CN104576907B - Flip LED chips encapsulating structure - Google Patents
Flip LED chips encapsulating structure Download PDFInfo
- Publication number
- CN104576907B CN104576907B CN201410806022.7A CN201410806022A CN104576907B CN 104576907 B CN104576907 B CN 104576907B CN 201410806022 A CN201410806022 A CN 201410806022A CN 104576907 B CN104576907 B CN 104576907B
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- CN
- China
- Prior art keywords
- led chips
- flip led
- boss
- encapsulating structure
- circuit layer
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910000679 solder Inorganic materials 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000741 silica gel Substances 0.000 claims abstract description 6
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000005484 gravity Effects 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 abstract description 3
- 238000001125 extrusion Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 238000005219 brazing Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The flip LED chips encapsulating structure of the present invention, it is characterised in that including：Substrate, sets circuit layer on the substrate, the flip LED chips being connected with the circuit layer and the layer of silica gel being arranged on the flip LED chips, and the circuit layer region being connected with the electrode of flip LED chips is provided with boss.Using the flip LED chips encapsulating structure of this programme, by being provided with boss in circuit layer, when connecting flip LED chips with circuit layer, general to use conducting resinl or solder-coated on boss, bubble therein is easily discharged when conducting resinl or solder melt on boss.Therefore, when flip LED chips are placed on boss, bubble in the electrode handle conducting resinl or solder of flip LED chips extrusion reduces interconnection cavity, reduces the thermal resistance of interconnection, improves substrate heat dispersion, extend LED life, and then raising product yield.
Description
Technical field
The present invention relates to flip LED encapsulation technology field, more particularly to a kind of flip LED chips encapsulating structure.
Background technology
LED (Light Emitting Diode), light emitting diode is a kind of can to convert electrical energy into consolidating for visible ray
The semiconductor devices of state.LED can be finally applied in daily life, it is necessary to be packaged to LED.For different LED cores
Chip architecture, there is different packaged types, and flip LED is packaged with its specific encapsulation scheme,
The encapsulation of current flip LED, including LED chip, substrate, interconnection material, the component such as silica gel, while also needing to a variety of
Packaging process, such as silk-screen printing.During flip LED is encapsulated, wherein a mode is needed by being screen printed onto
The circuit layer coated with solder or conducting resinl of substrate, then the electrode of flip LED chips circuit layer is electrically connected to by interconnection material
On.
But during coated with solder or conducting resinl, it is possible to due to the reasons such as positioning precision be coated in two copper sheets it
Between, cause to conduct, occur short circuit when welding, damage LED chip.
The content of the invention
Based on this, a kind of high flip LED chips encapsulating structure of product yield is provided with.
A kind of flip LED chips encapsulating structure, including：Substrate, sets circuit layer on the substrate, with the circuit
The flip LED chips of layer connection and the layer of silica gel being arranged on the flip LED chips, the electricity with the flip LED chips
Extremely the connected circuit layer region is provided with boss.
In one of the embodiments, the circuit layer side between two electrodes of the flip LED chips is provided with exhausted
Edge film.
In one of the embodiments, the sectional area of the boss is more than the electrode of the corresponding flip LED chips
Sectional area.
In one of the embodiments, the boss upper surface sets multiple projections.
In one of the embodiments, the end of the electrode of the flip LED chips sets multiple projections.
In one of the embodiments, it is described raised when being connected with the projection, and interlaced set.
In one of the embodiments, the boss concaves to form accepting groove.
In one of the embodiments, the electrode side of the flip LED chips opens up neck.
In one of the embodiments, the neck angle of inclination is set, opening down.
Using the flip LED chips encapsulating structure of this programme, by being provided with boss in circuit layer, in connection flip LED core
It is general to use conducting resinl or solder-coated on boss when piece is with circuit layer, when conducting resinl or solder melt on boss wherein
Bubble be easily discharged.Therefore, when flip LED chips are placed on boss, the electrode handle conducting resinl of flip LED chips or weldering
Bubble extrusion in material, reduces interconnection cavity, reduces the thermal resistance of interconnection, improve substrate heat dispersion, extend LED life, enter
And raising product yield.
Brief description of the drawings
Fig. 1 is the schematic diagram of the flip LED chips encapsulating structure of an embodiment；
Fig. 2 is the decomposing schematic representation of the flip LED chips encapsulating structure of an embodiment；
Fig. 3 is provided with insulation film schematic diagram for the flip LED chips encapsulating structure of an embodiment；
Fig. 4 is provided with insulation film schematic diagram for the flip LED chips encapsulating structure of another embodiment；
Fig. 5 is the schematic diagram of the boss of the flip LED chips encapsulating structure of an embodiment；
The schematic diagram that Fig. 6 engages for the projection of the flip LED chips encapsulating structure of an embodiment with projection；
The schematic diagram that Fig. 7 agrees with for the projection of the flip LED chips encapsulating structure of an embodiment with projection；
Fig. 8 is the structural representation of the electrode of the flip LED chips encapsulating structure of an embodiment；
Fig. 9 is the structural representation of the electrode of the flip LED chips encapsulating structure of another embodiment；
Figure 10 is the structural representation of the electrode of the flip LED chips encapsulating structure of a further embodiment；
Figure 11 is the groove schematic diagram of the flip LED chips encapsulating structure of an embodiment.
