CN104651789A - Preparation process of novel C/Si film - Google Patents
Preparation process of novel C/Si film Download PDFInfo
- Publication number
- CN104651789A CN104651789A CN201410211969.3A CN201410211969A CN104651789A CN 104651789 A CN104651789 A CN 104651789A CN 201410211969 A CN201410211969 A CN 201410211969A CN 104651789 A CN104651789 A CN 104651789A
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- film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation process of a novel C/Si film. The preparation method comprises the following steps: fixing a graphite substrate in a sputtering cavity for magnetron sputtering; with carbon as a target material, sputtering carbon in an argon atmosphere so that carbon is deposited on the surface of the graphite substrate to form a new carbon layer; then, carrying out thermal evaporation on a sample subjected to sputtering so as to form a Si film in a vacuum deposition way, thus forming a C/Si thin film; and finally annealing in a annealing furnace.
Description
Technical field
The present invention relates to a kind of thin film preparation process, particularly the preparation technology of a kind of novel C/Si film.
Background technology
SiC is made up of Si atom and C atom, and its crystalline structure has the feature of homogeneity polytype, and modal at semiconductor applications is have the 3C-SiC of cubic sphalerite structure and 4H-SiC and 6H-SiC of hexagonal wurtzite structure.Be the existing significant progress of microelectromechanical systems (MEMS) of basic material with Si since 21 century, along with the continuous expansion of MEMS Application Areas, the performance limitation of Si material itself constrains the application of Si base MEMS under the extreme conditions such as high temperature, high frequency, severe radiation and chemical corrosion.Therefore the novel equivalent material finding Si comes into one's own just day by day.In numerous semiconductor material, the aspect such as physical strength, thermal property, erosion resistance, wear resistance of SiC has obvious advantage, and with IC process compatible, so extreme condition MEMS application in, become the first-selected equivalent material of Si.
SiC material has good electrology characteristic and mechanical characteristic, is a kind of ideal semiconductor material adapting to many severe environment.Its energy gap is comparatively large, has that thermal conductivity is high, high temperature resistant, anticorrosive, chemical stability high, using it as device architecture material, can obtain high temperature resistant, high pressure resistant and erosion-resisting SiC-MEMS device, have wide market and application prospect.Simultaneously SiC ceramic has that hot strength is large, oxidation-resistance is strong, wearability is good, thermostability is good, thermal expansivity is little, thermal conductivity is large, hardness is high and the good characteristic such as anti-thermal shock and resistance to chemical attack.Therefore, it is one of the most promising current structural ceramics, and be applied, as precision bearing, sealing member, gas-turbine rotor, nozzle, heat exchanger component and nuclear reactor material etc. in many high-tech sectors (as space technology, nuclear physics etc.) and basic industry (as petrochemical complex, machinery, vehicle, shipbuilding etc.).As the miniature motor utilizing multilayer polycrystal carborundum surface micromechanical process to make, can steady operation under the hot environment more than 490 DEG C.But SiC body monocrystalline must at high temperature grow, adulterate restive, existing defects in crystal, particularly microchannel defect cannot be eliminated, and SiC body monocrystalline is very expensive, therefore development low-temperature growth SiC thin film technique is of great importance for the practical application of SiC device.
Summary of the invention
The technical problem to be solved in the present invention is: the preparation technology providing a kind of novel C/Si film, to solve the deficiencies in the prior art.
Technical scheme of the present invention is: the preparation technology of a kind of novel C/Si film, comprise following steps: graphite substrate is fixed in the sputtering chamber of magnetron sputtering, target is carbon target, sputtered carbon in argon atmosphere, make it be deposited on the surface of graphite substrate, form new carbon-coating; Thereafter, the sample after sputtering adopts the method vacuum moulding machine Si film of thermal evaporation, form C/Si film, finally anneal in the lehr.
Described annealing process is: be incubated 2h in 950 DEG C.
The evaporation source of thermal evaporation plated film is purity is 99.99% tungsten boat, and evaporating materials is silicon grain, purity 99.99%, and the target used in magnetron sputtering is carbon target, purity 99.99%, and as working gas is the argon gas of purity 99.99%.
Beneficial effect of the present invention: increase substrate temperature by high temperature annealing, effectively can eliminate unrelieved stress and effectively increase structure and chemical order in film, but have no significant effect film hardness.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is the SEM figure of the sample preparing gained.
