CN104576310B - The preparation method for being aligned and turning on applied to semiconductor back surface - Google Patents
The preparation method for being aligned and turning on applied to semiconductor back surface Download PDFInfo
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- CN104576310B CN104576310B CN201310484907.5A CN201310484907A CN104576310B CN 104576310 B CN104576310 B CN 104576310B CN 201310484907 A CN201310484907 A CN 201310484907A CN 104576310 B CN104576310 B CN 104576310B
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Abstract
The invention discloses a kind of preparation method for being aligned and turning on applied to semiconductor back surface, including：1）Light-transmissive film layer is grown in the semiconductor back surface of offer；2）In semiconductor front photo-etching mark is made with photoetching process；3）With etch process etch step 2）In photo-etching mark, until with step 1）The light-transmissive film layer of growth is as stop-layer, and etch away sections light-transmissive film layer, the photo-etching mark formed after etching；4）In photo-etching mark after etching, material filling is carried out, back side photo-etching mark is formed with this；5）Semiconductor front is surface-treated, adhering wafers carrier；6）Local process processing is carried out using back process, conductive photo-etching mark is opened；7）Metal material is filled in conductive photo-etching mark, surface metal material is handled, it is ensured that do not have metal residual on light-transmissive film layer overleaf.The present invention can effectively improve the register effects in back process, prevents back pollution, can also produce safe conductive through hole.
Description
Technical field
The present invention relates to the semiconductor making method in a kind of microelectronic chip manufacture field, more particularly to a kind of application
The preparation method for being aligned and turning in semiconductor back surface.
Background technology
In the semiconductor fabrication of some special process, alignment issues are often a difficulty but have to improve
The problem of, it is even more so in semiconductor back surface technique.
The existing back side is all directly to make photo-etching mark with photoetching process in the front of semiconductor with photo-etching mark；Then
These photo-etching marks are directly cut through, or etching these photo-etching marks to certain depth, i.e., are not cut through；Secondly in these marks
Certain material is filled in note；Then semiconductor front is surface-treated, adhering wafers carrier, then carries out follow-up back side work
Skill.Wherein, the photo-etching mark cut through is used directly for the alignment of back process；Photo-etching mark is etched to certain depth, then
Need to first pass through other techniques, etching or the technique such as sawing semiconductor back surface is carried out thinning with exposure as described in photoetching mark
Note, is used further to the alignment of back process（Such as Figure 1A~Fig. 1 E）.
However, although existing process improves the alignment issues of back process, but some other problem is also created simultaneously：
Such as it is filled for the photo-etching mark cut through and goes back imperfection, the terminal part for also having these alignment marks is all directly exposed to
In air, easily cause the pollution of product.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of preparation method for being aligned and turning on applied to semiconductor back surface.
The problem of improving semiconductor back surface technique misregistration by this method, uses while being also used as conductive through hole.
In order to solve the above technical problems, the preparation method for being applied to semiconductor back surface alignment and conducting of the present invention, including
Step：
1）A light-transmissive film layer is grown in the semiconductor back surface of offer；
2）In semiconductor front photo-etching mark is made with photoetching process；
3）With etch process etch step 2）In photo-etching mark, until with step 1）The light-transmissive film layer of growth is used as stopping
Layer, and etch away sections light-transmissive film layer, the photo-etching mark formed after etching；
4）In step 3）In photo-etching mark after the etching of formation, material filling is carried out, the back of the body of the present invention is formed with this
Face photo-etching mark；
5）Semiconductor front is surface-treated, adhering wafers carrier, to carry out follow-up back process；
6）Local process processing is carried out using back process, conductive photo-etching mark is opened；
7）Metal material is filled in conductive photo-etching mark, surface metal material is handled, it is ensured that printing opacity overleaf
There is no metal residual in film layer.
The step 1）In, semiconductor includes：Single-chip, multichip semiconductor chip or the electronics member with semiconductor property
Part；Wherein, the electronic component with semiconductor property includes：With semiconductor technology or semiconductor subassembly electronic component
Deng；
The light-transmissive film layer is that to meet the etching rate and semiconductor of light-transmissive film layer material itself by one or more variant
（Particularly there is larger difference）And the light-transmitting materials with preferable insulating properties are constituted（If light-transmissive film layer is by SiO2Film institute
Constitute）, the thickness of light-transmissive film layer can be more than 400 angstroms；Growing the method for a light-transmissive film layer includes：Precipitated using the back side, film is given birth to
It is long or precipitated by the back side, the method that film growth is combined with grinding carries out growing a light-transmissive film layer.
