CN104599631B - Image element circuit and its driving method and active matrix/organic light emitting display - Google Patents
Image element circuit and its driving method and active matrix/organic light emitting display Download PDFInfo
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Abstract
In the image element circuit and its driving method and active matrix/organic light emitting display that the present invention is provided, by setting up series resistance in image element circuit, reduce the influence of power line pressure drop and leakage current to display effect, so as to improve show uniformity, and the drain current path of the image element circuit is only one, this drain current path is composed in series by multiple thin film transistor (TFT)s, leakage current can further be reduced, thus, glimmer point during dark-state can not only be weakened using the OLED of the image element circuit and its driving method, improve contrast, but also show uniformity can be improved.
Description
Technical field
The present invention relates to technical field of flat panel display, more particularly to a kind of image element circuit and its driving method and active matrix
OLED.
Background technology
Active matrix/organic light emitting display (English full name Active Matrix Organic Lighting
Emitting Display, abbreviation AMOLED) can self-luminescence, unlike Thin Film Transistor-LCD (English full name
Thin Film Transistor liquid crystal display, abbreviation TFT-LCD) need back light system
(backlight system) can just be lighted, therefore visibility and brightness are higher, and more frivolous.At present, active matrix has
Machine active display is described as replacing the display of new generation of Thin Film Transistor-LCD.
In active matrix/organic light emitting display, each pixel includes Organic Light Emitting Diode (English full name Organic
Lighting Emitting Diode, abbreviation OLED) and for driving the image element circuit of the Organic Light Emitting Diode.Each
The brightness of pixel is determined by the electric current for flowing through Organic Light Emitting Diode, and the electric current for flowing through Organic Light Emitting Diode is not only right by its
The image element circuit control answered, also suffers from the influence of power line pressure drop and changes.Because the power line cabling of each pixel is each not
It is identical, therefore the pressure drop on every power line is also different, it is poor that the brightness and expected value for so causing each pixel occur
It is different.The same data-signal of each pixel response but produces the light with different brightness, so as to it is difficult to show with uniform luminance
Image.Moreover, display is very easy to glimmer point phenomenon occur when being in dark-state.For example, in completely black (0 GTG) state, part
The Organic Light Emitting Diode of pixel sends the distinguishable light of naked eyes because the electric current flowed through is higher.
In addition, the image element circuit of active matrix/organic light emitting display is generally by thin film transistor (TFT) (English full name Thin
Film Transistor, abbreviation TFT) build, because the unfavorable factor of the leakage current by thin film transistor (TFT) is influenceed,
Glimmer point phenomenon can be further aggravated, causes contrast low.
Fig. 1 is refer to, it is the circuit diagram of the image element circuit of the active matrix/organic light emitting display of prior art.As schemed
Shown in 1, the image element circuit 10 that active matrix/organic light emitting display is commonly used is by 6 thin film transistor (TFT)s (T31 to T36) and 1
Electric capacity (C) is built, and the image element circuit 10 is connected with power supply malleation VDD and power supply negative pressure VSS respectively, and reception first is swept
Retouch the data-signal DATA. that the scanning signal and data wire of line scan [n-1] and the second scan line scan [n] offers are provided.
However, when display is in dark-state there is leakage current in the 3rd thin film transistor (TFT) T33 and the 4th thin film transistor (TFT) T34 so that N2 is saved
The voltage reduction of point, causes to drive thin film transistor (TFT) T31 electric current rise, therefore flow through Organic Light Emitting Diode OLED electric current
It can increase, and then aggravate glimmer point phenomenon.
At present, conventional image element circuit is usually present current leakage, and drain current path it is relatively more (two with
On), the leakage current of every drain current path is also than larger.For example, image element circuit 10 as shown in Figure 1 there is 2 leakage currents
Path, 2 drain current paths are single thin film transistor (TFT), are the 3rd thin film transistor (TFT) T33 and the 4th thin film transistor (TFT) respectively
T34。
Base this, how to improve the show uniformity of active matrix/organic light emitting display, at the same improve glimmer point phenomenon into
Those skilled in the art technical problems urgently to be resolved hurrily.
The content of the invention
It is an object of the invention to provide a kind of image element circuit and its driving method and active matrix/organic light emitting display,
With the show uniformity for solving existing active matrix/organic light emitting display it is poor, there is glimmer point the problem of.
