CN104617120B - Back side illumination image sensor - Google Patents
Back side illumination image sensor Download PDFInfo
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- CN104617120B CN104617120B CN201510083012.XA CN201510083012A CN104617120B CN 104617120 B CN104617120 B CN 104617120B CN 201510083012 A CN201510083012 A CN 201510083012A CN 104617120 B CN104617120 B CN 104617120B
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Abstract
A kind of back side illumination image sensor, including：Pel array, the pel array include multiple pixels of array arrangement, and the pixel includes photodiode area, and the photodiode area includes the charge collection region of n-type doping；Bulge-structure, its semiconductor surface corresponding above the charge collection region, the subregion at all n-type doping regions of bulge-structure or close top is n-type doping region, and the bulge-structure is suitable for extracting the spilling electric charge in the charge collection region.The back side illumination image sensor performance improves.
Description
Technical field
The present invention relates to field of image sensors, more particularly to a kind of back side illumination image sensor.
Background technology
Imaging sensor can be divided into ccd image sensor and cmos image according to photo-sensitive cell and the difference of light sensitivity principles
Sensor.Cmos image sensor is since its compatibility is preferable, cost-effective be widely adopted is adopted in consumer electronics, medical image
Collection and monitoring field.
Cmos image sensor includes：Pel array (pixel array), pel array includes the picture of some array arrangements
Plain unit (pixel cell or pixel unit), single pixel unit often use 3T (3 transistor) or 4T (4 transistor)
Structure.
In cmos image sensor, it is back-illuminated type (Backside illuminated) imaging sensor to have one kind.It is existing
In the pel array of back side illumination image sensor, the opto-electronic conversion of single pixel unit turns element and receives extraneous light, passes through light
Electricity is converted into carrier (electronics or hole, usually electronics), by transfering transistor (TX) by electric charge transfer to floating
Diffusion region (FD), reset transistor are used for the electric charge for resetting floating diffusion region；Floating diffusion region meets the grid (gate that source follows pipe (SF)
Terminal), source follows the drain electrode (drain terminal) of pipe to connect voltage signal, and source class exports one and floating diffusion region electricity
The relevant electric signal in position, by follow-up row gate tube, gates this and is about to relevant electric signal output to bit line (BL).It is existing
Floating diffusion region is normally at the inside of the epitaxial layer of substrate interior or substrate surface in technology, on the basis for meeting manufacturing process
On, opto-electronic conversion can be caused to turn that there is higher parasitic capacitance between region and floating diffusion region；In addition, work as single pixel unit
Opto-electronic conversion turn region when the electric charge of collection is excessive, it may occur that to the photoelectric conversion region domain migration of neighborhood pixels unit
Bloom (blooming) process, influence the image variants of adjacent pixel unit.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of back side illumination image sensor and forming method thereof, to prevent back-illuminated type figure
Bloom phenomenon occurs for picture sensor, improves the performance of imaging sensor.
To solve the above problems, the present invention provides a kind of back side illumination image sensor, including：
Pel array, the pel array include multiple pixels of array arrangement, and the pixel includes photodiode region
Domain, the photodiode area include the charge collection region of n-type doping；
Bulge-structure, its semiconductor surface corresponding above the charge collection region, all N of bulge-structure
Type doped region is n-type doping region close to the subregion at top, and the bulge-structure is suitable for extracting the charge-trapping
Spilling electric charge in region.
Optionally, the bulge-structure is monocrystalline silicon material or polysilicon material.
Optionally, positive pressure is added in the n-type doping region of the bulge-structure.
Optionally, the bulge-structure is higher by 0.1 μm~1.0 μm of the corresponding semiconductor surface of the charge collection region.
Optionally, during all n-type doping region of the bulge-structure, the n-type doping region also extends to convex at the same time
Play the subregion below structure.
Optionally, described image sensor further includes：
P-type doped region, it is between the charge collection region and the n-type doping region.
Optionally, described image sensor further includes：
N-type channel region, between the n-type doping region and the charge collection region, and connects the two
Region；
P-type doped region, positioned at the periphery of the N-type channel region, for limiting the consumption of the N-type channel region
Voltage to the greatest extent.
Optionally, the p-type doped region includes the first p-type doped region and the second p-type doped region, the first P
Type doped region is located in the Semiconductor substrate below the bulge-structure, and the second p-type doped region is located at the N-type and mixes
Between miscellaneous area and the photodiode photosensitive area.
Optionally, the doping concentration scope in the n-type doping region is 1E16atom/cm3~1E18atom/cm3。
Optionally, the width range of the bulge-structure is 0.1 μm~0.5 μm.
Compared with prior art, technical scheme has the following advantages：
In technical scheme, by being set in back side illumination image sensor above the charge collection region
The subregion at the bulge-structure of corresponding semiconductor surface, all n-type doping regions of bulge-structure or close top
For n-type doping region, the bulge-structure is suitable for extracting the spilling electric charge in the charge collection region, so as to prevent back-illuminated type
There is bloom phenomenon in imaging sensor, improves the performance of back side illumination image sensor.
Brief description of the drawings
Fig. 1 is the back side illumination image sensor schematic perspective view that the embodiment of the present invention is provided；
Fig. 2 obtains for back side illumination image sensor shown in Fig. 1 along A-A chain-dotted lines and vertical semiconductor substrate top surface cutting
Diagrammatic cross-section；
Fig. 3 obtains for back side illumination image sensor shown in Fig. 1 along B-B chain-dotted lines and vertical semiconductor substrate top surface cutting
Diagrammatic cross-section；
Fig. 4 is another back side illumination image sensor schematic diagram that another embodiment of the present invention is provided；
Fig. 5 is another back side illumination image sensor schematic diagram that another embodiment of the present invention is provided.
Embodiment
There are the defects of bloom for existing back side illumination image sensor.And the reason for described image bloom is due to incidence
When the intensity of light is larger, the photodiode of pixel produces substantial amounts of photo-generated carrier, causes part photo-generated carrier to overflow,
Float in pixel unit region, become the photo-generated carrier of floating, interference is produced to the electric signal of pixel, is floated so as to produce image
The problem of dissipating, so as to cause imaging sensor image blur.
