CN104637969B - Image sensor with a plurality of pixels - Google Patents
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- CN104637969B CN104637969B CN201510081042.7A CN201510081042A CN104637969B CN 104637969 B CN104637969 B CN 104637969B CN 201510081042 A CN201510081042 A CN 201510081042A CN 104637969 B CN104637969 B CN 104637969B
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Abstract
The present invention provides an image sensor including: a device layer having opposing first and second faces, incident light entering the device layer from the first face; a dielectric layer on the second side of the device layer, the dielectric layer having high reflective properties. According to the image sensor, the medium layer with high reflection characteristic reflects the light transmitted from the device layer back to the device layer, so that the light is absorbed by the photosensitive device again, the absorption efficiency and the photosensitive sensitivity of long-wavelength light are improved, the image sensor is particularly favorable for a large-pixel monitoring device which wants to fully utilize the long-wavelength light to collect images, the chance that the transmitted light is reflected to other pixels is reduced, the signal crosstalk between adjacent pixels is reduced, and the imaging effect of the image sensor is improved.
Description
Technical Field
The present invention relates to an image sensor.
Background
Fig. 1 shows a structure of a conventional front-illuminated image sensor, as shown by a dotted line with an arrow in the figure, incident light is converged by a microlens layer and filtered by a filter film layer, then passes through a metal interconnection layer 104 and then enters a device layer 100, and is absorbed by a photosensitive device 103 (e.g., a photodiode) in the device layer 100, converted into an electrical signal, and led out by a circuit formed by the metal interconnection layer 104. Due to the shielding of the metal interconnection layer 104, part of the light is reflected or absorbed in the metal interconnection layer 104, which causes the loss of incident light, reduces the photosensitive quantity of the photosensitive device 103, and further affects the imaging effect of the image sensor.
For this reason, as shown in fig. 2, incident light is converged by the microlens layer and filtered by the filter layer, and then directly enters the device layer 200 to be absorbed by the photosensitive device 203, so that the incident light is not affected by light blocking of the metal interconnection layer 204, loss of incident light is reduced, the photosensitive quantity of the photosensitive device 203 is increased, and the imaging effect under a low-light condition is significantly improved. However, since the thickness of the device layer 200 is usually small (2-3 μm), some long wavelength light cannot be sufficiently absorbed, and the photosensitivity of the long wavelength light is low, and the part of the long wavelength light which is not absorbed is reflected back to the device layer 200 in the metal interconnection layer 204 after penetrating through the device layer 200, due to the process limitation, a gap inevitably exists between the metal interconnection layer 204 and the device layer 200, and the direction of the reflected light is difficult to control, so that the light easily enters the photosensitive device 203 of an adjacent pixel, and the crosstalk of signals between the adjacent pixels is caused, and finally the image sharpness is reduced, and the quality is deteriorated.
Disclosure of Invention
The invention aims to provide an image sensor, which is used for improving the photosensitive sensitivity of long-wavelength light, reducing signal crosstalk between adjacent pixels and improving the imaging effect of the image sensor.
In order to solve the problems, the invention adopts the following technical scheme:
an image sensor, comprising: a device layer having opposing first and second faces, incident light entering the device layer from the first face; a dielectric layer on the second side of the device layer, the dielectric layer having high reflective properties.
Preferably, the dielectric layer abuts the second side of the device layer.
Preferably, the dielectric layers include first dielectric layers and second dielectric layers having different refractive indexes and alternately stacked, wherein each dielectric layer has a thickness equal to (2j +1)/4 times a wavelength of incident light in the dielectric layer, j =0,1,2 ….
Preferably, the refractive index of the first dielectric layer is greater than that of the second dielectric layer, and the number of layers of the first dielectric layer is 1 more than that of the second dielectric layer.
Preferably, the first dielectric layer is a silicon nitride layer, and the second dielectric layer is a silicon oxide layer.
Preferably, the first dielectric layer is a silicon oxynitride layer, and the second dielectric layer is a silicon oxide layer.
Preferably, the total number of the first dielectric layer and the second dielectric layer is an odd number of layers.
Preferably, the dielectric layer has a reflectivity of at least 90%.
Preferably, the image sensor further comprises a metal interconnect layer on the second side of the device layer.
