CN104658829B - AlN thin film type cold cathode adopting stair-shaped component gradient - Google Patents

AlN thin film type cold cathode adopting stair-shaped component gradient Download PDF

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Publication number
CN104658829B
CN104658829B CN201510094612.6A CN201510094612A CN104658829B CN 104658829 B CN104658829 B CN 104658829B CN 201510094612 A CN201510094612 A CN 201510094612A CN 104658829 B CN104658829 B CN 104658829B
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film type
type cold
aln film
cold cathodes
shaped
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CN104658829A (en
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陈平
赵德刚
朱建军
刘宗顺
江德生
杨辉
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/3048—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30488—Nitrides

Abstract

An AlN thin film type cold cathode adopting stair-shaped component gradient comprises an n-shaped SiC substrate, an n-shaped metal electrode produced on the lower surface of the n-shaped SiC substrate, an AlN thin film type cold cathode epitaxially grown on the n-shaped SiC substrate, a metal anode located on the AlN thin film type cold cathode and not contacted with the AlN thin film type cold cathode, a high-voltage source whose positive pole is connected with the metal anode as well as a galvanometer, wherein the positive pole of the galvanometer is connected with the high-voltage source, and a negative pole is connected with the n-shaped metal electrode. Electrons are emitted into vacuum by means of the advantage of negative electron affinity.