For this reason, the present invention provides a kind of back side illumination image sensor, the back side illumination image sensor includes pel array,
The pel array includes multiple pixels of array arrangement, and the pixel includes photodiode area, the photodiode
Region includes the charge collection region of n-type doping；Bulge-structure, its semiconductor table corresponding above the charge collection region
The subregion at face, all n-type doping regions of bulge-structure or close top is n-type doping region, the raised knot
Structure is suitable for extracting the spilling electric charge in the charge collection region.The back side illumination image sensor can prevent back side illumination image
There is bloom phenomenon in sensor, improves the performance of back side illumination image sensor.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
The embodiment of the present invention provides a kind of back side illumination image sensor, incorporated by reference to referring to figs. 1 to Fig. 3.Wherein, Fig. 1 is the back of the body
The schematic perspective view of illuminated image sensor, Fig. 2 are vertically led along A-A chain-dotted lines and partly for back side illumination image sensor shown in Fig. 1
The diagrammatic cross-section that the 100 upper surface cutting of body substrate obtains, Fig. 3 for back side illumination image sensor shown in Fig. 1 along B-B chain-dotted lines simultaneously
The diagrammatic cross-section that the 100 upper surface cutting of vertical semiconductor substrate obtains.
The back side illumination image sensor includes Semiconductor substrate 100.Semiconductor substrate 100 is photosensitive with photodiode
Area 110 (as shown in Figure 2).The top of photodiode photosensitive area 110 has grid (as shown in Figure 1), and the grid includes first
Part 121 and Part II 122.
In the present embodiment, Semiconductor substrate 100 is silicon substrate.In other embodiments of the invention, Semiconductor substrate 100
Can also be germanium substrate, germanium silicon substrate, III-group Ⅴ element compound substrate, silicon carbide substrates or its laminated construction substrate, or absolutely
Silicon substrate on edge body, can also be that well known to a person skilled in the art other suitable semiconductive material substrates.
In the present embodiment, the material of Part I 121 and Part II 122 is polysilicon in grid, and first
Points 121 and Part II 122 can be integrally formed at the same time, however, it is possible to only carry out n-type doping to Part I 121.Whole grid
The flat shape of pole is in irregular polygon (as shown in Figure 1).
The back side illumination image sensor further includes pel array (not marking), and the pel array includes array arrangement
Multiple pixels (not marking), the pixel includes photodiode area, and the photodiode area includes above-mentioned photoelectricity
Diode photosensitive area 110.
Under normal conditions, above-mentioned photodiode photosensitive area 110 is the charge collection region of n-type doping.I.e. described photoelectricity
Diode area includes the charge collection region of n-type doping.
The N-type region of PN junction included by the charge collection region that is, photodiode of the n-type doping, for collecting electricity
Lotus.
Meanwhile photodiode area further includes p type island region corresponding with the charge collection region of n-type doping.In fact, P
Type area can surround whole N-type region, and in other words, whole N-type region is located inside p type island region.Therefore, in the electric charge of the n-type doping
It is p type island region around collecting zone.And then understand, the charge collection region of the n-type doping is to making photodiode area
There are p type island region (the follow-up abbreviation charge collection region of charge collection region of the n-type doping) between semiconductor surface.
The pixel can also include low concentration N doped regions 130, and positioned at photodiode photosensitive area 110 and low dense
Spend the transfering transistor between N doped regions 130.In addition, the pixel can also include other transistor (not shown).
In Fig. 2, separated between photodiode photosensitive area 110 and low concentration N doped regions 130 with dotted line (not marking), with
Show difference.Therefrom it can be seen that, the Part I 121 of grid is located at the top of photodiode photosensitive area 110, and has small part position
Above low concentration N doped regions 130.
The back side illumination image sensor further includes the floating diffusion region 140 positioned at 130 upper surface of low concentration N doped regions,
Floating diffusion region 140 is in raised column structure.Floating diffusion region 140 is located substantially in 130 upper surface of low concentration N doped regions
Centre.Floating diffusion region 140 can be electrically connected with other circuits, be electrically connected so that low concentration N doped regions 130 be realized with other circuits
Connect.
It should be noted that in other embodiments of the invention, floating diffusion region can extend to column knot shown in Fig. 2
Exterior portion subregion below structure, i.e. floating diffusion region not only include column structure region, further include column structure location
In part semiconductor below domain.
As shown in Figure 1, four pixels share a low concentration N doped region 130, that is, share a floating diffusion region
140.In i.e. every four pixels in the row arrangement of two rows two, the Part I 121 of four grids be centered around jointly one it is low
130 periphery of concentration N doped regions.The grid Part I 121 of transfering transistor is towards low concentration N doped regions in four pixels
The floating diffusion region 140 of 130 upper surfaces.
In the present embodiment, floating diffusion region 140 can be monocrystalline silicon material or polysilicon material.
Bulge-structure 150 is further included incorporated by reference to reference to figure 1 and Fig. 3, the back side illumination image sensor.Bulge-structure 150
100 upper surface of semiconductor corresponding above the charge collection region.That is, bulge-structure 150 can be produced on respectively
Photodiode photosensitive area 110 and 100 upper surface of Semiconductor substrate between them.
Bulge-structure 150 is suitable for the spilling electric charge for extracting charge collection region described in photodiode photosensitive area 110.By
It is suitable for the spilling electric charge for extracting charge collection region described in photodiode photosensitive area 110 in bulge-structure 150, it is thus possible to
Prevent the pixel of the back side illumination image sensor from bloom phenomenon occurs, so as to improve the back side illumination image sensor
Performance.
In the present embodiment, bulge-structure 150 can also be monocrystalline silicon material or polysilicon material.And it is possible in shape
During into floating diffusion region 140, while form bulge-structure 150.But floating diffusion region 140 and bulge-structure 150 can also divide
Do not formed.
In the present embodiment, bulge-structure 150 can have the n-type doping from top to bottom concentration in stairway degression.
That is the top of bulge-structure 150 can have relatively most dense n-type doping, the bottommost of bulge-structure 150 can have
There is relatively most light n-type doping, and the n-type doping concentration between them can be in gradually change.This doping situation contributes to
Bulge-structure 150 extracts the spilling electric charge (the spilling electric charge that i.e. charge collection region produces) in photodiode photosensitive area 110.
It should be noted that in other embodiments of the invention, bulge-structure can be only close to the subregion at top
For n-type doping region, wherein, the subregion at the close top can account for the 1/3 to 3/4 of bulge-structure integral thickness, tool
Body is such as 1/3,1/2,2/3 or 3/4.