To solve the above problems, the present invention provides a kind of image element circuit, the image element circuit be used for power supply, scan line and
Data wire connect, the power supply include the first power supply, second source and the 3rd power supply, the scan line include the first scan line,
Second scan line, three scan line and the 4th scan line, the image element circuit include：
First film transistor, is connected between the 3rd node and the 3rd power supply, and its grid is connected to three scan line；
Second thin film transistor (TFT), is connected between data wire and first node, and its grid is connected to the 4th scan line；
Between 3rd thin film transistor (TFT), the source electrode for being connected to first node and the 6th thin film transistor (TFT), its grid is connected to
Two nodes；
4th thin film transistor (TFT), is connected between the 3rd node and the source electrode of the 6th thin film transistor (TFT), and its grid is connected to
Second scan line；
5th thin film transistor (TFT), is connected between the first power supply and first node, and its grid is connected to the first scan line；
6th thin film transistor (TFT), is connected between the drain electrode of the 3rd thin film transistor (TFT) and the anode of Organic Light Emitting Diode,
Its grid is connected to the first scan line；
7th thin film transistor (TFT), is connected between Section Point and the 3rd node, and its grid is connected to the second scan line；
Between first resistor, the source electrode for being connected to the first power supply and the 5th thin film transistor (TFT)；
Second resistance, between the drain electrode for being connected to first node and the 5th thin film transistor (TFT)；
First electric capacity, is connected between the first power supply and Section Point；
Second electric capacity, is connected between the first power supply and the source electrode of first film transistor.
Optionally, in described image element circuit, the negative electrode of the Organic Light Emitting Diode is connected with second source, described
First power supply and second source are used as the driving power supply of the Organic Light Emitting Diode, and the 3rd power supply is used to provide initialization
Level.
Optionally, in described image element circuit, also including the 8th thin film transistor (TFT), the 8th thin film transistor (TFT) connection
Between the drain electrode of the first film transistor and the 3rd power supply, the grid of the 8th thin film transistor (TFT) is connected to the 3rd and swept
Retouch line.
Optionally, in described image element circuit, also including the 8th thin film transistor (TFT), the 8th thin film transistor (TFT) connection
Between the drain electrode of the 7th thin film transistor (TFT) and the anode of Organic Light Emitting Diode, the grid of the 8th thin film transistor (TFT)
It is connected to three scan line.
Optionally, in described image element circuit, also including the 3rd electric capacity, the 3rd capacitance connection is in the second section
Between point and the grid of the second thin film transistor (TFT).
Optionally, in described image element circuit, also including the 3rd electric capacity, the 3rd capacitance connection is in the second section
Between point and the grid of the 4th thin film transistor (TFT).
Accordingly, present invention also offers a kind of driving method of image element circuit, the driving method bag of the image element circuit
Include：Scan period is divided into first time period, second time period and the 3rd period, wherein,
In first time period, the scanning signal that the second scan line and three scan line are provided is low level, opens the 4th
Thin film transistor (TFT), the 7th thin film transistor (TFT), first film transistor and the 8th thin film transistor (TFT), by the 3rd power supply by second section
The voltage initialization of point is low level；
In second time period, the scanning signal that the second scan line and the 4th scan line are provided is low level, the 3rd scanning
The scanning signal that line is provided is high level, closes first film transistor and the 8th thin film transistor (TFT), opens the second film crystal
Pipe, the 4th thin film transistor (TFT) and the 7th thin film transistor (TFT), the first electric capacity and the second electric capacity are respectively written into by data-signal；
In the 3rd period, the scanning signal that the first scan line is provided is low level, the second scan line three scan line and
The scanning signal that 4th scan line is provided is high level, opens the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT), driving electricity
Stream is along the first power supply through the 5th thin film transistor (TFT), the 3rd thin film transistor (TFT), the 6th thin film transistor (TFT) and Organic Light Emitting Diode
Path flows to second source, causes Organic Light Emitting Diode to be lighted luminous.
Optionally, in the driving method of described image element circuit, the scan period also includes being used to avoid sequential from rushing
Prominent switching time section, the switching time section is arranged between the first time period and second time period.
