CN104599631A - Pixel circuit and driving method thereof and active matrix organic light-emitting display - Google Patents
Pixel circuit and driving method thereof and active matrix organic light-emitting display Download PDFInfo
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Abstract
The invention provides a pixel circuit and a driving method thereof and an active matrix organic light-emitting display. A series resistor is added to the pixel circuit to reduce the influence of the voltage drop of a power line and the leakage current on the display effect and accordingly the display uniformity is improved. The pixel circuit is provided with only one leakage current path which is formed by a plurality of thin film transistors through series connection and accordingly the leakage current can be further reduced. Accordingly, dim light points in the dark state can be weakened, the contrast ratio can be improved, and the display uniformity can be improved due to the active matrix organic light-emitting display, wherein the pixel circuit and the driving method thereof are adopted through the active matrix organic light-emitting display.
Description
Technical field
The present invention relates to technical field of flat panel display, particularly a kind of image element circuit and driving method thereof and active matrix/organic light emitting display.
Background technology
Active matrix/organic light emitting display (English full name Active Matrix Organic Lighting EmittingDisplay, be called for short AMOLED) can self-luminescence, unlike Thin Film Transistor-LCD (English full name Thin Film Transistor liquid crystal display, be called for short TFT-LCD) need back light system (backlight system) just can light, therefore visibility and brightness are all higher, and more frivolous.At present, active matrix/organic light emitting display is described as the display of new generation that can replace Thin Film Transistor-LCD.
In active matrix/organic light emitting display, each pixel includes OLED (English full name Organic Lighting Emitting Diode, be called for short OLED) and for driving the image element circuit of described Organic Light Emitting Diode.The brightness of each pixel is determined by the electric current flowing through Organic Light Emitting Diode, and the electric current flowing through Organic Light Emitting Diode is not only controlled by the image element circuit of its correspondence, also can be subject to the impact of power lead pressure drop and change.Because the power lead cabling of each pixel is different, the pressure drop therefore on every bar power lead is also different, so causes the brightness of each pixel and expected value to occur difference.The same data-signal of each pixel response but produces the light with different brightness, thus is difficult to the image that display has uniform luminance.And, be very easy to occur glimmer point phenomenon when display is in dark-state.Such as, when black (0 GTG) state entirely, the Organic Light Emitting Diode of partial pixel because of the electric current that flows through higher and send the light that naked eyes can distinguish.
In addition, the image element circuit of active matrix/organic light emitting display is usually by thin film transistor (TFT) (English full name Thin Film Transistor, be called for short TFT) build, owing to being subject to the impact of the unfavorable factor of the leakage current of thin film transistor (TFT), glimmer point phenomenon can be increased the weight of further, cause contrast low.
Please refer to Fig. 1, it is the circuit diagram of the image element circuit of the active matrix/organic light emitting display of prior art.As shown in Figure 1, active matrix/organic light emitting display the image element circuit 10 commonly used built by 6 thin film transistor (TFT)s (T31 to T36) and 1 electric capacity (C), described image element circuit 10 is connected with power supply malleation VDD and power supply negative pressure VSS respectively, and receives sweep signal that the first sweep trace scan [n-1] and the second sweep trace scan [n] provides and the data-signal DATA. that data line provides.But, when display is in dark-state there is leakage current in the 3rd thin film transistor (TFT) T33 and the 4th thin film transistor (TFT) T34, the voltage of N2 node is reduced, the electric current driving thin film transistor (TFT) T31 is caused to raise, therefore the electric current flowing through Organic Light Emitting Diode OLED can increase, and then increases the weight of glimmer point phenomenon.
At present, generally all there is leakage problem in conventional image element circuit, and drain current path many (two), and the leakage current of every bar drain current path is also larger.Such as, just there are 2 drain current paths in image element circuit 10 as shown in Figure 1,2 drain current paths are single thin film transistor (TFT), are the 3rd thin film transistor (TFT) T33 and the 4th thin film transistor (TFT) T34 respectively.
Base this, how to improve the show uniformity of active matrix/organic light emitting display, improve the technical matters that glimmer point phenomenon has become those skilled in the art urgently to be resolved hurrily simultaneously.
