CN104635675B - Precise voice control sensor integrated control device - Google Patents
Precise voice control sensor integrated control device Download PDFInfo
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- CN104635675B CN104635675B CN201410790974.4A CN201410790974A CN104635675B CN 104635675 B CN104635675 B CN 104635675B CN 201410790974 A CN201410790974 A CN 201410790974A CN 104635675 B CN104635675 B CN 104635675B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Abstract
The invention discloses a precise voice control sensor integrated control device. A charge control/output protection and output compensation controller is used for detecting voltage of a signal output end, detecting gate charge of an MOS (metal oxide semiconductor) transistor M1 and gate charge of an MOS transistor M2 and detecting voltage of a signal input end, signal output is compensated through an intelligent linear switch, and voltage of signal output is enabled to be within a set voltage range; or output is enabled to be zero or a switch K1 and/or a switch K2 is closed. The precise voice control sensor integrated control device has extremely high noise resistance, extremely wide voice rang, tiny distortion, extremely small size and extremely few ports; full-domain signal input is adopted, the variable-frequency intelligent linear switch is introduced in, the innovative charge algorithm control technique is adopted for charge control, output protection and output compensation control, further diodes, resistors and JFETs (junction field-effect transistors) adopted by the device are all special semiconductor processes, integration of a system is optimized fundamentally, and tiny size can be realized.
Description
Technical field
The present invention relates to a kind of voice operated sensor integrated-control apparatus, more particularly, to a kind of very small dimensions precision acoustic control sensing
Device integrated control device.
Background technology
Through retrieval, it is an a large amount of impedance transformation and the filter network application circuit of prior art as shown in Figure 1, electricity
Although road size is little, the signal transmission of alternation, antistatic effect extreme difference, response cannot be realized low.Fig. 2 is second, second
Individual circuit is complicated, needs complicated impedance matching conversion, control circuit and filter network, and impedance transformation ability is poor, and response is more
Low, and cannot realize integrated causing size also very big using discrete component.Two kinds of circuit all employ conventional deviding device
Part, all performs poor in reliability, antistatic effect and concordance.
Content of the invention
The technical problem to be solved is for above-mentioned the deficiencies in the prior art, provides a kind of precision acoustic control sensing
Device integrated control device, this accurate voice operated sensor integrated control device adopts universe signal input, and introduces frequency conversion intelligent line
Property switch, using innovation electric charge algorithm controls technology, may be used to Charge controlled, output protection and output compensate control, enter one
Step ground, diode of the present invention, resistance and JFET are special manufacture of semiconductor, so that the integrated of system is obtained
Basic optimization, is capable of very small dimensions.
For realizing above-mentioned technical purpose, the technical scheme that the present invention takes is：Accurate voice operated sensor integrated control device,
It is characterized in that：Including VCC input, signal input part ,-VCC input, signal output part and Charge controlled/output protection
And output compensating controller；
Also include diode D1, diode D2, diode D3, diode D6, diode D7, resistance R1, resistance R2, resistance
R3, resistance R4, resistance R6, resistance R7, resistance R8, metal-oxide-semiconductor M1, switch K1 and at least 3 upper diode groups；
Described diode D1 negative electrode is connected with VCC input, and anode is connected with diode D3 negative electrode by resistance R3；Two poles
Pipe D3 anode is connected with signal input part；Described diode D1 anode is also connected with diode D2 negative electrode；Diode D2 anode connects
Ground；Resistance R1 is in parallel with diode D1, and resistance R2 is in parallel with diode D2；
Metal-oxide-semiconductor M1 grid is connected with diode D1 anode by resistance R4, and switch K1 is connected to grid and the source of metal-oxide-semiconductor M1
Between pole, metal-oxide-semiconductor M1 source ground；Described upper diode group includes diode D4 and diode D5；Diode D4 negative electrode and VCC
Input connects, and anode is connected with diode D5 negative electrode；Diode D5 plus earth；In the upper diode group of adjacent two two
It is connected with resistance R5 between the anode of individual diode D4；Described upper diode group is respectively diode group L1, diode group L 2 and
Diode group LN (N>=3), between upper diode group, order is in parallel；Diode D4 anode in diode group L1 and metal-oxide-semiconductor M1
Drain electrode connects, and the diode D4 anode in diode group LN is connected with diode D6 negative electrode by resistance R 6；Diode D6 anode
Ground connection；Diode D6 negative electrode connects also by resistance R7 signal output part；Diode D7 negative electrode is connected with VCC input, anode
It is connected with signal output part；Resistance R8 one end is connected with VCC input, and the other end is connected with diode D6 negative electrode；
Also include diode D8, diode D9, diode D10, diode D13, diode D14, resistance R9, resistance R10,
Resistance R11, resistance R12, resistance R14, resistance R15, resistance R16, metal-oxide-semiconductor M2, switch K2 and at least 3 lower diode groups；
Described diode D8 anode is connected with-VCC input, and negative electrode is connected with diode D10 anode by resistance R11；
Diode D10 negative electrode is connected with signal input part；Described diode D8 negative electrode is also connected with diode D9 anode；Diode D9 sun
Pole is grounded；Resistance R9 is in parallel with diode D8, and resistance R10 is in parallel with diode D9；