Please continue to refer to Fig. 3, the back side illumination image sensor further includes the first p-type doped region 170, and the first p-type is mixed
Miscellaneous region 170 is located in the Semiconductor substrate 100 of the lower section of bulge-structure 150.
In the present embodiment, the doping concentration of the first p-type doped region 170 may range from 1E16atom/cm3~
1E18atom/cm3.First p-type doped region 170 doping consider be ensure by photodiode photosensitive area 110 carry out every
From preventing that normal optical charge is entered in bulge-structure 150 when not carrying out spilling charge extraction operation.At the same time, it is necessary to protect
The formation for demonstrate,proving the first p-type doped region 170 does not interfere with other structures.Therefore, the present embodiment is by the first p-type doped region 170
Doping concentration scope be arranged on 1E16atom/cm3~1E18atom/cm3。
In the present embodiment, width W (as shown in Figure 3) scope of bulge-structure 150 is 0.1 μm~0.5 μm.Bulge-structure
150 width W influences the size of bulge-structure 150.The width W of bulge-structure 150 is convex to ensure more than 0.1 μm
The area for playing structure 150 can be larger, ensures that bulge-structure 150 can be with the conductive structure (conductive structure that subsequently makes
For applying voltage) good contact is formed, to be conducive to the subsequently extraction to overflowing electric charge.Meanwhile half between each pixel
100 white space of conductor substrate (white space refers to the region of non-making devices) is smaller, and is arranged on as far as possible in bulge-structure 150
In corresponding white space, therefore, the width W of bulge-structure 150 is set below 0.5 μm, to better ensure that bulge-structure
150 making does not interfere with other structures, such as does not influence the light receiving efficiency of photodiode photosensitive area 110, and prevents convex
Play structure 150 and produce larger parasitic capacitance.
In the present embodiment, the altitude range of bulge-structure 150 can be 0.1 μm~1.0 μm.The height of bulge-structure 150
It is to influence an important factor for it is to overflowing charge extraction ability.If the height of bulge-structure 150 is too big, follow-up added positive pressure without
Method is preferably acted in the PN junction being made of the first p-type doped region 170 and bulge-structure 150, therefore, extracts effect not
It is good.Also, if the height of bulge-structure 150 is too big, the manufacture difficulty increase of bulge-structure 150, to mixing for bulge-structure 150
General labourer's skill is also difficult to.Therefore, it is necessary to control the height of bulge-structure 150 below 1.0 μm.But if bulge-structure
150 height is too small, and the electric field that voltage is formed can act directly on photodiode photosensitive area 110, so as to cause do not going out
In the case of now overflowing electric charge, the normal photoelectron in photodiode photosensitive area 110 is still by " suction " the first p-type doped region
The situation in domain 170, causes dark current to rise.Therefore, the height of bulge-structure 150 is set more than 0.1 μm.
Please continue to refer to Fig. 3, the back side illumination image sensor further includes n-type doping region 160 (can also reference chart
1), n-type doping region 160 is located in Semiconductor substrate 100 and connection bump structure 150, and in other words, n-type doping region 160 is
Bulge-structure 150 extends below the part of Semiconductor substrate 100.Since n-type doping region 160 is located at Semiconductor substrate
100 interior and connection bump structures 150, therefore, n-type doping region 160 can expand the scope of bulge-structure 150.N-type doping area
Domain 160 and bulge-structure 150 are as the N-type semiconductor region in PN junction, and the first p-type doped region 170 is then the P in PN junction
Type semiconductor regions.This PN junction is turned in bulge-structure 150 plus positive pressure, so that photodiode photosensitive area 110 is produced
Overflow electric charge to jump over the first p-type doped region 170, and reach n-type doping region 160, and then added by bulge-structure 150 just
(electricity) pressure is taken away.
In Fig. 3, separated between bulge-structure 150 and n-type doping region 160 with dotted line (not marking), to show difference.
In the present embodiment, n-type doping region 160 is located at 150 bottom of bulge-structure, also, n-type doping region 160 is by
One p-type doped region 170 surrounds.In this case, 170 scope of the first p-type doped region is larger, overflows electric charge and is easily accessible
First p-type doped region 170 and be pumped.
In the present embodiment, the thickness range of the first p-type doped region 170 is 0.5 μm~3.0 μm.By the present embodiment institute
The back side illumination image sensor of offer, therefore, the thickness of whole Semiconductor substrate 100 are generally also smaller, for example, 3.5 μm~
4.0 μm, at this time, setting the thickness range of the first p-type doped region 170 can ensure that the first p-type is adulterated for 0.5 μm~3.0 μm
Region 170 can ensure that photodiode photosensitive area 110 and n-type doping region 160 separate in enough scopes.Also, 0.5
μm~3.0 μm of thickness range in, whole first p-type doped region 170 is larger, so as to ensure photodiode photosensitive area 110
In normal optical charge do not enter n-type doping region 260.
In the present embodiment, the distance range of the first p-type doped region 170 to 150 bottom of bulge-structure is 0 μm, i.e. the first P
Type doped region 170 extends to 150 depth below of bulge-structure (tool directly since the upper surface of Semiconductor substrate 100
Body depth is the thickness of the first p-type doped region 170).It should be noted that in other embodiments of the invention, the first p-type
With a certain distance from doped region 170 can also have from 150 bottom of bulge-structure, this distance can be 0 μm~0.5 μm, only need to protect
PN junction can be formed with n-type doping region 160 and bulge-structure 150 by demonstrate,proving the first p-type doped region 170.
In the present embodiment, the thickness range in n-type doping region 160 is 0.05 μm~0.50 μm.N-type doping region 160 is
The N-type semiconductor region of PN junction is formed with the first p-type doped region 170, on the one hand the bottom of it and bulge-structure 150 directly connects
Connect, on the other hand, at least its bottom is connected with the first p-type doped region 170.Therefore, in order to ensure the first p-type doped region
170 with larger thickness (the first p-type doped region 170 with larger thickness be conducive to protect normal optical charge), n-type doping area
The thickness control in domain 160 is in less scope, and therefore, the thickness in n-type doping region 160 is usually arranged as being less than 0.50 μm.
