CN104617784B - A kind of inversion module - Google Patents
A kind of inversion module Download PDFInfo
- Publication number
- CN104617784B CN104617784B CN201510013911.2A CN201510013911A CN104617784B CN 104617784 B CN104617784 B CN 104617784B CN 201510013911 A CN201510013911 A CN 201510013911A CN 104617784 B CN104617784 B CN 104617784B
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- Prior art keywords
- base plate
- copper bar
- bipolar transistor
- electric capacity
- inversion module
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The present invention relates to a kind of inversion module, it includes：It is provided with the radiator and several half bridge arm units on base plate of base plate, wherein, each half bridge arm unit includes insulated gate bipolar transistor component outwards stacked gradually from base plate and spaced, copper bar component, gate-drive plate, the support bar component of gate-drive plate is drawn and supported from insulated gate bipolar transistor component, and the Support Capacitor on base plate, wherein, insulated gate bipolar transistor component includes the first insulated gate bipolar transistor element being provided with installed in base plate on the end face of Support Capacitor, first insulated gate bipolar transistor element, copper bar component electrically connects insulated gate bipolar transistor component, Support Capacitor, support bar component and as the input and output end of half bridge arm unit.The degree of modularity of the inversion module is high, and generalization degree is high, and device layout rationally, and can be not provided with composite bus bar.
Description
Technical field
The present invention relates to a kind of modular power components, more particularly to a kind of inversion module.
Background technology
Current electric railway system provides direct current using contact network technology or third-rail feeding technology to locomotive
The direct current that dc source is provided can be converted on locomotive source, the inverter installed on locomotive the exchange needed for other equipment
Electricity.With magnetic suspension train, subway city rail vehicle, EMU, high-power electric locomotive, the development of Bus Technology and domestic
Change, IGBT converter technology (IGBT is insulated gate bipolar transistor) is widely used, but due to development time compared with
It is short, current some shortcomings of existing generally existing：(1) degree of modularity is not high.Product is often individually designed according to demand, does not have
Highly integrated design is carried out to generic circuit cells, volume ratio is larger, install inconvenient.(2) generalization degree is not high.Do not examine
Consider the multiple combination connected modes, multiple power, the application of voltage class such as the series connection and parallel connection of general purpose I GBT circuit topology units
Occasion.(3) device layout is unreasonable.The reasonable design of device electric insulation is not accounted for, electric property is undesirable.(4) use
Inversion module cost is too high caused by composite bus bar.Electrically connected using composite bus bar more than the IGBT converter of prior art
Connect, the high processing costs of composite bus bar.
The content of the invention
The technical problems to be solved by the invention are to overcome the degree of modularity of inversion module of the prior art not
High, generalization degree is high, using manufacturing cost high caused by composite bus bar.
In order to solve the above-mentioned technical problem, embodiments herein provide firstly a kind of inversion module, and it includes：Set
There are the radiator and several half bridge arm units installed in base plate side of base plate, wherein,
Each half bridge arm unit includes that insulated gate bipolar outwards stacked gradually from base plate and spaced is brilliant
Body tube assembly, copper bar component, gate-drive plate, draw and support gate-drive plate from insulated gate bipolar transistor component
Support bar component, and the Support Capacitor on base plate,
Wherein, insulated gate bipolar transistor component includes be provided with installed in base plate on the end face of Support Capacitor first
Insulated gate bipolar transistor element, the second insulated gate bipolar transistor element, copper bar component electrical connection insulated gate bipolar
Transistor component, Support Capacitor, support bar component and as the input and output end of half bridge arm unit.