Metal-oxide-semiconductor M2 grid is connected with diode D8 negative electrode by resistance R12, switch K2 be connected to metal-oxide-semiconductor M2 grid and
Between source electrode, metal-oxide-semiconductor M2 source ground；Described lower diode group includes diode D11 and diode D12；Diode D11 anode
It is connected with-VCC input, negative electrode is connected with diode D12 negative electrode；Diode D12 minus earth；Two adjacent lower diodes
It is connected with resistance R13 between the negative electrode of two diode D11 in group；Described lower diode group be respectively diode group Z1, two
Pole pipe group Z2 and diode group ZN (N>=3), between lower diode group, order is in parallel；Diode D11 in diode group Z1 is cloudy
Pole is connected with metal-oxide-semiconductor M2 drain electrode, and the diode D11 negative electrode in diode group ZN passes through resistance R 14 with diode D13 anode even
Connect；Diode D13 minus earth；Diode D7 anode is connected with signal output part also by resistance R15；Diode D14 anode
It is connected with-VCC input, negative electrode is connected with signal output part；Resistance R16 one end is connected with-VCC input, the other end and two
Pole pipe D13 anode connects；
Described switch K1 and switch K2 is frequency conversion intelligent linear switch；
Described Charge controlled/output protection and output compensating controller are used for detecting metal-oxide-semiconductor M1 gate charge and metal-oxide-semiconductor M2
Gate charge；When the gate charge of metal-oxide-semiconductor M1 gate charge and/or metal-oxide-semiconductor M2 exceeds set point, Charge controlled/defeated
Go out protection and output compensating controller makes switch K1 and/or switch K2 enter linear model or switching mode；
Described Charge controlled/output protection and output compensating controller are additionally operable to detection signal output end voltage；Work as signal
When output end voltage exceeds setting voltage scope still without departing from voltage protection point, Charge controlled/output protection and output are mended
Repay controller by frequency conversion intelligent linear switch, signal output to be compensated, the voltage making signal output is in setting voltage scope
Interior；When signal output terminal voltage exceeds voltage protection point, Charge controlled/output protection and output compensating controller pass through frequency conversion
Smart linear switch makes to be output as zero；
Described Charge controlled/output protection and output compensating controller are additionally operable to the voltage of detection signal input, work as letter
When the voltage of number input exceeds set point, Charge controlled/output protection and output compensating controller make switch K1 and switch
K2 closes；
As further improved technical scheme of the present invention, also include electric capacity C1 and electric capacity C2；Described electric capacity C1 one end with
VCC input connects, and the other end is grounded；Described electric capacity C2 one end is connected with-VCC input, and the other end is grounded.
As further improved technical scheme of the present invention, described upper diode group is 3-7 group；Described lower diode group
For 3-7 group.
In the present invention, be used to provide upper and lower limit bit port, quantity and the group number of upper diode group and lower diode group can
Freely changed by needs, the working method of three kinds of control models of described Charge controlled/output protection and output compensating controller,
Work schedule, conversion system are by the intelligent algorithm precise control being internally integrated.Present invention introduces the frequency conversion intelligent of original creation is linearly opened
Close, using the electric charge algorithm controls technology of innovation, may be used to Charge controlled, output protection and output and compensate control；By to defeated
Enter the monitoring of output, compensated using output and control impedance inverting network, lift output quality, reduce harmonic distortion and intermodulation is lost
Very；There is provided electrostatic leakage path clamp signal voltage using the method that spacing up and down and stored charge are released, greatly improve
Antistatic effect；Electric capacity is substituted using special semiconductor diode, both achieved filter action, greatly reinforced antistatic energy
Power, reduce capacitive reactance improve system response, also achieve integrability；Tradition electricity is substituted using special semiconductor resistor
Resistance, not only resistance accuracy is high and size is minimum, reliability is high optimizes output filter network so that system integrability, also essence
Really control the size of damping；Adapt to alternation input, greatly improve tonequality, the biasing of introducing reduces distortion；Extremely low posts
Raw electric capacity, improves Hz-KHz, reduces phase distortion；Using J-FET impedance transformation, strong antijamming capability, amplification performance
Excellent, improve system signal noise ratio；Only five ends are drawn, and significantly reduce peripheral circuit；All-semiconductor device designs, using integrated electricity
Road design can great minification, enable is made in the middle of earphone.The present invention has high noise resisting ability, extremely wide sound in a word
Domain, minimum distortion, minimum size and few port；Using universe signal input, and introduce frequency conversion intelligent linear switch,
Using the electric charge algorithm controls technology of innovation, may be used to Charge controlled, output protection and output and compensate control, further, this
Invent adopted diode, resistance and JFET and be special manufacture of semiconductor, make system integrated obtain basic
Optimize, be capable of very small dimensions.This accurate voice operated sensor integrated control device introduces smart linear switch, may be used to electric charge
Control, output protection and output compensate and control, and are capable of very small dimensions.
