CN104576903A - Method for manufacturing light-emitting diode packaging structures - Google Patents
Method for manufacturing light-emitting diode packaging structures Download PDFInfo
- Publication number
- CN104576903A CN104576903A CN201310469247.3A CN201310469247A CN104576903A CN 104576903 A CN104576903 A CN 104576903A CN 201310469247 A CN201310469247 A CN 201310469247A CN 104576903 A CN104576903 A CN 104576903A
- Authority
- CN
- China
- Prior art keywords
- adhesive layer
- fluorescent adhesive
- substrate
- led
- emitting diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000012790 adhesive layer Substances 0.000 claims description 44
- 238000007596 consolidation process Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000084 colloidal system Substances 0.000 claims 1
- 239000003292 glue Substances 0.000 abstract description 8
- 230000000717 retained effect Effects 0.000 abstract 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000002223 garnet Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a method for manufacturing light-emitting diode packaging structures. The method comprises the following steps: a substrate with multiple electrodes is provided; a plurality of light-emitting diode chips are respectively arranged on the substrate, and the areas with the light-emitting diode chips and the electrodes is defined as a functional area; a forming mold is arranged on the substrate, and a fluorescent glue layer for covering the electrodes and the light-emitting diode chips is formed in the forming mold; part of the fluorescent glue layer on the functional area is baked and cured, so that the fluorescent glue layer forms a curing area and an uncured area positioned around the curing area, and then the forming mold is removed; the fluorescent glue layer is baked for the second time, so that all the fluorescent glue layer is cured; the substrate is cut to form a plurality of light-emitting diode packaging structures. The method cannot enable the fluorescent glue layer to be stuck or retained on the forming mold.
Description
Technical field
The present invention relates to a kind of manufacture method of package structure for LED.
Background technology
Compared to traditional light emitting source, light-emitting diode (Light Emitting Diode, LED) has the advantages such as lightweight, volume is little, it is low to pollute, the life-span is long, and it is as a kind of novel light emitting source, is applied more and more widely.
In general package structure for LED, often utilize formed in mould mode to make a fluorescent adhesive layer and cover on the led chips.But when utilizing formed in mould mode to make fluorescent adhesive layer, after fluorescent adhesive layer solidification, because the adhesion strength of the fluorescent glue after solidification and metal die is high, difficult drop-off, thus fluorescent adhesive layer often can be caused to adhere or remain on mould.
Summary of the invention
In view of this, be necessary that providing a kind of avoids fluorescent adhesive layer to adhere or remain in the manufacture method of the package structure for LED on mould.
A manufacture method for package structure for LED, it comprises following step:
The substrate that one has multiple electrode is provided;
Be arranged at respectively on substrate by multiple light-emitting diode chip for backlight unit, wherein the region at light-emitting diode chip for backlight unit and electrode place is defined as a functional area;
Substrate arranges a molding tool, in mould, forms the fluorescent adhesive layer of coated electrode and light-emitting diode chip for backlight unit;
Baking-curing is carried out to the part fluorescent adhesive layer on functional area, makes fluorescent adhesive layer form a consolidation zone and and be positioned at uncured region around this consolidation zone, then remove mould;
Second time baking is carried out to fluorescent adhesive layer, makes it all solidify;
Cutting substrate forms multiple package structure for LED.
In the manufacture method of above-mentioned package structure for LED, mould is utilized to make after a fluorescent adhesive layer covers on light-emitting diode chip for backlight unit and electrode, first baking-curing is carried out to the part fluorescent adhesive layer on the functional area of substrate, thus make fluorescent adhesive layer form a consolidation zone and a uncured region.Because the uncured region of fluorescent adhesive layer and mould adjoin, after removing mould, fluorescent adhesive layer can not be caused to adhere or remain on mould.
Accompanying drawing explanation
Fig. 1 to Figure 12 is each step schematic diagram of the manufacture method of package structure for LED in embodiment of the present invention.
Main element symbol description
| Substrate | 10 |
| Electrode | 20 |
| Light-emitting diode chip for backlight unit | 30 |
| Mould | 40 |
| Fluorescent adhesive layer | 50 |
| First consolidation zone | 51 |
| Uncured region | 52 |
| Second consolidation zone | 53 |
| Package structure for LED | 100 |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
The manufacture method of a kind of package structure for LED that embodiment of the present invention provides comprises following step:
Step 1: refer to Fig. 1 and Fig. 2, provides a substrate 10, and this substrate 10 has multiple electrode 20.In the present embodiment, described substrate 10 is a rectangular panel body, and it comprises altogether 12 electrodes 20, these electrodes 20 are positioned at the middle part of substrate 10, and one group between two.Each electrode 20 embeds in substrate 10, and its upper and lower surface flushes with the upper and lower surface of substrate 10 respectively.
Step 2: refer to Fig. 3 and Fig. 4, multiple light-emitting diode chip for backlight unit 30 is arranged on electrode 20 respectively, and by routing mode, these light-emitting diode chip for backlight unit 30 are electrically connected with electrode 20 respectively, the region wherein defining multiple light-emitting diode chip for backlight unit 30 and multiple electrode 20 place is a functional area (region as shown by the dotted line in fig. 3).In the present embodiment, described functional area is positioned at the middle part of the upper surface of substrate 10.
Step 3: refer to Fig. 5, Fig. 6 and Fig. 7, arranges a molding tool 40 on the substrate 10, in mould 40, inject fluorescent glue, forms the fluorescent adhesive layer 50 of covered substrate 10 surface, multiple electrode 20 and multiple light-emitting diode chip for backlight unit 30.In the present embodiment, mould 40 is a rectangular metal framework, and it is arranged on the periphery of the upper surface of substrate 10, and fluorescent adhesive layer 50 is formed in the region that mould 40 and substrate 10 upper surface surround.Described fluorescent adhesive layer 50 is a transparent configuration, and its material can be silicon, epoxy resin etc.Fluorescent material is mixed with in described fluorescent adhesive layer 50.Described fluorescent material material can be selected from the compound of one or several combination in garnet (garnet), silicate, nitride, nitrogen oxide, phosphide, sulfide.
Step 4: refer to Fig. 8 and Fig. 9, fluorescent adhesive layer 50 on functional area is toasted, stop baking after fluorescent adhesive layer 50 on standby function region solidifies, now fluorescent adhesive layer 50 forms one first consolidation zone 51 and and is positioned at uncured region 52 around the first consolidation zone 51.Wherein the uncured region 52 of fluorescent adhesive layer 50 adjoins with mould 40.In the present embodiment, the first consolidation zone 51 be whole fluorescent adhesive layer 50 area about 3/4 and below.
Step 5: refer to Figure 10 and Figure 11, removes mould 40, carries out second time baking, make the uncured region 52 of described fluorescent adhesive layer 50 solidify to form one second consolidation zone 53 to fluorescent adhesive layer 50.
Step 6: refer to Figure 12, forms multiple package structure for LED 100 along the first consolidation zone 51 of fluorescent adhesive layer 50 and the border cutting substrate 10 of the second consolidation zone 53.
In the manufacture method of package structure for LED of the present invention, mould 40 is utilized to make after a fluorescent adhesive layer 50 covers on light-emitting diode chip for backlight unit 30 and electrode 20, first baking-curing is carried out to the part fluorescent adhesive layer 50 on the functional area of substrate 10, thus make fluorescent adhesive layer 50 form one first consolidation zone 51 and a uncured region 52.Because the uncured region 52 of fluorescent adhesive layer 50 adjoins with mould 40, after removing mould 40, fluorescent adhesive layer 50 can not be caused to adhere or remain on mould 40.
Be understandable that, for the person of ordinary skill of the art, the change and distortion that other various picture answers can be made by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (6)
1. a manufacture method for package structure for LED, it comprises following step:
The substrate that one has multiple electrode is provided;
Be arranged at respectively on substrate by multiple light-emitting diode chip for backlight unit, wherein the region at light-emitting diode chip for backlight unit and electrode place is defined as a functional area;
Substrate arranges a molding tool, in mould, forms the fluorescent adhesive layer of coated electrode and light-emitting diode chip for backlight unit;
Baking-curing is carried out to the part fluorescent adhesive layer on functional area, makes fluorescent adhesive layer form a consolidation zone and and be positioned at uncured region around this consolidation zone, then remove mould;
Second time baking is carried out to fluorescent adhesive layer, makes it all solidify;
Cutting substrate forms multiple package structure for LED.
2. the manufacture method of package structure for LED as claimed in claim 1, is characterized in that: the consolidation zone of described fluorescent adhesive layer is positioned at the middle part of described substrate, and the uncured region of described fluorescent adhesive layer and described mould adjoin.
3. the manufacture method of package structure for LED as claimed in claim 1, is characterized in that: described consolidation zone is 3/4ths of whole fluorescent adhesive layer area.
4. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: described mould is a rectangular box, it is arranged on the periphery of the upper surface of described substrate, and described fluorescent adhesive layer is formed in the region that described mould and described upper surface of base plate surround.
5. the manufacture method of package structure for LED as claimed in claim 1, is characterized in that: described fluorescent adhesive layer is a transparent colloid, and inside is mixed with fluorescent material.
6. the manufacture method of package structure for LED as claimed in claim 1, it is characterized in that: after the part fluorescent adhesive layer solidification on described functional area, form the first consolidation zone, to fluorescent adhesive layer carry out second time toast time, uncured regions curing formation second consolidation zone of described fluorescent adhesive layer, when cutting, the border along the first consolidation zone and the second consolidation zone is cut.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469247.3A CN104576903A (en) | 2013-10-10 | 2013-10-10 | Method for manufacturing light-emitting diode packaging structures |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310469247.3A CN104576903A (en) | 2013-10-10 | 2013-10-10 | Method for manufacturing light-emitting diode packaging structures |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104576903A true CN104576903A (en) | 2015-04-29 |
Family
ID=53092512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310469247.3A Pending CN104576903A (en) | 2013-10-10 | 2013-10-10 | Method for manufacturing light-emitting diode packaging structures |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576903A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676283A (en) * | 2019-10-16 | 2020-01-10 | 福州大学 | Nanowire-based mu LED display design method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087812A (en) * | 2002-08-27 | 2004-03-18 | Sanyo Electric Co Ltd | Light emitting device |
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
| CN102222757A (en) * | 2010-04-15 | 2011-10-19 | 三星Led株式会社 | Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package |
| CN103165797A (en) * | 2013-03-13 | 2013-06-19 | 上海大学 | Preformed phosphor thin film for white light-emitting diode (LED) thin film packaging and preparation method for thin film |
-
2013
- 2013-10-10 CN CN201310469247.3A patent/CN104576903A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087812A (en) * | 2002-08-27 | 2004-03-18 | Sanyo Electric Co Ltd | Light emitting device |
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
| CN102222757A (en) * | 2010-04-15 | 2011-10-19 | 三星Led株式会社 | Light emitting diode package, lighting apparatus having the same, and method for manufacturing light emitting diode package |
| CN103165797A (en) * | 2013-03-13 | 2013-06-19 | 上海大学 | Preformed phosphor thin film for white light-emitting diode (LED) thin film packaging and preparation method for thin film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110676283A (en) * | 2019-10-16 | 2020-01-10 | 福州大学 | Nanowire-based mu LED display design method |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150429 |
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| WD01 | Invention patent application deemed withdrawn after publication |