CN104576041A - Substrate with composite electrode layer for large single-layer ceramic passive element - Google Patents
Substrate with composite electrode layer for large single-layer ceramic passive element Download PDFInfo
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- CN104576041A CN104576041A CN201310507397.9A CN201310507397A CN104576041A CN 104576041 A CN104576041 A CN 104576041A CN 201310507397 A CN201310507397 A CN 201310507397A CN 104576041 A CN104576041 A CN 104576041A
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- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Laminated Bodies (AREA)
Abstract
The invention relates to a substrate of a large single-layer ceramic passive element with a composite electrode layer, wherein the substrate of the large single-layer ceramic passive element is a square or wafer structure body, and the large single-layer ceramic passive element is manufactured by a ceramic injection molding technology and has the following characteristics: the substrate with the large single-layer ceramic passive element and the composite electrode layer is formed by sintering the electrode boss, the edge of the rounded electrode boss, the joint of the electrode boss and the substrate body and the edge of the substrate body through a composite debonding method and atmosphere and pressure control, and then distributing and applying the composite electrode layer through low-temperature vacuum sputtering.
Description
Technical field
Large-scale single-layer ceramic passive device is with the substrate of composite electrode layers, this large-scale single-layer ceramic passive device substrate is that following characteristics is made by Ceramic Powder Injection Molding by the knot structure body ﹐ of square or positive disk, contain: both sides have electrode boss, the electrode boss edge of corners, the Bian Yuan ﹐ of electrode boss and wafer body junction and wafer body is after compound takes off Nian Fa ﹑ atmosphere and Stress control sinters, cryogenic vacuum sputter charity combination electrode Ceng ﹐ is adopted to become the substrate of a kind of large-scale single-layer ceramic passive device with composite electrode layers again, technical field belonging to the present invention, comprise: ceramic powder injection molding, compound Tuo Nian ﹑ atmosphere and Stress control sinter and cryogenic vacuum sputter composite film coating technology.
Background technology
Sell single-layer ceramic passive device on the market as ceramic capacitor (Ceramic Capacitors), varistor (MetalOxideVarsitor) and piezoelectric ceramic device (PIEZO), be in the past over 100 years electronic installation as conventional refrigerator, television set, air conditioner, even to various vacuum cleaner in modern age, server power supply supply etc., it is all the basic electronics passive device that can not or lack, estimate that annual whole world demand about has the market supply of 5,000,000, but wherein there are nearly 1,000,000 to be large-scale single-layer ceramic passive device, be applied on precision electronic device that high-side current voltage stands.
In recent years, the requirement of the miniaturization of electronic product undue weight and high integration, it is passive that everybody sight and research and development energy all concentrate on small-sized multi-layer ceramics, and have ignored the improvement of large-scale single-layer ceramic passive device, very unfortunately.Wherein, it is perplex industry project at most that collision unfilled corner loss (weight of full length film is larger) of all ceramic passive devices, density unevenness and electrode are coated with bad, defective products must be chosen with the production that exceeds the quata, and after using expensive silver slurry or the coating of copper slurry, high temperature sintering is to expect the electrode surface and the non-defective unit that obtain consolidation again, except processing consume and consuming except expensive electrode material, multiple high temp sintering and processing procedure are changed derivative function deterioration, energy waste and carbon emission Wen Ti ﹐ and really should be improved with better way.
First traditional large-scale single-layer ceramic passive device substrate processing procedure must be mixed in ceramic powders with a large amount of lubricant greases and wax-based material, ball milling via complicated and time consumption mixes powder and granulation mode, adopt large-scale oil pressure briquetting machine subsequently, substrate green compact are suppressed out, because the area of large size ceramic passive device substrate (is greater than 100mm greatly
2) and thickness more than 1mm, pressure knot green can not adopt and only can design with right angle, mainly be the restriction of vertical compression mould, there is extra prominent features that stress can be caused to pass on and be not really accumulated in feature and square edge, the powder of raw bad body is accumulated in these feature locations just with just variant in green centre, the easy torsional deformation of sintering process.And, direct press type Design of Dies corners must be edge mold and punching head being formed sharp green die cavity end, the sharp edges of such weakness is easy to collapse angle and then fracture, outside maintaining not easily, also easily causes defect and the falling mould debris contamination product of green.
