CN104576485B - The production method and all-silicon rubber electrostatic chuck and its manufacturing method of conductivity silicon rubber electrode pattern - Google Patents
The production method and all-silicon rubber electrostatic chuck and its manufacturing method of conductivity silicon rubber electrode pattern Download PDFInfo
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- CN104576485B CN104576485B CN201410444513.1A CN201410444513A CN104576485B CN 104576485 B CN104576485 B CN 104576485B CN 201410444513 A CN201410444513 A CN 201410444513A CN 104576485 B CN104576485 B CN 104576485B
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- Prior art keywords
- silicon rubber
- electrode pattern
- conductivity silicon
- conductivity
- sheet material
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- 229920002379 silicone rubber Polymers 0.000 title claims abstract description 219
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000000203 mixture Substances 0.000 claims abstract description 88
- 239000000463 material Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims abstract description 66
- 230000008569 process Effects 0.000 claims abstract description 53
- 229920001971 elastomer Polymers 0.000 claims abstract description 50
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 230000009471 action Effects 0.000 claims abstract description 5
- -1 Polyethylene terephthalate Polymers 0.000 claims description 54
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 26
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 26
- 239000006229 carbon black Substances 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 238000005488 sandblasting Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- 239000004697 Polyetherimide Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 3
- 229920002530 polyetherether ketone Polymers 0.000 claims description 3
- 229920001601 polyetherimide Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 35
- 229920001296 polysiloxane Polymers 0.000 description 32
- 238000001723 curing Methods 0.000 description 27
- 229920001577 copolymer Polymers 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 19
- 239000001257 hydrogen Substances 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 15
- 239000011889 copper foil Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000003014 reinforcing effect Effects 0.000 description 13
- 238000001179 sorption measurement Methods 0.000 description 13
- 235000019241 carbon black Nutrition 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 238000002156 mixing Methods 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 239000004945 silicone rubber Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 125000003342 alkenyl group Chemical group 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 238000007259 addition reaction Methods 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000003292 glue Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 150000001451 organic peroxides Chemical class 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 5
- 229920002554 vinyl polymer Polymers 0.000 description 5
- 229910020388 SiO1/2 Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000013399 edible fruits Nutrition 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- 238000003801 milling Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229910020487 SiO3/2 Inorganic materials 0.000 description 2
- 229910020485 SiO4/2 Inorganic materials 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 2
- 239000006230 acetylene black Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 238000000748 compression moulding Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000007348 radical reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000012763 reinforcing filler Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 2
- 125000003944 tolyl group Chemical group 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical class [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910007161 Si(CH3)3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910020447 SiO2/2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229940069428 antacid Drugs 0.000 description 1
- 239000003159 antacid agent Substances 0.000 description 1
- 230000001458 anti-acid effect Effects 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 125000005388 dimethylhydrogensiloxy group Chemical group 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- FYIBGDKNYYMMAG-UHFFFAOYSA-N ethane-1,2-diol;terephthalic acid Chemical compound OCCO.OC(=O)C1=CC=C(C(O)=O)C=C1 FYIBGDKNYYMMAG-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical class [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001843 polymethylhydrosiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- RSNQKPMXXVDJFG-UHFFFAOYSA-N tetrasiloxane Chemical compound [SiH3]O[SiH2]O[SiH2]O[SiH3] RSNQKPMXXVDJFG-UHFFFAOYSA-N 0.000 description 1
- 125000000725 trifluoropropyl group Chemical group [H]C([H])(*)C([H])([H])C(F)(F)F 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
The present invention provides can process the production method of the conductivity silicon rubber electrode pattern of fine and closely woven electrode pattern shape with conductivity silicon rubber, the conductivity silicon rubber electrode pattern is embedded in the all-silicon rubber electrostatic chuck and its manufacturing method made of the inside of insulating silicon rubber with retractility.The production method of conductivity silicon rubber electrode pattern, it is characterized in that, sheet material is made in electroconductive rubber composition, solidify the sheet material of electroconductive rubber composition with process film layer poststack, there is no cutting action film after conductivity silicon rubber sheet material is only cut into electrode pattern shape, extra conductivity silicon rubber sheet material is removed from process film stripping.
Description
Technical field
The present invention relates to the methods that conductivity silicon rubber sheet material is processed as electrode pattern shape, in particular to precision
The production method of the conductivity silicon rubber electrode pattern of the complicated electrode pattern shape of ground processing.In addition, being related to the conduction
Property silicon rubber electrode pattern be embedded in made of the inside of insulating silicon rubber with retractility all-silicon rubber electrostatic inhale
Disk and its manufacturing method.
Background technique
Common flexible printed board, the copper-clad surface of the stacking product by the way that resist to be formed in insulating film and copper foil
Afterwards, the copper foil of not resist is removed using etching, to make electrode pattern.In addition, film distributing board is by by carbon paste, silver
The electric conductivity inks such as paste are coated on insulating film as conductor, to make electrode pattern.These are insulating films and copper foil or lead
The electrically integrated product of the electrode pattern of ink system have flexible flexibility, but almost without acquisition retractility.
In addition, the holding for the chip in the manufacturing process of semiconductor integrated circuit in a vacuum, has used Coulomb force
Mode or Johnson draw the chuck of Buick (ジ ャ Application セ ン ラ ー ベ ッ Network Johnsen-Rahbeck) power mode, institute
Call electrostatic chuck.Electrostatic chuck be make electrode pattern be embedded in insulator layer inside construction, as insulator layer, using poly-
The rubber elastomers such as the ceramics such as the organic resins such as acid imide, aluminium nitride, aluminium oxide, boron nitride, silicon nitride, silicon rubber, as electricity
Pole figure case has used the metal foils such as copper, aluminium, the electric conductivity inks such as carbon paste, silver paste.
It proposes and several conducting rubber is used for the electrode pattern of electrostatic chuck, the electromagnetic wave shielding of electronic circuit component
With the scheme of conductive layer.
Following methods are proposed in tekiaki 59-188135 bulletin (patent document 1): making that there is the resistance bigger than metal
The 1st electrode and the 2nd electrode between generate potential difference, adsorb semiconductor substrate, be surface-treated, as electrode, instantiated mixed
Enter the conductivity silicon rubber of metal powder.
It is proposed in tekiaki 63-194345 bulletin (patent document 2) and is configured with that there are appropriate on insulating film
Every the electrostatic chuck of electroconductive resin material instantiate conductive rubber, conductive plastics etc. as electroconductive resin material.
It proposes in Japanese Laid-Open Patent Publication 1-164099 bulletin (patent document 3) and is led on electric insulation layer using silk-screen printing stacking
The heat release shielding slice material of the conductive layer of electrical silicon rubber.
It proposes in special open 2000-326170 bulletin (patent document 4) and is buried inside high heat-conductive silicon rubber solidfied material
Be provided as made of the conductivity silicon rubber functioned for electrode, with can support that the support protrusion of back surface of the wafer is applied in combination
It is capable of the electrostatic chuck of flexible deformation in vertical direction.