Preferably, the image sensor further comprises a metal interconnect layer on the first side of the device layer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
according to the image sensor, the medium layer with high reflection characteristic reflects the light transmitted from the device layer back to the device layer, so that the light is absorbed by the photosensitive device again, the absorption efficiency and the photosensitive sensitivity of long-wavelength light are improved, the image sensor is particularly favorable for a large-pixel monitoring device which wants to fully utilize the long-wavelength light to collect images, the chance that the transmitted light is reflected to other pixels is reduced, the signal crosstalk between adjacent pixels is reduced, and the imaging effect of the image sensor is improved.
Drawings
Other features and advantages of the present invention will be apparent from, or are set forth in more detail in, the accompanying drawings, which together with the description serve to explain certain principles of the invention. Wherein:
FIG. 1 is a schematic diagram of a front-illuminated image sensor of the prior art;
FIG. 2 is a schematic diagram of a prior art backside illuminated image sensor;
FIG. 3 is a schematic structural diagram of an image sensor according to a first embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an intermediate layer in an image sensor according to a first embodiment of the present invention;
FIG. 5 is a graph illustrating the relationship between the total number of dielectric layers and the reflectivity of an image sensor according to a first embodiment of the present invention;
FIG. 6 is a schematic structural diagram of an image sensor according to a second embodiment of the present invention;
FIG. 7 is a schematic structural diagram of an image sensor according to a third embodiment of the present invention;
fig. 8 is a schematic structural diagram of an image sensor according to a fourth embodiment of the invention.
Detailed Description
In order to solve the above technical problems, the present invention provides an image sensor, in which light transmitted from a device layer is reflected back to the device layer through a dielectric layer having a high reflection characteristic, and is absorbed by a photosensitive device again, so that the absorption efficiency and the photosensitive sensitivity of long-wavelength light are improved, which is particularly advantageous for a large-pixel monitoring device that wants to fully utilize long-wavelength light for image acquisition, and at the same time, the chance of reflecting transmitted light to other pixels is reduced, thereby reducing signal crosstalk between adjacent pixels and improving the imaging effect of the image sensor.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 3 shows an image sensor according to a first embodiment of the present invention. The image sensor of the present embodiment is a back-illuminated image sensor, which includes a device layer 300, in which a plurality of photosensitive devices 303 are formed in the device layer 300, and three photosensitive devices 303 are illustrated in the figure. The device layer 300 has opposing first and second sides 301, 302, incident light entering the device layer 300 from the first side 301, and a metal interconnect layer 304 located on the second side 302 of the device layer 300.
Unlike the conventional back-illuminated image sensor, the back-illuminated image sensor of the present embodiment further includes a dielectric layer 305 on the second side 302 of the device layer 300, and the dielectric layer 305 covers the entire second side 302 of the device layer 300. Since the dielectric layer 305 has a high reflection characteristic, light transmitted from the device layer 300 can be reflected back to the device layer 300 and absorbed by the photosensitive device 303 again, so that the absorption efficiency and photosensitive sensitivity of long-wavelength light are improved, which is particularly advantageous for a large-pixel monitoring device which wants to fully utilize long-wavelength light for image acquisition, and meanwhile, the chance of reflecting transmitted light to other pixels is reduced, so that the signal crosstalk between adjacent pixels is reduced, and the imaging effect of the image sensor is improved.
The method for manufacturing the back side illumination image sensor in the embodiment at least comprises the following steps:
forming a photosensitive device 303 in a device layer (device wafer) 300;
forming a dielectric layer 305 with high reflection characteristics on the second side 302 of the device layer 300, wherein the dielectric layer 305 covers the whole second side 302 of the device layer 300;
forming a metal interconnection layer 304 on the dielectric layer 305;
bonding with a support wafer 306 from the second side 302 of the device layer 300;
thinned from the first side 301 of the device layer 300;
a filter film layer and a microlens layer are formed on the first side 301 of the device layer 300.
Preferably, dielectric layer 305 is disposed adjacent to second side 302 of device layer 300. For example, after forming the photo-sensing devices 303 in the device layer 300, a dielectric layer 305 with high reflective properties is deposited directly on the second side 302 of the device 300, so that light transmitted through a certain photo-sensing device 303 (e.g., the right-most photo-sensing device 303 in fig. 3) is immediately reflected back into the photo-sensing device 303 by the dielectric layer 305, reducing the chance of the transmitted light being reflected to other pixels.