The green compact obtained after vertical compression pressure knot, must adopt long heat to take off the glutinous mode program of at least 12 hours, could remove a large amount of lubricant contained in green and wax, then carry out sintering the substrate obtaining large-scale single-layer ceramic passive device.Because do not have effective way to form boss feature and corners edge, just cannot prevent the collision of rear processing procedure or even product from suffering big current and large voltge surge process, break in corner and electric pole short circuit initiation is burnt, and is problem all the time.
Subsequently, the substrate of large size ceramic passive device must adopt traditional silver slurry or copper slurry charity electrode surface, that adheres to as sintered metal electrode and ceramic plane due to the low-temperature glaze that must be mixed in slurry body more than at least 5% assists, cause the little truth function that cannot play large size ceramic passive device of electrode area, also affect electrode adhesion (generally lower than 2kg pulling force) because glaze adds, the function effect therefore for large size ceramic passive device is very acute.
Sum up the missing point that prior art occurs, comprise as follows:
Large size ceramic passive device green compact all use dry-oil press vertical compression Fang Fa ﹐ suffer from large area and the thick when product demand ﹐ of thickness due to pressure pass on inadequate Jun Yun ﹐ powder easily in corner, surface and center form uneven Mi degree Fen Bu ﹐ to sinter meron torsional deformation very large.
Use dry pressing to the addition of more Run Hua Ji ﹐ cause de-glutinous binder removal processing procedure to hold together length to solve above-mentioned production Wen Ti ﹐, production efficiency is low.Time that ratio (when meaning will obtain the size of 1mm, green compact will control at the 1.2mm) ﹐ that is greater than 1.2 takes off glutinous binder removal must increase to use too much lubricant to cause shrinking.
Edge due to the Xian ﹐ above-mentioned large size ceramic passive device substrate of dry pressing mould be all Zhi Jiao ﹐ and cannot create electrode surface and body separate boss feature, in time carrying out electrode surface and be coated with construction, produce the problems such as degree and decentraction of overflowing easily.Affect product electric function very acute.
With conventional silver slurry and copper starch construct with wire mark after carry out double sintering, or traditional vacuum splashing and plating copper electrode, weakness is far more than for soldering alloy resistivity, under the impact of large voltage and electric current, cannot high temperature be stood and produce electrode and liquefy, impedance rising.
Summary of the invention
Because above-mentioned existing disappearance, main purpose of the present invention is exactly at the substrate providing a kind of large-scale single-layer ceramic passive device with composite electrode layers, this large-scale single-layer ceramic passive device substrate is that following characteristics is made through Ceramic Powder Injection Molding by the knot structure body ﹐ of square or positive disk, contain: both sides have electrode boss, the electrode boss edge of corners, the Bian Yuan ﹐ of electrode boss and wafer body junction and wafer body is after compound takes off Nian Fa ﹑ atmosphere and Stress control sinters, cryogenic vacuum sputter charity combination electrode Ceng ﹐ is adopted to become the substrate of a kind of large-scale single-layer ceramic passive device with composite electrode layers again, to overcoming the difficulty of the product that prior art makes.
For achieving the above object, the technology used in the present invention means, program is as follows:
The pottery body of powder of passive device and mixing of high molecular polymer adhesive; wherein high molecular polymer adhesive comprises paraffin: zinc stearate: high-density linear polyethylene (HDPE) the: Yi vinyl acetate copolymerized compound of Xi ﹑ (EVA); make the particle of 2 ~ 8mm or polygonal fragment through Homogeneous phase mixing, the use of injection moulding is provided.