Accordingly, present invention also offers a kind of active matrix/organic light emitting display, the active matrix organic light-emitting
Display includes image element circuit as described above.
In the image element circuit and its driving method and active matrix/organic light emitting display that the present invention is provided, by picture
Series resistance, the influence of reduction power line pressure drop and leakage current to display effect, so that it is uniform to improve display are set up in plain circuit
Property, and the drain current path of the image element circuit is only one, and this drain current path is by multiple thin film transistor (TFT) series connection groups
Into, thus, leakage current not only can further be reduced using the OLED of the image element circuit and its driving method,
Weaken glimmer point during dark-state, improve contrast, but also show uniformity can be improved.
Brief description of the drawings
Fig. 1 is the circuit diagram of the image element circuit of the active matrix/organic light emitting display of prior art；
Fig. 2 is the circuit diagram of the image element circuit of the embodiment of the present invention one；
Fig. 3 is the timing diagram of the driving method of the image element circuit of the embodiment of the present invention one；
Fig. 4 is the circuit diagram of the image element circuit of the embodiment of the present invention two；
Fig. 5 is the circuit diagram of the image element circuit of the embodiment of the present invention three.
Embodiment
Below in conjunction with the drawings and specific embodiments to a kind of image element circuit and its driving method proposed by the present invention and active
Matrix organic light-emitting display is described in further detail.According to following explanation and claims, advantages of the present invention and spy
Levying to become apparent from.It should be noted that, accompanying drawing is using very simplified form and uses non-accurately ratio, only to side
Just the purpose of the embodiment of the present invention, is lucidly aided in illustrating.
【Embodiment one】
Fig. 2 is refer to, it is the structural representation of the image element circuit of the embodiment of the present invention one.As shown in Fig. 2 the pixel
Circuit 20 includes：First film transistor T1, is connected between the 3rd node N3 and the 3rd power supply ELVL, and its grid is connected to
Three scan line Sn3；Second thin film transistor (TFT) T2, is connected between data wire Dm and first node N1, and its grid is connected to the 4th
Scan line Sn4；Between 3rd thin film transistor (TFT) T3, the source electrode for being connected to first node N1 and the 6th thin film transistor (TFT) T6, its grid
Pole is connected to Section Point N2；4th thin film transistor (TFT) T4, be connected to the 3rd node N3 and the 6th thin film transistor (TFT) T6 source electrode it
Between, its grid is connected to the second scan line Sn2；5th thin film transistor (TFT) T5, is connected to the first power supply ELVDD and first node N1
Between, its grid is connected to the first scan line Sn1；6th thin film transistor (TFT) T6, is connected to the 3rd thin film transistor (TFT) T3 drain electrode
Between Organic Light Emitting Diode OLED anode, its grid is connected to the first scan line Sn1；7th thin film transistor (TFT) T7, even
It is connected between Section Point N2 and the 3rd node N3, its grid is connected to the second scan line Sn2；First resistor R1, is connected to
Between one power supply ELVDD and the 5th thin film transistor (TFT) T5 source electrode；Second resistance R2, is connected to first node N1 and the 5th film
Between transistor T5 drain electrode；First electric capacity C1, is connected between the first power supply ELVDD and Section Point N2；Second electric capacity C2,
It is connected between the first power supply ELVDD and first film transistor T1 source electrode.
Specifically, the image element circuit 20 and external power source, including the first power supply ELVDD, second source ELVSS and the 3rd
Power supply ELVL connections.Wherein, the first power supply ELVDD and second source ELVSS are used as Organic Light Emitting Diode OLED drive
Dynamic power supply, the 3rd power supply ELVL is used to provide initialization level.The first power supply ELVDD is generally high level voltage
Source, the second source ELVSS is generally low level voltage source, and the 3rd power supply ELVL is generally low level voltage source.
As shown in Fig. 2 the image element circuit 20 is connected with Organic Light Emitting Diode OLED anode, Organic Light Emitting Diode
OLED negative electrode is connected to second source ELVSS.The drive that Organic Light Emitting Diode OLED is provided according to the image element circuit 20
Streaming current sends the light of corresponding brightness.
