CN110218984A - Membrane deposition method - Google Patents
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- CN110218984A CN110218984A CN201910645772.3A CN201910645772A CN110218984A CN 110218984 A CN110218984 A CN 110218984A CN 201910645772 A CN201910645772 A CN 201910645772A CN 110218984 A CN110218984 A CN 110218984A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/586—Nitriding
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- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of membrane deposition method comprising: pre-treatment step is passed through process gas into reaction chamber and can remove the pretreatment gas of the impurity in wafer surface；First deposition step, stopping is passed through pretreatment gas, and continues to be passed through process gas into reaction chamber, and opens excitation power supply, applies exciting power to target, to form buffer layer on chip；Second deposition step improves exciting power, and opens grid bias power supply, power is biased to pedestal, to form film on chip；Post-processing step closes excitation power supply and grid bias power supply, and stops being passed through process gas into reaction chamber, while being passed through the post-treatment gas that can be improved the performance of film into reaction chamber.Membrane deposition method provided by the invention can not only reduce the resistivity of film, realize the adjusting of membrane stress, but also can increase process window, expand application range.
Description
Technical field
The present invention relates to semiconductor process technique fields, and in particular, to a kind of membrane deposition method.
Background technique
Barrier layer, adhesive layer and metal hard mask of the TiAlN thin film as a kind of multifunctional material, in integrated circuit manufacture process
Etc. be widely used in techniques, the TiAlN thin film prepared using Traditional DC magnetron sputtering technique, because it have it is higher
Deposition rate, good uniformity of film, pollution less and the advantage of production capacity height etc., become in integrated circuit metallization processing procedure most often
One of physical vapour deposition (PVD) (Physical Vapor Deposition, hereinafter referred to as PVD) method.
But traditional PVD method, by the way of single step deposition, the resistivity for the TiAlN thin film that this mode obtains is high
And stress is non-adjustable (adjusting between compression and tensile stress), while process window is smaller, so that the limitation of application is larger.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of film deposition side is proposed
Method can not only reduce the resistivity of film, realize the adjusting of membrane stress, but also can increase process window, expand
Application range.
To achieve the above object, the present invention provides a kind of membrane deposition methods, comprising:
Pre-treatment step is passed through process gas into reaction chamber and can remove the pretreatment of the impurity in wafer surface
Gas；
First deposition step, stopping is passed through the pretreatment gas, and continues to be passed through the work into the reaction chamber
Skill gas, and excitation power supply is opened, apply exciting power to target, to form buffer layer on the wafer；
Second deposition step improves the exciting power, and opens grid bias power supply, is biased power to pedestal, with
Film is formed on the chip；
Post-processing step closes the excitation power supply and grid bias power supply, and stops being passed through into the reaction chamber described
Process gas, while the post-treatment gas that can be improved the performance of the film is passed through into the reaction chamber.
Optionally, in the pre-treatment step, the pretreatment gas includes hydrogen.
Optionally, the pre-treatment step specifically includes:
S11 vacuumizes the reaction chamber, so that chamber pressure reaches preset first pressure value；
Chip is sent on the pedestal by S12, and the heating temperature of the pedestal is preset temperature value；
It is passed through the pretreatment gas in S13, Xiang Suoshu reaction chamber, and the chamber pressure is made to be maintained at preset
Two pressure values.
Optionally, the value range of the second pressure value is in 50-500mTorr.
Optionally, the value range of the second pressure value is in 150-200mTorr.
Optionally, the process gas includes nitrogen, or the mixed gas including argon gas and nitrogen.
Optionally, the value range of the flow of the nitrogen is in 100-500sccm；The value range of the flow of the argon gas
In 100-500sccm；The value range of the flow of the hydrogen is in 10-200sccm.
Optionally, the excitation power supply includes DC power supply and radio-frequency power supply；
In first deposition step, while the DC power supply and radio-frequency power supply are opened, Xiang Suoshu target applies straight
Flow power and radio-frequency power；Also, by the ratio for adjusting the dc power and radio-frequency power, to adjust the life of the film
Long crystal orientation.
Optionally, the value range of the dc power and the ratio of radio-frequency power is in 1:10-10:1.
Optionally, the dc power and the ratio of radio-frequency power are 1:2 or 2:1.