Summary of the invention
The object of the present invention is to provide a kind of image element circuit and driving method thereof and active matrix/organic light emitting display, poor with the show uniformity solving existing active matrix/organic light emitting display, to there is glimmer point problem.
For solving the problem, the invention provides a kind of image element circuit, described image element circuit is used for being connected with power supply, sweep trace and data line, described power supply comprises the first power supply, second source and the 3rd power supply, described sweep trace comprises the first sweep trace, the second sweep trace, three scan line and the 4th sweep trace, and described image element circuit comprises:
The first film transistor, be connected between the 3rd node and the 3rd power supply, its grid is connected to three scan line;
Second thin film transistor (TFT), is connected between data line and first node, and its grid is connected to the 4th sweep trace;
3rd thin film transistor (TFT), between the source electrode being connected to first node and the 6th thin film transistor (TFT), its grid receives Section Point;
4th thin film transistor (TFT), between the source electrode being connected to the 3rd node and the 6th thin film transistor (TFT), its grid is connected to the second sweep trace;
5th thin film transistor (TFT), be connected between the first power supply and first node, its grid is connected to the first sweep trace;
6th thin film transistor (TFT), between the drain electrode being connected to the 3rd thin film transistor (TFT) and the anode of Organic Light Emitting Diode, its grid is connected to the first sweep trace;
7th thin film transistor (TFT), be connected between Section Point and the 3rd node, its grid is connected to the second sweep trace;
First resistance, between the source electrode being connected to the first power supply and the 5th thin film transistor (TFT);
Second resistance, between the drain electrode being connected to first node and the 5th thin film transistor (TFT);
First electric capacity, is connected between the first power supply and Section Point;
Second electric capacity, between the source electrode being connected to the first power supply and the first film transistor.
Optionally, in described image element circuit, the negative electrode of described Organic Light Emitting Diode is connected with second source, and described first power supply and second source are used as the driving power of described Organic Light Emitting Diode, and described 3rd power supply is used for providing initialization level.
Optionally, in described image element circuit, also comprise the 8th thin film transistor (TFT), described 8th thin film transistor (TFT) is connected between the drain electrode of described the first film transistor and the 3rd power supply, and the grid of described 8th thin film transistor (TFT) is connected to three scan line.
Optionally, in described image element circuit, also comprise the 8th thin film transistor (TFT), between the drain electrode that described 8th thin film transistor (TFT) is connected to described 7th thin film transistor (TFT) and the anode of Organic Light Emitting Diode, the grid of described 8th thin film transistor (TFT) is connected to three scan line.
Optionally, in described image element circuit, also comprise the 3rd electric capacity, described 3rd electric capacity is connected between the grid of described Section Point and the second thin film transistor (TFT).
Optionally, in described image element circuit, also comprise the 3rd electric capacity, described 3rd electric capacity is connected between the grid of described Section Point and the 4th thin film transistor (TFT).
Accordingly, present invention also offers a kind of driving method of image element circuit, the driving method of described image element circuit comprises: the scan period is divided into first time period, the second time period and the 3rd time period, wherein,
In first time period, the sweep signal that second sweep trace and three scan line provide is low level, opening the 4th thin film transistor (TFT), the 7th thin film transistor (TFT), the first film transistor and the 8th thin film transistor (TFT), is low level by the 3rd power supply by the voltage initialization of Section Point;
In the second time period, the sweep signal that second sweep trace and the 4th sweep trace provide is low level, the sweep signal that three scan line provides is high level, close the first film transistor and the 8th thin film transistor (TFT), open the second thin film transistor (TFT), the 4th thin film transistor (TFT) and the 7th thin film transistor (TFT), data-signal is write respectively the first electric capacity and the second electric capacity;
In the 3rd time period, the sweep signal that first sweep trace provides is low level, the sweep signal that second sweep trace three scan line and the 4th sweep trace provide is high level, open the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT), drive current flows to second source along the first power supply through the path of the 5th thin film transistor (TFT), the 3rd thin film transistor (TFT), the 6th thin film transistor (TFT) and Organic Light Emitting Diode, causes Organic Light Emitting Diode to light luminescence.
