CN104575367B - A kind of image element circuit and its driving method and application - Google Patents

A kind of image element circuit and its driving method and application Download PDF

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Publication number
CN104575367B
CN104575367B CN201310481733.7A CN201310481733A CN104575367B CN 104575367 B CN104575367 B CN 104575367B CN 201310481733 A CN201310481733 A CN 201310481733A CN 104575367 B CN104575367 B CN 104575367B
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China
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transistor
electrically
image
scan line
circuit
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CN201310481733.7A
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CN104575367A (en
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朱晖
胡思明
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昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Publication of CN104575367A publication Critical patent/CN104575367A/en
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Abstract

A kind of image element circuit and its driving method of the present invention, the image element circuit have threshold voltage compensation transistor(4th transistor and the 8th transistor), threshold voltage compensation transistor stores the information of threshold voltage to the first capacitor, so as to improve the light characteristic of pixel cell, so that showing the image with balanced picture quality using its active array organic light emitting display device;Moreover, the image element circuit has leakage compensated transistor(4th transistor, the first transistor and the 7th transistor), leakage compensated transistor in the pixel light emission stage for compensating due to threshold voltage compensation transistor(4th transistor and the 8th transistor)Leakage current cause driving transistor(Third transistor)Grid voltage change, so as to improve the blinking characteristic of pixel cell so that using its active array organic light emitting display device show with it is low flicker picture quality image.

Description

A kind of image element circuit and its driving method and application
Technical field
The present invention relates to display technology field, and in particular to one kind can effectively improve display device response characteristic and show The image element circuit and its driving method of uniform pixel qualities, and using the display device of the image element circuit.
Background technology
Flat-panel monitor have fully planarize, light, thin, power saving the features such as, be the inexorable trend of image display development And research focus.In various types of panel display apparatus, due to active array organic light emitting display device(English full name is Active Matrix Organic Light Emitting Display, abbreviation AMOLED)Use self luminous organic light emission Diode(English full name is Organic Light Emitting Diode, abbreviation OLED)Carry out display image, during with response Between it is short, be driven using low-power consumption, the characteristic of relatively more preferable brightness and colour purity, so organic light-emitting display device is Through the focus as display device of future generation.
For large-scale active array organic light emitting display device, including positioned at many of the intersection region of scan line and data wire Individual pixel cell.Each pixel cell includes Organic Light Emitting Diode and the pixel electricity for driving the Organic Light Emitting Diode Road, image element circuit then further comprises switching transistor, the component such as driving transistor and storage.
Difference and switch between the pixel characteristic of active array organic light emitting display device easily transistor driven is brilliant The influence of the unfavorable factors such as the leakage current of body pipe, thus the quality uniformity of the image of active array organic light emitting display device and Uniformity is difficult to be guaranteed, in particular with the continuous increase of active matrix panel display apparatus size, pixel cell quantity Increase, this problem becomes especially prominent.
As shown in figure 1, traditional active array organic light emitting display device generally includes scan line Sn1, data wire Dm, electricity Source line ELVDD and ELVSS, and it is connected to these lines and the pixel cell being arranged in matrix.Each pixel cell is usual It is used for the capacitor for keeping data voltage including an Organic Light Emitting Diode OLED, two thin film transistor (TFT)s and one;Its In a thin film transistor (TFT) be switching transistor T1 for transmitting data-signal, one is to be used to be had according to data-signal driving Machine light emitting diode OLED driving transistor T2.
Although the display device of conventional active matrix/organic light emitting described in Fig. 1 has the advantages that low-power consumption, due to film The reason in the preparation technology of transistor, it is difficult to which so that all thin film transistor (TFT)s have in active array organic light emitting display device Identical threshold voltage, i.e. voltage between driving transistor T2 grids and source electrode, this allows for depositing between different pixels unit In threshold voltage deviation, so as to cause the current strength for flowing through Organic Light Emitting Diode OLED to change over time and make it that display is bright Spend the generation of non-uniform phenomenon.In addition, leakage current is larger in switching transistor T1, driving transistor T2 grid voltage is caused to send out It is raw to change, so as to cause the electric current for flowing through Organic Light Emitting Diode OLED to change, cause Organic Light Emitting Diode OLED to send out Optical flare, causes the deterioration of active array organic light emitting display device image quality.
