CN104576388B - Fin field effect pipe and preparation method thereof - Google Patents
Fin field effect pipe and preparation method thereof Download PDFInfo
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- CN104576388B CN104576388B CN201310479778.0A CN201310479778A CN104576388B CN 104576388 B CN104576388 B CN 104576388B CN 201310479778 A CN201310479778 A CN 201310479778A CN 104576388 B CN104576388 B CN 104576388B
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- 230000005669 field effect Effects 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 230000009467 reduction Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- MJBPUQUGJNAPAZ-UHFFFAOYSA-N Butine Natural products O1C2=CC(O)=CC=C2C(=O)CC1C1=CC=C(O)C(O)=C1 MJBPUQUGJNAPAZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 206010051986 Pneumatosis Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- UCMVNBCLTOOHMN-UHFFFAOYSA-N dimethyl(silyl)silane Chemical compound C[SiH](C)[SiH3] UCMVNBCLTOOHMN-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
This application discloses a kind of fin field effect pipes and preparation method thereof.Wherein, fin field effect pipe includes dielectric layer and fin, the gate structure and epitaxial layer being arranged on fin to be formed on a semiconductor substrate, epitaxial layer includes the first epitaxial layer and the second epitaxial layer being sequentially depositing in the source-drain area groove of fin, wherein, it less than the second epitaxial layer is carbon doping concentration that the first epitaxial layer, which is carbon doping concentration,.Epitaxial layer will not form the profile of rectangle during growth, and distance is shorter derived from epitaxial layer transverse direction, and adjacent epitaxial layer would not stick together, and overcome and be grown in the outer surface of fin upper epitaxial layer in the prior art and will produce rectangle（Or it is approximate rectangular）Profile and caused by the technical issues of distance crosses reduction between the epitaxial layer that is grown in adjacent fin.
Description
Technical field
This application involves semiconductor fabrications, in particular to a kind of fin field effect pipe and preparation method thereof.
Background technology
With the development of semiconductor technology, the performance of semiconductor devices steadily improves.From structure, semiconductor devices
Also multiple-grid semiconductor devices is developed by single gate semiconductor device.Currently, fin formula field effect transistor（Fin field-effect
transistors；Fin FETs）Representative as multiple-grid semiconductor devices is widely used.
Fig. 1 shows the dimensional structure diagram of existing fin field effect pipe.As shown in Figure 1, existing fin field effect pipe
Including semiconductor substrate 10 ', fin 14 ' outstanding is formed in semiconductor substrate 10 ', dielectric layer 11 ' covers semiconductor lining
A part of side wall of 10 ' surface of bottom and fin 14 '；For gate structure across on fin 14 ', which includes gate electrode
12 ' and positioned at 12 ' both sides of gate electrode gate electrode spacer 13 '.
It is similar to planar transistor, it can be formed with drain region in the source area on the fin 14 ' of fin formula field effect transistor
Source electrode and drain electrode.However, the fin due to fin formula field effect transistor is usually very narrow, current focusing can occur（current
crowding）Phenomenon.In addition, it is highly difficult to be placed into contact with plug in relatively narrow fin sources/drain electrode.In order to solve fin body
The relatively narrow problem of product, the prior art forms epitaxial semiconductor layer using epitaxy technique on fin, to increase fin
Volume.
However, increase the production method of fin volume there are some disadvantages using epitaxy technique, below in conjunction with Fig. 2 into one
Step illustrate existing manufacture craft there are the shortcomings that.Structure shown in Fig. 2 is the fin field after grown epitaxial layer on the basis of Fig. 1
Effect transistor structure schematic diagram is structural schematic diagrams of the Fig. 1 perpendicular to the directions A-A.Wherein, epitaxial layer 22 ' is grown in fin
On 14 ' source-drain area.Compared with traditional planar transistor, the source-drain area of fin formula field effect transistor is the one of fin 14 '
Part, volume is not by shallow channel isolation area（shallow trench isolation；STI）Limitation, can be according to semiconductor
Device design needs to adjust the volume of source-drain area.But since epitaxial layer 22 ' is typically to be formed by pure silicon, exist in this way（111）Crystallization
Growth rate on face is less than other crystal planes, and epitaxial layer 22 ' can be laterally extended, and form multiple faces 8 '（facet）, this can be caused
Lateral distance between the epitaxial layer grown on adjacent fin exceedingly reduces.Furthermore as shown in figure 3, due to adjacent
Lateral distance between the epitaxial layer grown on fin exceedingly reduces, the epitaxial layer 22 ' grown on adjacent fin 14 '
Fusion will also result in undesirable gap 30 ' and generate.
