CN104651796B - The resistance adjustment method of ito thin film - Google Patents
The resistance adjustment method of ito thin film Download PDFInfo
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- CN104651796B CN104651796B CN201310582867.8A CN201310582867A CN104651796B CN 104651796 B CN104651796 B CN 104651796B CN 201310582867 A CN201310582867 A CN 201310582867A CN 104651796 B CN104651796 B CN 104651796B
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Abstract
The present invention provides a kind of resistance adjustment method of ito thin film, and it is at least comprised the following steps：Step S1, to conveying process gas in vacuum chamber, and opens excitation power supply, with the plasma bombardment ITO target for exciting process gas to be formed, and deposits ito thin film on the surface of workpiece to be machined；Step S2, stops to conveying process gas in vacuum chamber, and closes excitation power supply, and makes workpiece to be machined that preset duration is kept in vacuum chamber, and the resistance of ito thin film is adjusted by changing preset duration.The resistance adjustment method of the ito thin film that the present invention is provided, resistance and the resistance homogeneity of raising ito thin film that it can not only reduce ito thin film, such that it is able to improve the processing quality of ito thin film；And input cost can be reduced, and cause that regulation process is simple, such that it is able to improve operating efficiency, and then can increase economic efficiency.
Description
Technical field
The invention belongs to semiconductor processing technology field, and in particular to a kind of resistance adjustment method of ito thin film.
Background technology
The light extraction efficiency of semiconductor devices can be largely improved due to ito thin film, therefore it is widely used
In in LED component.Also, the resistance of ito thin film is the principal element for influenceing LED component electric property, generally thick in ito thin film
In the case of degree identical, the resistance of ito thin film is smaller, and the electric property of LED component is better.
At present, generally using physical vapour deposition (PVD) (Physical Vapor Deposition, hereinafter referred to as PVD) equipment
For preparing ito thin film on the surface of workpiece to be machined.Fig. 1 is the structure diagram of vacuum chamber in existing PVD equipment, please
Refering to Fig. 1, vacuum chamber 10 includes bogey 11, target 12 and magnetron 13.Wherein, bogey 11 is arranged on vacuum chamber
The bottom of room 10, for carrying workpiece to be machined S；Target 12 is arranged on the top of reaction cavity 10, and be arranged on vacuum chamber
Excitation power supply 14 outside room 10 is connected, to when excitation power supply 14 is turned on by vacuum chamber 10 process gas (for example,
Argon gas and oxygen) excite to form plasma；And, excitation power supply 14 provides back bias voltage to target 12, in plasma just
Ion is attracted to bombard the surface of target 12 by negative pressure, the metallic atom on the surface of target 12 is escaped and is deposited on workpiece to be machined
The surface of S, so as to deposit ito thin film on the surface of workpiece to be machined S；Also, magnetron 13 is arranged on the top of target 12, use
So that plasma to be gathered in the lower section of target 12.
In order to improve the electric property of LED component, the output of excitation power supply is generally changed during ito thin film is deposited
The gas flow ratio of power, argon gas and oxygen, the air pressure of vacuum chamber and temperature etc. deposit the parameter of ito thin film, so that ITO is thin
The square resistance Rs of film diminishes, and resistance due to ito thin film is proportional with its square resistance Rs, therefore, ito thin film
The resistance of the smaller i.e. ito thin films of square resistance Rs is smaller.For example, on the premise of ensureing that other specification condition is certain, vacuum chamber
The air pressure of room 10 is higher, and the square resistance Rs for depositing the ito thin film of same thickness is bigger；Or, the temperature of vacuum chamber 10 is got over
Height, the square resistance Rs for depositing the ito thin film of same thickness is smaller；Or, the timing of argon stream amount one, the throughput of oxygen from
It is small to big, the square resistance Rs for depositing the ito thin film of same thickness first reduces and increases afterwards.
However, the square resistance Rs for reducing ito thin film by the above method has found that this can make in practical work process
The square resistance Rs for obtaining ito thin film is changed greatly, so that the resistance variations of ito thin film are larger, so as to cause ito thin film
Resistance homogeneity is poor, and then causes the processing quality of ito thin film poor.