Brief description
Fig. 1 is the conversion of prior art middle impedance and filter network application circuit.
Fig. 2 is the circuit diagram that existing several employing discrete component is realized.
Fig. 3 is the circuit diagram of the present invention.
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described further.
Specific embodiment
Embodiment 1
Referring to Fig. 3, this accurate voice operated sensor integrated control device, defeated including VCC input, signal input part ,-VCC
Enter end, signal output part and Charge controlled/output protection and output compensating controller；Also include diode D1, diode D2,
Diode D3, diode D6, diode D7, resistance R1, resistance R2, resistance R3, resistance R4, resistance R6, resistance R7, resistance R8,
Metal-oxide-semiconductor M1, switch K1 and at least 3 upper diode groups；Described diode D1 negative electrode is connected with VCC input, and anode passes through electricity
Resistance R3 is connected with diode D3 negative electrode；Diode D3 anode is connected with signal input part；Described diode D1 anode also with two poles
Pipe D2 negative electrode connects；Diode D2 plus earth；Resistance R1 is in parallel with diode D1, and resistance R2 is in parallel with diode D2；Metal-oxide-semiconductor
M1 grid is connected with diode D1 anode by resistance R4, and switch K1 is connected between grid and the source electrode of metal-oxide-semiconductor M1, metal-oxide-semiconductor
M1 source ground；Described upper diode group includes diode D4 and diode D5；Diode D4 negative electrode is connected with VCC input,
Anode is connected with diode D5 negative electrode；Diode D5 plus earth；Two diode D4 in the upper diode group of adjacent two
Anode between be connected with resistance R5；Described upper diode group is respectively diode group L1, diode group L 2 and diode group LN
(N>=3), between upper diode group, order is in parallel；Diode D4 anode in diode group L1 is connected with metal-oxide-semiconductor M1 drain electrode, and two
Diode D4 anode in pole pipe group LN is connected with diode D6 negative electrode by resistance R 6；Diode D6 plus earth；Diode
D6 negative electrode connects also by resistance R7 signal output part；Diode D7 negative electrode is connected with VCC input, anode and signal output part
Connect；Resistance R8 one end is connected with VCC input, and the other end is connected with diode D6 negative electrode；Also include diode D8, diode
D9, diode D10, diode D13, diode D14, resistance R9, resistance R10, resistance R11, resistance R12, resistance R14, resistance
R15, resistance R16, metal-oxide-semiconductor M2, switch K2 and at least 3 lower diode groups；Described diode D8 anode is with-VCC input even
Connect, negative electrode is connected with diode D10 anode by resistance R11；Diode D10 negative electrode is connected with signal input part；Described two poles
Pipe D8 negative electrode is also connected with diode D9 anode；Diode D9 plus earth；Resistance R9 is in parallel with diode D8, resistance R10 with
Diode D9 is in parallel；Metal-oxide-semiconductor M2 grid is connected with diode D8 negative electrode by resistance R12, and switch K2 is connected to the grid of metal-oxide-semiconductor M2
Between pole and source electrode, metal-oxide-semiconductor M2 source ground；Described lower diode group includes diode D11 and diode D12；Diode D11
Anode is connected with-VCC input, and negative electrode is connected with diode D12 negative electrode；Diode D12 minus earth；Two under adjacent two
It is connected with resistance R13 between the negative electrode of two diode D11 in pole pipe group；Described lower diode group is respectively diode group
Z1, diode group Z2 and diode group ZN (N>=3), between lower diode group, order is in parallel；Diode in diode group Z1
D11 negative electrode is connected with metal-oxide-semiconductor M2 drain electrode, and the diode D11 negative electrode in diode group ZN passes through resistance R 14 and diode D13 sun
Pole connects；Diode D13 minus earth；Diode D7 anode is connected with signal output part also by resistance R15；Diode D14
Anode is connected with-VCC input, and negative electrode is connected with signal output part；Resistance R16 one end is connected with-VCC input, the other end
It is connected with diode D13 anode；Described switch K1 and switch K2 is frequency conversion intelligent linear switch；Described Charge controlled/output
Protection and output compensating controller are used for detecting the gate charge of metal-oxide-semiconductor M1 gate charge and metal-oxide-semiconductor M2；When metal-oxide-semiconductor M1 grid
