refractive index is larger, light is caused to be sent out in exiting surface
Raw total reflection, the angle of total reflection is 48 °, and the rising angle of LED chip is only 96 °.The luminosity of LED chip is low.
The content of the invention
It is contemplated that at least solving the small technical problem of above-mentioned rising angle to a certain extent.Therefore, the present invention
One purpose is the LED chip for proposing that a kind of rising angle is big.It is another object of the present invention to propose a kind of beam angle
The forming method of the big LED chip of degree.
LED chip according to embodiments of the present invention, can include following part：Substrate；First doping type semiconductor layer,
The first doping type semiconductor layer is located on the substrate；First electrode, the first electrode and the described first doping class
Type semiconductor layer is contacted；MQW, the MQW is located on the first doping type semiconductor layer；Second doping class
Type semiconductor layer, the second doping type semiconductor layer is located on the MQW；Current-diffusion layer, the current spread
Layer is located on the second doping type semiconductor layer；Second electrode, the second electrode is located at the of the current-diffusion layer
On one region；Light extraction transition zone, the light extraction transition zone is located on the second area of the current-diffusion layer；And passivation layer,
The passivation layer is located on the light extraction transition zone, wherein, the refractive index of the current-diffusion layer, light extraction transition zone and passivation layer
Matching.
LED chip according to the above embodiment of the present invention, at least has the following advantages that：（1）Light is penetrated at the top of LED chip
When going out, current-diffusion layer-light extraction transition zone-passivation layer is sequentially passed through, and the index matching of these three, so as to preferably
Outgoing, broadening rising angle, improves luminosity.（2）It is simple in construction, it is adapted to produce in enormous quantities.
In addition, LED chip according to embodiments of the present invention can also have following additional technical feature：
In one embodiment of the invention, the LED chip is vertical stratification.
In one embodiment of the invention, the refractive index of the light extraction transition zone is equal to the refraction of the current-diffusion layer
The geometrical mean of rate and the refractive index of the passivation layer.
In one embodiment of the invention, the light transmittance of the light extraction transition zone is more than 90%.
In one embodiment of the invention, the light extraction transition zone is magnesia film, nano titania/organic multiple
Close film or mix the Yttrium oxide thin film of tin.
In one embodiment of the invention, the light extraction transition zone is insulation film.
In one embodiment of the invention, in addition to：Back of the body coating positioned at the substrate bottom.
The forming method of LED chip according to embodiments of the present invention, may comprise steps of：Substrate is provided；Described
The first doping type semiconductor layer is formed on substrate；MQW is formed on the first doping type semiconductor layer；Institute
State and the second doping type semiconductor layer is formed on MQW；Current spread is formed on the second doping type semiconductor layer
Layer；Second electrode is formed on the first area of the current-diffusion layer；Formed on the second area of the current-diffusion layer
Light extraction transition zone；Passivation layer is formed on the light extraction transition zone；And form first electrode, the first electrode and described the
One doping type semiconductor layer is contacted, wherein, the index matching of the current-diffusion layer, light extraction transition zone and passivation layer.
The forming method of LED chip according to the above embodiment of the present invention, at least has the following advantages that：（1）Light is from LED
When projecting at the top of chip, current-diffusion layer-light extraction transition zone-passivation layer is sequentially passed through, and the index matching of these three, so that
Can preferably outgoing, broadening rising angle improves luminosity.（2）Technique is simple, is adapted to produce in enormous quantities.
In addition, the forming method of LED chip according to embodiments of the present invention can also have following additional technical feature：
In one embodiment of the invention, the LED chip is vertical stratification.
In one embodiment of the invention, the refractive index of the light extraction transition zone is equal to the current-diffusion layer and described
The refractive index geometrical mean of passivation layer.
In one embodiment of the invention, the light transmittance of the light extraction transition zone is more than 90%.
In one embodiment of the invention, the light extraction transition zone is magnesia film, nano titania/organic multiple
Close film or mix the Yttrium oxide thin film of tin.
In one embodiment of the invention, the light extraction transition zone is insulation film.