Invention content
The application is intended to provide a kind of fin field effect pipe and preparation method thereof, to solve to be grown in fin in the prior art
The outer surface of upper epitaxial layer will produce rectangle（Or it is approximate rectangular）Profile and caused by the epitaxial layer that is grown in adjacent fin
Between distance the technical issues of crossing reduction.
The production method of fin field effect pipe provided by the present application includes：S101 forms fin on a semiconductor substrate, and
Gate structure is formed on fin；S102 forms source-drain area on fin, and performs etching to form source-drain area ditch to source-drain area
Slot；S103 is sequentially depositing the first epitaxial layer and the second epitaxial layer in source-drain area groove, wherein the first epitaxial layer adulterates for carbon
It is carbon doping concentration that concentration, which is less than the second epitaxial layer,.
Fin field effect pipe provided by the present application, including form dielectric layer on a semiconductor substrate and fin, grid knot
Structure and the epitaxial layer being arranged on fin, epitaxial layer include the first epitaxial layer for being sequentially depositing in the source-drain area groove of fin and
Second epitaxial layer, wherein it less than the second epitaxial layer is carbon doping concentration that the first epitaxial layer, which is carbon doping concentration,.
Using the technical solution of the application, epitaxial layer is made of the first epitaxial layer and the second epitaxial layer, wherein the first extension
It less than the second epitaxial layer is carbon doping concentration that layer, which is carbon doping concentration,.Due to being provided with source-drain area groove on fin, and with the source
The carbon content concentration for the first epitaxial layer that drain region groove is in direct contact is relatively low, and the second epitaxial layer on the first epitaxial layer is arranged
Carbon content concentration is higher, and such epitaxial layer would not form multiple faces during growth, would not also form the wheel of rectangle
Exterior feature, distance derived from epitaxial layer transverse direction is shorter, and adjacent epitaxial layer would not stick together, to overcome in the prior art
The outer surface for being grown in fin upper epitaxial layer will produce rectangle（Or it is approximate rectangular）Profile and caused by give birth in adjacent fin
The technical issues of distance crosses reduction between long epitaxial layer.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not constitute the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 shows the sectional perspective structural schematic diagram of existing fin field effect pipe；
Fig. 2 shows the fin field effect pipe cross-sectional views perpendicular to the directions Figure 1A-A；
Fig. 3 shows fin field effect pipe cross-sectional view of the adjacent fin perpendicular to the directions A-A；
Fig. 4 shows the flow diagram for the fin field effect pipe production method that the application embodiment is provided；
Fig. 5 is shown to be etched to form the cross-sectional view of source-drain area groove in fin source-drain area（A-A in Fig. 1
Direction）；
Fig. 6 shows the cross-sectional view after forming the first epitaxial layer in the source-drain area groove of Fig. 5；
Fig. 7, which is shown, forms the cross-sectional view after the second epitaxial layer on the first epitaxial layer in figure 6；
Fig. 8 shows the structure vertical according to Fig. 7 in the cross-sectional view in the directions A-A；
Fig. 9 shows the first epitaxial layer and second in the fin field effect pipe epitaxial layer that the application specific implementation mode provides
The trend chart of concentration of carbon in epitaxial layer；
Figure 10 shows the first epitaxial layer in the fin field effect pipe epitaxial layer that another specific implementation mode of the application provides
With the trend chart of concentration of carbon in the second epitaxial layer；And
Figure 11 shows the first epitaxial layer in the fin field effect pipe epitaxial layer that the application still another embodiment provides
With the trend chart of concentration of carbon in the second epitaxial layer.
Specific implementation mode
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the application can
To be combined with each other.The application is described in detail below with reference to the accompanying drawings and in conjunction with embodiment.