But on the other hand, n-type doping region 160 is also required to have certain thickness, to ensure that corresponding PN junction has higher electricity
Ducting capacity is flowed, therefore, the thickness in n-type doping region 160 is set more than 0.05 μm.
In the present embodiment, the doping concentration scope in n-type doping region 160 is 1E16atom/cm3~1E18atom/cm3.This
Doping concentration scope is equal with the doping concentration scope of the first p-type doped region 170.Therefore, 160 and the first P of n-type doping region
The doping concentration of type doped region 170 is of substantially equal, so that the PN junction formed between ensureing them is relatively stable.
In the present embodiment, the width in n-type doping region 160 is 0.05 μm bigger than the width W of bulge-structure 150~and 0.3 μm.N
Type doped region 160 is wider than bulge-structure 150, helps to increase the size of above-mentioned PN junction, overflows charge extraction energy so as to improve
Power.But n-type doping region 160 is directly connected, it is necessary to which N-type is mixed greatly very much with photodiode photosensitive area 110 in order to prevent
The width control system in miscellaneous region 160 within the specific limits, therefore, sets the width in n-type doping region 160 than bulge-structure 150
Width is 0.05 μm big~and 0.3 μm.
, can be in bulge-structure 150 plus adjustable positive pressure in the present embodiment.The size of the positive pressure can be 0.5V~
3.0V.The size of the positive pressure, which equally allows for not only to have guaranteed to extract by bulge-structure 150, overflows electric charge, but also does not influence
Normal electric charge in photodiode photosensitive area 110.
In the present embodiment, the first p-type doped region 170 is directly extended downwardly since 100 upper surface of Semiconductor substrate, and
And first p-type doped region 170 it is adjacent with photodiode photosensitive area 110.This set can to add in bulge-structure 150
Overflowed during corresponding positive pressure, produced by photodiode photosensitive area 110 electric charge just can by the first p-type doped region 170 " suction ",
Overflow electric charge and flow into the first p-type doped region 170 under electrical potential difference effect, and N is pumped to from the first p-type doped region 170
Type doped region 160, further reaches bulge-structure 150 and is pumped.And due to only forming a first p-type doped region
Domain 170, manufacture craft is simple, and process costs are low.
In the back side illumination image sensor that the present embodiment is provided, by setting bulge-structure 150, and and bulge-structure
The first p-type doped region 170 and n-type doping region 160 in 150 underlying semiconductor substrates 100 so that the back side illumination image
Sensor has the ability that can be extracted and overflow electric charge, so that the back side illumination image sensor performance improves.
In the back side illumination image sensor that the present embodiment is provided, in the pixel groups of the four pixels composition arranged in two rows two
In conjunction, respectively there are a bulge-structure 150 in the both sides of the combination of pixels, as shown in Figure 1.Analyzed more than, a protrusion
Structure 150 means that overflows a charge extraction position.And averagely get off, in the present embodiment, each two pixel correspondence one is convex
Structure 150 is played, and 150 position distribution of each bulge-structure is uniform, and therefore, the back side illumination image sensor can preferably gram
Bloom phenomenon is taken, performance is largely increased.
It should be noted that in other embodiments of the invention, in the pixel of the four pixels composition arranged in two rows two
In combination, a bulge-structure can also be each provided with four sides of the combination of pixels, and set below the bulge-structure
Put the structures such as the first p-type doped region and n-type doping region and overflow charge extraction system to be formed.At this time, one is corresponded to per pixel
A bulge-structure, and each bulge-structure position distribution is uniform and intensive, and therefore, the back side illumination image sensor can be more preferable
Ground overcomes bloom phenomenon.In other embodiment of the present invention, the combination of pixel can not also be same, such as two pixels
A floating diffusion region is shared, forms a combination of pixels, or each pixel individually has a floating diffusion region.At this time,
One or more can also be correspondingly made between each combination of pixels or each pixel by bulge-structure, the first p-type
The charge extraction system that the structure such as doped region and n-type doping region is formed.This is not limited by the present invention.
Another embodiment of the present invention provides another back side illumination image sensor, please refers to Fig.4.It illustrate only institute in Fig. 4
The part section structure of back side illumination image sensor is stated, and is understood with reference to figure 3, Fig. 4 exists for the back side illumination image sensor
The diagrammatic cross-section of bulge-structure and its peripheral position.More structure contents in relation to the present embodiment back side illumination image sensor can
With reference to previous embodiment corresponding contents.
Please refer to Fig.4, the back side illumination image sensor includes Semiconductor substrate 200.Semiconductor substrate 200 has photoelectricity
Diode photosensitive area (does not mark).There is grid 220 above photodiode photosensitive area.
In the present embodiment, Semiconductor substrate 200 is silicon substrate.In other embodiments of the invention, Semiconductor substrate 200
Can also be germanium substrate, germanium silicon substrate, III-group Ⅴ element compound substrate, silicon carbide substrates or its laminated construction substrate, or absolutely
Silicon substrate on edge body, can also be that well known to a person skilled in the art other suitable semiconductive material substrates.
The back side illumination image sensor further includes pel array (not shown), and the pel array includes array arrangement
Multiple pixels (Fig. 4 shows the part-structure of a pixel), the pixel include above-mentioned photodiode photosensitive area.The picture
Element further includes floating diffusion region (not shown) and transfering transistor (grid 220 is a part for the transfering transistor).In addition,
The pixel further includes other transistor (not shown).
In the present embodiment, multiple pixels can share a floating diffusion region or a picture
Element has a floating diffusion region.And it is possible to as in the foregoing embodiment, every four in the described of two rows two row arrangement
Pixel shares a floating diffusion region, and the floating diffusion region is in the form of a column structure (not shown).
In the present embodiment, the column structure can be monocrystalline silicon material or polysilicon material.
Please refer to Fig.4, the back side illumination image sensor further includes bulge-structure 250.Bulge-structure 250 is above electric charge
The corresponding semiconductor surface of collecting zone, that is, 200 surface of Semiconductor substrate.Bulge-structure 250 is suitable for extracting the electric charge receipts
Collect the spilling electric charge in region, that is, be suitable for extracting the spilling electric charge in photodiode photosensitive area.Since bulge-structure 250 is suitable for
Extract the spilling electric charge in photodiode photosensitive area, it is thus possible to prevent the pixel of the back side illumination image sensor from occurring to float
Phenomenon is dissipated, so as to improve the performance of the back side illumination image sensor.