Preferably, the dielectric layer 305 has a structure as shown in fig. 4, which includes a first dielectric layer a and a second dielectric layer B having different refractive indexes and alternately stacked, such as alternately stacked silicon nitride layers and silicon oxide layers, or alternately stacked silicon oxynitride layers and silicon oxide layers, which may be alternately deposited using CVD (chemical vapor deposition). Wherein the thickness Dx of each dielectric layer is equal to (2j +1)/4 times the wavelength of the incident light in that dielectric layer, j =0,1,2 …. Such a set of all-dielectric multilayer films can achieve a very high reflectivity, depending on the refractive properties of the light, so that most of the light transmitted out of the device layer is reflected back into the device layer.
Taking the first dielectric layer A as a silicon nitride layer, the second dielectric layer B as a silicon oxide layer, and the incident light as green light, the refractive index of the green light in the silicon nitride layer is nA=2.0, refractive index n in the silicon oxide layerBAnd =1.46, the relationship between the total number of dielectric layers and the reflectivity obtained by simulation calculation is shown in table 1 and fig. 5. When the total number of layers is an odd number of layers, the number of layers of the silicon nitride layer having a higher reflectance is 1 more than the number of layers of the silicon oxide layer having a lower reflectance. As can be seen from the data in table 1 and fig. 5, the reflectance is significantly higher when the total number of layers is odd than when the total number of layers is even. In particular, when the total number of layers is an odd number of layers of 13 or more, the reflectance of the dielectric layer is at least 90% or more.
TABLE 1
| Total number of layers | Reflectivity of |
| 1 | 4.60% |
| 2 | 13.00% |
| 3 | 17.90% |
| 4 | 3.90% |
| 5 | 42% |
| 6 | 15% |
| 7 | 64.20% |
| 8 | 38.30% |
| 9 | 78.30% |
| 10 | 59.40% |
| 11 | 88.60% |
| 12 | 76.50% |
| 13 | 93.80% |
| 14 | 87.30% |
| 15 | 96.40% |
| 16 | 92.70% |
| 17 | 98.30% |
| 18 | 96.30% |
| 19 | 98.90% |
| 20 | 97.80% |
Fig. 6 shows an image sensor according to a second embodiment of the present invention. The image sensor of the present embodiment is also a back-illuminated image sensor, which includes a device layer 400, in which a plurality of photosensitive devices 403 are formed in the device layer 400, and three photosensitive devices 403 are illustrated in the figure. The device layer 400 has opposing first 401 and second 402 sides, the incident light entering the device layer 400 from the first side 401, and a metal interconnect layer 404 on the second side 402 of the device layer 400.
As with the first embodiment, the back-illuminated image sensor of this embodiment also includes a dielectric layer 405 on the second side 402 of the device layer 400. Unlike the first embodiment, the dielectric layer 405 in this embodiment does not cover the entire second side 402 of the device layer 400, but only covers a partial region of the second side 402 corresponding to the photosensitive device 403. Because the dielectric layer 405 has a high reflection characteristic, light transmitted from the device layer 400 can be reflected back to the device layer 400 and absorbed by the photosensitive device 403 again, so that the absorption efficiency and photosensitive sensitivity of long-wavelength light are improved, which is particularly advantageous for a large-pixel monitoring device which wants to fully utilize the long-wavelength light for image acquisition, and meanwhile, the chance of reflecting the transmitted light to other pixels is reduced, so that the signal crosstalk between adjacent pixels is reduced, and the imaging effect of the image sensor is improved.
The method for manufacturing the back side illumination image sensor in the embodiment at least comprises the following steps:
forming a photosensitive device 403 in a device layer (device wafer) 400;
forming a dielectric layer 405 with high reflection characteristics on the second surface 402 of the device layer 400, wherein the dielectric layer 405 covers a partial area of the second surface 402 corresponding to the photosensitive device 403;
forming a metal interconnection layer 404 on the dielectric layer 405;
bonded to the support wafer 406 from the second side 402 of the device layer 400;
thinned from the first side 401 of the device layer 400;
a filter film layer and a microlens layer are formed on the first side 401 of the device layer 400.
Preferably, dielectric layer 405 is disposed adjacent to second side 402 of device layer 400. For example, after forming the photosensitive devices 403 in the device layer 400, a dielectric layer 405 with high reflective characteristics is deposited directly on the entire second side 402 of the device 400, the dielectric layer 405 is etched to remove the partial regions not corresponding to the photosensitive devices 403, the dielectric layer 405 is remained on the partial regions corresponding to the photosensitive devices 403, or covering a partial region not corresponding to the photosensitive device 403 with a photoresist or a mask, depositing a dielectric layer 405 with high reflective property only on the partial region corresponding to the photosensitive device 403, thereby forming a structure in which the dielectric layer 405 adjoins a partial region of the second face 402 corresponding to the photosensitive device 403, so that light transmitted through one of the photo-sensing devices 403 (e.g., the rightmost photo-sensing device 403 in fig. 6) is immediately reflected back into that photo-sensing device 403 by the dielectric layer 405, reducing the chance that transmitted light will be reflected to other pixels.
