CN104576744A - Carbon nanotube thin-film transistor, AMOLED (active matrix organic light emitting diode) pixel flexible driving circuit and manufacturing method thereof - Google Patents

Carbon nanotube thin-film transistor, AMOLED (active matrix organic light emitting diode) pixel flexible driving circuit and manufacturing method thereof Download PDF

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Publication number
CN104576744A
CN104576744A CN201310508176.3A CN201310508176A CN104576744A CN 104576744 A CN104576744 A CN 104576744A CN 201310508176 A CN201310508176 A CN 201310508176A CN 104576744 A CN104576744 A CN 104576744A
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film transistor
carbon nano
tft
drain electrode
tube
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徐文亚
赵建文
钱龙
苏文明
崔铮
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Priority to CN201310508176.3A priority Critical patent/CN104576744A/en
Priority to KR1020167011925A priority patent/KR101882840B1/en
Priority to PCT/CN2014/089127 priority patent/WO2015058688A1/en
Publication of CN104576744A publication Critical patent/CN104576744A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02606—Nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a field effect thin-film transistor, an AMOLED (active matrix organic light emitting diode) pixel flexible driving circuit and a manufacturing method thereof. The AMOLED pixel flexible driving circuit comprises a switching TFT (thin-film transistor) and a driving TFT, wherein each of the switching TFT and the driving TFT comprises a substrate, as well as a gate, a source, a drain, an active conductive layer and a dielectric layer arranged on the substrate, and the active conductive layers are carbon nanotubes. The drain of the switching TFT is electrically connected with the gate of the driving TFT. The carbon nanotube thin-film transistor disclosed by the invention has relatively high migration rate and relatively high on-off ratio and well meets the demands for OLED pixel luminescence. The carbon nanotube thin-film transistor disclosed by the invention realizes the preparation of the AMOLED pixel driving circuit on the flexible substrate, and further has the advantages of simple process, convenience in operation, low cost, good repeability and capability of realizing large-scale industrial production, thereby laying a foundation for a large-area printing flexible display.

Description

Carbon nano-tube film transistor, AMOLED pixel soft drive circuit and manufacture method
Technical field
The invention belongs to field of display, particularly relate to a kind of carbon nano-tube film transistor and preparation method thereof, AMOLED pixel soft drive circuit and preparation method thereof.
Background technology
General panel display screen is made up of two essential parts, display pixel and drive circuit.In liquid crystal display, display pixel is the cell array of perfusion liquid crystal material.Drive circuit is the transistor circuit controlling each pixel switch (luminous, upset).Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) has that such as high brightness, high-contrast, ultralight ultra-thin, wide viewing angle, response are fast, low-power consumption, unique advantage such as all solid state.Therefore in flat panel display industry, receive the wide concern sent out, be considered to the display device most possibly replacing LCD.Its drive circuit is the same with LCD, is divided into passive drive and active matrix driving (Active Matrix Organic Light Emitting Diode, AMOLED).The pixel-driving circuit of displayer adopts TFT(Thin Film Transistor usually, Thin Film Transistor (TFT)), comprise two TFT, also an electric capacity can be increased for maintaining the stability of output current, one of them is as switching TFT (Switching TFT), and another is as drive TFT (Driving TFT).When scan line is opened, the grid of switching TFT applies certain voltage, electric current flows to drain electrode from grid, and be transferred to drive TFT by conductive connecting line, make drive TFT conducting, electric current flows to drain electrode from grid, and drive TFT can externally export certain electric current, can external driving OLED pixel light emission with this.In order to maintain fixing output current, drive TFT can be connected with a storage capacitance, it is capacitor charging when drive TFT work, when scan line is closed time, the voltage be stored in electric capacity still can keep drive TFT in conducting state, so can maintain the fixed current of OLED in a picture.
The TFT active material being applied to AMOLED has multiple, wherein studies the most mainly amorphous silicon (α-Si) and polysilicon (Poly-Si) two kinds, in addition, also has organic material (as pentacene etc.), monocrystalline silicon, microcrystal silicon etc.Different flat panel display pixel-driving circuits is different to the requirement of transistor performance, and the mobility of the drive circuit of colored passive type display pixel needs 0.5 cm 2v -1s -1, the mobility of colored active AMOLED display needs 2cm 2v -1s -1above.Amorphous silicon cost is low, and technique is simple, but mobility is low, substantially can not meet the demand of OLED luminescence; Polysilicon process is complicated, is limited to the equipment that ion implantation and laser crystallization etc. are complicated.In addition, from the material character of display pixel, no matter which kind of display mode can be made flexible.But the transistor due to pixel-driving circuit is based on polysilicon or amorphous silicon material, and these materials are difficult to deposit on the flexible materials such as plastics always, even if deposition is also difficult to ensure flexibility.
Summary of the invention
Object of the present invention provides a kind of carbon nano-tube film transistor and preparation method thereof, AMOLED pixel soft drive circuit and preparation method thereof, solve transistor mobility in prior art low, can not meet the demand of OLED luminescence, and in prior art, active layer material is difficult to deposit on flexible material or cannot ensures the problem of flexibility.
For achieving the above object, the invention provides following technical scheme:
The application discloses a kind of carbon nano-tube film transistor, comprising: substrate, and is formed at described suprabasil grid, source electrode, drain electrode, active conduction layer and dielectric layer, and described active conduction layer is carbon nano-tube.
Preferably, in above-mentioned carbon nano-tube film transistor, described substrate is flexible substrates, and the material of this flexible substrates is selected from PET or PI.
Preferably, in above-mentioned carbon nano-tube film transistor, be formed with channel region between described source electrode and drain electrode, described active conduction layer is positioned at described channel region, and described grid is positioned at the top of described channel region.
Preferably, in above-mentioned carbon nano-tube film transistor, the material of described dielectric layer is selected from aluminium oxide, hafnium oxide, ion glue dielectric material or electrolyte dielectric material; The material of described grid, source electrode and drain electrode is selected from gold, silver, ITO or PEDOT; The material of described substrate is selected from PET or PI.
Preferably, in above-mentioned carbon nano-tube film transistor, described carbon nano-tube is the Large Diameter Pipeline semiconductor carbon nanometer tube of enrichment, its preparation method comprises: under the condition of temperature≤0 DEG C, the carbon nanotube dispersed by caliber being 1.3 ~ 2nm, in containing in the organic solution of polymer, obtains the carbon nano-tube solution that dispersion is homogeneous; And carry out centrifugal treating to carbon nano-tube solution, centrifugal speed is greater than 10000g, centrifugation time, between 30 min-120min, isolates supernatant liquor, obtains the Large Diameter Pipeline semiconductor carbon nanometer tube of enrichment.
Preferably, in above-mentioned carbon nano-tube film transistor, the concentration of polymer contained by the carbon nano-tube solution that described dispersion is homogeneous controls at 0.0001-5 wt %; Described polymer comprises polythiofuran derivative, polyfluorene and/or polyfluorene derivative, poly-between any one or two or more combinations in phenylacetylene derivatives.
Correspondingly, disclosed herein as well is a kind of manufacture method of carbon nano-tube film transistor, comprising:
A, in substrate, make source electrode and drain electrode;
By aerosol printings, inkjet printing, dip-coating or drip painting deposition of carbon nanotubes solution in b, channel region between source electrode and drain electrode, form active conductive layer;
C, in substrate surface dielectric layer;
D, above channel region, make grid.
The invention also discloses a kind of AMOLED pixel soft drive circuit, comprise a switching TFT and a drive TFT, described switching TFT and drive TFT all adopt above-mentioned carbon nano-tube film transistor, and the drain electrode of described switching TFT is electrically connected at the grid of described drive TFT.
Preferably, in above-mentioned AMOLED pixel soft drive circuit, the drain electrode of described switching TFT is connected with layer with the grid of described drive TFT.
Correspondingly, the invention also discloses a kind of manufacture method of AMOLED pixel soft drive circuit, comprising:
S1, the source electrode that the substrate of flexibility makes switching TFT and drive TFT respectively and drain electrode;
S2, in the channel region of source electrode and drain electrode by aerosol printing, inkjet printing, dip-coating or drip and be coated with deposition of carbon nanotubes solution, form active conductive layer;
S3, surface deposition dielectric layer in the substrate of flexibility;
S4, above channel region, make grid, obtain two independently transistor devices: switching TFT and drive TFT;
S5, the electric connection drain electrode of switching TFT and the grid of drive TFT, obtain AMOLED pixel soft drive circuit.
Compared with prior art, the invention has the advantages that:
(1) active conduction layer is the semiconductor carbon nanometer tube of solubilize, and the convenient mode by printing prepares the TFT of drive circuit, and the preparation of Flexible Displays pixel is integrated, can large area printing flexible display.
(2) TFT adopt top gate structure, have back stagnant little, stability is high, power consumption is little, operating voltage is little, has 10 cm 2v -1s -1above mobility, output current is also 10 -4more than A, well meets the demand of OLED luminescence, and achieves switching TFT and be connected with the same layer of drive TFT, well avoids the problem that circuit skip floor connects.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Figure 1 shows that the structure cutaway view of field effect transistor thin-film transistor in the specific embodiment of the invention;
Figure 2 shows that the vertical view of AMOLED pixel soft drive circuit in the specific embodiment of the invention;
The electric performance test curve of single thin-film transistor a), b) for the embodiment of the present invention prepared in Fig. 3 is c), d), e), f) the electrical property curve of drive circuit.
Embodiment
Inventor is confirmed by a large amount of result of the tests, carbon nano-tube as the performance of the inorganic thin-film transistors device of active layer well beyond the basic demand of OLED luminescence.And the performance of the semiconductor Large Diameter Pipeline carbon nano-tube that polymer used in the present invention is separated is greatly improved, poor unlike silicon-based semiconductor transistor.Carbon nanotube conducting material can solubilize, soft drive circuit can be prepared by mode of printing, therefore the carbon nano-tube of solubilize can be deposited in flexible substrate material by inkjet printing, silk screen printing or roll printing mode, avoid traditional pattern process method.And OLED luminescent material itself also can make solution, prepare flexible display device by mode of printing.Therefore, the present invention can impel soft drive circuit and flexible display device to integrate, and adopts mode of printing, and prepared by large area, can reduce manufacturing cost to a great extent, impel application faster.
For this reason, the embodiment of the invention discloses a kind of carbon nano-tube film transistor, comprising: substrate, and be formed at described suprabasil grid, source electrode, drain electrode, active conduction layer and dielectric layer, described active conduction layer is carbon nano-tube.
Above-mentioned carbon nano-tube film transistor, has larger mobility and higher on-off ratio, well meets the demand of OLED pixel light emission.
Preferably, in above-mentioned carbon nano-tube film transistor, be formed with channel region between source electrode and drain electrode, described active conduction layer is positioned at described channel region, and described grid is positioned at the top of described channel region.Adopt top gate structure, have back stagnant little, stability is high, has 10 cm 2v -1s -1above mobility, output current is also 10 -4more than A, well meets the demand of OLED luminescence.
Correspondingly, the embodiment of the invention also discloses a kind of manufacture method of carbon nano-tube film transistor, comprising:
A, in substrate, make source electrode and drain electrode;
By aerosol printings, inkjet printing, dip-coating or drip painting deposition of carbon nanotubes solution in b, channel region between source electrode and drain electrode, form active conductive layer;
C, in substrate surface dielectric layer;
D, above channel region, make grid.
The embodiment of the invention also discloses a kind of AMOLED pixel soft drive circuit, comprise a switching TFT and a drive TFT, described switching TFT and drive TFT all adopt described carbon nano-tube film transistor, and the drain electrode of described switching TFT is electrically connected at the grid of described drive TFT.
Correspondingly, the embodiment of the invention also discloses a kind of manufacture method of AMOLED pixel soft drive circuit, comprising:
S1, the source electrode that the substrate of flexibility makes switching TFT and drive TFT respectively and drain electrode;
S2, in the channel region of source electrode and drain electrode by aerosol printing, inkjet printing, dip-coating or drip and be coated with deposition of carbon nanotubes solution, form active conductive layer;
S3, surface deposition dielectric layer in the substrate of flexibility;
S4, above channel region, make grid, obtain two independently transistor devices: switching TFT and drive TFT;
S5, the electric connection drain electrode of switching TFT and the grid of drive TFT, obtain AMOLED pixel soft drive circuit.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be described in detail the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
Shown in ginseng Fig. 1, in present pre-ferred embodiments, carbon nano-tube film transistor comprises flexible substrate 1, be formed at the source electrode 2 in substrate 1 and drain electrode 3, be formed at the active conduction layer 4 in channel region between source electrode 2 and drain electrode 3, be formed at the dielectric layer 5 above active conduction layer 4, and be positioned at the grid 6 above channel region.
Shown in ginseng Fig. 2, in present pre-ferred embodiments, AMOLED pixel soft drive circuit comprises a switching TFT and a drive TFT, switching TFT and drive TFT all adopt the carbon nano-tube film transistor in Fig. 1, the drain electrode 10 of switching TFT is electrically connected at the grid 30 of drive TFT by conductive materials 20, conductive materials 20 is nano silver wire, silver nano-grain, conducting polymer or other electric conducting materials.
The preparation method of above-mentioned AMOLED pixel soft drive circuit, comprising:
1) in flexible PET base, Au is deposited, as the source and drain conductive electrode of switching TFT and drive TFT, concrete, the material of source and drain conductive electrode here has multiple, such as Au, Cu, Ag, preparation method can be the technological means such as electron beam evaporation, magnetron sputtering, inkjet printing and impression.
2) under the condition of temperature≤0 DEG C, the carbon nanotube dispersed by caliber being 1.3 ~ 2nm, in containing in the organic solution of polymer, obtains the carbon nano-tube solution that dispersion is homogeneous; And carry out centrifugal treating to carbon nano-tube solution, centrifugal speed is greater than 10000g, centrifugation time, between 30 min-120min, isolates supernatant liquor, obtains the Large Diameter Pipeline semiconductor carbon nanometer tube of enrichment.Caliber is that the carbon nano-tube of 1.3 ~ 2nm preferably adopts commercialization Large Diameter Pipeline P2 Single Walled Carbon Nanotube (being prepared by arc discharge method); The concentration of polymer contained by the carbon nano-tube solution that described dispersion is homogeneous controls at 0.0001-5 wt %; Described polymer comprises polythiofuran derivative, polyfluorene and/or polyfluorene derivative, poly-between any one or two or more combinations in phenylacetylene derivatives.
3) print by inkjet printing, aerosol, soak, drip the approach such as painting, the Large Diameter Pipeline semiconductor carbon nanometer tube of separator well is deposited in the raceway groove between source-drain electrode.Luminous in order to impel the output current of drive TFT enough to light OLED pixel, the concentration of carbon pipe in raceway groove be controlled, substantially remain on every 1 μm 230 to 40 carbon nano-tube, when channel length is 20 μm, electric current can 10 -4more than A.
4) 120 oat C temperature, by ald one deck 50nm thickness oxidation hafnium (HfO x) dielectric layer material, by regulating and controlling the thickness of depositing temperature and deposition, ensureing dielectric layer leakproof and not affecting active layer material electric conductivity; Or deposition 100nmAl 2o 3and other certain thickness dielectric material
5) directly over source-drain electrode raceway groove, printed by inkjet printing or aerosol, print conductive silver nano particle, as grid, by 120 oc anneals 90min, ensures the satisfactory electrical conductivity of silver.
A) and b) be the electrical property of obtained single transistor in Fig. 3, can see that the electric current of transistor can be easy to reach 5 × 10 -4a, on-off ratio is also 10 -3above, the requirement of OLED pixel light emission can be met.
6) between the drain electrode and the grid of drive TFT of switching TFT, conductive silver nano particle or other electric conducting materials is printed, by 120 oc anneals 90min, ensures the satisfactory electrical conductivity of silver, realizes the connection of switching TFT and drive TFT.
In Fig. 3, c), d), e) and f) give the electric performance test curve of drive circuit, at V scan=-3.5 V and V dd=0.8 V, output current can to 2.5 × 10 -4a, is enough to driving and lights OLED.
So far, switching TFT and the drive TFT of the soft drive circuit of the OLED pixel produced achieve same layer and are connected, and avoid opening and problems that skip floor connection etc. causes of bottom gate TFT, and successfully driving OLED are luminous.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection range of the application.

Claims (10)

1. a carbon nano-tube film transistor, is characterized in that, comprising: substrate, and is formed at described suprabasil grid, source electrode, drain electrode, active conduction layer and dielectric layer, and described active conduction layer is carbon nano-tube.
2. carbon nano-tube film transistor according to claim 1, is characterized in that: described substrate is flexible substrates.
3. carbon nano-tube film transistor according to claim 1, is characterized in that: be formed with channel region between described source electrode and drain electrode, described active conduction layer is positioned at described channel region, and described grid is positioned at the top of described channel region.
4. carbon nano-tube film transistor according to claim 1, is characterized in that: the material of described dielectric layer is selected from aluminium oxide, hafnium oxide, ion glue dielectric material or electrolyte dielectric material; The material of described grid, source electrode and drain electrode is selected from gold, silver, ITO or PEDOT; The material of described substrate is selected from PET or PI.
5. carbon nano-tube film transistor according to claim 1, it is characterized in that: described carbon nano-tube is the Large Diameter Pipeline semiconductor carbon nanometer tube of enrichment, its preparation method comprises: under the condition of temperature≤0 DEG C, the carbon nanotube dispersed by caliber being 1.3 ~ 2nm, in containing in the organic solution of polymer, obtains the carbon nano-tube solution that dispersion is homogeneous; And carry out centrifugal treating to carbon nano-tube solution, centrifugal speed is greater than 10000g, centrifugation time, between 30 min-120min, isolates supernatant liquor, obtains the Large Diameter Pipeline semiconductor carbon nanometer tube of enrichment.
6. carbon nano-tube film transistor according to claim 5, is characterized in that: the concentration of polymer contained by the carbon nano-tube solution that described dispersion is homogeneous controls at 0.0001-5 wt %; Described polymer comprises polythiofuran derivative, polyfluorene and/or polyfluorene derivative, poly-between any one or two or more combinations in phenylacetylene derivatives.
7. the manufacture method of the arbitrary described carbon nano-tube film transistor of claim 1 to 6, is characterized in that, comprising:
A, in substrate, make source electrode and drain electrode;
By aerosol printings, inkjet printing, dip-coating or drip painting deposition of carbon nanotubes solution in b, channel region between source electrode and drain electrode, form active conductive layer;
C, in substrate surface dielectric layer;
D, above channel region, make grid.
8. an AMOLED pixel soft drive circuit, it is characterized in that, comprise a switching TFT and a drive TFT, described switching TFT and drive TFT all adopt the arbitrary described carbon nano-tube film transistor of claim 1 to 6, and the drain electrode of described switching TFT is electrically connected at the grid of described drive TFT.
9. AMOLED pixel soft drive circuit according to claim 8, is characterized in that: the drain electrode of described switching TFT is connected with layer with the grid of described drive TFT.
10. the manufacture method of the AMOLED pixel soft drive circuit described in claim 8 or 9, is characterized in that, comprising:
S1, the source electrode that the substrate of flexibility makes switching TFT and drive TFT respectively and drain electrode;
S2, in the channel region of source electrode and drain electrode by aerosol printing, inkjet printing, dip-coating or drip and be coated with deposition of carbon nanotubes solution, form active conductive layer;
S3, surface deposition dielectric layer in the substrate of flexibility;
S4, above channel region, make grid, obtain two independently transistor devices: switching TFT and drive TFT;
S5, the electric connection drain electrode of switching TFT and the grid of drive TFT, obtain AMOLED pixel soft drive circuit.
CN201310508176.3A 2013-10-24 2013-10-24 Carbon nanotube thin-film transistor, AMOLED (active matrix organic light emitting diode) pixel flexible driving circuit and manufacturing method thereof Pending CN104576744A (en)

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