CN104624336A - Simple preparation method for metal oxide semiconductor quantum dot - Google Patents
Simple preparation method for metal oxide semiconductor quantum dot Download PDFInfo
- Publication number
- CN104624336A CN104624336A CN201510036334.9A CN201510036334A CN104624336A CN 104624336 A CN104624336 A CN 104624336A CN 201510036334 A CN201510036334 A CN 201510036334A CN 104624336 A CN104624336 A CN 104624336A
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- China
- Prior art keywords
- oxide semiconductor
- quantum dot
- metal
- simple preparation
- mos
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C19/00—Other disintegrating devices or methods
- B02C19/06—Jet mills
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/54—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing zinc or cadmium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
Abstract
The invention discloses a simple preparation method for a metal oxide semiconductor quantum dot. The simple preparation method comprises the following step: reducing diameter of particles by mechanically crushing a metal oxide semiconductor to obtain the metal oxide semiconductor quantum dot which is 10-50 nanometers in diameter.
Description
Technical field
The present invention relates to a kind of simple preparation method of metal-oxide semiconductor (MOS) quantum dot, belong to the technology of preparing of function nano particle.
Background technology
Quantum dot is also known as semiconductor nanocrystals, and the size of its three dimensions is all below 100 nanometers, and outward appearance is just like a minimum pointing object, and the motion of its internal electron in all directions is all limited to.The special construction of quantum dot causes it to have skin effect, quantum size effect, dielectric resistance chance effect and macro quanta tunnel effect etc., thus shows the physicochemical properties being different from macroscopic material, has larger application potential in functional material.
Through years of researches, establish the preparation method of multiple quantum dot so far, and be chemically main, comprising: adopt the method for colloid chemistry to synthesize in organic system; Directly synthesize in aqueous.But the quantum dot output prepared by these class methods is little, and kind is restricted, prepare quantum dot then rare report by physical method.
Summary of the invention
The object of the invention is satisfied modern people to the demand of quantum dot/functional material, a kind of simple preparation method of metal-oxide semiconductor (MOS) quantum dot is provided, for the extensive Synthesis and applications of quantum dot lays the foundation.
According to technical scheme provided by the invention, a kind of simple preparation method of metal-oxide semiconductor (MOS) quantum dot comprises the following steps:
1) take a certain amount of metal-oxide semiconductor (MOS) powder, join in the mechanical crushing device set, pulverize;
2) previous step is pulverized the powder obtained to repeat repeatedly to pulverize, obtain corresponding metal-oxide semiconductor (MOS) quantum dot.
Wherein, metal-oxide semiconductor (MOS) is zinc oxide, cadmium oxide, titanium dioxide, tin ash, and its particle size range is 500-2000 nanometer; Mechanical crushing device is: airslide disintegrating mill; Pulverizing number of times is 2-4 time, and the particle diameter of gained quantum dot is 10-50 nanometer.
The present invention the products characteristics that describes be metal-oxide semiconductor (MOS) quantum dot.
This technology for quantum dot simple, prepare on a large scale, the quantum dot obtained can be applied to the preparation of functional fibre, plastics, meets the demand of people for function textile, functional plastics.
Accompanying drawing explanation
Fig. 1 is example 1 gained Zinc oxide quantum dot;
Fig. 2 is example 2 gained titanium dioxide quantum dot.
Detailed description of the invention
The present invention is a kind of preparation method of metal-oxide semiconductor (MOS) quantum dot, the steps include:
1) take a certain amount of metal-oxide semiconductor (MOS) powder, join in the mechanical crushing device set, pulverize;
2) previous step is pulverized the powder obtained to repeat to pulverize, obtain corresponding metal-oxide semiconductor (MOS) quantum dot.
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Embodiment 1:
Take 5kg Zinc oxide powder, join in the airslide disintegrating mill set, pulverize and obtain a powder pulverized powder after 30-60 minute, carry out second time and pulverize, obtain the Zinc oxide quantum dot that diameter is 50 nanometers.
Embodiment 2:
Take 5kg titania powder, join in the high energy ball mill set, pulverize and obtain a powder pulverized powder after 30-60 minute, and repeat second time pulverizing, obtain the titanium dioxide quantum dot that diameter is 50 nanometers.