Through injection machine above-mentioned material is injected in there is special electrode boss and corners product mold in, form a kind of green (GreenPart) of large-scale single-layer ceramic passive device.
This green can adopt the de-glutinous technology of combined type, namely removes paraffin contained in high molecular polymer adhesive and zinc stearate in organic solvent fast at least more than more than 95% percent by volume; Then, the low melting point adhesive then in the de-glutinous mode of heat removed remaining high-density linear polyethylene (HDPE) and the vinyl acetate copolymerized compound of Yi Xi ﹑ (EVA) and remain.By this processing procedure obtain large-scale single-layer ceramic passive device take off glutinous after green be called brown base substrate (BrownPart).Usual heat takes off the glutinous stage and together can carry out in conjunction with the high temperature sintering furnace of most back segment.
Heat is de-glutinous, and adopt with high temperature sintering can the sintering furnace of controlled atmospher and pressure, use blanket of nitrogen under 60 ~ 80kpa (0.5 ~ 0.6atm) pressure in the de-glutinous section of heat, convenient residual high molecular polymer adhesive can become gas by solid conversion at low pressures, removal is decomposed in vaporization, controls the de-glutinous temperature of heat and convert high temperature sintering to after about 600 DEG C; Subsequently in high temperature sintering section, then switch to general air and setting pressure scope at 102 ~ 110kpa (1.0 ~ 1.1atm) pressure, obtain the substrate of large-scale single-layer ceramic passive device after sintering.
The electrode boss on clean sintering meron surface, simply blows band hairbrush with pressure-air and removes its surface dust.
With cryogenic vacuum sputter charity combination electrode on the electrode boss of this large-scale single-layer ceramic passive device substrate, the transition zone that the plated film mode that this electrode structure uses is first charity first composite bed, adopt joint and the fade function of the conductive layer using other alloys with it of nichrome (Cr-Ni) etc. as ceramic passive device substrate material and the first composite bed, and then the conductive layer of charity first composite bed, base metal as good in conductivity such as copper (Cu)/aluminium (Al), the transition zone of the first composite bed and conductive layer combination form a basic composite electrode layers, so repeat plural number time construction at least one times.
Complete the substrate of a kind of large-scale single-layer ceramic passive device with composite electrode layers.
In addition, the present invention discloses the substrate of a kind of large-scale single-layer ceramic passive device with composite electrode layers further:
This large-scale single-layer ceramic passive device substrate is that following characteristics is made through Ceramic Powder Injection Molding by the knot structure body ﹐ of square or positive disk, contain: both sides promote the loss that the production efficiency manufacturing substrate reduces successive process collision unfilled corner after having the Bian Yuan ﹐ feature shaping that cannot be made in a large number by traditional vertical compression mould of electrode boss, the electrode boss edge of corners, electrode boss and wafer body junction and wafer body greatly.
Subsequently, after compound takes off Nian Fa ﹑ atmosphere and Stress control sinters, cryogenic vacuum sputter charity combination electrode Ceng ﹐ is adopted to adopt composite bed with transition zone and conductive layer combination again, greatly can improve the function of the through-flow difference of electrode adhesion Xia Jiang ﹑ proof voltage that scolding tin erosion electrode causes, effectively increase electrode area simultaneously, promote bulk ceramics passive device function.
Accompanying drawing explanation
Fig. 1 is the flow chart of the large-scale single-layer ceramic passive device of the present invention with the substrate of composite electrode layers.
Fig. 2 is that the large-scale single-layer ceramic passive device of the present invention implements illustration with the ceramic powder injection molding of the substrate of composite electrode layers.
To be the present invention's large-scale single-layer ceramic passive device take off glutinous base reason illustration with the compound of the substrate of composite electrode layers to Fig. 3.
Fig. 4 is that the large-scale single-layer ceramic passive device of the present invention implements illustration with the substrate with electrode boss and corners of the substrate of composite electrode layers.
