CN104650736A - A chemical-mechanical polishing solution and applications thereof - Google Patents
A chemical-mechanical polishing solution and applications thereof Download PDFInfo
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- CN104650736A CN104650736A CN201310580945.0A CN201310580945A CN104650736A CN 104650736 A CN104650736 A CN 104650736A CN 201310580945 A CN201310580945 A CN 201310580945A CN 104650736 A CN104650736 A CN 104650736A
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- polishing
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- oxysalt
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- 238000005498 polishing Methods 0.000 title claims abstract description 99
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 16
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 11
- 238000005260 corrosion Methods 0.000 claims abstract description 11
- 239000003112 inhibitor Substances 0.000 claims abstract description 10
- 239000008139 complexing agent Substances 0.000 claims abstract description 9
- 239000002270 dispersing agent Substances 0.000 claims abstract description 9
- 239000008367 deionised water Substances 0.000 claims abstract description 7
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 claims description 42
- 239000000126 substance Substances 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 17
- 239000006061 abrasive grain Substances 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 150000007524 organic acids Chemical class 0.000 claims description 4
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 3
- 239000005695 Ammonium acetate Substances 0.000 claims description 3
- 239000004160 Ammonium persulphate Substances 0.000 claims description 3
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 3
- 229940043376 ammonium acetate Drugs 0.000 claims description 3
- 235000019257 ammonium acetate Nutrition 0.000 claims description 3
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 3
- 235000019395 ammonium persulphate Nutrition 0.000 claims description 3
- -1 oxysalt Substances 0.000 claims description 3
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 3
- 239000001230 potassium iodate Substances 0.000 claims description 3
- 229940093930 potassium iodate Drugs 0.000 claims description 3
- 235000006666 potassium iodate Nutrition 0.000 claims description 3
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 claims description 2
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-N L-arginine Chemical compound OC(=O)[C@@H](N)CCCN=C(N)N ODKSFYDXXFIFQN-BYPYZUCNSA-N 0.000 claims description 2
- 229930064664 L-arginine Natural products 0.000 claims description 2
- 235000014852 L-arginine Nutrition 0.000 claims description 2
- 239000004153 Potassium bromate Substances 0.000 claims description 2
- 239000004159 Potassium persulphate Substances 0.000 claims description 2
- 229920002125 Sokalan® Polymers 0.000 claims description 2
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 2
- 150000004027 organic amino compounds Chemical class 0.000 claims description 2
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 239000004584 polyacrylic acid Substances 0.000 claims description 2
- 235000019396 potassium bromate Nutrition 0.000 claims description 2
- 229940094037 potassium bromate Drugs 0.000 claims description 2
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 2
- 235000019394 potassium persulphate Nutrition 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 13
- 229910052719 titanium Inorganic materials 0.000 abstract description 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 10
- 230000004888 barrier function Effects 0.000 abstract description 10
- 239000007787 solid Substances 0.000 abstract description 8
- 239000002245 particle Substances 0.000 abstract description 7
- 239000003795 chemical substances by application Substances 0.000 abstract description 3
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 19
- 239000010936 titanium Substances 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemical-mechanical polishing solution used for polishing barrier layers. The polishing solution comprises abrasive particles, oxysalt, a complexing agent, an organic dispersing agent, a corrosion inhibitor, a pH conditioning agent and deionized water. The polishing solution is characterized in that: the polishing solution has adjustable TEOS and Cu polishing speeds under a low cerium oxide solid content, and the polishing solution shows high Ta and Ti polishing and removing speeds especially under the synergistic effect of the oxysalt.
Description
Technical field
The invention discloses a kind of chemical mechanical polishing liquid for barrier polishing and application thereof.
Background technology
Along with unicircuit is towards the development in the integrated direction of height, copper instead of aluminium gradually as interconnecting material, and this mainly has relatively low resistivity, high deelectric transferred energy rate and short RC time of lag due to copper, effectively can improve the yield rate of chip, reduce the number of plies of wiring, shorten process period.But copper is easy to be dissolved in many dielectric materialss, therefore need diffusion impervious layer to prevent copper diffuse into below dielectric materials in, Conventional barrier layer material comprises titanium, titanium nitride, tantalum, tantalum nitride etc.