In a specific embodiment, the first insulated gate bipolar transistor element includes revealing from away from the side of base plate
Go out the first gate lead, the first emitter stage pin and the first colelctor electrode pin on surface,
Second insulated gate bipolar transistor element include from away from base plate side exposing surface the second gate lead,
Second emitter stage pin and the second colelctor electrode pin,
Support bar component is connected respectively in the first gate lead, the first colelctor electrode pin, the second gate pole including one end
Pin, the second emitter stage pin and the other end are all connected to first support bar, second support bar, the 3rd support of gate-drive plate
Bar, the 4th support bar, one end connect the of the first emitter stage pin or second colelctor electrode pin other end connection gate-drive plate
Five support bars,
Support Capacitor includes being provided with the first capacitance component of the first electric capacity, being provided with the second capacitance group of the second electric capacity
Part,
Copper bar component include being connected to a terminal of second support bar and the first electric capacity and for external direct current power supply just
First copper bar of electrode, is connected to a terminal of the 4th support bar and the second electric capacity and for external direct current power supply negative electrode
Second copper bar, be connected to the 5th support bar and be connected in the second colelctor electrode pin and the first emitter stage pin not directly with
5th support bar be connected pin and for the 3rd copper bar as the first output end, another end of the first electric capacity is connected respectively
Son is another terminal with the second electric capacity and for the 4th copper bar as the second output end.
In a specific embodiment, the first capacitance component is located at the first insulated gate bipolar transistor element away from the
The side of two insulated gate bipolar transistor elements, the second capacitance component deviates from positioned at the second insulated gate bipolar transistor element
The side of the first insulated gate bipolar transistor element, the parallel gate-drive plate of base plate.
In a specific embodiment, the first copper bar, the second copper bar, the 3rd copper bar, the 4th copper bar stacked arrangement are adjacent
Copper bar between insulating barrier is set.
In a specific embodiment, successively by the second copper bar, the 3rd copper bar, the 4th copper bar, the first copper bar order
Arrangement, the second copper bar is closest to base plate.
In a specific embodiment, the first capacitance component includes being used for and being unified into some electric capacity unit of the first electric capacity
Part, and first electric capacity hoop of some capacity cell hoops of the first electric capacity on base plate will be constituted,
Second capacitance component includes being used for and being unified into some capacity cells of the second electric capacity, and will constitute the second electric capacity
Second electric capacity hoop of some capacity cell hoops on base plate.
In a specific embodiment, the first capacitance component includes being arranged between its capacity cell and the first electric capacity hoop
The first rubber blanket and the second rubber blanket for being arranged between capacity cell and base plate, and/or
Second capacitance component includes the first rubber blanket and the setting that are arranged between its capacity cell and the second electric capacity hoop
The second rubber blanket between capacity cell and base plate.
In a specific embodiment, the first epoxy resin bonded fiber is provided between the second rubber blanket and base plate.
In a specific embodiment, inversion module also includes being arranged on the temperature of on base plate and external control unit
Relay and the heat conductive insulating rubber film being arranged between temperature relay and base plate, temperature relay are detected for working as
Baseplate temp be higher than preset value when to control unit send early warning signal.
In a specific embodiment, inversion module also includes that being located at temperature relay deviates from base plate side, edge
Part is fixed on the second epoxy fabric swatch that temperature relay is pressed to base plate on base plate and center section.
Compared with prior art, embodiments herein has the advantage that：
(1) degree of modularity is high, and each half bridge arm unit of inversion module is independently arranged and spaced, and independently carries out
Work, equivalent to inversion module in smaller module.In addition, inversion module can with drawer type installed in the inverse of regulator cubicle
Become in module cage, convenient disassembly, and it is good with the insulation of regulator cubicle.
(2) the inversion module generalization degree is high, separate between each half bridge arm unit, can optionally connect
Or the input of each half bridge arm unit in parallel so that inversion module goes for different application scenarios.
(3) rationally, opening structure be laminated and spaced is arranged between critical piece can keep main to device layout
Good insulation between part and carry out good ventilation radiating.
(4) this inversion module can be not provided with composite bus bar.
Other features and advantages of the present invention will be illustrated in the following description, also, the partly change from specification
Obtain it is clear that or being understood by implementing technical scheme.The purpose of the present invention and other advantages can by
Specifically noted structure is realized and obtained in specification, claims and accompanying drawing.
Brief description of the drawings
Accompanying drawing is used for providing to the technical scheme of the application or further understanding for prior art, and constitutes specification
A part.Wherein, the accompanying drawing of expression the embodiment of the present application is used to explain the technical side of the application together with embodiments herein
Case, but do not constitute the limitation to technical scheme.