When the gate charge of electric charge and/or metal-oxide-semiconductor M2 exceeds set point, Charge controlled/output protection and output compensating controller make
Switch K1 and/or switch K2 enters linear model or switching mode；Described Charge controlled/output protection and output compensating controller
It is additionally operable to detection signal output end voltage；When but signal output terminal voltage exceeds setting voltage scope without departing from voltage protection
During point, Charge controlled/output protection and output compensating controller are compensated to signal output by frequency conversion intelligent linear switch,
The voltage making signal output is in the range of setting voltage；When signal output terminal voltage exceeds voltage protection point, Charge controlled/defeated
Go out protection and output compensating controller makes to be output as zero by frequency conversion intelligent linear switch；Described Charge controlled/output protection and
Output compensating controller is additionally operable to the voltage of detection signal input, when the voltage of signal input part exceeds set point, electricity
Lotus control/output protection and output compensating controller make switch K1 and switch K2 closure；
Preferably, also include electric capacity C1 and electric capacity C2；Described electric capacity C1 one end is connected with VCC input, another
End ground connection；Described electric capacity C2 one end is connected with-VCC input, and the other end is grounded.Described upper diode group is 3-7 group；Under described
Diode group is also 3-7 group.
Claims (3)
1. a kind of precision voice operated sensor integrated control device it is characterised in that：Including VCC input, signal input part ,-VCC
Input, signal output part and Charge controlled/output protection and output compensating controller；
Also include diode D1, diode D2, diode D3, diode D6, diode D7, resistance R1, resistance R2, resistance R3,
Resistance R4, resistance R6, resistance R7, resistance R8, metal-oxide-semiconductor M1, switch K1 and at least 3 upper diode groups；
Described diode D1 negative electrode is connected with VCC input, and anode is connected with diode D3 negative electrode by resistance R3；Diode D3
Anode is connected with signal input part；Described diode D1 anode is also connected with diode D2 negative electrode；Diode D2 plus earth；Electricity
R1 is in parallel with diode D1 for resistance, and resistance R2 is in parallel with diode D2；
Metal-oxide-semiconductor M1 grid is connected with diode D1 anode by resistance R4, switch K1 be connected to the grid of metal-oxide-semiconductor M1 and source electrode it
Between, metal-oxide-semiconductor M1 source ground；Described upper diode group includes diode D4 and diode D5；Diode D4 negative electrode is inputted with VCC
End connects, and anode is connected with diode D5 negative electrode；Diode D5 plus earth；In the upper diode group of adjacent two two two
It is connected with resistance R5 between the anode of pole pipe D4；Described upper diode group is respectively diode group L1, diode group L 2 and two poles
Pipe group LN (N>=3), between upper diode group, order is in parallel；Diode D4 anode in diode group L1 is drained with metal-oxide-semiconductor M1
Connect, the diode D4 anode in diode group LN is connected with diode D6 negative electrode by resistance R 6；Diode D6 anode connects
Ground；Diode D6 negative electrode connects also by resistance R7 signal output part；Diode D7 negative electrode is connected with VCC input, anode with
Signal output part connects；Resistance R8 one end is connected with VCC input, and the other end is connected with diode D6 negative electrode；
Also include diode D8, diode D9, diode D10, diode D13, diode D14, resistance R9, resistance R10, resistance
R11, resistance R12, resistance R14, resistance R15, resistance R16, metal-oxide-semiconductor M2, switch K2 and at least 3 lower diode groups；
Described diode D8 anode is connected with-VCC input, and negative electrode is connected with diode D10 anode by resistance R11；Two poles
Pipe D10 negative electrode is connected with signal input part；Described diode D8 negative electrode is also connected with diode D9 anode；Diode D9 anode connects
Ground；Resistance R9 is in parallel with diode D8, and resistance R10 is in parallel with diode D9；
Metal-oxide-semiconductor M2 grid is connected with diode D8 negative electrode by resistance R12, and switch K2 is connected to grid and the source electrode of metal-oxide-semiconductor M2
Between, metal-oxide-semiconductor M2 source ground；Described lower diode group includes diode D11 and diode D12；Diode D11 anode with-
VCC input connects, and negative electrode is connected with diode D12 negative electrode；Diode D12 minus earth；Two adjacent lower diode groups