The content of the invention
Therefore, to be solved by this invention is that driving transistor has threshold voltage deviation and opened in existing image element circuit Closing the larger technical problem of transistor drain current can be opened there is provided one kind with compensation for drive transistor threshold voltage difference and reduction Close transistor drain current image element circuit, and the image element circuit driving method and application.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows:
A kind of image element circuit of the present invention, electrically connected by data wire with data driver, by scan line with sweeping Driver electrical connection is retouched, each image element circuit further comprises Organic Light Emitting Diode, and each image element circuit also includes:
The first transistor, is connected electrically between the 7th transistor and the 8th transistor, the grid electricity of the first transistor It is connected to three scan line;
Second transistor, is connected electrically between data wire and third transistor, and the grid of the second transistor is electrically connected It is connected to the second scan line;
Third transistor, is connected electrically between the 5th transistor and the 6th transistor, the grid electricity of the third transistor It is connected to the first capacitor;
4th transistor, is connected electrically between the 8th transistor and first capacitor, the 4th transistor Grid be electrically connected to the second scan line;
5th transistor, is connected electrically between the first power supply and the third transistor, the grid of the 5th transistor It is electrically connected to the first scan line;
6th transistor, is connected electrically between the third transistor and Organic Light Emitting Diode, the 6th transistor Grid be electrically connected to first scan line;
7th transistor, is connected electrically between the first transistor and the 3rd power supply, the grid of the 7th transistor It is electrically connected to the three scan line;
8th transistor, is connected electrically between the first transistor and the 5th transistor, the 8th transistor Grid be electrically connected to the 4th scan line;
First capacitor, is electrically connected to first power supply;
The Organic Light Emitting Diode is electrically connected to second source.
First power supply is high level voltage source, and the second source is low level voltage source.
Each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor.
Grid, the source electrode of the 4th transistor and first electricity of Section Point respectively with the third transistor Container is electrically connected, and the absolute value of the voltage difference of the 3rd power supply and the Section Point is equal to the Section Point and described the The absolute value of the voltage difference of one power supply.
The driving method of image element circuit described in institute of the invention is a kind of, is divided into the very first time by the scan period of every row pixel Section(t1), second time period(t2)With the 3rd period(t3), comprise the following steps:
S1, during the first time period, scanner driver exports low level scanning signal to the second scan line and the Three scan line, the 4th transistor of conducting, the first transistor and the 7th transistor so that the voltage of the 3rd power supply is used as resetting voltage It is supplied to third transistor;
S2, during the second time period, the scanner driver exports low level scanning signal to the second scan line With the 4th scan line, conducting second transistor, the 4th transistor and the 8th transistor, because the third transistor is described the It is initialised during one period, so third transistor forward conduction, charges to the first capacitor;
S3, during the 3rd period, the scanner driver exports low level scanning signal to the first scan line, Turn on the 5th transistor and the 6th transistor, driving current along the first power supply through the 5th transistor, the third transistor, 6th transistor and Organic Light Emitting Diode flow to second source, current line pixel luminescence display image.
First power supply is high level voltage source, and the second source is low level voltage source.
Each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor.
Grid, the source electrode of the 4th transistor and first electricity of Section Point respectively with the third transistor Container is electrically connected, and the absolute value of the voltage difference of the 3rd power supply and the Section Point is equal to the Section Point and described the The absolute value of the voltage difference of one power supply.
A kind of active array organic light emitting display device of the present invention, including described image element circuit.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art:
1st, a kind of image element circuit and its driving method of the present invention, the image element circuit have threshold voltage compensation brilliant Body pipe(4th transistor and the 8th transistor), threshold voltage compensation transistor is by the information of threshold voltage storage to the first electric capacity Device, so as to improve the light characteristic of pixel cell, so that display device shows the image with balanced picture quality;And And, the image element circuit has leakage compensated transistor(4th transistor, the first transistor and the 7th transistor), leakage current Compensating transistor is used in the compensation of pixel light emission stage due to threshold voltage compensation transistor(4th transistor and the 8th crystal Pipe)Leakage current cause driving transistor(Third transistor)Grid voltage change, so as to improve the sudden strain of a muscle of pixel cell Bright characteristic, so that display device shows the image with low flicker picture quality.
