CN104656971A - Transparent conductive structure with metal grids - Google Patents
Transparent conductive structure with metal grids Download PDFInfo
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- CN104656971A CN104656971A CN201410376880.2A CN201410376880A CN104656971A CN 104656971 A CN104656971 A CN 104656971A CN 201410376880 A CN201410376880 A CN 201410376880A CN 104656971 A CN104656971 A CN 104656971A
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Abstract
The invention discloses a transparent conductive structure with metal grids. The transparent conductive structure comprises a transparent base plate, a first grid structure and a second grid structure; the transparent base plate is equipped with an upper surface, and a lower surface which is opposite to the upper surface; the first grid structure is arranged on the upper surface of the transparent base plate, comprising a first dielectric layer, a first metal layer and a first anti-reflection layer; the first metal layer is arranged on the first dielectric layer; the first anti-reflection layer is arranged on the first metal layer; the second grid structure is arranged on the lower surface of the transparent base plate, comprising a second dielectric layer, a second metal layer and a second anti-reflection layer; the second metal layer is arranged on the second dielectric layer; the second anti-reflection layer is arranged on the second metal layer.
Description
Technical field
The present invention relates to a kind of transparent conducting structures, particularly relate to the transparent conducting structures for the sensing element of contactor control device and manufacture method thereof.
Background technology
At present, contact panel has been widely used on the electronic installations such as device for mobile communication, computer and digital camera.And the technology of production small size contact panel is quite ripe, can be applicable to variously to have in the electronic product of small size display device.
In traditional contact panel, mainly use tin indium oxide (ITO) as transparent conductive material.But compared to the electric conductivity of metal, the surface resistance value (100 ~ 400 Ω/) of ITO and line resistance value (10,000 ~ 50,000 Ω) are all high a lot.Contact panel area is larger, and the total surface resistance of contact panel also increases.Thus, just cause the reaction velocity of contact panel to reduce, or produce the undesirable situation of induction sensitivity.
In existing contact panel, use the transparent conducting structures with metal grill to replace traditional ITO material, such as Graphene, carbon nano-tube or nano-silver thread gradually, however these materials because cost is higher not easily volume production.The transparent conducting structures generally with metal grill mainly has metal level, and wherein metal level is generally using silver as conductive material.
But except cost intensive, argent itself easily produces oxidation reaction or vulcanization reaction, and increases the sheet resistance value of transparent conducting structures, even forms open circuit, causes electrical property failure.Therefore, at present need a kind of new transparent conducting structures and manufacture method thereof, to solve the defect that conventional transparent conductive structure and manufacture method thereof produce.
Summary of the invention
The invention provides a kind of transparent conducting structures using metallic copper as conductive layer and manufacture method thereof, in order to solve the defect of conventional transparent conductive structure and manufacture method thereof.
One aspect of the present invention is to provide a kind of transparent conducting structures.This transparent conducting structures comprises transparency carrier, the first network and the second network.Wherein transparency carrier has upper surface and the lower surface relative to upper surface.
First network is arranged on the upper surface of transparency carrier.Wherein the first network comprises the first dielectric layer, the first metal layer and the first anti-reflecting layer successively by the upper surface of transparency carrier.The first metal layer is arranged on the first dielectric layer, and the first anti-reflecting layer is arranged on the first metal layer.
Second network is arranged on the lower surface of transparency carrier.Wherein the second network comprises the second dielectric layer, the second metal level and the second anti-reflecting layer successively by the lower surface of transparency carrier.Second metal level is arranged on the second dielectric layer, and the second anti-reflecting layer is arranged on the second metal level.
According to one embodiment of the invention, the live width of first, second network above-mentioned is about 2 ~ 15 microns.
According to one embodiment of the invention, above-mentioned transparency carrier is rigid substrates or flexible base plate.According to another embodiment of the present invention, above-mentioned rigid substrates comprises glass, glass fibre or rigid foam.According to still another embodiment of the invention, above-mentioned flexible base plate comprises tygon (PE), polyethylene terephthalate (PET) or triacetate fiber (TAC).