Embodiment
Adopt graphite flake to be substrate material in experiment, its purity is 99.99%, size 20mm × 10mm × 2mm.Carry out polishing pre-treatment to graphite substrate before experiment, then clean, its process is as follows:
(1) with #1-#6 sand papering graphite flake surface, smooth surface is kept;
(2) sample of having polished is put into 30% nitric acid and clean 10min, remove the impurity on surface;
(3) taking-up sample is put into acetone and is cleaned 10min, removes the greasy dirt on surface;
(4) take out sample and clean 10min more in ethanol, the organism on surface is dissolved;
(5) sample after process is put into deionized water and is cleaned, and is washed till neutral rear taking-up and dries for subsequent use.
A kind of preparation technology of novel C/Si film, comprise following steps: graphite substrate is fixed in the sputtering chamber of magnetron sputtering, target is carbon target, sputtered carbon in argon atmosphere, makes it be deposited on the surface of graphite substrate, forms new carbon-coating; Thereafter, the sample after sputtering adopts the method vacuum moulding machine Si film of thermal evaporation, form C/Si film, finally anneal in the lehr.
Described annealing process is: be incubated 2h in 950 DEG C.
The evaporation source of thermal evaporation plated film is purity is 99.99% tungsten boat, and evaporating materials is silicon grain, purity 99.99%, and the target used in magnetron sputtering is carbon target, purity 99.99%, and as working gas is the argon gas of purity 99.99%.
Claims (3)
1. a preparation technology for novel C/Si film, is characterized in that: comprise following steps: graphite substrate is fixed in the sputtering chamber of magnetron sputtering, and target is carbon target, sputtered carbon in argon atmosphere, makes it be deposited on the surface of graphite substrate, forms new carbon-coating; Thereafter, the sample after sputtering adopts the method vacuum moulding machine Si film of thermal evaporation, form C/Si film, finally anneal in the lehr.
2. the preparation technology of a kind of novel C/Si film according to claim 1, is characterized in that: described annealing process is: be incubated 2h in 950 DEG C.
3. the preparation technology of a kind of novel C/Si film according to claim 1, it is characterized in that: the evaporation source of thermal evaporation plated film is purity is 99.99% tungsten boat, evaporating materials is silicon grain, purity 99.99%, the target used in magnetron sputtering is carbon target, purity 99.99%, as working gas is the argon gas of purity 99.99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410211969.3A CN104651789A (en) | 2014-05-20 | 2014-05-20 | Preparation process of novel C/Si film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410211969.3A CN104651789A (en) | 2014-05-20 | 2014-05-20 | Preparation process of novel C/Si film |
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| Publication Number | Publication Date |
|---|---|
| CN104651789A true CN104651789A (en) | 2015-05-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410211969.3A Pending CN104651789A (en) | 2014-05-20 | 2014-05-20 | Preparation process of novel C/Si film |
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| CN (1) | CN104651789A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108277466A (en) * | 2018-02-07 | 2018-07-13 | 西南交通大学 | Topological insulator heterojunction structure film Bi2Se3The preparation method of/C |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103030135A (en) * | 2013-01-05 | 2013-04-10 | 航天材料及工艺研究所 | Preparation method of antioxidant high-heat-conductivity foamy carbon material |
| CN103346073A (en) * | 2013-07-13 | 2013-10-09 | 大连理工大学 | Method for preparing beta-silicon carbide film |
-
2014
- 2014-05-20 CN CN201410211969.3A patent/CN104651789A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103030135A (en) * | 2013-01-05 | 2013-04-10 | 航天材料及工艺研究所 | Preparation method of antioxidant high-heat-conductivity foamy carbon material |
| CN103346073A (en) * | 2013-07-13 | 2013-10-09 | 大连理工大学 | Method for preparing beta-silicon carbide film |
Non-Patent Citations (3)
| Title |
|---|
| C.K.CHUNG ET AL.: ""Growth of SiC Nanoparticles in C/Si Mutilayers using Annealing"", 《IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS》 * |
| 徐克尊: "《高等原子分子物理学》", 30 September 2000, 北京：科学出版社 * |
| 薄金涛 等: "《实用热处理手册》", 30 April 2014, 上海科学技术出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108277466A (en) * | 2018-02-07 | 2018-07-13 | 西南交通大学 | Topological insulator heterojunction structure film Bi2Se3The preparation method of/C |
| CN108277466B (en) * | 2018-02-07 | 2019-08-20 | 西南交通大学 | Topological insulator heterojunction structure film Bi2Se3The preparation method of/C |
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Application publication date: 20150527 |