2nd, the image element circuit in a kind of active array organic light emitting display device of the present invention, its pixel cell has Threshold voltage compensation transistor(4th transistor and the 8th transistor), threshold voltage compensation transistor is by the information of threshold voltage Store to the first capacitor, so as to improve the light characteristic of pixel cell, so that active array organic light emitting display device Image of the display with balanced picture quality;Moreover, each image element circuit is respectively provided with leakage compensated transistor(4th crystal Pipe, the first transistor and the 7th transistor), leakage compensated transistor in the pixel light emission stage for compensating due to threshold voltage Compensate transistor(4th transistor and the 8th transistor)Leakage current cause driving transistor(Third transistor)Grid electricity The change of pressure, so as to improve the blinking characteristic of pixel cell, so that the active array organic light emitting display device is aobvious Show the image with low flicker picture quality;Further, since the image element circuit reduces driving transistor(Third transistor) The leakage current of grid, it is thereby possible to reduce in image element circuit storage capacitance capacitance, so as to reduce capacity area, make Obtain the space of a whole page area reduction of image element circuit, it is possible to achieve improve the mesh of the active array organic light emitting display device resolution ratio 's.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the image element circuit figure of conventional active matrix/organic light emitting display device in the prior art;
Fig. 2 is image element circuit figure of the present invention;
Fig. 3 is the oscillogram for driving the method for image element circuit in Fig. 2;
Fig. 4 is the structural map of active array organic light emitting display device of the present invention;
Reference is expressed as in figure:T1- the first transistors, T2- second transistors, T3- third transistor, T4- the 4th Transistor, the transistors of T5- the 5th, the transistors of T6- the 6th, the transistors of T7- the 7th, the transistors of T8- the 8th, N1- first nodes, N2- Section Points, the nodes of N3- the 3rd, the capacitors of C1- first, Dm- m column data lines, Sn- line ns scan line, Sn1- line ns First scan line, the scan line of Sn2- line ns second, Sn3- line ns three scan line, the scan line of Sn4- line ns the 4th, OLED- Organic Light Emitting Diode, the power supplys of ELVDD- first, ELVSS-second source, the power supplys of ELVL- the 3rd, in the t1- scan periods One period, the second time period in the t2- scan periods, the 3rd period in the t3- scan periods, 110- pixel cells, 120- scanner drivers, 130- data drivers.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention Formula is described in further detail.
Certain exemplary embodiments according to the present invention are described referring to the drawings.Here, it is described as when by the first element When ' attach ' to the second element, the first element can be directly connected to the second element, or by between one or more add ons The second element is connected in succession.Further, for the sake of clarity, concisely eliminate be not for fully understanding the present invention must Some elements of palpus.In addition, identical reference refers to identical element all the time.
Embodiment 1
The present embodiment provides a kind of image element circuit and its driving method, as shown in figure 4, the image element circuit passes through data wire Dm is electrically connected with data driver 130, electrically connected by scan line Sni (i is 1,2,3,4) with scanner driver 120;Such as Fig. 2 Shown, each image element circuit further comprises Organic Light Emitting Diode OLED.
External 4 scan lines of image element circuit:First scan line Sn1, the second scan line Sn2, three scan line Sn3, 4th scan line Sn4;The external 1 data line Dm of image element circuit.
The image element circuit also includes:
It is connected electrically in the first transistor T1 between the source electrode of the 3rd node N3 and the 7th transistor T7 transistors, described One transistor T1 grid is electrically connected to the three scan line Sn3;It is connected electrically in data wire Dm and third transistor T3 leakage The grid of second transistor T2, the second transistor T2 between pole are electrically connected to the second scan line Sn2;It will scan During control signal is supplied to the period of the three scan line Sn3, the first transistor T1 and the 7th transistor T7 is turned on, so that the power supply ELVL of external power supply the 3rd voltage is supplied into the 3rd node N3;It is supplied in scan control signal During second scan line Sn2 period, the 3rd supply voltage ELVL is passed through the described 3rd by the 4th transistor T4 There is provided to the Section Point N2 by node N3.That is, described the first transistor T1 and the 7th transistor T7 are in pixel electricity During the initialization time section of road respective pixel unit 110, by the 4th transistor T4, provided to the Section Point N2 Constant the 3rd power supply ELVL.