According to one embodiment of the invention, the material of said first dielectric layer and the second dielectric layer is the metallic compound of metal, oxygen containing metallic compound or sulfur-bearing.According to another embodiment of the present invention, above-mentioned metal or metallic compound are selected from the group be made up of nickel (Ni), titanium (Ti), molybdenum (Mo), chromium (Cr), copper (Cu), zinc (Zn), tin (Sn) and alloy thereof.
According to one embodiment of the invention, the thickness of said first dielectric layer and the second dielectric layer is about 1 ~ 200 nanometer.
According to one embodiment of the invention, said first dielectric layer and the second dielectric layer are in blueness, mazarine or black.
According to one embodiment of the invention, the material of above-mentioned first anti-reflecting layer and the second anti-reflecting layer is metal, metal oxide or metal sulfide.According to another embodiment of the present invention, above-mentioned metal is selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, tin, cobalt (Co), tungsten (W), iron (Fe) and alloy thereof.
According to one embodiment of the invention, the thickness of this first anti-reflecting layer above-mentioned and the second anti-reflecting layer is about 5 ~ 1,000 nanometer.
According to one embodiment of the invention, above-mentioned first anti-reflecting layer and the second anti-reflecting layer are in blueness, mazarine or black.
According to one embodiment of the invention, the material of above-mentioned the first metal layer and the second metal level is copper or silver.
According to one embodiment of the invention, the thickness of above-mentioned the first metal layer and the second metal level is 0.2 ~ 3.0 micron.
According to one embodiment of the invention, above-mentioned first network and the second network are grid-like pattern, argyle design or square trellis pattern.
According to one embodiment of the invention, above-mentioned first network also comprises the first attachment (tie coat) layer, between the upper surface that the first adhesion layer is interposed in transparency carrier and the first dielectric layer.And second network also comprise the second adhesion layer, between the lower surface that the second adhesion layer is interposed in transparency carrier and the second dielectric layer.According to one embodiment of the invention, the material of above-mentioned first adhesion layer and the second adhesion layer is the metallic compound of metal, oxygen containing metallic compound or sulfur-bearing.According to another embodiment of the present invention, above-mentioned metal or metallic compound are selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, cobalt, tin, vanadium (V) and alloy thereof.According to still another embodiment of the invention, the thickness of above-mentioned first adhesion layer and the second adhesion layer is about 1 ~ 200 nanometer.
According to one embodiment of the invention, above-mentioned first network also comprises the first protective seam, and the first protective seam covers the first anti-reflecting layer.And second network also comprise the second protective seam, the second protective seam covers the second anti-reflecting layer.According to another embodiment of the present invention, the material of above-mentioned first protective seam and the second protective seam is optical cement (optical clear adhesive, OCA).According to still another embodiment of the invention, above-mentioned optical cement is transparent acrylic glue (transparent acrylic adhesive).According to one more embodiment of the present invention, the thickness of above-mentioned first protective seam and the second protective seam is about 10 ~ 100 microns.
Accompanying drawing explanation
Fig. 1 is the vertical view of the transparent conducting structures 100 according to one embodiment of the invention.
Fig. 2 is the sectional view of the transparent conducting structures 200 according to one embodiment of the invention.
Fig. 3 is the sectional view of the transparent conducting structures 300 according to one embodiment of the invention
Embodiment
Then coordinate accompanying drawing to describe the present invention in detail with embodiment, at accompanying drawing or in describing, similar or identical part uses identical symbol or numbering.In the accompanying drawings, the shape of embodiment or thickness may expand, and to simplify or convenient sign, and in accompanying drawing, the part of element will with text description.Apprehensible, the various patterns that element that is not shown or that do not describe can be known to those skilled in the art.