Patent document 3 has been made the electrode pattern of conductivity silicon rubber, but the patent other than it of silk-screen printing
The production method of specific electrode pattern is not yet recorded in document.
Common electrostatic chuck is the chip that Buick power absorption electric conductivity or semiconduction are drawn using Coulomb force, Johnson
Equal substrates, the electrode pattern of dipolar configuration fully show adsorption capacity with fairly simple shape.On the other hand, insulating properties is adsorbed
Glass, resin substrate in the case of, it is necessary to generate gradient force.Gradient force is by making the electricity on electrostatic chuck surface
The power that field is uneven and shows, it is necessary to keep electrode pattern finer and closely woven, so that the width of electrode and interelectrode distance are as far as possible
It is small.But conductivity silicon rubber is soft, elongation is big, therefore it is very difficult to be processed into fine and closely woven electrode pattern.
Existing technical literature
Patent document
Patent document 1: tekiaki 59-188135 bulletin
Patent document 2: tekiaki 63-194345 bulletin
Patent document 3: Japanese Laid-Open Patent Publication 1-164099 bulletin
Patent document 4: special open 2000-326170 bulletin
Summary of the invention
Subject to be solved by the invention
The present invention is completed in view of above-mentioned actual conditions, and it is an object of the present invention to provide can be processed with conductivity silicon rubber fine and closely woven
The production method of the conductivity silicon rubber electrode pattern of electrode pattern shape buries the conductivity silicon rubber electrode pattern
With the all-silicon rubber electrostatic chuck and its manufacturing method of retractility made of the inside of insulating silicon rubber.
Means for solving the problems
The present inventor furthers investigate to achieve the goals above and repeatedly, as a result, it has been found that following methods are effective: as
The method that conductivity silicon rubber is processed as to fine and closely woven electrode pattern, by the way that sheet material, layer is made in electroconductive rubber composition
After being laminated on process film, after solidifying the sheet material of electroconductive rubber composition, without cutting action film only by electric conductivity silicon rubber
After film material is cut into electrode pattern shape, extra conductivity silicon rubber sheet material is removed from process film stripping, to make
Conductivity silicon rubber electrode pattern.Moreover, the electrode pattern of the dipolar configuration is embedded in the inside of insulating silicon rubber
All-silicon rubber electrostatic chuck has retractility, shows adsorption capacity and applying voltage between the electrode in electrode pattern, can
Various substrates are adsorbed, the present invention is completed.
Therefore, the present invention provide following conductivity silicon rubber electrode patterns production method and all-silicon rubber system it is quiet
Electric sucker and its manufacturing method.
[1] production method of conductivity silicon rubber electrode pattern, which is characterized in that by electroconductive rubber composition system
At sheet material and process film layer poststack, solidify the sheet material of electroconductive rubber composition, it only will be conductive without cutting action film
Property silicon rubber sheet material be cut into electrode pattern shape after, by extra conductivity silicon rubber sheet material from process film stripping remove.
[2] production method of conductivity silicon rubber electrode pattern described in [1], which is characterized in that drawn using cutting
Conductivity silicon rubber sheet material is cut into electrode pattern shape by instrument.
[3] production method of conductivity silicon rubber electrode pattern described in [1] or [2], which is characterized in that process film is
Resin film with heat resistance and flexibility.
[4] production method of described in any item conductivity silicon rubber electrode patterns of [1]~[3], which is characterized in that
The sheet material of electroconductive rubber composition is laminated in, sandblasting processing is carried out and roughened face to process film.
[5] production method of described in any item conductivity silicon rubber electrode patterns of [1]~[4], which is characterized in that
Conductivity silicon rubber is the solidfied material of electroconductive rubber composition made of cooperating carbon black, and volume resistivity is 0.001~1
The range of Ω m.
[6] production method of described in any item conductivity silicon rubber electrode patterns of [1]~[5], which is characterized in that
The range with a thickness of 0.03~2.0mm of conductivity silicon rubber sheet material.
[7] all-silicon rubber electrostatic chuck, which is characterized in that will be obtained using described in any item methods of [1]~[6]
Conductivity silicon rubber electrode pattern be embedded in the inside of insulating silicon rubber and form, there is retractility.
[8] manufacturing method of all-silicon rubber electrostatic chuck, which is characterized in that described in any one using [1]~[6]
The obtained face opposite with process film of conductivity silicon rubber electrode pattern of method on, insulating silicon rubber composition is laminated
Afterwards, solidify the insulating silicon rubber composition and integrated, and then by process film stripping, in the conductivity silicon rubber of release surface
On electrode pattern processed be laminated insulating silicon rubber composition after make insulating silicon rubber composition solidify and it is integrated.
The effect of invention
It is big to be able to use soft, elongation for the production method of conductivity silicon rubber electrode pattern according to the present invention
The conductivity silicon rubber sheet material of difficult processing makes fine and closely woven electrode pattern.The all-silicon rubber electrostatic for being embedded with the electrode pattern is inhaled
Disk has retractility, and the substrate of electric conductivity or semiconduction, Er Qieru can be adsorbed using Coulomb force, Johnson's drawing Buick power
Fruit shape keeps the electric field on surface uneven at fine and closely woven electrode pattern, and the substrate of insulating properties can be adsorbed using gradient force.In addition,
It is embedded with and has cooperated the electrostatic chuck of the conductivity silicon rubber electrode pattern of carbon black that can tie up under tension
Hold adsorption capacity.
Detailed description of the invention
Fig. 1 is to indicate embodiment 1,3, the figure of the comb electrodes pattern form of the dipolar configuration of Comparative Examples 1 and 2.
Fig. 2 is the figure for indicating the comb electrodes pattern form of the dipolar configuration of embodiment 2.
Specific embodiment
The present invention described further below.It should be noted that " volume resistivity " is to use to assist according to Japan rubber in the present invention
The value of test method measurement specified in meeting standard specification SRIS2301.
The production method of conductivity silicon rubber electrode pattern of the invention, which is characterized in that by uncured electric conductivity
Sheet material is made in silicone rubber compound, solidifies the sheet material of electroconductive rubber composition with process film layer poststack, without cutter
Sequence film and after conductivity silicon rubber sheet material is only cut into electrode pattern shape, by extra conductivity silicon rubber sheet material from process
Film stripping removes.
Electroconductive rubber composition used in the present invention can be general silicone rubber compound, for example, energy
Enough use has cooperated (B) electroconductive stuffing and (C) curing agent in the organosiloxane of (A) as host agent (base polymer)
Electroconductive rubber composition.
Wherein, as (A) organopolysiloxane, the organopolysiloxane indicated by following average composition formulas (1) can be enumerated.
R1 nSiO(4-n)/2 (1)
(in formula, R1Indicate unsubstituted or substituted 1 valency alkyl, the positive number that n is 1.95~2.05.)