Fig. 5 is the functional interpretation illustration of the large-scale single-layer ceramic passive device of the present invention with the substrate top electrode boss feature of the substrate of composite electrode layers.
Fig. 6 for the large-scale single-layer ceramic passive device of the present invention with composite electrode layers substrate the composite deposite that describes implement illustration.
Fig. 7 for the large-scale single-layer ceramic passive device of the present invention with composite electrode layers substrate the composite deposite that describes can melt the enforcement illustration of barrier as tin-copper eutectic.
The reference illustration of Fig. 8 for providing gun-metal eutectic to melt phenomenon.
Description of reference numerals
11------transition zone
12------conductive layer
21------ceramic powders and adhesive
22------scissors mixes Chain machine
23------graininess shoots material
24------injection (mo(u)lding) machine
241------green compact
The de-glutinous equipment of 25------compound
251------palm fibre base (Brownpart)
26------sintering furnace
261------substrate/sintered body
31------solvent is de-glutinous
310------micro channel
311------coheres the defeated and dispersed layer of auxiliary agent
The de-glutinous mechanism figure of 32------
320------is as finger shape passage
321------coheres auxiliary agent
322------powder ball block
33------palm fibre base substrate
The link of 331------pendulum model
The positive square piece of 41------
The positive disk of 42------
51------electrode is asymmetric
52------electrode is symmetrical
53------external lead wire
71------goes between
72------scolding tin
S------substrate
C------electrode
W------goes between
Embodiment
By particular specific embodiment, embodiments of the present invention are described below, person skilled in the art scholar can understand other advantages of the present invention and effect easily by content disclosed in the present specification.
Referring to graphic explanation embodiments of the invention, it should be noted, the graphic signal for simplifying is graphic below, only basic conception of the present invention is described in a schematic way, therefore only the structure relevant with the present invention is illustrated in graphic but not component number, shape and size drafting when implementing according to reality, it is actual when implementing, and the form of each element, quantity and ratio are not limited with diagram, work can be needed to change according to actual design, close first chat bright.
Shown in Fig. 1, the present invention is the substrate of a kind of large-scale single-layer ceramic passive device with copper electrode, and its fabrication schedule illustrated in summary of the invention, did not repeat to repeat at this.Please coordinate further referring to shown in Fig. 2 to Fig. 8.
About the forming technique of large-scale one side pottery passive device substrate, that the present invention adopts ceramic porcelain powder injection forming (Ceramic-powderInjection Molding as described above with respect to Fig. 2, CIM) program diagram manufactured, figure (21) first prepares the adhesive of the high molecular polymer composition of the ceramic powder powder of ceramic passive device and necessity, puts into the special shearing of figure (22) and mixes Chain machine and carry out heating and be mixed into shooting material of injection.Then, undertaken as figure (23) mode shoots material for injection with the hot-extrudable graininess becoming 2 ~ 8mm by shooting material, to scheme (24) special injection machine by the green (Green part) of large-scale single-layer ceramic passive device if figure (241) is by this particular manufacturing craft injection moulding.After injection moulding, with the de-glutinous equipment of the compound scheming (25), high molecular polymer contained by the first adhesive low with solvent Rapid Extraction melting temperature, when completing this solvent and taking off glutinous step, the green removing adhesive is called that brown base (Brownpart) is as figure (251), the sintering furnace brown base being moved into figure (26) carries out heating in vacuum mode, and to carry out high temperature de-glutinous, burn off than higher temperature adhesive contained by high molecular polymer, carry out high temperature sintering subsequently and obtain the substrate (Sinteredpart) of large-scale single-layer ceramic passive device as figure (261).Wherein, there is a specific amount of contraction different according to finished product requirement difference by green compact (241) to sintered body (261).