For ease of description, herein can with use space relative terms, as " ... on ", " in ... top ",
" above " etc., it is closed with the spatial position of other devices or feature for describing such as a device shown in the figure or feature
System.It should be understood that spatially relative term be intended to comprising other than orientation of the device described in figure using or
Different direction in operation.For example, if the device in attached drawing is squeezed, be described as " other devices or construction above " or
It will be positioned as after the device of " on other devices or construction " " below other devices or construction " or " in other devices
Or under construction ".Thus, exemplary term may include " in ... top " and two kinds of " in ... lower section " " in ... top "
Orientation.The device can also the positioning of other different modes（It is rotated by 90 ° or is in other orientation）, and to used herein above
Respective explanations are made in the opposite description in space.
Can be seen that existing fin field effect pipe from the introduction of background technology, there are the epitaxial layers grown in adjacent fin
Between lateral distance the technical issues of excessively reducing should so present applicant proposes a kind of fin field effect pipe production method
The flow diagram of production method is as shown in Figure 4.
The production method of the fin field effect pipe, including S101 form fin, and the shape on fin on a semiconductor substrate
At gate structure；S102 forms source-drain area on fin, and performs etching to form source-drain area groove to source-drain area；S103, in source
The first epitaxial layer and the second epitaxial layer are sequentially depositing in the groove of drain region, wherein the first epitaxial layer is that carbon doping concentration is less than second
Epitaxial layer is carbon doping concentration.
Using the technical solution of the application, epitaxial layer is different from the setting of existing epitaxial layer, by the first epitaxial layer and second
Epitaxial layer forms, and it less than the second epitaxial layer is carbon doping concentration that the first epitaxial layer, which is carbon doping concentration,.Due to being provided on fin
Source-drain area groove, such epitaxial layer can effectively stress on source-drain area groove, improve the performance of fin field effect pipe；Due to
The carbon content concentration for the first epitaxial layer that source-drain area groove is in direct contact is relatively low, and the second extension on the first epitaxial layer is arranged
Layer carbon content concentration is higher, and such epitaxial layer during growth, due to the presence of carbon, destroys the original rule of silicon
Crystalline structure would not form multiple faces, would not also form rectangular profile, the distance of epitaxial layer cross growth is shorter, phase
Adjacent epitaxial layer would not stick together, to overcome the rectangle of existing epitaxial layer（Or it is approximate rectangular）Profile and caused by phase
The technical issues of distance is excessively reduced between the epitaxial layer grown on adjacent fin.In addition, due to the carbon content of the first epitaxial layer
Concentration is relatively low, and it is higher to be arranged the second epitaxial layer carbon content concentration on the first epitaxial layer, be also beneficial in this way epitaxial layer with
The good combination of fin.
Fin field effect pipe production method provided by the present application is further illustrated below in conjunction with attached drawing 5-7.
Step S101 is executed, forms fin on a semiconductor substrate, and form dielectric layer and gate structure on substrate.
Structure as shown in Figure 1 may be used in the fin field effect pipe stereochemical structure of the application.On a semiconductor substrate
It is formed with fin outstanding, fin can be by obtaining, it is of course also possible to by substrate after semiconductor substrate etching
Top is epitaxially-formed, and dielectric layer is covered in a part for the surface of semiconductor substrate and the side wall of fin；Gate structure
Across the top and side wall on fin, covering fin, gate structure includes gate electrode and the gate electrode positioned at gate electrode both sides
Clearance wall.Wherein, semiconductor substrate can be silicon substrate, can be with doped p type or n-type dopant in semiconductor substrate.In this Shen
In embodiment please, semiconductor substrate be N-shaped doped semiconductor, dopant P, As or Sb, in general, for group V（That is N
Type）Dopant can be applied in the application.Dielectric layer is covered in the surface of semiconductor substrate and the side wall of fin
A part, medium herein can form shallow channel isolation area（shallow trench isolation；STI）, material can
Think silica, silicon nitride, advanced low-k materials, or combinations thereof, advanced low-k materials can be that fluorinated silica glass, carbon be mixed
Miscellaneous silica, carbonado, xerogel, aeroge etc..Chemical vapor deposition, highly dense may be used in formation of dielectric layer at this
The techniques such as degree plasma activated chemical vapour deposition are formed.Source-drain area on fin is typically to be formed using the method for ion implanting,
In a kind of embodiment of the application, using boron fluoride as injectant, the angle of injection can be 0~15 degree, the agent of injection
Amount can be 2E14~3E15/cm3, and Implantation Energy can be 1.0KeV~5.0KeV, will not for more routine techniques details
It repeats again.