Optionally, in first deposition step and second deposition step, the process gas include argon gas and
The mixed gas of nitrogen；
The value range of the flow proportional of the nitrogen and the argon gas is in 1.2-1.5.
Optionally, the value range of the flow of the nitrogen is in 300-500sccm；The value range of the flow of the argon gas
In 200-300sccm.
Optionally, in second deposition step, the value range of the ratio of the dc power and radio-frequency power exists
3:1-6:1。
Optionally, in first deposition step, the value range of the dc power is in 3-5KW；The radio frequency function
The value range of rate is in 1-3KW；
In second deposition step, the value range of the dc power is in 15-20KW；The radio-frequency power takes
It is worth range in 3-5KW.
Optionally, in second deposition step, by size of the size to resistivity for adjusting the substrate bias power
It is adjusted with membrane stress, the value range of the substrate bias power is in 50-500W.
Optionally, the film be TiAlN thin film, in the post-processing step, the post-treatment gas include nitrogen and
The mixed gas of hydrogen.
Optionally, the value range of the flow of the nitrogen is in 300-500sccm；The value range of the flow of the hydrogen
In 50-200sccm.
Optionally, in first deposition step, second deposition step and the post-processing step, chamber pressure
Value range in 150-200mTorr.
Beneficial effects of the present invention:
Membrane deposition method provided by the present invention comprising: pre-treatment step, for by being passed through process gas and pre-
Processing gas makes chamber pressure reach stable, while can to remove preceding road technique remaining on a surface of a wafer for pretreatment gas
Impurity；First deposition step, for forming buffer layer on chip, which can stop chip and both materials of film
It is spread at interface, discharges the interfacial stress between both materials, improve adhesive force；Second deposition step, in crystalline substance
On piece forms film, while in this step, opens grid bias power supply to pedestal and is biased power, can be by adjusting bias function
The size and membrane stress of resistivity is adjusted in the size of rate, so as to reach the resistivity for reducing film, makes film
The purpose that stress changes from compression to tensile stress, and then the defect inside film can be not only reduced, but also work can be increased
Skill window expands application range；Post-processing step reduces film resiativity, for improving film compactness so as to improve
Film performance.
Detailed description of the invention
Fig. 1 is the flow diagram of membrane deposition method provided in an embodiment of the present invention；
Fig. 2 is the flow diagram of pre-treatment step used in the embodiment of the present invention；
Fig. 3 is the film X-ray diffractogram obtained using membrane deposition method provided in an embodiment of the present invention；
Fig. 4 is the substrate bias power curve graph with film resiativity and stress respectively.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, the present invention is mentioned with reference to the accompanying drawing
The membrane deposition method of confession is described in detail.
Referring to Fig. 1, membrane deposition method provided in an embodiment of the present invention comprising:
Pre-treatment step S1 is passed through process gas into reaction chamber and can remove the pre- place of the impurity in wafer surface
Process gases.
In pre-treatment step S1, chamber pressure is set to reach stable by being passed through process gas and pretreatment gas, together
When pretreatment gas can remove the preceding road technique impurity such as remaining oxygen, carbon on a surface of a wafer.
Optionally, referring to Fig. 2, pre-treatment step S1 is specifically included:
S11 vacuumizes reaction chamber, so that chamber pressure reaches preset first pressure value；
Above-mentioned first pressure value meets the state for making chamber reach ultravacuum, for example, first pressure value is usually less than 5*10- 6Torr.In this way, it is possible to reduce the foreign gas and steam of chamber interior, to can both be splashed to avoid these gases with from target
The atom of injection combines, and pollutes film, and can generate spark phenomenon to avoid chamber interior, generates serious particle issues.
Chip is sent on pedestal by S12, and the heating temperature of pedestal is preset temperature value；
Optionally, above-mentioned preset temperature value is 400 DEG C.
S13 is passed through pretreatment gas into reaction chamber, and chamber pressure is made to be maintained at preset second pressure value.
Optionally, pretreatment gas includes hydrogen.The introducing of hydrogen can effectively remove preceding road technique on a surface of a wafer
The impurity such as remaining oxygen, carbon.