Fig. 1 is the schematic front view of the broken section of the inversion module of one embodiment of the present invention.
Fig. 2 is the schematic top plan view of the broken section of the inversion module of one embodiment of the present invention.
Fig. 3 is the left view schematic diagram of the broken section of the inversion module of one embodiment of the present invention.
Specific embodiment
Each feature in the embodiment of the present application and embodiment, can be combined with each other under the premise of not colliding, institute's shape
Into technical scheme within protection scope of the present invention.Described in detail below with reference to drawings and Examples of the invention
Implementation method.
Fig. 1 to Fig. 3 schematically show the structure of the inversion module of one embodiment of the present invention.
As shown in figure 1, inversion module includes half bridge arm unit of radiator 10 and two on radiator 10
20、30。
As shown in Fig. 2 radiator 10 includes base plate 11 and is vertically mounted on some on the same panel of base plate 11
Fin 12.Preferably, radiator 10 is Aluminium Radiator.Heat on base plate 11 can be quickly transmitted on fin 12,
In diffusing to environment through fin 12 again.Radiator 10 can use air blast cooling.
Each half bridge arm unit includes the insulated gate bipolar crystal on the panel of fin 12 installed in base plate 11
Tube assembly.Insulated gate bipolar transistor component includes the first insulated gate bipolar transistor element 31 and the second insulated gate bipolar
Transistor npn npn element 32.Each half bridge arm unit also includes insulated gate outwards stacked gradually from base plate 11 and spaced
Bipolar transistor tube assembly, copper bar component 41, gate-drive plate 33.First insulated gate bipolar transistor element 31 includes encapsulation
The plastic casing of insulated gate bipolar transistor and respectively by the gate pole of the insulated gate bipolar transistor, emitter stage and current collection
The first gate lead, the first emitter stage pin and the first colelctor electrode pin that pole is drawn from plastic casing.First gate lead,
First emitter stage pin, the first colelctor electrode pin deviate from the one side of base plate 11 to the first insulated gate bipolar transistor element 31
Extend plastic casing.
Second insulated gate bipolar transistor element 32 include the plastic casing of packaging insulating grid bipolar transistor and
The second gate pole that the gate pole of the insulated gate bipolar transistor, emitter and collector are drawn from plastic casing is drawn respectively
Pin, the second emitter stage pin and the second colelctor electrode pin.Second gate lead, the second emitter stage pin, the second colelctor electrode pin
Extend plastic casing away from the one side of base plate 11 to the second insulated gate bipolar transistor element 32.
First gate lead, the first emitter stage pin, the first colelctor electrode pin, the second gate lead, the second emitter stage draw
Pin, the second colelctor electrode pin can be configured to metal pins, be preferably provided with the tubular pin of internal thread.
First insulated gate bipolar transistor element 31 and the second insulated gate bipolar transistor element 32 are operationally sent out
Heat, and transfer heat to be radiated on the base plate 11 of radiator 10.
In the present embodiment, each half bridge arm unit also includes being arranged on the He of the first insulated gate bipolar transistor element 31
Second insulated gate bipolar transistor element 32 is away from the gate-drive plate 33 of the side of base plate 11 and by gate-drive plate 33
Prop up the support bar component 40 for coming.Support bar component 40 include be each perpendicular to base plate 11 and one end is all connected with gate-drive plate 33
First support bar, second support bar, the 3rd support bar, the 4th support bar, the 5th support bar.First support bar, the second support
Bar, the 3rd support bar, the 4th support bar, the other end of the 5th support bar are connected to the first gate lead, the first colelctor electrode
Pin, the second gate lead, the second emitter stage pin, the second colelctor electrode pin.Such first to the 5th support bar is just by gate pole
Driving plate 33 is supported, and forms electrical connection.Preferably, first support bar, second support bar, the 3rd support bar,
Four support bars, the 5th support bar are set with insulation sleeve.