Chemical-mechanical planarization (CMP) technology is that low cost manufactures the method for flat substrate surfaces the most reliably at present, it carries out usually in two steps: the first step removes copper fast by special formulation polishing fluid, after removal copper, second step removes the blocking layer below copper.Research for titanium, tantalum barrier layer polishing fluid is reported mainly based on colloidal sol silica abrasive system, such polishing fluid is by obtaining higher blocking layer Ti, Ta polishing speed and adjustable Cu polishing speed to the adjustment of formula, but in order to obtain high TEOS polishing speed, need higher solid content, this not only adds cost, also there is the risk of blocked pipeline.
Cerium oxide abrasives has high TEOS polishing speed, is subject to extensive concern in the industry.On the other hand, cerium oxide self has higher oxidation characteristic, and therefore it demonstrates the application characteristic of many uniquenesses to the polishing of metal medium.Patent CN200710172713.6 relates to a kind of chemical mechanical polishing liquid of barrier polishing, the abrasive related in that patent comprises cerium oxide, but polishing fluid is applied to acid system described in this patent, relating in Cu polishing process, easily cause the generation of the problems such as corrosion.Patent CN200880021284.5 relates to the alkaline system chemical mechanical polishing liquid of barrier polishing, and abrasive comprises cerium oxide, but in the invention, the matching relationship between not mentioned cerium oxide abrasives and formula chemical reagent and performance.Patent 200710172711.7 discloses a kind of polishing fluid improving edge transition burn into projection and crenellated phenomena in barrier polishing process, but polishing fluid is only applicable to acid system described in this patent, if pH is within the scope of 2-5, therefore, in specific implementation process, metal is easily caused to cave in (dishing) as the butterfly of Cu and corrode the generation of (erosion).The invention discloses a kind of alkaline system chemical mechanical polishing liquid for barrier polishing, it comprises abrasive grains, oxysalt, complexing agent, organic dispersing agent, corrosion inhibitor, pH adjusting agent and deionized water, and polishing fluid is alkalescence.The feature of this polishing fluid is to have adjustable TEOS and Cu polishing speed under lower cerium oxide solid content condition, particularly under the synergy of described oxysalt, demonstrates higher Ta and Ti polish removal rate.
Summary of the invention
The object of the invention is to solve the deficiency that TEOS polishing speed that existing barrier polishing solution in the market exists in low-solid content situation is lower, a kind of chemical mechanical polishing liquid for Ti, Ta barrier polishing is provided, blocking layer of the present invention chemical mechanical polishing liquid is adjustable to TEOS and Cu polishing speed at lower solid content, has high Ta and Ti polish removal rate simultaneously.
Chemical mechanical polishing slurry of the present invention comprises abrasive grains, oxysalt, complexing agent, organic dispersing agent, corrosion inhibitor and deionized water.In the present invention, the median size of cerium oxide is 120-200 nanometer, and described average grain size is 20-60 nanometer, and the concentration of abrasive grains is 0.25-1.0wt%.
In the present invention, one or more organic dispersing agents contained are mainly polyacrylate, and be preferably polyacrylic acid, its molecular weight is 3000-5000, and its concentration in polishing fluid is 0.001%-0.25%.
In the present invention, oxysalt be selected from potassium bromate, Potassium Iodate, ammonium persulphate and Potassium Persulphate one or more, be preferably ammonium persulphate and/or Potassium Iodate, the concentration of oxysalt is 0.05-2.0wt% preferred concentration is 0.1-0.5wt%.
In the present invention, complexing agent be selected from organic acid or aminocompound one or more, organic acid can be one or more in L-arginine, Padil, citric acid and acetic acid, is preferably Padil; Aminocompound is one or more in ammonium hydroxide, ammonium acetate, quadrol, is preferably ammonium acetate.
In the present invention, the concentration of complexing agent is 0.01-1wt%, and preferred concentration is 0.05-0.25wt%.
In the present invention, corrosion inhibitor is benzotriazole compounds, is preferably benzotriazole and/or amino-1,2, the 4-triazole of 3-.
In the present invention, the concentration of described corrosion inhibitor is 0.01-0.2wt%, and preferred concentration range is 0.05-0.1wt%.
In the present invention, also can contain pH value regulator further, specifically can be KOH or H
2sO
4, the pH value range of polishing fluid is 9.0-11.0, and preferred pH value range is 9.5-10.5.
Carrier of the present invention is deionized water.
Agents useful for same of the present invention and raw material are all commercially.
Mentioned reagent concentration is in the slurry mass percent.