Term as used herein is only object for describing specific embodiment and is not intended to limit the present invention.As used herein, singulative " one " (a, an) and " being somebody's turn to do " (the) are intended to also comprise plural form, clearly indicate unless separately had herein.Should understand further, when using in this manual, term " comprises " (comprises and/or comprising) and specifies the feature described in existing, integer, step, operation, element and/or component, but does not get rid of existence or add other features one or more, integer, step, operation, element, component and/or its group.Illustrate with reference to the xsect schematically illustrated for idealized embodiments of the present invention (and intermediate structure) herein and describe embodiments of the invention.So, due to the change of (such as) manufacturing technology and/or tolerance, the shape that these illustrate can be departed from.Therefore, embodiments of the invention should be interpreted as the specific region shape illustrated by being limited to herein, but comprise and result from the alteration of form that (such as) manufacture, and region illustrated in these figure is essentially schematically, and its shape is not intended to the true form in the region of devices illustrated and is not intended to limit category of the present invention.
Fig. 1 is the vertical view of the transparent conducting structures 100 according to one embodiment of the invention.In FIG, transparent conducting structures 100 comprises transparency carrier 110, first network 130 and the second network 120.
Wherein the first network 130 has multiple conductive filament, and in horizontal expansion.And the second network 120 has multiple conductive filament, and in extending longitudinally.In a top view, these conductive filaments of the first network 130 and these conductive filaments of the second network 120 are all the grid-like structure of formation interlaced with each other.In one embodiment of this invention, the live width of these conductive filaments of first, second network is about 2 ~ 15 microns, is preferably about 2 ~ 8 microns.Because first, second network has superfine conductive filament, can prevent light from producing the optical phenomena of ripple (moire) or interference fringe (interference fringe).
The transparent conducting structures that embodiments of the invention provide can be applicable in contactor control device or display device.Because this transparent conducting structures has metal level, therefore in one embodiment of this invention, carry out in melanism place for first, second network, produce aberration to avoid metal level to produce light reflection or visually can arrive metallic circuit.On the other hand, because first, second network is mazarine or black, can in order to absorb reflected light or scattered light, and the x-ray diffraction avoiding conductive filament to produce or waviness phenomena.
Fig. 2 is the sectional view of the transparent conducting structures 200 according to one embodiment of the invention.In fig. 2, transparent conducting structures 200 comprises transparency carrier 210, first network 230 and the second network 220.
Wherein, transparency carrier 210 has upper surface and lower surface.First network 230 is positioned at the upper surface of transparency carrier 210; And the second network 220 is positioned at the lower surface of transparency carrier 210.In one embodiment of this invention, transparency carrier is rigid substrates or flexible base plate.In another embodiment of the present invention, rigid substrates comprises glass, glass fibre or rigid foam.In another embodiment of the present invention, flexible base plate comprises tygon (PE), polyethylene terephthalate (PET) or triacetate fiber (TAC).
In fig. 2, the first network 230 comprises the first metal layer 231, first dielectric layer 232 and the first anti-reflecting layer 233.Wherein, by the upper surface of transparency carrier 210, be followed successively by the first dielectric layer 232, the first metal layer 231 and the first anti-reflecting layer 233.
Second network 220 comprises the second metal level 221, second dielectric layer 222 and the second anti-reflecting layer 223.Wherein, by the lower surface of transparency carrier 210, be followed successively by the second dielectric layer 222, second metal level 221 and the second anti-reflecting layer 223.
In one embodiment of this invention, the material of first, second metal level is copper or silver.In another embodiment of the invention, the thickness of first, second metal level is about 0.2 ~ 3.0 micron.Resistivity due to copper is about 1.678 × 10
-6Ω cm, far below other nonmetallic transparent conductive materials, if copper can be become light transmittance reach the conducting film of more than 85%, just can be used as transparent conducting structures.Therefore, in an embodiment of the present invention, copper is become to have the network of very fine wires, light just by the opening printing opacity in network, can make network have preferably penetrability, has preferably electric conductivity simultaneously.
In one embodiment of this invention, the material of first, second dielectric layer be metal, metallic compound containing oxygen or sulfur-bearing.It should be noted that the described metallic compound containing oxygen or sulfur-bearing refers to that oxygen molecule, oxygen atom or sulphur atom are entrained in metallic crystal.
When in metallic crystal when doped with oxygen molecule, oxygen atom or sulphur atom, metallic compound can be made to lose metallic luster, obtain the metallic compound containing oxygen or sulfur-bearing of blueness, mazarine or black.In one embodiment of this invention, metal or metallic compound are selected from the group be made up of nickel (Ni), titanium (Ti), molybdenum (Mo), chromium (Cr), copper (Cu), zinc (Zn), tin (Sn) and alloy thereof.In another embodiment of the invention, first, second dielectric layer is in blueness, mazarine or black.In another embodiment of the present invention, the thickness of first, second dielectric layer is about 1 ~ 200 nanometer.
In one embodiment of this invention, the material of first, second anti-reflecting layer is metal, metal oxide or metal sulfide.In another embodiment of the invention, metal is selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, tin, cobalt (Co), tungsten (W), iron (Fe) and alloy thereof.
The metal oxide provided due to embodiments of the invention is all blueness, mazarine or black, and therefore first, second anti-reflecting layer is in blueness, mazarine or black.In one embodiment of this invention, the thickness of first, second protective seam is about 5 ~ 1,000 nanometer.
Fig. 3 is the sectional view of the transparent conducting structures 300 according to one embodiment of the invention.In figure 3, transparent conductive material 300 comprises transparency carrier 310, first network 330 and the second network 320.
Wherein, transparency carrier 310 has upper surface and lower surface.First network 330 is positioned at the upper surface of transparency carrier 310; And the second network 320 is positioned at the lower surface of transparency carrier 310.In one embodiment of this invention, transparency carrier is rigid substrates or flexible base plate.In another embodiment of the present invention, rigid substrates comprises glass or rigid foam.In another embodiment of the present invention, flexible base plate comprises tygon (PE), polyethylene terephthalate (PET) or triacetate fiber (TAC).
In figure 3, the first network 330 comprises the first metal layer 331, first dielectric layer 332, first anti-reflecting layer 333, first adhesion layer 334 and the first protective seam 335.Wherein, by the upper surface of transparency carrier 310, be followed successively by the first adhesion layer 334, first dielectric layer 332, the first metal layer 331, first anti-reflecting layer 333 and the first protective seam 335.
Second network 320 comprises the second metal level 321, second dielectric layer 322, second anti-reflecting layer 323, second adhesion layer 324 and the second protective seam 325.Wherein, by the lower surface of transparency carrier, be followed successively by the second adhesion layer 324, second dielectric layer 322, second metal level 321, second anti-reflecting layer 323 and the second protective seam 325.
In one embodiment of this invention, the material of first, second metal level is copper or silver.In another embodiment of the invention, the thickness of first, second metal level is about 0.2 ~ 3.0 micron.
In one embodiment of this invention, the material of first, second dielectric layer be metal, metallic compound containing oxygen or sulfur-bearing.It should be noted that the described metallic compound containing oxygen or sulfur-bearing refers to that oxygen molecule, oxygen atom or sulphur atom are entrained in metallic crystal.
When in metallic crystal when doped with oxygen molecule, oxygen atom or sulphur atom, metallic compound can be made to lose metallic luster, obtain the metallic compound containing oxygen or sulfur-bearing of mazarine or black.In one embodiment of this invention, metal or metallic compound are selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, tin and alloy thereof.In another embodiment of the invention, first, second dielectric layer is in blueness, mazarine or black.In another embodiment of the present invention, the thickness of first, second dielectric layer is about 1 ~ 200 nanometer.
In one embodiment of this invention, the material of first, second anti-reflecting layer is metal, metal oxide or metal sulfide.In another embodiment of the invention, metal is selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, tin, cobalt, tungsten, iron and alloy thereof.
The metal oxide provided due to embodiments of the invention is all blueness, mazarine or black, and therefore first, second anti-reflecting layer is in blueness, mazarine or black.In one embodiment of this invention, the thickness of first, second protective seam is about 5 ~ 1,000 nanometer.
According to one embodiment of the invention, the material of above-mentioned first adhesion layer and the second adhesion layer is metal or the metallic compound containing oxygen or sulfur-bearing.According to another embodiment of the present invention, above-mentioned metal or metallic compound are selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, cobalt, tin, vanadium (V) and alloy thereof.In another embodiment of the invention, the thickness of the first adhesion layer and the second adhesion layer is about 1 ~ 200 nanometer.
In one embodiment of this invention, the material of the first protective seam and the second protective seam is optical cement (optical clear adhesive, OCA), such as, can be transparent acrylic glue (clear acrylic adhesive).In another embodiment of the invention, the thickness of the first protective seam and the second protective seam is about 10 ~ 100 microns.
Embodiment one
PET transparency carrier is provided, then carries out following technological process at the upper surface of PET transparency carrier and lower surface simultaneously.On PET transparency carrier, the nickel-chrome of sputter thickness about 20 nanometer is as adhesion layer.Then on adhesion layer sputter pltine as dielectric layer, to strengthen the binding ability between nickel-chrome and copper.
Recycling electroplating process by copper metal-plated on the dielectric layer, forms metal conducting layer.In this embodiment, the thickness of metal conducting layer is about 0.7 micron.The formula of the electroplating solution of above-mentioned formation metal conducting layer is as shown in following table one.
Table one: the formula of the electroplating solution of metal conducting layer
Then electroplating process is utilized, by anti-reflecting layer plating on metal conducting layer.In this embodiment, the thickness of anti-reflecting layer is about 0.1 micron, and its material is the nickel zinc sulphur compound of black.The formula of the electroplating solution of above-mentioned nickel zinc potpourri is as shown in following table two.
Table two: the formula of the electroplating solution of nickel zinc potpourri
Table three: attachment (tie coat) layer of embodiment one and the hue coordinate (L*, a*, b*) of anti oxidation layer
As shown in Table 3, the adhesion layer of this embodiment and the equal convergence black of the hue coordinate of anti-reflecting layer, in order to absorb reflected light or scattered light, and reduce x-ray diffraction phenomenon.
Then, utilize photo-etching technological process, etch above-mentioned adhesion layer, dielectric layer, metal conducting layer and anti-reflecting layer, form network.In this embodiment, the live width of network is about 4 microns.Afterwards, then cover upper in anti-reflecting layer of optical cement (optical clearadhesive, OCA), in order to as protective seam, namely obtain copper metal mesh structure.This copper metal mesh structure can be used as sensing element (sensor) and is applied to contact panel.
Utilize the metallic atom ratio in these layers of inductively coupled plasma (ICP) and elemental analyser mensuration transparent conducting structures and oxygen atom content, to regulate and control surface resistance value and the line resistance value (please refer to table three) of transparent conducting structures, and the color data of these layers.
Table four *: the surface resistance value of embodiment one, line resistance value and light transmittance
Embodiment two
In embodiment two, adhesion layer is oxygen containing molybdenum compound, and the material of anti-reflecting layer is molybdenum oxide.The material of the method for making of embodiment two and all the other each layers, as described in embodiment one, is no longer added to repeat at this.
Utilize the metallic atom ratio in these layers of ICP-AES (ICP-AES) and elemental analyser mensuration transparent conducting structures and oxygen atom content, to regulate and control surface resistance value and the line resistance value of transparent conducting structures, and the color data of these layers (please refer to table five and table six).
Table five: attachment (tie coat) layer of embodiment two and the hue coordinate (L*, a*, b*) of anti oxidation layer
From the result of table five, the color of adhesion layer is close to mazarine, and the color of anti-reflecting layer is also close to mazarine.
Table six *: the surface resistance value of embodiment two, line resistance value and light transmittance
The surface resistance value of the transparent conducting structures that embodiments of the invention provide is about 0.01 ~ 1 Ω/, and line resistance value is less than 700 Ω.The surface resistance value of the transparent conducting structures of this embodiment and line resistance value are all much smaller than surface resistance value (100 ~ 400 Ω/) and the line resistance value (>10,000 Ω) of tin indium oxide.Result is known thus, and the transparent conducting structures that embodiments of the invention provide has lower surface resistance value and comparatively high connductivity degree.When being applied to contactor control device, the transparent conducting structures that embodiments of the invention provide has preferably sensitivity.On the other hand, be all the dielectric layer of mazarine or black up and down due to metal level in the transparent conducting structures that embodiments of the invention provide and protective seam covered, therefore can avoid that light reflects, color offset phenomenon that light scattering or x-ray diffraction produce.
In addition, the metal level of transparent conducting structures that embodiments of the invention provide uses copper as conductive material.Compared to argent, metallic copper has higher chemical stability, not easily damages transparent conducting structures because of oxidation or sulfuration, causes electrical property failure.And also comparatively argent is cheap for the price of metallic copper, significantly can reduce production cost.
Although embodiments of the invention openly as above; so itself and be not used to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when doing a little variation and retouching, therefore protection scope of the present invention is as the criterion when defining with accompanying claims.
Claims (23)
1. there is a transparent conducting structures for metal grill, it is characterized in that, comprise:
Transparency carrier, it has upper surface and the lower surface relative to this upper surface;
First network, it is arranged on this upper surface of this transparency carrier, and wherein this first network is comprised successively by this upper surface of this transparency carrier:
First dielectric layer;
The first metal layer, it is arranged on this first dielectric layer; And
First anti-reflecting layer, it is arranged on this first metal layer; And
Second network, it is arranged on this lower surface of this transparency carrier, and wherein this second network is comprised successively by this lower surface:
Second dielectric layer;
Second metal level, it is arranged on this second dielectric layer; And
Second anti-reflecting layer, it is arranged on this second metal level.
2. have the transparent conducting structures of metal grill as claimed in claim 1, it is characterized in that, the live width of first, second network described is 2 ~ 15 microns.
3. have the transparent conducting structures of metal grill as claimed in claim 1, it is characterized in that, described transparency carrier is rigid substrates or flexible base plate.
4. have the transparent conducting structures of metal grill as claimed in claim 3, it is characterized in that, described rigid substrates comprises glass, glass fibre or rigid foam.
5. have the transparent conducting structures of metal grill as claimed in claim 3, it is characterized in that, described flexible base plate comprises tygon, polyethylene terephthalate or triacetate fiber.
6. have the transparent conducting structures of metal grill as claimed in claim 1, it is characterized in that, the material of described first dielectric layer and described second dielectric layer is the metallic compound of metal, oxygen containing metallic compound or sulfur-bearing.
7. have the transparent conducting structures of metal grill as claimed in claim 6, it is characterized in that, described metal or this metallic compound are selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, tin and alloy thereof.
8. have the transparent conducting structures of metal grill as claimed in claim 1, it is characterized in that, the thickness of described first dielectric layer and described second dielectric layer is 1 ~ 200 nanometer.
9. have the transparent conducting structures of metal grill as claimed in claim 1, it is characterized in that, described first dielectric layer and described second dielectric layer are in blueness, mazarine or black.
10. have the transparent conducting structures of metal grill as claimed in claim 1, it is characterized in that, the material of described first anti-reflecting layer and described second anti-reflecting layer is metal, metal oxide or metal sulfide.
11. transparent conducting structures as claimed in claim 10 with metal grill, it is characterized in that, described metal is selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, tin, cobalt, tungsten, iron and alloy thereof.
12. transparent conducting structures as claimed in claim 1 with metal grill, it is characterized in that, the thickness of described first anti-reflecting layer and described second anti-reflecting layer is 5 ~ 1,000 nanometer.
13. transparent conducting structures as claimed in claim 1 with metal grill, is characterized in that, described first anti-reflecting layer and described second anti-reflecting layer are in blue, mazarine or black.