Optionally, the value range of second pressure value is in 50-500mTorr.Preferably, the value model of the second pressure value
It is trapped among 150-200mTorr.It is to obtain the premise of compression (being greater than 0), and higher pressure is answered using higher chamber pressure
Power can not only increase process window, expand application range, also contribute to the resistivity for reducing film.
For the deposition of titanium nitride membrane, process gas includes the mixed gas of argon gas and nitrogen, wherein the introducing of argon gas
Plasma density is helped to improve, certainly, in practical applications, process gas can also only include nitrogen.Optionally, nitrogen
Flow value range in 100-500sccm；The value range of the flow of argon gas is in 100-500sccm；The flow of hydrogen
Value range is in 10-200sccm.
First deposition step S2, stopping is passed through pretreatment gas, and continues to be passed through above-mentioned process gas into reaction chamber,
And excitation power supply is opened, apply exciting power to target, to form buffer layer on chip.
The buffer layer can stop chip and both materials of film to spread at interface, discharge the boundary between both materials
Face stress improves adhesive force.
Optionally, excitation power supply includes DC power supply and radio-frequency power supply.DC power supply and radio-frequency power supply are opened simultaneously, both may be used
To increase process window, expand application range, and can be by the ratio of adjusting dc power and radio-frequency power, to adjust film
Growth crystal orientation.Certainly, in practical applications, DC power supply can also only be opened.
In the first deposition step S2, while DC power supply and radio-frequency power supply are opened, apply dc power to target and penetrated
Frequency power；Also, by the ratio for adjusting dc power and radio-frequency power, to adjust the growth crystal orientation of film.
By taking the deposition of titanium nitride membrane as an example, by selecting the ratio of suitable dc power and radio-frequency power, Ke Yizeng
Add the ionization and collision of titanium atom and nitrogen-atoms in high density, changes titanium nitride membrane when wafer surface is grown
Lateral transfer, to change the growth crystal orientation of film.Specifically, the growth crystal orientation both direction of film can be made while being deposited
, that is, cubic growth direction (111 direction) and the rectangle direction of growth (200 direction) exist simultaneously, so as to avoid growth brilliant
It is too fast to being grown towards cubic growth direction.Optionally, the value range of dc power and the ratio of radio-frequency power is in 1:10-10:
1.Preferably, in the first deposition step S2, the ratio of dc power and radio-frequency power is 1:2 or 2:1.
Referring to Fig. 3, for the film X-ray diffractogram obtained using membrane deposition method provided in an embodiment of the present invention.
From the figure 3, it may be seen that the growth crystal orientation of the film obtained using membrane deposition method provided in an embodiment of the present invention is along a cube life
What length direction (111 direction) and the rectangle direction of growth (200 direction) the two directions were grown.
Optionally, in the first deposition step S2, it is constant that chamber pressure is maintained at above-mentioned second pressure value.Using higher
Chamber pressure is to obtain the premise of compression (being greater than 0), and higher compression can not only increase process window, expand
Application range also contributes to the resistivity for reducing film.
Second deposition step S3 improves exciting power, and opens grid bias power supply, power is biased to pedestal, in crystalline substance
On piece forms film.
Second deposition step S3 opens grid bias power supply to pedestal for forming film on chip, while in this step
The substrate bias power of application can be adjusted the size and membrane stress of resistivity by adjusting the size of substrate bias power, from
And can achieve the resistivity for reducing film, the purpose for changing membrane stress from compression to tensile stress, and then not only can be with
The defect inside film is reduced, and process window can be increased, expands application range.
In the second deposition step S3, optionally, the value range of substrate bias power is in 50-500W.It in the range, can be with
The defect inside film is effectively reduced, and process window can be increased, expands application range.
Referring to Fig. 4, being the substrate bias power curve graph with film resiativity and stress respectively.In Fig. 4, abscissa is inclined
Press power；Left side ordinate is resistivity；Right side ordinate is stress.It can be with by the curve of the resistivity of substrate bias power and film
Find out, when substrate bias power is greater than 50W, film resiativity declines to a great extent.It can be with by the curve of substrate bias power and the stress of film
Find out, substrate bias power is bigger, then membrane stress changes from compression to tensile stress；Conversely, substrate bias power is smaller, then membrane stress
From tensile stress to transformation for stress, to adjust the size of substrate bias power, can control effectively to membrane stress, so as to
To obtain film of different nature, adjusting window is increased, application range is expanded.