The step 2）In, photo-etching mark includes：The alignment mark of the standard set for certain type board, some its
His alignment mark（Alignment mark etc.）Or for doing the mark of conduction.
The step 3）In, the partial light permeability film layer etched away refers to after the substrate of semiconductor has been etched, and continues saturating
Etch depth in light film layer, wherein, the etch depth in light-transmissive film layer can be 200 angstroms of thickness less than light-transmissive film layer
Degree.
The step 4）In, it is the material for having larger difference with the substrate material of semiconductor to carry out the material in material filling
Matter, including：The material of insulator, various metals or metal alloy etc.；Such as, the material in the carry out material filling can be by
The material that one or more substrate materials with semiconductor have larger difference is constituted.
The step 5）In, surface treatment refers to deal with to having filled the semiconductor front after material, including：Return at quarter
Reason, planarization process or surface cleaning processing etc., can use back the techniques such as quarter if desired for the original front pattern of guarantee, such as
Ensure that with what is preferably planarized planarization technology can be used, also just like techniques such as surface cleaning；
In the adhering wafers carrier, carrier adhesive and chip carrier are generally comprised；The carrier adhesive can make
Radiated and engaged with UV；The back process includes：Back side photoetching, etching, backside particulate injection, the long film in the back side and back side thinning
Deng.
The step 6）In, local process processing includes：It is real by photoetching, etching technics or other micro- technique such as laser etc.
The conducting of existing semiconductor back surface conduction photo-etching mark.
The step 7）In, metal material is made up of one or more metal materials, preferably positive with semiconductor
Conducting metal identical metal is filled, has preferable conduction to meet both joints；The loading for filling metal material is big
In or equal to the depth of conduction photo-etching mark opened；The method of processing surface metal material includes：Mechanical processing, change
Learn mechanical treatment or return carving technology processing.
The present invention is to utilize some special materials（Such as the good material of light transmittance）And etching rate between unlike material
Difference and propose it is a kind of can apply semiconductor back surface be aligned process.Offer semiconductor back surface precipitation or
Grow certain thickness film layer, the film layer material need with good translucency and during growth planarization it is preferable, will also be with this
Semiconductor rear substrate material has larger rate of etch poor, thus can using the film layer as next step etching stop-layer；
Then photo-etching mark is made using photoetching process in semiconductor front, these marks include alignment mark and are used as conductive mark
Note；These marks are etched with etch process, until using the film layer that grows before as stop-layer, and are etched into wherein certain
Thickness is best；Then insert metal in the mark of these etchings or some other and Semiconductor substrate material has larger difference
Different material, forms the back side photo-etching mark of the present invention with this；Then it is surface-treated in semiconductor front, adhering wafers
Carrier, can carry out back process；Further, overleaf handled in technique by local process, open and fill conduction
Mark, can be such that these marks are used as conductive through hole.It is described above, after tunic layer is added, at this partly
During conductor back side photoetching process, because of described photo-etching mark, the alignment essence of back side photoetching process can be both substantially improved
Degree（Light-transmitting materials）, again can be using the film layer as the insulating barrier with positive surface semiconductor, these are all produced to whole back process
Very big benefit, is even more to serve very big optimization to insulating properties, the security of whole device.
Therefore, the present invention can effectively improve the register effects in back process, prevents back pollution, can also produce safe
Conductive through hole.
Brief description of the drawings
The present invention is further detailed explanation with embodiment below in conjunction with the accompanying drawings：
Figure 1A is the photo-etching mark schematic diagram in photoetching process；
Figure 1B -1,1B-2 are the photo-etching mark schematic diagrames in etching technics；
Fig. 1 C-1,1C-2 are to carry out the schematic diagram after material filling；
Fig. 1 D-1,1D-2 are the schematic diagrames after adhering wafers carrier；
Fig. 1 E are the schematic diagrames that mark is exposed through back side thinning；
Fig. 2 is that the back side of the present invention grows the schematic diagram of light-transmissive film layer；
Fig. 3 is the photo-etching mark schematic diagram in the photoetching process of the present invention；
Fig. 4 is the photo-etching mark schematic diagram in the etching technics of the present invention；
Fig. 5 is the schematic diagram after the carry out material filling of the present invention；
Fig. 6 is the schematic diagram after the adhering wafers carrier of the present invention；
Fig. 7 be the present invention back side photoetching and etching technics after schematic diagram；
Fig. 8 is the schematic diagram after the back side filling and surface treatment of the present invention.