Scan control signal is being supplied to the period of the second scan line Sn2, the second transistor T2 is turned on, So as to which the image element circuit respective pixel unit 110 will be supplied to from the data wire Dm data-signals provided.8th transistor T8 Grid be connected to scan control line Sn4.Scan control signal is being supplied to scan control line Sn4 period, the 8th is brilliant Body pipe T8, third transistor T3 and second transistor T2 conductings, so that the will be supplied to from the data wire Dm data-signals provided Two node N2.
Third transistor T3 is connected between first node N1 and the 6th transistor T6, third transistor T3 grid connection To Section Point N2;Third transistor T3 controls are from corresponding with the data-signal that second transistor T2 is provided in pixel cell The amplitude of Organic Light Emitting Diode OLED driving current is flowed to during 110 fluorescent lifetime section.
4th transistor T4 is connected between the 3rd node N3 and Section Point N2, and the 4th transistor T4 grid is connected to Second scan line Sn2.During scan control signal to be supplied to the second scan line Sn2 and the 4th scan line Sn4 period, The 4th transistor T4 and the 8th transistor T8 is turned on jointly, so that by the grid of the third transistor T3 and described second Node N2 connections.
5th transistor T5 is connected between the first power supply ELVDD and the first node N1, the 5th transistor T5 Grid be connected to the first scan line Sn1;It is described when the scan control signal provided from scan control line transits to low level 5th transistor T5 is turned on, then the source electrode of the third transistor T3 is connected to the first power supply of external power supply ELVDD.
6th transistor T6 is connected between the third transistor T3 and the Organic Light Emitting Diode OLED;Described Six transistor T6 grid connects the first scan line Sn1, and high level scan control signal is being supplied into the first scan line Sn1's Period, the 6th transistor T6 cut-offs, so as to prevent driving current to be provided to the Organic Light Emitting Diode OLED; During scan control signal transits to low level fluorescent lifetime section, the 6th transistor T6 conductings, so that the described 3rd Transistor has been connected to the machine light emitting diode OLED, and the third transistor T3 is supplied to Organic Light Emitting Diode to drive Electric current.
7th transistor T7 the pixel cell 110 initialization time section during by the first transistor T1 to The 3rd node N3 provides constant voltage;The 7th transistor T7 is connected to the first transistor T1 and the 3rd power supply Between ELVL, the grid of the 7th transistor T7 is connected to three scan line Sn3, when sweeping for being provided from three scan line Sn3 When retouching control signal and transitting to low level, the 7th transistor T7 conductings, the first transistor T1 is connected to the 3rd electricity Source ELVL, the 3rd power supply ELVL is set to by resetting voltage.
8th transistor T8 is connected between the 3rd node N3 and the first node N1, the 8th transistor T8 Grid be connected to the 4th scan line Sn4;Scan control signal is being supplied to the second scan line Sn2 and the 4th scan line Sn4 Period during, the 4th transistor T4 and the 8th transistor T8 are turned on jointly, so that by the third transistor T3 grid and the Section Point N2 connections.
First capacitor C1 is connected between Section Point N2 and the first power supply ELVDD, is provided by scan control signal During period to three scan line Sn3 and the second scan line Sn2, pass through the 4th transistor T4, the first crystal Pipe T1 and the 7th transistor T7 provides the 3rd supply voltage ELVL to initialize the first capacitor C1.Thereafter, , will be with warp during scan control signal to be supplied to the second scan line Sn2 and the 4th scan line Sn4 period The second transistor T2, the third transistor T3 are crossed, what the 8th transistor T8 and the 4th transistor T4 were provided The corresponding voltage of data-signal is stored in the first capacitor C1.
Organic Light Emitting Diode OLED is connected between the 6th transistor and external power supply second source ELVSS, During the fluorescent lifetime section of the pixel cell 110, the Organic Light Emitting Diode OLED will launch with passing through the described first electricity The driving current that source ELVDD, the 5th transistor T5, the third transistor T3 and the 6th transistor T6 are provided is corresponding Light.