Preferably, the dielectric layer 405 includes first dielectric layers a and second dielectric layers B having different refractive indexes and alternately stacked, for example, alternately stacked silicon nitride layers and silicon oxide layers, or alternately stacked silicon oxynitride layers and silicon oxide layers, which may be alternately deposited using CVD (chemical vapor deposition). Wherein the thickness Dx of each dielectric layer is equal to (2j +1)/4 times the wavelength of the incident light in that dielectric layer, j =0,1,2 …. Such a set of all-dielectric multilayer films can achieve a very high reflectivity, depending on the refractive properties of the light, so that most of the light transmitted out of the device layer is reflected back into the device layer.
Fig. 7 illustrates an image sensor according to a third embodiment of the present invention. The image sensor of the present embodiment is also a back-illuminated image sensor, which includes a device layer 500, in which a plurality of photosensitive devices 503 are formed in the device layer 500, and three photosensitive devices 503 are illustrated in the figure. The device layer 500 has opposing first and second sides 501, 502, with incident light entering the device layer 500 from the first side 501 and a metal interconnect layer 504 located on the second side 502 of the device layer 500.
The back side illuminated image sensor of this embodiment further includes a dielectric layer 505 on the second side 502 of the device layer 500, the dielectric layer 505 covering the entire second side 502 of the device layer 500. In other embodiments not shown, the dielectric layer 505 may cover only a partial region of the second surface 502 corresponding to the photosensitive device 503. Because the dielectric layer 505 has high reflection characteristics, light transmitted from the device layer 500 can be reflected back to the device layer 500 and absorbed by the photosensitive device 503 again, so that the absorption efficiency and photosensitive sensitivity of long-wavelength light are improved, which is particularly beneficial for a large-pixel monitoring device which wants to fully utilize the long-wavelength light to collect images, and meanwhile, the chance of reflecting the transmitted light to other pixels is reduced, so that the signal crosstalk between adjacent pixels is reduced, and the imaging effect of the image sensor is improved.
Unlike the first and second embodiments, the metal interconnection layer 504 in this embodiment is not located behind the dielectric layer 505 (i.e., on the side away from the device layer 500), but is located in the dielectric layer 505, and the dielectric layer 505 plays a role of isolating multiple layers of metal in the metal interconnection layer 504 while reflecting light transmitted from the device layer 500 back to the device layer 500.
The method for manufacturing the back side illumination image sensor in the embodiment at least comprises the following steps:
forming a photosensitive device 503 in a device layer (device wafer) 500;
forming a dielectric layer 505 with high reflection characteristics on the second surface 502 of the device layer 500, wherein a metal interconnection layer 504 is formed in the dielectric layer 505;
bonded to a support wafer 506 from the second side 502 of the device layer 500;
thinned from the first side 501 of the device layer 500;
a filter film layer and a microlens layer are formed on the first side 501 of the device layer 500.
Preferably, the dielectric layer 505 is disposed adjacent to the second side 502 of the device layer 500, as described in the first and second embodiments, so that light transmitted through a photosensitive device 503 (e.g., the rightmost photosensitive device 503 in fig. 7) is immediately reflected back into the photosensitive device 503 by the dielectric layer 505, thereby reducing the chance of the transmitted light being reflected to other pixels.
Preferably, the dielectric layer 505 includes a first dielectric layer a and a second dielectric layer B having different refractive indexes and alternately stacked, for example, alternately stacked silicon nitride layers and silicon oxide layers, or alternately stacked silicon oxynitride layers and silicon oxide layers, which may be alternately deposited using CVD (chemical vapor deposition). Wherein the thickness Dx of each dielectric layer is equal to (2j +1)/4 times the wavelength of the incident light in that dielectric layer, j =0,1,2 …. Such a set of all-dielectric multilayer films can achieve a very high reflectivity, depending on the refractive properties of the light, so that most of the light transmitted out of the device layer is reflected back into the device layer.
Fig. 8 illustrates an image sensor according to a fourth embodiment of the present invention. The image sensor of the present embodiment is a front type image sensor, which includes a device layer 600, a plurality of photosensitive devices 603 formed in the device layer 600, and three photosensitive devices 603 are illustrated in the figure. The device layer 600 has opposing first and second sides 601, 602, incident light entering the device layer 600 from the first side 601, and a metal interconnect layer 604 located on the first side 601 of the device layer 600.