Optionally, in the driving method of described image element circuit, the described scan period also comprises section switching time for avoiding timing conflict, and described switching time, section was arranged between described first time period and the second time period.
Accordingly, present invention also offers a kind of active matrix/organic light emitting display, described active matrix/organic light emitting display comprises image element circuit as above.
In image element circuit provided by the invention and driving method and active matrix/organic light emitting display thereof, by setting up resistance in series in image element circuit, reduction power lead pressure drop and leakage current are on the impact of display effect, thus raising show uniformity, and the drain current path of described image element circuit is only one, this drain current path is composed in series by multiple thin film transistor (TFT), thus, adopt the organic light emitting display of described image element circuit and driving method thereof not only can reduce leakage current further, weaken glimmer point during dark-state, improve contrast, but also can show uniformity be improved.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the image element circuit of the active matrix/organic light emitting display of prior art;
Fig. 2 is the circuit diagram of the image element circuit of the embodiment of the present invention one;
Fig. 3 is the sequential chart of the driving method of the image element circuit of the embodiment of the present invention one;
Fig. 4 is the circuit diagram of the image element circuit of the embodiment of the present invention two;
Fig. 5 is the circuit diagram of the image element circuit of the embodiment of the present invention three.
Embodiment
A kind of image element circuit proposed the present invention below in conjunction with the drawings and specific embodiments and driving method thereof and active matrix/organic light emitting display are described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
[embodiment one]
Please refer to Fig. 2, it is the structural representation of the image element circuit of the embodiment of the present invention one.As shown in Figure 2, described image element circuit 20 comprises: the first film transistor T1, and be connected between the 3rd node N3 and the 3rd power supply ELVL, its grid is connected to three scan line Sn3; Second thin film transistor (TFT) T2, is connected between data line Dm and first node N1, and its grid is connected to the 4th sweep trace Sn4; 3rd thin film transistor (TFT) T3, between the source electrode being connected to first node N1 and the 6th thin film transistor (TFT) T6, its grid receives Section Point N2; 4th thin film transistor (TFT) T4, between the source electrode being connected to the 3rd node N3 and the 6th thin film transistor (TFT) T6, its grid is connected to the second sweep trace Sn2; 5th thin film transistor (TFT) T5, be connected between the first power supply ELVDD and first node N1, its grid is connected to the first sweep trace Sn1; 6th thin film transistor (TFT) T6, between the drain electrode being connected to the 3rd thin film transistor (TFT) T3 and the anode of Organic Light Emitting Diode OLED, its grid is connected to the first sweep trace Sn1; 7th thin film transistor (TFT) T7, be connected between Section Point N2 and the 3rd node N3, its grid is connected to the second sweep trace Sn2; First resistance R1, between the source electrode being connected to the first power supply ELVDD and the 5th thin film transistor (TFT) T5; Second resistance R2, between the drain electrode being connected to first node N1 and the 5th thin film transistor (TFT) T5; First electric capacity C1, is connected between the first power supply ELVDD and Section Point N2; Second electric capacity C2, between the source electrode being connected to the first power supply ELVDD and the first film transistor T1.
Concrete, described image element circuit 20 and external power source, comprise the first power supply ELVDD, and second source ELVSS is connected with the 3rd power supply ELVL.Wherein, described first power supply ELVDD and second source ELVSS is used as the driving power of Organic Light Emitting Diode OLED, and described 3rd power supply ELVL is used for providing initialization level.Described first power supply ELVDD is generally high level voltage source, and described second source ELVSS is generally low level voltage source, and described 3rd power supply ELVL is generally low level voltage source.
As shown in Figure 2, described image element circuit 20 is connected with the anode of Organic Light Emitting Diode OLED, and the negative electrode of Organic Light Emitting Diode OLED is connected to second source ELVSS.Organic Light Emitting Diode OLED sends the light of corresponding brightness according to the drive current that described image element circuit 20 provides.