In the present embodiment, each half bridge arm unit also includes the Support Capacitor on base plate 11.Support Capacitor bag
Include positioned at the first insulated gate bipolar transistor element 31 away from the first of the side of the second insulated gate bipolar transistor element 32
Capacitance component 34, and deviate from the first insulated gate bipolar transistor element positioned at the second insulated gate bipolar transistor element 32
Second capacitance component 35 of 31 sides.First capacitance component 34 is similar with the structure of the second capacitance component 35.First capacitance component
34 include the first electric capacity for being made up of the capacity cell of four parallel connections and by this four capacity cell hoops on base plate 11 the
One electric capacity hoop 36.Second capacitance component 35 includes the second electric capacity being made up of the capacity cell of four parallel connections and by this four electricity
Hold second electric capacity hoop 37 of the element hoop on base plate 11.Preferably, the first electric capacity hoop 36 and the second electric capacity hoop 37 are arch strip.
Preferably, the first electric capacity and the second electric capacity is equal in magnitude.First capacitance component 34 and the second capacitance component 35 include setting
The first rubber blanket 48 between capacity cell and the first electric capacity hoop 36 or the second electric capacity hoop 37, it is arranged on capacity cell and base plate
The second rubber blanket between 11 and the first epoxy resin bonded fiber being arranged between the second rubber blanket and base plate 11.Set first
The rubber blanket of rubber blanket 48 and second is advantageous in that, increases the lifting surface area of capacity cell, it is to avoid capacity cell be squeezed it is bad, separately
Outer, the first rubber blanket 48 and the second rubber blanket may also operate as the effect of insulation.First epoxy resin bonded fiber can play every
The effect of heat, it is to avoid base plate 11 causes that capacity cell temperature is too high and causes capacity cell hydraulic performance decline to capacity cell heat conduction.
In the present embodiment, each half bridge arm unit also includes being arranged on the insulated gate bipolar of gate-drive plate 33 and first
Copper bar component 41 between transistor unit 31.Copper bar component 41 include the first parallel with base plate 11 copper bar, the second copper bar,
3rd copper bar, the 4th copper bar and the insulating barrier being arranged between adjacent two pieces of copper bars.First copper bar, the second copper bar, the 3rd bronze medal
Row, the 4th copper bar stacked arrangement, and the second copper bar, the 3rd copper bar, the 4th are pressed successively to away from base plate 11 near base plate 11
The order arrangement of copper bar, the first copper bar.First copper bar is connected to a terminal of second support bar and the first electric capacity, the second copper bar
Be connected to a terminal of the 4th support bar and the second electric capacity, the 3rd copper bar be connected to through the second copper bar and not with the second copper bar
Connection the first emitter stage pin, the 4th copper bar be connected to the first electric capacity another terminal and the second electric capacity another
Terminal.The support bar not being attached thereto for other is provided with first copper bar, the second copper bar, the 3rd copper bar, the 4th copper bar to lead to
The through hole crossed.
First copper bar also includes drawing to first extended away from the direction of base plate 11 from the edge of the main part of the first copper bar
Go out copper bar 42.Second copper bar also includes drawing to second extended away from the direction of base plate 11 from the edge of the main part of the second copper bar
Go out copper bar 43.3rd copper bar also includes drawing to the 3rd extended away from the direction of base plate 11 from the edge of the main part of the 3rd copper bar
Go out copper bar 44.4th copper bar also includes drawing to the 4th extended away from the direction of base plate 11 from the edge of the main part of the 4th copper bar
Go out copper bar 45.
After above-mentioned connection, each half bridge arm unit constitutes one and half bridge arms of inverter circuit.First draws
Copper bar 42 is electrically connected with the first colelctor electrode pin, the first electric capacity.Second draws the emitter stage pin of copper bar 43 and second, the second electric capacity
It is electrically connected.3rd extraction copper bar 44 is electrically connected with the second colelctor electrode pin, the first emitter stage pin.4th draws copper bar 45 and the
One electric capacity, the electrical connection of the second electric capacity.First draws input positive pole of the copper bar 42 as single half bridge arm unit, and second draws copper bar
43 as single half bridge arm unit input negative pole, the 3rd draw copper bar 44 as single half bridge arm unit the first output end,
4th draws second output end of the copper bar 45 as single half bridge arm unit.Gate-drive plate 33 also includes passing through support bar component
40 two gate drive circuits being connected with the first insulated gate bipolar transistor and the second insulated gate bipolar transistor respectively
Correspondence connection.After the first extraction extraction copper of copper bar 42 and second is respectively connected to the positive electrode of dc source and negative electrode, two doors
Pole drive circuit can be sent out to the first insulated gate bipolar transistor element and the second insulated gate bipolar transistor element respectively
Driving pulse is sent to turn on the first insulated gate bipolar transistor element and the second insulated gate bipolar transistor element in turn, from
And export alternating current between the 3rd extraction copper bar 44 and the 4th draws copper bar 45.