Description

The AlN film type cold cathodes of stepped content gradually variational
Technical field
The present invention relates to a kind of AlN film type cold cathodes of stepped content gradually variational, belong to the field in vacuum electronics technology Emission electronic device field.
Background technology
AlN thin film is a kind of field-transmitting cathode of excellent performance (i.e. cold cathode) material, and its band gap is up to 6.2eV, this Body has negative electron affinity, it means that the position at AlN conduction bands bottom is higher than vacuum level, as long as electronics can be from AlN Material internal moves to surface, you can be transmitted in vacuum, forces down surface potential barrier to help without the need for additionally applying a high field intensity Help electronics to cross potential barrier to be transmitted in vacuum, therefore, AlN has very big application potential in Flied emission field.
As wide bandgap semiconductor materials, in terms of AlN transmittings on the scene, also there is weak point.The AlN materials electric conductivity of itself It is very poor, it is necessary to part improvement is obtained by the doping of high concentration；And lack homo-substrate, lattice mismatch and heat can only be taken The larger foreign substrate of mismatch carries out epitaxial growth.At present, being usually used in the epitaxially grown foreign substrates of AlN includes sapphire, carbon SiClx and silicon substrate.Comparatively speaking, N-shaped SiC substrate is served as a contrast better than sapphire in terms of electric conductivity, lattice mismatch and thermal mismatching Bottom, is substantially better than n-type silicon substrate in terms of disruptive field intensity again, therefore, the relative lining for being more suitable for AlN cold cathode film preparations Bottom.
When in N-shaped SiC substrate Epitaxial growth AlN film type cold cathodes, as the 6H-SiC band gap commonly used is 3.1eV, and the band gap of AlN is 6.2eV, both differences are larger, therefore work as electronics from N-shaped SiC substrate to AlN apparent motions When, needing to overcome higher barrier present on SiC and AlN interfaces, this causes inhibition to electron motion, is unfavorable for AlN The raising of cold-cathode field emissivities.
The content of the invention
It is an object of the present invention to provide a kind of AlN film type cold cathodes of stepped content gradually variational, using negatron parent With the advantage of gesture, emit electrons in vacuum.
In order to overcome the shortcomings of background technology, the present invention provides a kind of AlN film type cold cathodes of stepped content gradually variational, Including：
One N-shaped SiC substrate；
One N-shaped metal electrode, which is produced on N-shaped SiC substrate lower surface；
One AlN film type cold cathodes, its epitaxial growth is in N-shaped SiC substrate；
One metal anode, which is located above AlN film type cold cathodes, and is not contacted with AlN film type cold cathodes；
One high-voltage power supply, its positive pole connect metal anode；
One galvanometer, its positive pole connect high-voltage power supply, and negative pole is connected with N-shaped metal electrode.
Due to the utilization of above-mentioned technology, compared with existing device architecture, the beneficial effects of the present invention is：Using multilamellar group After dividing the AlGaN layer of stepped gradual change to replace monolayer AlN thin film, as Al components are from N-shaped SiC substrate to AlN surfaces Direction increase successively, therefore with N-shaped SiC substrate constitute heterogeneous interface be low Al components AlGaN, band gap is relatively low, with SiC Between difference in band gap it is less so that electronics easily crosses the potential barrier at heterogeneous interface；Hereafter constitute the adjacent of each homogeneity interface Two-layer AlGaN, component are raised successively, and the potential barrier between two-layer AlGaN is relatively small so that electronics also easily crosses each homogeneity The potential barrier at interface, finally moves to AlN surfaces, and the advantage using negative electron affinity (NEA) is transmitted in vacuum.
Description of the drawings
In order that the object, technical solutions and advantages of the present invention become more apparent, referring to the drawings, and enforcement is combined Example, the present invention is described in further detail, wherein：
Fig. 1 is a kind of structural representation of the AlN film type cold cathodes of stepped content gradually variational.
Fig. 2 is the multilayer Al GaN film structural representation of stepped content gradually variational in N-shaped SiC substrate.
Fig. 3 is the band structure schematic diagram of the AlN thin film of stepped content gradually variational in N-shaped SiC substrate.
Specific embodiment
Refer to shown in Fig. 1, the present invention provides a kind of AlN film type cold cathodes of stepped content gradually variational, including：
One N-shaped SiC substrate 11, the resistivity of the N-shaped SiC substrate 11 is 0.020.2 Ω cm, and thickness is 200-500 μ m；
One N-shaped metal electrode 10, which is produced on 11 lower surface of N-shaped SiC substrate, and the material of the N-shaped metal electrode 10 is Ni or Ni/Au, the Ni thickness degree in the Ni or Ni/Au are 50-200nm, and Au thickness degree is 50-200nm；Ni or Ni/Au are thin The annealed formation Ohmic contact of film, annealing atmosphere are nitrogen or argon, and annealing temperature is 950 DEG C, and annealing time is 1-5min；
One AlN film types cold cathode 12, in N-shaped SiC substrate 11, the AlN film cold cathodes 12 are for its epitaxial growth Thickness be 10-500nm, Si doping contents are 1 × 1018-1 × 1020cm-3, and the AlN film types cold cathode 12 is positioned over Measure in vacuum system, vacuum is 1 × 10-1-1 × 10-8Pa, and the AlN film cold cathodes 12 are by multilamellar with not Constitute with the AlGaN of Al components, the number of plies >=2 of AlGaN start to be followed successively by Al from N-shaped SiC substrate 11xGa1-xN、AlyGa1-yN、 AlzGa1-zN, the Al components of each layer are raised successively, meet 0≤x ＜ y ＜ z≤1；
One metal anode 13, which is located above AlN film types cold cathode 12, and is not connect with AlN film types cold cathode 12 Touch, the material of the metal anode 13 is Au, Ag, Cu, Al or rustless steel, or be produced on single on glass or sapphire substrate Metal or composition metal, or the indium-tin oxide electrode being produced on glass, or the flat-top to be fixed on adjustable apparatus Metal probe；
One high-voltage power supply 14, its positive pole connect metal anode 13, and the effect of the high-voltage power supply 14 is provided for Flied emission process High voltage, voltage range are 0-5kV；
One galvanometer 15, its positive pole connect high-voltage power supply 14, and negative pole is connected with N-shaped metal electrode 10, the galvanometer 15 Effect is to measure the electronic current that metal anode 13 is received, and measurement range is 1 × 10-9-1×10-1A。
Above-mentioned AlN film types cold cathode 12 and metal anode 13 in 11 Epitaxial growth of N-shaped SiC substrate constitutes electronics and sends out - reception device is penetrated, its measurement process is carried out in vacuum system, system vacuum is 1 × 10-1-1×10-8Pa。
Fig. 2 is the multi-layered material structure schematic diagram of the AlN film type cold cathodes of stepped content gradually variational in N-shaped SiC substrate, The AlN film types cold cathode is made up of the AlGaN thin layers that multilamellar has difference Al components, the number of plies >=2 of AlGaN thin layers, specifically Including：
One N-shaped SiC substrate 20, its resistivity are 0.02-0.2 Ω cm, and thickness is 200-500 μm；
One AlxGal-xN thin film 21, its epitaxial growth in N-shaped SiC substrate 20, the AlxGa1-xAl in N thin film 21 Component >=0；As x=0, the AlxGa1-xN thin film 21 is GaN film of the epitaxial growth in N-shaped SiC substrate 20；It is described AlxGa1-xThe thickness of N thin film 21 is 1-50nm；
One AlyGa1-yN thin film 22, its epitaxial growth is in AlxGa1-xIn N thin film 21, the AlyGa1-yAl in N thin film 22 Component is more than or equal to AlxGa1-xAl components in N thin film 21, its thickness are 1-50nm；
One AlzGa1-zN thin film 23, its epitaxial growth is in AlyGa1-yIn N thin film 22, the AlzGa1-zAl in N thin film 23 Component is more than or equal to AlyGa1-yAl components in N thin film 22, its thickness are 1-50nm；If the AlzGa1-zN thin film 23 is multilamellar Last layer in thin film, then its Al component is 1, as AlN thin film, so that having maximum negatron affine at surface Gesture.
In the specific embodiment shown in Fig. 2, to heretofore described stepped component by taking three layers of AlGaN thin film as an example The multiple structure of the AlN film type cold cathodes of gradual change is elaborated, it is not intended that the thin film number of plies in the present invention It is only limitted to three layers；The AlN film type cold cathodes of every stepped content gradually variational met described in the present invention, i.e., by different Al groups The AlGaN thin layers for dividing are constituted, and the number of plies >=2 of AlGaN thin layers start to be followed successively by Al from N-shaped SiC substratexGa1-xN、AlyGa1-yN、 AlzGa1-zN, the Al components of each layer meet 0≤x ＜ y ＜ z≤1, i.e., within protection scope of the present invention.
Fig. 3 is the band structure schematic diagram of the AlN film type cold cathodes of stepped content gradually variational in N-shaped SiC substrate, wherein Band structure schematic diagram when () is the direct growth monolayer AlN film type cold cathodes in N-shaped SiC substrate a, it can be seen that by The band gap of SiC is much larger than in the band gap of AlN, both interfaces have very high potential barriers, electronics can be seriously hindered from N-shaped SiC mono- Lateral movement is to AlN sides.B () is the AlN film type cold cathodes of the stepped content gradually variational for proposing in the present invention, by Al components Different multilayer Al GaN film is constituted, and along from N-shaped SiC substrate to the direction on AlN surfaces, the Al components of each layer are raised successively. What the either heterogeneous interface of low Al components AlGaN and SiC compositions, or low Al components AlGaN and high Al contents AlGaN were constituted Homogeneity interface, diminish as the difference in band gap of adjacent two layers thin film is relative, thus electronics overcome potential barrier, to during AlN apparent motions Obstruction is greatly reduced.Therefore, tied using the material of the AlN film type cold cathodes of the stepped content gradually variational proposed in the present invention Structure, can effectively improve the field emission performance of AlN film type cold cathodes.
Particular embodiments described above, has been carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail Describe in detail bright, it should be understood that the foregoing is only the specific embodiment of the present invention, be not limited to the present invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention Within the scope of.