Description of reference numerals is as follows in figure：
1 is Semiconductor substrate, and 2 be the first technique film layer, and 3 be the second technique film layer, and 4 be the 3rd technique film layer, and 5 be photoetching
Glue, 6 be the photo-etching mark in photoetching process, and 7 be semiconductor subassembly, and 8 be the photo-etching mark in etching technics, and 9 be to be filled
Material, 10 be adhesive, and 11 be chip carrier, 12 for exposure mark；
20 be semiconductor subassembly of the invention, and 21 be Semiconductor substrate, and 22 be the first technique film layer of the invention, and 23 be this
Second technique film layer of invention, 24 be the 3rd technique film layer of the invention, and 25 be light-transmissive film layer, and 26 be photoresist of the invention,
27 be the photo-etching mark in the etching technics of the present invention, and 28 be the material being filled of the invention, and 29 be the carrier of the present invention
Adhesive, 30 be chip carrier of the invention, 31 metal material to be filled.
Embodiment
The present invention's is applied to the preparation method that semiconductor back surface is aligned and turned on, including step：
1）A light-transmissive film layer 25 is grown in the semiconductor back surface of offer（As shown in Figure 2）；
Wherein, semiconductor includes：Single-chip, multichip semiconductor chip or the electronic component with semiconductor property；Wherein, have
The electronic component for having semiconductor property includes：With semiconductor technology or semiconductor subassembly electronic component etc.；Used in Fig. 2
Semiconductor be a kind of semiconductor subassembly 20；
Light-transmissive film layer 25 is that a kind of have preferable light-transmissive and the etching rate and semiconductor of film layer material itself has
Difference（Particularly there is larger difference）And the film layer with preferable insulating properties, such as can be to meet light-transmissive film by one or more
Itself material of the etching rate and semiconductor of layer is variant（Particularly there is larger difference）And the printing opacity material with preferable insulating properties
What matter was constituted（If light-transmissive film layer 25 is the oxidation film commonly used in semiconductor manufacturing, such as SiO2Film is constituted, SiO2With saturating
Good and larger with the rate of etch of the semiconductor back surface material benefit of photosensitiveness）.
The thickness of light-transmissive film layer 25, it is impossible to too thin, otherwise can not play a part of stop-layer, such as can be more than 400 angstroms, excellent
Elect 2000 angstroms as；
Growing the method for a light-transmissive film layer 25 includes：Precipitated using the back side, film grows or precipitated by the back side, film growth is with grinding
Grind the method being combined and carry out one light-transmissive film layer 25 of growth, for example, using the planarization such as back side precipitation or film growth preferably side
Method grows film layer, even and if or using back side precipitation or film growth of planarization bad method and combining the methods such as grinding and realizing
The growing film layer method of planarization.
Step 1）In, by the way that there is larger rate of etch as principal character using light-transmissive and with Semiconductor substrate material
Light-transmissive film layer, can effectively solve the problems, such as through hole filling imperfection and back pollution.
2）In semiconductor front photo-etching mark is made with photoetching process（As shown in Figure 3）；
Wherein, photo-etching mark includes：The standard set for certain type board alignment mark (such as ASML, NIKON,
The boards such as CANON), some other alignment marks（Alignment mark etc.）Or for doing the mark of conduction（Through leading for semiconductor
Electric through-hole etc.）.
3）With etch process etch step 2）In photo-etching mark, until with step 1）The light-transmissive film layer of growth is used as stopping
Layer, and etch away sections light-transmissive film layer 25, the photo-etching mark 27 formed after etching（As shown in Figure 4）；
Wherein, the partial light permeability film layer 25 etched away refers to after Semiconductor substrate 21 has been etched, and continues in light-transmissive film layer
Etch depth in 25, wherein, the etch depth in light-transmissive film layer 25 can be 200 angstroms of thickness less than light-transmissive film layer 25
Degree.If total etch amount is 1000 angstroms.