In the different image element circuits, due to the third transistor T3 threshold voltage it is inconsistent, cause stream The electric current for crossing different Organic Light Emitting Diode OLED is inconsistent so that the uniformity of the corresponding brightness of different pixels unit 110 It can be deteriorated, the quality of image can be uneven.In order to solve the problem, the present invention is provided with the 4th crystal in the image element circuit Pipe T4 and the 8th transistor T8, for the compensation for drive transistor during the initialization time of each frame section(That is third transistor T3)Threshold voltage change.
In the image element circuit, because the 4th transistor T4 and the 8th transistor T8 can produce leakage current, So that the voltage of Section Point N2 voltage during the fluorescent lifetime section of each frame changes, i.e.,:First power supply ELVDD electric current passes through the 4th transistor T4 and the 8th transistor T8, flows into the Section Point N2 so that described The voltage rise of first capacitor C1 storages, so as to cause the electric current for flowing through the Organic Light Emitting Diode OLED to change. The stability of the brightness of pixel cell 110 can be deteriorated, and image flicker is serious.In order to solve the problem, the present invention be provided with The symmetrical the first transistor T1 and the 7th transistor T7 of the 4th transistor T4 and the 8th transistor T8, with And the 3rd power supply ELVL, for compensating the 4th transistor T4 and the described 8th during the fluorescent lifetime of each frame section Transistor T8 leakage current.
The 4th transistor T4, the 8th transistor T8 and the first transistor T1, the 7th transistor T7 It is symmetrical;The 4th transistor T4, the first transistor T1 and the 7th transistor T7 can reduce by described First electricity caused by the leakage current that first power supply ELVDD, the 4th transistor T4 and the 8th transistor T8 are flowed into The rise of container storage voltage.The voltage of the 3rd power supply ELVL is less than the voltage of the Section Point N2, and voltage difference is VD1;The voltage of the first power supply ELVDD is higher than the voltage of the Section Point N2, and voltage difference is VD2;VD1 is equal to VD2, So that flowing into described second by the first power supply ELVDD, the 4th transistor T4 and the 8th transistor T8 Node N2 leakage current, which is equal to, passes through the 3rd power supply ELVL, the 4th transistor T4, the first transistor T1 and institute State the leakage current that the 7th transistor T7 flows out the Section Point N2.So as to improve the corresponding pixel cell of the image element circuit The characteristic of 110 flicker, and show the image with balanced picture quality.
First power supply ELVDD described in the present embodiment is high level voltage source, and the second source ELVSS is low level electricity Potential source.
Above-mentioned each transistor is polycrystalline SiTFT or metal oxide semiconductor films transistor, the present embodiment It is preferred that polycrystalline SiTFT.
Fig. 3 is the oscillogram for showing to drive the method for image element circuit in Fig. 2.For the ease of showing, will figure 3 illustrates The drive signal of image element circuit is supplied to during one frame.
The scan period of image element circuit is divided into first time period t1, second time period t2, the 3rd time period t 3.
During the first time period t1 of initialization time section is set to, first by scanner driver output low level scanning Signal turns on the 4th transistor T4, the first transistor T1 and the 7th transistor to the second scan line Sn2 and three scan line Sn3 T7 so that the 3rd power supply ELVL voltage is supplied to Section Point N2 as resetting voltage;Here, the 3rd power supply ELVL is designed For the desired value less than Section Point N2 during every frame fluorescent lifetime section, i.e. the 3rd power supply ELVL and Section Point N2 voltage The absolute value of difference is approximately equal to the absolute value of Section Point N2 and the first power supply ELVDD voltage difference.
Thereafter, it is being set to programming(programming)During the second time period t2 of period, by the turntable driving Device exports low level scanning signal to the second scan line Sn2 and the 4th scan line Sn4, conducting second transistor T2, the 4th crystal Pipe T4 and the 8th transistor T8, because the Section Point N2 is initialised during the first time period t1, so the 3rd Transistor T3 forward conductions, charge to the first capacitor C1;
Thereafter, during the 3rd time period t 3 of fluorescent lifetime section is set to, the scanner driver output low level is swept Signal is retouched to the first scan line Sn1, the 5th transistor T5 and the 6th transistor T6 is turned on, driving current is along the first power supply ELVDD Flowed to through the 5th transistor T5, the third transistor T3, the 6th transistor T6 and Organic Light Emitting Diode OLED Second source ELVSS, current line pixel luminescence display image.