In described image element circuit 20, described first resistance R1 and the second resistance R2 is connected on along on the path of the 5th thin film transistor (TFT) T5, the 3rd thin film transistor (TFT) T3, the 6th thin film transistor (TFT) T6 and Organic Light Emitting Diode OLED, series connection the first resistance R1 on the path and the second resistance R2 can reduce the impact of change on pixel intensity of power lead pressure drop, and fluctuates for threshold voltage fluctuation and carrier mobility and also have certain compensating action.
When the electric current flowing through the 3rd thin film transistor (TFT) T3 increases, pressure drop on described first resistance R1 and the second resistance R2 can increase, the gate source voltage difference of described 3rd thin film transistor (TFT) T3 is reduced, and the drive current flowing through described Organic Light Emitting Diode OLED thus can reduce.In the process, the first resistance R1 and the second resistance R2 plays degenerative effect.
In the present embodiment, the drain current path of described image element circuit 20 is only one, leakage current is only along the first resistance R1, the 5th thin film transistor (TFT) T5, the second resistance R2, the 3rd thin film transistor (TFT) T3 and the 6th this flow path of thin film transistor (TFT) T6, because this drain current path has multiple thin film transistor (TFT) to connect, therefore leakage current is smaller.
When display is in dark-state, described first power supply ELVDD flow to the leakage current of described Organic Light Emitting Diode OLED by the first resistance R1, the 5th thin film transistor (TFT) T5, the second resistance R2, the 3rd thin film transistor (TFT) T3, the 6th thin film transistor (TFT) T6 this article of drain current path can be very little.
As can be seen here, the the first resistance R1 and the second resistance R2 that connects in path along the 5th thin film transistor (TFT) T5, the 3rd thin film transistor (TFT) T3, the 6th thin film transistor (TFT) T6 and Organic Light Emitting Diode OLED not only can reduce the impact of change on pixel intensity of power lead pressure drop, improve show uniformity, glimmer point during dark-state can also be weakened, improve contrast, and also have certain compensating action to carrier mobility fluctuation.
Described image element circuit 20 also comprises the 8th thin film transistor (TFT) T8, and described 8th thin film transistor (TFT) T8 is connected between the drain electrode of described the first film transistor T1 and described 3rd power supply ELVL, and the grid of described 8th thin film transistor (TFT) T8 is connected to three scan line Sn3.When the sweep signal that three scan line Sn3 provides transits to low level, described 8th thin film transistor (TFT) T8 conducting, described the first film transistor T1 is connected to described 3rd power supply ELVL.There is provided the time period of sweep signal at three scan line Sn3, described the first film transistor T1 and the 8th thin film transistor (TFT) T8 conducting, thus the voltage of the 3rd power supply ELVL is supplied to Section Point N2.
Described image element circuit 20 also comprises the 3rd electric capacity C3, and described 3rd electric capacity C3 is connected between the grid of described Section Point N2 and described second thin film transistor (TFT) T2, for compensating the threshold voltage of described second thin film transistor (TFT) T2.As shown in Figure 2, the first end of described 3rd electric capacity C3 is connected with the grid of described second thin film transistor (TFT) T2, and second end of described 3rd electric capacity C3 is connected with the first end of described first electric capacity C1.In other words, described 3rd electric capacity C3 and described first electric capacity C1 is connected between described first power supply ELVDD and the grid of the second thin film transistor (TFT) T2.
Described image element circuit 20 is a kind of 8T3C2R type circuit structures, comprises 8 thin film transistor (TFT)s, 3 electric capacity and 2 resistance.Wherein, described 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6 is controlled by the first sweep trace Sn1, and the sweep signal that described first sweep trace Sn1 provides is for controlling the conducting of the first power supply ELVDD and Organic Light Emitting Diode OLED; Described 4th thin film transistor (TFT) T4 and the 7th thin film transistor (TFT) T7 is controlled by the second sweep trace Sn2, and the sweep signal that described second sweep trace Sn2 provides is for the write of control data signal DATA or initialization level; Described the first film transistor T1 and the 8th thin film transistor (TFT) T8 is controlled by three scan line Sn3, and the sweep signal that described three scan line Sn3 provides is for controlling the write of initialization level; Described second thin film transistor (TFT) T2 is controlled by the 4th sweep trace Sn4, the write of the data-signal DATA that the sweep signal that described 4th sweep trace Sn4 provides provides for control data line Dm.