Step S102 is executed, performs etching to form source-drain area groove in the source-drain area of fin.
Fig. 5 is shown to be etched to form source and drain according to the application embodiment in the fin source-drain area for being formed with gate structure
The cross-sectional view of area's groove（The directions A-A in Fig. 1）.As shown in figure 5, gate structure is covered across on fin 14
The top of lid fin 14 and side wall, gate structure include gate electrode 12 and the gate electrode spacer 13 positioned at gate electrode both sides.
In presently filed embodiment, source-drain area groove is formed in 14 source-drain area of fin using the method for dry etching.Wherein, it carves
It can be HBr/Cl to lose gas2/O2/ He, air pressure be 1mT to 1000mT, power be 50W to 1000W, bias-voltage be 100V extremely
The air velocity of 500V, HBr are 10sccm to 500sccm, Cl2Air velocity be 0sccm to 500sccm, O2Air velocity
Air velocity for 0sccm to 100sccm, He is 0sccm to 1000sccm.Because the above method is by art technology
Well known to personnel, commonly uses or deform in the range of the application protects, details are not described herein.After completing above-mentioned steps, i.e.,
Structure as shown in Figure 5 is obtained, the fin source-drain area in gate structure both sides is formed with source-drain area groove.Those skilled in the art
Source-drain area groove can be adjusted according to the design size of fin field effect pipe needs the depth etched and in fin horizontal extension side
Upward length, in the present embodiment, the depth of source-drain area groove is 45~55nm, preferably 48-52nm, more preferably
50nm；Length of the source-drain area groove on fin horizontal extension direction be 20~30nm, preferably 22-26nm, more preferably
25nm。
Step S103 is executed, the first epitaxial layer is deposited in source-drain area groove, and first epitaxial layer is carbon doping concentration
Silicon layer less than 4W/O.
Fig. 6 shows the cross-sectional view after forming the first epitaxial layer in the source-drain area groove of Fig. 5.In the application
Embodiment in, form the first epitaxial layer 23 in source-drain area groove, the first epitaxial layer 23 is that carbon doping concentration is less than 4W/O
Silicon.First epitaxial layer 23 can be formed by chemical vapour deposition technique, by adjusting point of silicon-containing gas and carbonaceous gas
The content of carbon in the first epitaxial layer that pressure adjustment is formed；Chemical vapour deposition technique can also be first passed through and form silicon layer, then passed through
The mode of ion implanting is injected carbon and is formed in a layer of silicon.The thinner thickness of this first epitaxial layer, such as 0nm are less than 5nm, preferably
Ground, 3nm.It, can be in process gas in the forming process of the first epitaxial layer 23（Silicon-containing gas and carbonaceous gas）Middle addition etching
Gas, such as HCl gases, so that the first epitaxial layer 23 is selectively grown on fin 14, but not in gate structure and Jie
It is grown on matter layer 11.Step 4 is executed, the second epitaxial layer 24 is deposited on the first epitaxial layer 23, the second epitaxial layer 24 adulterates for carbon
The silicon layer of 5~20W/O of concentration
Fig. 7, which is shown, forms the cross-sectional view after the second epitaxial layer on the first epitaxial layer in figure 6.In this Shen
In embodiment please, the second epitaxial layer 24 is formed on the first epitaxial layer 23, the second epitaxial layer is 5~20W/ of carbon doping concentration
The silicon of O.Second epitaxial layer 24 can be formed by chemical vapour deposition technique, by adjusting point of silicon-containing gas and carbonaceous gas
The content of carbon in the first epitaxial layer that pressure adjustment is formed；Chemical vapour deposition technique can also be first passed through and form silicon layer, then passed through
The mode of ion implanting is injected carbon and is formed in a layer of silicon.The thickness of this second epitaxial layer is thicker, such as 45~55nm, it is preferable that
50nm.It, can be in process gas in the forming process of the second epitaxial layer 24（Silicon-containing gas and carbonaceous gas）Middle addition etches gas
Body, such as HCl gases, so that the second epitaxial layer 24 is selectively grown on the first epitaxial layer 23, but not in gate structure
And it is grown on dielectric layer 11.