Claims (9)

1. AlN film type cold cathodes of a kind of stepped content gradually variational, including：
One N-shaped SiC substrate；
One N-shaped metal electrode, which is produced on N-shaped SiC substrate lower surface；
One AlN film type cold cathodes, its epitaxial growth is in N-shaped SiC substrate；
One metal anode, which is located above AlN film type cold cathodes, and is not contacted with AlN film type cold cathodes；
One high-voltage power supply, its positive pole connect metal anode；
One galvanometer, its positive pole connect high-voltage power supply, and negative pole is connected with N-shaped metal electrode.
2. the AlN film type cold cathodes of stepped content gradually variational as claimed in claim 1, the wherein resistivity of N-shaped SiC substrate For 0.02-0.2 Ω cm, thickness is 200-500 μm.
3. the AlN film type cold cathodes of stepped content gradually variational as claimed in claim 1, the wherein material of N-shaped metal electrode For Ni or Ni/Au, the Ni thickness degree in the Ni or Ni/Au is 50-200nm, and Au thickness degree is 50-200nm.
4. the AlN film type cold cathodes of stepped content gradually variational as claimed in claim 1, wherein AlN film cold cathodes Thickness is 10-500nm, and Si doping contents are 1 × 1018-1×1020cm-3。
5. AlN film type cold cathodes of stepped content gradually variational as claimed in claim 1, the material of wherein metal anode is Au, Ag, Cu, Al or rustless steel, or the single metal or composition metal on being produced on glass or sapphire substrate, or it is produced on glass Indium-tin oxide electrode on glass, or the flat-top metal probe to be fixed on adjustable apparatus.
6. AlN film type cold cathodes of stepped content gradually variational as claimed in claim 1, the effect of wherein high-voltage power supply is for field Emission process provides high voltage, and voltage range is 0-5kV.
7. AlN film type cold cathodes of stepped content gradually variational as claimed in claim 1, wherein galvanometric effect is measurement The electronic current that metal anode is received, measurement range are 1 × 10-9-1×10-1A。
8. AlN film type cold cathodes of stepped content gradually variational as claimed in claim 4, wherein AlN film types cold cathode are put It is placed in vacuum system and measures, vacuum is 1 × 10-1-1×10-8Pa。
9. AlN film type cold cathodes of stepped content gradually variational as claimed in claim 8, wherein AlN film cold cathodes are by more The AlGaN that layer has difference Al components is constituted, and the number of plies >=2 of AlGaN start to be followed successively by Al from N-shaped SiC substratexGal-xN、 AlyGa1-yN、AlzGa1-zN, the Al components of each layer meet 0≤x ＜ y ＜ z≤1.
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WO2017190511A1 (en) * 2016-05-04 2017-11-09 中国科学院苏州纳米技术与纳米仿生研究所 Field emission device and manufacturing method therefor
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CN101060048A (en) * 2006-04-21 2007-10-24 佳能株式会社 Electron-emitting device, electron source, image display apparatus and method of fabricating electron-emitting device
CN104299988A (en) * 2014-09-26 2015-01-21 中国科学院半导体研究所 Nano vacuum triode with planar emitting cathode and manufacturing method thereof

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JP5011523B2 (en) * 2005-03-28 2012-08-29 国立大学法人神戸大学 Organic field emission device

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CN101060048A (en) * 2006-04-21 2007-10-24 佳能株式会社 Electron-emitting device, electron source, image display apparatus and method of fabricating electron-emitting device
CN104299988A (en) * 2014-09-26 2015-01-21 中国科学院半导体研究所 Nano vacuum triode with planar emitting cathode and manufacturing method thereof

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