In the image element circuit 20, the first resistor R1 and second resistance R2 are connected on along the 5th thin film transistor (TFT)
T5, the 3rd thin film transistor (TFT) T3, on the 6th thin film transistor (TFT) T6 and Organic Light Emitting Diode OLED path, it is connected on the path
On first resistor R1 and second resistance R2 can reduce influence of the change to pixel intensity of power line pressure drop, and for threshold
Threshold voltage is fluctuated and carrier mobility fluctuation also has certain compensating action.
When flowing through the 3rd thin film transistor (TFT) T3 electric current increase, the pressure drop on the first resistor R1 and second resistance R2
It can increase so that the gate source voltage difference reduction of the 3rd thin film transistor (TFT) T3, thus flow through the Organic Light Emitting Diode
OLED driving current can reduce.In the process, first resistor R1 and second resistance R2 play a part of negative-feedback.
In the present embodiment, the drain current path of the image element circuit 20 is only one, leakage current only along first resistor R1,
5th thin film transistor (TFT) T5, second resistance R2, the 3rd thin film transistor (TFT) T3 and the 6th thin film transistor (TFT) T6 this flow path, by
There are multiple thin film transistor (TFT)s to connect in this drain current path, therefore leakage current is smaller.
When display is in dark-state, the first power supply ELVDD passes through first resistor R1, the 5th thin film transistor (TFT) T5, the
Two resistance R2, the 3rd thin film transistor (TFT) T3, the 6th this article of drain current path of thin film transistor (TFT) T6 flow to the organic light-emitting diodes
Pipe OLED leakage current can very little.
As can be seen here, along the 5th thin film transistor (TFT) T5, the 3rd thin film transistor (TFT) T3, the 6th thin film transistor (TFT) T6 and having
The first resistor R1 and second resistance R2 that connected on machine light emitting diode OLED path is not only able to reduce the change of power line pressure drop
Change the influence to pixel intensity, improve show uniformity, moreover it is possible to weaken glimmer point during dark-state, improve contrast, and to current-carrying
Transport factor fluctuation also has certain compensating action.
The image element circuit 20 also includes the 8th thin film transistor (TFT) T8, and the 8th thin film transistor (TFT) T8 is connected to described the
Between one thin film transistor (TFT) T1 drain electrode and the 3rd power supply ELVL, the grid of the 8th thin film transistor (TFT) T8 is connected to
Three scan line Sn3.When the three scan line Sn3 scanning signals provided transit to low level, the 8th thin film transistor (TFT) T8
Conducting, the first film transistor T1 is connected to the 3rd power supply ELVL.Scanning signal is provided in three scan line Sn3
Period, the first film transistor T1 and the 8th thin film transistor (TFT) T8 conducting, so that by the 3rd power supply ELVL voltage
It is supplied to Section Point N2.
The image element circuit 20 also includes the 3rd electric capacity C3, and the 3rd electric capacity C3 is connected to the Section Point N2 and institute
Between the grid for stating the second thin film transistor (TFT) T2, the threshold voltage for compensating the second thin film transistor (TFT) T2.Such as Fig. 2 institutes
Show, the first end of the 3rd electric capacity C3 is connected with the grid of the second thin film transistor (TFT) T2, the of the 3rd electric capacity C3
Two ends are connected with the first end of the first electric capacity C1.In other words, the 3rd electric capacity C3 and the first electric capacity C1 series connection
Between the first power supply ELVDD and the second thin film transistor (TFT) T2 grid.
The image element circuit 20 is a kind of 8T3C2R types circuit structure, including 8 thin film transistor (TFT)s, 3 electric capacity and 2 electricity
Resistance.Wherein, the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 is controlled by the first scan line Sn1, and described first sweeps
Retouch the conducting that the scanning signal of line Sn1 offers is used to control the first power supply ELVDD and Organic Light Emitting Diode OLED；Described 4th
Thin film transistor (TFT) T4 and the 7th thin film transistor (TFT) T7 are controlled by the second scan line Sn2, the scanning that the second scan line Sn2 is provided
Signal is used for control data signal DATA or initializes the write-in of level；The first film transistor T1 and the 8th film crystal
Pipe T8 is controlled by three scan line Sn3, and the scanning signal that the three scan line Sn3 is provided is used to control writing for initialization level
Enter；The second thin film transistor (TFT) T2 is controlled by the 4th scan line Sn4, and the scanning signal that the 4th scan line Sn4 is provided is used
In the control data line Dm data-signal DATA provided write-in.