Here, third transistor T3 is in response to being supplied to the third transistor T3 corresponding voltage of threshold voltage to be stored in In one capacitor C1, so the threshold voltage for third transistor T3 during the 3rd time period t 3 is compensated, so as to change The light characteristic of kind pixel cell 110, so that display device shows the image with balanced picture quality.
Embodiment 2
The present embodiment provides a kind of active array organic light emitting display device of image element circuit described in Application Example 1, As shown in figure 4, active array organic light emitting display device includes described in the present embodiment:Some pixel cells 110, scanner driver 120 and data driver 130.The pixel cell 110 is arranged in scan line Sn and data wire Dm intersection in the matrix form Region, and electrically connected by data wire Dm, electrically connected by scan line Sn with scanner driver 120 with data driver 130.
Each pixel cell 110 is initialised during scan line Sn provides the first time period of scan control signal, and And the data that pixel cell 110 receives to provide from data wire Dm in the second time period of the scan line Sn scan control signals provided Signal;During the 3rd period, suitable level is transitted to after the scan control signal that scan line Sn is provided, from And provide electric current to the Organic Light Emitting Diode OLED set in each pixel cell 110 so that the transmitting tool of pixel cell 110 There is the light with data-signal corresponding bright to carry out display image.
Meanwhile, pixel cell 110 is received from outside offer from the first power supply ELVDD, and second source ELVSS and the 3rd is electric Source ELVL, the first power supply ELVDD and second source ELVSS are used separately as high level voltage source and low level voltage source;First electricity Source ELVDD and second source ELVSS is used as the driving power supply of pixel cell 110, and the 3rd power supply ELVL is used to compensate the 3rd crystal The change for the voltage that tube grid is caused due to leakage current.
Scanner driver 120 is produced and outside offer(For example, being provided from timing control unit)Scan control signal phase The scan control signal answered, by the scan control signal produced by scanning monitor 120 respectively by line n scan line Sn1 extremely Sn4 is sequentially supplied to pixel cell 110.
Data driver 130 is produced and outside offer(For example, being provided from timing control unit)Data and data control The corresponding data-signal of signal.The data-signal produced by data driver 130 is passed through into data wire D1 to Dm and scanning signal It is provided synchronously to pixel cell 110.
A kind of active array organic light emitting display device described in the present embodiment, the pixel electricity of each of which pixel cell 110 Road is respectively provided with threshold voltage compensation transistor(4th transistor and the 8th transistor), threshold voltage compensation transistor by threshold value electricity The information of pressure is stored to the first capacitor, so as to improve the light characteristic of pixel, so that active matrix organic light-emitting is shown Device shows the image with balanced picture quality;Moreover, each image element circuit is respectively provided with leakage compensated transistor(4th is brilliant Body pipe, the first transistor and the 7th transistor), leakage compensated transistor in the pixel light emission stage for compensating due to threshold value electricity Pressure compensation transistor(4th transistor and the 8th transistor)Leakage current cause driving transistor(Third transistor)Grid The change of voltage, so as to improve the blinking characteristic of pixel, so that the active array organic light emitting display device is shown Image with low flicker picture quality;Further, since the image element circuit reduces driving transistor(Third transistor)Grid The leakage current of pole, it is thereby possible to reduce in image element circuit storage capacitance capacitance, so as to reduce capacity area so that The space of a whole page area reduction of image element circuit, it is possible to achieve improve the purpose of the active array organic light emitting display device resolution ratio.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or Among changing still in protection scope of the present invention.