14. transparent conducting structures as claimed in claim 1 with metal grill, it is characterized in that, the material of described the first metal layer and described second metal level is copper or silver.
15. transparent conducting structures as claimed in claim 1 with metal grill, it is characterized in that, the thickness of described the first metal layer and described second metal level is 0.2 ~ 3.0 micron.
16. transparent conducting structures as claimed in claim 1 with metal grill, it is characterized in that, described first network also comprises the first adhesion layer, between the described upper surface that this first adhesion layer is interposed in described transparency carrier and described first dielectric layer; And described second network also comprises the second adhesion layer, between the described lower surface that this second adhesion layer is interposed in described transparency carrier and described second dielectric layer.
17. transparent conducting structures as claimed in claim 16 with metal grill, it is characterized in that, the material of described first adhesion layer and described second adhesion layer is the metallic compound of metal, oxygen containing metallic compound or sulfur-bearing.
18. transparent conducting structures as claimed in claim 17 with metal grill, it is characterized in that, described metal or described metallic compound are selected from the group be made up of nickel, titanium, molybdenum, chromium, copper, zinc, cobalt, vanadium, tin and alloy thereof.
19. transparent conducting structures as claimed in claim 16 with metal grill, it is characterized in that, the thickness of described first adhesion layer and described second adhesion layer is 1 ~ 200 nanometer.
20. transparent conducting structures as claimed in claim 1 with metal grill, it is characterized in that, described first network also comprises the first protective seam, and this first protective seam covers described first anti-reflecting layer; And described second network also comprises the second protective seam, this second protective seam covers described second anti-reflecting layer.
21. transparent conducting structures as claimed in claim 20 with metal grill, it is characterized in that, the material of described first protective seam and described second protective seam is optical cement.
22. transparent conducting structures as claimed in claim 21 with metal grill, it is characterized in that, described optical cement is transparent acrylic glue.
23. transparent conducting structures as claimed in claim 20 with metal grill, it is characterized in that, the thickness of described first protective seam and described second protective seam is 10 ~ 100 microns.
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| CN107037916A (en) * | 2015-12-15 | 2017-08-11 | Lg伊诺特有限公司 | Touch window |
| CN107329611A (en) * | 2017-06-29 | 2017-11-07 | 业成科技（成都）有限公司 | Narrow frame touch-control module structure and its manufacture method |
| CN108139638A (en) * | 2015-10-27 | 2018-06-08 | 株式会社Lg化学 | Conducting structures, the electrode including the conducting structures and display device |
| CN108762569A (en) * | 2018-05-31 | 2018-11-06 | 信利光电股份有限公司 | A kind of touch-control sensor and touch-control display panel |
| CN109407872A (en) * | 2017-08-17 | 2019-03-01 | 上海和辉光电有限公司 | A kind of flexibility touch sensing and preparation method thereof, display panel, display device |
| CN110690338A (en) * | 2018-07-04 | 2020-01-14 | 安森科技材料股份有限公司 | Aluminum alloy lead frame and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104656971A (en) * | 2013-11-18 | 2015-05-27 | 鼎展电子股份有限公司 | Transparent conductive structure with metal grids |
| CN104656987A (en) * | 2015-01-21 | 2015-05-27 | 业成光电（深圳）有限公司 | Transparent conductive structure with metal grid |
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| CN101675485A (en) * | 2007-04-16 | 2010-03-17 | 日本写真印刷株式会社 | Transparent thin board |
| WO2012134174A2 (en) * | 2011-03-28 | 2012-10-04 | 주식회사 엘지화학 | Conductive structure, touch panel, and method for manufacturing same |
| WO2013008827A1 (en) * | 2011-07-11 | 2013-01-17 | 富士フイルム株式会社 | Conductive laminate body, touch panel, and display device |
| CN203982343U (en) * | 2013-11-18 | 2014-12-03 | 鼎展电子股份有限公司 | There is the transparent conducting structures of metal grill |
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