As can be seen that be between half bridge arm unit it is separate, can optionally by the defeated of two and half bridge arm units
Entering end carries out serial or parallel connection to realize different functions, meet different application scenarios.For example, can be by two and half bridge arm lists
The input series connection of unit 20,30, output end are in parallel, will first the first extraction copper bar of half bridge arm unit 20 as the inversion
The input positive pole of module, copper bar as the input negative pole of the inversion module is drawn using second the second of half bridge arm unit 30, will
Second extraction copper bar of first half bridge arm unit 20 is drawn copper bar and is connected with second the first of half bridge arm unit 30, and by two
Individual 3rd draws copper bar is connected, and draws copper bar for two the 4th and is connected, and so, the voltage of inversion module input is divided equally each
Half bridge arm unit input, reduces the voltage stress of IGBT elements, improves system processing power treatment energy where the inversion module
Power, and the thermal stress of each half bridge arm unit divides equally, and improves the reliability of the system, therefore this connected mode is especially suitable for
The powerful application scenario of high input voltage.Certainly, the inversion module can also be used the defeated of two and half bridge arm units 20,30
Enter end series connection, output end in parallel, will two first draw the input positive poles that copper bar is connected as inversion module, by two second
The input negative pole that copper bar is connected as inversion module is drawn, two the 3rd extraction copper bars are connected, copper bar is drawn by two the 4th
It is connected, after so connecting, is especially suitable for the application scenario of low input and needs the occasion for flowing.Need to say, the
The connected mode of one emitter stage pin and the second colelctor electrode pin can be replaced, i.e. the 5th support bar is not directly connected the second current collection
Pole pin but the first emitter stage pin of connection, the 3rd copper bar are not directly connected the first emitter stage pin but the second current collection of connection
Pole pin.Foregoing identical effect can be reached after so setting.
In the present embodiment, inversion module also includes being arranged on temperature relay 46 on base plate 11.Outside temperature relay 46
Control unit is connect, for sending early warning signal to control unit when the temperature of base plate 11 for detecting is higher than preset value.This is preset
Value is preferably 70~100 DEG C, more preferably 85 DEG C.The temperature relay 46 is arranged on the middle part of base plate 11, double in four insulated gates
Between bipolar transistor element, after so setting, temperature relay 46 can detect the maximum temperature of base plate 11.Temperature after
Heat conductive insulating rubber film is set between electrical equipment 46 and base plate 11.After heat conductive insulating rubber film is set, base plate 11 and temperature after
Gap between electrical equipment 46 is filled by heat conductive insulating rubber film, and the heat on base plate 11 can quickly be transmitted to temperature relay
On device 46 so that temperature relay 46 is more accurate.Additionally, because the base plate 11 of radiator 10 is there may be induced-current,
Base plate 11 and temperature relay 46 can also be carried out electrical isolation by heat conductive insulating rubber film, it is to avoid the electricity produced on base plate 11
Pressure punctures temperature relay 46.Preferably, inversion module also includes that being located at temperature relay 46 deviates from the side of base plate 11, edge
Part is fixed on the second epoxy fabric swatch 47 that temperature relay 46 is pressed to base plate 11 on base plate 11 and center section.Second ring
The marginal portion of oxygen fabric swatch 47 can use and be bolted on base plate 11.Temperature relay 46 is pressed in bottom by the second epoxy fabric swatch 47
Fixed on plate 11 and by temperature relay 46, such being advantageous in that between temperature relay 46 and base plate 11 is more insulated.Temperature
Insulating Design between relay 46 and base plate 11, it is possible to prevente effectively from early warning of the high pressure on base plate 11 to temperature relay 46
Signal produces influence.