In one embodiment of the invention, in addition to：Back of the body coating is formed in the substrate bottom.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that, wherein：
Fig. 1 is the structural representation of the LED chip of conventional flat structure；
Fig. 2 is the structural representation of the LED chip of first embodiment of the invention；
Fig. 3 is LED chip and the light extraction schematic diagram of LED chip of the embodiment of the present invention without light extraction transition zone；
Fig. 4 is the structural representation of the LED chip of second embodiment of the invention；
Fig. 5 is the flow chart of the forming method of the LED chip of the embodiment of the present invention；With
Fig. 6 a to Fig. 6 g are the detailed process schematic diagrames of the forming method of the LED chip of the embodiment of the present invention.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and be not considered as limiting the invention.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise " are, based on orientation shown in the drawings or position relationship, to be for only for ease of
The description present invention and simplified description, rather than indicate or imply that the device or element of meaning must have specific orientation, Yi Te
Fixed azimuth configuration and operation, therefore be not considered as limiting the invention.In addition, term " first ", " second " are only used for
Purpose is described, and it is not intended that indicating or implying relative importance or the implicit quantity for indicating indicated technical characteristic.
Thus, " first " is defined, one or more this feature can be expressed or be implicitly included to the feature of " second ".At this
In the description of invention, " multiple " are meant that two or more, unless otherwise specifically defined.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；It can be machine
Tool is connected or electrically connected；Can be joined directly together, can also be indirectly connected to by intermediary, can be two members
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
LED chip of the present invention and forming method thereof is discussed in detail with reference to Figure of description.
Fig. 2 is the structural representation of the LED chip of first embodiment of the invention.As shown in Fig. 2 the LED chip can be wrapped
Include following part：Substrate 100, the first doping type semiconductor layer 200, first electrode 300, the doping class of MQW 400, second
Type semiconductor layer 500, current-diffusion layer 600, second electrode 700, light extraction transition zone 800 and passivation layer 900.First doping type
Semiconductor layer 200 is located on substrate 100.First electrode 300 is contacted with the first doping type semiconductor layer 200.MQW 400
On the first doping type semiconductor layer 300.Second doping type semiconductor layer 500 is located on MQW 400.Electric current expands
Layer 600 is dissipated to be located on the second doping type semiconductor layer 500.Second electrode 700 is located at the first area of current-diffusion layer 600
On.Light extraction transition zone 800 is located on the second area of current-diffusion layer 600.Passivation layer 900 is located on light extraction transition zone 800.Its
In, the index matching of current-diffusion layer 600, light extraction transition zone 800 and passivation layer 900.
Although it should be noted that the LED chip shown in Fig. 2 is vertical stratification, can also be in other embodiments
Horizontal structure.And, it is necessary to explanation, substrate 100, the first doping type semiconductor layer 200, first electrode 300, Multiple-quantum
Trap 400, the second doping type semiconductor layer 500, current-diffusion layer 600, second electrode 700, light extraction transition zone 800 and passivation layer
900 material and thickness, can flexibly be selected, the technology belongs to those skilled in the art according to the performance of target LED chip
It is known, do not repeat herein.
According to the LED chip of this embodiment of the invention, at least have the following advantages that：（1）Light is projected at the top of LED chip
When, sequentially pass through current-diffusion layer-light extraction transition zone-passivation layer, and the index matching of these three, so as to preferably go out
Penetrate, broadening rising angle improves luminosity.（2）It is simple in construction, it is adapted to produce in enormous quantities.
In one embodiment of the invention, LED chip is vertical stratification.The N poles of the LED chip of vertical stratification are from substrate
Bottom is drawn, and is not take up top device exiting surface area, is conducive to improving luminosity.
In one embodiment of the invention, the refractive index of light extraction transition zone 800 is equal or approximately equal to current-diffusion layer
The geometrical mean of 600 refractive index and the refractive index of passivation layer 900.For example, refractive index is when current-diffusion layer 600 is ITO
N1=2.0, passivation layer 900 is SiO2When refractive index n2=1.46, the refractive index of light extraction transition zone 800 should beThe angle of total reflection at interface and go out when meeting the condition, between current-diffusion layer 600 and light extraction transition zone 800
The angle of total reflection at interface is between light transition layer 800 and passivation layer 900Such as
Rising angle increases after increasing light extraction transition zone shown in Fig. 3, in LED chip.
In one embodiment of the invention, the light transmittance of light extraction transition zone 800 is more than 90%.The printing opacity of light extraction transition zone 800
Rate is higher, and light is absorbed fewer in communication process, and the luminosity of LED chip is higher.