Positive progressive effect of the present invention is: described polishing fluid, under lower cerium oxide solid content condition, have adjustable TEOS and Cu polishing speed, particularly under the synergy of described oxysalt, demonstrates higher Ta and Ti polish removal rate.
Embodiment
Agents useful for same of the present invention and raw material are all commercially.Polishing fluid of the present invention can be obtained by the simple Homogeneous phase mixing of mentioned component.
Be described in detail chemical mechanical polishing liquid of the present invention below by specific embodiment, to make better to understand the present invention, but following embodiment does not limit the scope of the invention.In embodiment, each percentage composition is mass percent.
Preparation embodiment
Table 1 gives chemical mechanical polishing liquid Example formulations of the present invention, and table 2 and 3 gives chemical mechanical polishing liquid comparative example of the present invention formula.The following stated percentage composition is mass percentage content.In formula, chemical reagent used is market buying.The cerium oxide particle used in polishing fluid is the aqueous dispersions of original concentration 10wt% to 20wt%, and the particle diameter of particle is on average to amount to diameter, and its median size is measured by the Nano-ZS90 laser particle size analyzer of Malvern company; The grain fineness number of the cerium oxide particle used in polishing fluid is measured by Japanese Shimadzu LabX XRD-6100 type X-ray diffractometer.First organic dispersing agent is added in original concentration cerium oxide dispersion and mix, again by the component except abrasive grains according to content listed in table, mix in deionized water, required pH value is adjusted to KOH, then the dispersion of abrasive particles of organic dispersing agent dispersion is added, if pH declines, be adjusted to required pH value with KOH, and supply percentage composition to 100wt% with deionized water, can chemical mechanical polishing liquid be obtained.
Table 1 chemical mechanical polishing liquid Example formulations of the present invention
Table 2 chemical mechanical polishing liquid embodiment of the present invention comparative example
Table 3 chemical mechanical polishing liquid embodiment of the present invention comparative example
Effect example
With the chemical mechanical polishing slurry of polishing fluid 1-10 and comparative example 1-10 in above-described embodiment, polishing is carried out to blank Cu wafer respectively, polishing condition is identical, burnishing parameters is as follows: Logitech polishing pad, downward pressure 3psi, rotary speed/rubbing head rotating speed=60/80rpm, polishing time 60s, chemical machinery throws flow rate of slurry 100mL/min.Polishing wafer coupons used forms by commercially available (such as U.S. SVTC company produces) 8 inches of plated film wafer coupons.The RT-7O/RG-7B tester that in Cu, Ti and Ta wafer coupons that polishing is used, Cu, Ti and Ta layer thickness is produced by NAPSON company records, and the NANO SPEC6100 tester that TEOS NANO Matrics company produces records.Namely obtain the removal speed of Cu, Ti and Ta divided by polishing consumes time by the thickness difference recorded before and after polishing.Polishing time is 1 minute.
The experimental technique of unreceipted actual conditions in embodiment, usually conveniently condition, or according to the condition that manufacturer advises.
In table 4 and table 5, the polishing effect of polishing fluid embodiment 1-10 of the present invention and comparative example 1-10 is compared and show, in embodiment 1-10, corresponding cerium oxide abrasives is under described oxysalt and other function ingredients synergy, under relatively low solid content condition, there is relatively higher, adjustable TEOS and Cu polishing speed, obtain the polishing speed of higher Ti and Ta simultaneously.Do not add oxysalt of the present invention in comparative example 1-6, the polishing speed of Cu, Ti and Ta obviously reduces.Be abrasive with silicon-dioxide in comparative example 7-10, polish results shows, although increased substantially polishing fluid silicon oxide solid content, the polishing speed of TEOS is still lower.
Table 4 chemical mechanical polishing liquid embodiment of the present invention polish results compares
Table 5 chemical mechanical polishing liquid comparative example of the present invention polish results compares
Be described in detail specific embodiments of the invention above, but it is just as example, the present invention is not restricted to specific embodiment described above.To those skilled in the art, any equivalent modifications that the present invention is carried out and substituting also all among category of the present invention.Therefore, equalization conversion done without departing from the spirit and scope of the invention and amendment, all should contain within the scope of the invention.
Claims (23)
1. a chemical mechanical polishing liquid, it comprises abrasive grains, oxysalt, complexing agent, organic dispersing agent, corrosion inhibitor and deionized water.
2. polishing fluid according to claim 1, is characterized in that: described abrasive grains is cerium oxide.