4）In step 3）In photo-etching mark after the etching of formation, carry out material 28 and fill, form the present invention's with this
Back side photo-etching mark or conductive through hole（As shown in Figure 5）；
Wherein, material 28 is the material for having larger difference with the material of substrate 21 of semiconductor, including：The material of insulator
（Such as oxide）, various metals（Such as tungsten）Or metal alloy（Such as metallic compound）Deng；Such as, the material 28 can be by one kind
Or the material that a variety of materials of substrate 21 with semiconductor have larger difference is constituted, such as material 28 is the material by insulator with leading
Electric metal constitutes or is directly made up of a kind of metal or certain metal alloy（It is usually coated in photo-etching mark 27 i.e. first after etching
The material of insulator, which is refilled, leads electric metal, also or directly fills a kind of metal or certain metal alloy）.
5）Semiconductor front is surface-treated, adhering wafers carrier 30 as one kind, to carry out follow-up back process（Such as Fig. 6
It is shown）；
Wherein, surface treatment refers to deal with to having filled the semiconductor front after material, including：Return quarter processing, plane
Change processing or surface cleaning processing etc., can use back the techniques such as quarter if desired for the original front pattern of guarantee, such as to ensure tool
There is what is preferably planarized can use planarization technology, also just like techniques such as surface cleaning；
In the adhering wafers carrier, carrier adhesive 29 and chip carrier 30 are generally comprised；The carrier adhesive 29
UV can be used to radiate and engage；The effect of the chip carrier 30 is：Play outside protection front pattern, mainly permit holding
Row technique for manufacturing back；
The back process includes：Back side photoetching, etching, backside particulate injection, the long film in the back side and back side thinning etc..
6）Local process processing is carried out using back process, conductive photo-etching mark is opened（As shown in Figure 7）, made with this
Used for conductive through hole；
Wherein, local process processing refers to realize semiconductor by photoetching, etching technics or other micro- technique such as laser etc.
The conducting of back side conduction photo-etching mark.
7）Metal material is filled in conductive photo-etching mark（Such as tungsten）31, by mechanically handling, at chemical machinery
Reason returns the methods such as carving technology processing, handles surface metal material, it is ensured that do not have metal residual on light-transmissive film layer 25 overleaf,
So as not to influence the alignment precision of follow-up back process（As shown in Figure 8）.
Wherein, metal material 31 is made up of one or more metal materials, is preferably led with the positive filling of semiconductor
Electric metal identical metal（Such as tungsten）（Such as step 4）In metal）, have preferable conduction to meet both joints；Filling
The loading of metal material 31 is more than or equal to the depth of opened conduction photo-etching mark.
The present invention in semiconductor back surface by growing a film layer（With good translucency）, pass through positive photoetching and etching
Technique directly etches into alignment mark in the film layer and fills material, and the back side photo-etching mark of the present invention is formed with this.
Further, overleaf handled in technique by local process, open and fill metal material to some conductive photoetching
Mark, can be such that these marks are used as conductive through hole.Therefore, the present invention can improve the alignment of semiconductor back surface technique not
It is good, while being also prevented from back pollution, produce the conductive through hole of safety.
Claims (10)
1. a kind of preparation method for being aligned and turning on applied to semiconductor back surface, it is characterised in that including step：
1）A light-transmissive film layer is grown in the semiconductor back surface of offer；The light-transmissive film layer is a kind of with good light permeability and surface
Planarization performance, and light-transmissive film layer etching rate and semiconductor material itself be variant and film layer with good insulation properties；
2）In semiconductor front photo-etching mark is made with photoetching process；
3）With etch process etch step 2）In photo-etching mark, until with step 1）The light-transmissive film layer of growth as stop-layer,
And etch away sections light-transmissive film layer, the photo-etching mark formed after etching；
4）In step 3）In photo-etching mark after the etching of formation, material filling is carried out, back side photo-etching mark is formed with this；
5）Semiconductor front is surface-treated, adhering wafers carrier, to carry out follow-up back process；
6）Local process processing is carried out using back process, conductive photo-etching mark is opened；
7）Step 6）Conductive photo-etching mark in fill metal material, processing surface metal material, it is ensured that overleaf saturating
There is no metal residual in light film layer.