In one embodiment of the invention, light extraction transition zone 800 is magnesia film, nano titania/organic multiple
Close film or mix the Yttrium oxide thin film of tin.This different materials is compared with the requirement for meeting above-mentioned refractive index and light transmittance.It is preferred to use
Magnesia film, magnesia film has the advantages that to be easy to evaporation.
In one embodiment of the invention, light extraction transition zone 800 is insulation film.Light extraction transition zone 800 is insulation material
During material, can jointly it play a part of LED chip and external environment electric insulation with passivation layer 900.
Fig. 4 is the structural representation of the LED chip of second embodiment of the invention.As shown in figure 4, the LED chip includes：Lining
Bottom 100, cushion 110, the first doping type semiconductor layer 200, first electrode 300, MQW 400, electronic barrier layer
410th, the second doping type semiconductor layer 500, current-diffusion layer 600, current barrier layer 610, second electrode 700, go out light transition
Layer 800, passivation layer 900 and back of the body coating 1000.Wherein back of the body coating 1000 is located at the bottom of substrate 100.It should be noted that buffering
Layer 110, electronic barrier layer 410, current barrier layer 610 for it is independent it is optional and nonessential have, its material and thickness can
Flexibly selected with the performance according to target LED chip, the technology belongs to the known of those skilled in the art, does not repeat herein.
The material of back of the body coating 1000 has high reflectance, will can be projected after the downward light-emitting line reflection in direction at the top of LED chip,
Be conducive to further improving the luminosity of LED chip, be conducive to being total in follow-up encapsulation step while carrying on the back coating 1000
Crystalline substance welding.
As shown in figure 5, the forming method of LED chip according to embodiments of the present invention, may comprise steps of：
S1., substrate is provided；
S2. the first doping type semiconductor layer is formed on substrate；
S3. MQW is formed on the first doping type semiconductor layer；
S4. the second doping type semiconductor layer is formed on MQW；
S5. current-diffusion layer is formed on the second doping type semiconductor layer；
S6. second electrode is formed on the first area of current-diffusion layer；
S7. light extraction transition zone is formed on the second area of current-diffusion layer；
S8. passivation layer is formed on light extraction transition zone；And
S9. first electrode is formed, first electrode is contacted with the first doping type semiconductor layer,
Wherein, the index matching of current-diffusion layer, light extraction transition zone and passivation layer.
It should be noted that substrate, the first doping type semiconductor layer, first electrode, MQW, the second doping type
The material and thickness of semiconductor layer, current-diffusion layer, second electrode, light extraction transition zone and passivation layer, can be according to target LED core
The performance of piece and flexibly select, the technology belongs to the known of those skilled in the art, does not repeat herein.And, it is necessary to explanation
It is that step S7 and step S8 can be performed successively or first afterwards as needed, and step S9 execution sequence can be adjusted flexibly
It is whole, do not change the essence of the present invention.
The forming method of LED chip according to the above embodiment of the present invention, at least has the following advantages that：（1）Light is from LED
When projecting at the top of chip, current-diffusion layer-light extraction transition zone-passivation layer is sequentially passed through, and the index matching of these three, so that
Can preferably outgoing, broadening rising angle improves luminosity.（2）Technique is simple, is adapted to produce in enormous quantities.
In one embodiment of the invention, LED chip is vertical stratification.The N poles of the LED chip of vertical stratification are from substrate
Bottom is drawn, and is not take up top device exiting surface area, is conducive to improving luminosity.
In one embodiment of the invention, the refractive index of light extraction transition zone is equal or approximately equal to the folding of current-diffusion layer
Penetrate the geometrical mean of rate and the refractive index of passivation layer.
In one embodiment of the invention, the light transmittance of light extraction transition zone is more than 90%.Light extraction transition zone light transmittance is got over
Height, light is absorbed fewer in communication process, and the luminosity of LED chip is higher.
In one embodiment of the invention, light extraction transition zone is that magnesia film, nano titania/organic composite are thin
Film or the Yttrium oxide thin film for mixing tin.This different materials is compared with the requirement for meeting above-mentioned refractive index and light transmittance.It is preferred to use oxidation
Magnesium film, magnesia film has the advantages that to be easy to evaporation.