First table be stated as the operating parameter that the ceramic passive device of enumerating two types carries out with the processing procedure shown in Fig. 2, because the density of each large-scale single-layer ceramic passive device substrate is not identical, show in the parameter of paying not identical completely yet, ask your office to fully understand.
The CIM parameter example of the first table, large-scale single-layer ceramic passive device substrate
In addition, your office to fully understand the green/sizes of substrate magnification ratio (OSF, OversizeShrinkageFactor) of ceramic powder injection molding for convenience of, as the second table is depicted as calculation procedure, the ceramic substrate that wherein first hypothesis obtains is zinc oxide, and density is 5.61g/cm3; Adhesive is 1.02g/cm3.The mathematical approach then must be utilized to extrapolate the weight ratio of zinc oxide and adhesive, can as the data of producing.
The computation paradigm of the second table, adhesive of the present invention formula
De-the sticking of compound alleged by the present invention is asked for an interview represented by Fig. 3 with sintering, de-glutinous step in Fig. 2 (26) belongs to compound and takes off the de-glutinous section of glutinous low temperature, as figure (31) is depicted as the description of its de-glutinous mechanism, the high molecular polymer that low temperature (60 DEG C) soaks the low melting points such as the PW/SA/ZS extracted in adhesive is carried out with organic solvent (petroleum-based organic solvent is as normal heptane and n-hexane), , it is made to produce micro channel (Fineporechannel) as figure (310), top layer is formed coheres the defeated and dispersed layer of auxiliary agent (Binderrecession) as figure (311), causing green to produce Porous shape facilitates next de-glutinous program to carry out.When complete low-temperature solvent de-glutinous after, move into the sintering furnace shown in the second figure (26) subsequently, carry out high temperature section Vacuum Heat divide free glutinous, as the de-glutinous mechanism figure of Fig. 3 (32), for compound takes off glutinous second step, main purpose is high-density linear polyethylene (HDPE) remaining in green and the vinyl acetate copolymerized compound of Yi Xi ﹑ (EVA) with thermal decomposition manner, at this moment produce if the passage (Fingering) of finger shape is as figure (320) inside base substrate, cohere auxiliary agent (Binder) as mobile in figure (321) decomposes, minority adhesive is only had to continue to support powder ball block (Agglomerate) as figure (322), maintain base substrate geometry.Usually this stage can carry out in conjunction with the presintering section of sintering furnace.The adhesive of high temperature by the swabbing action of high temperature and vacuum, the high temperature adhesive (HDPE/PE/EVA) that decomposes of vaporization just along low temperature before take off glutinous after path get rid of.Subsequently, shown in Fig. 3 (33), carry out the de-green sticked and be called brown base substrate, because polygonal ceramic powder still can be fitted together to the bond (Pendularbond) forming pendulum model mutually as shown in figure (331), therefore can formalize and mobile unlikely avalanche.Therefore can sinter.High temperature positive sintering just can carry out, and is removed the solid-state diffusion mechanism of concrete dynamic modulus body of powder through high temperature sintering of adhesive, can obtains highdensity ceramic substrate.
Fig. 4 represents the section graphic feature of large-scale single-layer ceramic passive device for the present invention, and figure (41) is positive square piece; Figure (42) is positive disk, and thin portion enlarged drawing B section oblique line part is a kind of sectional drawing of large-scale single-layer ceramic passive device; Wherein S: be the length of side (15mm≤SorD≤100mm) of positive square piece; As the diameter for Zheng Yuan Xing ﹐ then S=D=circle.T: be the thickness (1mm≤T≤50mm) of potsherd; T: be electrode boss height (0.1mm≤t≤1/2T), boss exceeds on large-scale single-layer ceramic passive device maximum area bottom surface, for subsequent electrode charity.TR: for the size range of the large-scale single-layer ceramic passive device wafer body Bian Yuan ﹐ R of corners is (0.05mm≤R≤1/2T).Tr: for the electrode boss edge of corners is (0.05mm≤r≤1/2t) with single-layer ceramic passive device body Xiang Jie Chu ﹐ r size range.