Accordingly, present invention also offers a kind of driving method of image element circuit.Incorporated by reference to referring to figs. 2 and 3 the picture
The driving method of plain circuit includes：
First time period t1, second time period t2 and the 3rd time period t 3 will be divided into the scan period；
In first time period t1, the scanning signal that the second scan line Sn2 and three scan line Sn3 is provided is low level,
The 4th thin film transistor (TFT) T4, the 7th thin film transistor (TFT) T7, first film transistor T1 and the 8th thin film transistor (TFT) T8 are opened, is passed through
Section Point N2 voltage initialization is low level by the 3rd power supply ELVL；
Low level is in second time period t2, the second scan line Sn2 and the 4th scan line the Sn4 scanning signal provided,
The scanning signal that three scan line Sn3 is provided is high level, closes first film transistor T1 and the 8th thin film transistor (TFT) T8, beats
The second thin film transistor (TFT) T2, the 4th thin film transistor (TFT) T4 and the 7th thin film transistor (TFT) T7 are opened, data-signal Data is respectively written into
First electric capacity C1 and the second electric capacity C2；
In the 3rd time period t 3, the scanning signal that the first scan line Sn1 is provided is low level, the second scan line Sn2, the 3rd
The scanning signal that scan line Sn3 and the 4th scan line Sn4 is provided is high level, opens the 5th thin film transistor (TFT) T5 and the 6th thin
Film transistor T6, driving current is along the first power supply ELVDD through the 5th thin film transistor (TFT) T5, the 3rd thin film transistor (TFT) T3, the 6th thin
Film transistor T6 and Organic Light Emitting Diode OLED path flow to second source ELVSS, cause Organic Light Emitting Diode OLED
Light luminous.
Specifically, first, first time period t1, second time period t2 and the 3rd time period t 3 will be divided into the scan period.
In first time period t1, because the second scan line Sn2 and three scan line the Sn3 scanning signal provided are
Low level, by the second scan line Sn2 the 4th thin film transistor (TFT) T4 controlled and the 7th thin film transistor (TFT) T7 and by the 3rd scanning
The first film transistor T1 and the 8th thin film transistor (TFT) T8 of line Sn3 controls are fully open, and the 8th thin film transistor (TFT) T8 leads to
Cross the first film transistor T1 and constant voltage is provided to the Section Point N2, in the process the 3rd power supply
ELVL is initialized to the first electric capacity C1 and the second electric capacity C2 voltage, that is, refreshes the first electric capacity C1 and the second electric capacity C2 storages
A upper cycle data-signal Data, prepared for the data-signal Data that writes next cycle.After initialization, described
Two node N2 voltage is low level, and thus the 3rd thin film transistor (TFT) T3 is opened.
In second time period t2, because the 3rd power supply ELVL is carried out in first time period t1 to the first electric capacity C1
Initialization, the voltage of the Section Point N2 is low level so that the 3rd thin film transistor (TFT) T3 is opened, therefore data wire Dm
The data-signal Data of offer can pass sequentially through the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, the 4th film
Transistor T4 and the 7th thin film transistor (TFT) T7, and the first electric capacity C1 and the second electric capacity C2 are charged, in the process
The first electric capacity C1 and the second electric capacity C2 writes new data-signal Data.
In the 3rd time period t 3, because the first electric capacity C1 stores data-signal Data, the now Section Point
N2 keeps the data-signal Data, the 3rd thin film transistor (TFT) T3 of write-in to be opened because being controlled by data-signal Data, by the
The 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 of scan line Sn1 controls are also opened, and driving current is along described first
Power supply ELVDD flows through the 5th thin film transistor (TFT) T5, the 3rd thin film transistor (TFT) T3 and the 6th thin film transistor (TFT) T6 films successively
Transistor reaches the anode of the Organic Light Emitting Diode OLED, causes the Organic Light Emitting Diode OLED to light luminous.
3rd time period t 3, pixel normal luminous display image.
Please continue to refer to Fig. 3, the scan period also includes switching time section t0, when the switching time section t0 is arranged at first
Between between section t1 and second time period t2, switching time section t0, three scan line Sn3 provide scanning signal become by low level
For high level, other scanning signals and data-signal holding first time period t1 state.Cut described in being set in the scan period
Circuit sequence conflict can be avoided by changing time period t 0, prevent that working condition from making a mistake.