Claims (9)

1. a kind of image element circuit, electrically connected by data wire (Dm) with data driver (130), by scan line (Sni) with sweeping Driver (120) electrical connection is retouched, each image element circuit further comprises Organic Light Emitting Diode (OLED), it is characterised in that every Individual image element circuit also includes:
The first transistor (T1), is connected electrically between the 7th transistor (T7) and the 8th transistor (T8), the first transistor (T1) grid is electrically connected to three scan line (Sn3);
Second transistor (T2), is connected electrically between data wire (Dm) and third transistor (T3), the second transistor (T2) Grid be electrically connected to the second scan line (Sn2);
Third transistor (T3), is connected electrically between the 5th transistor (T5) and the 6th transistor (T6), the third transistor (T3) grid is electrically connected to the first capacitor (C1);
4th transistor (T4), is connected electrically between the 8th transistor (T8) and first capacitor (C1), and described The grid of four transistors (T4) is electrically connected to the second scan line (Sn2);
5th transistor (T5), is connected electrically between the first power supply (ELVDD) and the third transistor (T3), and the described 5th is brilliant The grid of body pipe (T5) is electrically connected to the first scan line (Sn1);
6th transistor (T6), is connected electrically between the third transistor (T3) and Organic Light Emitting Diode (OLED), described The grid of 6th transistor (T6) is electrically connected to first scan line (Sn1);
7th transistor (T7), is connected electrically between the first transistor (T1) and the 3rd power supply (ELVL), and the described 7th is brilliant The grid of body pipe (T7) is electrically connected to the three scan line (Sn3);
8th transistor (T8), is connected electrically between the first transistor (T1) and the 5th transistor (T5), and described The grid of eight transistors (T8) is electrically connected to the 4th scan line (Sn4);
First capacitor (C1), is electrically connected to first power supply (ELVDD);
The Organic Light Emitting Diode (OLED) is electrically connected to second source (ELVSS).
2. image element circuit according to claim 1, it is characterised in that first power supply (ELVDD) is high level voltage Source, the second source (ELVSS) is low level voltage source.
3. image element circuit according to claim 2, it is characterised in that each transistor is polycrystalline SiTFT or gold Belong to oxide semiconductor thin-film transistor.
4. image element circuit according to claim 3, it is characterised in that Section Point (N2) respectively with the third transistor (T3) grid, the source electrode of the 4th transistor (T4) and first capacitor (C1) electrical connection, the 3rd power supply (ELVL) absolute value with the voltage difference of the Section Point (N2) is equal to the Section Point (N2) and first power supply (ELVDD) absolute value of voltage difference.
5. the driving method of any described image element circuits of a kind of claim 1-4, it is characterised in that by the scanning of every row pixel Cycle is divided into first time period (t1), second time period (t2) and the 3rd period (t3), comprises the following steps:
S1, during the first time period (t1), scanner driver exports low level scanning signal to the second scan line (Sn2) With three scan line (Sn3), the 4th transistor (T4) of conducting, the first transistor (T1) and the 7th transistor (T7) so that the 3rd The voltage of power supply (ELVL) is supplied to third transistor (T3) as resetting voltage;
S2, during the second time period (t2), the scanner driver exports low level scanning signal to the second scan line (Sn2) and the 4th scan line (Sn4), conducting second transistor (T2), the 4th transistor (T4) and the 8th transistor (T8), due to The third transistor (T3) is initialised during the first time period (t1), so the positive guide of third transistor (T3) It is logical, the first capacitor (C1) is charged;
S3, during the 3rd period (t3), the scanner driver exports low level scanning signal to the first scan line (Sn1), the 5th transistor (T5) of conducting and the 6th transistor (T6), driving current is along the first power supply (ELVDD) through the described 5th Transistor (T5), the third transistor (T3), the 6th transistor (T6) and Organic Light Emitting Diode (OLED) flow to Two power supplys (ELVSS), current line pixel luminescence display image.
6. the driving method of image element circuit according to claim 5, it is characterised in that first power supply (ELVDD) is High level voltage source, the second source (ELVSS) is low level voltage source.
7. the driving method of image element circuit according to claim 6, it is characterised in that each transistor is polysilicon membrane Transistor or metal oxide semiconductor films transistor.
8. the driving method of image element circuit according to claim 7, it is characterised in that Section Point (N2) respectively with it is described The grid of third transistor (T3), the source electrode of the 4th transistor (T4) and first capacitor (C1) electrical connection, institute State the 3rd power supply (ELVL) and the voltage difference of the Section Point (N2) absolute value be equal to the Section Point (N2) with it is described The absolute value of the voltage difference of first power supply (ELVDD).
9. a kind of active array organic light emitting display device, it is characterised in that including any described pixel electricity of claim 1-4 Road.
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