Epitaxial layer in the application（First epitaxial layer 23 and the second epitaxial layer 24, silicon carbon layer）It can be according to following technique existing
It is prepared in some process cavities：
The preference temperature for executing epitaxial growth technology is depended on for depositing siliceous and carbon material particular precursor, technique
At a temperature of the temperature of chamber is positively retained at 250 DEG C~1000 DEG C, specific temperature those skilled in the art can be according to actual conditions
It determines.Process cavity is usually positively retained under the pressure of about 0.1~200Torr, pressure Possible waves during deposition step, but
It is general constant.
Deposition gases include at least silicon source, carrier gas and carbon source.In alternate embodiments, deposition gases may include at least one
Kind etching agent, such as hydrogen chloride or chlorine.
Usually in the range of about 5~500sccm, for example, the speed of 10~300sccm, and particularly 50~
The speed of 200sccm more particularly provides silicon source into process cavity from the speed of 100sccm.It is siliceous and carbon heavy depositing
Useful silicon source includes, but are not limited to silane, halogenated silane and organosilan in pneumatosis body.Silane includes monosilane and has
Empirical formula SixH（2x+2）Higher silanes, disilane, trisilalkane and tetrasilane etc..Halogenated silane includes having empirical formula
X’ySixH（2x+2-y）, wherein X '=F, Cl, Br or I, such as disilicone hexachloride, tetrachloro silicane, dichlorosilane and trichlorosilane.Have
Machine silane includes having empirical formula RySixH（2x+2-y）Compound, wherein R=methyl, ethyl, propyl or butyl, such as methyl
Silane, dimethylsilane, ethylsilane, tetramethyidisilanoethane, dimethyl disilane and hexamethyldisilane.
Silicon source is usually transported to together with carrier gas in process cavity, and carrier gas has a flow velocity of about 1~100slm, such as from 5~
The flow velocity of 75slm, and the particularly flow velocity of 10~50slm, for example, 25slm flow velocity.Carrier gas may include nitrogen, hydrogen, argon,
Helium and combinations thereof.Inert carrier gas is preferably and includes nitrogen, argon, helium and combinations thereof.Carrier gas can be based on during epitaxy technique
Presoma and/or technological temperature used selects.
With provided to process cavity together with silicon source and carrier gas to form the carbon source of such as silicon carbon material, usually with 0.1~
In the range of 20sccm, for example, the speed of 0.5~10sccm, and the particularly speed of 1~5sccm, more particularly 2sccm's
Speed provides silicon source in process cavity.Include, but are not limited to for depositing siliceous and carbon compound carbon source, organosilicon
The alkynes of alkane, alkyl, alkene and ethyl, propyl and butyl.The carbon source include methyl-monosilane, dimethylsilane, ethylsilane,
Methane, ethylene, acetylene, propane, propylene, butine etc..
S101 to S104 has obtained a kind of fin field effect pipe through the above steps, outer on the fin of fin field effect pipe
It is curve to prolong layer to have nearly ellipse, shape camber line, this epitaxial layers is totally different from the epitaxial layer of existing nearly rectangle.Below will
Fin field effect pipe cross-sectional view provided herein is specifically described in conjunction with Fig. 8.
Fig. 8 shows the structure vertical according to Fig. 7 in the cross-sectional view in the directions A-A.As shown in figure 8, partly leading
Fin 14 outstanding is formed in body substrate 10, dielectric layer 11 covers 10 surface of semiconductor substrate and a part of side of fin 14
Wall.The silicon shape for the first epitaxial layer 23 and 5~20W/O of carbon doping concentration that silicon of the epitaxial layer by carbon doping concentration less than 4W/O is formed
At the second epitaxial layer 24 composition, due to being provided with source-drain area groove on fin, and the be in direct contact with the source-drain area groove
The carbon content concentration of one epitaxial layer is relatively low, and the 24 carbon content concentration of the second epitaxial layer being arranged on the first epitaxial layer 23 is higher,
Epitaxial layer would not form multiple faces during growth in this way, as shown in figure 8, rectangular profile would not be also formed, outside
Shape profile is similar to half elliptic, and the distance of epitaxial layer cross growth is shorter, and adjacent epitaxial layer would not be grown together,
To overcome the technical issues of distance between the epitaxial layer grown in adjacent fin is excessively reduced.