First time period t1, switching time section t0, second time period t2, the course of work of the 3rd time period t 3 are repeated, it is complete
Into image display function.
【Embodiment two】
Fig. 4 is refer to, it is the structural representation of the image element circuit of the embodiment of the present invention two.As shown in figure 4, the pixel
Circuit 30 includes：First film transistor T1, is connected between the 3rd node N3 and the 3rd power supply ELVL, and its grid is connected to
Three scan line Sn3；Second thin film transistor (TFT) T2, is connected between data wire Dm and first node N1, and its grid is connected to the 4th
Scan line Sn4；Between 3rd thin film transistor (TFT) T3, the source electrode for being connected to first node N1 and the 6th thin film transistor (TFT) T6, its grid
Pole is connected to Section Point N2；4th thin film transistor (TFT) T4, be connected to the 3rd node N3 and the 6th thin film transistor (TFT) T6 source electrode it
Between, its grid is connected to the second scan line Sn2；5th thin film transistor (TFT) T5, is connected to the first power supply ELVDD and first node N1
Between, its grid is connected to the first scan line Sn1；6th thin film transistor (TFT) T6, is connected to the 3rd thin film transistor (TFT) T3 drain electrode
Between Organic Light Emitting Diode OLED anode, its grid is connected to the first scan line Sn1；7th thin film transistor (TFT) T7, even
It is connected between Section Point N2 and the 3rd node N3, its grid is connected to the second scan line Sn2；First resistor R1, is connected to
Between one power supply ELVDD and the 5th thin film transistor (TFT) T5 source electrode；Second resistance R2, is connected to first node N1 and the 5th film
Between transistor T5 drain electrode；First electric capacity C1, is connected between the first power supply ELVDD and Section Point N2；Second electric capacity C2,
It is connected between the first power supply ELVDD and first film transistor T1 source electrode.
Specifically, the image element circuit 30 includes all features of image element circuit 20 described in embodiment one, the present embodiment
Difference with embodiment one is that the 3rd electric capacity C3 is connected to the Section Point N2 and the described 4th in the image element circuit 30
Between thin film transistor (TFT) T4 grid, rather than it is connected to the Section Point N2 and the second thin film transistor (TFT) T2 grid
Between.As shown in figure 4, the first end of the 3rd electric capacity C3 is connected with the grid of the 4th thin film transistor (TFT) T4, described
Three electric capacity C3 the second end is connected with the first end of the first electric capacity C1.In other words, the 3rd electric capacity C3 and described
One electric capacity C1 is connected between the first power supply ELVDD and the 4th thin film transistor (TFT) T4 grid.
In the present embodiment, the 3rd electric capacity C3 is used for the threshold voltage for compensating the 4th thin film transistor (TFT) T4.
【Embodiment three】
Fig. 5 is refer to, it is the structural representation of the image element circuit of the embodiment of the present invention three.As shown in figure 5, the pixel
Circuit 40 includes：First film transistor T1, is connected between the 3rd node N3 and the 3rd power supply ELVL, and its grid is connected to
Three scan line Sn3；Second thin film transistor (TFT) T2, is connected between data wire Dm and first node N1, and its grid is connected to the 4th
Scan line Sn4；Between 3rd thin film transistor (TFT) T3, the source electrode for being connected to first node N1 and the 6th thin film transistor (TFT) T6, its grid
Pole is connected to Section Point N2；4th thin film transistor (TFT) T4, be connected to the 3rd node N3 and the 6th thin film transistor (TFT) T6 source electrode it
Between, its grid is connected to the second scan line Sn2；5th thin film transistor (TFT) T5, is connected to the first power supply ELVDD and first node N1
Between, its grid is connected to the first scan line Sn1；6th thin film transistor (TFT) T6, is connected to the 3rd thin film transistor (TFT) T3 drain electrode
Between Organic Light Emitting Diode OLED anode, its grid is connected to the first scan line Sn1；7th thin film transistor (TFT) T7, even
It is connected between Section Point N2 and the 3rd node N3, its grid is connected to the second scan line Sn2；First resistor R1, is connected to
Between one power supply ELVDD and the 5th thin film transistor (TFT) T5 source electrode；Second resistance R2, is connected to first node N1 and the 5th film
Between transistor T5 drain electrode；First electric capacity C1, is connected between the first power supply ELVDD and Section Point N2；Second electric capacity C2,
It is connected between the first power supply ELVDD and first film transistor T1 source electrode.