Embodiment 3:
Take 5kg Zinc oxide powder, join in the airslide disintegrating mill set, pulverize and obtain a powder pulverized powder after 30-60 minute, and repeat three pulverizing, obtain the Zinc oxide quantum dot that diameter is 10 nanometers.
Claims (5)
1. a simple preparation method for metal-oxide semiconductor (MOS) quantum dot, is characterized in that the method by mechanical crushing, diameter is broken to diameter 10-50 nanometer range more than the metal oxide semiconductor powder of 500 nanometers, the steps include:
1) take a certain amount of metal-oxide semiconductor (MOS) powder, join in the mechanical crushing device set, pulverize;
2) previous step is pulverized the powder obtained to repeat to pulverize, obtain corresponding metal-oxide semiconductor (MOS) quantum dot.
2. the simple preparation method of metal oxide semiconductor quantum dot according to claim 1, it is characterized in that step 1) described in metal-oxide semiconductor (MOS) be zinc oxide, cadmium oxide, titanium dioxide, tin ash, its particle size range is 500-2000 nanometer.
3. the simple preparation method of metal oxide semiconductor quantum dot according to claim 1, is characterized in that step 1) the mechanical crushing device that uses is: airslide disintegrating mill.
4. the simple preparation method of metal oxide semiconductor quantum dot according to claim 1, is characterized in that step 1) the pulverizing number of times of mechanical crushing device that uses is for 2-4 time.
5. the simple preparation method of metal oxide semiconductor quantum dot according to claim 1, the particle diameter of prepared metal-oxide semiconductor (MOS) quantum dot is 10-50 nanometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510036334.9A CN104624336A (en) | 2015-01-22 | 2015-01-22 | Simple preparation method for metal oxide semiconductor quantum dot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510036334.9A CN104624336A (en) | 2015-01-22 | 2015-01-22 | Simple preparation method for metal oxide semiconductor quantum dot |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104624336A true CN104624336A (en) | 2015-05-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510036334.9A Pending CN104624336A (en) | 2015-01-22 | 2015-01-22 | Simple preparation method for metal oxide semiconductor quantum dot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104624336A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2182342B (en) * | 1985-10-31 | 1989-09-27 | Sony Corp | Methods of preparing fluorescent materials of small particle size |
| CN101049580A (en) * | 2007-04-30 | 2007-10-10 | 北京航空航天大学 | Technique and equipment for preparing Nano granules in high purity by using method of comminution by gas stream |
| JP2008291125A (en) * | 2007-05-25 | 2008-12-04 | Kuraray Luminas Co Ltd | Method for producing phosphor |
| CN102011194A (en) * | 2010-10-11 | 2011-04-13 | 中国科学院青岛生物能源与过程研究所 | Photovoltaic semiconductor nanocrystalline and preparation method and application thereof |
| CN102079978A (en) * | 2010-12-15 | 2011-06-01 | 东南大学 | Preparation method of quantum dot nano material and method for coating silicon dioxide on surface of quantum dot nano material |
-
2015
- 2015-01-22 CN CN201510036334.9A patent/CN104624336A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2182342B (en) * | 1985-10-31 | 1989-09-27 | Sony Corp | Methods of preparing fluorescent materials of small particle size |
| CN101049580A (en) * | 2007-04-30 | 2007-10-10 | 北京航空航天大学 | Technique and equipment for preparing Nano granules in high purity by using method of comminution by gas stream |
| JP2008291125A (en) * | 2007-05-25 | 2008-12-04 | Kuraray Luminas Co Ltd | Method for producing phosphor |
| CN102011194A (en) * | 2010-10-11 | 2011-04-13 | 中国科学院青岛生物能源与过程研究所 | Photovoltaic semiconductor nanocrystalline and preparation method and application thereof |
| CN102079978A (en) * | 2010-12-15 | 2011-06-01 | 东南大学 | Preparation method of quantum dot nano material and method for coating silicon dioxide on surface of quantum dot nano material |
Non-Patent Citations (1)
| Title |
|---|
| 渠莉华等: "量子点的制备及应用研究进展", 《西安邮电学院学报》 * |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150520 |