In the present embodiment, bulge-structure 250 can also be monocrystalline silicon material or polysilicon material.And it is possible in shape
During into the column structure, while form bulge-structure 250.But the column structure and bulge-structure 250 can also be distinguished
Formed.
In the present embodiment, bulge-structure 250 has the n-type doping in stairway degression from top to bottom concentration.Namely
Say, the top of bulge-structure 250 has relatively most dense n-type doping, and the bottommost of bulge-structure 250 is with relatively most light
N-type doping, and the n-type doping concentration between them is in gradually change.This doping situation contributes to bulge-structure 250 to extract light
Spilling electric charge in electric diode photosensitive area.
It should be noted that in other embodiments of the invention, when all n-type doping regions of the bulge-structure
When, the n-type doping region also extends to the subregion below bulge-structure at the same time.
Please continue to refer to Fig. 4, the back side illumination image sensor further includes the first p-type doped region 270, and the first p-type is mixed
Miscellaneous region 270 is located in the Semiconductor substrate 200 of the lower section of bulge-structure 250.
In the present embodiment, the doping concentration of the first p-type doped region 270 may range from 1E16atom/cm3~
1E18atom/cm3.First p-type doped region 270 doping consider be ensure by the photodiode photosensitive area carry out every
From preventing that normal optical charge is entered in bulge-structure 250 when not carrying out spilling charge extraction operation.At the same time, it is necessary to protect
The formation for demonstrate,proving the first p-type doped region 270 does not interfere with other structures.Therefore, the present embodiment is by the first p-type doped region 270
Doping concentration scope be arranged on 1E16atom/cm3~1E18atom/cm3。
In the present embodiment, the width of bulge-structure 250 (does not mark) scope as 0.1 μm~0.5 μm.Bulge-structure 250
Size of the widths affect to bulge-structure 250.The width of bulge-structure 250 is more than 0.1 μm, to ensure bulge-structure
250 area can be larger, so as to ensure that bulge-structure 250 can form good contact with conductive structure, after being conducive to
The continuous extraction to overflowing electric charge.Meanwhile (white space refers to non-maker to 200 white space of Semiconductor substrate between each pixel
The region of part) it is smaller, and bulge-structure 250 needs to be arranged in corresponding white space, therefore, sets bulge-structure 250
Width to ensure that the making of bulge-structure 250 does not interfere with other structures, such as does not influence photodiode below 0.5 μm
The photosensitive area of photosensitive area, and prevent bulge-structure 250 from producing larger parasitic capacitance.
In the present embodiment, the altitude range of bulge-structure 250 can be 0.1 μm~1.0 μm.The height of bulge-structure 250
It is to influence an important factor for it is to overflowing charge extraction ability.If the height of bulge-structure 250 is too big, follow-up added positive pressure without
Method is preferably acted in the PN junction being made of the first p-type doped region 270 and bulge-structure 250, therefore, extracts effect not
It is good.Also, if the height of bulge-structure 250 is too big, the manufacture difficulty increase of bulge-structure 250, to mixing for bulge-structure 250
General labourer's skill is also difficult to.Therefore, it is necessary to control the height of bulge-structure 250 below 1.0 μm.But if bulge-structure
250 height is too small, and the electric field that voltage is formed can act directly on photodiode photosensitive area, so as to cause to overflow no
In the case of going out electric charge, the normal photoelectron in photodiode photosensitive area is still by " suction " first p-type doped region 270
Situation, causes dark current to rise.Therefore, the height of bulge-structure 250 is set more than 0.1 μm.
Please continue to refer to Fig. 4, the back side illumination image sensor further includes n-type doping region 260, n-type doping region 260
The interior and connection bump structure 250 positioned at Semiconductor substrate 200.In bulge-structure 250 plus positive pressure, it will cause photodiode sense
The spilling electric charge that light area produces is jumped over the first p-type doped region 270, and reaches n-type doping region 260, and then by bulge-structure
Positive voltage is taken away added by 250.
In the present embodiment, n-type doping region 260 is located at 250 bottom part down of bulge-structure.And the first p-type doped region 270
Positioned at 260 bottom of n-type doping region.
It should be noted that in other embodiments of the invention, n-type doping region can also extend partially into raised knot
The subregion of structure bottom, such as bulge-structure bottom accounts for whole height a quarter or 1/5th part also serves as N-type
A part for doped region.
In the present embodiment, the thickness range of the first p-type doped region 270 is 0.5 μm~3.0 μm.By the present embodiment institute
The back side illumination image sensor of offer, therefore, the thickness of whole Semiconductor substrate 200 are generally also smaller, for example, 3.5 μm~
4.0 μm, at this time, setting the thickness range of the first p-type doped region 270 can ensure that the first p-type is adulterated for 0.5 μm~3.0 μm
Region 270 can ensure that the normal optical charge in the photodiode photosensitive area does not enter n-type doping area in enough scopes
Domain 260.
In the present embodiment, the distance range of the first p-type doped region 270 to 250 bottom of bulge-structure is exactly n-type doping
The thickness range in region 260.I.e. the first p-type doped region 270 extends to bulge-structure since 260 bottom of n-type doping region
250 depth below (specific depth is the thickness of the first p-type doped region 270).
It should be noted that in other embodiments of the invention, the first p-type doped region 270 can also be tied from protrusion
250 bottom of structure has a certain distance, this distance can be 0 μm~0.5 μm, need to only ensure that the first p-type doped region 270 can be with
N-type doping region 260 and bulge-structure 250 form PN junction.That is, only need to ensure n-type doping region 260 and the at this time
One p-type doped region 270 is adjacent.
In the present embodiment, the thickness range in n-type doping region 260 is 0.05 μm~0.50 μm.N-type doping region 260 is
The N-type semiconductor region of PN junction is formed with the first p-type doped region 270, on the one hand the bottom of it and bulge-structure 250 directly connects
Connect, on the other hand, at least its bottom is connected with the first p-type doped region 270.Therefore, in order to ensure the first p-type doped region
270 with larger thickness (the first p-type doped region 270 with larger thickness be conducive to protect normal optical charge), n-type doping area
The thickness control in domain 260 is in less scope, and therefore, the thickness in n-type doping region 260 is usually arranged as being less than 0.50 μm.