The content of the invention
Present invention seek to address that technical problem present in prior art, there is provided a kind of resistance adjustment side of ito thin film
Method, resistance and the resistance homogeneity of raising ito thin film that it can not only reduce ito thin film, such that it is able to improve ito thin film
Processing quality；And input cost can be reduced, and cause that regulation process is simple, such that it is able to improve operating efficiency, Jin Erke
To increase economic efficiency.
The present invention provides a kind of resistance adjustment method of ito thin film, at least comprises the following steps：Step S1, to vacuum chamber
Indoor conveying process gas, and excitation power supply is opened, to excite the process gas to form plasma bombardment ITO target, with
The ito thin film is deposited on the surface of workpiece to be machined；Step S2, stops to conveying the process gas in the vacuum chamber
Body, and the excitation power supply is closed, and the workpiece to be machined is kept preset duration in the vacuum chamber, by changing
The preset duration adjusts the resistance of the ito thin film.
Wherein, the scope of the preset duration is within 10 minutes.
Preferably, the preset duration is 6 minutes.
Wherein, in the step S1 and the step S2, the air pressure range of the vacuum chamber is in 1.0~7.0mT.
Wherein, the step S2 also includes, to argon gas is conveyed in the vacuum chamber, by the air-flow for adjusting the argon gas
Measure to change the air pressure of the vacuum chamber, to adjust the resistance of the ito thin film.
Wherein, the scope of the throughput of the argon gas is in 0~200sccm.
Wherein, the step S1 is comprised the following steps：Step S11, deposits on the surface of the workpiece to be machined in advance
The ito thin film of first thickness；Step S12, deposits the ITO of second thickness on the ito thin film of first thickness
Film.
Wherein, in the step S1, the process gas includes argon gas and oxygen, and the excitation power supply includes radio frequency electrical
Source and/or dc source.
Wherein, include in the parameter needed for the step S11：The power output of the radio-frequency power supply is 250W, described
The power output of dc source is 130W, and the throughput of the oxygen is 0.15sccm, and the throughput of the argon gas is 35sccm,
The air pressure of the vacuum chamber is 1.0mT.
Wherein, include in the parameter needed for the step S12：The power output of the radio-frequency power supply is 0W, described straight
The power output for flowing power supply is 130W, and the throughput of the oxygen is 0.2sccm, and the throughput of the argon gas is 80sccm, institute
The air pressure for stating vacuum chamber is 2.0mT.
The present invention has following beneficial effects：
The resistance adjustment method of the ito thin film that the present invention is provided, it includes step S1, to conveying process gas in vacuum chamber
Body, and excitation power supply is opened, with the plasma bombardment ITO target for exciting process gas to be formed, and in the table of workpiece to be machined
Ito thin film is deposited on face；Step S2, stops to conveying process gas in vacuum chamber, and closes excitation power supply, and makes to be processed
Workpiece keeps preset duration in vacuum chamber, and the resistance of ito thin film is adjusted by changing preset duration.From the foregoing, it will be observed that
Deposited in step S1 and also increase step S2 after ito thin film, due to that can have a small amount of technique in vacuum chamber in step s 2
Gas, and the content of the process gas can change in preset duration and influence ito thin film so that the square of ito thin film
Resistance reduces, and such that it is able to reducing the resistance of ito thin film and improving the resistance homogeneity of ito thin film, and then it is thin to improve ITO
The processing quality of film；And, adjust ito thin film only by a small amount of process gas having in vacuum chamber in step s 2
Resistance, this with the prior art by the parameter of the deposition film such as power output that changes excitation power supply compared with, can reduce
Input cost, and cause that regulation process is simple, such that it is able to improve operating efficiency, and then can increase economic efficiency.
Brief description of the drawings
Fig. 1 is the structure diagram of vacuum chamber in existing PVD equipment；
The FB(flow block) of the resistance adjustment method of the ito thin film that Fig. 2 is provided for the present invention；
Fig. 3 is the curve map of the square resistance parameter of ito thin film；
Fig. 4 is the curve map of the uniformity parameters of the square resistance of ito thin film；
Fig. 5 is the curve map of the thickness parameter of ito thin film；And
Fig. 6 is curve map of the ito thin film to the film transmission rate parameter of wavelength 455nm.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is carried below in conjunction with the accompanying drawings
The resistance adjustment method of the ito thin film of confession is described in detail.