Accordingly, present invention also offers a kind of driving method of image element circuit.Incorporated by reference to referring to figs. 2 and 3, the driving method of described image element circuit comprises:
First time period t1, the second time period t 2 and the 3rd time period t 3 will be divided into the scan period;
At first time period t1, the sweep signal that second sweep trace Sn2 and three scan line Sn3 provides is low level, opening the 4th thin film transistor (TFT) T4, the 7th thin film transistor (TFT) T7, the first film transistor T1 and the 8th thin film transistor (TFT) T8, is low level by the 3rd power supply ELVL by the voltage initialization of Section Point N2;
In the second time period t 2, the sweep signal that second sweep trace Sn2 and the 4th sweep trace Sn4 provides is low level, the sweep signal that three scan line Sn3 provides is high level, close the first film transistor T1 and the 8th thin film transistor (TFT) T8, open the second thin film transistor (TFT) T2, the 4th thin film transistor (TFT) T4 and the 7th thin film transistor (TFT) T7, data-signal Data is write respectively the first electric capacity C1 and the second electric capacity C2;
In the 3rd time period t 3, the sweep signal that first sweep trace Sn1 provides is low level, the sweep signal that second sweep trace Sn2, three scan line Sn3 and the 4th sweep trace Sn4 provide is high level, open the 5th thin film transistor (TFT) T5 and the 6th thin film transistor (TFT) T6, drive current flows to second source ELVSS along the first power supply ELVDD through the path of the 5th thin film transistor (TFT) T5, the 3rd thin film transistor (TFT) T3, the 6th thin film transistor (TFT) T6 and Organic Light Emitting Diode OLED, causes Organic Light Emitting Diode OLED to light luminescence.
Concrete, first, first time period t1, the second time period t 2 and the 3rd time period t 3 will be divided into the scan period.
At first time period t1, the sweep signal provided due to described second sweep trace Sn2 and three scan line Sn3 is low level, the 4th thin film transistor (TFT) T4 controlled by the second sweep trace Sn2 and the 7th thin film transistor (TFT) T7 and the first film transistor T1 controlled by three scan line Sn3 and the 8th thin film transistor (TFT) T8 all opens, described 8th thin film transistor (TFT) T8 provides constant voltage by described the first film transistor T1 to described Section Point N2, the voltage of described 3rd power supply ELVL to the first electric capacity C1 and the second electric capacity C2 carries out initialization in the process, namely the data-signal Data in the upper cycle that the first electric capacity C1 and the second electric capacity C2 stores was refreshed, for the data-signal Data writing next cycle prepares.After initialization, the voltage of described Section Point N2 is low level, and described 3rd thin film transistor (TFT) T3 opens thus.
In the second time period t 2, because described 3rd power supply ELVL carries out initialization to the first electric capacity C1 at first time period t1, the voltage of described Section Point N2 is low level, described 3rd thin film transistor (TFT) T3 is opened, therefore the data-signal Data that data line Dm provides can successively by described second thin film transistor (TFT) T2, 3rd thin film transistor (TFT) T3, 4th thin film transistor (TFT) T4 and the 7th thin film transistor (TFT) T7, and described first electric capacity C1 and the second electric capacity C2 is charged, described first electric capacity C1 and the second electric capacity C2 writes new data-signal Data in the process.
In the 3rd time period t 3, because described first electric capacity C1 stores data-signal Data, now described Section Point N2 keeps the data-signal Data of write, described 3rd thin film transistor (TFT) T3 is because opening by data-signal Data controls, the 5th thin film transistor (TFT) T5 controlled by the first sweep trace Sn1 and the 6th thin film transistor (TFT) T6 also opens, drive current flows through described 5th thin film transistor (TFT) T5 successively along described first power supply ELVDD, 3rd thin film transistor (TFT) T3 and the 6th thin film transistor (TFT) T6 thin film transistor (TFT) arrive the anode of described Organic Light Emitting Diode OLED, described Organic Light Emitting Diode OLED is caused to light luminescence.In the 3rd time period t 3, pixel normal luminous display image.