In above-mentioned formula (1), R1For unsubstituted or substituted, preferably carbon atom number 1~10, more preferably carbon atom number 1
~81 valency alkyl specifically can enumerate the alkyl such as methyl, ethyl, propyl, the naphthenic base such as cyclopenta, cyclohexyl, vinyl,
The hydrogen moiety of the alkenyls such as allyl, aryl such as phenyl, tolyl etc. or these groups by chlorine atom, fluorine atom etc.
The halohydrocarbyl etc. that halogen atom replaces.
The positive number that n is 1.95~2.05.
In addition, being preferably comprised in the organopolysiloxane preferably 1 molecule with the alkenyl of at least two and silicon atom bonding
R1The alkenyl of interior 0.001~5 mole of %, particularly 0.01~1 mole of %.
As organopolysiloxane, specifically organic poly- silicon that main chain is made of the repetition of dimethyl siloxane units
Oxygen alkane, or a part of the dimethyl polysiloxane structure in the repetition composition for constituting the dimethyl siloxane units of its main chain
The middle organopolysiloxane for having imported vinyl, phenyl, trifluoro propyl etc., molecule chain end Triorganosiloxy or hydroxyl
The organopolysiloxane of the straight chain structure of base sealing end is preferred.As the Triorganosiloxy, trimethyl first is illustrated
Siloxy, dimethylvinylsiloxy, trivinyl siloxy etc..
Further more, the average degree of polymerization of the organopolysiloxane is 200 or more 12,000 hereinafter, in particular 300~10,
000, using the preferred 0.3Pas or more of viscosity at 25 DEG C in the measurement of rotational viscometer, if average degree of polymerization less than 200,
Sometimes the bad mechanical strength after solidifying, becomes fragile.Further more, the degree of polymerization can be as using toluene as developing solvent in the present invention
Gel permeation chromatography (GPC) analysis in polystyrene conversion weight average degree of polymerization and find out.
As (B) electroconductive stuffing, the carbon blacks such as acetylene black, furnace black, the metal powders such as silver, copper, nickel, by these can be enumerated
Coating metal is in glass powder, filler of ceramic powder etc..If conductivity silicon rubber stretched, it is possible between electroconductive stuffing
Contact separation, resistance rise.Particularly, since the partial size of metal powder is big, see that resistance caused by stretching rises significantly.
The partial size of carbon black is small, and institutional framework is flourishing, and the rising of resistance caused by stretching is small, therefore is suitable as in electric conductivity silicon of the invention
The electroconductive stuffing cooperated in rubber composition.
As the use level for the situation for using carbon black, relative to above-mentioned 100 mass parts of organopolysiloxane, preferably with 10~
The range of 100 mass parts, particularly 20~80 mass parts uses.If the use level of carbon black is less than 10 mass parts, sometimes conductive
Property become inadequate, in addition, if more than 100 mass parts, cooperation sometimes is become difficult, and molding processibility becomes very
Difference.
In addition, the use level of the electroconductive stuffing other than carbon black, excellent relative to above-mentioned 100 mass parts of organopolysiloxane
It selects with 100~1,500 mass parts, particularly the range of 200~1,000 mass parts uses.
The volume resistivity for having cooperated the conductivity silicon rubber of carbon black is preferably 0.001~1 Ω m, particularly preferably
The range of 0.005~0.1 Ω m.In order to make volume resistivity become the low resistance less than 0.001 Ω m, if it is carbon black
Height filling, realizes sometimes and becomes difficult, if volume resistivity is more than 1 Ω m, electric current is difficult to flow sometimes, cannot function as electricity
Pole uses.
In addition, having cooperated the volume resistivity of the conductivity silicon rubber of the electroconductive stuffing other than carbon black, stablize from maintenance
Resistance in terms of set out, preferably 1 × 10-7~1 × 10-3Ω m, particularly preferably 1 × 10-6~1 × 10-4The model of Ω m
It encloses.
As (C) curing agent of electroconductive rubber composition, can from usually used in the solidification of silicon rubber with
It is suitably selected into well known curing agent.That is, the curing type of electroconductive rubber composition used in the present invention, it can
To be any of organic peroxide curing type (radical reaction curing type), addition reaction curing type etc..
In the case where organic peroxide curing type silicone rubber compound, relative to above-mentioned organic poly- silicon oxygen as host agent
100 mass parts of alkane, using cooperated 0.1~10 mass parts, particularly 0.2~5 mass parts using well known radical reaction
Crosslinking used in organic peroxide, such as di-t-butyl peroxide, 2,5- dimethyl -2,5- bis- (t-butyl peroxy) oneself
The silicone rubber compound of the organic peroxides such as alkane, dicumyl peroxide.
In addition, as addition reaction curing agent, being able to use in the case of addition reaction curing type silicone rubber compound
Organic hydrogen polysiloxanes in 1 molecule containing 2 or more, particularly 3~200 with the hydrogen atom (SiH yl) of silicon atom bonding
And platinum group metal catalyst.Further more, in this case, as the organopolysiloxane of host agent, using with the organic of alkenyl
Polysiloxanes.
Addition reaction curing agent is described in more detail, as above-mentioned organic hydrogen polysiloxanes, three (dimethyl can be enumerated
Hydrogen siloxy) methyl-monosilane, three (dimethylhydrogensiloxy) phenyl silanes, 1,1,3,3- tetramethyl disiloxane,
1,3,5,7- tetramethyl-ring tetrasiloxane, methyl hydrogen cyclopolysiloxane, methyl hydrogen siloxane-dimethyl siloxane ring-type copolymerization
The two of methylhydrogenpolysi,oxane, two end trimethylsiloxies sealing end that object, two end trimethylsiloxies block
Methylsiloxane-methylhydrogensiloxacopolymer copolymer, the dimethyl polysiloxane of two terminal dimethyl group hydrogen siloxies sealing end, two
The dimethyl siloxane-methyl hydrogen siloxane copolymer of terminal dimethyl group hydrogen siloxy sealing end, two end trimethyl first silicon
The methyl of alkoxy end-capped methyl hydrogen siloxane-diphenylsiloxane copolymer, two end trimethylsiloxies sealing end
Hydrogen siloxane-diphenyl siloxane-dimethylsiloxane copolymer, by (CH3)2HSiO1/2Unit and SiO4/2Unit composition is total to
Polymers, by (CH3)2HSiO1/2Unit and SiO4/2Unit and (C6H5)SiO3/2The copolymer etc. of unit composition, these illustrate chemical combination
Part or all of methyl is taken by halogens such as aryl, the 3,3,3- trifluoro propyls such as other alkyl such as ethyl, propyl, phenyl in object
The product etc. of the substitutions such as substituted alkyl.
The molecular structure of the organic hydrogen polysiloxanes, can be straight-chain, ring-type, branch-like, tridimensional network appoint
What structure, is able to use the number of the silicon atom in 1 molecule, i.e., the degree of polymerization be 2~1,000, preferably 3~500, particularly preferably
3~300 or so organic hydrogen polysiloxanes.
The use level of the organic hydrogen polysiloxanes, preferably following amount: relative to above-mentioned organic poly- silicon as host agent
The SiH base of 1 mole of the alkenyl of oxygen alkane, organic hydrogen polysiloxanes becomes 0.5~5 mole, particularly 1~3 mole.
In addition, reactant, the chlorine of platinum black, platinum chloride, chloroplatinic acid and 1 yuan of alcohol can be illustrated as platinum group metal catalyst
The complex compound of platinic acid and olefines, diacetyl acetate platinum etc..Further more, the use level of the platinum group metal catalyst can be catalysis
Dosage, in general, total quality relative to the above-mentioned organopolysiloxane as host agent and organic hydrogen polysiloxanes, is scaled platinum
Race's amount of metal, preferably with 0.5~1,000ppm, particularly 1~500ppm range use.
In electroconductive rubber composition, as needed, can further it add in the range of not damaging the purpose of the present invention
Add reaction controlling agent, reinforcing silica, heat resistance improving agent, anti-flammability, release agent of fluorine system etc..
In electroconductive rubber composition, in order to reduce viscosity, it can further cooperate organic solvent.As organic molten
Agent specifically can enumerate the aromatic hydrocarbons such as the high toluene of the dissolubility of silicon rubber, dimethylbenzene, the aliphatic hydrocarbons such as n-hexane or this
A little mixtures etc..
As the fitting method of electroconductive rubber composition, double roller, kneader, Banbury, planet can be used
Mentioned component is kneaded by the mixing machines such as formula mixing machine, it is generally preferable that adding at once before only using curing agent.
Process film used in the present invention is able to use the resin film with heat resistance and flexibility, as in this way
Resin film specifically can be according to characteristic from polyethylene terephthalate (PET), polybutylene terephthalate (PBT)
(PBT), polycarbonate (PC), polyetherimide (PEI), polyethylene naphthalate (PEN), poly 4-methylpene-1
(PMP), it is selected in polyphenylene sulfide (PPS), polyimides (PI), polyether-ether-ketone (PEEK), fluororesin (PTFE, FEP, PFA) etc.
Various resin films.In these, price is relatively cheap, be easy to get various thickness film polyethylene terephthalate
(PET) it is suitble to.
The thickness of process film, preferably 10~300 μm of range, more preferably 25~200 μm of range.If process film
Thickness less than 10 μm, film strength is insufficient, is possible to generate fold when uncured electroconductive rubber composition is laminated, only
Process film is possible to when cured conductivity silicon rubber sheet material is cut into electrode pattern shape to be cut together, if it exceeds
300 μm, there is process film to lose flexibility, it becomes difficult to molding situation.
In addition, if carrying out sandblasting processing and asperities to the face of the laminated conductive silicone rubber compound sheet material of process film
Change, the sheet material of electroconductive rubber composition, which becomes easy, is laminated in process film.Moreover, the electric conductivity silicon after electrode pattern cutting
Rubber sheet becomes difficult to from process film stripping, when manufacturing electrostatic chuck using it, with insulating silicon rubber composition stacking
In process, it is able to suppress electrode pattern avalanche etc. and forms undesirable generation.
Next, being illustrated to the production method of conductivity silicon rubber electrode pattern.
The electroconductive rubber composition for having cooperated curing agent is separated as certain thickness sheet material using double roller, stack
Afterwards, it is laminated to the sandblasting face of process film.In turn, in order to which unfertile land separates rubber, by electroconductive rubber composition organic molten
Coating fluid made of dissolving, diluting in agent is coated with after defined thickness, organic solvent to be made to volatilize on process film.In addition, liquid
In the case where the electroconductive rubber composition of body, framework is set after specified amount is discharged on process film, with compression molding forming machine etc.
Pressurization, keeps thickness uniform.
It is laminated in the electroconductive rubber composition sheet material of process film, by heating furnace, heat pressing forming machines, is heated to provide
Temperature and make its heat cure.Addition reaction curing agent even if at room temperature if spend the time solidify, but by apply heat,
It can accelerate molding cycle.In the case where heating, preferably 80~250 DEG C of temperature, particularly at 100~200 DEG C, the time 30 seconds
~20 minutes, particularly 1~10 minute.At this point, if process film does not have heat resistance, it is likely that the change of process film occurs
Shape, cutting.
Wherein, conductivity silicon rubber sheet thickness is preferably 0.03~2.0mm, particularly preferably the model of 0.1~1.0mm
It encloses.If thickness is less than 0.03mm, the intensity of conductivity silicon rubber sheet material itself is insufficient, it becomes difficult to will be cut into electrode pattern
Extra conductivity silicon rubber after shape is from process film stripping, if thickness is more than 2.0mm, it becomes difficult to be cut into fine and closely woven
Electrode pattern.
By electroconductive rubber composition sheet material solidification after, no cutting action film and only conductivity silicon rubber sheet material is cut
It is segmented into electrode pattern shape.At this point, being able to use cutting plotter, punch die to be cut into electrode pattern shape.
Cutting plotter is roughly the same with the plotter of pen type on device, but replaces pen and be equipped with sharp keen cutter,
Conductivity silicon rubber sheet material can be cut into arbitrary shape.Complicated electrode can be made of the short time by CAD data etc.
Pattern form, the importing of device needs expense, but need not make mold according to electrode pattern shape as punch die.By adjusting
The length of the blade tip of cutter can only cut conductivity silicon rubber sheet material.
What punch die had referred to as ト system ソ Application type (Thompson type) or a ビ Network type is embedded to steel in glued board, resin plate
Sword mold and referred to as pinnacle type the mould for forming sword (corrosion sword) and by metal etch, carrying out sharp processing to blade tip
Tool.ト system ソ Application type can promptly make, and price is relatively cheap, and the draft precision of pinnacle type is excellent.With punch die by electric conductivity silicon
When rubber sheet is punched to electrode pattern shape, by adjusting the plus-pressure of bicker, conductivity silicon rubber piece can be only cut
Material.
Punch die forms sword with very fine and closely woven shape due to being difficult to, when making fine and closely woven electrode pattern, using cutting
The method for cutting plotter is suitble to.
By by the extra position of the conductivity silicon rubber sheet material for being cut into electrode pattern on process film from process film
Removing removes, so as to make conductivity silicon rubber electrode pattern.
Next, quiet to the all-silicon rubber system comprising obtained conductivity silicon rubber electrode pattern and insulating silicon rubber
Electric sucker is illustrated.
All-silicon rubber electrostatic chuck can be laminated by the conductivity silicon rubber electrode pattern on process film and be insulated
Property silicone rubber compound after, solidify the insulating silicon rubber composition and integrated, and then by process film stripping, in release surface
Conductivity silicon rubber electrode pattern on be laminated insulating silicon rubber composition after, make the insulating silicon rubber composition solidify
And it is integrated, to obtain.
Wherein, insulating silicon rubber composition used in the present invention is able to use at (a) as host agent (basis
Polymer) organopolysiloxane in cooperate the reinforcing fillings such as (b) reinforcing silica, organic siliconresin matter copolymer
Composition made of agent and (c) curing agent.
As (a) organopolysiloxane, be able to use illustrated in (A) ingredient of above-mentioned electroconductive rubber composition it is flat
The organopolysiloxane of equal composition formula (1).
Reinforcing filler used in the present invention, be in order to obtain mechanical strength and the excellent silicon rubber of insulating properties and match
It closes, preferably BET method specific surface area is 50m2/ g or more, particularly 100~400m2The reinforcing silica of/g.As the benefit
Epistasis silica can illustrate pyrolytic silicon dioxide (dry type silica), precipitated silica (wet silicon dioxide) etc..This
Outside, it can be carried out with the surface to reinforcing silica such as organopolysiloxane, organosilazanes, chlorosilane, alkoxy silane
Silicic acid anhydride.
There is no particular restriction for the additive amount of the reinforcing silica, relative to 100 mass parts of organopolysiloxane, if
Less than 5 mass parts, it is possible to sufficient reinforcing effect can not be obtained, if more than 100 mass parts, molding processibility becomes sometimes
Difference, therefore the range of preferably 5~100 mass parts, the more preferably range of 20~80 mass parts.
In insulating silicon rubber composition, reinforcing silica can be replaced and organic siliconresin matter copolymer is cooperated to make
For reinforcing filler.In addition, reinforcing silica and organic siliconresin matter copolymer can be used in combination.
Organic siliconresin matter copolymer is with R2 3SiO1/2Unit and SiO2Unit is as principal component.Wherein, R2To be unsubstituted or
The replace, monovalent hydrocarbon of preferably carbon atom number 1~10, more preferably carbon atom number 1~8, specifically, can illustrate methyl,
The alkyl such as ethyl, propyl, the naphthenic base such as cyclopenta, cyclohexyl, the alkenyls such as vinyl, allyl, the aryl such as phenyl, tolyl
Deng or these groups the halohydrocarbyl etc. that is replaced by halogen atoms such as chlorine atom, fluorine atoms of hydrogen moiety ground.
Organic siliconresin matter copolymer can only include R2 3SiO1/2Unit and SiO2Unit, can also be as desired relative to complete
Portion's organic siliconresin matter copolymer includes R with the % of 50 moles of % or less, more preferably 40 moles range below2 2SiO2/2Unit,
R2SiO3/2Unit is, it is preferable to use R2 3SiO1/2Unit and SiO2Molar ratio [the R of unit2 3SiO1/2/SiO2] it is 0.5~1.5, special
Not 0.5~1.3 organic siliconresin matter copolymer.If the molar ratio is less than 0.5, the strength reduction of silicon rubber sometimes, such as
Fruit is bigger than 1.5, reduces sometimes with the compatibility of organopolysiloxane, and cooperation becomes difficult.
In addition, organic siliconresin matter copolymer preferably comprises 1 × 10-4~5 × 10-3Mol/g, particularly 2 × 10-4~3 ×
10-3The alkenyls such as the vinyl of mol/g.If amount vinyl content is than 1 × 10-4Mol/g is few, sometimes the strength reduction of silicon rubber, if
Than 5 × 10-3Mol/g is more, it is possible to which rubber is hardened, is crisp.
Further more, organic siliconresin matter copolymer usually can make chlorosilane, alkane by using well known method in the technology
Oxysilane is hydrolyzed and is manufactured.
The use level of the organic siliconresin matter copolymer, relative to 100 mass parts of organopolysiloxane, preferably 20~200
Mass parts, particularly preferred 30~150 mass parts.If less than 20 mass parts the intensity of sufficient rubber can not be obtained sometimes, such as
Fruit is more than 200 mass parts, it is possible to which rubber is hardened, is crisp.
The curing agent (c) of insulating silicon rubber composition is able to use in (C) ingredient with electroconductive rubber composition
The identical curing agent of the curing agent of illustration, use level can also be identical, cooperate the organic of the situation of organic siliconresin matter copolymer
The use level of hydrogen polysiloxanes, preferably following amount: relative to the above-mentioned organopolysiloxane as host agent and organosilicon tree
The SiH base of 1 mole of the alkenyl of lipid conjugate, organic hydrogen polysiloxanes becomes 0.5~5 mole, particularly 1~3 mole, this
Outside, the use level of platinum group metal catalyst, relative to above-mentioned organopolysiloxane and organic hydrogen polysiloxanes as host agent
With total quality of organic siliconresin matter copolymer, be scaled platinum group metal amount, preferably with 0.5~1,000ppm, particularly 1~
The range of 500ppm uses.
In the insulating silicon rubber composition, in addition to reinforcing silica, organic siliconresin matter copolymer etc. are reinforcing
Other than filler, in the range for not damaging the purpose of the present invention, the thermal conductivity such as aluminium oxide, aluminium hydroxide, boron nitride can be added and filled out
The demoulding of the various additives such as the fillers such as material, coloring pigment, heat resistance improving agent, anti-flammability, antacid, fluorine system
Agent or the various alkoxy silanes as reinforcing silica dispersions, carbon functional silane, contain diphenyl silanodiol
There is the siloxanes etc. of silanol group.
As the fitting method of insulating silicon rubber composition, double roller, kneader, Banbury, planet can be used
Mentioned component is kneaded by the mixing machines such as formula mixing machine, it is generally preferable that adding at once before only using curing agent.
The insulating silicon rubber composition for having cooperated curing agent can be the mixed milling type less with mobility, have stream
The liquid-type of dynamic property it is any, when stacking with conductivity silicon rubber electrode pattern, electrode pattern is from process in order to prevent
The unfavorable situation of film stripping molding liquid-type can be more suitable under low pressure.
In the case of the insulating silicon rubber composition of mixed milling type, separate in advance for after certain thickness sheet material with electric conductivity
The stacking of silicon rubber electrode pattern.In addition, in the case of the insulating silicon rubber composition of liquid-type, by it in electric conductivity silicon rubber
Framework is set after specified amount is discharged on glue electrode pattern, is pressurizeed with compression molding forming machine etc., keeps thickness uniform.
For insulating silicon rubber composition, defined temperature is heated to using heating furnace, heat pressing forming machines and makes its heat
Solidification.As the cured heating condition of insulating silicon rubber composition is made, preferably 80~250 DEG C of temperature, particularly 100~
At 200 DEG C, the time 30 seconds~20 minutes, particularly 1~10 minute.
Wherein, the thickness for the insulating silicon rubber being heating and curing is preferably 0.05~10mm, particularly preferably 0.1~5mm.
If the thickness of insulating silicon rubber is excessively thin, sometimes to conductivity silicon rubber electrode pattern apply high voltage when proof voltage not
Foot, if blocked up, does not show as the adsorption capacity of electrostatic chuck sometimes.
It, will after electrode pattern is fixed in this way by conductivity silicon rubber electrode pattern and insulating silicon rubber integration
Process film stripping.In turn, on the conductivity silicon rubber electrode pattern by the release surface of process film stripping, as described above
It after insulating silicon rubber composition is laminated, heats as described above, solidifies insulating silicon rubber composition.
Further more, insulating silicon rubber composition as used herein can be used and above-mentioned molding insulating silicon rubber composition
Identical composition, it is possible to use form different insulating silicon rubber compositions.
Wherein, by the thickness of the insulating silicon rubber on the conductivity silicon rubber electrode pattern of the release surface of process film stripping
Degree can be identical as the thickness of above-mentioned molding insulating silicon rubber.
Manufacturing method more than can obtain being embedded with conductivity silicon rubber system electricity in the inside of insulating silicon rubber
The all-silicon rubber electrostatic chuck of pole figure case.
If it is desired that internal conductivity silicon rubber electrode pattern becomes dipolar configuration, the different electricity of polarity can be applied
Pressure, then play a role as electrostatic chuck, can draw Buick power absorption electric conductivity or semiconduction using Coulomb force, Johnson
The substrates such as chip.If keeping electrode pattern finer and closely woven, makes the width of electrode and interelectrode apart from as small as possible, make surface
Electric field is uneven, then the glass of insulating properties, the substrate of resin can be adsorbed using gradient force.In addition, this electrostatic chuck due to
There is retractility as rubber for all-silicon rubber system, even if therefore electrostatic chuck is stretched in the state of sorbing substrate,
Also it is able to maintain that absorption.Resistance of the conductivity silicon rubber electrode pattern of carbon black due to stretching when has especially been cooperated to rise
It is small, therefore adsorption capacity does not reduce.
[embodiment]
Embodiment described below and comparative example, specifically the present invention will be described, but the present invention is not implemented by these
Example limitation.
[embodiment 1,2]
Be made of 0.4 mole of 99.6 moles of % of dimethyl siloxane units, methyl vinyl siloxane unit %, two end
In 100 mass parts of methylvinyl-polysiloxane that end is blocked by trimethylsiloxy, average degree of polymerization 8,000, use
Pressure kneader cooperates 60 mass parts of acetylene black as carbon black, is kneaded and makes it uniformly, makes rubber compound.Relative to the mixing
100 mass parts of glue add vinylsiloxane complex compound (1 mass % of platinum content) 0.1 mass parts of chloroplatinic acid, as platinum catalysis
0.05 mass parts of ethynylcyclohexanol and following formula (2) of the controlling agent of agent
(CH3)3SiO[(CH3)2SiO]18[(CH3)HSiO]20Si(CH3)3
(2)
2 mass parts of methylhydrogenpolysi,oxane shown, are sufficiently kneaded with double roller, modulate uncured conductivity silicon rubber combination
Object.
The electroconductive rubber composition is separated with calendering formation machine as after thick 0.2mm, in poly terephthalic acid second two
It is laminated on the sandblasting face of 100 μm of thickness of process film of alcohol ester, by 5 minutes in 160 DEG C of heating furnace, makes electric conductivity silicon rubber
Glue composition solidification.The volume resistivity of the conductivity silicon rubber sheet material is 0.03 Ω m.
Next, not cutting polyethylene terephthalate process film and only by electric conductivity using cutting plotter
The comb electrodes pattern form that silicon rubber sheet material is cut into the dipolar configuration of 0.5mm between the wide 0.6mm of electrode of Fig. 1, electrode (is implemented
Example 1) and the wide 0.5mm of electrode of Fig. 2, electrode between 0.35mm dipolar configuration comb electrodes pattern form (embodiment 2).It will be electric
Interpolar, electrode pattern peripheral part unwanted conductivity silicon rubber part from polyethylene terephthalate process film shell
From removing, conductivity silicon rubber electrode pattern is made.
By insulating silicon rubber material KE-1935A/B [trade name, letter of the liquid of organic siliconresin matter copolymer cooperation
More chemical industry (strain) is made] A and after B mixes with the ratio of 1:1, deaeration is carried out to mixed air, modulate it is uncured absolutely
The silicone rubber compound of edge.By the insulating silicon rubber composition on the conductivity silicon rubber electrode pattern on process film
After specified amount is discharged, it is arranged in the framework of stainless steel of thick 0.7mm, from the upper thickness for placing polyethylene terephthalate
The sandblasting surface side of 100 μm of film clamps the upper and lower of them with the stainless steel plate of 2 thickness 3mm.Next, being hot pressed into using 50 tons
Type machine is pressurizeed under conditions of pressure 3MPa, 120 DEG C of temperature, is heated 10 minutes, so that insulating silicon rubber composition be made to solidify
Afterwards, the polyethylene terephthalate on two sides is film-made removing, by conductivity silicon rubber electrode pattern and insulating properties silicon rubber
Glue integration.On the conductivity silicon rubber electrode pattern of the insulating silicon rubber with a thickness of 0.5mm.
In insulating silicon rubber material KE-561-U [trade name, SHIN-ETSU HANTOTAI of the mixed milling type of reinforcing silica cooperation
Learn industrial (strain) system] organic peroxide paste C-8 [trade name, SHIN-ETSU HANTOTAI chemical industry of the addition as curing agent in 100 mass parts
(strain) system] 2 mass parts separate after twin-roll mixing as after thick 0.2mm, at 100 μm of thickness of polyethylene terephthalate
Film sandblasting face on be laminated, modulate uncured insulating silicon rubber composition sheet material.
The insulating silicon rubber composition sheet material is fitted in the conductivity silicon rubber electrode of the integrated product of front
After in pattern plane, is pressurizeed, heated 10 minutes under conditions of pressure 5MPa, 160 DEG C of temperature using 50 tons of heat pressing forming machines, thus
Solidify insulating silicon rubber composition.Polyethylene terephthalate is film-made and is removed, in drying machine at 200 DEG C of temperature
Heat treatment 4 hours, after removing volatile ingredient, the aperture in the A of Fig. 1 and Fig. 2 and the insulating silicon rubber of B location makes conduction
Property silicone rubber expose.
By above process, it is produced in the insulating silicon rubber of thick 0.2mm and thickness 0.5mm and has buried electric conductivity silicon rubber
The easy electrostatic chuck of the all-silicon rubber of glue electrode pattern.
[embodiment 3]
The liquid for cooperating organic siliconresin matter copolymer insulating silicon rubber material KE-1934A/B [trade name,
SHIN-ETSU HANTOTAI's chemical industry (strain) system] A and 100 mass parts that are mixed with the ratio of 1:1 of B in, addition mixing is used as electroconductive stuffing
So that bead is coated with the silver-colored bead S-5000-S3 [trade name, Port ッ タ ー ズ バ ロ テ ィ ー ニ (strain) system] 250 of silver
Mass parts modulate the uncured electroconductive rubber composition of liquid.
After the electroconductive rubber composition deaeration, in 100 μm of thickness of process of polyethylene terephthalate
Specified amount is discharged on the sandblasting face of film.The framework of the stainless steel of thickness 0.2mm is set, from upper placement polyethylene terephthalate
The gloss surface side of 100 μm of thickness of film of ester clamps the upper and lower of them with the stainless steel plate of 2 thickness 3mm.It is hot pressed into using 50 tons
Type machine is pressurizeed under conditions of pressure 5MPa, 120 DEG C of temperature, is heated 10 minutes, so that electroconductive rubber composition be made to solidify
Afterwards, the polyethylene terephthalate of gloss surface side is film-made removing.The conductivity silicon rubber sheet material with a thickness of 0.2mm,
Volume resistivity is 0.0001 Ω m.
Next, using cutting plotter, polyethylene terephthalate process film is not cut and by electric conductivity silicon
Rubber sheet is cut into the comb electrodes pattern form of the dipolar configuration of 0.5mm between the wide 0.6mm of electrode of Fig. 1, electrode.By electrode
Between, the unwanted conductivity silicon rubber part of electrode pattern peripheral part is from polyethylene terephthalate process film stripping
It removes, makes conductivity silicon rubber electrode pattern.
Other than the production of conductivity silicon rubber electrode pattern, using with embodiment 1,2 same processes, be produced on
The letter of the all-silicon rubber of conductivity silicon rubber electrode pattern has been buried in the insulating silicon rubber of thick 0.2mm and thickness 0.5mm
Just electrostatic chuck.
[comparative example 1]
In insulating silicon rubber material KE-561-U [aforementioned] 100 mass parts, the organic peroxy as curing agent is added
Compound pastes C-8 [aforementioned] 2 mass parts, after twin-roll mixing, separates as after thick 0.5mm, in polyethylene terephthalate system
100 μm of thickness of film sandblasting face on be laminated, modulate uncured insulating silicon rubber composition sheet material.
The insulating silicon rubber composition sheet material is arranged in the framework of stainless steel of thick 0.5mm, is gathered from upper place
The gloss surface side of 100 μm of thickness of film of ethylene glycol terephthalate clamps the upper of them with the stainless steel plate of 2 thickness 3mm
Under.Next, pressurizeed, heated 10 minutes under conditions of pressure 5MPa, 160 DEG C of temperature using 50 tons of heat pressing forming machines, thus
After solidifying insulating silicon rubber composition, the polyethylene terephthalate on two sides is film-made removing, has obtained insulating properties
Silicon rubber sheet material.
On the glassy surface of the insulating silicon rubber sheet material, using the screen printing plate of 150 mesh of the pattern form of Fig. 1,
After the uncured electroconductive rubber composition silk-screen printing for the liquid modulated in embodiment 3, in 120 DEG C of drying machine
It places 10 minutes, solidifies electroconductive rubber composition, make the conductivity silicon rubber electrode pattern of thickness 0.04mm.This is led
The volume resistivity of electrical silicon rubber is 0.0002 Ω m.Electrode pattern avalanche when due to pressurization, hot briquetting, in nothing
Heated under pressure, thus it is higher than the volume resistivity of the conductivity silicon rubber of embodiment 3.In addition, the periphery in electrode pattern is seen
To the fine bumps of mesh trace.It is possible that generating electric discharge from the protrusion of the protrusion, interelectrode proof voltage is reduced.
In insulating silicon rubber material KE-561-U [aforementioned] 100 mass parts, the organic peroxy as curing agent is added
Compound pastes C-8 [aforementioned] 2 mass parts, after twin-roll mixing, separates as after thick 0.2mm, in polyethylene terephthalate system
100 μm of thickness of film sandblasting face on be laminated, modulate uncured insulating silicon rubber composition sheet material.
The insulating silicon rubber composition sheet material is fitted into conductivity silicon rubber using with embodiment 1,2 same processes
It on electrode pattern face processed, pressurizes, be heating and curing, be produced in the insulating silicon rubber of thick 0.2mm and thickness 0.5mm and buried conduction
Property silicon rubber electrode pattern all-silicon rubber easy electrostatic chuck.
[comparative example 2]
In insulating silicon rubber material KE-561-U [aforementioned] 100 mass parts, the organic peroxy as curing agent is added
Compound pastes C-8 [aforementioned] 2 mass parts, after twin-roll mixing, separates as after thick 0.5mm, in polyethylene terephthalate system
100 μm of thickness of film sandblasting face on be laminated, modulate uncured insulating silicon rubber composition sheet material.
It is coated with プ ラ イ マ ー No.34T [trade name, SHIN-ETSU HANTOTAI's chemical industry (strain) system] in thick 40 μm of electrolytic copper foil,
It air-dries 30 minutes at room temperature.Uncured insulating silicon rubber composition sheet material is fitted in the priming paint coated face of copper foil, is used
50 tons of heat pressing forming machines are pressurizeed under conditions of pressure 5MPa, 160 DEG C of temperature, are heated 10 minutes, to make insulating silicon rubber
Composition solidification after integrated with copper foil, polyethylene terephthalate is film-made and is removed.
Next, with pattern form shown in Fig. 1, after resist is coated on copper foil, by chemical etching by nonreactive
The copper foil for losing agent removes.Resist is cleaned and is removed, copper foil electrode pattern is formd on insulating silicon rubber sheet material.
In insulating silicon rubber material KE-561-U [aforementioned] 100 mass parts, the organic peroxy as curing agent is added
Compound pastes C-8 [aforementioned] 2 mass parts, after twin-roll mixing, separates as after thick 0.2mm, in polyethylene terephthalate system
100 μm of thickness of film sandblasting face on be laminated, modulate uncured insulating silicon rubber composition sheet material.
Copper foil electrode pattern surface coating プ ラ イ マ ー No.34T on above-mentioned insulating silicon rubber sheet material is [preceding
State], after air-drying 30 minutes at room temperature, uncured insulating silicon rubber composition sheet material is bonded, is hot pressed into using 50 tons
Type machine is pressurizeed under conditions of pressure 5MPa, 160 DEG C of temperature, is heated 10 minutes, so that insulating silicon rubber composition be made to consolidate
Change, polyethylene terephthalate is film-made and is removed.It is heat-treated 4 hours at 200 DEG C of temperature in drying machine, will volatilize ingredient
After removing, the aperture in the A of Fig. 1 and the insulating silicon rubber of B location exposes copper-clad surface.
By above process, it is produced in the insulating silicon rubber of thick 0.2mm and thickness 0.5mm and has buried copper foil electrode
The easy electrostatic chuck of pattern.
[evaluation method for showing degree of adsorption capacity]
Apply DC voltage+2kV from DC power supply to the portion of terminal of the A of each electrostatic chuck, applies direct current to the portion of terminal of B
Voltage -2kV respectively confirms relatively the insulating silicon rubber surface side of thick 0.2mm and the insulating silicon rubber surface side of thickness 0.5mm
(insulating properties is film-made in thick 50 μm of copper foil (electric conductivity adherend) and thick 50 μm of polyethylene terephthalate (PET)
Adherend) adsorption capacity show degree, evaluated according to following standards.In turn, by each electrostatic chuck in the direction of A-B
It is kept in the state of stretching 50%, similarly confirm adsorption capacity shows degree, evaluates according to following standards.Show the result in table
1 and table 2.
◎: show strong adsorption capacity
Zero: showing adsorption capacity
△: show weak adsorption capacity
×: do not show adsorption capacity
[table 1]
[table 2]
The suction for thick 50 μm of polyethylene terephthalate film of the electrostatic chuck of embodiment 1 and embodiment 2
Attached power, embodiment 2 slightly show by force.
Embodiment 3 and comparative example 1 have used Yin Bo as electroconductive stuffing in the conductivity silicon rubber of electrode pattern
The electrostatic chuck of glass pearl, when stretching, contact separation between electroconductive stuffing, volume resistivity rises, and adsorption capacity does not show.
The electrostatic chuck for having used copper foil electrode pattern of comparative example 2, slightly stretches, but fail on the direction of A-B
50% stretches.
Claims (8)
1. the production method of conductivity silicon rubber electrode pattern, which is characterized in that piece is made in electroconductive rubber composition
The sheet material of the electroconductive rubber composition is laminated in process film progress sandblasting processing and roughened face by material, later,
Solidify the sheet material of electroconductive rubber composition, no cutting action film and conductivity silicon rubber sheet material is only cut into electrode
After pattern form, extra conductivity silicon rubber sheet material is removed from process film stripping.
2. the production method of conductivity silicon rubber electrode pattern described in claim 1, which is characterized in that drawn using cutting
Conductivity silicon rubber sheet material is cut into electrode pattern shape by instrument.
3. the production method of conductivity silicon rubber electrode pattern of any of claims 1 or 2, which is characterized in that process film is
Resin film with heat resistance and flexibility.
4. the production method of conductivity silicon rubber electrode pattern as claimed in claim 3, which is characterized in that resin film be selected from
Polyethylene terephthalate, polybutylene terephthalate (PBT), polycarbonate, polyetherimide, poly- naphthalenedicarboxylic acid second two
Alcohol ester, poly 4-methylpene-1, polyphenylene sulfide, polyimides, polyether-ether-ketone and fluororesin resin film.
5. the production method of conductivity silicon rubber electrode pattern of any of claims 1 or 2, which is characterized in that electric conductivity silicon
Rubber is the solidfied material of electroconductive rubber composition made of cooperating carbon black, and volume resistivity is 0.001~1 Ω m's
Range.
6. the production method of conductivity silicon rubber electrode pattern of any of claims 1 or 2, which is characterized in that electric conductivity silicon
The range with a thickness of 0.03~2.0mm of rubber sheet.
It is that will be obtained using described in any item methods of claim 1~6 7. all-silicon rubber electrostatic chuck, is characterized in that
To conductivity silicon rubber electrode pattern be embedded in the inside of insulating silicon rubber made of, have retractility.
8. the manufacturing method of all-silicon rubber electrostatic chuck, which is characterized in that described in any one using claim 1~6
The obtained face opposite with process film of conductivity silicon rubber electrode pattern of method on, insulating silicon rubber composition is laminated
Afterwards, solidify the insulating silicon rubber composition and integrated, and then by process film stripping, in the conductivity silicon rubber of release surface
On electrode pattern processed be laminated insulating silicon rubber composition after make insulating silicon rubber composition solidify and it is integrated.
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| JP2013-216366 | 2013-10-17 | ||
| JP2013216366A JP6217303B2 (en) | 2013-10-17 | 2013-10-17 | Method for producing electrode pattern made of conductive silicone rubber, all-silicone rubber electrostatic chuck and method for producing the same |
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| CN104576485A CN104576485A (en) | 2015-04-29 |
| CN104576485B true CN104576485B (en) | 2018-12-07 |
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| JP (1) | JP6217303B2 (en) |
| KR (1) | KR102287692B1 (en) |
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| KR101661461B1 (en) * | 2015-07-05 | 2016-09-30 | 경규창 | Remote input apparatus for touchscreen |
| JP6773457B2 (en) * | 2016-06-07 | 2020-10-21 | 株式会社ディスコ | How to process electrostatic chuck sheet and wafer |
| US20190115241A1 (en) * | 2017-10-12 | 2019-04-18 | Applied Materials, Inc. | Hydrophobic electrostatic chuck |
| KR20190100980A (en) * | 2017-12-27 | 2019-08-30 | 캐논 톡키 가부시키가이샤 | Electrostatic chuck, film forming apparatus, substrate adsorption method, film forming method and manufacturing method of electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001291680A (en) * | 2000-04-10 | 2001-10-19 | Shin Etsu Chem Co Ltd | Electrostatic chuck for ion implanter |
| CN101615376A (en) * | 2008-06-25 | 2009-12-30 | 索尼株式会社 | Display device |
| JP2010061857A (en) * | 2008-09-01 | 2010-03-18 | Shin Etsu Polymer Co Ltd | Method of manufacturing sheet-shaped connector |
| CN101803000A (en) * | 2007-08-02 | 2010-08-11 | 株式会社爱发科 | Method of manufacturing electrostatic chuck mechanism |
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| JPS59188135A (en) | 1983-04-08 | 1984-10-25 | Fujitsu Ltd | Attracting method of semiconductor substrate |
| JPS60207276A (en) * | 1984-03-30 | 1985-10-18 | イナバゴム株式会社 | Method of producing anisotropic conductive connector |
| JPH0652758B2 (en) | 1987-02-09 | 1994-07-06 | 日本電信電話株式会社 | Electrostatic check |
| JPH01164099A (en) | 1987-12-21 | 1989-06-28 | Shin Etsu Chem Co Ltd | Heat-dissipating shield sheet |
| JP4121216B2 (en) | 1999-05-20 | 2008-07-23 | 信越化学工業株式会社 | Elastically deformable electrostatic chuck and manufacturing method thereof |
| TWI420579B (en) * | 2005-07-12 | 2013-12-21 | Creative Tech Corp | And a foreign matter removing method for a substrate |
| JP2009043712A (en) * | 2007-07-18 | 2009-02-26 | Toray Ind Inc | Method of manufacturing membrane electrode assembly |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001291680A (en) * | 2000-04-10 | 2001-10-19 | Shin Etsu Chem Co Ltd | Electrostatic chuck for ion implanter |
| CN101803000A (en) * | 2007-08-02 | 2010-08-11 | 株式会社爱发科 | Method of manufacturing electrostatic chuck mechanism |
| CN101615376A (en) * | 2008-06-25 | 2009-12-30 | 索尼株式会社 | Display device |
| JP2010061857A (en) * | 2008-09-01 | 2010-03-18 | Shin Etsu Polymer Co Ltd | Method of manufacturing sheet-shaped connector |
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| KR102287692B1 (en) | 2021-08-06 |
| JP2015079863A (en) | 2015-04-23 |
| KR20150044814A (en) | 2015-04-27 |
| TW201523784A (en) | 2015-06-16 |
| JP6217303B2 (en) | 2017-10-25 |
| TWI614839B (en) | 2018-02-11 |
| CN104576485A (en) | 2015-04-29 |
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