CN104597645B - 阵列基板、显示面板及显示装置 - Google Patents

阵列基板、显示面板及显示装置 Download PDF

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CN104597645B
CN104597645B CN201410593966.0A CN201410593966A CN104597645B CN 104597645 B CN104597645 B CN 104597645B CN 201410593966 A CN201410593966 A CN 201410593966A CN 104597645 B CN104597645 B CN 104597645B
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film transistor
tft
thin film
temperature measurement
measurement unit
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CN104597645A (zh
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曹兆铿
秦丹丹
崔婷婷
席克瑞
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Tianma Microelectronics Co Ltd
Shanghai Tianma Microelectronics Co Ltd
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Tianma Microelectronics Co Ltd
Shanghai Tianma Microelectronics Co Ltd
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

本发明公开了一种阵列基板，其特征在于，包括一个衬底，所述衬底上包括多条栅极线和数据线，且所述栅极线与所述数据线绝缘交叉；所述栅极线和所述数据线围设而成多个呈阵列分布的像素单元；所述阵列基板包括至少一个温度测定单元，以及至少一条栅极信号启动控制线，所述温度测定单元包括至少一个薄膜晶体管；所述阵列基板包括信号输入线和信号输出线，所述温度测定单元包括第一端和第二端，所述第一端与所述信号输入线电连接，所述第二端与所述信号输出线电连接；所述信号输入线上设置有一个电阻。本发明在阵列基板的显示区提供了一个能够测得的面板温度的附加功能区。

Description

阵列基板、显示面板及显示装置
技术领域
本发明涉及显示技术领域，特别涉及一种阵列基板，及由该阵列基板组成的显示面板，以及包含该显示面板的显示装置。
背景技术
显示面板具有轻薄、功耗低和低辐射等优点，目前被广泛的应用于手机、掌上电脑(Personal Digital Assistant,PDA)等便携式电子产品中，例如：薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display,TFT-LCD)、有机发光二级管显示器(Organic Light Emitting Diode,OLED)、低温多晶硅(Low Temperature Poly-silicon,LTPS)显示器以及等离子体显示器(Plasma Display Panel,PDP)等。液晶显示面板通常包括阵列基板和彩膜基板，及阵列基板与彩膜基板之间的液晶分子。随着显示科技的蓬勃发展，消费大众对于显示器显像品质的要求也越来越高。消费大众对显示器的良好的显示效果的要求也日渐提高。