It is connected with resistance R13 between the interior negative electrode of two diode D11；Described lower diode group is respectively diode group Z1, two poles
Pipe group Z2 and diode group ZN (N>=3), between lower diode group, order is in parallel；Diode D11 negative electrode in diode group Z1
It is connected with metal-oxide-semiconductor M2 drain electrode, the diode D11 negative electrode in diode group ZN is connected with diode D13 anode by resistance R 14；
Diode D13 minus earth；Diode D7 anode is connected with signal output part also by resistance R15；Diode D14 anode with-
VCC input connects, and negative electrode is connected with signal output part；Resistance R16 one end is connected with-VCC input, the other end and diode
D13 anode connects；
Described switch K1 and switch K2 is frequency conversion intelligent linear switch；
Described Charge controlled/output protection and output compensating controller are used for detecting the grid of metal-oxide-semiconductor M1 gate charge and metal-oxide-semiconductor M2
Pole electric charge；When the gate charge of metal-oxide-semiconductor M1 gate charge and/or metal-oxide-semiconductor M2 exceeds set point, Charge controlled/output is protected
Shield and output compensating controller make switch K1 and/or switch K2 enter linear model or switching mode；
Described Charge controlled/output protection and output compensating controller are additionally operable to detection signal output end voltage；Work as signal output
When terminal voltage exceeds setting voltage scope still without departing from voltage protection point, Charge controlled/output protection and output compensate control
Device processed is compensated to signal output by frequency conversion intelligent linear switch, and the voltage making signal output is in the range of setting voltage；
When signal output terminal voltage exceeds voltage protection point, Charge controlled/output protection and output compensating controller pass through frequency conversion intelligence
Can linear switch make to be output as zero；
Described Charge controlled/output protection and output compensating controller are additionally operable to the voltage of detection signal input, when signal is defeated
When the voltage entering end is beyond set point, Charge controlled/output protection and output compensating controller make switch K1 and switch K2 close
Close.
2. according to claim 1 precision voice operated sensor integrated control device it is characterised in that：Also include electric capacity C1 and
Electric capacity C2；Described electric capacity C1 one end is connected with VCC input, and the other end is grounded；Described electric capacity C2 one end is with-VCC input even
Connect, the other end is grounded.
3. according to claim 1 and 2 precision voice operated sensor integrated control device it is characterised in that：Described upper two poles
Guan Zuwei 3-7 group；Described lower diode group is also 3-7 group.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410790974.4A CN104635675B (en) | 2014-12-17 | 2014-12-17 | Precise voice control sensor integrated control device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410790974.4A CN104635675B (en) | 2014-12-17 | 2014-12-17 | Precise voice control sensor integrated control device |
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| CN104635675A CN104635675A (en) | 2015-05-20 |
| CN104635675B true CN104635675B (en) | 2017-02-22 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1337046A (en) * | 1999-01-12 | 2002-02-20 | 高通股份有限公司 | Linear sampling switch |
| CN201418142Y (en) * | 2009-05-22 | 2010-03-03 | 杨辉隆 | microphone |
| CN101848288A (en) * | 2010-04-19 | 2010-09-29 | 北京东微世纪科技有限公司 | Simulation noise reduction system and method for microphone |
| WO2012091662A1 (en) * | 2010-12-28 | 2012-07-05 | Research Electronics Leksand Ab | Method for forming an electric signal representing a sound and a device therefor |
-
2014
- 2014-12-17 CN CN201410790974.4A patent/CN104635675B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1337046A (en) * | 1999-01-12 | 2002-02-20 | 高通股份有限公司 | Linear sampling switch |
| CN201418142Y (en) * | 2009-05-22 | 2010-03-03 | 杨辉隆 | microphone |
| CN101848288A (en) * | 2010-04-19 | 2010-09-29 | 北京东微世纪科技有限公司 | Simulation noise reduction system and method for microphone |
| WO2012091662A1 (en) * | 2010-12-28 | 2012-07-05 | Research Electronics Leksand Ab | Method for forming an electric signal representing a sound and a device therefor |
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| CN104635675A (en) | 2015-05-20 |
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