In one embodiment of the invention, light extraction transition zone is insulation film.When light extraction transition zone is insulating materials, energy
Enough and passivation layer plays a part of LED chip and external environment electric insulation jointly.
In one embodiment of the invention, in addition to step S10：Back of the body coating is formed in substrate bottom.Carry on the back coating 1000
Material there is high reflectance, can will project at the top of the LED chip, be conducive into one after the downward light-emitting line reflection in direction
Step improves the luminosity of LED chip, while being conducive to carrying out eutectic welding in follow-up encapsulation step.
To make those skilled in the art more fully understand the present invention, a GaN is discussed in detail with reference to Fig. 6 a to Fig. 6 g
The forming process of base LED chip.
A. MOCVD is passed through（Metallo-organic compound chemical gaseous phase deposition）Technique deposits conventional in Sapphire Substrate 100
Structure epitaxial layers：It is followed successively by nitride buffer layer 110, n-GaN layers 200, MQW 400, electronic barrier layer 410 and p-
GaN layer.Then evaporation is passed through（Or sputter coating）Mode ITO be deposited on p-GaN layer 500 obtain current-diffusion layer
600.Concrete technology is：300 DEG C or so of evaporation process temperature is controlled, 9~12sccm oxygen is passed through, final deposit thickness is
240~290nm；Hereafter in the N by 490~540 DEG C2The lower annealing of protection 30 minutes, obtains sheet resistance for 15~30 ohm, penetrates
The current-diffusion layer 600 of the electrically conducting transparent of rate more than 90%.As shown in Figure 6 a.
B. photoetching is carried out using positive photoresist under gold-tinted environment, photoresist overlay area is the estimated position for making P electrode, and
And the circular diameter of photoresist overlay area is slightly larger than electrode diameter.The good wafer of photoetching is put into evaporator and carries out MgO film
Evaporation, thickness is 50-100nm, that is, forms light extraction transition zone 800.The stripping of photoresist is carried out after the completion of evaporation again, is gone
Glue.As shown in Figure 6 b.
C. by gold-tinted processing procedure, photoetching is carried out using negtive photoresist, P electrode position is exposed（Do not plate at the top of current-diffusion layer 600
There is MgO position）, P electrode 700 is deposited by the way of evaporation.The material of P electrode 700 can be by be deposited successively Cr,
What Ti, Au were obtained, corresponding thickness of electrode recommendation is followed successively by 50nm, 25nm, 1500nm.Photoresist is carried out after the completion of deposition
Peel off, remove photoresist.Finally again in the N that temperature is 350 DEG C2Protection is lower to carry out annealing 16 minutes.As fig. 6 c.
D. wafer is put into PECVD（Plasma enhanced chemical vapor deposition）One layer of SiO of middle deposition2, thickness be 70~
80nm.After the completion of deposition, positive photoresist gold-tinted photoetching, and one layer of HMDS of coating under positive photoresist are carried out again（Hmds）Thickening
Agent, exposes electrode position, and exposed area is slightly less than electrode area, uses BOE（HF/NH4F buffers etching liquid）Etch exposed region
Removed photoresist after 10 minutes, that is, form passivation layer 900.As shown in fig 6d.
E. by grinding and polishing, wafer is thinned to required thickness, the positive negative error of thickness after wafer is thinned is not
More than 3um.By means of photolithography combination ICP (inductively coupled plasma etching) means come etching groove, the groove is served as a contrast from sapphire
The bottom of bottom 100 is through among the N-GaN layers 200 in epitaxial layer.As shown in fig 6e.
F. a negtive photoresist gold-tinted photoetching is carried out again, negative regions are exposed, and uses evaporation coating method to carry out plated film to form N electricity
Pole 300.N electrode 300 can be obtained by the way that Ti, Al, Ti, Au are deposited successively.As shown in Figure 6 f.
G. the bottom of Sapphire Substrate 100 carries out positive photoresist photoetching, covers N electrode 300, reflective in the back of the body plating of non-N electrode region
Material, that is, obtain carrying on the back coating 1000.Back of the body coating can be obtained by the way that Ti, Al, Ti, Au are deposited successively, reflective and common to make
Crystalline substance welding is used.As shown in figure 6g.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means to combine specific features, structure, material or the spy that the embodiment or example are described
Point is contained at least one embodiment of the present invention or example.Moreover, specific features, structure, material or the feature of description
Can in an appropriate manner it be combined in any one or more embodiments or example.Although having been shown and described above
Embodiments of the invention, but above-described embodiment is not considered as limiting the invention, and one of ordinary skill in the art is not
Above-described embodiment can be changed, changed within the scope of the invention in the case of the principle and objective that depart from the present invention,
Replace and modification.