在目前使用的液晶显示装置中，开口率是指除去每一个次像素的配线部、晶体管部(通常采用黑色矩阵隐藏)后的光线通过部分的面积和每一个次像素整体的面积之间的比例。开口率越高，光线通过的效率越高。当光线经由背光板发射出来时，并不是所有的光线都能穿过面板，比如给液晶显示器源极驱动芯片及栅极驱动芯片用的信号走线，以及薄膜晶体管(TFT)本身，还有储存电压用的储存电容等。这些地方除了不完全透光外，也由于经过这些地方的光线不受电压控制，而无法显示正确的灰阶，所以都需利用黑矩阵(blackmatrix)加以遮蔽，以免干扰其它透光区域。而有效的透光区域与全部面积的比例就称之为开口率。通常为保证面板高的开口率，以提高面板的显示效果，在面板的显示区不会设置额外的器件，所以在面板的显示区设置的器件通常都是与像素有关的像素器件，而对面板的性能进行检测的器件通常是设置在面板的非显示区中。
发明内容
本发明实施例提供一种阵列基板，及由该阵列基板组成的显示面板，以及包含该显示面板的显示装置。
有鉴于此，本发明实施例提供一种阵列基板，其中，包括一个衬底，所述衬底上包括多条栅极线和数据线，且所述栅极线与所述数据线绝缘交叉；所述栅极线和所述数据线围设而成多个呈阵列分布的像素单元；所述阵列基板包括至少一个温度测定单元，以及至少一条栅极信号启动控制线，所述温度测定单元包括至少一个薄膜晶体管；所述阵列基板包括信号输入线和信号输出线，所述温度测定单元包括第一端和第二端，所述第一端与所述信号输入线电连接，所述第二端与所述信号输出线电连接；所述信号输入线上设置有一个电阻。
本发明还提供一种显示面板，包括阵列基板，其中，所述显示面板采用如上所述的阵列基板，还包括与所述阵列基板相对放置的彩膜基板，所述彩膜基板包括像素单元区和预设遮光区，所述像素单元区与所述阵列基板上的像素单元相对设置，所述预设遮光区与所述阵列基板上的温度测定单元相对设置。
本发明还提供一种显示装置，其中，包括如上所述的显示面板，所述显示装置包括IC和可绕性电路板(FPC)，所述显示面板通过所述IC或者FPC向信号输入线输入信号，再通过所述信号输出线将输出信号返回到IC或者FPC。
本发明实施例提供的阵列基板，及由该阵列基板组成的显示面板，在面板的显示区中设置有一个附加功能区，即温度测定单元，所述温度测定单元能够检测在面板显示时面板的温度，所述显示面板通过所述IC或者FPC向信号输入线输入信号，再通过所述信号输出线将输出信号返回到IC或者FPC，在对温度测定单元输入信号输出信号的过程中，根据输入电压、电阻、输出电压与面板温度之间的关系，来计算面板的温度，如果面板的温度过高，就可以采用冷却的方法来降低面板的温度，以避免温度过高而使得显示不良，或者造成显示面板及显示装置的损坏。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的阵列基板的一种结构示意图；
图2是本发明实施例提供的第一测定单元的结构示意图；
图3是本发明实施例提供的第二测定单元的一种结构示意图；
图4是本发明实施例提供的第二测定单元的另一种结构示意图；
图5是本发明实施例提供的第二测定单元的第三种结构示意图；
图6是本发明实施例提供的显示面板的剖视图；
图7是本发明实施例提供的显示装置的平面示意图；
图8a是本发明实施例提供的子像素的结构示意图；
图8b是本发明实施例提供的像素单元的结构示意图；
图9是本发明实施例提供的阵列基板的另一种结构示意图；
图10是本发明实施例提供的输出电压与面板温度之间的关系曲线图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供一种阵列基板101，如图1所示，阵列基板101包括一个衬底10，所述衬底10上包括多条栅极线Gn和数据线Dn，从图1中可以看出，所述栅极线Gn为顺序排列的G1、G2、G3到Gn，所述n为正整数；所述数据线为顺序排列的D1、D2、D3到Dn，所述n为正整数；且所述栅极线与所述数据线绝缘交叉；所述栅极线和所述数据线围设而成多个呈阵列分布的像素单元105；所述像素单元105包括多个子像素11，子像素11包括像素电极112以及像素开关111，所述像素开关111为非晶硅薄膜晶体管。所述阵列基板101包括至少一个温度测定单元106，以及至少一条栅极信号启动控制线12，所述温度测定单元106包括至少一个薄膜晶体管；所述阵列基板包括信号输入线13和信号输出线14，所述温度测定单元106包括第一端1061和第二端1062，所述第一端1061与所述信号输入线13电连接，所述第二端1062与所述信号输出线14电连接；所述信号输入线13上设置有一个电阻15。
所述温度测定单元106包括多个第一测定单元20，如图2所示，所述薄膜晶体管21设置在所述第一测定单元内20，所述薄膜晶体管是N型晶体管，所述N型晶体管是高压打开，低压截止的晶体管；所述薄膜晶体管21包括栅极211、漏极213和源极212。其中，所述栅极信号启动控制线12设置在所述第一测定单元20中，所述薄膜晶体管21的栅极211和漏极213均与所述栅极信号启动控制线12电连接，所述源极212与所述栅极线Gn电连接，所述栅极信号启动控制线12包括第三端和第四端，所述栅极信号启动控制线12的第三端是所述温度测定单元的第一端1061，所述栅极信号启动控制线的第四端是所述温度测定单元的第二端1062。所述第一测定单元包括至少一个薄膜晶体管。
所述温度测定单元106还包括多个第二测定单元30，如图3所示，所述薄膜晶体管21设置在所述第二测定单元内30，所述薄膜晶体管21包括第一薄膜晶体管214、第二薄膜晶体管215，所述第一薄膜晶体管214的源极212是所述温度测定单元的第一端1061，所述第二薄膜晶体管215的漏极是所述温度测定单元的第二端，所述薄膜晶体管的栅极211与所述栅极线Gn电连接。所述第一薄膜晶体管214的漏极213与所述第二薄膜晶体管215的源极212电连接。
以上仅是本发明实施例的一种实施方式，本发明实施例的实施方式还可以如图4所示，所述薄膜晶体管21还包括第三薄膜晶体管216。其中，所述第一薄膜晶体管214的漏极213与所述第三薄膜晶体管216的源极212电连接，所述第三薄膜晶体管216的漏极213与所述第二薄膜晶体管215的源极212电连接。
以上仅是本发明实施例的一种实施方式，本发明实施例的实施方式还可以如图5所示，所述薄膜晶体管21还包括第四薄膜晶体管217，所述第一薄膜晶体管214的漏极213与所述第三薄膜晶体管216的源极212电连接，所述第三薄膜晶体管216的漏极213与所述第四薄膜晶体管217的源极212电连接，所述第四薄膜晶体管217的漏极213与所述第二薄膜晶体管215的源极212电连接。
以上仅是本发明实施例的一种实施方式，本发明实施例的实施方式还可以是，所述第二测试单元可以包括多个串联的第四薄膜晶体管。
本发明实施例还提供一种显示面板100，如图6所示，所述显示面板100采用如上所述的阵列基板101，还包括与所述阵列基板101相对放置的彩膜基板102，所述彩膜基板102包括色阻单元区103和预设遮光区104，所述色阻单元区103与所述阵列基板100上的像素单元105相对设置，所述预设遮光区104与所述阵列基板101上的温度测定单元106相对设置。可以在预设遮光区内设置黑矩阵BM。图6中只是描述了显示面板的部分结构，具体的结构可以根据实际需要进行设定，比如在像素单元中子像素之间可以设置多个温度测定单元。
本发明实施例还提供一种显示装置200，如图7所示，包括如上所述的显示面板100，所述显示装置包括IC 201和可绕性电路板(FPC)202，所述IC 201位于可绕性电路板(FPC)202上，所述显示面板100通过所述IC 201或者FPC 202向信号输入线13输入信号，再通过所述信号输出线14将输出信号返回到IC或者FPC。以上仅是本发明的一种实施方式，本发明的实施例还可以是，所述IC位于显示面板上。
在本发明实施例中，如图8a所示，图8a是本发明实施例提供的子像素的结构示意图，子像素电极112中包含条状电极1，则子像素中包括至少一个狭缝(slit)2，假设每个子像素中有n个slit，slit的线宽是A，条状电极的线宽是B，假设slit到像素边缘的必要距离为C，其中C≥2μm，整个子像素11的宽度为L，则如果子像素的宽度刚好为2C+nA+(n+1)B(topcom结构)，或2C+nA+(n-1)B(mid com结构)时，其slit线宽线距的分配是最合理的。从图8a中可以看出，子像素电极112和条状电极1均为矩形，所以子像素的线宽L、slit的线宽A及条状电极的线宽B要以与狭缝2相垂直的方向来确定，所以子像素的线宽L、slit的线宽A及条状电极的线宽B都是矩形的宽的长度。
通常在进行像素结构设计时，由于工艺能力的限制，像素狭缝slit的线宽和线距都是尺寸限制的，一般情况下，条状电极和狭缝与像素的宽度满足L＝2C+nA+(n-1)B或者L＝2C+nA+(n+1)B；如果像素的宽度稍稍比2C+nA+(n+1)B或2C+nA+(n-1)B大，却又不足以放下一组新的slit线宽和条状电极的线宽，那么slit分配就不再合理，也就是当子像素的宽度L大于2C+nA+(n-1)B小于2C+(n+1)A+nB时，或者L大于2C+nA+(n+1)B小于2C+(n+1)A+(n+2)B时，通常会将slit线宽拉大、或者将slit线距拉大；但是如果遇到部分特定的像素，比如5.5寸HD分辨率的像素，简单地将slit线宽拉大、或者将slit线距拉大，就会出现严重的黑畴，从而导致开口率上升但透过率没有得到相应上升的情况。
在本发明实施例中，不将slit线宽拉大、或者将slit线距拉大，而是将像素电极还是按照L＝2C+nA+(n-1)B或者L＝2C+nA+(n+1)B的关系进行设计，与现有技术相比是将子像素进行压缩，而每个子像素进行压缩后多出来的那部分区域，也就是本发明中提到的温度测定单元，而如果要设置温度测定单元，则需要采用至少3个子像素进行压缩，这样压缩的出来的区域才能足够用来设置温度测定单元；在现有技术中，通常温度测定单元设置在面板的非显示区，如果设置面板的显示区就会降低面板的开口率，进而影响面板的显示效果。而在本发明实施例中，将温度测定单元设置在像素压缩区，则不会影响面板的显示效果，还能在面板的显示区设置能够测定面板温度的附加功能区。
在本发明实施例中，每个子像素中包括至少一个狭缝2和一个条状电极1，如图8b所示，有相互垂直的x轴和y轴，x轴是水平方向，y轴是竖直方向，该子像素及像素单元是一个矩形，从图8b中可以看出，该矩形的四个顶点是A’、B’、C’、D’，在该矩形A’B’C’D’中，线段A’B’和C’D’与x轴相平行，线段A’D’和B’C’与y轴相平行，该矩形的长是线段A’B’和C’D’，线段A’B’的长度是所述像素单元的线宽P；若每个子像素压缩的长度为a，如果采用3个子像素进行压缩，则压缩的区域的长度d满足关系式d＝3a，其中，0.5μm≤a≤2.5μm。
综上所述，并结合图8a，P、L、M、d满足如下关系式：
P＝3L+2M+d，
其中d＝3a，0.5μm≤a≤2.5μm，5μm≤M≤6μm；
而L＝2C+nA+(n-1)B或者L＝2C+nA+(n+1)B；
则可得出像素单元的宽度P与子像素中条状电极的宽度B和狭缝的宽度A之间的关系式，如下所示：
P＝3[2C+nA+(n-1)B]+2M+3a，
其中A＞0，B＞0，C≥2μm，5μm≤M≤6μm，0.5μm≤a≤2.5μm；
或者P＝3[2C+nA+(n+1)B]+2M+3a，
其中A＞0，B＞0，C≥2μm，5μm≤M≤6μm，0.5μm≤a≤2.5μm；
采用上述方法对子像素进行压缩，将温度测定单元设置在像素压缩区，则不会影响面板的显示效果，还能在面板的显示区设置能够测定面板温度的附加功能区。
在本发明实施例中每隔n个子像素112设置一个温度测定单元，所述温度测定单元的宽度为W，则W≥n·3a，其中，n为正整数，且n≥3；0.5μm≤a≤2.5μm；其中a为每个子像素压缩的长度。
本发明实施例提供的阵列基板，及由该阵列基板组成的显示面板，在面板的显示区中设置有一个附加功能区，即温度测定单元，所述温度测定单元能够检测在面板显示时面板的温度，所述显示面板通过所述IC或者FPC向信号输入线输入信号，再通过所述信号输出线将输出信号返回到IC或者FPC，在对温度测定单元输入信号输出信号的过程中，根据输入电压、电阻、输出电压与面板温度之间的关系，来计算面板的温度，如果面板的温度过高，就可以采用冷却的方法来降低面板的温度，以避免温度过高而使得显示不良，或者造成显示面板及显示装置的损坏。
在所述阵列基板中，如图9所示，该阵列基板包括显示区3和非显示区4，从图9中可以看出，温度测定单元106在图9中用W’表示，子像素11在图9中用P’表示，所述温度测定单元所需的区域至少要三个子像素进行压缩；所述温度测定单元可以位于同一列，在一列中可以设置多个温度测定单元，也可以只设置一个温度测定单元；温度测定单元也可以位于不同列，也可以在一行子像素之间设置多个温度测定单元；阵列基板上的温度测定单元均与信号输入线13已经信号输出线14电连接。
如图9中所示的温度测定单元可以均为第一测定单元，即所述温度测定单元中都包括栅极信号启动控制线，第一测定单元可以位于同一列，也可以位于不同列；而与同一条栅极信号启动控制线电连接的薄膜晶体管之间是串联的关系，而与不同栅极信号启动控制线电连接的薄膜晶体管之间是并联的关系；所述栅极信号启动控制线为直线形、折线形或者波浪形。
以上仅为本发明实施例的一种实施方式，本发明的实施方式还可以是，在阵列基板上温度测定单元包括至少一个第一测定单元和至少一个第二测定单元，所述第一测定单元中设置有栅极信号启动控制线，所述第二测定单元中没有设置栅极信号启动控制线，所述第一测定单元中的薄膜晶体管与第二测定单元中的薄膜晶体管之间是并联的关系。
在本发明实施例中采用该温度测定单元对面板的温度进行测试的具体方式是根据信号输出线上输出的电压Vout与面板温度T之间的关系式来得出面板的温度。具体地，输出电压与温度的对应关系如下：测量出电压Vout＝x，即可利用如下对应关系计算出当前的面板内温度，即本次实例等效公式为：
T＝y＝1.8682x3-27.078x2+158.47x-336.88
图10是本发明实施例提供的输出电压与面板温度之间的关系曲线图，从图10中可以看出，输出电压的横坐标x轴上的数据，面板温度是纵坐标y轴上的数据，不同的输出电压对应不同的面板温度；其中，IC或者FPC中会记录有如图中提供的输出电压与面板温度之间的关系曲线，当所述信号输出线将输出信号返回到IC或者FPC时，IC或者FPC会根据记录的曲线关系得出面板温度值，并且提出警示，人们可以根据该温度值做出相应的措施，通常液晶显示装置中液晶分子的工作温度不能超过60度，如果超过60度液晶分子就会停止转动，进而造成面板停止工作，而采用本发明中的面板设计，人们可以随时知道面板温度是否过高，进而对面板采取相应的降温措施，保证显示装置能够正常进行工作，并且不影响显示效果；这种面板设计应用在精密仪器中效果更为显著，如果精密仪器温度过高而停止工作，会造成不可弥补的损失，而采用本发明中的面板设计能够有效的避免这一现象。
以上对本发明实施例所提供的一种阵列基板，及由该阵列基板组成的显示面板，以及包含该显示面板的显示装置进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (10)

1.一种阵列基板，其特征在于，包括一个衬底，所述衬底上包括多条栅极线和数据线，且所述栅极线与所述数据线绝缘交叉；所述栅极线和所述数据线围设而成多个呈阵列分布的像素单元；所述阵列基板包括至少一个温度测定单元，以及至少一条栅极信号启动控制线，所述温度测定单元包括至少一个薄膜晶体管；所述阵列基板包括信号输入线和信号输出线，所述温度测定单元包括第一端和第二端，所述第一端与所述信号输入线电连接，所述第二端与所述信号输出线电连接；所述信号输入线上设置有一个电阻；
所述该阵列基板包括显示区，所述显示区包括像素压缩区，所述温度测定单元设置在所述像素压缩区内。
2.根据权利要求1所述的阵列基板，其特征在于，所述温度测定单元包括多个第一测定单元，所述薄膜晶体管设置在所述第一测定单元内，所述薄膜晶体管是N型晶体管，所述薄膜晶体管包括栅极、漏极和源极。
3.根据权利要求2所述的阵列基板，其特征在于，所述栅极信号启动控制线设置在所述第一测定单元中，所述薄膜晶体管的栅极和漏极均与所述栅极信号启动控制线电连接，所述源极与所述栅极线电连接，所述栅极信号启动控制线包括第三端和第四端，所述栅极信号启动控制线的第三端是所述温度测定单元的第一端，所述栅极信号启动控制线的第四端是所述温度测定单元的第二端。
4.根据权利要求2所述的阵列基板，其特征在于，所述温度测定单元还包括多个第二测定单元，所述薄膜晶体管设置在所述第二测定单元内，所述薄膜晶体管包括第一薄膜晶体管、第二薄膜晶体管，所述第一薄膜晶体管的源极是所述温度测定单元的第一端，所述第二薄膜晶体管的漏极是所述温度测定单元的第二端，所述第二测定单元内各所述薄膜晶体管的栅极与所述栅极线电连接；所述第一薄膜晶体管的漏极与所述第二薄膜晶体管的源极电连接。
5.根据权利要求2所述的阵列基板，其特征在于，所述温度测定单元还包括多个第二测定单元，所述薄膜晶体管设置在所述第二测定单元内，所述薄膜晶体管包括第一薄膜晶体管、第二薄膜晶体管，所述第一薄膜晶体管的源极是所述温度测定单元的第一端，所述第二薄膜晶体管的漏极是所述温度测定单元的第二端，所述第二测定单元内各所述薄膜晶体管的栅极与所述栅极线电连接；
所述薄膜晶体管还包括第三薄膜晶体管；所述第一薄膜晶体管的漏极与所述第三薄膜晶体管的源极电连接，所述第三薄膜晶体管的漏极与所述第二薄膜晶体管的源极电连接。
6.根据权利要求2所述的阵列基板，其特征在于，所述温度测定单元还包括多个第二测定单元，所述薄膜晶体管设置在所述第二测定单元内，所述薄膜晶体管包括第一薄膜晶体管、第二薄膜晶体管，所述第一薄膜晶体管的源极是所述温度测定单元的第一端，所述第二薄膜晶体管的漏极是所述温度测定单元的第二端，所述第二测定单元内各所述薄膜晶体管的栅极与所述栅极线电连接；
所述薄膜晶体管还包括第三薄膜晶体管；
所述薄膜晶体管还包括第四薄膜晶体管，所述第一薄膜晶体管的漏极与所述第三薄膜晶体管的源极电连接，所述第三薄膜晶体管的漏极与所述第四薄膜晶体管的源极电连接，所述第四薄膜晶体管的漏极与所述第二薄膜晶体管的源极电连接。
7.根据权利要求1所述的阵列基板，其特征在于，所述像素单元包括多个子像素，每隔n个子像素设置一个温度测定单元，所述温度测定单元的宽度为W，则W≥n·3a，其中，n为正整数，且n≥3；0.5μm≤a≤2.5μm。
8.根据权利要求1所述的阵列基板，其特征在于，所述栅极信号启动控制线为直线形、折线形或者波浪形。
9.一种显示面板，包括阵列基板，其特征在于，所述显示面板采用权利要求1-8任一项所述的阵列基板，还包括与所述阵列基板相对放置的彩膜基板，所述彩膜基板包括色阻单元区和预设遮光区，所述色阻单元区与所述阵列基板上的像素单元区相对设置，所述预设遮光区与所述阵列基板上的温度测定单元相对设置。
10.一种显示装置，其特征在于，包括如权利要求9所述的显示面板，所述显示装置包括IC和可绕性电路板；
所述显示面板通过所述IC或者可绕性电路板向信号输入线输入信号，再通过所述信号输出线将输出信号返回到IC或者可绕性电路板。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10134348B2 (en) * 2015-09-30 2018-11-20 Apple Inc. White point correction
KR20170039431A (ko) * 2015-10-01 2017-04-11 현대자동차주식회사 솔더링 접합방식 인버터 및 이를 적용한 하이브리드 차량
CN107505795B (zh) * 2017-09-11 2020-05-15 武汉天马微电子有限公司 阵列基板、显示面板及其驱动方法和显示装置
CN110136622B (zh) * 2018-02-02 2022-09-23 上海和辉光电股份有限公司 一种显示面板、显示装置、显示数据的处理方法及装置
JP7256647B2 (ja) 2019-01-29 2023-04-12 株式会社ジャパンディスプレイ 表示装置
DE102019204124A1 (de) * 2019-03-26 2020-10-01 Robert Bosch Gmbh Temperaturabhängiges Betreiben eines Bildschirms
CN110221468A (zh) * 2019-06-10 2019-09-10 北海惠科光电技术有限公司 显示面板及其温度补偿方法、显示装置
JP2021039190A (ja) * 2019-09-02 2021-03-11 株式会社ジャパンディスプレイ 表示装置
CN114265250B (zh) * 2021-12-21 2023-04-07 苏州华星光电技术有限公司 液晶显示面板和显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414740B1 (en) * 1999-06-01 2002-07-02 Nec Corporation LCD having temperature detection elements provided on an active-substrate
CN1684134A (zh) * 2003-11-17 2005-10-19 夏普株式会社 图像显示装置及方法、电子装置、液晶tv、液晶监视装置
CN1747172A (zh) * 2004-09-06 2006-03-15 日本电气株式会社 薄膜半导体器件、其驱动电路和使用它们的设备
CN104102033A (zh) * 2014-07-14 2014-10-15 上海中航光电子有限公司 一种阵列基板、显示面板和显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000194325A (ja) * 1998-12-28 2000-07-14 Casio Comput Co Ltd 液晶表示装置及びその信号処理方法
US7492344B2 (en) * 2004-08-13 2009-02-17 Himax Technologies Limited Temperature sensor for liquid crystal display device
KR101133758B1 (ko) * 2005-01-19 2012-04-09 삼성전자주식회사 센서 및 이를 구비한 박막 트랜지스터 표시판
DE102006032262A1 (de) * 2005-07-15 2007-05-03 Samsung Electronics Co., Ltd., Suwon Temperatursensor für eine Anzeigevorrichtung, Dünnschichttransistorarray-Panel, das den Temperatursensor einschliesst, Flüssigkristallanzeige, Treiberschaltung für eine Flüssigkristallanzeige und Flackersteuersystem für eine Flüssigkristallanzeige
US8419273B2 (en) * 2010-05-03 2013-04-16 Sharp Kabushiki Kaisha Array element for temperature sensor array circuit, temperature sensor array circuit utilizing such array element, and AM-EWOD device including such a temperature sensor array circuit
KR102148549B1 (ko) * 2012-11-28 2020-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6414740B1 (en) * 1999-06-01 2002-07-02 Nec Corporation LCD having temperature detection elements provided on an active-substrate
CN1684134A (zh) * 2003-11-17 2005-10-19 夏普株式会社 图像显示装置及方法、电子装置、液晶tv、液晶监视装置
CN1747172A (zh) * 2004-09-06 2006-03-15 日本电气株式会社 薄膜半导体器件、其驱动电路和使用它们的设备
CN104102033A (zh) * 2014-07-14 2014-10-15 上海中航光电子有限公司 一种阵列基板、显示面板和显示装置

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