Asking for an interview Fig. 5, when completing the large-scale single-layer ceramic passive device substrate with electrode boss feature, just needing the charity starting to carry out compound electric pole-face.Due to the expensive metal powder (silver slurry or copper slurry) that the past adopts, or even traditional vacuum splashing and plating, vapour deposition method, because there is no the design of boss feature, substrate (S, as schemed to indicate) upper charity electrode (C) easily produces mobile with the inaccurate problem of contraposition, result causes the asymmetric or decentraction of double-sided electrode (C), as shown in Fig. 5 (51).In the present invention then for shown in Fig. 5 (52), we can adopt metal as suitable in aluminium alloy or stainless steel milling go out cover tool, substrate (S) feature of special electrode boss of the present invention is utilized accurately to locate, and even no matter adopt which kind of metallic slurry not imitate or vacuum evaporation, vacuum splashing and plating vacuum multi-arc ion plating, electrode (C) accurately location and symmetrical can be made.Simultaneously, shown in Fig. 5 (53), the body surface of the substrate (C) of large-scale single-layer ceramic passive device is exceeded due to electrode boss (S), when carrying out external lead wire (W) and welding, lead-in wire (W) bottom can not contact with the body surface of the substrate of large-scale single-layer ceramic passive device, avoid corona effect (CoronaEffect, a kind of lead-in wire contacts the starting the arc caused with non-contacting short space with ceramic passive device, the electrical Interference that past ceramic passive device is least easily discovered), be also a kind of solution of novelty.
The enforcement example of the represented Composite Coatings rete for the present invention's employing of Fig. 6, for the displaying of two-layer Composite Coatings rete, first with the transition zone (11) of vacuum splashing and plating construction charity first composite bed on large-scale one side pottery passive device substrate (S), the effect that this transition zone (11) engages with the conductive of the first composite bed as ceramic passive device surfacing; Carry out the charity of the conductive layer (12) of the first composite bed subsequently; Then transition zone (11) and conductive layer (12) are combined into the first composite bed, so repeat to be once the enforcement example of this figure.
About this conductive composite layer enforcement with vacuum splashing and plating parameter example as the 3rd table shown in.
Parameter example implemented by 3rd table, large-scale single-layer ceramic passive device combination electrode
Fig. 7 is the enforcement example of the Composite Coatings rete that the present invention adopts, in order to explain how composite deposite is resisted scolding tin and corroded and high-temperature digestion effect, please first see the relevant stannum-copper binary alloy phasor (PhaseDiagram) of Fig. 8, data provides (TheIntegratedThermodynamicDatabankSystem by international thermodynamic database system, www.factsage.com), under random situation and an atmospheric pressure, there is so-called eutectic and melt the temperature of (Eutectic melting) the position (wherein Cu:Sn=97:3) of 214 DEG C in tin-copper, more much lower more than traditional scolding tin temperature range (230 ~ 260 DEG C), once there is eutectic phenomena, the phenomenon that tin-copper eutectic melts can continue diffusion until temperature is lower than this melting temperature.Therefore, utilization of the present invention and tin eutectic melting point are higher than the third metal of this temperature or other alloys, be used as the barrier (Barrier) stopping that tin-copper eutectic melts, also be just the buffer layer material of composite deposite used in the present invention, for other alloys etc. that nichrome (Cr-Ni) is main with it, effectively can stop that tin-copper eutectic melts.
Take a broad view of above-mentioned, visible the present invention is breaking through under previous technology, has really reached institute's effect for promoting, and also non-be familiar with this operator easy full of beard and, moreover, not open before the present patent application, and the progressive of its tool, practicality, the aobvious application important document having met patent, therefore patent application is proposed in accordance with the law, earnestly ask your office and check and approve this part application for a patent for invention case, to encourage invention, to feeling moral just.