The FB(flow block) of the resistance adjustment method of the ito thin film that Fig. 2 is provided for the present invention.Fig. 2 is referred to, the ito thin film
Resistance adjustment method at least comprise the following steps：
Step S1, to conveying process gas in vacuum chamber, and opens excitation power supply, to excite what process gas was formed etc.
Gas ions bombard ITO target, and deposit ito thin film on the surface of workpiece to be machined；
Step S2, stops to conveying process gas in vacuum chamber, and closes excitation power supply, and makes workpiece to be machined true
Preset duration is kept in plenum chamber, the resistance of ito thin film is adjusted by changing preset duration.
In the present embodiment, step S1 is comprised the following steps,
Step S11, deposits the ito thin film of first thickness on the surface of workpiece to be machined in advance, in the present embodiment, tool
Body ground, first thickness is 20nm；
Step S12, deposits the ito thin film of second thickness, in the present embodiment, specifically on the ito thin film of first thickness
Ground, second thickness is 100nm.
Wherein, in step sl, process gas includes argon gas and oxygen, and excitation power supply is including radio-frequency power supply RF and/or directly
Stream power supply DC.Specifically, the parameter in step s 11 needed for the ito thin film of deposition 20nm thickness includes：Radio-frequency power supply RF's is defeated
Go out power for 250W, the power output of dc source DC is 130W, and the throughput of oxygen is 0.15sccm, and the throughput of argon gas is
35sccm, the air pressure of vacuum chamber is 1.0mT；The parameter needed for the ito thin film of deposition 100nm thickness includes in step s 12：
The power output of radio-frequency power supply RF is 0W, and the power output of dc source DC is 130W, and the throughput of oxygen is 0.2sccm, argon
The air flow value of gas is 80sccm, and the air pressure of vacuum chamber is 2.0mT.Therefore, can complete in workpiece to be machined in step sl
Upper surface on deposit thickness for 120nm ito thin film.
After step S1 completions, specifically, in step s 2, stop to conveying argon gas and oxygen in vacuum chamber, and
Radio-frequency power supply RF and dc source DC is closed, and keeps the other specification (for example, temperature of vacuum chamber) of vacuum chamber to keep
It is constant, and the workpiece to be machined for depositing the ito thin film for having thickness to be 120nm is kept into preset duration in vacuum chamber, at this
In embodiment, the scope of preset duration is within 10 minutes.It is readily appreciated that, in step s 2, stops being conveyed in vacuum chamber
Argon gas and oxygen, this causes that the air pressure of vacuum chamber reduces to a certain extent.Also, S1 and step the step of the present embodiment
In S2, the air pressure range of vacuum chamber is in 1.0~7.0mT.
Verify that the present embodiment provides the resistance adjustment method of ito thin film in detail with reference to Fig. 3~Fig. 6：In this implementation
In example, the different parameters curve map of the ito thin film under conditions of different preset durations (2,4,6,8 and 10 minutes) is depicted.
Specifically, Fig. 3 is the curve map of the square resistance parameter of ito thin film, wherein, transverse axis represents the size of preset duration, and unit is
Minute (min)；Vertical pivot represents the size of the square resistance Rs of ito thin film, and unit is ohm per side (Ω/sq).From Fig. 3 easily
Find out, with the increase of preset duration, the square resistance Rs of ito thin film first reduces and increases afterwards, and 6 points are equal in preset duration
Zhong Shi, the square resistance Rs of ito thin film is minimum.
Fig. 4 is the curve map of the uniformity parameters of the square resistance of ito thin film, wherein, transverse axis represents the big of preset duration
Small, unit is minute (min)；Vertical pivot represents the uniformity of the square resistance Rs of ito thin film, and unit is percentage (%), and
The uniformity of the bigger square resistance Rs for representing ito thin film of numerical value of even property is poorer.From Fig. 4 it can easily be seen that with preset duration
Increase, the numerical value of uniformity is gradually reduced, i.e. the uniformity of the square resistance Rs of ito thin film is gradually stepped up, and when default
Long when being equal to 6 minutes, the uniformity of the square resistance Rs of ito thin film reaches best.
Fig. 5 is the curve map of the thickness parameter of ito thin film, wherein, transverse axis represents the size of preset duration, and unit is minute
(min)；Vertical pivot represents the thickness of ito thin film, and unit is nanometer (nm).From Fig. 5 it can easily be seen that with the increase of preset duration,
The thickness of ito thin film changes up and down in the position a small range near 120nm, and this causes the thickness of ito thin film in certain mistake
It is constant in difference scope, i.e. the thickness of ito thin film becomes with the thickness of the ito thin film in step S1 depositions after increase step S2
Change less, therefore, increasing for step S2 will not produce influence to the thickness of ito thin film.
Fig. 6 is that ito thin film is the curve map of the film transmission rate parameter of 455nm to wavelength, wherein, when transverse axis represents default
Size long, unit is minute (min)；Vertical pivot represents the film transmission rate of ito thin film, and unit is percentage (%).Hold from Fig. 6
Easily find out, with the increase of preset duration, the film transmission rate of ito thin film is carrying out the upper of small range at 99% position
Lower fluctuation, i.e. the film transmission rate of ito thin film keeps constant, therefore, the increase of step S2 will not be saturating to the film of ito thin film
Cross rate and produce influence.
From the foregoing, it will be observed that the resistance adjustment method of the ito thin film of the present embodiment offer will not only be produced to the parameter of ito thin film
Raw influence, for example：Thickness parameter and film transmission rate parameter, and the uniformity of the square resistance Rs of ito thin film can be improved
Parameter is minimum and reduces the square resistance Rs of ito thin film, because the square resistance Rs of ito thin film and the resistance of ito thin film are into just
Than relation, therefore, the resistance adjustment method of the ito thin film that the present embodiment is provided can reduce the resistance of ito thin film and improve ITO
The resistance homogeneity of film, such that it is able to improve the processing quality of ito thin film, and then can improve the electric property of LED component.
In addition, as from the foregoing, it is preferable that preset duration is 6 minutes, and this causes that the square resistance Rs's of ito thin film is uniform
Property preferably and ito thin film square resistance Rs minimum, such that it is able to largely improve the processing quality of ito thin film.
It should be noted that in the present embodiment, for the ito thin film of the 120nm thickness for depositing in step sl, passing through
Preset duration is set to adjust the resistance of the ito thin film of the thickness, and, it is preferable that preset duration is 6 minutes.But, this hair
It is bright to be not limited thereto, in actual applications, it is also possible to in step S11 deposit first thickness for 20nm ito thin film or
Second thickness to being deposited in step S12 adjusts correspondence thickness for the ito thin film of 100nm separately through setting preset duration
The resistance of ito thin film, or, it is also possible to the ito thin film of any thickness to depositing in step sl, by setting preset duration
To adjust the resistance of the ito thin film of correspondence thickness.
Also, it should be noted that in actual applications, can according to the thickness of deposition ito thin film and vacuum chamber other
Parameter sets preset duration, to reduce the resistance of ito thin film and improve the resistance homogeneity of ito thin film, realizing ito thin film
Resistance is minimum and uniformity highest.For example, the certain situation of the other specification of the thickness of default ito thin film and vacuum chamber
Under, when radio-frequency power supply RF and dc source DC in step sl power output than it is larger (>300W), the oxygen and in vacuum chamber
When Gas content is more, the Rs of the square resistance of the ito thin film for now depositing is larger, and the square resistance of ito thin film Rs most
Value is more than the 50% of minimum value greatly, therefore, in this case, then should set preset duration more long to reduce ITO as far as possible
The uniformity of the square resistance Rs and raising square resistance Rs of film.
It is further to note that the step of the present embodiment in S2, because argon gas will not produce influence to ito thin film,
Accordingly it is also possible in step s 2, by the air pressure for adjusting the throughput of argon gas to change vacuum chamber, to adjust ito thin film
Resistance, this causes that argon gas can change distribution of a small amount of oxygen in vacuum chamber in vacuum chamber, such that it is able to enter one
Walk and the resistance of ito thin film is adjusted.Also, the scope of the throughput of argon gas is in 0~200sccm.
Explanation is needed further exist for, in step sl, it would however also be possible to employ (penetrated by changing excitation power supply in the prior art
Frequency power RF or dc source DC) power output, the gas flow ratio of argon gas and oxygen, the air pressure of vacuum chamber and temperature etc.
The parameter of ito thin film is deposited to reduce the square resistance Rs of ito thin film, therefore, realize reducing ito thin film in step sl
After square resistance Rs, then can further reduce the square resistance Rs of ito thin film by step S2, such that it is able to further reduction
The resistance of ito thin film, and then the processing quality of ito thin film can be improved.