Specifically, the image element circuit 40 includes all features of image element circuit 20 described in embodiment one, the present embodiment
Difference with embodiment one is that the 8th thin film transistor (TFT) T8 is connected to the 7th thin film transistor (TFT) in the image element circuit 40
Between T7 drain electrode and the anode of the Organic Light Emitting Diode OLED, rather than it is connected to the first film transistor T1's
Between drain electrode and the 3rd power supply ELVL.The grid of the 8th thin film transistor (TFT) T8 is still attached to three scan line Sn3,
When the three scan line Sn3 scanning signals provided transit to low level, the 8th thin film transistor (TFT) T8 and first is thin
Film transistor T1 is turned on jointly, and the 3rd power supply ELVL voltage is supplied to Section Point N2 by the first film transistor T1,
The drain electrode of the 8th thin film transistor (TFT) T8 is connected with the anode of the Organic Light Emitting Diode OLED, Section Point N2 voltage
There is provided by the 7th thin film transistor (TFT) T7 and the 8th thin film transistor (TFT) T8 to the anode of the Organic Light Emitting Diode OLED.
In the present embodiment, the 8th thin film transistor (TFT) T8 is not used to provide constant voltage to Section Point N2, and
It is to be initialized for the anode to the Organic Light Emitting Diode OLED.
In addition, the image element circuit 40 in embodiment three is compared with the image element circuit 20 in embodiment one, except above-mentioned difference
Outside, following difference can also be included：3rd electric capacity C3 is connected to the Section Point N2 and the 4th thin film transistor (TFT) T4's
Between grid, rather than it is connected between the Section Point N2 and the second thin film transistor (TFT) T2 grid, in other words,
The 3rd electric capacity C3 and the first electric capacity C1 are connected on the first power supply ELVDD and the 4th thin film transistor (TFT) T4 grid
Between, the 3rd electric capacity C3 is used for the threshold voltage for compensating the 4th thin film transistor (TFT) T4, no longer illustrates herein.
Accordingly, present invention also offers a kind of active matrix/organic light emitting display, the active matrix organic light-emitting
Display includes image element circuit as described above.Specifically it refer to above, here is omitted.
To sum up, in the image element circuit and its driving method and active matrix/organic light emitting display that the present invention is provided, lead to
Cross and series resistance is set up in image element circuit, the influence of reduction power line pressure drop and leakage current to display effect, so as to improve aobvious
Show uniformity, and the drain current path of the image element circuit is only one, and this drain current path is by multiple thin film transistor (TFT)s
It is composed in series, can further reduces leakage current, weaken glimmer point during dark-state, improves contrast, and to carrier mobility
Fluctuation also has certain compensating action.Further, the image element circuit is additionally arranged the 3rd electric capacity to improve the compensation of threshold voltage
Effect, so as to further improve the display quality of image.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change that the those of ordinary skill in bright field does according to the disclosure above content, modification, belong to the protection of claims
Scope.
Claims (9)
1. a kind of image element circuit, the image element circuit is used to be connected with power supply, scan line and data wire, the power supply includes first
Power supply, second source and the 3rd power supply, the scan line include the first scan line, the second scan line, three scan line and the 4th
Scan line, it is characterised in that the image element circuit includes：
First film transistor, is connected between the 3rd node and the 3rd power supply, and its grid is connected to three scan line；
Second thin film transistor (TFT), is connected between data wire and first node, and its grid is connected to the 4th scan line；
Between 3rd thin film transistor (TFT), the source electrode for being connected to first node and the 6th thin film transistor (TFT), its grid is connected to second section
Point；
4th thin film transistor (TFT), is connected between the 3rd node and the source electrode of the 6th thin film transistor (TFT), and its grid is connected to second
Scan line；
5th thin film transistor (TFT), is connected between first resistor and second resistance, and its grid is connected to the first scan line；
6th thin film transistor (TFT), is connected between the drain electrode of the 3rd thin film transistor (TFT) and the anode of Organic Light Emitting Diode, its grid
Pole is connected to the first scan line；
7th thin film transistor (TFT), is connected between Section Point and the 3rd node, and its grid is connected to the second scan line；
Between first resistor, the source electrode for being connected to the first power supply and the 5th thin film transistor (TFT)；
Second resistance, between the drain electrode for being connected to first node and the 5th thin film transistor (TFT)；
First electric capacity, is connected between the first power supply and Section Point；
Second electric capacity, is connected between the first power supply and the source electrode of first film transistor.