But on the other hand, n-type doping region 260 is also required to have certain thickness, to ensure that corresponding PN junction has higher electricity
Ducting capacity is flowed, therefore, the thickness in n-type doping region 260 is set more than 0.05 μm.
In the present embodiment, the doping concentration scope in n-type doping region 260 is 1E16atom/cm3~1E18atom/cm3.This
Doping concentration scope is equal with the doping concentration scope of the first p-type doped region 270.Therefore, 260 and the first P of n-type doping region
The doping concentration of type doped region 270 is of substantially equal, so that the PN junction performance formed between ensureing them is relatively stable.
In the present embodiment, the width in n-type doping region 260 is 0.05 μm~0.3 μm bigger than the width of bulge-structure 250.N-type
Doped region 260 is wider than bulge-structure 250, helps to increase the size of above-mentioned PN junction, overflows charge extraction ability so as to improve.
But n-type doping region 260 is too big and directly adjacent with photodiode photosensitive area, it is necessary to by n-type doping region in order to prevent
260 width control system within the specific limits, therefore, sets the width in n-type doping region 260 bigger than the width of bulge-structure 250
0.05 μm~0.3 μm.
, can be in bulge-structure 250 plus adjustable positive pressure in the present embodiment.The size of the positive pressure can be 0.5V~
3.0V.The size of the positive pressure, which equally allows for not only to have guaranteed to extract by bulge-structure 250, overflows electric charge, but also does not influence
Normal electric charge in photodiode photosensitive area.
Please continue to refer to Fig. 4, the back side illumination image sensor further includes the second p-type doped region 280, and the second p-type is mixed
Miscellaneous region 280 is located between n-type doping area 260 and the photodiode photosensitive area, and the second p-type doped region 280 leans on
Nearly Semiconductor substrate upper surface.
In the present embodiment, the doping concentration scope of the second p-type doped region 280 is 1E16atom/cm3~1E18atom/
cm3.The doping concentration scope of second p-type doped region 280 is equal with the doping concentration scope of the first p-type doped region 270, because
This, the specific doping concentration of the second p-type doped region 280 and the specific doping concentration substantially phase of the first p-type doped region 270
Deng, this is because, both effects, which are provided to extract, overflows electric charge, and in 1E16atom/cm3~1E18atom/cm3Mix
In miscellaneous concentration range, it can preferably meet to require accordingly.
In the present embodiment, the thickness range of the second p-type doped region 280 is 0 μm~0.5 μm.Also, above know
Road, the thickness of the second p-type doped region 280 down extend since the upper surface of Semiconductor substrate, it is seen then that the second p-type is adulterated
Region 280 is concentrated on close to the position of Semiconductor substrate upper surface.Second p-type doped region 280 also with 260 phase of n-type doping area
Even, so as to form another PN junction, electric charge is overflowed for extracting.
In the present embodiment, since the second p-type doped region 280 and the first p-type doped region 270 are located at Semiconductor substrate
Upper-lower position, can also form a passage (not marking) between them.The potential of this passage is higher than the first p-type doped region 270
With the second p-type doped region 280 and potential, therefore, overflow electric charge if produced, this this overflow electric charge can preferentially from this passage to
Up to n-type doping region 260, and further the positive voltage added by bulge-structure 250 is taken away.
It should be noted that in other embodiments of the invention, one or more p-type doped regions, institute can also be included
P-type doped region is stated between the charge collection region and the n-type doping region.
In the back side illumination image sensor that the present embodiment is provided, by setting bulge-structure 250, and and bulge-structure
The first p-type doped region 270, the second p-type doped region 280 and n-type doping region in 250 underlying semiconductor substrates 200
260 so that the back side illumination image sensor has the ability that can be extracted and overflow electric charge, so that the back side illumination image passes
Sensor performance improves.
Another embodiment of the present invention provides another back side illumination image sensor, refer to Fig. 5.It illustrate only institute in Fig. 5
The part section structure of back side illumination image sensor is stated, and is understood with reference to figure 3, Fig. 5 exists for the back side illumination image sensor
The diagrammatic cross-section of bulge-structure and its peripheral position.More structure contents in relation to the present embodiment back side illumination image sensor can
With reference to previous embodiment corresponding contents.
Fig. 5 is refer to, the back side illumination image sensor includes Semiconductor substrate 300.Semiconductor substrate 300 has photoelectricity
Diode photosensitive area (does not mark).There is grid 320 above photodiode photosensitive area.
In the present embodiment, Semiconductor substrate 300 is silicon substrate.In other embodiments of the invention, Semiconductor substrate 300
Can also be germanium substrate, germanium silicon substrate, III-group Ⅴ element compound substrate, silicon carbide substrates or its laminated construction substrate, or absolutely
Silicon substrate on edge body, can also be that well known to a person skilled in the art other suitable semiconductive material substrates.
The back side illumination image sensor further includes pel array (not shown), and the pel array includes array arrangement
Multiple pixels (Fig. 5 shows the part-structure of a pixel), the pixel include above-mentioned photodiode photosensitive area.The picture
Element further includes floating diffusion region (not shown) and transfering transistor (grid 320 is a part for the transfering transistor).In addition,
The pixel further includes other transistor (not shown).
In the present embodiment, multiple pixels can share a floating diffusion region or a picture
Element has a floating diffusion region.And it is possible to as in the foregoing embodiment, every four in the described of two rows two row arrangement
Pixel shares a floating diffusion region, and the floating diffusion region is in the form of a column structure (not shown).
In the present embodiment, the column structure can be monocrystalline silicon material or polysilicon material.
Fig. 5 is refer to, the back side illumination image sensor further includes bulge-structure 350.Bulge-structure 350 is above electric charge
The corresponding semiconductor surface of collecting zone, that is, 300 surface of Semiconductor substrate.Bulge-structure 350 is suitable for extracting the electric charge receipts
Collect the spilling electric charge in region, that is, be suitable for extracting the spilling electric charge in photodiode photosensitive area.Since bulge-structure 350 is suitable for
Extract the spilling electric charge in photodiode photosensitive area, it is thus possible to prevent the pixel of the back side illumination image sensor from occurring to float
Phenomenon is dissipated, so as to improve the performance of the back side illumination image sensor.