In sum, the resistance adjustment method of the ito thin film that the present invention is provided, it includes step S1, in vacuum chamber
Conveying process gas, and excitation power supply is opened, with the plasma bombardment ITO target for exciting process gas to be formed, and added
Ito thin film is deposited on the surface of work workpiece；Step S2, stops to conveying process gas in vacuum chamber, and closes excitation power supply,
And make workpiece to be machined that preset duration is kept in vacuum chamber, the resistance of ito thin film is adjusted by changing preset duration.By
It is upper to understand, deposit also increase step S2 after ito thin film in step sl, it is few due to that can have in vacuum chamber in step s 2
The process gas of amount, and the content of the process gas can change in preset duration and influence ito thin film, such that it is able to subtract
The resistance of small ito thin film and the resistance homogeneity of raising ito thin film, and then the processing quality of ito thin film can be improved；And,
The resistance of ito thin film is adjusted only by a small amount of process gas having in vacuum chamber in step s 2, this and existing skill
Compared by changing the parameter of the deposition film such as power output of excitation power supply in art, input cost can be reduced, and cause to adjust
Section process is simple, such that it is able to improve operating efficiency, and then can increase economic efficiency.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, original of the invention is not being departed from
In the case of reason and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of resistance adjustment method of ito thin film, it is characterised in that at least comprise the following steps：
Step S1, to conveying process gas in vacuum chamber, and opens excitation power supply, with excite the process gas to be formed etc. from
ITO target is bombarded in daughter, to deposit the ito thin film on the surface of workpiece to be machined；
Step S2, stops to conveying the process gas in the vacuum chamber, and closes the excitation power supply, and makes the quilt
Processing workpiece keeps preset duration in the vacuum chamber, and the ito thin film is adjusted by changing the preset duration
Resistance.
2. the resistance adjustment method of ito thin film according to claim 1, it is characterised in that the scope of the preset duration
Within 10 minutes.
3. the resistance adjustment method of ito thin film according to claim 2, it is characterised in that the preset duration is 6 points
Clock.
4. the resistance adjustment method of ito thin film according to claim 1, it is characterised in that in the step S1 and described
In step S2, the air pressure range of the vacuum chamber is in 1.0~7.0mT.
5. the resistance adjustment method of ito thin film according to claim 1, it is characterised in that the step S2 also includes, to
Conveying argon gas in the vacuum chamber, by the air pressure for adjusting the throughput of the argon gas to change the vacuum chamber, to adjust
Save the resistance of the ito thin film.
6. the resistance adjustment method of ito thin film according to claim 5, it is characterised in that the throughput of the argon gas
Scope is in 0~200sccm.
7. the resistance adjustment method of ito thin film according to claim 1, it is characterised in that the step S1 includes following
Step：
Step S11, deposits the ito thin film of first thickness on the surface of the workpiece to be machined in advance；
Step S12, deposits the ito thin film of second thickness on the ito thin film of first thickness.
8. the resistance adjustment method of ito thin film according to claim 7, it is characterised in that described in the step S1
Process gas includes argon gas and oxygen, and the excitation power supply includes radio-frequency power supply and/or dc source.
9. the resistance adjustment method of ito thin film according to claim 8, it is characterised in that needed for the step S11
Parameter include：The power output of the radio-frequency power supply is 250W, and the power output of the dc source is 130W, the oxygen
Throughput be 0.15sccm, the throughput of the argon gas is 35sccm, and the air pressure of the vacuum chamber is 1.0mT.
10. the resistance adjustment method of ito thin film according to claim 8, it is characterised in that the institute in the step S12
The parameter for needing includes：The power output of the radio-frequency power supply is 0W, and the power output of the dc source is 130W, the oxygen
Throughput be 0.2sccm, the throughput of the argon gas is 80sccm, and the air pressure of the vacuum chamber is 2.0mT.
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| CN105063557B (en) * | 2015-08-06 | 2018-02-09 | 国营第二二八厂 | A kind of method for orienting increase ITO conducting film resistances |
| JP7116994B2 (en) * | 2018-06-27 | 2022-08-12 | ロック技研工業株式会社 | ITO film and transparent conductive film |
| CN111599918B (en) * | 2020-06-01 | 2022-03-25 | 西南科技大学 | all-ITO memristor and preparation method thereof |
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