Please continue to refer to Fig. 3, scan period also comprises section t0 switching time, described switching time, section t0 was arranged between first time period t1 and the second time period t 2, at section t0 switching time, the sweep signal that three scan line Sn3 provides becomes high level from low level, and other sweep signals and data-signal keep the state of first time period t1.Described switching time section t0 is set in the scan period and can avoids circuit sequence conflict, prevent duty from making a mistake.
Repeat first time period t1, switching time section t0, the second time period t 2, the 3rd time period t 3 the course of work, complete image display function.
[embodiment two]
Please refer to Fig. 4, it is the structural representation of the image element circuit of the embodiment of the present invention two.As shown in Figure 4, described image element circuit 30 comprises: the first film transistor T1, and be connected between the 3rd node N3 and the 3rd power supply ELVL, its grid is connected to three scan line Sn3; Second thin film transistor (TFT) T2, is connected between data line Dm and first node N1, and its grid is connected to the 4th sweep trace Sn4; 3rd thin film transistor (TFT) T3, between the source electrode being connected to first node N1 and the 6th thin film transistor (TFT) T6, its grid receives Section Point N2; 4th thin film transistor (TFT) T4, between the source electrode being connected to the 3rd node N3 and the 6th thin film transistor (TFT) T6, its grid is connected to the second sweep trace Sn2; 5th thin film transistor (TFT) T5, be connected between the first power supply ELVDD and first node N1, its grid is connected to the first sweep trace Sn1; 6th thin film transistor (TFT) T6, between the drain electrode being connected to the 3rd thin film transistor (TFT) T3 and the anode of Organic Light Emitting Diode OLED, its grid is connected to the first sweep trace Sn1; 7th thin film transistor (TFT) T7, be connected between Section Point N2 and the 3rd node N3, its grid is connected to the second sweep trace Sn2; First resistance R1, between the source electrode being connected to the first power supply ELVDD and the 5th thin film transistor (TFT) T5; Second resistance R2, between the drain electrode being connected to first node N1 and the 5th thin film transistor (TFT) T5; First electric capacity C1, is connected between the first power supply ELVDD and Section Point N2; Second electric capacity C2, between the source electrode being connected to the first power supply ELVDD and the first film transistor T1.
Concrete, described image element circuit 30 comprises all features of image element circuit 20 described in embodiment one, the difference of the present embodiment and embodiment one is, in described image element circuit 30, the 3rd electric capacity C3 is connected between the grid of described Section Point N2 and described 4th thin film transistor (TFT) T4, instead of between the grid being connected to described Section Point N2 and described second thin film transistor (TFT) T2.As shown in Figure 4, the first end of described 3rd electric capacity C3 is connected with the grid of described 4th thin film transistor (TFT) T4, and second end of described 3rd electric capacity C3 is connected with the first end of described first electric capacity C1.In other words, described 3rd electric capacity C3 and described first electric capacity C1 is connected between described first power supply ELVDD and the grid of the 4th thin film transistor (TFT) T4.
In the present embodiment, described 3rd electric capacity C3 is for compensating the threshold voltage of described 4th thin film transistor (TFT) T4.