Optionally, in the first deposition step S2 and the second deposition step S3, process gas includes the mixed of argon gas and nitrogen
Close gas.Optionally, the value range of the flow proportional of nitrogen and argon gas is in 1.2-1.5.This can both turn to avoid membrane stress
Become compression, process window is caused to reduce, and titanium nitride can be formed in target material surface to avoid due to nitrogen content is excessively high, thus
It causes to generate serious particle contamination because target material surface peels off.
Optionally, the value range of the flow of nitrogen is in 300-500sccm；The value range of the flow of argon gas is in 200-
300sccm。
Optionally, in the second deposition step S3, the value range of the ratio of dc power and radio-frequency power is in 3:1-6:
1.Power proportions used by the step increase relative to the first deposition step S2, and film deposition rate can be improved in this,
To be conducive to improve production capacity.
Optionally, in the first deposition step S2, the value range of dc power is in 3-5KW；The value model of radio-frequency power
It is trapped among 1-3KW；In the second deposition step S3, the value range of dc power is in 15-20KW；The value range of radio-frequency power exists
3-5KW。
Optionally, in the second deposition step S3, it is constant that chamber pressure is maintained at above-mentioned second pressure value.Using higher
Chamber pressure is to obtain the premise of compression (being greater than 0), and higher compression can not only increase process window, expand
Application range also contributes to the resistivity for reducing film.
Post-processing step S4 closes excitation power supply and grid bias power supply, and stops being passed through process gas into reaction chamber, together
When the post-treatment gas that can be improved the performance of film is passed through into reaction chamber.
Post-processing step S4 reduces film resiativity, for improving film compactness so as to improve film performance.
Optionally, for the TiAlN thin film of deposition, in post-processing step S4, post-treatment gas includes nitrogen and hydrogen
Mixed gas.By taking the deposition of titanium nitride membrane as an example, by introducing nitrogen, nitridation reaction can be sent out in titanium nitride thin film surface,
Nitrogen vacancy and the dangling bonds for reducing film surface, improve the stability and compactness of film surface, further decrease the electricity of film
Resistance rate；Meanwhile by introducing hydrogen, the impurity such as remaining oxygen, carbon on a surface of a wafer are removed.
Optionally, the value range of the flow of nitrogen is in 300-500sccm；The value range of the flow of hydrogen is in 50-
200sccm。
Optionally, in post-processing step S4, it is constant that chamber pressure is maintained at above-mentioned second pressure value.Using higher chamber
Chamber pressure is to obtain the premise of compression (being greater than 0), and higher compression can not only increase process window, and expansion is answered
With range, the resistivity for reducing film is also contributed to.
In conclusion membrane deposition method provided in an embodiment of the present invention, can not only reduce the resistivity of film, it is real
The adjusting of existing membrane stress, but also process window can be increased, expand application range.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (18)
1. a kind of membrane deposition method characterized by comprising
Pre-treatment step is passed through process gas into reaction chamber and can remove the pretreatment gas of the impurity in wafer surface
Body；
First deposition step, stopping is passed through the pretreatment gas, and continues to be passed through the process gas into the reaction chamber
Body, and excitation power supply is opened, apply exciting power to target, to form buffer layer on the wafer；
Second deposition step improves the exciting power, and opens grid bias power supply, power is biased to pedestal, described
Film is formed on chip；
Post-processing step closes the excitation power supply and grid bias power supply, and stops being passed through the technique into the reaction chamber
Gas, while the post-treatment gas that can be improved the performance of the film is passed through into the reaction chamber.
2. membrane deposition method according to claim 1, which is characterized in that in the pre-treatment step, the pre- place
Process gases includes hydrogen.
3. membrane deposition method according to claim 1 or 2, which is characterized in that the pre-treatment step specifically includes:
S11 vacuumizes the reaction chamber, so that chamber pressure reaches preset first pressure value；
Chip is sent on the pedestal by S12, and the heating temperature of the pedestal is preset temperature value；
It is passed through the pretreatment gas in S13, Xiang Suoshu reaction chamber, and the chamber pressure is made to be maintained at preset second pressure
Force value.
4. membrane deposition method according to claim 3, which is characterized in that the value range of the second pressure value exists
50-500mTorr。
5. membrane deposition method according to claim 4, which is characterized in that the value range of the second pressure value exists
150-200mTorr。
6. membrane deposition method according to claim 2, which is characterized in that the process gas includes nitrogen, or packet
Include the mixed gas of argon gas and nitrogen.
7. membrane deposition method according to claim 6, which is characterized in that the value range of the flow of the nitrogen exists
100-500sccm；The value range of the flow of the argon gas is in 100-500sccm；The value range of the flow of the hydrogen exists
10-200sccm。
8. membrane deposition method according to claim 1, which is characterized in that the excitation power supply includes DC power supply and penetrates
Frequency power；
In first deposition step, while the DC power supply and radio-frequency power supply are opened, Xiang Suoshu target applies direct current function
Rate and radio-frequency power；Also, by the ratio for adjusting the dc power and radio-frequency power, to adjust the growth crystalline substance of the film
To.
9. membrane deposition method according to claim 8, which is characterized in that the ratio of the dc power and radio-frequency power
Value range in 1:10-10:1.
10. membrane deposition method according to claim 9, which is characterized in that the ratio of the dc power and radio-frequency power
Example is 1:2 or 2:1.
11. membrane deposition method according to claim 1, which is characterized in that in first deposition step and described
In two deposition steps, the process gas includes the mixed gas of argon gas and nitrogen；
The value range of the flow proportional of the nitrogen and the argon gas is in 1.2-1.5.
12. membrane deposition method according to claim 11, which is characterized in that the value range of the flow of the nitrogen exists
300-500sccm；The value range of the flow of the argon gas is in 200-300sccm.
13. membrane deposition method according to claim 8, which is characterized in that described straight in second deposition step
The value range of the ratio of power and radio-frequency power is flowed in 3:1-6:1.
14. membrane deposition method according to claim 8 or claim 9, which is characterized in that in first deposition step, institute
The value range of dc power is stated in 3-5KW；The value range of the radio-frequency power is in 1-3KW；
In second deposition step, the value range of the dc power is in 15-20KW；The value model of the radio-frequency power
It is trapped among 3-5KW.
15. membrane deposition method according to claim 1, which is characterized in that in second deposition step, pass through tune
The size and membrane stress of resistivity is adjusted in the size for saving the substrate bias power, and the value range of the substrate bias power exists
50-500W。
16. membrane deposition method according to claim 1, which is characterized in that the film is TiAlN thin film, after described
In processing step, the post-treatment gas includes the mixed gas of nitrogen and hydrogen.
17. membrane deposition method according to claim 16, which is characterized in that the value range of the flow of the nitrogen exists
300-500sccm；The value range of the flow of the hydrogen is in 50-200sccm.
18. membrane deposition method according to claim 1, which is characterized in that in first deposition step, described second
In deposition step and the post-processing step, the value range of chamber pressure is in 150-200mTorr.
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| CN111235537A (en) * | 2020-01-16 | 2020-06-05 | 北京北方华创微电子装备有限公司 | Film preparation method |
| CN111286696A (en) * | 2020-03-24 | 2020-06-16 | 北京北方华创微电子装备有限公司 | Preparation method of semiconductor hard mask film |
| CN111778478A (en) * | 2020-07-15 | 2020-10-16 | 北京北方华创微电子装备有限公司 | Thin film deposition method |
| CN112376024A (en) * | 2020-10-26 | 2021-02-19 | 北京北方华创微电子装备有限公司 | Preparation method of oxide film |
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| CN112760602A (en) * | 2020-12-14 | 2021-05-07 | 北京北方华创微电子装备有限公司 | Method for depositing metal nitride film |
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| CN112760602A (en) * | 2020-12-14 | 2021-05-07 | 北京北方华创微电子装备有限公司 | Method for depositing metal nitride film |
| CN113265613A (en) * | 2021-04-28 | 2021-08-17 | 浙江艾微普科技有限公司 | Preparation method and equipment of stress-adjustable reactive sputtering AlN film |
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| CN115161609B (en) * | 2022-07-25 | 2023-09-12 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and magnetron sputtering process |
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