In the present embodiment, inversion module can with drawer type in the inversion module case of regulator cubicle.Inversion module
Also include being provided with installed in base plate 11 in the one side of fin 12, being set around the face marginal portion and in the 3rd of frame shape the
Epoxy fabric swatch 13.When inversion module is inserted into inversion module case, the 3rd epoxy fabric swatch 13 can abut inversion module case from
And avoid the other parts of inversion module from being contacted with inversion module case.3rd epoxy fabric swatch 13 can effectively by inversion module with
Electrical isolation and heat-insulated is carried out between inversion module case.Along on the end that the 3rd epoxy fabric swatch 13 is abutted with inversion module case
The circular direction relative set sealing ring mounting groove of three epoxy fabric swatch 13, inversion module also includes being arranged on the sealing ring mounting groove
Interior sealing ring 14.After sealing ring 14 is set, can form air gap sealed between inversion module and inversion module case, it is to avoid inverse
Become module when carrying out air blast cooling to the side leakage gas of gate-drive plate 33 of inversion module.Inversion module also includes running through the He of base plate 11
The epoxy insulation sleeve 15 of the 3rd epoxy fabric swatch 13 and through epoxy insulation sleeve 15 and the spiral shell that is fixed on inversion module case
Nail.After so setting, inversion module is secured in inversion module case, and is kept between inversion module and inversion module case
Insulation.Inversion module also includes being fixed on using sunk screw the insulated nylon of side that is on base plate 11 and being arranged on base plate 11
Draw runner 17 and it is separately mounted to two U-shaped handles 16 of the both sides of base plate 11.Insulated nylon draw runner 17 can reduce inversion module
And the frictional force between inversion module case, more effortlessly inversion module can be extracted out or advanced in inversion module case, and made
Obtain electrical isolation between the side of base plate 11 and inversion module case.It is inverse that U-shaped handle 16 can facilitate workman to carry out installation or removal
Become module operation.
Although disclosed herein implementation method as above, described content is only to readily appreciate technical solution of the present invention
And the implementation method for using, it is not limited to the present invention.Technical staff in any art of the present invention, is not departing from this
On the premise of the disclosed spirit and scope of invention, any modification and change can be carried out in the form and details implemented,
But scope of patent protection of the invention, must be still defined by the scope of which is defined in the appended claims.
Claims (9)
1. a kind of inversion module, it is characterised in that including：It is provided with the radiator and several on base plate of base plate
Half bridge arm unit, wherein,
Each half bridge arm unit includes insulated gate bipolar transistor outwards stacked gradually from base plate and spaced
Component, copper bar component, gate-drive plate, draw and support the support of gate-drive plate from insulated gate bipolar transistor component
Bar assembly, and the Support Capacitor on base plate, wherein,
Insulated gate bipolar transistor component includes the first insulated gate bipolar transistor element on the base plate, second exhausted
Edge grid bipolar transistor device, copper bar component electrical connection insulated gate bipolar transistor component, Support Capacitor, support bar component
And as the input and output end of half bridge arm unit；
First insulated gate bipolar transistor element draws including the first gate lead, the first emitter stage pin and the first colelctor electrode
Pin,
Second insulated gate bipolar transistor element includes the second gate lead, the second emitter stage pin, the second colelctor electrode pin,
Support bar component including one end be connected respectively in the first gate lead, the first colelctor electrode pin, the second gate lead,
Second emitter stage pin and the other end are all connected to first support bar, second support bar, the 3rd support bar, of gate-drive plate
Four support bars, and one end is connected to the of the first emitter stage pin or second colelctor electrode pin other end connection gate-drive plate
Five support bars,
Support Capacitor includes being provided with the first capacitance component of the first electric capacity, being provided with the second capacitance component of the second electric capacity,
Copper bar component includes being connected to a terminal of second support bar and the first electric capacity and for external direct current power supply positive electrode
The first copper bar, be connected to a terminal of the 4th support bar and the second electric capacity and for the second of external direct current power supply negative electrode
Copper bar, is connected to the 5th support bar and is connected in the second colelctor electrode pin and the first emitter stage pin not directly with the 5th
Support bar be connected it is pin and for the 3rd copper bar as the first output end, and connect respectively the first electric capacity another
Terminal and the second electric capacity another terminal and for the 4th copper bar as the second output end.