Claims (10)
1. a kind of LED chip, it is characterised in that including：
Substrate；
First doping type semiconductor layer, the first doping type semiconductor layer is located on the substrate；
First electrode, the first electrode is contacted with the first doping type semiconductor layer；
MQW, the MQW is located on the first doping type semiconductor layer；
Second doping type semiconductor layer, the second doping type semiconductor layer is located on the MQW；
Current-diffusion layer, the current-diffusion layer is located on the second doping type semiconductor layer；
Second electrode, the second electrode is located on the first area of the current-diffusion layer；
Light extraction transition zone, the light extraction transition zone is located on the second area of the current-diffusion layer, and the light extraction transition zone is
Insulation film, the light extraction transition zone is magnesia film, nano titania/organic compound film or the yittrium oxide for mixing tin
Film；And
Passivation layer, the passivation layer is located on the light extraction transition zone,
Wherein, the index matching of the current-diffusion layer, light extraction transition zone and passivation layer.
2. LED chip as claimed in claim 1, it is characterised in that the LED chip is vertical stratification.
3. LED chip as claimed in claim 1, it is characterised in that the refractive index of the light extraction transition zone is equal to the electric current
The geometrical mean of the refractive index of diffusion layer and the refractive index of the passivation layer.
4. LED chip as claimed in claim 1, it is characterised in that the light transmittance of the light extraction transition zone is more than 90%.
5. LED chip as claimed in claim 1, it is characterised in that also include：Back of the body coating positioned at the substrate bottom.
6. a kind of forming method of LED chip, it is characterised in that comprise the following steps：
Substrate is provided；
The first doping type semiconductor layer is formed over the substrate；
MQW is formed on the first doping type semiconductor layer；
The second doping type semiconductor layer is formed on the MQW；
Current-diffusion layer is formed on the second doping type semiconductor layer；
Second electrode is formed on the first area of the current-diffusion layer；
Light extraction transition zone is formed on the second area of the current-diffusion layer, the light extraction transition zone is insulation film, described
Light extraction transition zone is magnesia film, nano titania/organic compound film or the Yttrium oxide thin film for mixing tin.；
Passivation layer is formed on the light extraction transition zone；And
First electrode is formed, the first electrode is contacted with the first doping type semiconductor layer,
Wherein, the index matching of the current-diffusion layer, light extraction transition zone and passivation layer.
7. the forming method of LED chip as claimed in claim 6, it is characterised in that the LED chip is vertical stratification.
8. the forming method of LED chip as claimed in claim 6, it is characterised in that refractive index of the light extraction transition zone etc.
In the refractive index geometrical mean of the current-diffusion layer and the passivation layer.
9. the forming method of LED chip as claimed in claim 6, it is characterised in that the light transmittance of the light extraction transition zone is big
In 90%.
10. the forming method of LED chip as claimed in claim 8, it is characterised in that also include：In substrate bottom shape
Into back of the body coating.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1836339A (en) * | 2002-08-30 | 2006-09-20 | 吉尔科有限公司 | Light emitting diode with improved effience |
| EP2397909A1 (en) * | 2010-05-18 | 2011-12-21 | Canon Kabushiki Kaisha | Electrophotographic apparatus and electrophotographic photosensitive member |
| CN202888222U (en) * | 2012-08-03 | 2013-04-17 | 光达光电设备科技（嘉兴）有限公司 | LED expitaxial structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1836339A (en) * | 2002-08-30 | 2006-09-20 | 吉尔科有限公司 | Light emitting diode with improved effience |
| EP2397909A1 (en) * | 2010-05-18 | 2011-12-21 | Canon Kabushiki Kaisha | Electrophotographic apparatus and electrophotographic photosensitive member |
| CN202888222U (en) * | 2012-08-03 | 2013-04-17 | 光达光电设备科技（嘉兴）有限公司 | LED expitaxial structure |
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