CN104576675A - Manufacturing method of backside illumination type image sensor - Google Patents
Manufacturing method of backside illumination type image sensor Download PDFInfo
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- CN104576675A CN104576675A CN201510002682.4A CN201510002682A CN104576675A CN 104576675 A CN104576675 A CN 104576675A CN 201510002682 A CN201510002682 A CN 201510002682A CN 104576675 A CN104576675 A CN 104576675A
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Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a backside illumination type image sensor. The method includes the steps of etching through holes in a bonded wafer, filling the through holes with metal to form metal leads, synchronously manufacturing a metal isolation gate and a Pad layer on the back face of the bonded wafer, and filling the metal isolation gate with a color filter. According to the technical scheme, the metal layer in the bonded wafer can be led out to be integrated with the Pad layer, and the requirements for simplification and low cost of the manufacturing process are met to a certain extent; meanwhile, the metal isolation gate synchronously manufactured together with the Pad layer provides a good filling environment for the subsequent color filter, a light path is minimized, and the photoelectric characteristic and output quality of the backside illumination type image sensor are improved to a quite large extent.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of preparation method of back side illumination image sensor.
Background technology
Along with semiconductor fabrication continuous maturation development, imageing sensor more and more pooled applications in digital camera, PC Camera, picture telephone, third generation mobile phone, video conference, intelligent safety system, reversing radar of vehicle, toy and the other field such as industry, medical treatment.
Such as, cmos image sensor belong to photoelectric component and cmos image sensor due to its manufacture method and existing method for manufacturing integrated circuit compatible, the original charge coupled device of its Performance Ratio (CCD) has many good qualities simultaneously, and become the main flow of imageing sensor gradually, drive circuit and pixel can integrate by it, simplify the power consumption that hardware designs also reduces system simultaneously.Cmos image sensor, can also real time processed images information owing to just can obtain the signal of telecommunication while collection light signal, and reaction speed is fast; Simultaneously cmos image sensor also has low price, and bandwidth is comparatively large, blur prevention, and the flexibility of access and the advantage of larger activity coefficient also obtain a large amount of uses.
Different according to the position receiving light, cmos image sensor can be divided into front illuminated cmos image sensor and back-illuminated cmos image sensors, its back-illuminated cmos image sensors is relative to the usefulness that improve light receiver of the larger efficiency of front illuminated cmos image sensor, in addition in preparation method's process of back-illuminated cmos image sensors, usually formed in cmos image sensors and can carry out with other devices the metal lead wire that is electrically connected, and on back-illuminated cmos image sensors, prepare chromatic colour filter, to increase its application.
The preparation method of traditional back-illuminated cmos image sensors comprises: first carry out be in the light array approach and surface planarisation process; Then the etching of the silicon through hole of wafer rear is carried out to be drawn by metal interconnecting layer; Finally carry out the processing procedure of colored filter.
But for above-mentioned preparation method, on the one hand, light can enter adjacent pixel cell and then cause signal cross-talk, and light is longer through the path of film, reduces the photoelectric characteristic of cmos image sensor, affects the quality of output image; On the other hand, the preparation method of traditional back-illuminated cmos image sensors is comparatively complicated, and preparation cost is higher, and realize difficulty comparatively large, these defects are that those skilled in the art undesirably see.
Summary of the invention
In view of the above problems, the invention provides a kind of preparation method of back side illumination image sensor, comparatively complicated to solve back side illumination image sensor preparation method in prior art, preparation cost is higher, photoelectric characteristic and the poor defect of output quality.
The present invention solves the problems of the technologies described above adopted technical scheme:
A preparation method for back side illumination image sensor, wherein, described method comprises:
Step S1, the bonding wafer providing a back side to have photosensitive region, be provided with the first metal layer contacted with each other and the second metal level in described bonding wafer, and described second metal level is positioned on described the first metal layer;
The described bonding wafer that step S2, etching are positioned on described second metal level, to form the through hole exposed by described second metal level upper surface;
Step S3, in described through hole, fill metal, to form the metal lead wire be electrically connected with described bonding wafer external structure by described second metal level;
Step S4, at the partial rear interlock system of described bonding wafer for the metal isolated gate of Pad layer and some equi-spaced apart, and described Pad layer is formed with described metal lead wire and contacts, and described metal isolated gate is positioned on the photosensitive region of described bonding wafer;
Step S5, between adjacent metal isolated gate landfill colored filter, to form described back side illumination image sensor.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, described bonding wafer comprises the first wafer and the second wafer;
Described first wafer comprises the first substrate; Be positioned at a BEOL dielectric layer of described first substrate top surface; Be positioned at the first device layer of a described BEOL dielectric layer upper surface;
Described second wafer comprises the second substrate; Be positioned at the 2nd BEOL dielectric layer of described second substrate top surface; Be positioned at the second device layer of described 2nd BEOL dielectric layer upper surface;
Wherein, in described first device layer, be provided with described the first metal layer, in described second device layer, be provided with described second metal level, adopt front bonding technology to be bonded on described first wafer by described second wafer axial bond and form described bonding wafer.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, described step S2 also comprises:
One deck first dielectric layer and protective layer is deposited successively at the back side of described bonding wafer; etch described protective layer and form the groove exposed on described first dielectric layer portions surface; and to remain described protective layer for mask; etch described first dielectric layer and described bonding wafer successively, to form described through hole.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, described step S3 also comprises:
After the sidewall of described through hole and bottom thereof form a diffusion impervious layer, plated metal is full of described through hole, and continues to carry out flatening process process to described through hole, to form described metal lead wire.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, described step S4 also comprises:
In the upper surface deposited silicon nitride layer of described protective layer and described metal lead wire, etch described silicon nitride layer afterwards to form the first window exposed by described photosensitive region and the Second Window exposed by the upper surface of described for part metal lead wire;
Proceed deposition and the etching technics of metal, to form described Pad layer in described Second Window, and in described first window, form the metal isolated gate of described some equi-spaced apart.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, described step S5 also comprises:
Deposit one deck second dielectric layer the sidewall of the upper surface of described silicon nitride layer, metal isolated gate, the sidewall of Pad layer and Pad layer segment upper surface to be covered, colored filter described in landfill in described metal isolated gate afterwards.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, described step S5 also comprises:
A micro lens is all prepared at the upper surface of each described colored filter.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, the material of described metal is copper, aluminium, tungsten or tin.
Preferably, the preparation method of above-mentioned back side illumination image sensor, wherein, the top of described colored filter flushes with the top of described metal isolated gate.
Technique scheme tool has the following advantages or beneficial effect:
The invention discloses a kind of preparation method of back side illumination image sensor, via etch is carried out by para-linkage wafer, and fill metal and form metal lead wire, afterwards at the back side interlock system of bonding wafer for metal isolated gate and Pad layer, then by colored filter landfill in this metal isolated gate; Metal level in bonding wafer can be derived and integrate with Pad phase by this technical scheme, achieve the simplification of preparation technology, the requirement of low cost to a certain extent, what be follow-up colored filter in Pad simultaneously prepared metal isolated gate provides good landfill environment simultaneously, minimizing of the light path realized, greatly enhances photoelectric characteristic and the output quality of back side illumination image sensor.
Concrete accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, the present invention and feature, profile and advantage will become more apparent.Mark identical in whole accompanying drawing indicates identical part.Proportionally can not draw accompanying drawing, focus on purport of the present invention is shown.
Fig. 1 is preparation method's flow chart of back side illumination image sensor in the present invention;
Fig. 2 ~ 6 are preparation method's flowage structure schematic diagrames of back side illumination image sensor in the present invention.
Embodiment
Core concept of the present invention is: integrated mutually with Pad layer by the metal lead wire of back side illumination image sensor, and interlock system provides basis for the filling type processing procedure that metal isolated gate is follow-up colored filter, and then improve the simplification of imageing sensor preparation technology, reduce preparation cost and improve output image quality.
Below in conjunction with accompanying drawing and specific embodiment, the present invention is further illustrated, but not as limiting to the invention.
Be illustrated in figure 1 preparation method's flow chart of back side illumination image sensor in the embodiment of the present invention.First, provide one to have photosensitive region and be provided with the bonding wafer of metal interconnecting layer (i.e. the first metal layer and the second layer metal interconnection); Secondly para-linkage wafer etches, and forms the through hole of exposing metal interconnect layer surfaces, and in through hole, fill metal formation metal lead wire; Continue on the photosensitive region of the upper surface of bonding wafer, prepare metal isolated gate, prepare Pad layer at the upper surface of metal lead wire simultaneously; Finally carry out colored filter landfill process.
Below in conjunction with Fig. 2 ~ Fig. 6, above-mentioned steps is described in detail.
Step S1, provide a upper surface to have the bonding wafer of photosensitive region (i.e. the color filter region of subsequent metal isolated gate and landfill), be provided with the first metal layer in this bonding wafer and contact with this first metal layer and be positioned at the second metal level on the first metal layer; Wherein the first metal layer and the second metal level form an interconnecting metal layer 103.
Concrete, this bonding wafer includes the first wafer and is bonded to the second wafer on the first wafer.
Wherein, first wafer comprises the first substrate 100, is positioned at a BEOL (Back-End-Of-Line of the first substrate 100 upper surface, be called for short BEOL, also the i.e. conventional back-end process layer sayed) dielectric layer 101 and be positioned at the first device layer of BEOL dielectric layer 101 upper surface; Second wafer comprises the second substrate 106, is positioned at the 2nd BEOL dielectric layer 107 of the second substrate 106 upper surface and is positioned at the second device layer of the 2nd BEOL dielectric layer 107 upper surface.Further, above-mentioned the first metal layer is arranged in the first device layer, and the second metal level is arranged in the second device layer.
Optional but the nonrestrictive embodiment as one, adopt front bonding technology by the first wafer and the second wafer bonding, concrete, on the front being bonded to the first wafer after being overturn in the front of the second wafer, to contact with the second device layer and by the bonding wafer of the first metal layer and the second layer metal interconnection to form the first device layer.In traditional wafer preparation technology, can according to the front and back of this area routine setting wafer, as according to device architecture (as structures such as metal levels, be arranged in device layer) position that formed, one side setting wafer with device layer is front, is set to the back side in corresponding wafer with the another side of this vis-a-vis, and according to this routine, front bonding technology is adopted to form above-mentioned bonding wafer, as shown in Figure 2.
In an embodiment of the present invention, as shown in Figure 2, in bonding wafer after its formation, above-mentioned first device layer specifically comprises the 3rd dielectric layer 102 being arranged in BEOL dielectric layer 101 upper surface, the 4th dielectric layer 105 being positioned at the 3rd dielectric layer 102 upper surface, embeds the 5th dielectric layer 104 and the first metal layer, some 3rd metal levels 109 that are arranged on the 4th dielectric layer 105; Second device layer specifically comprises above-mentioned 4th dielectric layer 105, lay respectively in the 4th dielectric layer 105 and upper surface the 5th dielectric layer 104, be arranged on the 3rd dielectric layer 102 in above-mentioned 2nd BEOL dielectric layer 107 and the second metal level and some 4th metal levels 108; Wherein, the 3rd metal level 109 and the 4th metal level 108 are not in contact with each other, and the first metal layer and the second metal level realize interconnected formation interconnecting metal layer 103.
Step S2, etched the upper surface (i.e. the back side of the second wafer or the back side of bonding wafer) of this bonding wafer by silicon etching process, form the through hole 110 exposed by the upper surface of the second metal level (or interconnecting metal layer 103).
Concrete; first successively deposition one deck first dielectric layer 112 and protective layer 114 are to cover the upper surface of bonding wafer completely; then etch-protecting layer 114 forms the groove (not shown) exposed by the part surface of the first dielectric layer; afterwards; the first dielectric layer 112, bonding wafer is etched successively for mask with remaining protective layer 114; to form the through hole 110 exposed by the second metal level, as shown in Figure 2.
Step S3, in above-mentioned through hole 110, fill metal, form the metal lead wire 113 be electrically connected with bonding wafer external structure by the second metal level.
Optional but in nonrestrictive embodiment one, first one deck diffusion impervious layer 111 is formed at through hole 110, concrete, this diffusion impervious layer 111 is formed at the sidewall of through hole 110 and bottom thereof, plated metal is full of this through hole afterwards, and after flatening process process is carried out to it, form the metal lead wire 113 the second metal level and bonding wafer external structure are electrically connected, as shown in Figure 3.
Preferably, the material of above-mentioned metal is copper, aluminium, tungsten or tin and other metals.
Step S4, prepare Pad layer at the upper surface of above-mentioned metal lead wire 113, and synchronous on the photosensitive region of bonding wafer, prepare some metal isolated gates.
As a preference; after formation metal lead wire 113; first in the upper surface deposited silicon nitride layer 115 of protective layer 114 and metal lead wire 113; etch nitride silicon layer 115 is to form the first window exposed by the photosensitive region of bonding wafer rear (or say surface) afterwards; and by the Second Window that the upper surface of part metals lead-in wire 113 is exposed, form structure as shown in Figure 4.
Then, continue in through hole 110, carry out metal deposition and etching technics, to form described Pad layer 116 in a second window, in first window, form the metal isolated gate 117 of above-mentioned some equi-spaced apart simultaneously, form structure as shown in Figure 5.
Step S5, carry out the landfill process of colored filter, and the top of colored filter flushes with the top of metal isolated gate.
Optional but in nonrestrictive embodiment one, after the upper surface of remaining silicon nitride layer 115, the sidewall of metal isolated gate 117, the sidewall of Pad layer 116 and portion of upper surface deposit one deck second dielectric layer 119, landfill colored filter 118 in metal isolated gate 117, and carry out the preparation of each colored filter 118 surface micro lens 120, form structure as shown in Figure 6.
Therefore, the colored filter of filling type can realize light path and minimize, and improves photoelectric characteristic and the output quality of back side illumination image sensor, is integrated by metal level simultaneously with Pad phase, achieve the requirement of preparation technology's low cost, simplification.
In sum, the invention discloses a kind of preparation method of back side illumination image sensor, via etch is carried out by para-linkage wafer, and fill metal formation metal lead wire, afterwards at the back side interlock system of bonding wafer for metal isolated gate and Pad layer, then by colored filter landfill in this metal isolated gate; Metal level in bonding wafer can be derived and integrate with Pad phase by this technical scheme, achieve the simplification of preparation technology, the requirement of low cost to a certain extent, what be follow-up colored filter in Pad simultaneously prepared metal isolated gate provides good landfill environment simultaneously, minimizing of the light path realized, greatly enhances photoelectric characteristic and the output quality of back side illumination image sensor.
It should be appreciated by those skilled in the art that those skilled in the art are realizing described change case in conjunction with prior art and above-described embodiment, do not repeat at this.Such change case does not affect flesh and blood of the present invention, does not repeat them here.
Above preferred embodiment of the present invention is described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, the equipment wherein do not described in detail to the greatest extent and structure are construed as to be implemented with the common mode in this area; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations, this does not affect flesh and blood of the present invention.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (9)
1. a preparation method for back side illumination image sensor, is characterized in that, described method comprises:
Step S1, the bonding wafer providing a back side to have photosensitive region, be provided with the first metal layer contacted with each other and the second metal level in described bonding wafer, and described second metal level is positioned on described the first metal layer;
The described bonding wafer that step S2, etching are positioned on described second metal level, to form the through hole exposed by described second metal level upper surface;
Step S3, in described through hole, fill metal, to form the metal lead wire be electrically connected with described bonding wafer external structure by described second metal level;
Step S4, at the partial rear interlock system of described bonding wafer for the metal isolated gate of Pad layer and some equi-spaced apart, and described Pad layer is formed with described metal lead wire and contacts, and described metal isolated gate is positioned on the photosensitive region of described bonding wafer;
Step S5, between adjacent metal isolated gate landfill colored filter, to form described back side illumination image sensor.
2. the preparation method of back side illumination image sensor as claimed in claim 1, it is characterized in that, described bonding wafer comprises the first wafer and the second wafer;
Described first wafer comprises the first substrate; Be positioned at a BEOL dielectric layer of described first substrate top surface; Be positioned at the first device layer of a described BEOL dielectric layer upper surface;
Described second wafer comprises the second substrate; Be positioned at the 2nd BEOL dielectric layer of described second substrate top surface; Be positioned at the second device layer of described 2nd BEOL dielectric layer upper surface;
Wherein, in described first device layer, be provided with described the first metal layer, in described second device layer, be provided with described second metal level, adopt front bonding technology to be bonded on described first wafer by described second wafer axial bond and form described bonding wafer.
3. the preparation method of back side illumination image sensor as claimed in claim 1, it is characterized in that, described step S2 also comprises:
One deck first dielectric layer and protective layer is deposited successively at the back side of described bonding wafer; etch described protective layer and form the groove exposed on described first dielectric layer portions surface; and to remain described protective layer for mask; etch described first dielectric layer and described bonding wafer successively, to form described through hole.
4. the preparation method of back side illumination image sensor as claimed in claim 1, it is characterized in that, described step S3 also comprises:
After the sidewall of described through hole and bottom thereof form a diffusion impervious layer, plated metal is full of described through hole, and continues to carry out flatening process process to described through hole, to form described metal lead wire.
5. the preparation method of back side illumination image sensor as claimed in claim 3, it is characterized in that, described step S4 also comprises:
In the upper surface deposited silicon nitride layer of described protective layer and described metal lead wire, etch described silicon nitride layer afterwards to form the first window exposed by described photosensitive region and the Second Window exposed by the upper surface of described for part metal lead wire;
Proceed deposition and the etching technics of metal, to form described Pad layer in described Second Window, and in described first window, form the metal isolated gate of described some equi-spaced apart.
6. the preparation method of back side illumination image sensor as claimed in claim 5, it is characterized in that, described step S5 also comprises:
Deposit one deck second dielectric layer the sidewall of the upper surface of described silicon nitride layer, metal isolated gate, the sidewall of Pad layer and Pad layer segment upper surface to be covered, colored filter described in landfill in described metal isolated gate afterwards.
7. the preparation method of back side illumination image sensor as claimed in claim 1, it is characterized in that, described step S5 also comprises:
A micro lens is all prepared at the upper surface of each described colored filter.
8. the preparation method of back side illumination image sensor as claimed in claim 1, it is characterized in that, the material of described metal is copper, aluminium, tungsten or tin.
9. the preparation method of back side illumination image sensor as claimed in claim 1, it is characterized in that, the top of described colored filter flushes with the top of described metal isolated gate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281448A (en) * | 2018-01-30 | 2018-07-13 | 德淮半导体有限公司 | The manufacturing method of back side illumination image sensor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978498A (en) * | 2008-02-08 | 2011-02-16 | 美商豪威科技股份有限公司 | Backside illuminated image sensor having deep light reflective trenches |
| US20120320242A1 (en) * | 2011-03-14 | 2012-12-20 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
| CN103066088A (en) * | 2012-12-21 | 2013-04-24 | 豪威科技(上海)有限公司 | Manufacturing method of backside illuminated complementary metal-oxide-semiconductor transistor (CMOS) image sensor |
| CN103377998A (en) * | 2012-04-18 | 2013-10-30 | 台湾积体电路制造股份有限公司 | Methods and apparatus for via last through-vias |
| CN103456750A (en) * | 2012-06-01 | 2013-12-18 | 台湾积体电路制造股份有限公司 | Image sensors with a high fill-factor |
-
2015
- 2015-01-05 CN CN201510002682.4A patent/CN104576675A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978498A (en) * | 2008-02-08 | 2011-02-16 | 美商豪威科技股份有限公司 | Backside illuminated image sensor having deep light reflective trenches |
| US20120320242A1 (en) * | 2011-03-14 | 2012-12-20 | Sony Corporation | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
| CN103377998A (en) * | 2012-04-18 | 2013-10-30 | 台湾积体电路制造股份有限公司 | Methods and apparatus for via last through-vias |
| CN103456750A (en) * | 2012-06-01 | 2013-12-18 | 台湾积体电路制造股份有限公司 | Image sensors with a high fill-factor |
| CN103066088A (en) * | 2012-12-21 | 2013-04-24 | 豪威科技(上海)有限公司 | Manufacturing method of backside illuminated complementary metal-oxide-semiconductor transistor (CMOS) image sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281448A (en) * | 2018-01-30 | 2018-07-13 | 德淮半导体有限公司 | The manufacturing method of back side illumination image sensor |
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Application publication date: 20150429 |