Embodiment
With reference to embodiment and accompanying drawing, flip LED chips structure is described in further detail.
With reference to accompanying drawing 1~3, the encapsulating structure of flip LED chips 3 of an embodiment, including：Substrate 1, circuit layer 2, upside-down mounting
LED chip 3 and layer of silica gel 4.
Substrate 1 is general using ceramic substrate either glass substrate etc. for carrying flip LED chips 3.
Circuit layer 2, is set on substrate 1, for being electrically connected with flip LED chips 3.Specifically, circuit layer 2 can pass through
The modes such as evaporation plate circuit layer 2.The circuit layer 2 being connected with two electrodes 32 of flip LED chips 3 is provided with boss 5.Work as circuit layer
2 carry out the electric connection modes such as gold thread welding with extraneous, you can realize and conducted with extraneous.
Flip LED chips 3, are inverted and are connected with circuit layer 2.In the present embodiment, because circuit layer 2 is divided into two
Point, the less side of circuit layer 2 of N poles corresponding area of flip LED chips 3, the larger side of circuit layer 2 of P poles corresponding area.
Layer of silica gel 4, is arranged on flip LED chips 3, plays sealing function.
Using the encapsulating structure of flip LED chips 3 of this programme, by being provided with boss 5 in circuit layer 2, in connection flip LED
When chip 3 is with circuit layer 2, general to use conducting resinl or solder-coated on boss 5, conducting resinl or solder melt on boss 5
When bubble therein be easily discharged.Therefore, when flip LED chips 3 are placed on boss 5, the electrode 32 of flip LED chips 3
The bubble extrusion in conducting resinl or solder, interconnection cavity is reduced, the thermal resistance of interconnection is reduced, improves the heat dispersion of substrate 1, prolong
Long LED life, and then raising product yield.
With reference to accompanying drawing 3~4, in one embodiment, on the side of circuit layer 2 between two electrodes 32 of flip LED chips 3
Provided with insulation film 6, the insulation film 6 can be realized by traditional coating process.It is of course also possible in flip LED chips 3
Two electrodes 32 between substrate 1 on set insulation film 6 be set between insulation film 6, i.e. circuit layer, prevent the electricity of circuit layer 2
Conducting.
When flip LED chips 3 are placed on boss 5, the conducting resinl or solder being coated on boss 5 are extruded, are squeezed
The conducting resinl or solder gone out is flowed into the surface of substrate 1 between flip LED chips 3, due to that provided with insulation film 6, can avoid
Set up two-part conductive layer conducting separately, and then avoid the short circuit of flip LED chips 3.
With reference to accompanying drawing 2, in one embodiment, the sectional area of boss 5 is slightly larger than the electrode of corresponding flip LED chips 3
32 sectional area, this can be designed so that the contraposition boss 5 of electrode 32 of flip LED chips 3 is accurate.In addition, being set on boss 5
Multiple raised 51, the probability of extruding conducting resinl or brazing metal can be increased, further the gas in conducting resinl or brazing metal
Bubble is squeezed away, reduces cavity, reduces thermal resistance, improves the thermal diffusivity of substrate 1.
With reference to accompanying drawing 6, in other embodiments, the end of the electrode 32 of flip LED chips 3 sets multiple projections 31, convex
51 are played when being connected with projection 31 (when i.e. flip LED chips 3 are placed on boss 5), raised 51 with projection 31 is interlaced sets
Put, the design can increase the area of extruding conducting resinl or brazing metal, extrude the better of bubble.It is appreciated that raised
51 and projection 31 can be the irregular structure such as circular, square.
With reference to accompanying drawing 7, further, projection 31 and projection 51 could be arranged to wedge shape, when the electrode of flip LED chips 3
32 are placed on boss 5, and wedge-shaped projection 31 mutually agrees with projection 51 each other, play a part of positioning and engage.
With reference to accompanying drawing 5, in one embodiment, boss 5 concaves to form accepting groove, and the accepting groove is U-shaped, flip LED core
The electrode 32 of piece 3 be placed on the boss 5 position more rapidly, it is convenient.Further, since accepting groove is U-shaped, i.e., between surrounding senior middle school
The full accepting groove of conducting resinl or solder backflow filling that is low, not overflowing so that the connection of flip LED chips 3 and boss 5 is more preferably
Firmly.
With reference to accompanying drawing 8~10, in other embodiments, the side of electrode 32 of flip LED chips 3 opens up neck 33, the card
Groove 33 can be cut by laser, can accomplish microprocessor.Further, neck 33 can also be tilted certain angle
Degree is set, opening down.It is appreciated that the neck 33 can cut into various shapes as needed, for example, fall " 7 " type.Work as handle
Offer in the insertion accepting groove of flip LED chips 3 of neck 33, neck 33 is filled full by the conducting resinl or solder of molten condition,
When conducting resinl or solder solidification, flip LED chips 3 are securely attached on boss 5, i.e., it is affixed on substrate 1.