2. inversion module according to claim 1, it is characterised in that it is double that first capacitance component is located at the first insulated gate
Bipolar transistor element is away from the side of the second insulated gate bipolar transistor element, and it is exhausted that second capacitance component is located at second
, away from the side of the first insulated gate bipolar transistor element, base plate is parallel to gate-drive for edge grid bipolar transistor device
Plate.
3. inversion module according to claim 1, it is characterised in that first copper bar, the second copper bar, the 3rd copper bar,
4th copper bar stacked arrangement, insulating barrier is set between adjacent copper bar.
4. inversion module according to claim 3, it is characterised in that copper bar component successively by the second copper bar, the 3rd copper bar,
The order arrangement of the 4th copper bar, the first copper bar, the second copper bar is closest to base plate.
5. inversion module according to any one of claim 1 to 4, it is characterised in that first capacitance component includes
For and be unified into some capacity cells of first electric capacity, and some capacity cell hoops for constituting first electric capacity are existed
The first electric capacity hoop on base plate,
Second capacitance component includes being used for and being unified into some capacity cells of second electric capacity, and will constitute described the
Second electric capacity hoop of some capacity cell hoops of two electric capacity on base plate.
6. inversion module according to claim 5, it is characterised in that first capacitance component includes being arranged on its electric capacity
The first rubber blanket between element and the first electric capacity hoop and the second rubber blanket being arranged between capacity cell and base plate, and/
Or
Second capacitance component includes the first rubber blanket and the setting that are arranged between its capacity cell and the second electric capacity hoop
The second rubber blanket between capacity cell and base plate.
7. inversion module according to claim 6, it is characterised in that the first ring is provided between the second rubber blanket and base plate
Oxygen glass-cloth board.
8. inversion module according to any one of claim 1 to 4, it is characterised in that the inversion module also includes setting
The heat conduction put the temperature relay of on base plate and external control unit and be arranged between temperature relay and base plate is exhausted
Edge rubber film, the temperature relay is used to send early warning to control unit when the baseplate temp for detecting is higher than preset value
Signal.
9. inversion module according to claim 8, it is characterised in that the inversion module also includes being located at temperature relay
Away from base plate side, marginal portion be fixed on the second epoxy that temperature relay is pressed to base plate on base plate and center section
Fabric swatch.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510013911.2A CN104617784B (en) | 2015-01-12 | 2015-01-12 | A kind of inversion module |
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| CN201510013911.2A CN104617784B (en) | 2015-01-12 | 2015-01-12 | A kind of inversion module |
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| CN104617784A CN104617784A (en) | 2015-05-13 |
| CN104617784B true CN104617784B (en) | 2017-07-07 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102624205A (en) * | 2012-04-16 | 2012-08-01 | 株洲南车时代电气股份有限公司 | Power module of converter |
| CN103066862A (en) * | 2012-12-26 | 2013-04-24 | 株洲南车时代电气股份有限公司 | High-pressure half-bridge insulated gate bipolar transistor (IGBT) inverse module |
| CN103078471A (en) * | 2011-10-26 | 2013-05-01 | 中国北车股份有限公司大连电力牵引研发中心 | Power module and current converter |
-
2015
- 2015-01-12 CN CN201510013911.2A patent/CN104617784B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103078471A (en) * | 2011-10-26 | 2013-05-01 | 中国北车股份有限公司大连电力牵引研发中心 | Power module and current converter |
| CN102624205A (en) * | 2012-04-16 | 2012-08-01 | 株洲南车时代电气股份有限公司 | Power module of converter |
| CN103066862A (en) * | 2012-12-26 | 2013-04-24 | 株洲南车时代电气股份有限公司 | High-pressure half-bridge insulated gate bipolar transistor (IGBT) inverse module |
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| CN104617784A (en) | 2015-05-13 |
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