Fig. 9 shows the variation tendency of concentration of carbon in the first epitaxial layer and the second epitaxial layer according to the application embodiment
Figure.
As shown in figure 9, the content of carbon is with the increase with a distance from semiconductor substrate in the first epitaxial layer and the second epitaxial layer
And uniformly increase, certainly, this should be less than 4W/O in the carbon doping concentration for ensureing the first epitaxial layer, and the carbon of the second epitaxial layer is mixed
It is carried out under the premise of miscellaneous 5~20W/O of concentration.In the present embodiment, the first epitaxial layer and the second epitaxial layer be equivalent to one at
Type, without apparent boundary, the overall thickness of the first epitaxial layer and the second epitaxial layer in 55nm or so, deposition thickness be 5nm with
When lower, carbon doping concentration is less than 5W/O, and with the increase of epitaxial deposition thickness, the doping concentration of carbon uniformly increases, Zhi Daozeng
Add keeps the doping concentration constant after referring to 20W/O, until the second epitaxial deposition finishes.
Figure 10 shows the change of concentration of carbon in the first epitaxial layer and the second epitaxial layer according to another embodiment of the application
Change tendency chart.
As shown in Figure 10, carbon content is uniform in the first epitaxial layer, and the content of carbon is with from partly leading in the second epitaxial layer
The increase of body substrate distance and uniformly increase.Certainly, this should also be is less than 4W/ in the carbon doping concentration for ensureing the first epitaxial layer
It is carried out under the premise of O, 5~20W/O of carbon doping concentration of the second epitaxial layer.In the present embodiment, the thickness of the first epitaxial layer
For 4nm, the carbon doping concentration in silicon is 3W/O, and the thickness of the second epitaxial layer is 55nm, the carbon doping concentration in silicon from 5W/O, with
The increase of epitaxial deposition thickness, the doping concentration of carbon uniformly increases, and the doping concentration is kept not after increase refers to 20W/O
Become, until the second epitaxial deposition finishes.
Certainly, in this case, the carbon doping concentration of also other subtle modes of texturing, such as the first epitaxial layer is opened
Beginning is maintained at 3W/O, and then as the deposition of the first epitaxial layer and the second epitaxial layer, carbon doping concentration uniformly increases in silicon.When
So, this should also be is less than 4W/O in the carbon doping concentration for ensureing the first epitaxial layer, and the carbon doping concentration 5 of the second epitaxial layer~
It is carried out under the premise of 20W/O.
Figure 11 shows the change of concentration of carbon in the first epitaxial layer and the second epitaxial layer according to the application a further embodiment
Change tendency chart.
As shown in figure 11, the first epitaxial layer and the second epitaxial layer are formed by chemical vapour deposition technique, and by adjusting containing
The content of carbon in the first epitaxial layer and the second epitaxial layer that the partial pressure adjustment of silicon gas and carbonaceous gas is formed.Certainly, this is also answered
This is to be less than 4W/O, the premise of 5~20W/O of carbon doping concentration of the second epitaxial layer in the carbon doping concentration for ensureing the first epitaxial layer
Lower progress.In the present embodiment, the thickness of the first epitaxial layer is 3nm, and the carbon doping concentration in silicon is 3W/O, the second epitaxial layer
Thickness be 50nm, the carbon doping concentration in silicon is 20W/O, and even concentration is constant.
To sum up, using the technical solution of the application, silicon of the epitaxial layer by carbon doping concentration less than 4W/O formed first outside
Prolong the second epitaxial layer composition that layer and carbon doping concentration are formed for the silicon of 5~20W/O, due to being provided with source-drain area ditch on fin
Slot, and the carbon content concentration for the first epitaxial layer being in direct contact with the source-drain area groove is relatively low, and be arranged on the first epitaxial layer
The second epitaxial layer carbon content concentration it is higher, such epitaxial layer would not form multiple faces during growth, also would not
The profile of rectangle is formed, distance is shorter derived from epitaxial layer transverse direction, and adjacent epitaxial layer would not stick together, to overcome
The outer surface for being grown in fin upper epitaxial layer in the prior art will produce rectangle（Or it is approximate rectangular）Profile and caused by phase
The technical issues of distance crosses reduction between the epitaxial layer grown on adjacent fin.