In one embodiment, with reference to accompanying drawing 11, groove is opened up on the substrate 1 between two electrodes 32 of flip LED chips 3
7, the groove 7 can be horizontal channel or valley gutter 7, be in the present embodiment valley gutter 7.The valley gutter 7 carries certain angle
Valley gutter 7, be connected in flip LED chips 3 on boss 5, either solder either conducting resinl, during connection,
It is likely to the situation for solder overflow or excessive glue occur.If there is spilling, solder either conducting resinl is passed in groove 7,
Due to the effect of gravity, solder either conducting resinl will flow out along valley gutter 7, serve the effect of self-cleaning；At the same time,
Valley gutter 7 cleverly designs the solder either conducting resinl for the solder either more then many spilling of conducting resinl for avoiding overflow
It can also clear up, the design applicability of valley gutter 7 is higher.
It is appreciated that the need for according to the thickness of substrate 1, and design, valley gutter 7 is set with the surface of substrate 1 in 1~40 °
Put, so that the binder that overflow goes out more easily flows out and cleared up.
Embodiment described above only expresses the several embodiments of the present invention, and it describes more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (6)
1. a kind of flip LED chips encapsulating structure, it is characterised in that including：Substrate, sets circuit layer on the substrate,
The flip LED chips being connected with the circuit layer and the layer of silica gel being arranged on the flip LED chips, with flip LED core
The connected circuit layer region of the electrode of piece is provided with boss；
Wherein, groove is offered on the substrate between electrode described in the two of the flip LED chips, the groove is valley
Groove, so that spilling solder or conducting resinl flow in the valley gutter, under gravity, the solder or the conducting resinl edge
The valley gutter outflow, plays a part of self-cleaning；
The boss concaves to form accepting groove, and the electrode side of the flip LED chips opens up neck, the neck inclination angle
Degree is set, opening down.
2. flip LED chips encapsulating structure according to claim 1, it is characterised in that two electricity of the flip LED chips
Circuit layer side between pole is provided with insulation film.
3. flip LED chips encapsulating structure according to claim 1, it is characterised in that the sectional area of the boss is more than
The sectional area of the electrode of the corresponding flip LED chips.
4. flip LED chips encapsulating structure according to claim 3, it is characterised in that the boss upper surface sets many
Individual projection.
5. flip LED chips encapsulating structure according to claim 4, it is characterised in that the electrode of the flip LED chips
End multiple projections are set.
6. flip LED chips encapsulating structure according to claim 5, it is characterised in that described raised with the projection phase
During connection, and interlaced setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410806022.7A CN104576907B (en) | 2014-12-18 | 2014-12-18 | Flip LED chips encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410806022.7A CN104576907B (en) | 2014-12-18 | 2014-12-18 | Flip LED chips encapsulating structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576907A CN104576907A (en) | 2015-04-29 |
| CN104576907B true CN104576907B (en) | 2017-10-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410806022.7A Active CN104576907B (en) | 2014-12-18 | 2014-12-18 | Flip LED chips encapsulating structure |
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| Country | Link |
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| CN (1) | CN104576907B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106856218B (en) * | 2016-12-20 | 2019-06-11 | 创维液晶器件(深圳)有限公司 | One kind exempting from packaged LED structure and preparation method thereof |
| CN108364920B (en) * | 2018-03-01 | 2022-02-22 | 颀中科技（苏州）有限公司 | Flip chip assembly, flip chip packaging structure and preparation method |
| CN109683396A (en) * | 2019-01-30 | 2019-04-26 | 厦门天马微电子有限公司 | The production method of backlight module, display panel, display device and backlight module |
| WO2021008457A1 (en) * | 2019-07-15 | 2021-01-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-voltage flip-chip led light source, large-area led light source packaging structure and packaging method |
| CN112404634A (en) * | 2020-10-27 | 2021-02-26 | 吴彦君 | Flip-chip LED chip welding protection architecture |
| CN113644186B (en) * | 2021-07-14 | 2023-07-25 | 江苏穿越光电科技有限公司 | Packaging structure of flip LED chip |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100576156B1 (en) * | 2003-10-22 | 2006-05-03 | 삼성전자주식회사 | Semiconductor device formed dam and mounting structure of the semiconductor device |
| CN101350381B (en) * | 2007-07-18 | 2011-03-02 | 晶科电子（广州）有限公司 | Salient point LED and manufacturing method thereof |
| JP5919284B2 (en) * | 2010-10-12 | 2016-05-18 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Light emitting device with reduced epistress |
| US20120261689A1 (en) * | 2011-04-13 | 2012-10-18 | Bernd Karl Appelt | Semiconductor device packages and related methods |
| CN102842666B (en) * | 2011-06-22 | 2015-03-18 | 赛恩倍吉科技顾问（深圳）有限公司 | LED (Light Emitting Diode) flip chip structure and manufacturing method thereof |
| CN203339217U (en) * | 2013-06-26 | 2013-12-11 | 深圳雷曼光电科技股份有限公司 | Led flip-chip structure |
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| CN104576907A (en) | 2015-04-29 |
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