In the present embodiment, bulge-structure 350 can also be monocrystalline silicon material or polysilicon material.And it is possible in shape
During into the column structure, while form bulge-structure 350.But the column structure and bulge-structure 350 can also be distinguished
Formed.
In the present embodiment, bulge-structure 350 has the n-type doping in stairway degression from top to bottom concentration.Namely
Say, the top of bulge-structure 350 has relatively most dense n-type doping, and the bottommost of bulge-structure 350 is with relatively most light
N-type doping, and the n-type doping concentration between them is in gradually change.This doping situation contributes to bulge-structure 350 to extract light
Spilling electric charge in electric diode photosensitive area.
It should be noted that in other embodiments of the invention, when all n-type doping regions of the bulge-structure
When, the n-type doping region also extends to the subregion below bulge-structure at the same time.
Please continue to refer to Fig. 5, the back side illumination image sensor further includes the first p-type doped region 370, and the first p-type is mixed
Miscellaneous region 370 is located in the Semiconductor substrate 300 of the lower section of bulge-structure 350.
In the present embodiment, the doping concentration of the first p-type doped region 370 may range from 1E16atom/cm3~
1E18atom/cm3.First p-type doped region 370 doping consider be ensure by the photodiode photosensitive area carry out every
From preventing that normal optical charge is entered in bulge-structure 350 when not carrying out spilling charge extraction operation.At the same time, it is necessary to protect
The formation for demonstrate,proving the first p-type doped region 370 does not interfere with other structures.Therefore, the present embodiment is by the first p-type doped region 370
Doping concentration scope be arranged on 1E16atom/cm3~1E18atom/cm3。
In the present embodiment, the width of bulge-structure 350 (does not mark) scope as 0.1 μm~0.5 μm.Bulge-structure 350
Size of the widths affect to bulge-structure 350.The width of bulge-structure 350 is more than 0.1 μm, to ensure bulge-structure
350 area can be larger, so as to ensure that bulge-structure 350 can form good contact with conductive structure, after being conducive to
The continuous extraction to overflowing electric charge.Meanwhile (white space refers to non-maker to 300 white space of Semiconductor substrate between each pixel
The region of part) it is smaller, and bulge-structure 350 needs to be arranged in corresponding white space, therefore, sets bulge-structure 350
Width to ensure that the making of bulge-structure 350 does not interfere with other structures, such as does not influence photodiode below 0.5 μm
The photosensitive area of photosensitive area, and prevent bulge-structure 350 from producing larger parasitic capacitance.
In the present embodiment, the altitude range of bulge-structure 350 can be 0.1 μm~1.0 μm.The height of bulge-structure 350
It is to influence an important factor for it is to overflowing charge extraction ability.If the height of bulge-structure 350 is too big, follow-up added positive pressure without
Method is preferably acted in the PN junction being made of the first p-type doped region 370 and bulge-structure 350, therefore, extracts effect not
It is good.Also, if the height of bulge-structure 350 is too big, the manufacture difficulty increase of bulge-structure 350, to mixing for bulge-structure 350
General labourer's skill is also difficult to.Therefore, it is necessary to control the height of bulge-structure 350 below 1.0 μm.But if bulge-structure
350 height is too small, and the electric field that voltage is formed can act directly on photodiode photosensitive area, so as to cause to overflow no
In the case of going out electric charge, the normal photoelectron in photodiode photosensitive area is still by " suction " first p-type doped region 370
Situation, causes dark current to rise.Therefore, the height of bulge-structure 350 is set more than 0.1 μm.
Please continue to refer to Fig. 5, the back side illumination image sensor further includes n-type doping region 360, n-type doping region 360
The interior and connection bump structure 350 positioned at Semiconductor substrate 300.
In the present embodiment, the doping that the n-type doping concentration in bulge-structure 350 can be higher than n-type doping region 360 is dense
Degree, so that advantageously with the extraction for overflowing electric charge.
In bulge-structure 350 plus during positive pressure, it will make it that spilling electric charge that photodiode photosensitive area produces is jumped over the first p-type
Doped region 370, and n-type doping region 360 is reached, and then the positive voltage added by bulge-structure 350 is taken away.
In the present embodiment, n-type doping region 360 is located at 350 bottom part down of bulge-structure.And the first p-type doped region 370
Positioned at 360 bottom of n-type doping region.
It should be noted that in other embodiments of the invention, n-type doping region can also extend partially into raised knot
The subregion of structure bottom, such as bulge-structure bottom accounts for whole height a quarter or 1/5th part also serves as N-type
A part for doped region.
In the present embodiment, the thickness range of the first p-type doped region 370 is 0.5 μm~3.0 μm.By the present embodiment institute
The back side illumination image sensor of offer, therefore, the thickness of whole Semiconductor substrate 300 are generally also smaller, for example, 3.5 μm~
4.0 μm, at this time, setting the thickness range of the first p-type doped region 370 can ensure that the first p-type is adulterated for 0.5 μm~3.0 μm
Region 370 can ensure that the normal optical charge in the photodiode photosensitive area does not enter n-type doping area in enough scopes
Domain 360.
In the present embodiment, the distance range of the first p-type doped region 370 to 350 bottom of bulge-structure is exactly n-type doping
The thickness range in region 360.I.e. the first p-type doped region 370 extends to bulge-structure since 360 bottom of n-type doping region
350 depth below (specific depth is the thickness of the first p-type doped region 370).
It should be noted that in other embodiments of the invention, the first p-type doped region 370 can also be tied from protrusion
350 bottom of structure has a certain distance, this distance can be 0 μm~0.5 μm, need to only ensure that the first p-type doped region 370 can be with
N-type doping region 360 and bulge-structure 350 form PN junction.That is, only need to ensure n-type doping region 360 and the at this time
One p-type doped region 370 is adjacent.
In the present embodiment, the thickness range in n-type doping region 360 is 0.05 μm~0.50 μm.N-type doping region 360 is
The N-type semiconductor region of PN junction is formed with the first p-type doped region 370, on the one hand the bottom of it and bulge-structure 350 directly connects
Connect, on the other hand, at least its bottom is connected with the first p-type doped region 370.Therefore, in order to ensure the first p-type doped region
370 with larger thickness (the first p-type doped region 370 with larger thickness be conducive to protect normal optical charge), n-type doping area
The thickness control in domain 360 is in less scope, and therefore, the thickness in n-type doping region 360 is usually arranged as being less than 0.50 μm.