[embodiment three]
Please refer to Fig. 5, it is the structural representation of the image element circuit of the embodiment of the present invention three.As shown in Figure 5, described image element circuit 40 comprises: the first film transistor T1, and be connected between the 3rd node N3 and the 3rd power supply ELVL, its grid is connected to three scan line Sn3; Second thin film transistor (TFT) T2, is connected between data line Dm and first node N1, and its grid is connected to the 4th sweep trace Sn4; 3rd thin film transistor (TFT) T3, between the source electrode being connected to first node N1 and the 6th thin film transistor (TFT) T6, its grid receives Section Point N2; 4th thin film transistor (TFT) T4, between the source electrode being connected to the 3rd node N3 and the 6th thin film transistor (TFT) T6, its grid is connected to the second sweep trace Sn2; 5th thin film transistor (TFT) T5, be connected between the first power supply ELVDD and first node N1, its grid is connected to the first sweep trace Sn1; 6th thin film transistor (TFT) T6, between the drain electrode being connected to the 3rd thin film transistor (TFT) T3 and the anode of Organic Light Emitting Diode OLED, its grid is connected to the first sweep trace Sn1; 7th thin film transistor (TFT) T7, be connected between Section Point N2 and the 3rd node N3, its grid is connected to the second sweep trace Sn2; First resistance R1, between the source electrode being connected to the first power supply ELVDD and the 5th thin film transistor (TFT) T5; Second resistance R2, between the drain electrode being connected to first node N1 and the 5th thin film transistor (TFT) T5; First electric capacity C1, is connected between the first power supply ELVDD and Section Point N2; Second electric capacity C2, between the source electrode being connected to the first power supply ELVDD and the first film transistor T1.
Concrete, described image element circuit 40 comprises all features of image element circuit 20 described in embodiment one, the difference of the present embodiment and embodiment one is, between the drain electrode that in described image element circuit 40, the 8th thin film transistor (TFT) T8 is connected to described 7th thin film transistor (TFT) T7 and the anode of described Organic Light Emitting Diode OLED, instead of be connected between the drain electrode of described the first film transistor T1 and described 3rd power supply ELVL.The grid of described 8th thin film transistor (TFT) T8 is still connected to three scan line Sn3, when the sweep signal that described three scan line Sn3 provides transits to low level, described 8th thin film transistor (TFT) T8 and the common conducting of the first film transistor T1, the voltage of the 3rd power supply ELVL is supplied to Section Point N2 by described the first film transistor T1, the drain electrode of described 8th thin film transistor (TFT) T8 is connected with the anode of described Organic Light Emitting Diode OLED, the voltage of Section Point N2 is provided to the anode of described Organic Light Emitting Diode OLED by described 7th thin film transistor (TFT) T7 and the 8th thin film transistor (TFT) T8.
In the present embodiment, described 8th thin film transistor (TFT) T8 is also not used in and provides constant voltage to Section Point N2, but for carrying out initialization to the anode of described Organic Light Emitting Diode OLED.
In addition, image element circuit 40 in embodiment three is compared with the image element circuit 20 in embodiment one, in addition to the differences mentioned above, following difference can also be comprised: the 3rd electric capacity C3 is connected between the grid of described Section Point N2 and described 4th thin film transistor (TFT) T4, instead of between the grid being connected to described Section Point N2 and described second thin film transistor (TFT) T2, in other words, described 3rd electric capacity C3 and described first electric capacity C1 is connected between described first power supply ELVDD and the grid of the 4th thin film transistor (TFT) T4, described 3rd electric capacity C3 is for compensating the threshold voltage of described 4th thin film transistor (TFT) T4, no longer illustrate at this.
Accordingly, present invention also offers a kind of active matrix/organic light emitting display, described active matrix/organic light emitting display comprises image element circuit as above.Specifically please refer to above, repeat no more herein.
To sum up, in image element circuit provided by the invention and driving method and active matrix/organic light emitting display thereof, by setting up resistance in series in image element circuit, reduction power lead pressure drop and leakage current are on the impact of display effect, thus raising show uniformity, and the drain current path of described image element circuit is only one, this drain current path is composed in series by multiple thin film transistor (TFT), leakage current can be reduced further, weaken glimmer point during dark-state, improve contrast, and also have certain compensating action to carrier mobility fluctuation.Further, described image element circuit has set up the 3rd electric capacity to improve the compensation effect of threshold voltage, thus improves the display quality of image further.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection domain of claims.