2. the method as described in claim 1, it is characterised in that：The step 1）In, semiconductor includes：Single-chip, semiconductor
Multi-wafer or the electronic component with semiconductor property；Wherein, the electronic component with semiconductor property includes：With semiconductor
Technique or semiconductor subassembly electronic component；
The light-transmissive film layer is by one or more etching rates for meeting light-transmissive film layer and semiconductor material itself be variant and tool
What the light-transmitting materials for having insulating properties were constituted；The thickness of light-transmissive film layer is more than 400 angstroms；
Growing the method for a light-transmissive film layer includes：Precipitated using the back side, film is grown or precipitated by the back side, film growth is mutually tied with grinding
The method of conjunction carries out one light-transmissive film layer of growth.
3. method as claimed in claim 2, it is characterised in that：The light-transmissive film layer is by SiO2Film is constituted.
4. the method as described in claim 1, it is characterised in that：The step 2）In, photo-etching mark includes：Set for board
Standard alignment mark, alignment mark or for do conduction mark.
5. the method as described in claim 1, it is characterised in that：The step 3）In, the partial light permeability film layer etched away refers to
After the substrate of semiconductor has been etched, continue the etch depth in light-transmissive film layer, wherein, the etch depth in light-transmissive film layer
For 200 angstroms of thickness less than light-transmissive film layer.
6. the method as described in claim 1, it is characterised in that：The step 4）In, carry out material filling in material be by
What one or more discrepant materials of substrate material with semiconductor were constituted, including：Material, metal or the gold of insulator
Belong to alloy.
7. the method as described in claim 1, it is characterised in that：The step 5）In, surface treatment refers to having filled material
Semiconductor front afterwards is dealt with, including：Return quarter processing, planarization process or surface cleaning processing；
In the adhering wafers carrier, carrier adhesive and chip carrier are included；The carrier adhesive is radiated and connect using UV
Close；
The back process includes：Back side photoetching, etching, backside particulate injection, the long film in the back side and back side thinning.
8. the method as described in claim 1, it is characterised in that：The step 6）In, local process processing includes：Pass through light
Quarter, etching technics or laser realize the conducting of semiconductor back surface conduction photo-etching mark.
9. the method as described in claim 1, it is characterised in that：The step 7）In, metal material is by one or more gold
Category material is constituted；
The loading for filling metal material is more than or equal to the depth of opened conduction photo-etching mark；
The method for handling surface metal material, including：Mechanical processing, chemical mechanical processing return carving technology processing.
10. method as claimed in claim 9, it is characterised in that：The metal material is conductive with the positive filling of semiconductor
Metal identical metal.
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| CN104576310B true CN104576310B (en) | 2017-08-08 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658290B (en) * | 2017-09-26 | 2020-07-31 | 上海华虹宏力半导体制造有限公司 | Method for forming photoetching alignment mark |
| CN108899302A (en) * | 2018-07-04 | 2018-11-27 | 南通沃特光电科技有限公司 | A kind of back-illuminated type CMOS sensor singualtion method |
| CN109559981B (en) * | 2018-09-26 | 2020-11-20 | 厦门市三安集成电路有限公司 | Method for solving problem that high-transmittance wafer cannot be identified in photoetching alignment |
| CN109534283B (en) * | 2018-11-15 | 2020-09-25 | 赛莱克斯微系统科技（北京）有限公司 | Micro-electro-mechanical device preparation method and device |
| CN113295500A (en) * | 2021-06-29 | 2021-08-24 | 上海华力微电子有限公司 | Preparation method of transmission electron microscope planar sample |
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| CN101034663A (en) * | 2006-03-07 | 2007-09-12 | 国际商业机器公司 | Method and structure for improved alignment in mram integration |
| CN103050480A (en) * | 2012-08-14 | 2013-04-17 | 上海华虹Nec电子有限公司 | Technical method for imaging rear side of silicon wafer |
| CN103165442A (en) * | 2011-12-12 | 2013-06-19 | 上海华虹Nec电子有限公司 | Back side graphical method |
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| US5640053A (en) * | 1994-07-01 | 1997-06-17 | Cypress Semiconductor Corp. | Inverse open frame alignment mark and method of fabrication |
| CN101034663A (en) * | 2006-03-07 | 2007-09-12 | 国际商业机器公司 | Method and structure for improved alignment in mram integration |
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| CN103050480A (en) * | 2012-08-14 | 2013-04-17 | 上海华虹Nec电子有限公司 | Technical method for imaging rear side of silicon wafer |
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