2. image element circuit as claimed in claim 1, it is characterised in that the negative electrode of Organic Light Emitting Diode connects with second source
Connect, first power supply and second source are used as the driving power supply of the Organic Light Emitting Diode, the 3rd power supply is used to carry
For initialization level.
3. image element circuit as claimed in claim 1, it is characterised in that also including the 8th thin film transistor (TFT), the 8th film
Transistor is connected between the drain electrode of the first film transistor and the 3rd power supply, and the grid of the 8th thin film transistor (TFT) connects
It is connected to three scan line.
4. image element circuit as claimed in claim 1, it is characterised in that also including the 8th thin film transistor (TFT), the 8th film
Transistor is connected between the drain electrode of the 7th thin film transistor (TFT) and the anode of Organic Light Emitting Diode, and the 8th film is brilliant
The grid of body pipe is connected to three scan line.
5. the image element circuit as described in claim 3 or 4, it is characterised in that also including the 3rd electric capacity, the 3rd capacitance connection
Between the grid of the Section Point and the second thin film transistor (TFT).
6. the image element circuit as described in claim 3 or 4, it is characterised in that also including the 3rd electric capacity, the 3rd capacitance connection
Between the grid of the Section Point and the 4th thin film transistor (TFT).
7. a kind of driving method of image element circuit as any one of claim 3 to 6, it is characterised in that scan period
It is divided into first time period, second time period and the 3rd period, wherein,
In first time period, the scanning signal that the second scan line and three scan line are provided is low level, opens the 4th, the
7th, first and the 8th thin film transistor (TFT), by the voltage initialization of Section Point it is low level by the 3rd power supply；
In second time period, the scanning signal that the second scan line and the 4th scan line are provided is low level, and three scan line is carried
The scanning signal of confession is high level, and the thin film transistor (TFT) of closing first and the 8th opens the second, the 4th and the 7th thin film transistor (TFT),
Data-signal is respectively written into the first electric capacity and the second electric capacity；
In the 3rd period, the scanning signal that the first scan line is provided is low level, and second, third is provided with the 4th scan line
Scanning signal is high level, opens the 5th and the 6th thin film transistor (TFT), driving current is along the first power supply through first resistor, the 5th
Thin film transistor (TFT), second resistance, the 3rd thin film transistor (TFT), the path of the 6th thin film transistor (TFT) and Organic Light Emitting Diode flow to
Two power supplys, cause Organic Light Emitting Diode to be lighted luminous.
8. the driving method of image element circuit as claimed in claim 7, it is characterised in that the scan period also includes being used to keep away
Exempt from the switching time section of timing conflict, the switching time section is arranged between the first time period and second time period.
9. a kind of active matrix/organic light emitting display, it is characterised in that including：As any one of claim 1 to 6
Image element circuit.
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| CN105679250B (en) | 2016-04-06 | 2019-01-18 | 京东方科技集团股份有限公司 | A kind of pixel circuit and its driving method, array substrate, display panel and display device |
| CN107818754A (en) * | 2016-09-12 | 2018-03-20 | 昆山国显光电有限公司 | Image element circuit and active matrix/organic light emitting display |
| CN112382235A (en) * | 2020-12-01 | 2021-02-19 | 合肥维信诺科技有限公司 | Pixel circuit, control method thereof and display panel |
| CN113223460B (en) * | 2021-05-14 | 2022-08-05 | 维沃移动通信有限公司 | Pixel circuit, pixel driving method and display device |
| CN113362769A (en) * | 2021-06-25 | 2021-09-07 | 合肥维信诺科技有限公司 | Pixel circuit, gate drive circuit and display panel |
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Effective date of registration: 20201204 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: 215300, 188, Feng Feng Road, Kunshan hi tech Zone, Suzhou, Jiangsu, Kunshan Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |