CN104576388A - Fin FET (field-effect transistor) and production method thereof - Google Patents
Fin FET (field-effect transistor) and production method thereof Download PDFInfo
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- CN104576388A CN104576388A CN201310479778.0A CN201310479778A CN104576388A CN 104576388 A CN104576388 A CN 104576388A CN 201310479778 A CN201310479778 A CN 201310479778A CN 104576388 A CN104576388 A CN 104576388A
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- epitaxial loayer
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- 230000005669 field effect Effects 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 86
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000009795 derivation Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- -1 disilane Chemical class 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- MJBPUQUGJNAPAZ-UHFFFAOYSA-N Butine Natural products O1C2=CC(O)=CC=C2C(=O)CC1C1=CC=C(O)C(O)=C1 MJBPUQUGJNAPAZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 150000001722 carbon compounds Chemical group 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- UCMVNBCLTOOHMN-UHFFFAOYSA-N dimethyl(silyl)silane Chemical compound C[SiH](C)[SiH3] UCMVNBCLTOOHMN-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
The invention discloses a fin FET (field-effect transistor) and a production method thereof. The fin FET comprises a dielectric layer, fins, a gate structure and epitaxial layers, wherein the dielectric layer and the fins are formed on a semiconductor substrate; the epitaxial layers are arranged on the fins; the epitaxial layers comprise a first epitaxial layer and a second epitaxial layer which are sequentially deposited in source-drain region trenches of the fins, and the carbon doping concentration of the first epitaxial layer is smaller than that of the second epitaxial layer. Rectangular outlines cannot be formed in a growing process of the epitaxial layers, the lateral derivation distance of each epitaxial layer is shorter, so that adjacent epitaxial layers cannot be stuck together, and the technical problem that the distances between every two epitaxial layers grown on the adjacent fins is reduced excessively due to the fact that rectangular or approximately rectangular outlines are formed on the outer surfaces of the epitaxial layers grown on the fins in the prior art is solved.
Description
Technical field
The application relates to semiconductor fabrication, in particular to a kind of fin field effect pipe and preparation method thereof.
Background technology
Along with the development of semiconductor technology, the performance of semiconductor device steadily improves.Structure, semiconductor device also develops into multiple-grid semiconductor device by single gate semiconductor device.At present, fin formula field effect transistor (Fin field-effect transistors; Fin FETs) be widely used as the representative of multiple-grid semiconductor device.
Fig. 1 shows the perspective view of existing fin field effect pipe.As shown in Figure 1, existing fin field effect pipe comprises Semiconductor substrate 10 ', and Semiconductor substrate 10 ' is formed outstanding fin 14 ', and dielectric layer 11 ' covers a part of sidewall of Semiconductor substrate 10 ' surface and fin 14 '; Grid structure is across on fin 14 ', and this grid structure comprises gate electrode 12 ' and is positioned at the gate electrode spacer 13 ' of gate electrode 12 ' both sides.
Similar to planar transistor, source area on the fin 14 ' of fin formula field effect transistor and drain region can form source electrode and drain electrode.But, because the fin of fin formula field effect transistor is usually very narrow, current focusing (current crowding) phenomenon therefore can be there is.In addition, contact plunger to be placed in narrower fin sources/drain electrode very difficult.In order to solve the narrower problem of fin volume, prior art adopts epitaxy technique to define epitaxial semiconductor layer on fin, thus adds the volume of fin.
But the manufacture method utilizing epitaxy technique to increase fin volume exists some shortcomings, further illustrate the shortcoming of existing manufacture craft existence below in conjunction with Fig. 2.Structure shown in Fig. 2 is the fin formula field effect transistor structural representation grown epitaxial loayer on the basis of Fig. 1 after, is the structural representation of Fig. 1 perpendicular to A-A direction.Wherein, epitaxial loayer 22 ' grows on the source-drain area of fin 14 '.Compared with traditional planar transistor, the source-drain area of fin formula field effect transistor is a part for fin 14 ', and its volume is not by shallow channel isolation area (shallow trench isolation; STI) limit to, can need according to semiconductor device design the volume adjusting source-drain area.But because epitaxial loayer 22 ' is normally formed by pure silicon, growth rate like this on (111) crystal plane is less than other crystal planes, epitaxial loayer 22 ' meeting horizontal expansion, and forming multiple face 8 ' (facet), this can cause the lateral separation between epitaxial loayer that adjacent fin grows exceedingly to reduce.Moreover as shown in Figure 3, because the lateral separation between epitaxial loayer that adjacent fin grows exceedingly reduces, the fusion of the epitaxial loayer 22 ' that adjacent fin 14 ' grows also can cause undesirable space 30 ' to produce.
Summary of the invention
The application aims to provide a kind of fin field effect pipe and preparation method thereof, can produce the profile of rectangle (or approximate rectangular) and the spacing of the epitaxial loayer that the adjacent fin caused grows crosses the technical problem of reduction to solve in prior art to grow at the outer surface of fin upper epitaxial layer.
The manufacture method of the fin field effect pipe that the application provides comprises: S101, forms fin on a semiconductor substrate, and forms grid structure on fin; S102, fin forms source-drain area, and carries out etching formation source-drain area groove to source-drain area; S103, deposits the first epitaxial loayer and the second epitaxial loayer successively in source-drain area groove, and wherein, the first epitaxial loayer is that to be less than the second epitaxial loayer be carbon doping concentration to carbon doping concentration.
The fin field effect pipe that the application provides, the epitaxial loayer comprising formation dielectric layer on a semiconductor substrate and fin, grid structure and be arranged on fin, epitaxial loayer is included in the first epitaxial loayer and the second epitaxial loayer that deposit successively in the source-drain area groove of fin, wherein, the first epitaxial loayer is that to be less than the second epitaxial loayer be carbon doping concentration to carbon doping concentration.
The technical scheme of application the application, epitaxial loayer is made up of the first epitaxial loayer and the second epitaxial loayer, and wherein, the first epitaxial loayer is that to be less than the second epitaxial loayer be carbon doping concentration to carbon doping concentration.Owing to fin being provided with source-drain area groove, and the carbon content concentration of the first epitaxial loayer directly contacted with this source-drain area groove is lower, and the second epitaxial loayer carbon content concentration arranged on the first epitaxial layer is higher, such epitaxial loayer would not form multiple in the process of growth, also the profile of rectangle would not be formed, the distance that epitaxial loayer laterally derives is shorter, adjacent epitaxial loayer would not stick together, thus overcome in prior art to grow and can produce the profile of rectangle (or approximate rectangular) and the spacing of the epitaxial loayer that the adjacent fin caused grows crosses the technical problem of reduction at the outer surface of fin upper epitaxial layer.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the exemplary embodiment of the application and explanation thereof, for explaining the application, do not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the sectional perspective structural representation of existing fin field effect pipe;
Fig. 2 shows the fin field effect pipe cross-sectional view perpendicular to Figure 1A-A direction;
Fig. 3 shows the fin field effect pipe cross-sectional view of adjacent fin perpendicular to A-A direction;
Fig. 4 shows the schematic flow sheet of the fin field effect pipe manufacture method that the application's execution mode provides;
Fig. 5 shows the cross-sectional view (the A-A direction along in Fig. 1) forming source-drain area groove in fin source-drain area etching;
Fig. 6 shows the cross-sectional view form the first epitaxial loayer in the source-drain area groove of Fig. 5 after;
Fig. 7 shows the cross-sectional view after the first epitaxial loayer in figure 6 being formed the second epitaxial loayer;
Fig. 8 shows according to the structure vertical of Fig. 7 in the cross-sectional view in A-A direction;
Fig. 9 shows the changing trend diagram of concentration of carbon in the first epitaxial loayer and the second epitaxial loayer in the fin field effect pipe epitaxial loayer that the application's embodiment provides;
Figure 10 shows the changing trend diagram of concentration of carbon in the first epitaxial loayer and the second epitaxial loayer in the fin field effect pipe epitaxial loayer that another embodiment of the application provides; And
Figure 11 shows the changing trend diagram of concentration of carbon in the first epitaxial loayer and the second epitaxial loayer in the fin field effect pipe epitaxial loayer that the another embodiment of the application provides.
Embodiment
It should be noted that, when not conflicting, the execution mode in the application and the feature in execution mode can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with execution mode.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
As can be seen from the introduction of background technology, there is the technical problem that the lateral separation between epitaxial loayer that adjacent fin grows excessively reduces in existing fin field effect pipe, so present applicant proposes a kind of fin field effect pipe manufacture method, the schematic flow sheet of this manufacture method as shown in Figure 4.
The manufacture method of this fin field effect pipe, comprises S101, forms fin on a semiconductor substrate, and forms grid structure on fin; S102, fin forms source-drain area, and carries out etching formation source-drain area groove to source-drain area; S103, deposits the first epitaxial loayer and the second epitaxial loayer successively in source-drain area groove, and wherein, the first epitaxial loayer is that to be less than the second epitaxial loayer be carbon doping concentration to carbon doping concentration.
The technical scheme of application the application, epitaxial loayer is different from the setting of existing epitaxial loayer, is made up of the first epitaxial loayer and the second epitaxial loayer, and the first epitaxial loayer is that to be less than the second epitaxial loayer be carbon doping concentration to carbon doping concentration.Owing to fin being provided with source-drain area groove, such epitaxial loayer can stress on source-drain area groove effectively, improves the performance of fin field effect pipe, because the carbon content concentration of the first epitaxial loayer directly contacted with source-drain area groove is lower, and the second epitaxial loayer carbon content concentration arranged on the first epitaxial layer is higher, such epitaxial loayer is in the process of growth, due to the existence of carbon, destroy the crystalline structure of the original rule of silicon, would not multiple be formed, also rectangular profile would not be formed, the distance of epitaxial loayer cross growth is shorter, adjacent epitaxial loayer would not stick together, thus overcome rectangle (or approximate rectangular) profile of existing epitaxial loayer and the spacing of the epitaxial loayer that the adjacent fin caused the grows technical problem of excessively reducing.In addition, because the carbon content concentration of the first epitaxial loayer is lower, and the second epitaxial loayer carbon content concentration arranged on the first epitaxial layer is higher, is so also conducive to the good combination of epitaxial loayer and fin.
The fin field effect pipe manufacture method that the application provides is further illustrated below in conjunction with accompanying drawing 5-7.
Perform step S101, form fin on a semiconductor substrate, and on substrate, form dielectric layer and grid structure.
The fin field effect pipe stereochemical structure of the application can adopt structure as shown in Figure 1.Be formed with outstanding fin on a semiconductor substrate, fin can by obtaining after Semiconductor substrate etching, certainly, also can be formed by the top epitaxial growth of substrate, dielectric layer covers a part for the surface of Semiconductor substrate and the sidewall of fin; Grid structure, across on fin, covers top and the sidewall of fin, and grid structure comprises gate electrode and is positioned at the gate electrode spacer of gate electrode both sides.Wherein, Semiconductor substrate can be silicon substrate, can doped p type or N-shaped alloy in Semiconductor substrate.In the execution mode of the application, Semiconductor substrate is N-shaped doped semiconductor, and alloy is P, As or Sb, and usually, the dopant of V race (i.e. N-type) all can be applied in the application.Dielectric layer covers a part for the surface of Semiconductor substrate and the sidewall of fin, and medium herein can form shallow channel isolation area (shallow trench isolation; STI), its material can be silica, silicon nitride, advanced low-k materials or its combination, and advanced low-k materials can be the silica, carbonado, xerogel, aeroge etc. of fluorinated silica glass, carbon doping.The formation of this place's dielectric layer can adopt the technique such as chemical vapour deposition (CVD), high density plasma CVD to be formed.Source-drain area on fin normally adopts the method for ion implantation to be formed, in a kind of execution mode of the application, using boron fluoride as injectant, the angle injected can be 0 ~ 15 degree, the dosage injected can be 2E14 ~ 3E15/cm3, Implantation Energy can be 1.0KeV ~ 5.0KeV, will repeat no more for more routine techniques details.
Perform step S102, carry out etching at the source-drain area of fin and form source-drain area groove.
Fig. 5 shows the cross-sectional view (the A-A direction along in Fig. 1) forming source-drain area groove in the fin source-drain area etching being formed with grid structure according to the application's execution mode.As shown in Figure 5, grid structure, across on fin 14, covers top and the sidewall of fin 14, and grid structure comprises gate electrode 12 and is positioned at the gate electrode spacer 13 of gate electrode both sides.In the execution mode of the application, source-drain area groove adopts the method for dry etching to be formed at fin 14 source-drain area.Wherein, etching gas can be HBr/Cl
2/ O
2/ He, air pressure is 1mT to 1000mT, and power is 50W to 1000W, and bias-voltage is the air velocity of 100V to 500V, HBr is 10sccm to 500sccm, Cl
2air velocity be 0sccm to 500sccm, O
2air velocity be the air velocity of 0sccm to 100sccm, He be 0sccm to 1000sccm.Because said method is conventionally known to one of skill in the art, it is conventional or be out of shape all in the scope of the application's protection, does not repeat them here.After completing above-mentioned steps, namely obtain structure as shown in Figure 5, be formed with source-drain area groove at the fin source-drain area of grid structure both sides.Those skilled in the art can need the degree of depth of etching and the length on fin horizontal-extending direction according to the design size adjustment source-drain area groove of fin field effect pipe, in the present embodiment, the degree of depth of source-drain area groove is 45 ~ 55nm, is preferably 48-52nm, is more preferably 50nm; The length of source-drain area groove on fin horizontal-extending direction is 20 ~ 30nm, is preferably 22-26nm, is more preferably 25nm.
Perform step S103, in source-drain area groove, deposit the first epitaxial loayer, and this first epitaxial loayer is the silicon layer that carbon doping concentration is less than 4W/O.
Fig. 6 shows the cross-sectional view form the first epitaxial loayer in the source-drain area groove of Fig. 5 after.In the execution mode of the application, in source-drain area groove, form the first epitaxial loayer 23, first epitaxial loayer 23 for carbon doping concentration and be less than the silicon of 4W/O.This first epitaxial loayer 23 can be formed by chemical vapour deposition technique, the content of carbon in the first epitaxial loayer formed by the dividing potential drop adjustment adjusting silicon-containing gas and carbonaceous gas; Also first can form silicon layer by chemical vapour deposition technique, then inject carbon in a layer of silicon by the mode of ion implantation and formed.The thinner thickness of this first epitaxial loayer, such as 0nm is less than 5nm, preferably, 3nm.In the forming process of the first epitaxial loayer 23, etching gas can be added in process gas (silicon-containing gas and carbonaceous gas), such as HCl gas, to make the first epitaxial loayer 23 optionally grow on fin 14, but can not grow on grid structure and dielectric layer 11.Perform step 4, the first epitaxial loayer 23 deposits the silicon layer that the second epitaxial loayer 24, second epitaxial loayer 24 is carbon doping concentration 5 ~ 20W/O
Fig. 7 shows the cross-sectional view after the first epitaxial loayer in figure 6 being formed the second epitaxial loayer.In the execution mode of the application, the first epitaxial loayer 23 forms the silicon that the second epitaxial loayer 24, second epitaxial loayer is carbon doping concentration 5 ~ 20W/O.This second epitaxial loayer 24 can be formed by chemical vapour deposition technique, the content of carbon in the first epitaxial loayer formed by the dividing potential drop adjustment adjusting silicon-containing gas and carbonaceous gas; Also first can form silicon layer by chemical vapour deposition technique, then inject carbon in a layer of silicon by the mode of ion implantation and formed.The thickness of this second epitaxial loayer is thicker, such as 45 ~ 55nm, preferably, and 50nm.In the forming process of the second epitaxial loayer 24, etching gas can be added in process gas (silicon-containing gas and carbonaceous gas), such as HCl gas, to make the second epitaxial loayer 24 optionally grow on the first epitaxial loayer 23, but can not grow on grid structure and dielectric layer 11.
Epitaxial loayer (the first epitaxial loayer 23 and the second epitaxial loayer 24, silicon carbon layer) in the application can be prepared in existing process cavity according to following technique:
Performing the preference temperature of epitaxial growth technology depends on for depositing siliceous and particular precursor that is material with carbon element, and under the temperature of process cavity can remain on the temperature of 250 DEG C ~ 1000 DEG C, concrete temperature those skilled in the art can determine according to actual conditions.Under process cavity can be maintained at about the pressure of 0.1 ~ 200Torr usually, this pressure Possible waves during deposition step, but generally constant.
Deposition gases at least comprises silicon source, carrier gas and carbon source.In alternate embodiments, deposition gases can comprise at least one etching agent, such as hydrogen chloride or chlorine.
Usually with in the scope of about 5 ~ 500sccm, such as, the speed of 10 ~ 300sccm, and the speed of 50 ~ 200sccm especially, be more particularly provided to silicon source process cavity from the speed of 100sccm.In the deposition gases depositing siliceous and carbon, useful silicon source includes, but not limited to silane, halogenated silane and organosilan.Silane comprises monosilane and has empirical formula Si
xh
(2x+2)higher silanes, such as disilane, trisilalkane and tetrasilane etc.Halogenated silane comprises and has empirical formula X '
ysi
xh
(2x+2-y), wherein, X '=F, Cl, Br or I, such as disilicone hexachloride, tetrachloro silicane, dichlorosilane and trichlorosilane.Organosilan comprises and has empirical formula R
ysi
xh
(2x+2-y)compound, wherein, R=methyl, ethyl, propyl group or butyl, such as methyl-monosilane, dimethylsilane, ethylsilane, tetramethyidisilanoethane, dimethyl disilane and hexamethyldisilane.
Silicon source is transported in process cavity usually together with carrier gas, and carrier gas has the flow velocity of about 1 ~ 100slm, such as, from the flow velocity of 5 ~ 75slm, and the flow velocity of 10 ~ 50slm especially, the flow velocity of such as 25slm.Carrier gas can comprise nitrogen, hydrogen, argon, helium and combination thereof.Inert carrier gas is preferably and comprises nitrogen, argon, helium and combination thereof.Carrier gas can be selected based on presoma used during epitaxy technique and/or technological temperature.
Process cavity is provided to form the carbon source of such as silicon carbon material together with carrier gas with silicon source, usually with in the scope of 0.1 ~ 20sccm, such as, the speed of 0.5 ~ 10sccm, and the speed of 1 ~ 5sccm especially, more particularly silicon source is provided in process cavity by the speed of 2sccm.Include, but are not limited to for depositing siliceous and carbon source that is carbon compound, organosilan, alkyl, alkene, and the alkynes of ethyl, propyl group and butyl.This carbon source comprises methyl-monosilane, dimethylsilane, ethylsilane, methane, ethene, acetylene, propane, propylene, butine etc.
Obtain a kind of fin field effect pipe by above-mentioned steps S101 to S104, the epitaxial loayer on the fin of fin field effect pipe has nearly ellipse, and profile camber line is curve, and this epitaxial layers is different from the epitaxial loayer of existing nearly rectangle completely.The fin field effect pipe cross-sectional view that the application provides is specifically described below in conjunction with Fig. 8.
Fig. 8 shows according to the structure vertical of Fig. 7 in the cross-sectional view in A-A direction.As shown in Figure 8, be formed with outstanding fin 14 over the semiconductor substrate 10, dielectric layer 11 covers a part of sidewall of Semiconductor substrate 10 surface and fin 14.The second epitaxial loayer 24 that the silicon of the first epitaxial loayer 23 that the silicon that epitaxial loayer is less than 4W/O by carbon doping concentration is formed and carbon doping concentration 5 ~ 20W/O is formed forms, owing to fin being provided with source-drain area groove, and the carbon content concentration of the first epitaxial loayer directly contacted with this source-drain area groove is lower, and the second epitaxial loayer 24 carbon content concentration be arranged on the first epitaxial loayer 23 is higher, such epitaxial loayer would not form multiple in the process of growth, as shown in Figure 8, also rectangular profile would not be formed, its appearance profile is similar to half elliptic, the distance of epitaxial loayer cross growth is shorter, adjacent epitaxial loayer would not grow together, thus the technical problem that the spacing overcoming the epitaxial loayer that adjacent fin grows excessively is reduced.
Fig. 9 shows the changing trend diagram according to concentration of carbon in the first epitaxial loayer of the application's execution mode and the second epitaxial loayer.
As shown in Figure 9, in first epitaxial loayer and the second epitaxial loayer, the content of carbon evenly increases along with the increase from Semiconductor substrate distance, certainly, this should be less than 4W/O at the carbon doping concentration of guarantee first epitaxial loayer, carries out under the prerequisite of the carbon doping concentration 5 ~ 20W/O of the second epitaxial loayer.In the present embodiment, first epitaxial loayer and the second epitaxial loayer are equivalent to one-body molded, there is no obvious border, the gross thickness of the first epitaxial loayer and the second epitaxial loayer is at about 55nm, and when deposit thickness is below 5nm, carbon doping concentration is less than 5W/O, along with the increase of epitaxial deposition thickness, the doping content of carbon evenly increases, until increase keeps this doping content constant, until the second epitaxial deposition is complete after referring to 20W/O.
Figure 10 shows the changing trend diagram according to concentration of carbon in the first epitaxial loayer of another execution mode of the application and the second epitaxial loayer.
As shown in Figure 10, in the first epitaxial loayer, carbon content is uniform, and in the second epitaxial loayer, the content of carbon evenly increases along with the increase from Semiconductor substrate distance.Certainly, this also should be less than 4W/O at the carbon doping concentration of guarantee first epitaxial loayer, carries out under the prerequisite of the carbon doping concentration 5 ~ 20W/O of the second epitaxial loayer.In the present embodiment, the thickness of the first epitaxial loayer is 4nm, carbon doping concentration in silicon is 3W/O, the thickness of the second epitaxial loayer is 55nm, carbon doping concentration in silicon is from 5W/O, and along with the increase of epitaxial deposition thickness, the doping content of carbon evenly increases, until increase keeps this doping content constant, until the second epitaxial deposition is complete after referring to 20W/O.
Certainly, in such cases, also have other trickle mode of texturing, the carbon doping concentration as the first epitaxial loayer starts to remain on 3W/O, and then along with the deposition of the first epitaxial loayer and the second epitaxial loayer, in silicon, carbon doping concentration evenly increases.Certainly, this also should be less than 4W/O at the carbon doping concentration of guarantee first epitaxial loayer, carries out under the prerequisite of the carbon doping concentration 5 ~ 20W/O of the second epitaxial loayer.
Figure 11 shows the changing trend diagram according to concentration of carbon in the application again the first epitaxial loayer of an execution mode and the second epitaxial loayer.
As shown in figure 11, the first epitaxial loayer and the second epitaxial loayer are formed by chemical vapour deposition technique, and the content of carbon in the first epitaxial loayer formed by the dividing potential drop adjustment of adjustment silicon-containing gas and carbonaceous gas and the second epitaxial loayer.Certainly, this also should be less than 4W/O at the carbon doping concentration of guarantee first epitaxial loayer, carries out under the prerequisite of the carbon doping concentration 5 ~ 20W/O of the second epitaxial loayer.In the present embodiment, the thickness of the first epitaxial loayer is 3nm, and the carbon doping concentration in silicon is 3W/O, and the thickness of the second epitaxial loayer is 50nm, and the carbon doping concentration in silicon is 20W/O, and even concentration is constant.
To sum up, the technical scheme of application the application, the first epitaxial loayer that the silicon that epitaxial loayer is less than 4W/O by carbon doping concentration is formed and carbon doping concentration are that the second epitaxial loayer that the silicon of 5 ~ 20W/O is formed forms, owing to fin being provided with source-drain area groove, and the carbon content concentration of the first epitaxial loayer directly contacted with this source-drain area groove is lower, and the second epitaxial loayer carbon content concentration arranged on the first epitaxial layer is higher, such epitaxial loayer would not form multiple in the process of growth, also the profile of rectangle would not be formed, the distance that epitaxial loayer laterally derives is shorter, adjacent epitaxial loayer would not stick together, thus overcome in prior art to grow and can produce the profile of rectangle (or approximate rectangular) and the spacing of the epitaxial loayer that the adjacent fin caused grows crosses the technical problem of reduction at the outer surface of fin upper epitaxial layer.
The foregoing is only the preferred implementation of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (16)
1. a manufacture method for fin field effect pipe, is characterized in that, described manufacture method comprises:
S101, forms fin on a semiconductor substrate, and forms grid structure on described fin;
S102, described fin forms source-drain area, and carries out etching formation source-drain area groove to described source-drain area;
S103, deposits the first epitaxial loayer and the second epitaxial loayer successively in described source-drain area groove, and wherein, described first epitaxial loayer is that to be less than described second epitaxial loayer be carbon doping concentration to carbon doping concentration.
2. manufacture method according to claim 1, is characterized in that, described first epitaxial loayer is the silicon layer that carbon doping concentration is less than 4W/O; Described second epitaxial loayer is the silicon layer of carbon doping concentration 5 ~ 20W/O.
3. manufacture method according to claim 1, is characterized in that, the thickness of described first epitaxial loayer is greater than 0nm and is less than 5nm.
4. manufacture method according to claim 1, is characterized in that, the thickness of described second epitaxial loayer is 45 ~ 55nm.
5. manufacture method according to claim 1, is characterized in that,
In described first epitaxial loayer and described second epitaxial loayer, the content of carbon evenly increases along with the increase from described Semiconductor substrate distance; Or
In described first epitaxial loayer, carbon content is uniform, and in described second epitaxial loayer, the content of carbon evenly increases along with the increase from described Semiconductor substrate distance; Or
In described first epitaxial loayer and described second epitaxial loayer, carbon content is uniform respectively.
6. manufacture method according to claim 1, it is characterized in that, described first epitaxial loayer and described second epitaxial loayer are formed by chemical vapour deposition technique, and the content of carbon in described first epitaxial loayer formed by the dividing potential drop adjustment of adjustment silicon-containing gas and carbonaceous gas and described second epitaxial loayer.
7. manufacture method according to claim 1, is characterized in that, first described first epitaxial loayer and described second epitaxial loayer form silicon layer by chemical vapour deposition technique, then in described silicon layer, injects carbon by the mode of ion implantation and is formed.
8. manufacture method according to claim 1, is characterized in that, the degree of depth of described source-drain area groove is 45 ~ 55nm.
9. manufacture method according to claim 1, is characterized in that, the length of described source-drain area groove on fin horizontal-extending direction is 20 ~ 30nm.
10. a fin field effect pipe, the epitaxial loayer comprising formation dielectric layer on a semiconductor substrate and fin, grid structure and be arranged on described fin, it is characterized in that, described epitaxial loayer comprises:
First epitaxial loayer, is arranged in the source-drain area groove of fin,
Second epitaxial loayer, is arranged on described first epitaxial loayer,
Wherein, described first epitaxial loayer is that to be less than described second epitaxial loayer be carbon doping concentration to carbon doping concentration.
11. fin field effect pipes according to claim 10, is characterized in that, described first epitaxial loayer is the silicon layer that carbon doping concentration is less than 4W/O; Described second epitaxial loayer is the silicon layer of carbon doping concentration 5 ~ 20W/O.
12. fin field effect pipes according to claim 10, is characterized in that, the thickness of described first epitaxial loayer is greater than 0nm and is less than 5nm.
13. fin field effect pipes according to claim 10, is characterized in that, the thickness of described second epitaxial loayer is 45 ~ 55nm.
14. fin field effect pipes according to claim 10, is characterized in that,
In described first epitaxial loayer and described second epitaxial loayer, the content of carbon evenly increases along with the increase from described Semiconductor substrate distance; Or
In described first epitaxial loayer, carbon content is uniform, and in described second epitaxial loayer, the content of carbon evenly increases along with the increase from described Semiconductor substrate distance;
In described first epitaxial loayer and described second epitaxial loayer, carbon content is uniform respectively.
15. fin field effect pipes according to claim 10, is characterized in that, the degree of depth of described source-drain area groove is 45 ~ 55nm.
16. fin field effect pipes according to claim 10, is characterized in that, the length of described source-drain area groove on fin horizontal-extending direction is 20 ~ 30nm.
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| CN107579116A (en) * | 2016-07-05 | 2018-01-12 | 瑞昱半导体股份有限公司 | Fin field-effect transistor and its manufacture method |
| CN108807536A (en) * | 2017-04-28 | 2018-11-13 | 台湾积体电路制造股份有限公司 | Manufacture the method and semiconductor device of fin field-effect transistor |
| CN112582268A (en) * | 2019-09-30 | 2021-03-30 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and forming method |
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| US20110233679A1 (en) * | 2010-03-25 | 2011-09-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit including finfets and methods for forming the same |
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