3. polishing fluid according to claim 2, is characterized in that: the median size of described cerium oxide is 120-200 nanometer.
4. polishing fluid according to claim 2, is characterized in that: the average grain size of described cerium oxide is 20-60 nanometer.
5. polishing fluid according to claim 1, is characterized in that: described abrasive grains concentration is 0.25-1.0wt%.
6. polishing fluid according to claim 1, is characterized in that: the concentration of described organic dispersing agent is 0.001%-0.25%.
7. polishing fluid according to claim 1, is characterized in that: described organic dispersing agent is polyacrylic acid, and its molecular weight is 3000-5000.
8. polishing fluid according to claim 1, is characterized in that: described oxysalt be selected from potassium bromate, Potassium Iodate, ammonium persulphate and Potassium Persulphate one or more.
9. polishing fluid according to claim 1, is characterized in that: the concentration of described oxysalt is 0.05-2.0wt%.
10. polishing fluid according to claim 9, is characterized in that: the concentration of described oxysalt is 0.1-0.5wt%.
11. polishing fluids according to claim 1, is characterized in that: described complexing agent be selected from organic acid or aminocompound one or more.
12. polishing fluids according to claim 11, is characterized in that: described organic acid is L-arginine, Padil, citric acid and acetic acid.
13. polishing fluids according to claim 11, is characterized in that: described aminocompound is ammonium hydroxide, ammonium acetate, quadrol.
14. polishing fluids according to claim 1, is characterized in that: the concentration of described complexing agent is 0.01-1wt%.
15. polishing fluids according to claim 14, is characterized in that: the concentration of described complexing agent is 0.05-0.25wt%.
16. polishing fluids according to claim 1, is characterized in that: described corrosion inhibitor is benzotriazole compounds.
17. polishing fluids according to claim 16, is characterized in that: described corrosion inhibitor is amino-1,2, the 4-triazole of benzotriazole and/or 3-.
18. polishing fluids according to claim 1, is characterized in that: the concentration of described corrosion inhibitor is 0.01-0.2wt%.
19. polishing fluids according to claim 18, is characterized in that: the concentration of described corrosion inhibitor is 0.05-0.1wt%.
20. polishing fluids according to claim 1, is characterized in that: described polishing fluid also comprises pH value regulator, and wherein, described pH adjusting agent is KOH or H
2sO
4.
21. polishing fluids according to claim 1, is characterized in that: the pH value of described polishing fluid is 9.0-11.0.
22. polishing fluids according to claim 21, is characterized in that: the pH value of described polishing fluid is 9.5-10.5.
23. 1 kinds of polishing fluid as claimed in claim 1 application in polish stop.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310580945.0A CN104650736A (en) | 2013-11-18 | 2013-11-18 | A chemical-mechanical polishing solution and applications thereof |
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|---|---|---|---|
| CN201310580945.0A CN104650736A (en) | 2013-11-18 | 2013-11-18 | A chemical-mechanical polishing solution and applications thereof |
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| CN104650736A true CN104650736A (en) | 2015-05-27 |
Family
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| CN201310580945.0A Pending CN104650736A (en) | 2013-11-18 | 2013-11-18 | A chemical-mechanical polishing solution and applications thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726028A (en) * | 2013-12-18 | 2015-06-24 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and use method thereof |
| CN106112791A (en) * | 2016-07-01 | 2016-11-16 | 大连理工常州研究院有限公司 | Titanium alloy grinds and cmp method |
| CN114525512A (en) * | 2022-01-25 | 2022-05-24 | 深圳市拍档科技有限公司 | Recyclable titanium alloy mirror polishing solution and preparation method thereof |
| WO2023116867A1 (en) * | 2021-12-23 | 2023-06-29 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing slurry and usage method therefor |
-
2013
- 2013-11-18 CN CN201310580945.0A patent/CN104650736A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726028A (en) * | 2013-12-18 | 2015-06-24 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and use method thereof |
| CN106112791A (en) * | 2016-07-01 | 2016-11-16 | 大连理工常州研究院有限公司 | Titanium alloy grinds and cmp method |
| WO2023116867A1 (en) * | 2021-12-23 | 2023-06-29 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing slurry and usage method therefor |
| CN114525512A (en) * | 2022-01-25 | 2022-05-24 | 深圳市拍档科技有限公司 | Recyclable titanium alloy mirror polishing solution and preparation method thereof |
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Application publication date: 20150527 |