Although aforesaid description and graphicly disclosed preferred embodiment of the present invention, but must recognize variously to increase, many amendments and replace and may be used in present pre-ferred embodiments, and all can not depart from spirit and the scope of the principle of the invention that claim defines.The general technology person being familiar with the technical field of the invention can know from experience, and the present invention can be used in the amendment of many forms, structure, layout, ratio, material, element and assembly.Therefore, should be regarded as the present invention is described in this embodiment disclosed herein, and be not used to limit the present invention.Scope of the present invention should be defined by claim, and contains its legal equivalents, is not limited to previous description.
Claims (10)
1. one kind large-scale single-layer ceramic passive device is with the substrate of copper electrode, this large-scale single-layer ceramic passive device substrate is shaped to the structure of square or positive disk, by Ceramic Powder Injection Molding, feature is made, it is characterized in that comprising: both sides have the edge of electrode boss, the electrode boss edge of corners, body junction and wafer body, after, atmosphere de-glutinous through compound and Stress control sinter, adopt cryogenic vacuum sputter charity copper electrode again, become the substrate of a kind of large-scale single-layer ceramic passive device with copper electrode.
2. large-scale single-layer ceramic passive device as claimed in claim 1 is with the substrate of copper electrode, it is characterized in that this large-scale single-layer ceramic passive device substrate is shaped to the structure of square or positive disk, this square size dimension is greater than 15mm, or this positive round diameter is greater than 15mm, and integral thickness is greater than more than 1mm.
3. large-scale single-layer ceramic passive device as claimed in claim 1 is with the substrate of copper electrode, it is characterized in that this electrode boss is characterized as within the maximum two area side ﹐ distance edge 0.5 ~ 1mm of single-layer ceramic substrate body, formation is protruding to upside and is more than 0.1mm less but 1/2 thickness being no more than this body, for successive process charity electrode.
4. large-scale single-layer ceramic passive device as claimed in claim 1 is with the substrate of copper electrode, it is characterized in that the electrode boss edge of this corners, body junction, the radius size of its fillet is for being greater than more than 0.05mm, but be no more than 1/2 height of this boss overall height, using the accurate location as two lateral electrode coatings and successive process.
5. large-scale single-layer ceramic passive device as claimed in claim 1 is with the substrate of copper electrode, it is characterized in that the edge of the wafer body of this corners, the radius size of its fillet is for being greater than more than 0.05mm, but be no more than 1/2 thickness of ceramic substrate body, this feature provide successive process therewith the work of ceramic passive device time shock unfilled corner, rapid expansion the buffering concentrated of stress.
6. large-scale single-layer ceramic passive device as claimed in claim 3 is with the substrate of copper electrode, it is characterized in that this electrode boss, the accurate location used with vacuum splashing and plating charity copper electrode is provided, prevent the deviation of electrode work progress, and guarantee that two lateral electrodes with one heart or same projection area, and the striking and short circuit problem that therefore do not cause two electrodes to overflow to cause hypotelorism to produce.
7. large-scale single-layer ceramic passive device as claimed in claim 1 is with the substrate of copper electrode, it is characterized in that this Ceramic Powder Injection Molding, its ceramic material powder must mix be greater than that entirety shoots material 30% and be less than the high molecular polymer adhesive of the volume ratio between 50%, use after carrying out abundant banburying, the Linear Amplifer of rear to green and sintering ceramic base lamellar body is being greater than 1.05 than controlling but is being less than the scope within 1.19 simultaneously.
8. large-scale single-layer ceramic passive device as claimed in claim 1 is with the substrate of copper electrode, it is characterized in that this high molecular polymer of filling a prescription as adhesive, comprise the part of low melting point, using stearic acid/zinc stearate/metallic stearic base etc. as activator, filler is can be used as with paraffin/microwax/brazil wax/beeswax, the summation volume ratio of activator and filler equals 50% of adhesive summation volume: remaining 50% volume of adhesive is then high temperature resistant adhesive, then with high density polyethylene (HDPE) (HDPE)/polyethylene/vinyl acetate copolymerized compound of Yi Xi ﹑ (EVA)/polypropylene (PP), adopt separately or arbitrary proportion mixing all can formula.
9. large-scale single-layer ceramic passive device as claimed in claim 6 is with the substrate of copper electrode, it is characterized in that this electrode boss Te Zheng ﹐ provides with the accurate location of vacuum splashing and plating charity copper electrode use and avoids external lead wire to contact the body of ceramic passive device substrate, and the coating design of vacuum splashing and plating adopts composite deposite, using the buffer layer material that nickel chromium triangle and alloy thereof are connected with conductive layer as the surface of ceramic passive device substrate mutually with conductive layer, conductive layer, its thickness is by 10nm ~ 1500nm scope; Conductive then with the simple metal of the high connductivity of copper/aluminium, with vacuum spatter cross charity thickness then for 300nm ~ 3000nm scope.The the first composite deposite combination be made up of transition zone-conductive layer, can implement by single level continuously to plural layer underrange.
10. large-scale single-layer ceramic passive device as claimed in claim 6 is with the substrate of copper electrode, it is characterized in that this electrode Tu Tai ﹐ provides the accurate location used with vacuum splashing and plating charity copper electrode, except providing with except the accurate location of vacuum splashing and plating charity composite bed electrode use, also can be used as the use of the various conducting metal of screen painting, roll printing and impression or alloy slurry, to form the electrode of correct and unlikely spilling metallic slurry.
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| TW102136669 | 2013-10-11 | ||
| TW102136669A TWI604936B (en) | 2013-10-11 | 2013-10-11 | Large single-layer ceramic passive element with composite electrode layer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107622847A (en) * | 2016-07-13 | 2018-01-23 | 成都铁达电子有限责任公司 | The electrode of piezo-resistance |
| CN111063499A (en) * | 2019-12-31 | 2020-04-24 | 淄博中领电子有限公司 | Preparation method of annular piezoresistor vacuum sputtering copper electrode made of zinc oxide material |
| CN111180204A (en) * | 2019-12-31 | 2020-05-19 | 广东爱晟电子科技有限公司 | Stress buffering metal electrode structure chip capacitor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4593912B2 (en) * | 2003-12-24 | 2010-12-08 | 京セラ株式会社 | Multilayer piezoelectric element, manufacturing method thereof, and injection apparatus |
| CN101105992A (en) * | 2007-07-31 | 2008-01-16 | 广州新莱福磁电有限公司 | Pressure sensitive resistor convenient for production and its production process |
| CN101645486B (en) * | 2008-08-06 | 2011-06-15 | 中陶久源(北京)电子科技有限公司 | Radial vibration piezoelectric transformer and preparation method thereof |
-
2013
- 2013-10-11 TW TW102136669A patent/TWI604936B/en active
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107622847A (en) * | 2016-07-13 | 2018-01-23 | 成都铁达电子有限责任公司 | The electrode of piezo-resistance |
| CN111063499A (en) * | 2019-12-31 | 2020-04-24 | 淄博中领电子有限公司 | Preparation method of annular piezoresistor vacuum sputtering copper electrode made of zinc oxide material |
| CN111180204A (en) * | 2019-12-31 | 2020-05-19 | 广东爱晟电子科技有限公司 | Stress buffering metal electrode structure chip capacitor |
| CN111063499B (en) * | 2019-12-31 | 2020-10-09 | 淄博中领电子有限公司 | Preparation method of annular piezoresistor vacuum sputtering copper electrode made of zinc oxide material |
Also Published As
| Publication number | Publication date |
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| CN104576041B (en) | 2017-04-19 |
| TWI604936B (en) | 2017-11-11 |
| TW201513988A (en) | 2015-04-16 |
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