The foregoing is merely the preferred embodiments of the application, are not intended to limit this application, for this field
For technical staff, the application can have various modifications and variations.Within the spirit and principles of this application, any made by
Modification, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (16)
1. a kind of production method of fin field effect pipe, which is characterized in that the production method includes：
S101 forms fin, and forms gate structure on the fin on a semiconductor substrate；
S102 forms source-drain area on the fin, and performs etching to form source-drain area groove to the source-drain area；
S103 is sequentially depositing the first epitaxial layer and the second epitaxial layer in the source-drain area groove, wherein first epitaxial layer
Carbon doping concentration be less than second epitaxial layer carbon doping concentration；
First epitaxial deposition fills the source and drain in the bottom and side wall of the source-drain area groove, second epitaxial layer
Area's groove, and the fin is covered on the direction vertical with the fin.
2. manufacturing method according to claim 1, which is characterized in that first epitaxial layer is less than for carbon doping concentration
The silicon layer of 4W/O；Second epitaxial layer is the silicon layer of 5~20W/O of carbon doping concentration.
3. manufacturing method according to claim 1, which is characterized in that the thickness of first epitaxial layer is less than more than 0nm
5nm。
4. manufacturing method according to claim 1, which is characterized in that the thickness of second epitaxial layer is 45~55nm.
5. manufacturing method according to claim 1, which is characterized in that
In first epitaxial layer and second epitaxial layer content of carbon with the increase with a distance from the semiconductor substrate and
Uniformly increase；Or
Carbon content is uniform in first epitaxial layer, and the content of carbon is served as a contrast with from the semiconductor in second epitaxial layer
The increase of bottom distance and uniformly increase；Or
Carbon content is uniform respectively in first epitaxial layer and second epitaxial layer.
6. manufacturing method according to claim 1, which is characterized in that first epitaxial layer and second epitaxial layer are logical
First extension crossed chemical vapour deposition technique to be formed, and formed by adjusting the partial pressure adjustment of silicon-containing gas and carbonaceous gas
The content of carbon in layer and second epitaxial layer.
7. manufacturing method according to claim 1, which is characterized in that first epitaxial layer and second epitaxial layer are first
It first passes through chemical vapour deposition technique and forms silicon layer, then injecting carbon in the silicon layer by way of ion implanting forms.
8. manufacturing method according to claim 1, which is characterized in that the depth of the source-drain area groove is 45~55nm.
9. manufacturing method according to claim 1, which is characterized in that the source-drain area groove is in fin horizontal extension direction
On length be 20~30nm.
10. a kind of fin field effect pipe, including form dielectric layer on a semiconductor substrate and fin, gate structure and setting exists
Epitaxial layer on the fin, which is characterized in that the epitaxial layer includes：
The bottom and side wall in the source-drain area groove of fin is arranged in first epitaxial layer,
Second epitaxial layer is arranged on first epitaxial layer, and fills the source-drain area groove, vertical with the fin
Direction on cover the fin,
Wherein, the carbon doping concentration of first epitaxial layer is less than the carbon doping concentration of second epitaxial layer.
11. fin field effect pipe according to claim 10, which is characterized in that first epitaxial layer is carbon doping concentration
Silicon layer less than 4W/O；Second epitaxial layer is the silicon layer of 5~20W/O of carbon doping concentration.
12. fin field effect pipe according to claim 10, which is characterized in that the thickness of first epitaxial layer is more than
0nm is less than 5nm.
13. fin field effect pipe according to claim 10, which is characterized in that the thickness of second epitaxial layer be 45~
55nm。
14. fin field effect pipe according to claim 10, which is characterized in that
In first epitaxial layer and second epitaxial layer content of carbon with the increase with a distance from the semiconductor substrate and
Uniformly increase；Or
Carbon content is uniform in first epitaxial layer, and the content of carbon is served as a contrast with from the semiconductor in second epitaxial layer
The increase of bottom distance and uniformly increase；
Carbon content is uniform respectively in first epitaxial layer and second epitaxial layer.
15. fin field effect pipe according to claim 10, which is characterized in that the depth of the source-drain area groove be 45~
55nm。
16. fin field effect pipe according to claim 10, which is characterized in that the source-drain area groove prolongs in fin level
It is 20~30nm to stretch the length on direction.
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