But on the other hand, n-type doping region 360 is also required to have certain thickness, to ensure that corresponding PN junction has higher electricity
Ducting capacity is flowed, therefore, the thickness in n-type doping region 360 is set more than 0.05 μm.
In the present embodiment, the doping concentration scope in n-type doping region 360 is 1E16atom/cm3~1E18atom/cm3.This
Doping concentration scope is equal with the doping concentration scope of the first p-type doped region 370.Therefore, 360 and the first P of n-type doping region
The doping concentration of type doped region 370 is of substantially equal, so that the PN junction performance formed between ensureing them is relatively stable.
In the present embodiment, the width in n-type doping region 360 is 0.05 μm~0.3 μm bigger than the width of bulge-structure 350.N-type
Doped region 360 is wider than bulge-structure 350, helps to increase the size of above-mentioned PN junction, overflows charge extraction ability so as to improve.
But n-type doping region 360 is too big and directly adjacent with photodiode photosensitive area, it is necessary to by n-type doping region in order to prevent
360 width control system within the specific limits, therefore, sets the width in n-type doping region 360 bigger than the width of bulge-structure 350
0.05 μm~0.3 μm.
, can be in bulge-structure 350 plus adjustable positive pressure in the present embodiment.The size of the positive pressure can be 0.5V~
3.0V.The size of the positive pressure, which equally allows for not only to have guaranteed to extract by bulge-structure 350, overflows electric charge, but also does not influence
Normal electric charge in photodiode photosensitive area.
Please continue to refer to Fig. 5, the back side illumination image sensor further includes the second p-type doped region 380, and the second p-type is mixed
Miscellaneous region 380 is located between n-type doping area 360 and the photodiode photosensitive area, and the second p-type doped region 380 leans on
Nearly Semiconductor substrate upper surface.
In the present embodiment, the doping concentration scope of the second p-type doped region 380 is 1E16atom/cm3~1E18atom/
cm3.The doping concentration scope of second p-type doped region 380 is equal with the doping concentration scope of the first p-type doped region 370, because
This, the specific doping concentration of the second p-type doped region 380 and the specific doping concentration substantially phase of the first p-type doped region 370
Deng, this is because, both effects, which are provided to extract, overflows electric charge, and in 1E16atom/cm3~1E18atom/cm3Mix
In miscellaneous concentration range, it can preferably meet to require accordingly.
In the present embodiment, the thickness range of the second p-type doped region 380 is 0 μm~0.5 μm.Also, above know
Road, the thickness of the second p-type doped region 380 down extend since the upper surface of Semiconductor substrate, it is seen then that the second p-type is adulterated
Region 380 is concentrated on close to the position of Semiconductor substrate upper surface.Second p-type doped region 380 also with 360 phase of n-type doping area
Even, so as to form another PN junction, electric charge is overflowed for extracting.
In the present embodiment, since the second p-type doped region 380 and the first p-type doped region 370 are located at Semiconductor substrate
Upper-lower position, and other regions are n-type doping, and doping concentration can be roughly equal with n-type doping region 360.Therefore,
When extracting excess charge, the region between the first p-type doped region 370 and the second p-type doped region 380 exhausts, shape
Into passage is exhausted, the potential of this passage is higher than the first p-type doped region 370 and the second p-type doped region 380 and potential, therefore,
Electric charge is overflowed if produced, this this spilling electric charge preferentially can reach n-type doping region 360 from this passage, and further raised
Positive voltage added by structure 350 is taken away.So as to improve the spilling charge extraction ability of the back side illumination image sensor.
It should be noted that in other embodiments of the invention, one or more p-type doped regions, institute can also be included
P-type doped region is stated between the charge collection region and the n-type doping region.
In the back side illumination image sensor that the present embodiment is provided, by setting bulge-structure 350, and and bulge-structure
The first p-type doped region 370, the second p-type doped region 380 and n-type doping region in 350 underlying semiconductor substrates 300
360 so that the back side illumination image sensor has the ability that can be extracted and overflow electric charge, so that the back side illumination image passes
Sensor performance improves.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (10)
- A kind of 1. back side illumination image sensor, it is characterised in that including：Pel array, the pel array include multiple pixels of array arrangement, and the pixel includes photodiode area, institute Stating photodiode area includes the charge collection region of n-type doping；Bulge-structure, its semiconductor surface corresponding above the charge collection region, the bulge-structure have from top It is in the n-type doping of stairway degression to bottom concentration, the bulge-structure is suitable for extracting the spilling electricity in the charge collection region Lotus.
- 2. imaging sensor as claimed in claim 1, it is characterised in that the bulge-structure is monocrystalline silicon material or polysilicon Material.
- 3. imaging sensor as claimed in claim 1, it is characterised in that add just in the n-type doping region of the bulge-structure Pressure.
- 4. imaging sensor as claimed in claim 1, it is characterised in that the bulge-structure is higher by the charge collection region Corresponding 0.1 μm~1.0 μm of semiconductor surface.
- 5. imaging sensor as claimed in claim 1, it is characterised in that during all n-type doping region of the bulge-structure, The n-type doping region also extends to the subregion below bulge-structure at the same time.
- 6. imaging sensor as claimed in claim 5, it is characterised in that described image sensor further includes：P-type doped region, it is between the charge collection region and the n-type doping region.
- 7. imaging sensor as claimed in claim 5, it is characterised in that described image sensor further includes：N-type channel region, between the n-type doping region and the charge collection region, and connects the two regions；P-type doped region, positioned at the periphery of the N-type channel region, exhausts electricity for limit the N-type channel region Pressure.
- 8. imaging sensor as claimed in claim 7, it is characterised in that the p-type doped region includes the first p-type doped region Domain and the second p-type doped region, the first p-type doped region are located in the Semiconductor substrate below the bulge-structure, institute The second p-type doped region is stated between the n-type doping area and the photosensitive area of the photodiode area.
- 9. imaging sensor as claimed in claim 1, it is characterised in that the doping concentration scope in the n-type doping region is 1E16atom/cm3~1E18atom/cm3。
- 10. imaging sensor as claimed in claim 1, it is characterised in that the width range of the bulge-structure for 0.1 μm~ 0.5μm。
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