Unlike the conventional front-illuminated image sensor, the front-illuminated image sensor of the present embodiment further includes a dielectric layer 605 on the second side 602 of the device layer 600, and the dielectric layer 605 covers the entire second side 602 of the device layer 600. In other embodiments not shown, the dielectric layer 605 may cover only a partial region of the second side 602 corresponding to the photosensitive device 603. Because the dielectric layer 605 has a high reflection characteristic, light transmitted from the device layer 600 can be reflected back to the device layer 600 and absorbed by the photosensitive device 603 again, so that the absorption efficiency and the photosensitive sensitivity of long-wavelength light are improved, which is particularly beneficial for a large-pixel monitoring device which wants to fully utilize the long-wavelength light for image acquisition, and meanwhile, the chance of reflecting the transmitted light to other pixels is reduced, so that the signal crosstalk between adjacent pixels is reduced, and the imaging effect of the image sensor is improved.
The method for manufacturing the front-illuminated image sensor in the embodiment at least comprises the following steps:
forming a dielectric layer 605 with high reflection characteristics on the support wafer 606;
bonding to a second side 602 of the device layer (device wafer) 600 from the side with the dielectric layer 605;
thinned from the first side 601 of the device layer 600;
forming a photosensitive device 603 in the device layer 600;
forming a metal interconnect layer 604 on the first side 601 of the device layer 600;
a filter film layer and a microlens layer are formed on the metal interconnection layer 604.
Preferably, the dielectric layer 605 is disposed adjacent to the second side 602 of the device layer 600, as described in the first and second embodiments, so that light transmitted through a photosensitive device 603 (e.g., the rightmost photosensitive device 603 in fig. 8) is immediately reflected back into the photosensitive device 603 by the dielectric layer 605, thereby reducing the chance of the transmitted light being reflected to other pixels.
Preferably, the dielectric layer 605 includes a first dielectric layer a and a second dielectric layer B having different refractive indexes and alternately stacked, for example, alternately stacked silicon nitride layers and silicon oxide layers, or alternately stacked silicon oxynitride layers and silicon oxide layers, which may be alternately deposited using CVD (chemical vapor deposition). Wherein the thickness Dx of each dielectric layer is equal to (2j +1)/4 times the wavelength of the incident light in that dielectric layer, j =0,1,2 …. Such a set of all-dielectric multilayer films can achieve a very high reflectivity, depending on the refractive properties of the light, so that most of the light transmitted out of the device layer is reflected back into the device layer.
The above embodiments are provided to illustrate the principle of the present invention and its efficacy, but the present invention is not limited to the above embodiments. Those skilled in the art will recognize that changes may be made in the above embodiments without departing from the spirit and scope of the invention, which is set forth in the following claims. Therefore, the scope of the present invention should be covered by the appended claims.
Claims (5)
1. An image sensor, comprising:
a device layer having opposing first and second faces, incident light entering the device layer from the first face;
a dielectric layer on the second side of the device layer, the dielectric layer having high reflective properties, the dielectric layer abutting the second side of the device layer and covering the entire second side of the device layer;
the dielectric layers comprise a first dielectric layer and a second dielectric layer which have different refractive indexes and are alternately stacked, wherein the thickness of each dielectric layer is equal to (2j +1)/4 times of the wavelength of incident light in the dielectric layer, j is 0,1,2 …, and the reflectivity of the dielectric layers is at least 90%;
the metal interconnection layer is positioned in the dielectric layer.
2. The image sensor of claim 1, wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer, and a number of layers of the first dielectric layer is 1 more than a number of layers of the second dielectric layer.
3. The image sensor of claim 1, wherein the first dielectric layer is a silicon nitride layer and the second dielectric layer is a silicon oxide layer.
4. The image sensor of claim 1, wherein the first dielectric layer is a silicon oxynitride layer and the second dielectric layer is a silicon oxide layer.
5. The image sensor of claim 1, wherein the total number of layers of the first dielectric layer and the second dielectric layer is an odd number of layers.
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| CN107680980A (en) * | 2017-09-29 | 2018-02-09 | 德淮半导体有限公司 | Imaging sensor |
| CN107845651A (en) * | 2017-11-02 | 2018-03-27 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN108831899A (en) * | 2018-06-14 | 2018-11-16 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
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