Claims (9)
1. an image element circuit, described image element circuit is used for being connected with power supply, sweep trace and data line, described power supply comprises the first power supply, second source and the 3rd power supply, described sweep trace comprises the first sweep trace, the second sweep trace, three scan line and the 4th sweep trace, it is characterized in that, described image element circuit comprises:
The first film transistor, be connected between the 3rd node and the 3rd power supply, its grid is connected to three scan line;
Second thin film transistor (TFT), is connected between data line and first node, and its grid is connected to the 4th sweep trace;
3rd thin film transistor (TFT), between the source electrode being connected to first node and the 6th thin film transistor (TFT), its grid receives Section Point;
4th thin film transistor (TFT), between the source electrode being connected to the 3rd node and the 6th thin film transistor (TFT), its grid is connected to the second sweep trace;
5th thin film transistor (TFT), be connected between the first power supply and first node, its grid is connected to the first sweep trace;
6th thin film transistor (TFT), between the drain electrode being connected to the 3rd thin film transistor (TFT) and the anode of Organic Light Emitting Diode, its grid is connected to the first sweep trace;
7th thin film transistor (TFT), be connected between Section Point and the 3rd node, its grid is connected to the second sweep trace;
First resistance, between the source electrode being connected to the first power supply and the 5th thin film transistor (TFT);
Second resistance, between the drain electrode being connected to first node and the 5th thin film transistor (TFT);
First electric capacity, is connected between the first power supply and Section Point;
Second electric capacity, between the source electrode being connected to the first power supply and the first film transistor.
2. image element circuit as claimed in claim 1, it is characterized in that, the negative electrode of Organic Light Emitting Diode is connected with second source, and described first power supply and second source are used as the driving power of described Organic Light Emitting Diode, and described 3rd power supply is used for providing initialization level.
3. image element circuit as claimed in claim 1, it is characterized in that, also comprise the 8th thin film transistor (TFT), described 8th thin film transistor (TFT) is connected between the drain electrode of described the first film transistor and the 3rd power supply, and the grid of described 8th thin film transistor (TFT) is connected to three scan line.
4. image element circuit as claimed in claim 1, it is characterized in that, also comprise the 8th thin film transistor (TFT), between the drain electrode that described 8th thin film transistor (TFT) is connected to described 7th thin film transistor (TFT) and the anode of Organic Light Emitting Diode, the grid of described 8th thin film transistor (TFT) is connected to three scan line.
5. the image element circuit as described in claim 3 or 4, is characterized in that, also comprises the 3rd electric capacity, and described 3rd electric capacity is connected between the grid of described Section Point and the second thin film transistor (TFT).
6. the image element circuit as described in claim 3 or 4, is characterized in that, also comprises the 3rd electric capacity, and described 3rd electric capacity is connected between the grid of described Section Point and the 4th thin film transistor (TFT).
7. a driving method for the image element circuit according to any one of claim 1 to 6, is characterized in that, the scan period is divided into first time period, the second time period and the 3rd time period, wherein,
In first time period, the sweep signal that the second sweep trace and three scan line provide is low level, opens the 4th, the 7th pipe, first and the 8th thin film transistor (TFT), is low level by the 3rd power supply by the voltage initialization of Section Point;
In the second time period, the sweep signal that second sweep trace and the 4th sweep trace provide is low level, the sweep signal that three scan line provides is high level, closedown first and the 8th thin film transistor (TFT), open the second, the 4th and the 7th thin film transistor (TFT), data-signal is write respectively the first electric capacity and the second electric capacity;
In the 3rd time period, the sweep signal that first sweep trace provides is low level, the sweep signal that second, third and the 4th sweep trace provide is high level, open the 5th and the 6th thin film transistor (TFT), drive current flows to second source along the first power supply through the path of the 5th, the 3rd, the 6th thin film transistor (TFT) and Organic Light Emitting Diode, causes Organic Light Emitting Diode to light luminescence.
8. the driving method of image element circuit as claimed in claim 7, it is characterized in that, the described scan period also comprises section switching time for avoiding timing conflict, and described switching time, section was arranged between described first time period and the second time period.
9. an active matrix/organic light emitting display, is characterized in that, comprising: the image element circuit according to any one of claim 1 to 6.
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Effective date of registration: 20201204 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: 215300, 188, Feng Feng Road, Kunshan hi tech Zone, Suzhou, Jiangsu, Kunshan Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |