CN104581570A - 具有改进型振动膜的受话器 - Google Patents
具有改进型振动膜的受话器 Download PDFInfo
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- CN104581570A CN104581570A CN201410848635.7A CN201410848635A CN104581570A CN 104581570 A CN104581570 A CN 104581570A CN 201410848635 A CN201410848635 A CN 201410848635A CN 104581570 A CN104581570 A CN 104581570A
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- vibrating membrane
- receiver
- coil
- modified model
- vibration transducing
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CN201410848635.7A CN104581570A (zh) | 2014-12-31 | 2014-12-31 | 具有改进型振动膜的受话器 |
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CN201410848635.7A CN104581570A (zh) | 2014-12-31 | 2014-12-31 | 具有改进型振动膜的受话器 |
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CN104581570A true CN104581570A (zh) | 2015-04-29 |
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CN201410848635.7A Pending CN104581570A (zh) | 2014-12-31 | 2014-12-31 | 具有改进型振动膜的受话器 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107889039A (zh) * | 2017-12-25 | 2018-04-06 | 苏州明氏自动化技术有限公司 | 动铁受话器 |
CN113944291A (zh) * | 2021-11-17 | 2022-01-18 | 新疆冶金建设(集团)有限责任公司 | 一种保温装饰结构一体化外围护墙体 |
CN107889039B (zh) * | 2017-12-25 | 2024-05-14 | 苏州格洛佛精密科技有限公司 | 动铁受话器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2666074Y (zh) * | 2003-12-23 | 2004-12-22 | 中国科学院声学研究所 | 一种具有高灵敏度的用于硅微电容传声器的芯片 |
CN2676553Y (zh) * | 2004-02-12 | 2005-02-02 | 李井海 | 带孔音膜 |
US20060233401A1 (en) * | 2005-04-13 | 2006-10-19 | General Mems Corporation | Capacitive micromachined acoustic transducer |
CN101237722A (zh) * | 2008-02-15 | 2008-08-06 | 瑞声声学科技(常州)有限公司 | 微型发声器件的制作方法 |
US20090122651A1 (en) * | 2007-10-18 | 2009-05-14 | Mario Kupnik | Direct wafer bonded 2-D CUMT array |
CN202634689U (zh) * | 2012-05-14 | 2012-12-26 | 陆少锋 | 一种敞开式扬声器装置 |
CN103200504A (zh) * | 2012-01-04 | 2013-07-10 | 苏州恒听电子有限公司 | 用于动铁式受话器/扬声器的抗机械冲击电枢装置 |
CN103747378A (zh) * | 2013-12-27 | 2014-04-23 | 苏州恒听电子有限公司 | 一种磁力驱动机构及受话器 |
-
2014
- 2014-12-31 CN CN201410848635.7A patent/CN104581570A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2666074Y (zh) * | 2003-12-23 | 2004-12-22 | 中国科学院声学研究所 | 一种具有高灵敏度的用于硅微电容传声器的芯片 |
CN2676553Y (zh) * | 2004-02-12 | 2005-02-02 | 李井海 | 带孔音膜 |
US20060233401A1 (en) * | 2005-04-13 | 2006-10-19 | General Mems Corporation | Capacitive micromachined acoustic transducer |
US20090122651A1 (en) * | 2007-10-18 | 2009-05-14 | Mario Kupnik | Direct wafer bonded 2-D CUMT array |
CN101237722A (zh) * | 2008-02-15 | 2008-08-06 | 瑞声声学科技(常州)有限公司 | 微型发声器件的制作方法 |
CN103200504A (zh) * | 2012-01-04 | 2013-07-10 | 苏州恒听电子有限公司 | 用于动铁式受话器/扬声器的抗机械冲击电枢装置 |
CN202634689U (zh) * | 2012-05-14 | 2012-12-26 | 陆少锋 | 一种敞开式扬声器装置 |
CN103747378A (zh) * | 2013-12-27 | 2014-04-23 | 苏州恒听电子有限公司 | 一种磁力驱动机构及受话器 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107889039A (zh) * | 2017-12-25 | 2018-04-06 | 苏州明氏自动化技术有限公司 | 动铁受话器 |
CN107889039B (zh) * | 2017-12-25 | 2024-05-14 | 苏州格洛佛精密科技有限公司 | 动铁受话器 |
CN113944291A (zh) * | 2021-11-17 | 2022-01-18 | 新疆冶金建设(集团)有限责任公司 | 一种保温装饰结构一体化外围护墙体 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20170111 Address after: The front road 215000 in Jiangsu province Suzhou city high tech Development Zone No. 299 Building 1 Applicant after: Suzhou Puliansi Electronic Technology Co., Ltd. Address before: 215011 Zhujianglu Road high tech Zone, Jiangsu, No. 855, building, No. 7 Applicant before: Suzhou Hengting Electronic Co., Ltd. |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170301 Address after: Song Ling Zhen Wujiang District of Suzhou City, Jiangsu province 215299 Suzhou River Road No. 18 Applicant after: Suzhou Yi Acoustic Technology Co. Ltd.. Address before: The front road 215000 in Jiangsu province Suzhou city high tech Development Zone No. 299 Building 1 Applicant before: Suzhou Puliansi Electronic Technology Co., Ltd. |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150429 |
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RJ01 | Rejection of invention patent application after publication |